KR101680473B1 - The method of high-frequency S-parameter measurement for planar components - Google Patents

The method of high-frequency S-parameter measurement for planar components Download PDF

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KR101680473B1
KR101680473B1 KR1020150091016A KR20150091016A KR101680473B1 KR 101680473 B1 KR101680473 B1 KR 101680473B1 KR 1020150091016 A KR1020150091016 A KR 1020150091016A KR 20150091016 A KR20150091016 A KR 20150091016A KR 101680473 B1 KR101680473 B1 KR 101680473B1
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capacitance
wiring
transmission line
characteristic impedance
determined
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Korean (ko)
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어영선
유대규
김혜원
민경준
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(주) 와이팜
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R23/00—Arrangements for measuring frequencies; Arrangements for analysing frequency spectra
    • G01R23/02—Arrangements for measuring frequency, e.g. pulse repetition rate; Arrangements for measuring period of current or voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant

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Abstract

A method for measuring the high frequency scattering coefficient of a flat plate element is provided. A method of measuring a high frequency scattering coefficient of a flat plate device according to an embodiment of the present invention includes determining a propagation coefficient of a transmission line using TRL calibration, measuring a scattering coefficient of a transmission line based on SOLT calibration, extracting a transmission line parameter, Determines the capacitance and conductance of the wiring using the complex permittivity, determines the characteristic impedance of the transmission line by using the propagation constant, capacitance, and conductance, and uses the characteristic impedance of the transmission line to calculate the high frequency scattering coefficient . Thus, the characteristic impedance can be accurately determined based on the high-frequency measurement.

Description

[0001] The present invention relates to a method for measuring high frequency scattering of a flat plate,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring scattering coefficient, and more particularly, to a method for accurately measuring a high frequency scattering coefficient of a flat plate.

For device measurements of the coplanar structure, a device under test (DUT), a contact pad for probing, and an access line connecting the contact pad and the measurement sample are required Do.

These exist in the same plane as the elements of the flat structure, and the general measurement results include the characteristics of the contact pads and the connection wiring in addition to the characteristics of the sample. In particular, the parasitic effect of the pad and the wiring must be removed in order to accurately measure the sample, since the characteristic of the parasitic component prevails in the high frequency region.

To date, various techniques for removing parasitic effects (Y-parameter de-embedding, three-step de-embedding, etc.) have been proposed, but these are inaccurate based on approximate circuit models. And therefore can not be applied to high frequency / fine patterns.

De-embedding is a parasitic component removal technique based on short-open-load-thru (SOLT) calibration, whereas thru-reflect-line calibration can set the measurement reference plane directly to the DUT port, It compensates for the disadvantages of SOLT calibration, which is set in the probe and requires de-embedding after measurement, thus enabling more accurate measurement. TRL calibration is theoretically very accurate, but as a precondition, it is not possible to measure the standardized scattering coefficient of a DUT without accurately extracting the frequency-dependent characteristic impedance of the line standard sample And the lengths may be different).

The characteristic impedance of the line in the high frequency region has frequency dependency characteristics and there are related existing theories such as SOLT based Eo & Eisenstadt method and TRL based Calibration Comparison method. The Eo & Eisenstadt method involves inaccuracies due to resonance as well as the intrinsic problems of SOLT. Calibration comparison method calibrates on two wafers with different characteristics and then applies a simple comparison model to determine the characteristic impedance of the line. (Eg, the series impedance effect can cause measurement errors), and, above all, the process is very complicated. Experimental characterization of characteristic impedance has been recognized as a problem up to now.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide an apparatus and a method for correcting a thin film transmission line by using TRL calibration, transmission line parameter estimation based on SOLT calibration, And a method for precisely measuring the high frequency scattering coefficient of a flat panel device by removing parasitic components generated when the characteristic impedance is determined and the high frequency scattering coefficient is measured.

According to an aspect of the present invention, there is provided a method of measuring a high frequency scattering coefficient of a flat plate, comprising: determining a propagation constant of a transmission line using TRL calibration; Measuring a scattering coefficient of a transmission line based on SOLT calibration and extracting a transmission line parameter; Determining a complex permittivity; Determining a capacitance and a conductance of the wiring using the complex permittivity; Determining a characteristic impedance of the transmission line using a propagation constant, a capacitance, and a conductance; And measuring the high frequency scattering coefficient number based on the TRL calibration using the characteristic impedance of the transmission line.

The connecting wires formed on the flat plate elements have the same structure and can have a plurality of lengths for MTRL calibration.

The complex permittivity determining step may be determined by measuring the number of scattering elements of the open pad and using the following equation.

Figure 112015062020921-pat00001

Figure 112015062020921-pat00002

Figure 112015062020921-pat00003

Here, tanδ eff (ω) is the loss tangent, Y p is the admittance of the pad of the substrate, C p is the pad capacitance, C p _ low is the low-frequency pad capacitance, Kg is a constant related to the physical structure, X eff (ω) is Complex permittivity,

Figure 112015062020921-pat00004

Then, the capacitance and conductance of the wiring can be determined by using the following equation, and the capacitance and conductance of the wiring can be determined.

Figure 112015062020921-pat00005

Figure 112015062020921-pat00006

Where C line (ω) is the capacitance per unit length of the wiring, X eff (ω) is the complex permittivity, C line_low is the low frequency capacitance of the wiring, G line (ω) is the conductance per unit length of the wiring, tan δ eff Lt; RTI ID = 0.0 > tangent &

The transmission line parameter extraction step may include: The low frequency capacitance of the wiring can be determined.

In the characteristic impedance determination step, the characteristic impedance may be determined using the following equation.

Figure 112015062020921-pat00007

Here, Zc (?) Is the characteristic impedance,? Is the propagation coefficient, G line (?) Is the conductance per unit length of the wiring, C line (?) Is the capacitance per unit length of the wiring

Further, elements, pads, and connection wirings may be formed in the above-mentioned flat panel element.

In the step of measuring the high frequency scattering coefficient, the calibration reference impedance can be converted using the characteristic impedance of the transmission line during TRL calibration.

As described above, according to the embodiments of the present invention, the characteristic impedance can be accurately determined based on the high-frequency measurement. Therefore, even in the case of a lossy substrate in a frequency band of 40 GHz or more, accurate TRL calibration can be performed, thereby enabling more precise measurement of various passive / active elements including the wiring itself.

This directly affects the determination of the circuit model and various simulation parameters used in the design, which can result in higher system design accuracy and optimization.

1 is a flow chart of an accurate TRL calibration based DUT measurement according to an embodiment of the present invention.
Figure 2 shows a test pattern structure usable in an embodiment of the present invention.
3 is an example of the propagation constant determined by the method presented in the embodiment of the present invention.
4 is an example of capacitance and dielectric loss determination of a pad used in an embodiment of the present invention.
FIG. 5 is an example of capacitance extraction per unit length determined by the method shown in the embodiment of the present invention. FIG.
6 is an example of conductance extraction per unit length determined by the method shown in the embodiment of the present invention.
7 is an example of resistance extraction per unit length determined by the method shown in the embodiment of the present invention.
8 is an example of inductance extraction per unit length determined by the method shown in the embodiment of the present invention.
9 is an example of characteristic impedance determined by the method presented in the embodiment of the present invention.
Fig. 10 is a result of measurement of the scattering coefficient of the wiring determined by the method shown in the embodiment of the present invention. Fig.

Hereinafter, the present invention will be described in detail with reference to the drawings.

In the embodiment of the present invention, a method of accurately determining the frequency-dependent characteristic impedance in order to overcome the limit of TRL calibration, which is known theoretically and is the most accurate but does not know the method of accurately obtaining the characteristic impedance of the LINE standard sample of the lossy substrate present.

The characteristic of the transmission line is determined by the propagation coefficient (? (?)) And the characteristic impedance (Z c (?)), And can be expressed by a circuit model parameter as shown in the following Equation (1).

[Equation 1]

Figure 112015062020921-pat00008

Figure 112015062020921-pat00009

Here, since the propagation constant can be determined accurately as a byproduct of the TRL calibration algorithm, the characteristic impedance can be obtained indirectly if (R, L) or (G, C) can be determined.

It is easier to obtain (G, C) with relatively low frequency dependency than to (R, L) with strong frequency dependency. (G, C) is related to the complex permittivity, it is possible to accurately determine the characteristic impedance if the frequency dependent complex permittivity can be extracted from the TRL calibration for DUT measurement and the measurement separately.

For this, as shown in the flowchart of FIG. 1, if the characteristic impedance of the wiring is determined, it is possible to accurately measure the high frequency scattering coefficient based on the TRL calibration. FIG. 3 shows the result of extracting the propagation coefficients based on the SOLT-based or TRL-based on the test wiring having the structure shown in FIG. 2 (for the TRL calibration, a plurality of wires having the same structure and having different lengths are required).

Complex permittivity (

Figure 112015062020921-pat00010
), A separate test pattern for the pad used for probing in wafer level measurement is formed and measured on a SOLT calibration basis. Because SOLT sets the measurement plane at the tip of the probe tip, unlike the normal DUT measurement, the pad itself becomes the DUT, so the accuracy of the measurement is guaranteed. The scattering coefficient measurement result of the connection wiring and the open pad not connected to the DUT can be expressed by the following equation (2).

&Quot; (2) "

Figure 112015062020921-pat00011

Where Z p is the impedance of the pad, and Z CRI is the calibration reference impedance (in the case of SOLT, the impedance of the LOAD reference sample). From the pad impedance, the loss tangent of the substrate can be obtained using the following equation (3) (see Fig. 4).

&Quot; (3) "

Figure 112015062020921-pat00012

Where Y p = 1 / Z p . The pad capacitance can be determined from the imaginary part of the pad admittance, and the low-frequency pad capacitance has the relationship as shown in Equation (4) with the permittivity.

&Quot; (4) "

Figure 112015062020921-pat00013

Where Kg is a constant related to the physical structure. The ratio of the low frequency pad capacitance to the frequency dependent pad capacitance means the frequency dependency characteristic of the dielectric constant and can be expressed by the following equation (5) (see FIG. 4).

&Quot; (5) "

Figure 112015062020921-pat00014

When the frequency dependency of the complex dielectric constant is determined, the conductance and the capacitance per unit length of the wiring can be determined as shown in Equations (6) to (7).

&Quot; (6) "

Figure 112015062020921-pat00015

&Quot; (7) "

Figure 112015062020921-pat00016

Since the influence of the pad is relatively small in the low frequency region, the low frequency capacitance (C line_low ) of the wiring can be determined using the Eo & Eisenstadt method, which is a SOLT based transmission line parameter extraction technique.

In the next step, the characteristic impedance can be determined using equation (8) using the propagation coefficient and (G, C) (see FIG. 9).

&Quot; (8) "

Figure 112015062020921-pat00017

Once the characteristic impedance is determined, the resistance and inductance of the wiring can also be determined by the relationship of equation (1), and examples are shown in Figs.

Finally, the transmission line measurement result based on the TRL calibration using the accurate characteristic impedance determined by the method proposed by the present invention is shown in FIG.

Hereinafter, a method of measuring the high frequency scattering coefficient of the flat plate element will be described in more detail with reference to Fig.

In order to measure the high frequency scattering coefficient of the flat plate device, as shown in FIG. 1, first, the propagation coefficient of the transmission line is determined using TRL calibration (1). Next, the scattering coefficient of the transmission line is measured based on the SOLT calibration, and the transmission line parameters are extracted (②, ④, ⑤). Then, the scattering coefficient of the open pad is measured (③) to determine the complex permittivity (⑥).

Next, the capacitance and conductance of the wiring are determined using the complex permittivity, and the characteristic impedance of the transmission line is determined using the propagation constant, capacitance, and conductance (7).

Then, the high frequency scattering coefficient is measured based on the TRL calibration using the characteristic impedance of the transmission line. At this time, the calibration reference impedance is converted using the characteristic impedance of the transmission line when TRL calibration is performed.

So far, the accurate characteristic impedance of the thin film transmission line is determined by using the TRL calibration, the transmission line parameter extraction based on the SOLT calibration, and the accurate complex permittivity extraction technique, and the parasitic component generated in the measurement of the high frequency scattering coefficient is removed, A method of accurately measuring the number of high frequency scattering elements of the device has been described in detail with a preferred embodiment.

In the embodiment of the present invention, in order to eliminate parasitic effects of pads and access lines inevitably existed when measuring the high frequency scattering coefficient in the measurement of the high frequency scattering coefficient of the flat plate element, And the transmission line parameter based on the SOLT calibration is extracted using a transmission line. The frequency dependent dielectric constant is extracted using a pad, and then the characteristic impedance is determined to determine the high frequency of the on- The number of laying hens was measured.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the present invention.

A device under test (DUT)
Short-open-load-thru (SOLT) calibration
Thru-reflect-line calibration
? (?): propagation number
Z c (ω): characteristic impedance

Claims (8)

Determining a propagation constant of the transmission line using TRL calibration;
Measuring a scattering coefficient of a transmission line based on SOLT calibration and extracting a transmission line parameter;
Determining a frequency dependent complex permittivity;
Determining a frequency dependent capacitance and a conductance of the wiring using the determined complex permittivity;
Determining a frequency dependent characteristic impedance of the transmission line using the determined propagation constant, capacitance, and conductance; And
And measuring a high frequency scattering coefficient number based on the TRL calibration using the determined characteristic impedance of the transmission line,
Wherein the characteristic impedance determination step comprises:
The characteristic impedance is determined using the following equation,
Figure 112016085261283-pat00035

Wherein a capacitance of each of the wiring lines is expressed by the following equation: Zc (?) Is the characteristic impedance,? Is the propagation coefficient, G line (?) Is the conductance per unit length of the wiring, Measuring method.
The method according to claim 1,
The connection wiring formed on the flat plate element is connected,
And a plurality of lengths are provided for the same structure and performing MTRL calibration.
The method according to claim 1,
The complex permittivity determination step may include:
Measuring a scattering coefficient of the open pad, and determining the scattering coefficient by using the following equation.
Figure 112015062020921-pat00018

Figure 112015062020921-pat00019

Figure 112015062020921-pat00020

Here, tanδ eff (ω) is the loss tangent, Y p is the admittance of the pad of the substrate, C p is the pad capacitance, C p _ low is the low-frequency pad capacitance, Kg is a constant related to the physical structure, X eff (ω) is Complex permittivity,
Figure 112015062020921-pat00021

 The method according to claim 1,
The step of determining the capacitance and conductance of the wiring,
Wherein a capacitance and a conductance of the wiring are determined by using the following equation.
Figure 112015062020921-pat00022

Figure 112015062020921-pat00023

Where C line (ω) is the capacitance per unit length of the wiring, X eff (ω) is the complex permittivity, C line_low is the low frequency capacitance of the wiring, G line (ω) is the conductance per unit length of the wiring, tan δ eff Lt; RTI ID = 0.0 > tangent &
The method of claim 4,
The transmission line parameter extracting step includes:
And the low frequency capacitance of the wiring is determined.
delete The method according to claim 1,
In the flat plate element,
Wherein a device, a pad, and a connection wiring are formed on the substrate.
The method according to claim 1,
The high frequency scattering coefficient measurement step may include:
Wherein the calibration reference impedance is converted using the characteristic impedance of the transmission line when the TRL calibration is performed.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108445291A (en) * 2018-03-14 2018-08-24 哈尔滨工业大学 A kind of cable quality of production control method based on back scattering inversion technique
CN112649713A (en) * 2020-11-30 2021-04-13 中国电子科技集团公司第五十五研究所 Terahertz frequency band on-chip TRL calibration piece and preparation method thereof

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KR100764660B1 (en) 2006-11-01 2007-10-08 삼성전기주식회사 Signal transient simulation of multi-coupled frequency-variant transmission lines
JP4650487B2 (en) * 2005-02-22 2011-03-16 株式会社村田製作所 Method for measuring dielectric constant of transmission line material and method for measuring electrical characteristics of electronic component using this dielectric constant measuring method
KR101393423B1 (en) 2013-04-09 2014-05-12 (주) 와이팜 Frequency-variant transmission line parameter determination method using frequency-variant complex permittivity

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JP4650487B2 (en) * 2005-02-22 2011-03-16 株式会社村田製作所 Method for measuring dielectric constant of transmission line material and method for measuring electrical characteristics of electronic component using this dielectric constant measuring method
KR100764660B1 (en) 2006-11-01 2007-10-08 삼성전기주식회사 Signal transient simulation of multi-coupled frequency-variant transmission lines
KR101393423B1 (en) 2013-04-09 2014-05-12 (주) 와이팜 Frequency-variant transmission line parameter determination method using frequency-variant complex permittivity

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밀리미터파 평판 전송로의 특성 평가 기술, 어영선, 한국전자파학회, 전자파기술 24(3), (2013.5) 31-41 (11 pages)*

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108445291A (en) * 2018-03-14 2018-08-24 哈尔滨工业大学 A kind of cable quality of production control method based on back scattering inversion technique
CN112649713A (en) * 2020-11-30 2021-04-13 中国电子科技集团公司第五十五研究所 Terahertz frequency band on-chip TRL calibration piece and preparation method thereof
CN112649713B (en) * 2020-11-30 2024-04-12 中国电子科技集团公司第五十五研究所 Terahertz frequency band on-chip TRL calibration piece and preparation method thereof

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