TWI805069B - High-frequency component test device and method thereof - Google Patents

Abstract

A high-frequency component test device includes a test key and a test module. The test key include a front-level key and a back-level key arranged symmetrically, and the front-level key and the back-level key have the same electrical length and characteristic impedance. The test module is used to measure S parameter of the front-level key and the back-level key connected directly and S parameter of a structure where a device under test (DUT) is added between the front-level key and the back-level key. The test module calculates in the frequency domain and converts the S parameter into an ABCD parameter matrix, and then uses a matrix root-opening operation and an inverse matrix operation to obtain ABCD parameter of a de-embedded DUT.

Description

High-frequency component testing device and testing method thereof

The present invention relates to a testing device, and in particular to a high-frequency component testing device and a testing method thereof.

Traditional high-frequency component measurement and calibration methods are mostly based on SOLT and TRL. SOLT requires four calibration kits (Short), Open, Load, and Thru, while TRL Three test keys are required: Thru, Reflect, and Line. In addition, in the above calibration techniques, different calibration methods are usually divided into different calibration methods for specific measurement requirements (such as broadband frequency or on-wafer detection), resulting in cumbersome calibration steps.

In addition, SOLT and TRL-based calibration methods are prone to errors due to each measurement, such as different needle depths or position offsets, which will affect the calibration results. It is necessary to propose a way to improve the measurement inaccuracy of the measured object.

The invention relates to a high-frequency component testing device and a testing method thereof, which are used to reduce correction errors.

According to one aspect of the present invention, a high-frequency component testing device is provided, including a test key and a test module. The test keys include a front-stage key and a rear-stage key arranged symmetrically, which have the same electrical length and characteristic impedance. The test module is used to measure the S parameters of the direct connection between the previous key and the subsequent key and the S parameter of the structure with an object to be tested between the previous key and the subsequent key.

According to one aspect of the present invention, a high-frequency component testing method is provided, including the following steps. The test key is provided, and the test key includes a front-stage key and a rear-stage key arranged symmetrically, which have consistent electrical length and characteristic impedance. Measuring the S-parameters of the direct connection between the preceding key and the subsequent key and the S-parameters of the structure in which an analyte is added between the preceding key and the subsequent key. Calculate in the frequency domain and convert the S parameter into an ABCD parameter matrix, and then obtain the ABCD parameter matrix of the previous key and the subsequent key through root operation. A de-embedded ABCD parameter of the analyte is calculated according to the inverse matrix of the ABCD parameter matrix of the previous key and the subsequent key.

In order to have a better understanding of the above-mentioned and other aspects of the present invention, the following specific examples are given in detail with the accompanying drawings as follows:

100: High-frequency component testing device

101: De-embedding planes

102: The object to be tested

105: Test key

110: front key

120: Back stage key

112: The first transmission line

122: Second transmission line

130: Test module

Figures 1 and 2 are schematic diagrams of a high-frequency component testing device according to an embodiment of the present invention; Figure 3 is a flow chart of a high-frequency component testing method according to an embodiment of the present invention; and Figures 4A to 4D Respectively show a high-frequency component testing device according to an embodiment of the present invention Schematic diagram of the feature verification.

The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of them. Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of the embodiments of the application. However, those skilled in the art will appreciate that the technical solutions of the present application can be practiced without one or more of the specific details, or other methods, devices, steps, etc. can be used. In other instances, well-known methods, apparatus, implementations, or operations have not been shown or described in detail to avoid obscuring aspects of the application.

In this embodiment, the scattering parameters (S parameters) are used to represent the high frequency performance of components such as radio frequency transmitters and microwaves. The current S-parameter test device will produce a large parasitic effect, so that the S-parameters directly obtained by testing the high-frequency component cannot accurately represent the performance of the high-frequency component. Therefore, the testing device in this embodiment sets the test key to define the de-embedding plane 101 of the high-frequency component, that is, defines the plane between the intrinsic component (the object under test 102) and the parasitic component (testing device 100), as shown in the first As shown in Figure 2, accurate intrinsic transmission parameters can be obtained by removing the parasitic effects brought about by the test device under high-frequency operating conditions.

Please refer to FIG. 1 and FIG. 2 , which respectively illustrate a schematic view of a high-frequency component testing device 100 according to an embodiment of the present invention. In Figure 1, the high-frequency component test device The device 100 includes a test key 105 and a test module 130. The test key 105 includes a symmetrical front key 110 and a rear key 120. The front key 110 and the rear key 120 have the same electrical length and characteristic impedance. In one embodiment, the characteristic impedance of the front key 110 and the back key 120 is, for example, 50 ohms, but it is not limited thereto. The front-stage key 110 and the subsequent-stage key 120 are configured in a ground-signal-ground (GSG) configuration, for example. In another embodiment, the front-stage key 110 and the subsequent-stage key 120 are set in a ground-signal line (GS), ground-signal line-ground-signal line-ground (GSGSG) or other suitable test configurations. The test module 130 is, for example, a network analyzer.

The previous stage key 110 includes a first transmission line 112 , and the subsequent stage key 120 includes a second transmission line 122 . The first transmission line 112 and the second transmission line 122 have the same electrical length and material, so that the transmission parameters of the front and rear sides are substantially equal. In FIG. 2 , the DUT 102 is connected between two transmission lines 112 , 122 . A de-embedding plane 101 (perpendicular to the paper surface) is formed between the object under test 102 and the first transmission line 112 and the second transmission line 122, so that the object under test 102 is connected between the two de-embedding planes 101, and the de-embedding plane 101 Both the left structure and the right structure have an intrinsic transmission parameter, and the intrinsic transmission parameter of the object under test 102 is derived through the intrinsic transmission parameter and the transmission parameter of the structure under test. In an embodiment, the intrinsic transmission parameters are represented by ABCD parameters, for example.

表示。例如在前級鍵110與後 級鍵120直通連接時，在二端口網路的一端輸入總電壓V1及總電流I1，在二端口網路的另一端輸出總電壓V2及總電流I2，其中V1=AV2+BI2，I1=CV2+DI2，以公式

表示，其中A、B、C和D用以表示輸入電壓V1、輸出電壓V2、輸入電流I1和輸出電流I2的關係。 In this embodiment, the S parameters are converted into ABCD parameters through the parameter conversion module. When the front key 110 and the back key 120 are directly connected, the S parameters can be represented by ABCD parameters, and the parameter matrix

express. For example, when the front key 110 is directly connected with the back key 120, the total voltage V1 and the total current I1 are input at one end of the two-port network, and the total voltage V2 and the total current I2 are output at the other end of the two-port network, where V1 =AV2+BI2, I1=CV2+DI2, with the formula

Indicates that A, B, C and D are used to represent the relationship between input voltage V1, output voltage V2, input current I1 and output current I2.

The test module 130 of this embodiment can obtain the ABCD parameters of the previous key 110 and the subsequent key 120 according to the root operation of the ABCD parameter matrix. The calculation formula (1) is as follows: [Dem]=[PAD][PAD], Where [PAD] is the ABCD parameter matrix of the front key 110 and the back key 120, and [Dem] is the ABCD parameter matrix when the front key 110 and the back key 120 are directly connected. Since the front-stage key 110 and the subsequent-stage key 120 of the present embodiment have the same electrical length and characteristic impedance, the ABCD parameter matrix of the previous-stage key 110 and the subsequent-stage key 120 is the same, so as long as the two test keys 110, 120 are directly connected The ABCD parameter matrix [Dem] of the ABCD parameter matrix [Dem] can be obtained by the root operation, and the ABCD parameter matrix [PAD] of the previous key 110 and the subsequent key 120 can be obtained. It can be known from the formula (1): [ PAD ]=

In addition, please refer to FIG. 2, when adding an object under test 102 between the front key 110 and the back key 120, the test module 130 measures the addition of the object under test 102 between the front key 110 and the back key. 120 between the S parameters of the tested structure, and then convert the S parameters into ABCD parameters, and obtain a de-embedded ABCD parameter of the test object 102 according to the inverse matrix. The calculation formula (2) is as follows: [DUT]=[PAD][Golden][PAD], where [Golden] is the ABCD parameter matrix of the de-embedded object under test 102, and [DUT] is the front-level key 110 and the rear key The ABCD parameter matrix when the level key 120 is directly connected to the object under test 102 . It can be known from the formula (2) that [Golden]=[PAD] ^-1 [DUT][PAD] ^-1 , wherein [PAD] ^-1 is the inverse matrix of the ABCD parameter matrix of the previous key 110 and the subsequent key 120, That is, [ PAD ] ^-1 =

In this embodiment, the high-frequency component testing device 100 only needs a set of test keys for de-embedding, which can remove the additional layout and wiring parasitic effects due to measurement, speed up the detection speed of de-embedding, and Reduce stitch error to improve accuracy.

Please refer to FIGS. 1 to 3 , wherein FIG. 3 shows a flow chart of a method for testing high-frequency components according to an embodiment of the present invention. First, in step S30 , a test key 105 is provided, which includes a symmetrically arranged front key 110 and a rear key 120 , and the front key 110 and the rear key 120 have the same electrical length and characteristic impedance. In step S32 , the S parameters of the direct connection between the front key 110 and the back key 120 and the S parameters of the structure in which a test object 102 is added between the front key 110 and the back key 120 are measured. In step S34, the S parameters are calculated and converted into an ABCD parameter matrix in the frequency domain, and then the ABCD parameter matrix of the previous key 110 and the subsequent key 120 is obtained by root-opening operation. In step S36 , a de-embedded ABCD parameter of the object under test 102 is calculated according to the inverse matrix of the ABCD parameter matrix of the previous key 110 and the subsequent key 120 .

Please refer to FIGS. 4A to 4D , which are respectively schematic diagrams illustrating the S-parameter characteristic verification of the high-frequency component testing device 100 according to an embodiment of the present invention. In Figure 4A, the S(1,1) parameter is the input reflection coefficient, that is, the input return loss. In Figure 4B, the S(1,2) parameter is the reverse transmission coefficient, that is, isolation. at 4C In the figure, the S(2,1) parameter is the forward transmission coefficient, that is, the gain. In Figure 4D, the S(2,2) parameter is the output reflection coefficient, that is, the output return loss. In this embodiment, the feasibility and characteristics of S parameters are verified by means of simulation verification. After comparing the data of the simulated model curve, DUT model curve and de-embedded curve in the figure, it can be found that using the de-embedding curve of this embodiment The embedding program can obtain a result very close to the intrinsic transmission parameter of the object under test 102 . Simulation verification to 100GHz small signal curve fitting (curve fitting) error is less than 10%. In another embodiment, if the transmission key test key is used to verify that the error of the characteristic impedance Z0 and the transmission line length βL to the 67 GHz small signal phase can be less than 8%.

The high-frequency component testing device and testing method thereof in the above-mentioned embodiments of the present invention only need a test key as a calibration module, and the test key has a front-stage key and a back-stage key with consistent electrical length and characteristic impedance, and the characteristic impedance is, for example, It is 50 ohms consistent with the impedance of the probe to avoid measurement inaccuracy of the object to be measured due to calibration errors. Compared with the traditional high-frequency component measurement and calibration methods based on SOLT and TRL, this embodiment can reduce the calibration steps and remove the parasitic effects of S-parameter testing under high-frequency working conditions, thereby obtaining accurate S-parameters .

To sum up, although the present invention has been disclosed by the above embodiments, it is not intended to limit the present invention. Those skilled in the art of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the appended patent application.

100: High-frequency component testing device

105: Test key

110: front key

120: Back stage key

112: The first transmission line

122: Second transmission line

130: Test module

G: ground

S: signal line

Claims (10)

A high-frequency component testing device, comprising: a test key, including a front key and a back key symmetrically arranged, the front key and the back key have the same electrical length and characteristic impedance; and a test module, It is used to measure the S parameters of the direct connection between the previous key and the subsequent key and the S parameter of the structure of adding a test object between the previous key and the subsequent key. The test module is calculated in the frequency domain The S parameter is converted into an ABCD parameter matrix, and then a de-embedded ABCD parameter of the object to be measured is obtained by matrix root operation and inverse matrix operation. The test device as claimed in claim 1, wherein the preceding key comprises a first transmission line, the subsequent key comprises a second transmission line, and the first transmission line and the second transmission line have the same characteristic impedance. The test device as described in claim 2, wherein the object under test is connected between the first transmission line and the second transmission line, and a de-embedding is formed between the object under test and the first transmission line and the second transmission line respectively flat. The test device as described in claim item 3, wherein [PAD] is the ABCD parameter matrix of the preceding key and the subsequent key, and [Dem] is the ABCD parameter matrix when the preceding key is directly connected to the subsequent key, [Dem]=[PAD][PAD], the ABCD parameter matrix of the previous key and the subsequent key

. The test device as described in claim 4, wherein [Golden] is the ABCD parameter matrix of the de-embedded object under test, and [DUT] is the ABCD parameter matrix when the two test keys are directly connected to the object under test, [DUT]=[PAD][Golden][PAD], calculate the de-embedded ABCD parameter matrix of the DUT according to the inverse matrix [PAD] ^-1 of the ABCD parameter matrix of the previous key and the subsequent key [ Golden]=[PAD] ^-1 [DUT][PAD] ^-1 . A method for testing high-frequency components, comprising: providing a test key, the test key including a front-stage key and a rear-stage key symmetrically arranged, the front-stage key and the rear-stage key having the same electrical length and characteristic impedance; measuring Measure the S parameter of the direct connection between the previous key and the subsequent key and add the S parameter of the structure between the preceding key and the subsequent key; calculate in the frequency domain and convert the S parameter into ABCD parameter matrix, obtain the ABCD parameter matrix of this front-level key and this back-level key with root operation again; The ABCD parameters of the substance. The testing method according to claim 6, wherein the previous key includes a first transmission line, the subsequent key includes a second transmission line, and the first transmission line and the second transmission line have the same characteristic impedance. The test method as described in claim 7, wherein the object under test is connected between the first transmission line and the second transmission line, and a de-embedding is formed between the object under test and the first transmission line and the second transmission line respectively flat. The test method as described in claim item 6, wherein [PAD] is the ABCD parameter matrix of the previous key and the subsequent key, and [Dem] is the ABCD parameter matrix when the previous key is directly connected to the subsequent key, [Dem]=[PAD][PAD], the ABCD parameter matrix of the previous key and the subsequent key

. The test method as described in claim item 9, wherein [Golden] is the ABCD parameter matrix of the de-embedded object under test, and [DUT] is when the front key and the subsequent key are directly connected to the object under test The ABCD parameter matrix of [DUT]=[PAD][Golden][PAD], according to the inverse matrix [PAD] ^-1 of the ABCD parameter matrix of the previous key and the subsequent key to calculate the de-embedded test object The ABCD parameter matrix of [Golden]=[PAD] ^-1 [DUT][PAD] ^-1 .

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