KR20060064179A - Method for inspecting patterns of semiconductor devices - Google Patents

Method for inspecting patterns of semiconductor devices Download PDF

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Publication number
KR20060064179A
KR20060064179A KR1020040102884A KR20040102884A KR20060064179A KR 20060064179 A KR20060064179 A KR 20060064179A KR 1020040102884 A KR1020040102884 A KR 1020040102884A KR 20040102884 A KR20040102884 A KR 20040102884A KR 20060064179 A KR20060064179 A KR 20060064179A
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South Korea
Prior art keywords
pattern
line
inspecting
electron microscope
scanning electron
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KR1020040102884A
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Korean (ko)
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이원욱
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주식회사 하이닉스반도체
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Priority to KR1020040102884A priority Critical patent/KR20060064179A/en
Publication of KR20060064179A publication Critical patent/KR20060064179A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Abstract

본 발명은 반도체소자의 패턴 검사방법에 관한 것으로, 인-라인으로 패턴을 검사할 수 있도록 하기 위하여, The present invention relates to a pattern inspection method of a semiconductor device, in order to be able to inspect the pattern in-line,

정상패턴과 T-Top 패턴의 감광막을 형성하고 인-라인이 주사 전자현미경으로 검사하여 2차전자 시그널을 얻고 저장한 다음, 검사할 패턴을 인-라인 주사 전자현미경으로 검사하여 상기 저장된 2차전자 시그널과 비교함으로써 패턴의 정상 유무를 용이하게 검사하되, 비파괴 검사이므로 공정 웨이퍼의 손실이 없고 인-라인 상태에서 실시하여 검사시간을 단축할 수 있도록 함으로써 반도체소자의 생산성을 향상시킬 수 있도록 하는 기술이다. A photoresist film having a normal pattern and a T-Top pattern was formed, and the in-line was scanned with a scanning electron microscope to obtain and store a secondary electron signal. The pattern to be examined was examined with an in-line scanning electron microscope to store the stored secondary electrons. It is a technology that improves the productivity of semiconductor devices by inspecting the normality of the pattern easily by comparing with the signal, but by non-destructive inspection, so that the process time can be shortened by performing in-line without loss of process wafer. .

Description

반도체소자의 패턴 검사방법{Method for inspecting patterns of semiconductor devices}Method for inspecting patterns of semiconductor devices

도 1 은 정상적으로 형성된 패턴을 도시한 단면도.1 is a cross-sectional view showing a pattern formed normally.

도 2 는 비정상적으로 형성된 패턴을 도시한 단면도.2 is a cross-sectional view showing an abnormally formed pattern.

도 3 은 상기 도 1 및 도 2를 이용하여 패턴의 이상 유무를 판단하는 흐름도.3 is a flow chart for determining the presence or absence of the abnormality of the pattern using the above FIG.

본 발명은 반도체소자의 패턴 검사방법에 관한 것으로, 특히 감광막 노광후 지연 ( post exposure delay ) 시간이 있는 경우 노광에 의해 발생된 산이 대기중의 아민 ( amine contamination ) 과 반응하여 소멸됨으로써 현상할 때 노광 부위의 표면이 녹지 않아 미세 패턴을 얻을 수 없거나 혹은 T-top이 발생되는 패턴과 정상적으로 형성된 패턴을 검사하여 검출할 수 있도록 하는 방법에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for inspecting a pattern of a semiconductor device. In particular, when there is a post exposure delay time, exposure occurs when an acid generated by exposure is developed by reacting with an amine contamination in the atmosphere and developing. The surface of the site is not melted to obtain a fine pattern or T-top pattern and a method that can be detected by detecting the pattern formed normally.

화학증폭형 감광막의 경우 노광후 대기중의 아민에 의해 오염되는 경우 노광지역의 감광막 상부가 현상액으로 녹지 않아 패턴 상부가 커지는 T-Top 프로파일을 형성하게 된다. In the case of the chemically amplified photoresist film, if the contamination is caused by the amine in the post-exposure atmosphere, the upper part of the photoresist film in the exposure area does not melt with the developer, thereby forming a T-Top profile in which the upper part of the pattern becomes larger.                         

상기 T-Top 프로파일이 형성된 경우 정확한 선폭을 측정할 수 없으며 후속 식각공정에서 T-Top 프로파일을 검사하기 위하여 단면 분석이 요구되어 지나 단면분석은 파괴검사법으로 공정 웨이퍼가 손실되며, 단면시편 제작으로 인하여 반도체 제조 라인 내에서 분석할 수 없기 때문에 감광막 프로파일을 관찰하기까지 많은 시간이 걸리는 문제점이 있다. When the T-Top profile is formed, it is impossible to measure the exact line width and cross-sectional analysis is required in order to examine the T-Top profile in the subsequent etching process. Since it cannot be analyzed in a semiconductor manufacturing line, there is a problem that it takes a long time to observe the photoresist profile.

본 발명은 상기한 종래기술에 따른 문제점을 해결하기 위하여, The present invention to solve the above problems according to the prior art,

단면분석없이 인-라인 ( in-line ) 주사전자현미경을 이용하여 패턴의 이상 유무를 용이하게 검사할 수 있도록 하는 반도체소자의 패턴 검사방법을 제공하는데 그 목적이 있다.An object of the present invention is to provide a method for inspecting a pattern of a semiconductor device, which can easily inspect a pattern for abnormality using an in-line scanning electron microscope without cross section analysis.

이상의 목적을 달성하기 위해 본 발명에 따른 반도체소자의 패턴 검사방법은, In order to achieve the above object, the pattern inspection method of a semiconductor device according to the present invention,

정상패턴과 T-Top 패턴의 감광막을 형성하고 인-라인이 주사 전자현미경으로 검사하여 2차전자 시그널을 얻고 저장하는 단계와,Forming a photoresist film having a normal pattern and a T-Top pattern and inspecting the in-line with a scanning electron microscope to obtain and store a secondary electron signal;

검사할 패턴을 인-라인 주사 전자현미경으로 검사하여 상기 저장된 2차전자 시그널과 비교함으로써 검사하는 것과,Inspecting the pattern to be examined by comparing it with the stored secondary electron signal by in-line scanning electron microscope,

상기 감광막은 화학증폭형인 것을 특징으로 한다. The photosensitive film is characterized in that the chemically amplified type.

이하, 첨부된 도면을 참고로 하여 본 발명을 상세히 설명하기로 한다. Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

도 1 및 도 2 는 반도체소자의 형성공정시 형성되는 정상 패턴과 T-Top 패턴 을 도시한 단면도와 2차전자 시그널을 도시한 것이다. 1 and 2 illustrate a cross-sectional view and a secondary electron signal showing a normal pattern and a T-Top pattern formed during a semiconductor device forming process.

도 1을 참조하면, 반도체기판(100) 상에 감광막패턴(110)으로 시편을 형성한다. 이때, 상기 시편은 예정된 형태로 균일한 프로파일을 갖는다. Referring to FIG. 1, a specimen is formed on the semiconductor substrate 100 using the photoresist pattern 110. In this case, the specimen has a uniform profile in a predetermined shape.

도 2를 참조하면, 반도체기판(200) 상에 감광막패턴(210)으로 시편을 형성하되, T-Top 형태로 형성된다. Referring to FIG. 2, a specimen is formed on the semiconductor substrate 200 using a photoresist pattern 210, and is formed in a T-Top shape.

상기 감광막패턴(210)은 화학증폭형 감광막의 경우 노광후 대기중의 아민에 의해 오염되는 경우 노광지역의 감광막 상부가 현상액으로 녹지 않아 패턴 상부가 커지는 T-Top 프로파일을 형성하게 된다. In the case of the chemically amplified photoresist, the photoresist pattern 210 forms a T-Top profile in which the upper portion of the photoresist layer in the exposure area is not melted with a developer when contaminated by an amine in the atmosphere after exposure.

상기 도 1 및 도 2를 비교할 때 정상패턴인 경우의 시편(110)은 전자빔(120)의 조사시 2차전자 시그널이 라운딩되게 형성되고 T-Top 패턴인 경우의 시편(210)은 전자빔(22)의 조사시 2차전자 시그널이 뾰족하게 형성된다.1 and 2, the specimen 110 in the normal pattern is formed so that the secondary electron signal is rounded when the electron beam 120 is irradiated, and the specimen 210 in the T-Top pattern is the electron beam 22. ), The secondary electron signal is sharply formed.

도 3 은 상기 도 1 및 도 2 의 패턴을 이용하여 패턴의 이상 유무를 검출하는 흐름도를 도시한 것이다. 3 is a flowchart illustrating detecting an abnormality of a pattern using the patterns of FIGS. 1 and 2.

도 3을 참조하면, 정상패턴과 T-Top 패턴을 준비하는 단계(10), 인-라인 주사전자현미경에서 각각의 2차전자 시그널을 얻고 이를 저장하는 단계(20), 검사할 패턴을 인-라인 주사전자현미경에서 검사하는 단계(30), 정상패턴의 2차전자 시그널인가 T-Top 패턴의 2차전자 시그널인가 판단하는 단계(40), 상기 저장된 T-Top 패턴의 2차전자 시그널과 일치하여 패턴이상이 발견되는 단계(50), 상기 저장된 정산패턴과 2차전자 시그널이 일치하여 패턴이 정상임을 발견하는 단계(60)로 이루어진다. Referring to FIG. 3, a step 10 of preparing a normal pattern and a T-Top pattern, a step 20 of obtaining and storing respective secondary electron signals from an in-line scanning electron microscope, and a pattern to be inspected in- In the step 30 of inspecting in a line scanning electron microscope, determining whether the secondary electron signal of the normal pattern or the secondary electron signal of the T-Top pattern is determined (40), and coincides with the secondary electron signal of the stored T-Top pattern. In step 50, the pattern abnormality is found, and the stored settlement pattern and the secondary electron signal coincide with each other.

이상에서 설명한 바와 같이 본 발명에 따른 반도체소자의 패턴 검사방법은, 파괴검사인 단면분석을 통하지 않고 인-라인 주사전자 현미경에서 2차전자 시그널로 화학증폭형 감광막의 T-Top 여부를 검사할 수 있는 비파괴검사방법을 사용하므로 공정 웨이퍼의 손실을 방지할 수 있고 반도체소자의 제조 시간을 감소시킬 수 있는 효과를 제공한다. As described above, the pattern inspection method of the semiconductor device according to the present invention can inspect whether the T-Top of the chemically amplified photosensitive film is a secondary electron signal in an in-line scanning electron microscope without performing cross-sectional analysis as a fracture test. The use of non-destructive testing methods can prevent the loss of process wafers and reduce the manufacturing time of semiconductor devices.

아울러 본 발명의 바람직한 실시예는 예시의 목적을 위한 것으로, 당업자라면 첨부된 특허청구범위의 기술적 사상과 범위를 통해 다양한 수정, 변경, 대체 및 부가가 가능할 것이며, 이러한 수정 변경 등은 이하의 특허청구범위에 속하는 것으로 보아야 할 것이다.In addition, a preferred embodiment of the present invention is for the purpose of illustration, those skilled in the art will be able to various modifications, changes, substitutions and additions through the spirit and scope of the appended claims, such modifications and changes are the following claims It should be seen as belonging to a range.

Claims (2)

정상패턴과 T-Top 패턴의 감광막을 형성하고 인-라인이 주사 전자현미경으로 검사하여 2차전자 시그널을 얻고 저장하는 단계와,Forming a photoresist film having a normal pattern and a T-Top pattern and inspecting the in-line with a scanning electron microscope to obtain and store a secondary electron signal; 검사할 패턴을 인-라인 주사 전자현미경으로 검사하여 상기 저장된 2차전자 시그널과 비교함으로써 검사하는 것을 특징으로 하는 반도체소자의 패턴 검사방법.And inspecting the pattern to be inspected by in-line scanning electron microscope and comparing the pattern with the stored secondary electron signal. 제 1 항에 있어서, The method of claim 1, 상기 감광막은 화학증폭형인 것을 특징으로 하는 반도체소자의 패턴 검사방법.And the photosensitive film is chemically amplified.
KR1020040102884A 2004-12-08 2004-12-08 Method for inspecting patterns of semiconductor devices KR20060064179A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102044463A (en) * 2010-10-12 2011-05-04 上海宏力半导体制造有限公司 Photoresist coating monitoring method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102044463A (en) * 2010-10-12 2011-05-04 上海宏力半导体制造有限公司 Photoresist coating monitoring method

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