CN105097593B - A kind of production control method of thin film electronic device, apparatus and system - Google Patents
A kind of production control method of thin film electronic device, apparatus and system Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 238000000195 production control method Methods 0.000 title claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 46
- 238000004364 calculation method Methods 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims description 47
- 238000012937 correction Methods 0.000 claims description 32
- 238000001514 detection method Methods 0.000 claims description 15
- 238000006073 displacement reaction Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 abstract description 15
- 238000010586 diagram Methods 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000004590 computer program Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention discloses a kind of production control method of thin film electronic device, apparatus and system, wherein, shown method includes：Using the first etching of the first mask completion and after obtaining the first circuitous pattern, the actual performance parameter of first circuitous pattern is detected；Calculate the difference of the actual performance parameter and the target capabilities parameter of the thin film electronic device；According to result of calculation, the amendment scheme and the second mask of first circuitous pattern are determined；According to the amendment scheme, the second etching is completed using the second mask, obtains revised second circuit figure.
Description
Technical Field
The invention relates to the field of semiconductor production, in particular to a production control method, a device and a system of a thin film electronic device.
Background
The high-precision thin-film electronic device needs to rely on the thickness of the thin film to ensure the precision of the working characteristics of the device during manufacturing. However, common coating equipment can only guarantee a thickness precision of about-5% to + 5% at most, and if the working characteristic precision of a device is higher than the coating thickness control precision, the production yield of the device is too low or the device cannot be produced.
Therefore, after the current thin film electronic device is usually produced, metal or polysilicon is fused by laser to achieve the purpose of correcting the circuit pattern, and then the target working characteristics of the thin film electronic device are obtained. However, the laser apparatus is not a conventional apparatus for manufacturing a thin film electronic device and needs to be additionally purchased, resulting in an increase in production cost. Meanwhile, laser fusing usually only aims at one point part at one time, the modification range is small, the purpose of modifying a circuit pattern with a large area cannot be achieved, and the efficiency of modifying the circuit pattern is not high. In addition, the precision of laser fusing is insufficient, and the high-precision fine adjustment process cannot be controlled.
Disclosure of Invention
In order to solve the existing technical problems, embodiments of the present invention are expected to provide a method, an apparatus, and a system for controlling the production of a thin film electronic device, which can implement accurate correction of a pattern without adding additional generating equipment.
The technical scheme of the embodiment of the invention is realized as follows:
the embodiment of the invention provides a production control method of a thin film electronic device, which comprises the following steps:
after completing first etching by using a first mask and obtaining a first circuit pattern, detecting actual performance parameters of the first circuit pattern;
calculating a difference between the actual performance parameter and a target performance parameter of the thin film electronic device;
determining a correction scheme of the first circuit pattern and a second mask plate according to a calculation result;
and according to the correction scheme, finishing second etching by using a second mask to obtain a corrected second circuit pattern.
In the above solution, the determining the correction scheme of the first circuit pattern and the second mask according to the calculation result includes:
determining the area of the graph needing to be corrected according to the calculation result;
referring to a first mask plate, determining a corrected graph and a specific position and size thereof according to the area of the graph needing to be corrected;
and selecting a second mask plate according to the corrected graph and the specific position and size of the corrected graph, and determining the relative position relation between the second mask plate and the first circuit graph.
In the above scheme, the selecting the second mask according to the corrected pattern and the specific position and size thereof, and determining the relative position relationship between the second mask and the first circuit pattern includes:
selecting a second mask plate according to the shape of the corrected graph;
and determining the relative position relation between the second mask and the first pattern according to the specific position and size of the corrected pattern, and calculating the offset size required by the second mask.
In the above scheme, the obtaining a corrected second circuit pattern by completing second etching with a second mask according to the correction scheme includes:
making the original point of the second mask plate and the original point of the first circuit graph perform relative displacement, wherein the displacement dimension is the offset dimension;
and carrying out second etching on the first circuit pattern to obtain a corrected second circuit pattern.
In the above scheme, the method further comprises:
and when the corrected second circuit pattern still has a part needing to be corrected, correcting the second circuit pattern as the first circuit pattern.
An embodiment of the present invention further provides a production control apparatus for a thin film electronic device, including: the system comprises a detection module, a calculation module, a scheme determination module and a correction module; wherein,
the detection module is used for detecting the actual performance parameters of the first circuit graph after the first mask is used for completing the first etching and obtaining the first circuit graph;
a calculation module for calculating a difference between the actual performance parameter and a target performance parameter of the thin film electronic device;
the scheme determining module is used for determining a correction scheme of the first circuit pattern and a second mask according to a calculation result;
and the correction module is used for finishing second etching by using a second mask plate according to the correction scheme to obtain a corrected second circuit graph.
In the above solution, the calculating module includes:
the area calculation unit is used for determining the area of the graph needing to be corrected according to the calculation result;
the pattern determining unit is used for determining a corrected pattern and the specific position and size of the corrected pattern according to the area of the pattern to be corrected by referring to the first mask;
and the mask plate determining unit is used for selecting a second mask plate according to the corrected graph and the specific position and size of the corrected graph and determining the relative position relation between the second mask plate and the first circuit graph.
In the above solution, the reticle determining unit includes:
the mask selecting subunit is used for selecting a second mask according to the shape of the corrected graph;
and the position determining subunit is used for determining the relative position relation between the second mask and the first pattern according to the specific position and size of the corrected pattern, and calculating the offset size required by the second mask.
In the foregoing solution, the correction module includes:
the displacement unit is used for making the original point of the second mask plate and the original point of the first circuit graph perform relative displacement, and the displacement size is the offset size;
and the etching unit is used for carrying out second etching on the first circuit pattern to obtain a corrected second circuit pattern.
The embodiment of the invention also provides a production control system of the thin film electronic device, which comprises detection equipment, etching equipment and any one of the production control devices.
According to the production control method, device and system of the thin film electronic device, common etching equipment in the production flow of the thin film electronic device is used for replacing laser equipment, after the first circuit pattern of the thin film electronic device is produced, actual performance parameters of the first circuit pattern are tested, a correction scheme and a second mask plate of the first circuit pattern are determined according to the difference between the test result and the target performance parameters, and the first circuit pattern is etched again by the etching equipment, so that the purpose of correcting the circuit pattern is achieved. Therefore, the problems that the coating precision of the coating equipment is not high and the working characteristics of a high-precision thin film device cannot be met are solved in a small-range pattern correction mode. Compared with the laser fusing technology, the method only needs to use common etching equipment in the production of the thin-film electronic device, does not need to additionally purchase other equipment, and reduces the correction cost. Because the mask is used for offset etching, the pattern aspect can be subjected to larger strip-shaped etching and rectangular etching, and the limitation that laser fusing can only be subjected to single-point correction is solved. Meanwhile, the existing etching technology can achieve the precision control of the size below 0.1um, and the precision is higher than the controllable precision of laser fusing.
Drawings
Fig. 1 is a schematic flow chart illustrating an implementation of a method for controlling the production of a thin-film electronic device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a production control apparatus for a thin-film electronic device according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a circuit diagram of a thin-film electronic device corresponding to a production flow and steps of a production control method applied to a production scenario according to the present invention;
FIG. 4 is a schematic diagram of an ideal design graph when the production control method provided by the present invention is applied to a production scenario;
FIG. 5 is a schematic diagram of a first circuit diagram when the production control method of the present invention is applied to a production scenario;
FIG. 6 is a schematic diagram of a second circuit diagram when the production control method provided by the present invention is applied to a production scenario.
Detailed Description
In order to more clearly illustrate the embodiments and technical solutions of the present invention, the technical solutions of the present invention will be described in more detail with reference to the accompanying drawings and embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without inventive step, are within the scope of the present invention.
The embodiment of the invention provides a production control device of a thin film electronic device, which can control the operation of other production equipment for producing the thin film electronic device, and comprises the steps of controlling coating equipment to coat a thin film with the thickness of less than 1um on a plane substrate material according to the target function and the characteristic of the thin film electronic device, wherein the thin film material is different according to the different requirements of the function and the characteristic of the device. The production control device can also design a mask plate according to target performance parameters of the thin film electronic device, and enables the etching equipment to etch the thin film on the coated substrate by using the mask plate to form a circuit pattern. The existing coating process and etching process have certain deviation, so that one or more pattern shapes in a circuit pattern formed by only one-time etching often exist and need to be reduced (namely corrected), and the part needing to be reduced is called as a corrected pattern.
Fig. 1 is a schematic flow chart of an implementation of a method for controlling production of a thin-film electronic device according to an embodiment of the present invention, as shown in fig. 1, the method includes:
step 101, after completing first etching by using a first mask and obtaining a first circuit pattern, detecting actual performance parameters of the first circuit pattern;
specifically, after the etching equipment completes the first etching by using the first mask, a corresponding first circuit pattern is obtained, and the detection equipment detects the actual performance parameter of the circuit corresponding to the first circuit pattern. Here, the performance parameter may be an electronic device parameter such as a resistance value, a capacitance value, or the like. In example 1, the thin film electronic device is designed as a resistor, and the first circuit pattern obtained after the first etching is necessarily a resistor, and the actual resistance value of the resistor corresponding to the first circuit pattern is checked as R by using a resistance detection apparatus.
102, calculating the difference between the actual performance parameter and the target performance parameter of the thin film electronic device;
specifically, the production control device subtracts a target performance parameter value of the thin-film electronic device from an actual performance parameter value obtained by detection, and calculates a difference between the actual performance parameter and the target performance parameter of the thin-film electronic device. The target performance parameter values of the thin film electronic devices may be input into the production control apparatus in advance, and the actual performance parameter values obtained by the detection may be read from the detection apparatus. In example 1, the target resistance value of the thin film electronic device should be R0, and the value of R-R0 was calculated.
103, determining a correction scheme of the first circuit pattern and a second mask plate according to a calculation result;
specifically, the production control device determines a modification scheme of the first circuit pattern according to a calculation result and a preset calculation rule, and further includes:
determining the area of the graph needing to be corrected according to the calculation result;
referring to a first mask plate, determining a corrected graph and a specific position and size thereof according to the area of the graph needing to be corrected;
here, the size refers to a geometric parameter of the correction pattern, for example, the correction pattern is a rectangle, and the size refers to the length and width of the rectangle; the corrected graph is a circle, and the size refers to the radius of the circle and the like; furthermore, the corrected graph and the specific position and size of the corrected graph are mainly determined by two factors, namely the original shape of the first circuit graph and the area size of the graph needing to be corrected; the corrected pattern is reduced on the basis of the first circuit pattern, so that the shape of the corrected pattern depends on the original shape of the first circuit pattern, for example, when the first circuit pattern is substantially rectangular, the production control device only needs to reduce a small rectangle with an area meeting the requirement in the large rectangle, and therefore, referring to the first mask, the production control device can determine the specific position and size of the small rectangle;
selecting a second mask plate according to the corrected graph and the specific position and size of the corrected graph, and determining the relative position relation between the second mask plate and the first circuit graph;
here, the second mask may be a pre-designed plate or set of plates, and the shapes of the patterns correctable by different masks are different;
therefore, the second mask can be determined according to the shape of the correction graph, the relative position relation between the second mask and the first graph can be determined according to the specific position and size of the correction graph, and the offset size required by the second mask can be calculated.
So far, the control production device determines a correction scheme of the first circuit pattern and a second mask plate.
104, according to the correction scheme, completing second etching by using a second mask to obtain a corrected second circuit graph;
specifically, the production control device makes the origin of the second mask and the origin of the first circuit pattern perform relative displacement according to the correction scheme determined in the step 103, wherein the displacement dimension is the offset dimension; and then carrying out second etching on the first circuit pattern to obtain a corrected second circuit pattern.
Further, when there is still a portion to be corrected in the corrected second circuit pattern, the second circuit pattern may be regarded as the first circuit pattern, and the above steps 101 to 104 are repeated until the obtained corrected circuit pattern meets the target performance parameter requirement of the thin film electronic device.
In order to ensure the performance parameter deviation of the first circuit pattern obtained by the first etching, the correction may be performed by using a method of reducing the pattern, the method further comprising:
and correcting the design of the first mask plate according to the maximum deviation value of the coating thickness and the maximum etching deviation value.
Fig. 2 is a schematic diagram of a composition structure of a production control apparatus for a thin-film electronic device according to an embodiment of the present invention, and as shown in fig. 2, the production control apparatus includes: a detection module 201, a calculation module 202, a scheme determination module 203 and a correction module 204; wherein,
the detection module 201 is configured to detect an actual performance parameter of a first circuit pattern after a first mask is used to complete a first etching and obtain the first circuit pattern;
a calculation module 202 for calculating a difference between the actual performance parameter and a target performance parameter of the thin film electronic device;
a scheme determining module 203, configured to determine a correction scheme of the first circuit pattern and a second mask according to a calculation result;
and the correcting module 204 is configured to complete second etching by using a second mask according to the correcting scheme, so as to obtain a corrected second circuit pattern.
In the production control apparatus, the calculation module 202 includes:
the area calculation unit is used for determining the area of the graph needing to be corrected according to the calculation result;
the pattern determining unit is used for determining a corrected pattern and the specific position and size of the corrected pattern according to the area of the pattern to be corrected by referring to the first mask;
and the mask plate determining unit is used for selecting a second mask plate according to the corrected graph and the specific position and size of the corrected graph and determining the relative position relation between the second mask plate and the first circuit graph.
In the above production control apparatus, the reticle determining unit includes:
the mask selecting subunit is used for selecting a second mask according to the shape of the corrected graph;
and the position determining subunit is used for determining the relative position relation between the second mask and the first pattern according to the specific position and size of the corrected pattern, and calculating the offset size required by the second mask.
In the production control apparatus, the modification module 204 includes:
the displacement unit is used for making the original point of the second mask plate and the original point of the first circuit graph perform relative displacement, and the displacement size is the offset size;
and the etching unit is used for carrying out second etching on the first circuit pattern to obtain a corrected second circuit pattern.
In practical applications, each module and each unit can be implemented by a Central Processing Unit (CPU), a microprocessor unit (MPU), a Digital Signal Processor (DSP), or a Field Programmable Gate Array (FPGA) in the production control device.
The invention also provides a production control system of the thin film electronic device, which comprises detection equipment, etching equipment and any one of the production control devices.
Example 1
The above-described production control method of a thin-film electronic device is applied to a scenario in which the thin-film electronic device to be produced is a resistor, and the target resistance value should be R0, and the actual resistance value R of the first circuit pattern obtained after the first etching is performed. Fig. 3 is a schematic circuit diagram of a thin-film electronic device corresponding to the steps and a production flow for producing the resistor by using the production control method provided by the invention. The production process comprises the following steps:
1. copper plating is carried out on the oxidized wafer substrate to realize binding of PAD;
2. plating a 100nm platinum film on the wafer;
3. etching a resistance pattern on the platinum coating layer by using the first mask, wherein the oblique stripes are etched parts;
4. measuring an actual resistance value R;
5. calculating the size L of the resistor strip needing to be corrected according to the difference R-R0 between the actual resistance R and the design target R0;
6. according to the corrected size, moving the second mask plate, and performing secondary correction etching on the platinum coating film, wherein the oblique stripe part is an etched part;
7. and finishing the final pattern, and finishing the silicon production process of the resistor device.
Specifically, the above-mentioned resistor production process is applied to the following scenario, wherein the specific principle and process for designing the first mask and the second mask are as follows
The resistivity of platinum is known to be 9.8X 10-8Ω·m@0℃；
The target thickness of the platinum film is 100 nm;
if the width of the platinum resistance line is 30 um;
the cross-sectional area S of the platinum thin film resistor line is 100nm multiplied by 30um to 3um2。
According to the law of resistance, the resistance R of a conductor is proportional to its length L, inversely proportional to its cross-sectional area S, and related to the material rho of the conductor, the formula of resistance is
Therefore, the target resistance value R0 is 100 Ω @0 ℃, and ideally, the thin film resistor line length L should be designed as follows according to the resistance law:
therefore, the theoretical design pattern should be a rectangle of 30um × 3061.22um as shown in fig. 4, but due to the limitation of the coating process, the thickness of the film tends to be wrong, so if each device is manufactured according to the theoretical design pattern, the thickness deviation of the film directly causes the deviation of the operating characteristics of the device. This is also the reason for the 5% deviation of most common thin film devices. (deviation of film thickness-5% to + 5%).
The above theoretical design pattern can thus be modified to a pattern consisting of 3 rectangles as shown in fig. 5, whose dimensions are: 60um × 1100um, 30um × 1100 um;
then according to kirchhoff's law, the total resistance is the sum of the three segmented rectangular resistances, and the effective lengths of the three resistance strips are about:
Lright side＝1100um-30um＝1070um，
LUpper right corner＝30um/2＝15um，
LOn the upper part＝1100um，
LUpper left corner＝30um/2＝15um，
LLeft side of＝1100um-30um＝1070um；
The effective resistance value of the 30um wide rectangle is:
the effective resistance value of the 60um wide rectangle is:
here, the 60um width rectangle needs to be reduced according to the detection result, and the 60um width resistance pattern is a pattern to be corrected.
From this 1 scale data can be derived:
the proportion of the resistance value of the 60um pattern to be corrected in the total resistance value of the first pattern is as follows:
17.7217/(71.3767+17.7217)＝19.89％
therefore, after the first circuit pattern is etched and tested, the resistance value R can be obtained, and the actual measured value of the 60um width effective resistor is RT60R × 19.89%, 30um width effective resistance RT30＝R×(1-19.89％)。
Since the target resistance value is 100 Ω, the width of the 60um width resistance pattern needs to be corrected so that the resistance thereof reaches RTAG＝100-RT30。
According to the law of resistance, the corrected pattern width WTAGRatio to 60um Width and RT60And RTACThe ratio of (A) to (B) is equal and is:
width W to be correctedADJComprises the following steps:
WADJ＝60um-WTAG
here WADJThe dimension L corresponding to the dimension to be corrected in example 1 was corrected, and a second circuit pattern obtained after the correction was shown in fig. 6.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of a hardware embodiment, a software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, optical storage, and the like) having computer-usable program code embodied therein.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (8)
1. A production control method for a thin film electronic device, characterized by comprising:
after completing first etching by using a first mask and obtaining a first circuit pattern, detecting actual performance parameters of the first circuit pattern;
calculating a difference between the actual performance parameter and a target performance parameter of the thin film electronic device;
determining the area of the graph needing to be corrected according to the calculation result;
referring to a first mask plate, determining a corrected graph and a specific position and size thereof according to the area of the graph needing to be corrected;
selecting a second mask plate according to the corrected graph and the specific position and size of the corrected graph, and determining the relative position relation between the second mask plate and the first circuit graph;
and finishing the second etching by using the second mask plate to obtain a corrected second circuit pattern.
2. The production control method of claim 1, wherein selecting the second mask plate according to the corrected pattern and the specific position and size thereof, and determining the relative position relationship between the second mask plate and the first circuit pattern comprises:
selecting a second mask plate according to the shape of the corrected graph;
and determining the relative position relation between the second mask and the first circuit pattern according to the specific position and size of the corrected pattern, and calculating the offset size required by the second mask.
3. The production control method of claim 2, wherein the second etching is performed using a second mask, and obtaining the corrected second circuit pattern comprises:
making the original point of the second mask plate and the original point of the first circuit graph perform relative displacement, wherein the displacement dimension is the offset dimension;
and carrying out second etching on the first circuit pattern to obtain a corrected second circuit pattern.
4. The production control method according to any one of claims 1 to 3, characterized by further comprising:
and when the corrected second circuit pattern still has a part needing to be corrected, correcting the second circuit pattern as the first circuit pattern.
5. A production control apparatus for a thin film electronic device, characterized by comprising: the device comprises a detection module, an area calculation module, a graph determination module, a mask determination module, a scheme determination module and a correction module; wherein,
the detection module is used for detecting the actual performance parameters of the first circuit graph after the first mask is used for completing the first etching and obtaining the first circuit graph;
the area calculation module is used for determining the area of the graph needing to be corrected according to the calculation result;
the pattern determining module is used for determining a corrected pattern and the specific position and size of the corrected pattern according to the area of the pattern to be corrected by referring to the first mask;
the mask determining module is used for selecting a second mask according to the corrected graph and the specific position and size of the corrected graph and determining the relative position relation between the second mask and the first circuit graph;
the scheme determining module is used for determining a correction scheme of the first circuit pattern and a second mask according to a calculation result;
and the correction module is used for finishing second etching by using a second mask plate according to the correction scheme to obtain a corrected second circuit graph.
6. The production control device of claim 5, wherein the reticle determination module comprises:
the mask plate selection unit is used for selecting a second mask plate according to the shape of the corrected graph;
and the position determining unit is used for determining the relative position relation between the second mask and the first pattern according to the specific position and size of the corrected pattern, and calculating the offset size required by the second mask.
7. The production control device of claim 6, wherein the correction module comprises:
the displacement unit is used for making the original point of the second mask plate and the original point of the first circuit graph perform relative displacement, and the displacement size is the offset size;
and the etching unit is used for carrying out second etching on the first circuit pattern to obtain a corrected second circuit pattern.
8. A production control system for a thin film electronic device, comprising a detection apparatus, an etching apparatus, and the production control apparatus according to any one of claims 5 to 7.
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| CN101227800A (en) * | 2008-02-03 | 2008-07-23 | 深圳华为通信技术有限公司 | Apparatus and method for implementing high-precision buried resistance |
| CN104465368A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Contact hole etching device and method |
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| CN104465368A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Contact hole etching device and method |
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