CN105097593B - A kind of production control method of thin film electronic device, apparatus and system - Google Patents
A kind of production control method of thin film electronic device, apparatus and system Download PDFInfo
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- CN105097593B CN105097593B CN201510400561.5A CN201510400561A CN105097593B CN 105097593 B CN105097593 B CN 105097593B CN 201510400561 A CN201510400561 A CN 201510400561A CN 105097593 B CN105097593 B CN 105097593B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
The invention discloses a kind of production control method of thin film electronic device, apparatus and system, wherein, shown method includes：Using the first etching of the first mask completion and after obtaining the first circuitous pattern, the actual performance parameter of first circuitous pattern is detected；Calculate the difference of the actual performance parameter and the target capabilities parameter of the thin film electronic device；According to result of calculation, the amendment scheme and the second mask of first circuitous pattern are determined；According to the amendment scheme, the second etching is completed using the second mask, obtains revised second circuit figure.
Description
Technical field
The present invention relates to semiconductor production field more particularly to a kind of production control method of thin film electronic device, devices
And system.
Background technology
High-precision thin film electronic device needs to ensure the precision of device operational characteristics by film thickness during fabrication.But often
The filming equipment seen can only at most ensure -5%~+5% or so thickness and precision, if device operational characteristics required precision is higher than plating
Film thickness control accuracy can then cause device production yield too low or can not produce.
Therefore, current thin film electronic device often complete produce after, using laser blown metal or polysilicon, to reach
The purpose of circuitous pattern is corrected, and then obtains thin film electronic device target operation characteristic.But laser equipment and non-fabrication thin-film electro
The conventional equipment of sub- device, needs extra purchase, leads to that the production cost increases.Meanwhile laser blown usually can only once be directed to one
A position, the range of modification is smaller, is unable to reach the purpose of larger area circuitous pattern modification, the modified efficiency of circuitous pattern
It is not high.Also, the precision of laser blown is insufficient, can not control to high precision fine tuning process.
Invention content
To solve existing technical problem, an embodiment of the present invention is intended to provide a kind of production controls of thin film electronic device
Method, apparatus and system processed can not increase accurate amendment of the additional generation equipment realization to figure.
What the technical solution of the embodiment of the present invention was realized in：
The embodiment of the present invention provides a kind of production control method of thin film electronic device, and this method includes：
Using the first etching of the first mask completion and after obtaining the first circuitous pattern, first circuitous pattern is detected
Actual performance parameter；
Calculate the difference of the actual performance parameter and the target capabilities parameter of the thin film electronic device；
According to result of calculation, the amendment scheme and the second mask of first circuitous pattern are determined；
According to the amendment scheme, the second etching is completed using the second mask, obtains revised second circuit figure.
It is described according to result of calculation in said program, determine the amendment scheme and the second mask of first circuitous pattern
Version includes：
According to result of calculation, the graphics area for needing to be modified is determined；
With reference to the first mask, the area of correction pattern as needed determines correction pattern and its specific location and size；
According to correction pattern and its specific location and size, the second mask is selected, and determine the second mask and first
The relative position relation of circuitous pattern.
It is described according to correction pattern and its specific location and size in said program, the second mask is selected, and determine the
The relative position relation of two masks and the first circuitous pattern includes：
Second mask is selected according to the shape of correction pattern；
The relative position relation of the second mask and the first figure is determined according to the specific location of correction pattern and size, is counted
Calculate the offset dimensions needed for the second mask.
It is described according to the amendment scheme in said program, the second etching is completed using the second mask, after being corrected
Second circuit figure include：
The second mask origin and the first circuitous pattern origin is made to do relative displacement, displacement scale is above-mentioned offset dimensions；
The second etching is carried out to the first circuitous pattern, obtains revised second circuit figure.
In said program, the method further includes：
When still modified part in need in revised second circuit figure, using the second circuit figure as
One circuitous pattern is modified.
The embodiment of the present invention provides the production control device for also providing a kind of thin film electronic device, which includes：Detection
Module, computing module, scheme determining module and correcting module；Wherein,
Detection module etches and after obtaining the first circuitous pattern for completing first using the first mask, described in detection
The actual performance parameter of first circuitous pattern；
Computing module, for calculate the target capabilities parameter of the actual performance parameter and the thin film electronic device it
Difference；
Scheme determining module, for according to result of calculation, the amendment scheme and second for determining first circuitous pattern to be covered
Masterplate；
Correcting module, for according to the amendment scheme, completing the second etching using the second mask, obtaining revised
Second circuit figure.
In said program, the computing module includes：
Areal calculation unit, for according to result of calculation, determining the graphics area for needing to be modified；
Figure determination unit, for refer to the first mask, the area of correction pattern as needed, determine correction pattern and
Its specific location and size；
Mask determination unit, for according to correction pattern and its specific location and size, selecting the second mask, and really
The relative position relation of fixed second mask and the first circuitous pattern.
In said program, the mask determination unit includes：
Mask selects subelement, for selecting the second mask according to the shape of correction pattern；
Location determination subelement determines the second mask and the first figure for the specific location according to correction pattern and size
The relative position relation of shape calculates the offset dimensions needed for the second mask.
In said program, the correcting module includes：
Displacement unit, for the second mask origin and the first circuitous pattern origin to be made to do relative displacement, displacement scale is
Above-mentioned offset dimensions；
Etch unit for carrying out the second etching to the first circuitous pattern, obtains revised second circuit figure.
The embodiment of the present invention also provides a kind of production control system of thin film electronic device, is set including detection device, etching
Any one standby and above-mentioned production control device.
The production control method for the thin film electronic device that the embodiment of the present invention is provided, apparatus and system, utilize thin-film electro
Common etching apparatus in sub- device production flow replaces laser equipment, has been produced in the first circuitous pattern of thin film electronic device
Cheng Hou tests its practical performance parameter, and according to test result and the difference of target capabilities parameter, determines the first circuitous pattern
Amendment scheme and the second mask etch the first circuitous pattern using etching apparatus, reach amendment circuitous pattern again
Purpose.In this way, by the modified mode of small range figure, it is not high to have evaded filming equipment plated film precision, can not meet high-precision
The problem of spending thin-film device working characteristics.Compared with laser blown technology, this method need to be only used in thin film electronic device production
Common etching apparatus without extra purchase other equipment, reduces amendment cost.Due to utilizing mask offset etching, figure
In terms of shape, larger bar shaped etching and rectangular etching can be done, the modified limitation of single-point can only be done by solving laser blown.Together
When, existing lithographic technique can accomplish the precision controlling of below 0.1um sizes, higher than laser blown controllable precision.
Description of the drawings
Fig. 1 is the realization flow diagram of the production control method of thin film electronic device provided in an embodiment of the present invention；
Fig. 2 is the composition structure diagram of the production control device of thin film electronic device provided in an embodiment of the present invention；
Fig. 3 is right applied to the production procedure in a production scene and each step for production control method provided by the invention
The circuitous pattern schematic diagram for the thin film electronic device answered；
Ideal design pictorial diagram when Fig. 4 produces scene for production control method provided by the invention applied to one；
First circuitous pattern schematic diagram when Fig. 5 produces scene for production control method provided by the invention applied to one；
Second circuit pictorial diagram when Fig. 6 produces scene for production control method provided by the invention applied to one.
Specific embodiment
In order to illustrate the embodiments of the present invention more clearly and technical solution, below in conjunction with accompanying drawings and embodiments to the present invention
Technical solution be described in detail, it is clear that described embodiment is the part of the embodiment of the present invention rather than complete
Portion's embodiment.Based on the embodiment of the present invention, those of ordinary skill in the art are obtained without creative efforts
The every other embodiment obtained, shall fall within the protection scope of the present invention.
A kind of production control device of thin film electronic device is provided in the embodiment of the present invention, which can control production film
The operation of other production equipments of electronic device, it is first on planar substrates material including control filming equipment, according to thin film electronic
Device target function and characteristic, one layer of film for being less than 1um thickness of plating, here, thin-film material will according to device function and characteristic
Ask different and different.The production control device can also be according to the target capabilities parameter designing mask of thin film electronic device, and makes
Etching apparatus performs etching film in the substrate of plated film using mask, forms circuitous pattern.Existing coating process
With etching technics all there are certain deviation, therefore, only by often there are at one in the primary circuitous pattern for etching and being formed
Or graphics shape needs in many places are cut down and (corrected), here, it is referred to as correction pattern to need the part cut out.
Fig. 1 is the realization flow diagram of the production control method of thin film electronic device provided in an embodiment of the present invention, such as
Shown in Fig. 1, this method includes：
Step 101, using the first etching of the first mask completion and after obtaining the first circuitous pattern, detection first electricity
The actual performance parameter of road figure；
Specifically, after etching apparatus completes the first etching using the first mask, corresponding first circuitous pattern is obtained, is examined
Measurement equipment detects the actual performance parameter of the first circuitous pattern corresponding circuits.Here, performance parameter can be resistance value, electricity
The parameters of electronic device such as capacitance.In embodiment 1, thin film electronic device is designed to resistance, the obtained after the first etching
One circuitous pattern necessarily corresponds to resistance, then checks that first circuitous pattern corresponds to the reality of resistance using resistance detection instrument
Resistance value is R.
Step 102, the difference of the actual performance parameter and the target capabilities parameter of the thin film electronic device is calculated；
Specifically, the actual performance parameter value that detection obtains is subtracted the mesh of the thin film electronic device by production control device
Performance parameter value is marked, calculates the difference of the actual performance parameter and the target capabilities parameter of the thin film electronic device.Thin-film electro
The target capabilities parameter value of sub- device can be pre-entered into production control device, and the actual performance parameter value that detection obtains can
It is read from detection device.In embodiment 1, the target resistance values of thin film electronic device should be R0, then calculates the value of R-R0.
Step 103, according to result of calculation, the amendment scheme and the second mask of first circuitous pattern are determined；
Specifically, production control device, according to preset computation rule, determines first circuit diagram according to result of calculation
The amendment scheme of shape, further comprises：
According to result of calculation, the graphics area for needing to be modified is determined；
With reference to the first mask, the area of correction pattern as needed determines correction pattern and its specific location and size；
Here, size refers to the geometric parameter of correction pattern, for example, correction pattern is rectangle, size refers to the length of the rectangle
And width；Correction pattern is circle, and size refers to the circular radius etc.；Further, correction pattern and its specific location and
Size is mainly determined by two factors, when the shape that the first circuitous pattern is original, second is that needing the area of correction pattern big
It is small；Correction pattern is to do to cut down on the basis of the first circuitous pattern, therefore the shape of correction pattern depends on the first circuit diagram
Original shape of shape, for example, when the first circuitous pattern is substantially rectangular in cross section, production control device need to only be cut out in big rectangle
The small rectangle of one area coinciding requirement, therefore, with reference to the first mask, production control device can determine small rectangle
Specific location and size；
According to correction pattern and its specific location and size, the second mask is selected, and determine the second mask and first
The relative position relation of circuitous pattern；
Here, the second mask can be prior designed one block of plate or a cage plate, the different amendable figures of mask
Shape shape is different；
Therefore, the second mask can be determined according to the shape of correction pattern, and according to the specific location and ruler of correction pattern
The very little relative position relation for determining the second mask and the first figure, calculates the offset dimensions needed for the second mask.
So far, control process units determines the amendment scheme and the second mask of first circuitous pattern.
Step 104, according to the amendment scheme, the second etching is completed using the second mask, obtains revised second
Circuitous pattern；
Specifically, production control device according in above-mentioned steps 103 determine amendment scheme, make the second mask origin with
First circuitous pattern origin does relative displacement, and displacement scale is above-mentioned offset dimensions；Then second is carried out to the first circuitous pattern
Etching, obtains revised second circuit figure.
It further, can be by second circuit figure when modified part still in need in revised second circuit figure
It is considered as the first circuitous pattern, repeats the above steps 101 to 104, until circuitous pattern meets the thin-film electro after the amendment obtained
The target capabilities parameter request of sub- device.
In order to ensure the performance parameter deviation of the first circuitous pattern of the first etching acquisition, the method that abatement figure can be used
It is modified, the above method further includes：
According to coating film thickness deviation maximum value and etching deviation maximum value, the design of the first mask is corrected.
Fig. 2 is the composition structure diagram of the production control device of thin film electronic device provided in an embodiment of the present invention, such as
Shown in Fig. 2, which includes：Detection module 201, computing module 202, scheme determining module 203 and correcting module
204；Wherein,
Detection module 201, for using the first etching of the first mask completion and after obtaining the first circuitous pattern, detecting institute
State the actual performance parameter of the first circuitous pattern；
Computing module 202, for calculating the target capabilities parameter of the actual performance parameter and the thin film electronic device
Difference；
Scheme determining module 203, for according to result of calculation, determining the amendment scheme and second of first circuitous pattern
Mask；
Correcting module 204, for according to the amendment scheme, completing the second etching using the second mask, being corrected
Second circuit figure afterwards.
In above-mentioned production control device, the computing module 202 includes：
Areal calculation unit, for according to result of calculation, determining the graphics area for needing to be modified；
Figure determination unit, for refer to the first mask, the area of correction pattern as needed, determine correction pattern and
Its specific location and size；
Mask determination unit, for according to correction pattern and its specific location and size, selecting the second mask, and really
The relative position relation of fixed second mask and the first circuitous pattern.
In above-mentioned production control device, the mask determination unit includes：
Mask selects subelement, for selecting the second mask according to the shape of correction pattern；
Location determination subelement determines the second mask and the first figure for the specific location according to correction pattern and size
The relative position relation of shape calculates the offset dimensions needed for the second mask.
Above-mentioned production control device, the correcting module 204 include：
Displacement unit, for the second mask origin and the first circuitous pattern origin to be made to do relative displacement, displacement scale is
Above-mentioned offset dimensions；
Etch unit for carrying out the second etching to the first circuitous pattern, obtains revised second circuit figure.
Above-mentioned modules and each unit in practical applications, can be by being located at the central processing in production control device
Device (CPU), microprocessor (MPU), digital signal processor (DSP) or field programmable gate array (FPGA) are realized.
The present invention also provides a kind of production control system of thin film electronic device, including detection device, etching apparatus and on
State any one production control device.
Embodiment 1
The production control method of above-mentioned thin film electronic device is applied in following scene, that is, the thin film electronic device to be produced
Part is resistance, and target resistance values should be R0, the actual resistance R of the first circuitous pattern obtained after the first etching.Fig. 3 is
Using production control method provided by the invention produce the resistance production procedure and each step corresponding to thin film electronic device
Circuitous pattern schematic diagram.The production procedure includes：
1. on wafer substrate after oxidation, binding PAD is realized in copper facing；
2. the platinum film of one layer of 100nm is plated on wafer；
3. utilizing the first mask, in platinum film plating layer, resistance pattern is etched, inclined stripe is the part that is etched；
4. measure actual resistance R；
5. according to the gap R-R0 of actual resistance R and design object R0, calculating resistor stripe needs modified size L；
6. according to size is corrected, mobile second mask does platinum plated film second-order correction etching, and inclined stripe part is is carved
Lose part；
7. final graphics are completed, resistance device silicon production technology is completed.
Specifically, above-mentioned resistance production procedure is applied in following scene, covered wherein designing the first mask and second
The concrete principle and process of film version are as follows
Platinum resistivity is 9.8 × 10-8Ω·m@0℃；
Platinum film target thickness is 100nm；
If platinum resistance line thickness is 30um；
Then platinum film resistor lines cross-sectional area S is 100nm × 30um=3um2。
According to the law of resistance, the resistance R of conductor is directly proportional with its length L, and the cross-sectional area S with it is inversely proportional, also with
The material ρ of conductor has relationship, then resistance formula is
Therefore, target resistance values R0 is 0 DEG C of 100 Ω@, then according to the law of resistance it is found that ideally, film resistor line
Length L should be designed as：
Therefore Theoretical Design figure should be 30um × 3061.22um rectangles as shown in Figure 4, but due to coating process
Limitation, film thickness often generates error, so if each device manufactures all in accordance with Theoretical Design figure, then film thickness
Deviation directly results in the deviation of device operational characteristics.The reason of this is also most of general thin device deviation 5%.(plating film thickness
Spend deviation -5%~+5%).
Therefore above-mentioned theory design configuration can be revised as to the figure as shown in Figure 5 being made of 3 rectangles, their ruler
It is very little to be respectively：60um×1100um、30um×1100um、30um×1100um；
Then according to Kirchhoff's law, all-in resistance is the sum of three piecewise rectangular resistance, and three resistor stripe effective lengths are about
For：
LIt is right=1100um-30um=1070um,
LThe upper right corner=30um/2=15um,
LOn=1100um,
LThe upper left corner=30um/2=15um,
LIt is left=1100um-30um=1070um；
30um wide rectangles correspond to effective resistance value：
60um wide rectangles correspond to effective resistance value：
Here, 60um width rectangle need to be reduced according to testing result, and 60um width resistance pattern is modified to need
Figure.
Thus 1 ratio data can be released：
60um figure resistance values to be modified account for the first figure total resistance value ratio：
(17.7217/ 71.3767+17.7217)=19.89%
Therefore the first circuitous pattern completes etching, and after being tested, and can obtain resistance value R, and 60um width has at this time
It is R to imitate resistance actual measured valueT60=R × 19.89%, 30um width effective resistance are RT30=R × (1-19.89%).
Since target resistance values are 100 Ω, it is therefore desirable to correct the width of 60um width resistance patterns so that its resistance reaches
To RTAG=100-RT30。
According to the law of resistance, graphic width W after amendmentTAGWith the ratio and R of 60um widthT60And RTACRatio it is equal,
For：
Need the width W being correctedADJFor：
WADJ=60um-WTAG
Here WADJBeing equivalent to embodiment 1 needs modified size L, corrects and obtains second circuit figure such as Fig. 6 institutes later
Show.
It should be understood by those skilled in the art that, the embodiment of the present invention can be provided as method, system or computer program
Product.Therefore, the shape of the embodiment in terms of hardware embodiment, software implementation or combination software and hardware can be used in the present invention
Formula.Moreover, the present invention can be used can use storage in one or more computers for wherein including computer usable program code
The form of computer program product that medium is implemented on (including but not limited to magnetic disk storage and optical memory etc.).
The present invention be with reference to according to the method for the embodiment of the present invention, the flow of equipment (system) and computer program product
Figure and/or block diagram describe.It should be understood that it can be realized by computer program instructions every first-class in flowchart and/or the block diagram
The combination of flow and/or box in journey and/or box and flowchart and/or the block diagram.These computer programs can be provided
The processor of all-purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices is instructed to produce
A raw machine so that the instruction performed by computer or the processor of other programmable data processing devices is generated for real
The device of function specified in present one flow of flow chart or one box of multiple flows and/or block diagram or multiple boxes.
These computer program instructions, which may also be stored in, can guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works so that the instruction generation being stored in the computer-readable memory includes referring to
Enable the manufacture of device, the command device realize in one flow of flow chart or multiple flows and/or one box of block diagram or
The function of being specified in multiple boxes.
These computer program instructions can be also loaded into computer or other programmable data processing devices so that counted
Series of operation steps are performed on calculation machine or other programmable devices to generate computer implemented processing, so as in computer or
The instruction offer performed on other programmable devices is used to implement in one flow of flow chart or multiple flows and/or block diagram one
The step of function of being specified in a box or multiple boxes.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the scope of the present invention.
Claims (8)
1. a kind of production control method of thin film electronic device, which is characterized in that the method includes：
Using the first etching of the first mask completion and after obtaining the first circuitous pattern, the reality of first circuitous pattern is detected
Performance parameter；
Calculate the difference of the actual performance parameter and the target capabilities parameter of the thin film electronic device；
According to result of calculation, the graphics area for needing to be modified is determined；
With reference to the first mask, the area of correction pattern as needed determines correction pattern and its specific location and size；
According to correction pattern and its specific location and size, the second mask is selected, and determine the second mask and the first circuit
The relative position relation of figure；
The second etching is completed using the second mask, obtains revised second circuit figure.
2. production control method according to claim 1, which is characterized in that described according to correction pattern and its specific location
And size, the second mask is selected, and determine that the relative position relation of the second mask and the first circuitous pattern includes：
Second mask is selected according to the shape of correction pattern；
The relative position relation of the second mask and the first circuitous pattern is determined according to the specific location of correction pattern and size, is counted
Calculate the offset dimensions needed for the second mask.
3. production control method according to claim 2, which is characterized in that the second etching is completed using the second mask,
Revised second circuit figure is obtained to include：
The second mask origin and the first circuitous pattern origin is made to do relative displacement, displacement scale is above-mentioned offset dimensions；
The second etching is carried out to the first circuitous pattern, obtains revised second circuit figure.
4. production control method according to any one of claims 1 to 3, which is characterized in that the method further includes：
When still modified part in need in revised second circuit figure, using the second circuit figure as the first electricity
Road figure is modified.
5. the production control device of a kind of thin film electronic device, which is characterized in that described device includes：Detection module, area meter
Calculate module, figure determining module, mask determining module, scheme determining module and correcting module；Wherein,
Detection module, for using the first etching of the first mask completion and after obtaining the first circuitous pattern, detecting described first
The actual performance parameter of circuitous pattern；
Area calculation module, for according to result of calculation, determining the graphics area for needing to be modified；
Figure determining module, for referring to the first mask, the area of correction pattern as needed determines correction pattern and its tool
Body position and size；
Mask determining module for according to correction pattern and its specific location and size, selecting the second mask, and determines the
The relative position relation of two masks and the first circuitous pattern；
Scheme determining module, for according to result of calculation, determining the amendment scheme and the second mask of first circuitous pattern；
Correcting module, for according to the amendment scheme, completing the second etching using the second mask, obtaining revised second
Circuitous pattern.
6. production control device according to claim 5, which is characterized in that the mask determining module includes：
Mask selecting unit, for selecting the second mask according to the shape of correction pattern；
Position determination unit determines the phase of the second mask and the first figure for the specific location according to correction pattern and size
To position relationship, the offset dimensions needed for the second mask are calculated.
7. production control device according to claim 6, which is characterized in that the correcting module includes：
Displacement unit, for the second mask origin and the first circuitous pattern origin to be made to do relative displacement, displacement scale is above-mentioned
Offset dimensions；
Etch unit for carrying out the second etching to the first circuitous pattern, obtains revised second circuit figure.
8. a kind of production control system of thin film electronic device, including detection device, etching apparatus and according to claim 5 to 7
Any one of them produces control device.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101227800A (en) * | 2008-02-03 | 2008-07-23 | 深圳华为通信技术有限公司 | Apparatus and method for implementing high-precision buried resistance |
| CN104465368A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Contact hole etching device and method |
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| JP3639268B2 (en) * | 2002-06-14 | 2005-04-20 | 株式会社日立製作所 | Etching method |
| JP2007141943A (en) * | 2005-11-15 | 2007-06-07 | Matsushita Electric Ind Co Ltd | Critical area calculation method and yield calculation method |
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| CN101227800A (en) * | 2008-02-03 | 2008-07-23 | 深圳华为通信技术有限公司 | Apparatus and method for implementing high-precision buried resistance |
| CN104465368A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Contact hole etching device and method |
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