CN103972119A - Testing device and method for measuring alignment deviation through testing device - Google Patents
Testing device and method for measuring alignment deviation through testing device Download PDFInfo
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- CN103972119A CN103972119A CN201310030240.1A CN201310030240A CN103972119A CN 103972119 A CN103972119 A CN 103972119A CN 201310030240 A CN201310030240 A CN 201310030240A CN 103972119 A CN103972119 A CN 103972119A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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Abstract
The embodiment of the invention provides a testing device and a method for measuring the alignment deviation of different photoetching layers through the testing device to solve the problems that in the prior art, when the alignment deviation of photoetching layers without a visible mark is measured, measurement can only be carried out through the destructive analyzing method instead of an optics method. The testing device comprises a substrate, at least one symmetric image and at least one second symmetric image, wherein the first symmetric images and the second symmetric images are located on the photoetching layers of the substrate, one first symmetric image and one second symmetric image are in one group, and the first symmetric image and the second symmetric image in the same group are located on the different photoetching layers; the area formed by the second symmetric images in each group divides the area formed by the first symmetric images in the group into two parts in the first symmetry axis direction of the first symmetric images in the group, and the two parts are connected with at most one end of the two ends in the first symmetry axis direction of the first symmetric images in the group.
Description
Technical field
The present invention relates to semiconductor integrated circuit and manufacture field, relate in particular to a kind of testing apparatus and use this testing apparatus to measure the method for deviation of the alignment.
Background technology
In ic manufacturing process, conventionally comprise even tens photoetching processes tens times, photoetching each time all can form a photoetching process layer, and the alignment precision of different photoetching process layers is very important.At present, conventionally can design a set of vernier scale and alignment mark in each layer photoetching version, wherein alignment mark for before photoetching to version, by last photoetching, mark in the reticle of the alignment mark staying on silicon chip staying after etching during with this time photoetching is aimed at, and vernier scale is used in photoetching, after etching, by special measurement board or directly under the microscope reading judge that aligning is whether in critical field, if after photoetching, find to aim at not within critical field, can wash so photoresist off, re-start photoetching, if and etching or inject after, find to aim at not in critical field, can only will adopt the method for some correction or stop subsequent technique so.
In integrated circuit is manufactured, conventionally before chip shipment, monitor the quality of manufacturing process and device performance by electric performance test at the various testing apparatuss of periphery design of main substrate.In integrated circuit manufacture field, existing testing apparatus can only be used for the doping content of the each level of measurement and monitoring, the connection state of metal wire and device, various electric properties of device etc. that chip comprises.
On silicon chip, do not leave the doping level of witness marking for some, for example, adulterated in certain region in silicon chip, due to the surface in region after doping and the surface in unadulterated region while seeing under the microscope without any difference, therefore after being adulterated in this region in silicon chip and after removing photoresist, can on silicon chip, not leave any visible mark, cannot judge whether the relative position of twice doping meets standard.Even while finding component failure in testing electrical property below, also cannot measure or the method for microscope reading is determined deviation of the alignment by machine.Existing analytical method can only be cut by section, and with chemical reagent dyeing, measure deviation of the alignment, and the accuracy rate of measuring is also not too high under scanning tunnel microscope.
In sum, in prior art, if comprise some in integrated circuit fabrication process and can not stay the photoetching process layer of witness marking, while finding component failure in testing electrical property so below, if need to measure the deviation of the alignment of photoetching process layer that these do not leave witness marking time, can only cut by section, and with chemical reagent dyeing, under scanning tunnel microscope, measure deviation of the alignment.
Summary of the invention
The embodiment of the present invention provides a kind of testing apparatus and has used this testing apparatus to measure the method for deviation of the alignment, in order to solve in prior art measuring while not leaving the deviation of the alignment of photoetching process layer of witness marking, the problem that can only measure by destructive analytical method.
Based on the problems referred to above, a kind of testing apparatus that the embodiment of the present invention provides, comprise: substrate, and be positioned at least one first symmetric figure on the photoetching process layer of substrate, and be positioned at least one second symmetric figure on the photoetching process layer of substrate, described the first symmetric figure is identical with the quantity of described the second symmetric figure, first symmetric figure and second symmetric figure form one group, the first symmetric figure is on the same group positioned at different photoetching process layers from the second symmetric figure, not overlapping each other by the region that or not second symmetric figure in does not on the same group form, by region that the first symmetric figure in does not on the same group form and not overlapping each other by the region that or not second symmetric figure in does not on the same group form,
The region being formed by the second symmetric figure in every group is two parts along the first symmetry axis direction of the first symmetric figure in this group by the region separation being formed by the first symmetric figure in this group, and described two parts have at most one end to be connected in the two ends in the first symmetry axis direction of the first symmetric figure in this group; A symmetry axis of the second symmetric figure in every group is parallel with the first symmetry axis of the first symmetric figure in this group.
The embodiment of the present invention also provides a kind of method that uses testing apparatus that the embodiment of the present invention provides to measure deviation of the alignment, comprising:
For the first symmetric figure and the second symmetric graph in same group; If two parts that the region separation being formed by this first symmetric figure is obtained are not connected, measure respectively the first symmetrical axial resistance of these two parts along the first symmetric figure in this group;
If two parts that the region separation being formed by this first symmetric figure is obtained are connected along the Zhong You one end, two ends in the first symmetry axis direction of this first symmetric figure, measure between be not connected end and first measurement point of Part I in these two parts along the resistance in the first symmetry axis direction of this first symmetric figure, described the first measurement point is not less than the overlapping region of this first symmetric figure and this second symmetric figure along the length of this direction along this direction with the distance of the end that is not connected in Part I, be not more than the region that formed by this first symmetric figure length along this direction, and measure between be not connected end and second measurement point of two Part II in part along the resistance in the first symmetry axis direction of this first symmetric figure, described the second measurement point is not less than the overlapping region of this first symmetric figure and this second symmetric figure along the length of this direction along this direction with the distance of the end that is not connected in Part II, is not more than the region that formed by this first symmetric figure length along this direction, described the first measurement point along this direction and in Part I not being connected end distance equal described the second measurement point along this direction with in Part II be not connected hold distance,
According to the difference of the resistance measuring, determine that the photoetching process layer at this first symmetric figure place and the photoetching process layer at this second symmetric figure place are along the first symmetrical axial deviation of the alignment perpendicular to this first symmetric figure.
The beneficial effect of the embodiment of the present invention comprises:
A kind of testing apparatus that the embodiment of the present invention provides and this testing apparatus of use are measured the method for deviation of the alignment, by at least one first symmetric figure of photoetching on substrate and at least one second symmetric figure, wherein the first symmetric figure is identical with the quantity of the second symmetric figure, first symmetric figure and second symmetric figure form one group, the first symmetric figure is on the same group positioned at different photoetching process layers from the second symmetric figure, not overlapping each other by the region that or not second symmetric figure in does not on the same group form, by region that the first symmetric figure in does not on the same group form and not overlapping each other by the region that or not second symmetric figure in does not on the same group form, a symmetry axis of the second symmetric figure in every group is parallel with the first symmetry axis of the first symmetric figure in this group, the region being formed by the second symmetric figure in every group is two parts along the first symmetry axis direction of the first symmetric figure in this group by the region separation being formed by the first symmetric figure in this group, and described two parts have at most one end to be connected in the two ends in the first symmetry axis direction of the first symmetric figure in this group.In follow-up electrical measurement, measure respectively two parts that the region separation being formed by the first symmetric figure in same group is obtained the first symmetrical axial resistance along the first symmetric figure in this group, and according to the difference of the resistance measuring, determine that the photoetching process layer at the second symmetric figure place in the photoetching process layer at the first symmetric figure place in this group and this group is along the first symmetrical axial deviation of the alignment of the first symmetric figure perpendicular in this group.Wherein, the first symmetric figure in same group and the second symmetric figure can be arranged at respectively in two photoetching process layers need to measuring deviation of the alignment, so only need in the time forming this two photoetching process layers, form in passing the first symmetric figure and the second symmetric figure, and need to measure the deviation of the alignment of these two photoetching process layers time, only need to be in follow-up electrical measurement measure two resistance more.Therefore, while manufacturing this testing apparatus, do not need additionally to increase manufacturing process, while measuring the deviation of the alignment of the different photoetching process layers in this chip, also can in follow-up electrical measurement, carry out in passing, and do not need to destroy this chip, thereby overcome in prior art measuring while not leaving the deviation of the alignment of photoetching process layer of witness marking the problem that can only measure by destructive analytical method.
Brief description of the drawings
The vertical view of the first symmetric figure in comprise in the testing apparatus that Fig. 1 a Fig. 1 b provides for the embodiment of the present invention same group and the position relationship of the second symmetric figure;
Two the first symmetric figures that comprise in the testing apparatus that Fig. 2 provides for the embodiment of the present invention are when overlapping, the vertical view of the position relationship of the figure in two groups that comprise these two the first symmetric figures;
The region that the first symmetric figure by same group that Fig. 3 A provides for the embodiment of the present invention forms and the region being formed by the second symmetric figure in this group are the profile of the testing apparatus of doped region;
The region that the first symmetric figure by same group that Fig. 3 B1 and Fig. 3 B2 provide for the embodiment of the present invention forms and the region being formed by the second symmetric figure in this group are the vertical view of the testing apparatus of doped region;
The region that the first symmetric figure by same group that Fig. 3 C-Fig. 3 E provides for the making embodiment of the present invention forms and the region being formed by the second symmetric figure in this group are the schematic diagram of the middle process flow process of the testing apparatus of doped region;
The region that the first symmetric figure by same group that Fig. 4 A provides for the embodiment of the present invention forms is that Implantation region and the region that formed by the second symmetric figure in this group are the profile that injects the testing apparatus of barrier zones;
The region that the first symmetric figure by same group that Fig. 4 B1 and Fig. 4 B2 provide for the embodiment of the present invention forms is that Implantation region and the region that formed by the second symmetric figure in this group are the vertical view that injects the testing apparatus of barrier zones;
Fig. 4 C-Fig. 4 F for the region that the first symmetric figure by same group of providing of the embodiment of the present invention is provided forms be that Implantation region and the region that formed by the second symmetric figure in this group are the schematic diagram of the technological process of the centre of the testing apparatus of injection barrier zones;
The testing apparatus that the use embodiment of the present invention that Fig. 5 a provides for the embodiment of the present invention provides is measured the flow chart of one of method of deviation of the alignment;
Testing apparatus that the use embodiment of the present invention that Fig. 5 b provides for the embodiment of the present invention provides is measured two flow chart of the method for deviation of the alignment.
Embodiment
A kind of testing apparatus that the embodiment of the present invention provides and this testing apparatus of use are measured the method for deviation of the alignment, by form respectively the first symmetric figure and the second symmetric figure in same group in the photoetching process layer that need to measure deviation of the alignment, and measure two parts that the region separation being formed by the first symmetric figure in this group is obtained the first symmetrical axial resistance along the first symmetric figure in this group, according to the difference of the resistance measuring, determine that the photoetching process layer at the second symmetric figure place in the photoetching process layer at the first symmetric figure place in this group and this group is along the first symmetrical axial deviation of the alignment of the first symmetric figure perpendicular in this group, thereby overcome in prior art measuring while not leaving the deviation of the alignment of photoetching process layer of witness marking, the problem that can only measure by destructive analytical method.
Below in conjunction with Figure of description, a kind of testing apparatus that the embodiment of the present invention is provided and the embodiment that uses this testing apparatus to measure the method for deviation of the alignment describe.
A kind of testing apparatus that the embodiment of the present invention provides, comprise: substrate, and be positioned at least one first symmetric figure on the photoetching process layer of substrate, and be positioned at least one second symmetric figure on the photoetching process layer of substrate, wherein, the first symmetric figure is identical with the quantity of the second symmetric figure, first symmetric figure and second symmetric figure form one group, the first symmetric figure is on the same group positioned at different photoetching process layers from the second symmetric figure, not overlapping each other by the region that or not second symmetric figure in does not on the same group form, by region that the first symmetric figure in does not on the same group form and not overlapping each other by the region that or not second symmetric figure in does not on the same group form, the region being formed by the second symmetric figure in every group is two parts along the first symmetry axis direction of the first symmetric figure in this group by the region separation being formed by the first symmetric figure in this group, these two parts have at most one end to be connected in the two ends in the first symmetry axis direction of the first symmetric figure in this group, and in these two parts, any one part has at most one end to be connected with another part in the two ends in the first symmetry axis direction of the first symmetric figure in this group, a symmetry axis of the second symmetric figure in every group is parallel with the first symmetry axis of the first symmetric figure in this group.
Wherein, substrate photoetching has once been increased to a photoetching process layer exactly on substrate.
In a certain concrete application scenarios, the first symmetric figure be arranged in photoetching process layer A with substrate can acceptance test region corresponding region, the second symmetric figure be arranged in photoetching process layer B with substrate can acceptance test region corresponding region.After priority Twi-lithography and follow-up injection or etching technics, the figure of photoetching process layer A and photoetching process layer B is successively formed on substrate, meanwhile, the first symmetric figure and the second symmetric figure also form on substrate, they be arranged in substrate among can acceptance test region.
One group of first symmetric figure and the second symmetric figure, can only measure the photoetching process layer at the second symmetric figure place in photoetching process layer and this group at the first symmetric figure place in this group along the first symmetrical axial deviation of the alignment of the first symmetric figure perpendicular in this group.If measure two photoetching process layers in two directions, as the deviation of the alignment of first direction and second direction, just must on these two photoetching process layers, make two group of first symmetric figure and the second symmetric figure, wherein, the first symmetry axis of the first symmetric figure in a group is perpendicular to first direction, and the first symmetry axis of the first symmetric figure in another group is perpendicular to second direction.
In addition, not overlapping each other by the region that or not second symmetric figure in does not on the same group form, by region that the first symmetric figure in does not on the same group form and not overlapping each other by the region that or not second symmetric figure in does not on the same group form; But, each other can be overlapping by the region that or not first symmetric figure in does not on the same group form, can be not overlapping yet.
In practical operation, can adopt various symmetric figures as the first symmetric figure and the second symmetric figure, for example, the first symmetric figure adopts the figure of " work " font, the symmetric figure such as figure, rectangle of " T " font; The second symmetric figure adopts the figure of " work " font, the symmetric figure such as figure, rectangle of " T " font.
All adopt rectangle to describe with the first symmetric figure and the second symmetric figure below.
The region being formed by the second symmetric figure in every group is two parts along the first symmetry axis direction of the first symmetric figure in this group by the region separation being formed by the first symmetric figure in this group, and these two parts have at most one end to be connected in the two ends in the first symmetry axis direction of the first symmetric figure in this group.This has comprised two kinds of situations, the one, and, these two parts have one end to be connected; The 2nd,, these two parts are not connected.
In the time that these two parts have one end to be connected, as shown in Figure 1a, the region 102 being formed by the second symmetric figure in every group is divided into two parts along the first symmetry axis 103 directions of the first symmetric figure in this group by the region 101 being formed by the first symmetric figure in this group, and a part comprises A
1part and A
2part, another part comprises B
1part and B
2part; If remove A
2part and B
2part, A1 part and B1 part can not conduct so, that is to say that A1 part and B1 partly can only pass through A
2part and B
2part conducts.
In the time that these two parts are not connected, as shown in Figure 1 b, the region 102 being formed by the second symmetric figure in every group is divided into two parts along the first symmetry axis 103 directions of the first symmetric figure in this group by the region 101 being formed by the first symmetric figure in this group, and these two parts can not conduct.
In a certain concrete application scenarios, need to be to substrate A photoetching 3 times, that is to say and on substrate, increased by 3 photoetching process layers, be respectively photoetching process layer A, photoetching process layer B and photoetching process layer C, wherein photoetching process layer A is that figure A, photoetching process layer B are that figure B, photoetching process layer C are figure C.If measure photoetching process layer A and photoetching process layer B along the deviation of the alignment of first direction, namely measurement pattern A and figure B along first direction deviation of the alignment, so just need to be in the time of litho pattern A with in substrate can acceptance test region corresponding region make the first symmetric figure A1, the first symmetry axis of the first symmetric figure A1 is perpendicular to first direction, in the time of litho pattern B with in substrate can acceptance test region corresponding region make the second symmetric figure B1, the first symmetric figure A1 and the second symmetric figure B1 form one group, if measure photoetching process layer A and photoetching process layer C along the deviation of the alignment of first direction, namely measurement pattern A and figure C are along the deviation of the alignment of first direction, so just need to be in the time of litho pattern A with in substrate can acceptance test region corresponding region make the first symmetric figure A2, the first symmetry axis of the first symmetric figure A2 is perpendicular to first direction, in the time of litho pattern C with in substrate can acceptance test region corresponding region make the second symmetric figure C1, the first symmetric figure A2 and the second symmetric figure C1 form one group, if measure photoetching process layer B and photoetching process layer C along first direction deviation of the alignment, namely measurement pattern B and figure C are along the deviation of the alignment of first direction, so just need to be in the time of litho pattern B with in substrate can acceptance test region corresponding region make the first symmetric figure B2, the first symmetry axis of the first symmetric figure B2 is perpendicular to first direction, in the time of litho pattern C with in substrate can acceptance test region corresponding region make the second symmetric figure C2, the first symmetric figure B2 and the second symmetric figure C2 form one group, if also need to measure photoetching process layer B and photoetching process layer C along second direction deviation of the alignment, wherein, second direction is perpendicular to first direction, namely measurement pattern B and figure C are along the deviation of the alignment of second direction, so just need to be in the time of litho pattern B with in substrate can acceptance test region corresponding region make again the first symmetric figure D1, the first symmetry axis of the first symmetric figure D1 is perpendicular to second direction, in the time of litho pattern C again with in substrate can acceptance test region corresponding region make the second symmetric figure D2, the first symmetric figure D1 and the second symmetric figure D2 form one group.
Wherein, the region being formed by the second symmetric figure B1, the region being formed by the second symmetric figure C1, the region being formed by the second symmetric figure C2, the region being formed by the second symmetric figure D2 are not overlapping each other; The region being formed by the second symmetric figure B1, the region being formed by the first symmetric figure A2, the region being formed by the first symmetric figure B2, the region being formed by the first symmetric figure D1 are not overlapping each other; The region being formed by the second symmetric figure C1, the region being formed by the first symmetric figure A1, the region being formed by the first symmetric figure B2, the region being formed by the first symmetric figure D1 are not overlapping each other; The region being formed by the second symmetric figure C2, the region being formed by the first symmetric figure A1, the region being formed by the first symmetric figure A2, the region being formed by the first symmetric figure D1 are not overlapping each other; The region being formed by the second symmetric figure D2, the region being formed by the first symmetric figure A1, the region being formed by the first symmetric figure A2, the region being formed by the first symmetric figure B2 are not overlapping each other.
Fig. 2 has provided in the time that the region 201 being formed by the first symmetric figure B2 and the region 203 being formed by the first symmetric figure D1 are overlapped, the position relationship in the region 201 being formed by the first symmetric figure B2, the region 202 being formed by the second symmetric figure C2, the region 203 being formed by the first symmetric figure D1, the region 204 that formed by the second symmetric figure D2.
Preferably, the region being formed by the first symmetric figure A1, the region being formed by the first symmetric figure A2, the region being formed by the first symmetric figure B2, the region being formed by the first symmetric figure D1 are not overlapping each other.
Further, the region being formed by the first symmetric figure in same group and the region being formed by the second symmetric figure in this group are doped region, as shown in Fig. 3 A and Fig. 3 B1 (or Fig. 3 B2).In actual mechanical process, can form two doped regions shown in Fig. 3 A and Fig. 3 B1 (or Fig. 3 B2) by following steps: first, on substrate 10, plate the first mask layer 11, in the first mask layer 11, make the first symmetric figure by lithography, as shown in Figure 3 C; Then, adulterated in the region not covered by the first mask layer 11 in substrate 10, obtain the region 12 that formed by the first symmetric figure, as shown in Figure 3 D; Then, then the first mask layer 11 is removed, and formed the second mask layer 13, in the second mask layer 13, make the second symmetric figure by lithography, as shown in Fig. 3 E; Then, adulterated in the region not covered by the second mask layer 13 in substrate, obtain the region 14 that formed by the second symmetric figure, and remove the second mask layer 13, as shown in Figure 3A.Region 12 is different with the doping type in region 14, and the degree of depth in region 14 is greater than the degree of depth in region 12, and the doping content in region 14 is also greater than the doping content in region 12.In the time that the position relationship in the region of the second symmetric figure formation in region and this group that the first symmetric figure in this group forms is as shown in Fig. 3 B1, be that two parts separating of 12Bei region, region 14 are not connected, can conducting due to the existence of two PN junctions between two parts that therefore separate in region 12Bei region 14; In the time that the position relationship in the region of the second symmetric figure formation in region and this group that the first symmetric figure in this group forms is as shown in Fig. 3 B2, being two parts separating of 12Bei region, region 14 is connected along the Zhong You one end, two ends in the first symmetry axis direction of the first symmetric figure in this group, the region that these two parts are removed after coupling part can not conduct due to the existence of two PN junctions, be that these two parts can only conduct by coupling part, the line of demarcation of these two parts is the symmetry axis of the first symmetric figure in this group.
In the situation shown in Fig. 3 A and Fig. 3 B1 (or Fig. 3 B2), when the photoetching process layer at the first symmetric figure place and the photoetching process layer at the second symmetric figure place are completely on time, two parts that separate in 12Bei region, region 14 are identical; And the photoetching process layer at the first symmetric figure place is not identical with two parts that the deviation of the alignment of the photoetching process layer at the second symmetric figure place can cause 12Bei region, region 14 to be separated; Therefore the two-part difference that the deviation of the alignment of the photoetching process layer at the photoetching process layer at the first symmetric figure place and the second symmetric figure place can be separated with 12Bei region, region 14, as the difference of resistance represents.
Further, the region being formed by the first symmetric figure in same group is Implantation region, and the region being formed by the second symmetric figure in this group is to inject barrier zones, as shown in Fig. 4 A and Fig. 4 B1 (or Fig. 4 B2).In actual mechanical process, can on substrate, form by following steps the Implantation region shown in Fig. 4 A and Fig. 4 B1 (or Fig. 4 B2) and inject barrier zones: first, on substrate 10, use certain material film plating, form rete 21, wherein, this material can be polysilicon, and as shown in Figure 4 C, the layer that this material forms is finally included in chip; Then, on substrate, plate the 3rd mask layer 22, and in the 3rd mask layer 22, the 3rd mask layer outside the second symmetric figure is removed, as shown in Figure 4 D; Then, substrate 10 is carried out to etching, the rete 21 in the region the region under the 3rd mask layer 22 is all removed, and remove the 3rd mask layer 22, obtain injecting barrier zones 23, as shown in Figure 4 E; Then, on substrate, plate the 4th mask layer 24, and make the first symmetric figure by lithography in the 4th mask layer 24, as shown in Fig. 4 F; Then, then substrate is carried out to Implantation, obtain two Implantation regions 25, and remove the 4th mask layer 24, as shown in Figure 4 A.Wherein, in the time that the position relationship in the region that the second symmetric figure in region and this group that the first symmetric figure in this group forms forms is as shown in Fig. 4 B1, two Implantation regions 25 are connected; In the time that the position relationship in the region of the second symmetric figure formation in region and this group that the first symmetric figure in this group forms is as shown in Fig. 4 B2, two Implantation regions 25 are connected by coupling part, and the line of demarcation of these two parts is the symmetry axis of the first symmetric figure in this group.
Preferably, the region being formed by the second symmetric figure in every group is two parts that can not conduct along the first symmetry axis direction of the first symmetric figure in this group by the region separation being formed by the first symmetric figure in this group, that is to say that these two parts can not be connected.
In the situation shown in Fig. 4 A and Fig. 4 B1, when the photoetching process layer at the first symmetric figure place and the photoetching process layer at the second symmetric figure place are completely on time, two Implantation regions 25 are identical; The photoetching process layer at the first symmetric figure place can cause two Implantation regions 25 not identical with the deviation of the alignment of the photoetching process layer at the second symmetric figure place; Therefore the symmetric deviations of the photoetching process layer at the photoetching process layer at the first symmetric figure place and the second symmetric figure place can be by the difference between two Implantation regions 25, as the difference of resistance represents.
In actual applications, the deviation of the alignment of the photoetching process layer at the first symmetric figure place in every group and the photoetching process layer at the second symmetric figure place has a maximum, if the deviation of the alignment of these two photoetching process layers exceedes this maximum, will cause chip failure, this maximum is largest tolerable deviation of the alignment.
Therefore, preferably, in the testing apparatus providing in the embodiment of the present invention, the region being formed by the first symmetric figure in every group is separated to the first symmetrical axial length of end along the first symmetric figure perpendicular in this group that is not connected in any one part in two parts that obtain, be not more than first threshold with the photoetching process layer at the second symmetric figure place in photoetching process layer and this group at the first symmetric figure place in this group along the ratio of the first symmetrical axial largest tolerable deviation of the alignment δ of the first symmetric figure perpendicular in this group, wherein, first threshold can be 10, that is to say, any one part in two parts that the region separation being formed by the first symmetric figure in every group is obtained is along the first symmetrical axial length of the first symmetric figure perpendicular in this group, with largest tolerable deviation of the alignment δ be the same order of magnitude.
In the situation shown in Fig. 3 A, two ends that are not connected that separate in two parts that obtain in 12Bei region, region 14 are respectively w along the first symmetrical axial length perpendicular to the first symmetric figure
11and w
12; Work as w
11and w
12during all much larger than largest tolerable deviation δ, when in follow-up electrical measurement, measured zone 12 is separated two parts obtaining along the first symmetrical axial resistance of the first symmetric figure by region 14 respectively, due to w
11and w
12excessive two resistance values measuring of causing are too small, thereby are difficult to tell the difference of these two resistance values, therefore w
11and w
12to be all the same order of magnitude with largest tolerable deviation δ.
In the situation shown in Fig. 4 A, the end that is not connected in two Implantation regions 25 is respectively w along the first symmetrical axial length perpendicular to the first symmetric figure
21and w
22; Work as w
21and w
22during all much larger than largest tolerable deviation δ, measure respectively two Implantation regions 25 along the first symmetrical axial resistance of the first symmetric figure in follow-up electrical measurement time, due to w
21and w
22excessive two resistance values measuring of causing are too small, thereby are difficult to tell the difference of these two resistance values, therefore, and w
21and w
22to be all the same order of magnitude, therefore w with largest tolerable deviation δ
21and w
22also to be all the same order of magnitude with largest tolerable deviation δ.
Further, due in actual process process, the degree of depth in the region being formed by the first symmetric figure is not identical in each position, and the degree of depth at zone boundary place is slightly less than the degree of depth in centre position, region.
Therefore, preferably, in the testing apparatus providing in the embodiment of the present invention, the degree of depth in the region being formed by the first symmetric figure in every group, is less than the first symmetrical axial length of end along the first symmetric figure perpendicular in this group that is not connected in any one part in two parts that the region separation being formed by the first symmetric figure in this group is obtained.
In the situation shown in Fig. 3 A, 12Bei region, region 14 is separated in two parts that obtain in any one part near the degree of depth of the position in region 14 and is larger than in this part the degree of depth away from the position in region 14.Work as w
11and w
12while being less than the degree of depth at the centre position place in the region being formed by the first symmetric figure, the inhomogeneities of the degree of depth in the region that the first symmetric figure forms can not be ignored, when in follow-up electrical measurement, measured zone 12 is separated two parts obtaining along the first symmetrical axial resistance of the first symmetric figure by region 14 respectively, two resistance values that very difficult basis measures are determined w
11and w
12.Therefore, w
11and w
12to all be greater than the degree of depth at the centre position place in the region being formed by the first symmetric figure.
In the situation shown in Fig. 4 A, the degree of depth at the centre position place in any one the Implantation region in two Implantation regions 25 is larger than the degree of depth at boundary position place.Work as w
21and w
22while being less than the degree of depth at centre position place in any one Implantation region, the inhomogeneities of the degree of depth in the region being formed by the first symmetric figure can not be ignored, when in follow-up electrical measurement, respectively two Implantation regions 25 are along the first symmetrical axial resistance of the first symmetric figure, two resistance values that very difficult basis measures are determined w
21and w
22.Therefore, w
21and w
22to all be greater than the degree of depth at the centre position place in any one Implantation region.
Preferably, in the testing apparatus providing in the embodiment of the present invention, the overlapping region of the second symmetric figure in the first symmetric figure in every group and this group, along the first symmetrical axial length of the first symmetric figure in this group, is greater than and not being connected in any one part in two parts that the region separation being formed by the first symmetric figure in this group is obtained holds the first symmetrical axial length along the first symmetric figure perpendicular in this group.
In the time there is deviation of the alignment in the photoetching process layer at the second symmetric figure place in photoetching process layer and this group at the first symmetric figure place in this group the first symmetry axis direction in the first symmetric figure perpendicular in this group, the overlapping region of the second symmetric figure in the first symmetric figure in this group and this group is larger along the first symmetrical axial length of the first symmetric figure in this group, while measuring respectively two parts that the region separation that just formed by the first symmetric figure in this group obtains along the first symmetrical axial resistance of the first symmetric figure in this group, the difference of two resistance that measure is just larger.Therefore, the overlapping region of the second symmetric figure in the first symmetric figure in every group and this group is along the first symmetrical axial length of the first symmetric figure in this group, hold the first symmetrical axial length along the first symmetric figure perpendicular in this group much larger than not being connected in any one part in two parts that the region separation being formed by the first symmetric figure in this group is obtained.
In the situation shown in Fig. 3 A and Fig. 3 B1, two ends that are not connected of two parts that obtain are separated along the first symmetrical axial length w perpendicular to the first symmetric figure in 12Bei region, region 14
11and w
12, the first symmetrical axial length l that all will be much smaller than the overlapping region in region 12 and region 14 along the first symmetric figure
1.
In the situation shown in Fig. 4 A and Fig. 4 B1 (or Fig. 4 B2), two ends that are not connected in two Implantation regions 25 are along the first symmetrical axial length w perpendicular to the first symmetric figure
21and w
22, all will be much smaller than forming first symmetric figure in two Implantation regions 25 and the overlapping region of the second symmetric figure the first symmetrical axial length l along the first symmetric figure
2.
The embodiment of the present invention also provides a kind of method that uses testing apparatus that the embodiment of the present invention provides to measure deviation of the alignment, in two disjunct situations of part that the region separation being formed by this first symmetric figure is obtained (situation shown in Fig. 3 B1 and Fig. 4 B1), as shown in Figure 5 a, comprise the following steps:
S5a01, for the first symmetric figure and the second symmetric figure in one group, measure respectively two parts that the region separation being formed by the first symmetric figure in this group is obtained the first symmetrical axial resistance along the first symmetric figure in this group;
S5a02, according to the difference of the resistance that measures, determine that the photoetching process layer at the second symmetric figure place in photoetching process layer and this group at the first symmetric figure place in this group is along the first symmetrical axial deviation of the alignment of the first symmetric figure perpendicular in this group.
Wherein, determine that according to following formula the photoetching process layer at the second symmetric figure place in photoetching process layer and this group at the first symmetric figure place in this group is along the axial deviation of the alignment of symmetry of the first symmetric figure perpendicular in this group:
The resistivity in the region that the first symmetric figure that wherein, ρ serves as reasons in this group forms; The degree of depth in the region that the first symmetric figure that d serves as reasons in this group forms; The region that the first symmetric figure that l serves as reasons in this group forms is along the first symmetrical axial length of the first symmetric figure in this group; R
1for a part in two parts that the region separation being formed by the first symmetric figure in this group is obtained is along the first symmetrical axial resistance of the first symmetric figure in this group; R
2for another part in these two parts is along the first symmetrical axial resistance of the first symmetric figure in this group.
In the situation shown in Fig. 3 A and Fig. 3 B1, d is d
1, l is l
1, Δ X is w
11-w
12; In the situation shown in Fig. 4 A and Fig. 4 B1, d is d
2, l is l
2, Δ X is w
21-w
22.
The embodiment of the present invention also provides a kind of method that uses testing apparatus that the embodiment of the present invention provides to measure deviation of the alignment, in the case of two parts that the region separation being formed by this first symmetric figure is obtained are connected along the Zhong You one end, two ends in the first symmetry axis direction of this first symmetric figure, as shown in Figure 5 b, comprise the following steps:
S5b01, for the first symmetric figure and the second symmetric figure in one group, if two parts that the region separation being formed by this first symmetric figure is obtained are connected along the Zhong You one end, two ends in the first symmetry axis direction of this first symmetric figure, measure between be not connected end and first measurement point of Part I in these two parts along the resistance in the first symmetry axis direction of this first symmetric figure, this first measurement point is not less than the overlapping region of this first symmetric figure and this second symmetric figure along the first symmetrical axial length of this first symmetric figure along this direction with the distance of the end that is not connected in Part I, be not more than the region that formed by this first symmetric figure the first symmetrical axial length along this first symmetric figure, and measure between be not connected end and second measurement point of two Part II in part along the resistance in the first symmetry axis direction of this first symmetric figure, this second measurement point is not less than the overlapping region of this first symmetric figure and this second symmetric figure along the first symmetrical axial length of this first symmetric figure along the first symmetry axis direction of this first symmetric figure with the distance of the end that is not connected in Part II, is not more than the region that formed by this first symmetric figure the first symmetrical axial length along this first symmetric figure, described the first measurement point along the first symmetry axis direction of this first symmetric figure and in Part I not being connected end distance equal described the second measurement point along the first symmetry axis direction of this first symmetric figure with in Part II be not connected hold distance, that is to say that the first measurement point and the second measurement point are all arranged in the A of Fig. 1 a
2region and B
2region,
S5b02, according to the difference of the resistance that measures, determine that the photoetching process layer at the second symmetric figure place in photoetching process layer and this group at the first symmetric figure place in this group is along the first symmetrical axial deviation of the alignment of the first symmetric figure perpendicular in this group.
Preferably, the overlapping region that can select to equal this first symmetric figure and this second symmetric figure along the distance of the first symmetry axis direction of this first symmetric figure and not the being connected end in Part I along the length of this direction o'clock as the first measurement point, and the overlapping region of selecting to equal this first symmetric figure and this second symmetric figure along the first symmetry axis direction of this first symmetric figure and the distance of holding not being connected in Part II along the length of this direction o'clock as the second measurement point.
In the situation shown in Fig. 3 A and Fig. 3 B2, d is d
1, l is not less than l
1and be not more than the region that formed by the first symmetric figure the first symmetrical axial length along this first symmetric figure, Δ X is w
11-w
12; In the situation shown in Fig. 4 A and Fig. 4 B2, d is d
2, l is not less than l
2and be not more than the region that formed by the first symmetric figure the first symmetrical axial length along this first symmetric figure, Δ X is w
21-w
22.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if these amendments of the present invention and within modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (9)
1. a testing apparatus, it is characterized in that, comprise: substrate, and be positioned at least one first symmetric figure on the photoetching process layer of substrate, and be positioned at least one second symmetric figure on the photoetching process layer of substrate, described the first symmetric figure is identical with the quantity of described the second symmetric figure, first symmetric figure and second symmetric figure form one group, the first symmetric figure is on the same group positioned at different photoetching process layers from the second symmetric figure, not overlapping each other by the region that or not second symmetric figure in does not on the same group form, by region that the first symmetric figure in does not on the same group form and not overlapping each other by the region that or not second symmetric figure in does not on the same group form,
The region being formed by the second symmetric figure in every group is two parts along the first symmetry axis direction of the first symmetric figure in this group by the region separation being formed by the first symmetric figure in this group, and described two parts have at most one end to be connected in the two ends in the first symmetry axis direction of the first symmetric figure in this group; A symmetry axis of the second symmetric figure in every group is parallel with the first symmetry axis of the first symmetric figure in this group.
2. testing apparatus as claimed in claim 1, is characterized in that, described two parts can not conduct.
3. testing apparatus as claimed in claim 1, it is characterized in that, the end that is not connected in any one part in described two parts is along the first symmetrical axial length of the first symmetric figure perpendicular in this group, and the photoetching process layer at the second symmetric figure place in photoetching process layer and this group at the first symmetric figure place in this group is not more than first threshold along the ratio of the largest tolerable deviation of the alignment of this direction.
4. testing apparatus as claimed in claim 3, it is characterized in that, the degree of depth in the region being formed by the first symmetric figure in every group, is less than the first symmetrical axial length of end along the first symmetric figure perpendicular in this group that is not connected in any one part in described two parts.
5. testing apparatus as claimed in claim 1, it is characterized in that, the overlapping region of the second symmetric figure in the first symmetric figure and this group in every group, along the first symmetrical axial length of the first symmetric figure in this group, is greater than the first symmetrical axial length of end along the first symmetric figure perpendicular in this group that is not connected in any one part in described two parts.
6. testing apparatus as claimed in claim 1, is characterized in that, the region being formed by the first symmetric figure in same group and the region being formed by the second symmetric figure in this group are doped region.
7. testing apparatus as claimed in claim 1, is characterized in that, the region being formed by the first symmetric figure in same group is Implantation region, and the region being formed by the second symmetric figure in this group is to inject barrier zones.
8. right to use requires the arbitrary described testing apparatus of 1-7 to measure a method for deviation of the alignment, it is characterized in that, comprising:
For the first symmetric figure and the second symmetric graph in same group; If two parts that the region separation being formed by this first symmetric figure is obtained are not connected, measure respectively the first symmetrical axial resistance of these two parts along the first symmetric figure in this group;
If two parts that the region separation being formed by this first symmetric figure is obtained are connected along the Zhong You one end, two ends in the first symmetry axis direction of this first symmetric figure, measure between be not connected end and first measurement point of Part I in these two parts along the resistance in the first symmetry axis direction of this first symmetric figure, described the first measurement point is not less than the overlapping region of this first symmetric figure and this second symmetric figure along the length of this direction along this direction with the distance of the end that is not connected in Part I, be not more than the region that formed by this first symmetric figure length along this direction, and measure between be not connected end and second measurement point of two Part II in part along the resistance in the first symmetry axis direction of this first symmetric figure, described the second measurement point is not less than the overlapping region of this first symmetric figure and this second symmetric figure along the length of this direction along this direction with the distance of the end that is not connected in Part II, is not more than the region that formed by this first symmetric figure length along this direction, described the first measurement point along this direction and in Part I not being connected end distance equal described the second measurement point along this direction with in Part II be not connected hold distance,
According to the difference of the resistance measuring, determine that the photoetching process layer at this first symmetric figure place and the photoetching process layer at this second symmetric figure place are along the first symmetrical axial deviation of the alignment perpendicular to this first symmetric figure.
9. method as claimed in claim 8, it is characterized in that, determine that according to following formula the photoetching process layer at this first symmetric figure place and the photoetching process layer at this second symmetric figure place are along the axial deviation of the alignment of the symmetry perpendicular to this first symmetric figure:
Wherein, the ρ resistivity in the region that this first symmetric figure forms of serving as reasons; The serve as reasons degree of depth in the region that this first symmetric figure forms of d; R
1for a part in two parts that the region separation being formed by this first symmetric figure is obtained is along the first symmetrical axial resistance of this first symmetric figure; R
2for another part in described two parts is along the first symmetrical axial resistance of this first symmetric figure; If described two parts are connected, l is not less than the length of the overlapping region of the first symmetric figure and the second symmetric figure along this direction, is not more than the region of this first symmetric figure formation along the length of this direction; If described two parts are not connected, l is that the region of this first symmetric figure formation is along the length of this direction.
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| CN110349874A (en) * | 2018-04-04 | 2019-10-18 | 中芯国际集成电路制造(上海)有限公司 | A kind of detection method of overlay alignment |
| CN116864490A (en) * | 2023-07-04 | 2023-10-10 | 深圳市美浦森半导体有限公司 | Structure and method for monitoring photoetching alignment accuracy of contact hole of trench MOSFET |
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| CN116864490A (en) * | 2023-07-04 | 2023-10-10 | 深圳市美浦森半导体有限公司 | Structure and method for monitoring photoetching alignment accuracy of contact hole of trench MOSFET |
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