CN102043347A - Method and system for detecting and calibrating incident postures of light beams in laser interference nano-lithography - Google Patents
Method and system for detecting and calibrating incident postures of light beams in laser interference nano-lithography Download PDFInfo
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- CN102043347A CN102043347A CN2010105111680A CN201010511168A CN102043347A CN 102043347 A CN102043347 A CN 102043347A CN 2010105111680 A CN2010105111680 A CN 2010105111680A CN 201010511168 A CN201010511168 A CN 201010511168A CN 102043347 A CN102043347 A CN 102043347A
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Abstract
The invention discloses a method for detecting and calibrating incident postures of light beams in laser interference nano-lithography. The invention is characterized in that in the laser interference nano-lithography, a CCD (charge-coupled device) is used for detecting a light spot formed by each laser beam on the surface of a lithography sample and carrying out computer image processing, the incident posture, including the incident position, the incident angle and the space angle, of each laser beam relative to the surface of the lithography sample is determined through the shape, position and other parameters of the light spot, and the error of each incident posture is further determined through the contrast with the ideal incident posture. A regulating device of the system is used for carrying out corresponding calibration on the incident posture of each light beam. In the method, the CCD is used for detecting the light spots, and a computer is used for processing and determining the incident posture of each beam in a plurality of beams of light, thereby precisely detecting the incident position, incident angle and space angle of each laser beam relative to the surface of the lithography sample and enabling the calibration of incident light to ensure that a final lithography pattern and exposure area to be in line with the design. The method is simple in installation/operation, fast in detection/calibration and conducive to application of the laser interference nano-lithography in industrial production.
Description
Technical field
The laser interference nano-photoetching can be widely used in fields, forward position such as information stores, advanced manufacturing, new forms of energy and new material, the present invention detects and calibrates light beam incident attitude in the laser interference nano-photoetching, belongs to the improvement to laser interference nanoimprinting technology.
Technical background
The laser interference nano-photoetching mainly is to interfere at sample surfaces and produce nanostructured pattern with two bundles or multi beam coherent light that laser instrument sends.A laser interference nano-photoetching system comprises: Laser emission, beam shaping, beam splitting, phase control, interference control, Polarization Control, beam detection, sample location and system's control.In the laser interference nano-photoetching, incident light directly determines photoengraving pattern and effective exposure area with respect to incoming position, incident angle and the Space Angle of sample surfaces.Along with the broad research and the development of laser interference nanoimprinting technology in recent years, more and more need high-precision light beam incident attitude detection/calibration steps.In the detection and calibration of traditional light beam incident attitude, just determine incoming position, incident angle and the Space Angle of light beam by range observation, range estimation, precision and efficient are lower; In scanning light beam interference lithography SBIL (Scanning beam interference lithography), use PSD to carry out beam detection as the core devices that detects, detecting has certain limitation; Added some optical device, installation/operation has certain complexity.In the present invention, use the light beam attitude detection of novel detection method to form a closed-loop system with interfering control, sample location as feedback fraction.This system can be automatically, fast the incident attitude of multiple beam is carried out high-precision test and calibration; Install/simple to operate, price is low, helps the application of following laser interference nano-photoetching in commercial production.
Technical Reference:
1.L.F.Johnson，G.W.Kammlott?and?K.A.Ingersoli，“Generation?of?periodic?surface?corrugations”，Applied?Optics，vol.17，no.8，pp?1165-1181，1978.
2.Z.Wang，J.Zhang，Z.Ji，M.Packianather，C.S.Peng，C.Tan，Y.K.Verevkin，S.M.Olaizola，T.Berthou?and?S.Tisserand，“Laser?interference?nanolithography，”Proceedings?of?the?3rd?International?Conference?on?Manufacturing?Engineering，pp929-936，2008.
3.C.G.Chen，R.K.Heilmann，C.Joo，P.T.Konkola，G.S.Pati?and?M.L.Schattenburg，“Beam?alignment?for?scanning?beam?interference?lithography，”Journal?of?Vacuum?Science?&?Technology?B：Microelectronics?and?Nanometer?Structures，vol.20，no.6，pp3071-3074，2002.
Summary of the invention
The object of the invention be to improve in the laser interference nano-photoetching laser beam with respect to the incident precision of sample surface propose to guarantee photoengraving pattern and exposure area to meet design a kind of fast, detection and the calibration steps and the system of the light beam incident attitude of stable, high precision, installation/simple to operate.
Purpose of the present invention realizes by following technical measures:
(1) in the laser interference nano-photoetching, use CCD to detect every Shu Jiguang at the hot spot that the photoetching sample surfaces forms, determine incident attitude and the incident attitude error of every Shu Jiguang by the basic parameter of hot spot with respect to the photoetching sample surfaces.The regulating device of using system is carried out quick, real-time calibration to the incident attitude error, improves the incident precision of every Shu Jiguang with respect to the photoetching sample surfaces, guarantees that photoengraving pattern and exposure area meet design.
(2) this method can be applied in the laser interference nano-photoetching of any incident light number, as two light beams, three light beams, four light beams and five light beams.
(3) this method also can be applied in the laser interference nano-photoetching of two light beams or the auxiliary double exposure of three beam interferences.
(4) when detecting hot spot, also can replace the photoetching sample, directly take laser beam, replace CCD with the photoetching sample again after detection/calibration is finished at the hot spot that the CCD surface forms with CCD.
(5) detection can be used CCD, also can use CMOS and other detection means.
(6) the hot spot figure that collects is carried out Computer Image Processing, can obtain the basic parameter of hot spot accurately, as shape, size, position.
(7) under processing accuracy meets the requirements of prerequisite, the Flame Image Process that computing machine carries out hot spot figure can be selected diverse ways and method combination, as mean filter, binaryzation, edge extracting and least square fitting.
(8) the incident attitude of light beam be can extrapolate by the basic parameter of hot spot, incoming position, incident angle, Space Angle comprised.Can determine the incident attitude error with the desirable incident attitude contrast of design.
(9) make in this way laser interference etching system by laser instrument, beam expander, beam splitter, catoptron, the clamping of polaroid and above-mentioned optical component device and governor motion, the sample detent mechanism, CCD forms, and can change incident angle, Space Angle, the incoming position of every Shu Jiguang with respect to the photoetching sample surfaces by changing the relative putting position of optical component.
(10) change the relative putting position of optical component, both can pass through motorized adjustment, use piezoelectric ceramics, electricity to rotate mirror holder etc.; Also can pass through manual adjustments, use the translation micropositioning stage, rotate micropositioning stage etc.
(11) to the calibration process of every Shu Jiguang with respect to the incident attitude of photoetching sample: aligned spaces angle, calibration incident angle, calibration incoming position, this process meets the demands up to the incident precision repeatedly.
(12) also can assist realization to the incident angle of laser beam, the calibration of Space Angle by the rotation of sample worktable; Calibration to the laser beam incident position also can be assisted realization by the translation of sample worktable.
The advantage that the present invention compares with existing method:
By CCD collection, Flame Image Process, data analysis, determine the laser beam incident attitude, testing process need not to add optical component, simple to operate, quick, accurate; Can eliminate any known error by the adjusting that changes relative putting position of optical component and sample worktable, calibration process is simple, quick, comprehensive.In the laser interference nano-photoetching system, use this method, installation is simple, price is low, the use of electric device and digitial controller can allow the total system closed loop, finish the detection/calibration that needs in the actual photoetching automatically, help the application of laser interference nano-photoetching in commercial production.
Description of drawings
Figure 1 shows that the four beam laser interference nano etching system synoptic diagram that use the inventive method detection mode one.
Figure 2 shows that the four beam laser interference nano etching system synoptic diagram that use the inventive method detection mode two.
Figure 3 shows that the incident synoptic diagram of single beam on sample surface.
Figure 4 shows that the inventive method detection mode one detected single beam hot spot figure and processing result image.
Figure 5 shows that the inventive method detection mode two detected single beam hot spot figure and processing result images.
Figure 6 shows that the inventive method detection mode one detected twin-beam hot spot figure in the photoetching of double light beam laser interference nano.
Figure 7 shows that the inventive method detection mode two detected twin-beam hot spot figure in the photoetching of double light beam laser interference nano.
Figure 8 shows that the inventive method detection mode one detected bar graph in the photoetching of double light beam laser interference nano.
Figure 9 shows that the inventive method detection mode two detected bar graphs in the photoetching of double light beam laser interference nano.
Embodiment
The present invention is described further below in conjunction with accompanying drawing, Figure 1 shows that to use four beam laser interference nano etching systems of the inventive method detection mode one to comprise: laser instrument 1, beam expanding lens 2, colimated light system 3, catoptron 4, polarizer 5, beam splitting and dioptric system 6, CCD 7, computing machine 8.The laser beam of being sent by laser instrument 1 is behind beam expanding lens 2 and colimated light system 3, the mirror 4 that the is reflected light path of turning back, by polarizer 5 light beam is become linearly polarized light, earlier laser beam is divided into a plurality of coherent light beams by beam splitting and dioptric system 6 again, again each light path of multi-beam is controlled respectively, they are shone on the surface of CCD 7 with certain incident angle.Every bundle incident light is detected respectively/calibrates, detect/calibrate when a branch of, other incident light is blocked.Detection/calibration process: CCD 7 gathers hot spot figure, 8 couples of hot spot figure carry out filtering, binaryzation, edge extracting, least square fitting by computing machine, obtain the basic parameter of hot spot sub-elliptical, derive incoming position, incident angle, the Space Angle of incident light with respect to the photoetching sample surfaces.Can obtain the incident attitude error with the ideal situation comparison, error is fed back to the incident end, by finish the calibration to error with the relative putting position of optical device in displacement of the lines or angular displacement control system conversion beam splitting and the dioptric system 6.Calibration sequence: Space Angle, incident angle, incoming position, all to detect again after per step, regulate again, after finishing, detection/calibration needs to replace CCD 7 with the photoetching sample.
Figure 2 shows that the four beam laser interference nano etching systems that use the inventive method detection mode two, compare with detection mode one, difference is: light beam directly is incident on the photoetching sample 9, the CCD 10 that will add camera lens is installed in the appropriate location and gathers the hot spot figure that light beam forms in real time on the photoetching sample surfaces, and other parts are all identical with detection mode one.The advantage of this detection mode is can directly carry out photoetching after the detection/calibration, the error that may occur when having avoided the photoetching sample to replace CCD.
Shown in Figure 3, the basic parameter that obtains ellipse light spot by hot spot figure can be derived the incident attitude of light beam 11: incident angle 12=arcos (ellipse short shaft length/transverse length); The oval home position of incoming position 13=; Space Angle 14 is by the deflection decision of ellipse.
Figure 4 shows that the single beam hot spot figure that the inventive method detection mode one collects reaches the result of hot spot figure being carried out mean filter, binaryzation, edge extracting, least square fitting.
Figure 5 shows that the single beam hot spot figure that the inventive method detection mode two collects reaches the result of hot spot figure being carried out mean filter, binaryzation, edge extracting, least square fitting.
Fig. 6 uses the inventive method detection mode for the moment in the photoetching of double light beam laser interference nano, the twin-beam hot spot figure that collects.
Fig. 7 is when using the inventive method detection mode two in the photoetching of double light beam laser interference nano, the twin-beam hot spot figure that collects.
Shown in Figure 8, in the photoetching of double light beam laser interference nano, use the inventive method detection mode for the moment, by regulating the clear interference fringe that beam intensity collects, the about 129.7 μ m of fringe period.Streak parameters has been verified the high measurement accuracy of the inventive method detection mode one.
Shown in Figure 9, when in the photoetching of double light beam laser interference nano, using the inventive method detection mode two, use CCD to replace the interference fringe that the photoetching sample collecting arrives, the about 56.4 μ m of fringe period.Streak parameters has been verified the high measurement accuracy of the inventive method detection mode two.
Claims (10)
- One kind in the laser interference nano-photoetching to light beam incident attitude detection and Calibration Method, it is characterized in that: in the laser interference nano-photoetching, use CCD to detect every Shu Jiguang, determine incident attitude and the incident attitude error of every Shu Jiguang with respect to the photoetching sample surfaces by the basic parameter of hot spot at the hot spot that the photoetching sample surfaces forms.The regulating device of using system is carried out quick, real-time calibration to the incident attitude error, improves the incident precision of every Shu Jiguang with respect to the photoetching sample surfaces, guarantees that photoengraving pattern and exposure area meet design.
- 2. according to claim 1 in the laser interference nano-photoetching to light beam incident attitude detection and Calibration Method, it is characterized in that: this method can be applied in the laser interference nano-photoetching of any incident light number, as two light beams, three light beams, four light beams and five light beams.
- According to claim 1 and 2 described in the laser interference nano-photoetching to light beam incident attitude detection and Calibration Method, it is characterized in that: this method also can be applied in the laser interference nano-photoetching of the auxiliary double exposure of two light beams or three beam interferences.
- According to claim 1-3 described in the laser interference nano-photoetching to light beam incident attitude detection and Calibration Method, it is characterized in that: when detecting hot spot, also can replace the photoetching sample with CCD, directly take laser beam at the hot spot that the CCD surface forms, replace CCD with the photoetching sample again after detection/calibration is finished.
- According to claim 1-4 described in the laser interference nano-photoetching to light beam incident attitude detection and Calibration Method, it is characterized in that: detection can be used CCD, also can use CMOS and other detection means.
- According to claim 1-5 described in the laser interference nano-photoetching to light beam incident attitude detection and Calibration Method, it is characterized in that: the hot spot figure that collects is carried out Computer Image Processing, can obtain the basic parameter of hot spot accurately, as shape, size and location.Under processing accuracy met the requirements of prerequisite, the Flame Image Process that computing machine carries out hot spot figure can be selected diverse ways and method combination, as mean filter, binaryzation, edge extracting and least square fitting.
- According to claim 1-6 described in the laser interference nano-photoetching to light beam incident attitude detection and calibration steps, it is characterized in that: can calculate the incident attitude of light beam by the basic parameter of hot spot, comprise incoming position, incident angle and Space Angle.Can determine the incident attitude error with the desirable incident attitude contrast of design.
- According to claim 1-7 described in the laser interference nano-photoetching to light beam incident attitude detection and calibration steps, make laser interference etching system in this way, it is characterized in that: this system is made up of clamping and governor motion, sample detent mechanism and the CCD of laser instrument, beam expander, beam splitter, catoptron, polaroid and above-mentioned optical component device, can finish the calibration of incoming position, incident angle and Space Angle to every Shu Jiguang by changing the relative putting position of optical component.
- 9. laser interference nano-photoetching system according to claim 8, this system changes the relative putting position of optical component and is characterised in that: change the relative putting position of optical component, both can pass through motorized adjustment, and use piezoelectric ceramics, electricity to rotate mirror holder etc.; Also can pass through manual adjustments, use the translation micropositioning stage, rotate micropositioning stage etc.
- According to Claim 8 with 9 described laser interference nano-photoetching systems, this system is characterised in that light beam incident attitude calibration: also can assist realization by the rotation of sample worktable to the incident angle of laser beam and the calibration of Space Angle; Calibration to the laser beam incident position also can be assisted realization by the translation of sample worktable.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102269936A (en) * | 2011-06-01 | 2011-12-07 | 长春理工大学 | Method and system for simulating moth compound eye optical antireflection structure pattern |
| CN105446089A (en) * | 2015-12-29 | 2016-03-30 | 中国科学技术大学 | Multi-beam interference lithography method combining digital micro-mirror device and multifaceted prism |
| CN109822231A (en) * | 2019-02-15 | 2019-05-31 | 英特尔产品（成都）有限公司 | Method and apparatus of the detection for the quality of the laser beam of Wafer Dicing |
| WO2024050877A1 (en) * | 2022-09-06 | 2024-03-14 | 台湾积体电路制造股份有限公司 | Laser angle assisted adjustment device for manufacturing semiconductor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005353667A (en) * | 2004-06-08 | 2005-12-22 | Tokyo Seimitsu Co Ltd | Electron beam device and calibration method of incident angle of electron beam |
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2010
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005353667A (en) * | 2004-06-08 | 2005-12-22 | Tokyo Seimitsu Co Ltd | Electron beam device and calibration method of incident angle of electron beam |
Non-Patent Citations (1)
| Title |
|---|
| CARL G.CHEN ET.AL: "Beam alignment for scanning beam interference lithography", 《JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102269936A (en) * | 2011-06-01 | 2011-12-07 | 长春理工大学 | Method and system for simulating moth compound eye optical antireflection structure pattern |
| CN102269936B (en) * | 2011-06-01 | 2013-07-10 | 长春理工大学 | Method and system for simulating moth compound eye optical antireflection structure pattern |
| CN105446089A (en) * | 2015-12-29 | 2016-03-30 | 中国科学技术大学 | Multi-beam interference lithography method combining digital micro-mirror device and multifaceted prism |
| CN109822231A (en) * | 2019-02-15 | 2019-05-31 | 英特尔产品（成都）有限公司 | Method and apparatus of the detection for the quality of the laser beam of Wafer Dicing |
| WO2024050877A1 (en) * | 2022-09-06 | 2024-03-14 | 台湾积体电路制造股份有限公司 | Laser angle assisted adjustment device for manufacturing semiconductor |
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Inventor after: Wang Zuobin Inventor after: Song Hao Inventor after: Xu Jia Inventor after: Weng Zhankun Inventor after: Song Zhengxun Inventor after: Hu Zhen Inventor after: Liu Lanjiao Inventor before: Song Hao Inventor before: Wang Zuobin Inventor before: Xu Jia Inventor before: Weng Zhankun Inventor before: Song Zhengxun Inventor before: Hu Zhen Inventor before: Liu Lanjiao |
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