CN102034881A - Solar cell and manufacturing method thereof - Google Patents
Solar cell and manufacturing method thereof Download PDFInfo
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- CN102034881A CN102034881A CN200910177818XA CN200910177818A CN102034881A CN 102034881 A CN102034881 A CN 102034881A CN 200910177818X A CN200910177818X A CN 200910177818XA CN 200910177818 A CN200910177818 A CN 200910177818A CN 102034881 A CN102034881 A CN 102034881A
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- solar cell
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- indium
- making
- conductive layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar cell and a manufacturing method thereof. The solar cell is manufactured by the following steps of: forming a peak-valley wavy active surface on the surface of a substrate, and forming a conductive layer, a copper indium gallium selenide (CIGS) layer and a transparent conductive layer in turn on the surface of the active surface, wherein the peak-valley wavy active surface can be completed by an invasive forming means, so that the conductive layer, the copper indium gallium selenide (CIGS) layer and the like subsequently formed on the active surface are wavy along the peaks and valleys of the active surface; therefore, the photo receiving area and reaction area can be increased, and the conversion rate of converting the optical energy into electric energy is improved.
Description
Technical field
The present invention relates to solar cell, refer to a kind of Copper Indium Gallium Selenide (Copper Indium Gallium Diselenide, CIGS) solar cell of quaternary compound structure and method for making thereof of containing especially.
Background technology
Present existing most the kind in the solar cell, the solar cell that contains Copper Indium Gallium Selenide (CIGS) quaternary compound is a kind of solar cell with high conversion efficiency and low manufacturing cost, and this CIGS solar cell also has good product stability under outdoor environment, for having one of development potentiality in the existing solar cell.
The aforementioned solar cell that contains Copper Indium Gallium Selenide (CIGS) quaternary compound is formed structure, it mainly is be shaped in regular turn on a substrate molybdenum (Mo) layer, a Copper Indium Gallium Selenide (CIGS) layer and a transparency conducting layer, wherein utilize the absorbed layer of cigs layer as light, make rayed on this solar cell, after the energy of light is absorbed by cigs layer, and be electric energy with the power conversion of light.
But the energy conversion rate of existing C IGS solar cell is about about 14% at present, with desirable transfer ratio one section gap is arranged still, therefore how to improve the energy conversion rate of CIGS solar cell, promote its industrial utilization, be important problem in these solar cell research and development.
Summary of the invention
Main purpose of the present invention is to provide a kind of solar cell and method for making thereof, and uncommon design whereby increases and receives light and response area, and then promotes the transfer ratio that light is converted to electric energy.
For reaching aforementioned purpose, the designed solar cell of the present invention comprises:
One substrate, its upper surface forms the contoured non-flat forms active surface of continuity peak valley;
One conductive layer forms on this substrate non-flat forms active surface, and forms the contoured film of continuity peak valley;
One copper-indium-gallium-selenium compound (CIGS) layer forms in the contoured conductive layer upper surface of this continuity peak valley, forms the contoured film of continuity peak valley; And
One transparency conducting layer forms in this copper-indium-gallium-selenium compound (CIGS) layer upper surface.
The method for making of the solar cell that the present invention is designed comprises:
One substrate is provided, and definition has a upper surface on the described substrate;
Make this upper surface of base plate form the rough surface that comprises a plurality of potholes with the surface roughening means;
The rough surface that makes this substrate have a plurality of potholes with shape means forms mild peak valley fluctuating shape active surface;
In this substrate active surface conductive layer that is shaped;
In a be shaped copper-indium-gallium-selenium compound (CIGS) layer of this conductive layer upper surface; And
In this copper-indium-gallium-selenium compound (CIGS) layer upper surface transparency conducting layer that is shaped.
The present invention is by the structure and the method for making design thereof of aforementioned solar cell, its characteristics are, utilize the surface roughening structure design of substrate active surface, make the conductive layer (molybdenum that forms in this substrate active surface in regular turn, Mo), cigs layer and transparent electric conductive layer etc. form the contoured convex-concave surface of continuous peak valley because of the upper surface along this substrate roughening structure, whereby, make this solar cell receive the light time, can utilize its convex-concave surface to increase light in the refraction number of times on its surface, reduce the reflection of light, and then the absorptivity of increase light, the response area of cigs layer is strengthened, and then promote this solar cell light energy is converted to the transfer ratio of electric energy, increase the producible magnitude of current of solar cell.
Description of drawings
Fig. 1 is the floor map of a specific embodiment of solar cell structure of the present invention.
Fig. 2 A～Fig. 2 C is in the solar cell method for making of the present invention, and the glass substrate upper surface forms the schematic flow sheet of peak valley fluctuating shape active surface.
Fig. 3 A～Fig. 3 D is in the solar cell method for making of the present invention, in regular turn in the schematic flow sheet of glass substrate active surface shaping conductive layer, copper-indium-gallium-selenium compound (CIGS) layer and transparency conducting layer.
Wherein, description of reference numerals is as follows:
10 substrates, 101 active surfaces
102 potholes, 11 conductive layers
12 copper-indium-gallium-selenium compound layers, 13 transparency conducting layer
20 shieldings, 201 perforation
Embodiment
The solar cell that the present invention is designed, its structure comprise a substrate 10, a conductive layer 11, a copper-indium-gallium-selenium compound (CIGS) layer 12 and one transparency conducting layer 13, wherein:
Described substrate 10 can be selected the plate body of glass, plastic material for use, its upper surface forms the contoured non-flat forms active surface 101 of continuity peak valley, in this specific embodiment, these substrate 10 upper surfaces form a plurality of potholes 102 and form this non-flat forms active surface 101, and described pothole 102 can be the pothole of shapes such as V-shaped groove shape, inverted cone-shaped, chamfering taper.
Described conductive layer 11 can be metal molybdenum (Mo) and forms in this substrate 10 to have on the non-flat forms active surface 101 of a plurality of potholes, and forms the contoured film of continuity peak valley.
Described copper-indium-gallium-selenium compound (CIGS) layer 12 is copper indium callium diselenide (CIGS) (CuIn
1-xGa
xSe
2) compound forms in contoured conductive layer 11 upper surfaces of this continuity peak valley, also forms the contoured film of continuity peak valley.
Described transparency conducting layer 13 is that indium tin oxide (ITO), zinc oxide material formings such as (ZnO) are in this copper-indium-gallium-selenium compound (CIGS) layer 12 upper surface.
For realizing the structure of aforementioned solar cell, shown in Fig. 2 A～Fig. 2 C and Fig. 3 A～Fig. 3 D, the designed solar cell method for making of the present invention comprises following steps:
One substrate 10 is provided, definition one upper surface on it, described substrate 10 can be selected glass substrate (shown in Fig. 2 A) such as (or plastic bases) for use, discloses in this specific embodiment and uses glass substrate;
Make the upper surface of this substrate 10 form the rough surface that comprises a plurality of potholes with the surface roughening means, described surface roughening means are to use intrusive mood shaping means, as: the sandblast means, the laser means, etching or other are enough to make substrate 10 upper surfaces to produce the shaping manufacturing process of a plurality of potholes, shown in Fig. 2 B, it discloses the sandblast means of using, and cooperate one group to have a plurality of shieldings 20 that are the perforation 201 of patterned arrangement, in order to get a plurality of potholes in this each pre-position of substrate 10 upper surfaces, make these substrate 10 upper surfaces form the non-planar surface that peak valley continues and arranges, in addition, the present invention also can use the laser means to get the pothole of desired depth in substrate 10 each pre-position under computer control, make these substrate 10 upper surfaces form this rough surface, wherein when the thickness of slab of substrate 10 was 3mm, the pothole degree of depth that this substrate 10 is got was 1.4mm～1.6mm, the pothole width is that 1.6mm～1.8mm is good;
The non-planar surface that makes this substrate 10 have a plurality of potholes with shape means further forms mild peak valley fluctuating shape active surface 101, in this specific embodiment, shown in Fig. 2 A～Fig. 2 C, be to use glass substrate 10, and with the sandblast means rough surface that on this glass substrate 10, is shaped, so can further use hydrofluoric acid (HF) to remove this glass substrate 10, make it form mild peak valley fluctuating active surface 101 via more sharp-pointed protuberance in the rough surface of sandblast shaping;
In this substrate 10 active surfaces 101 shapings one conductive layer 11, shown in Fig. 3 A～Fig. 3 B, described conductive layer can be selected metal molybdenum (Mo) for use, and by form in the active surface of this substrate 10 as methods such as sputter means;
In these conductive layer 11 a upper surfaces copper-indium-gallium-selenium compound (CIGS) layer 12 that is shaped, shown in Fig. 3 C, as light absorbing zone, described copper-indium-gallium-selenium compound (CIGS) layer 12 can be selected vapour deposition method, printing means for use ... Deng copper-indium-gallium-selenium compound (CIGS) being formed in this conductive layer 11 upper surfaces; And
In this copper-indium-gallium-selenium compound (CIGS) layer 12 upper surface transparency conducting layer 13 that is shaped, shown in Fig. 3 D, described transparency conducting layer 13 can be selected indium tin oxide (ITO), zinc oxide materials such as (ZnO) for use, and is shaped with deposition means such as sputtering methods.
In the method for making of the present invention, still the cutting step that comprises a patterning, it utilizes cutting means generation patterning and self-induced transparency conductive layer 13 upper surfaces to extend downward the cutting seam of substrate 10 after the step that transparency conducting layer 13 is shaped, and makes this solar cell form a plurality of unit on single substrate.
Via in the above stated specification as can be known, the present invention utilizes its upper surface of base plate to form the design of roughening structure, making continues forms in the conductive layer (molybdenum of this upper surface of base plate, Mo), cigs layer and transparent electric conductive layer etc. all form the contoured convex-concave surface of continuous peak valley along the upper surface of this substrate roughening structure, so, in the time of can allowing this solar cell absorb sunlight, can utilize its convex-concave surface to increase light in the refraction number of times on its surface, reduce sun reflection of light, increase is to the absorptivity of sunlight, the more important thing is, by this concavo-convex design, the response area of cigs layer is strengthened, promoting this solar cell is the transfer ratio of electric energy to transform light energy, increase the producible magnitude of current of solar cell, hereat, the design that the present invention innovates whereby, the industrial utilization of promoting this solar cell.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (16)
1. a solar cell is characterized in that, comprises:
One substrate, its upper surface forms the contoured non-planar surface of continuity peak valley;
One conductive layer forms on this substrate non-flat forms upper surface, and forms the contoured film of continuity peak valley;
One copper-indium-gallium-selenium compound layer forms in the contoured conductive layer upper surface of this continuity peak valley, forms the contoured film of continuity peak valley; And
One transparency conducting layer forms in this copper-indium-gallium-selenium compound layer upper surface.
2. solar cell as claimed in claim 1 is characterized in that, the non-planar surface of this substrate is formed by including a plurality of potholes.
3. solar cell as claimed in claim 2 is characterized in that, described pothole is a V-shaped groove.
4. solar cell as claimed in claim 2 is characterized in that, described pothole is an inverted cone-shaped.
5. solar cell as claimed in claim 2 is characterized in that, described pothole is the chamfering taper.
6. as any described solar cell in the claim 1 to 5, it is characterized in that described substrate is a glass substrate, this conductive layer is a molybdenum film, and this transparency conducting layer is an indium and tin oxide film.
7. a solar cell method for making is characterized in that, comprises:
One substrate is provided, and definition has a upper surface on the described substrate;
Make this upper surface of base plate form the contoured surface that comprises a plurality of potholes with the surface roughening means;
The rough surface that makes this substrate have a plurality of potholes with shape means forms mild peak valley fluctuating shape active surface;
In this substrate active surface conductive layer that is shaped;
In this conductive layer upper surface copper-indium-gallium-selenium compound layer that is shaped; And
In this copper-indium-gallium-selenium compound layer upper surface transparency conducting layer that is shaped.
8. solar cell method for making as claimed in claim 7 is characterized in that, described surface roughening is to be intrusive mood shaping means.
9. solar cell method for making as claimed in claim 8 is characterized in that, described intrusive mood shaping means are to be the shaping manufacturing process of sandblast means in conjunction with the shielding of one group of perforation with patterned arrangement.
10. solar cell method for making as claimed in claim 8 is characterized in that, described intrusive mood shaping means are the laser processing means.
11. any described solar cell method for making as claim 7 to 9, it is characterized in that, described substrate uses glass substrate, and this shape means uses hydrofluoric acid to remove more sharp-pointed protuberance in this glass substrate rough surface, makes it form mild peak valley contoured surface.
12. solar cell method for making as claimed in claim 11 is characterized in that, described conductive layer selects for use metal molybdenum to form in the active surface of this substrate by the sputter means.
13. solar cell method for making as claimed in claim 11 is characterized in that, described copper-indium-gallium-selenium compound layer selects for use vapour deposition method to form in this conductive layer upper surface.
14. solar cell method for making as claimed in claim 12 is characterized in that, described copper-indium-gallium-selenium compound layer selects for use vapour deposition method to form in this conductive layer upper surface.
15. solar cell method for making as claimed in claim 11 is characterized in that, described transparency conducting layer selects for use indium tin oxide to form in this copper-indium-gallium-selenium compound layer with sputtering method deposition means.
16. solar cell method for making as claimed in claim 14 is characterized in that, described transparency conducting layer selects for use indium tin oxide to form in this copper-indium-gallium-selenium compound layer with sputtering method deposition means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910177818XA CN102034881A (en) | 2009-09-25 | 2009-09-25 | Solar cell and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910177818XA CN102034881A (en) | 2009-09-25 | 2009-09-25 | Solar cell and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102034881A true CN102034881A (en) | 2011-04-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910177818XA Pending CN102034881A (en) | 2009-09-25 | 2009-09-25 | Solar cell and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106068247A (en) * | 2014-02-24 | 2016-11-02 | 皮尔金顿集团有限公司 | The glass pane of coating |
-
2009
- 2009-09-25 CN CN200910177818XA patent/CN102034881A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106068247A (en) * | 2014-02-24 | 2016-11-02 | 皮尔金顿集团有限公司 | The glass pane of coating |
| US10550032B2 (en) | 2014-02-24 | 2020-02-04 | Pilkington Group Limited | Coated glazing |
| CN106068247B (en) * | 2014-02-24 | 2020-03-10 | 皮尔金顿集团有限公司 | Coated glazing |
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Application publication date: 20110427 |