CN102201497A - Thin-film solar energy cell and manufacturing method thereof - Google Patents
Thin-film solar energy cell and manufacturing method thereof Download PDFInfo
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- CN102201497A CN102201497A CN2011101198213A CN201110119821A CN102201497A CN 102201497 A CN102201497 A CN 102201497A CN 2011101198213 A CN2011101198213 A CN 2011101198213A CN 201110119821 A CN201110119821 A CN 201110119821A CN 102201497 A CN102201497 A CN 102201497A
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention provides a manufacturing method of a thin-film solar energy cell, which comprises the following steps of: forming a front electrode on any surface of patterned glass, wherein the patterned glass serves as a substrate, and a light trapping structure is arranged on one surface of the patterned glass; and forming other structures of the thin-film solar energy cell. Correspondingly, the invention also provides the thin-film solar energy cell. When the manufacturing method of the thin-film solar energy cell provided by the invention is adopted, problems in the prior art are effectively solved, the light trapping effect of the thin-film solar energy cell is enhanced, the production process of the thin-film solar energy cell can be simplified, raw materials can be saved, and the contradiction of the mutual restriction between electrical properties and optical properties is alleviated when a ZnO front electrode is prepared through a LPCVD (Low Pressure Chemical Vapor Deposition) method. The thin-film solar energy cell provided by the invention has the advantages of increased short-circuit current density, increased photoelectric conversion efficiency and enhanced working performances.
Description
Technical field
The present invention relates to solar cell and make the field, relate in particular to the method for a kind of thin-film solar cells and manufacturing thereof.
Background technology
The stability of amorphous silicon top battery depends primarily on the thickness of amorphous silicon top battery, and its top cell thickness is more little, and the stability of entire cell is also good more; The thickness of battery is big at the bottom of the microcrystal silicon, deposition rate is low, and light trapping structure can effectively reduce end cell thickness, enhances productivity, and reduces production costs; For the microcrystal silicon material of non-direct band gap, in thin as far as possible material, absorb sunlight as much as possible, light trapping structure also is absolutely necessary.Light trapping structure strengthens the purpose that absorbs sunlight to reach, thereby reduces the thickness of battery intrinsic layer by increasing the light path of incident light in the intrinsic absorbed layer, improves short-circuit current density, is very important for the performance that promotes laminated cell.
In the process of this laminated cell of production thin-film solar cells, can adopt the preceding glass sheet of plate glass, and select the material of transparent conductive oxide as preceding electrode, for example ZnO for use as hull cell.
Usually, if use sputtering method growth ZnO nesa coating with as preceding electrode, this ZnO nesa coating does not have light trapping structure, needs wet this ZnO nesa coating of etching of follow-up hydrochloric acid solution to form usually and has certain matte light trapping structure that falls into optical property.If wish to reach 20% mist degree, need on this ZnO nesa coating, etch away the thick ZnO material of about 20nm.Preparation method's complex process of this making light trapping structure, and waste raw material, be unfavorable for saving cost and simplify production procedure.
If use low pressure chemical vapor deposition (LPCVD) method to form described ZnO nesa coating, in this deposition process, along with the prolongation of sedimentation time, the thickness of ZnO film increases, and on the one hand, the square resistance Rsq of ZnO film reduces, conductive characteristic improves, and it is big that mist degree becomes; On the other hand, along with the increase of ZnO film thickness, the transmitance of sunlight reduces, the optical characteristics variation.If increase B
2H
6Doping, on the one hand the square resistance Rsq of ZnO film reduces, conductive characteristic improves; On the other hand, charge carrier absorbs and strengthens in the ZnO film, and the near-infrared transmitance reduces, the optical characteristics variation, and mist degree reduces simultaneously.Therefore the mutual restriction between electrology characteristic and the optical characteristics is the birth defects that LPCVD prepares the ZnO nesa coating.
Seek simple and effective more sunken optical tech to overcome above-mentioned defective, become the photovoltaic field focus of researcher's concern in the industry.
Summary of the invention
The object of the present invention is to provide a kind of thin-film solar cells and manufacture method thereof, simplify the manufacturing process of thin-film solar cells, and improve the service behaviour of thin-film solar cells, simple and effective more sunken optical tech is provided.
At first, the invention provides a kind of manufacture method of thin-film solar cells, this method comprises:
As substrate, the one side of this pattern glass has light trapping structure with pattern glass;
Electrode before arbitrary formation of described pattern glass;
Form other structures of thin-film solar cells.
Correspondingly, the present invention also provides a kind of thin-film solar cells, and this battery comprises:
The pattern glass substrate, the one side of this pattern glass substrate has light trapping structure;
Before electrode, be formed on arbitrary of described pattern glass substrate;
Light energy conversion layer is formed on the described preceding electrode;
Back electrode is formed on the described light energy conversion layer.
The advantage of the manufacture method of thin-film solar cells provided by the invention is, uses the preceding glass sheet of pattern glass as thin-film solar cells in the manufacture process, has simplified the manufacturing process of hull cell, has saved raw material.The thin-film solar cells that forms according to method manufacturing provided by the invention as preceding glass sheet, has improved the short-circuit current density and the photoelectric conversion efficiency of battery with above-mentioned pattern glass.
Description of drawings
By reading the detailed description of doing with reference to the following drawings that non-limiting example is done, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 is the flow chart of a kind of embodiment of membrane according to the invention method for manufacturing solar battery;
Fig. 2 is the sectional structure schematic diagram that the pattern glass substrate that provides in the process of thin-film solar cells is provided according to the method shown in Fig. 1;
Fig. 3 is the structural representation of a kind of embodiment of the light trapping structure 110 shown in Fig. 2;
Fig. 4 is the micro-enlarged drawing of the light trapping structure 110 shown in Fig. 3;
Fig. 5 is the sectional structure schematic diagram according to the thin-film solar cells of the formation of the method manufacturing shown in Fig. 1;
Fig. 6 is the surperficial micro-enlarged drawing of a kind of embodiment of the preceding electrode 200 in the hull cell shown in Fig. 5.
Same or analogous Reference numeral is represented same or analogous parts in the accompanying drawing.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, embodiments of the invention are described in detail below in conjunction with accompanying drawing.
Disclosing hereinafter provides many different embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter parts and the setting to specific examples is described.Certainly, they only are example, and purpose does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and purpose clearly, itself not indicate the relation between various embodiment that discuss of institute and/or the setting.In addition, various specific technology and the examples of material that the invention provides, but those of ordinary skills can recognize the use of the applicability and/or the other materials of other technologies.In addition, first feature described below second feature it " on " structure can comprise that first and second features form the embodiment of direct contact, can comprise that also additional features is formed on the embodiment between first and second features, such first and second features may not be direct contacts.Layer structural representation according to the embodiment of the invention shown in the drawings.These figure draw in proportion, wherein for purpose clearly, have amplified some details, and may omit some details.The shape of the various zones shown in the figure, layer and the relative size between them, position relation only are exemplary, and do not draw according to actual ratio, in addition in practice may be because manufacturing tolerance or technical limitations and deviation to some extent, and those skilled in the art according to reality required can design in addition have difformity, the regions/layers of size, relative position.
Please refer to Fig. 1, Fig. 1 is the flow chart of a kind of embodiment of membrane according to the invention method for manufacturing solar battery, and this method comprises:
Step S101, as substrate, the one side of this pattern glass has light trapping structure with pattern glass;
Step S102, electrode before arbitrary formation of described pattern glass;
Step S103, other structures of formation thin-film solar cells.
Particularly, in the technology of existing manufacturing thin-film solar cells, with plate glass as preceding glass sheet (being described substrate), electrode before the formation on glass of this header board then, if the mist degree of electrode before needing further to improve need further be processed the surface texture of preceding electrode and wait with the formation light trapping structure.In this embodiment, directly adopted pattern glass as preceding glass sheet (being described substrate), utilize embossing decorative pattern on the pattern glass as light trapping structure, reaching increases the incident light light path, strengthens the purpose that absorbs sunlight.
At first with reference to figure 2, Fig. 2 is the sectional structure schematic diagram that a kind of embodiment of the pattern glass substrate that provides in the process of thin-film solar cells is provided according to the method shown in Fig. 1, wherein the one side of pattern glass substrate 100 has formed decorative pattern 110, use the light trapping structure of above-mentioned decorative pattern 110 in the present embodiment, so decorative pattern 110 is a light trapping structure 110 as thin-film solar cells.Method at formation light trapping structure 110 on glass has a variety of, for example mould rolls and chemical etching etc., light trapping structure 110 rolls glass surface by knurling mould and forms in the present embodiment, preferably, described knurling mould rolls the non-tin face of glass, described knurling mould can be a roll, and the non-tin face that is used to roll glass is with formation light trapping structure 110, so light trapping structure is formed on the non-tin face of glass.
Need to prove, according to the difference of knurling mould, can form the light trapping structure 110 of multiple shape, preferably, can form the pit arranged according to certain rule on the surface of glass as light trapping structure 110, usually these pits all have certain geometry; To make the size of these pits less in addition, just can reach the purpose that falls into light.Please refer to Fig. 3, Fig. 3 is the structural representation of a kind of embodiment of light trapping structure 110, as shown in the figure in the present embodiment, light trapping structure 110 is the cellular surface that closely is arranged in glass by some orthohexagonal pits 111 and forms, and the length of side of each orthohexagonal pit 111 is 0.3mm.Further, please refer to Fig. 4, Fig. 4 is the micro-enlarged drawing of the light trapping structure 110 shown in Fig. 3, figure 4 illustrates some orthohexagonal pits 111, and its arrangement mode is cellular, and Fig. 4 illustrates the structure of light trapping structure 110 more intuitively.Need explanation to be, in reality processing, because technological level restriction and error, the shape of described orthohexagonal pit 111 is not strictly to be regular hexagon, and the shape of this pit 111 and orthohexagonal deviation get final product in the scope that technology allows.
After forming this pattern glass that has light trapping structure 110 100, its preceding glass sheet as thin-film solar cells is further processed.Alternatively, the one side that both pattern glass 100 can have been had a light trapping structure 110 is advanced the light face as thin-film solar cells, also pattern glass 100 smooth one sides can be advanced the light face as thin-film solar cells.Please refer to Fig. 5, Fig. 5 is the sectional structure schematic diagram according to the thin-film solar cells of the formation of the method manufacturing shown in Fig. 1, in the embodiment show in figure 5 that pattern glass 100 is smooth one side is advanced the light face as thin-film solar cells, and electrode 200 before on the one side that has light trapping structure 110, forming.Usually, preceding electrode 200 is that (Transparent Contact Oxide, no matter electrode 200 is the generating efficiency that optical property or electrical properties all can directly influence thin-film solar cells to transparent conductive oxide before TCO) the preceding electrode 200, TCO.
Preferably, available ZnO is as the material of preceding electrode 200, and therefore preceding electrode 200 comes down to ZnO film.Forming before the ZnO method of electrode 200 on light trapping structure 110 has a variety ofly, especially, can take following two kinds of methods:
The first, use sputtering method, growth ZnO is with electrode before forming 200 on light trapping structure 110.The surface of the film of the preceding electrode 200 of use sputtering method formation ZnO is mirror surface structure normally, if this ZnO film is formed on the plate glass, then mist degree is undesirable.In the present embodiment, the film of electrode 200 is formed on the light trapping structure 110 before this ZnO, therefore the surface that electrode 200 contacts with light trapping structure 110 before the ZnO also has sunken light action, need not again electrode 200 before the sputtering method formation ZnO to be carried out chemical etching and can satisfy the mist degree requirement; Because the existence of light trapping structure 110, the surface that preceding electrode 200 contacts with light trapping structure 110 can not be mirror shape, but have up-and-down shape, therefore the effective area of preceding in fact electrode 200 increases, and helps the service behaviour of enhanced film solar cell.
The second, use the LPCVD method, growth ZnO is with electrode before forming 200 on light trapping structure 110.Because the special process of LPCVD, the film that adopts the LPCVD method to form the preceding electrode 200 of ZnO has the matte light trapping structure, please refer to Fig. 6, Fig. 6 is the surperficial micro-enlarged drawing of a kind of embodiment of the preceding electrode 200 in the hull cell shown in Fig. 5, can the see before surface of electrode 200 is rough microfluctuation structure, is referred to as the matte light trapping structure of " pyramid-like shape " microcosmic.On the one hand, on light trapping structure 110, adopt the LPCVD method to form before electrode 200, help to alleviate the electrology characteristic that occurs when the LPCVD method is made the preceding electrode of ZnO and the contradiction of the mutual restriction between the optical characteristics; On the other hand, because the preceding electrode 200 that the LPCVD method forms has the matte light trapping structure of above-mentioned microcosmic, this matte light trapping structure and light trapping structure 110 actings in conjunction can further promote the sunken optical property of thin-film solar cells.In addition, because the existence of light trapping structure 110, the surface that preceding electrode 200 contacts with light trapping structure 110 has up-and-down shape equally, and therefore the effective area of preceding in fact electrode 200 increases, and helps the service behaviour of enhanced film solar cell.
Please refer to Fig. 5, form after the preceding electrode 200, execution in step S103, other structures of formation thin-film solar cells on preceding electrode 200 successively.Particularly, on preceding electrode 200, form light energy conversion layer 300 and back electrode 400 successively.Preferably, pile up the laminate film battery of (Micromorph) for non-crystallite, light energy conversion layer 300 is made of a-Si layer and μ c-Si layer.The material of back electrode 400 is also selected ZnO for use, and its formation method is determined by the manufacturing demand.The method that forms above-mentioned light energy conversion layer 300 and back electrode 400 is known by the technical staff in the art, selects for use according to demand to get final product, and does not repeat them here.
On the basis of the structure that forms the thin-film solar cells shown in Fig. 5, also continue to form other structures, for example base for supporting etc.
Make the gained thin-film solar cells according to said method, several preferred embodiments arranged, provide the explanation of these several preferred embodiments below:
Embodiment one:
Please refer to Fig. 5, Fig. 5 shows a kind of sectional structure schematic diagram of thin-film solar cells, and this battery comprises:
Before electrode 200, be formed on the one side that pattern glass substrate 100 has light trapping structure 110;
Light energy conversion layer 300 is formed on the preceding electrode 200;
Wherein, light trapping structure 110 is arranged by the pit rule with geometry and is constituted, and please refer to Fig. 3, and light trapping structure 110 is cellular tight arrangement by orthohexagonal pit 111 at glass surface and constitutes, and the length of side of this orthohexagonal pit 111 is 0.3mm.The material of preceding electrode 200 is ZnO, adopts sputtering method to be formed on the light trapping structure 110.Light energy conversion layer 300 is made of a-Si layer and μ c-Si layer.The material of back electrode 400 also is ZnO.In addition, this thin-film solar cells can also comprise other structures, for example base for supporting etc.In the present embodiment, the one side that pattern glass substrate 100 is smooth is advanced the light face as hull cell.The film of electrode 200 is formed on the light trapping structure 110 before the ZnO, so the surface that electrode 200 contacts with light trapping structure 110 before the ZnO also has sunken light action, need not again electrode 200 before the sputtering method formation ZnO to be carried out chemical etching and can satisfy the mist degree requirement; Because the existence of light trapping structure 110, the surface that preceding electrode 200 contacts with light trapping structure 110 can not be mirror shape, but have up-and-down shape, therefore the effective area of preceding in fact electrode 200 increases, and helps the service behaviour of enhanced film solar cell.
Embodiment two:
Present embodiment and embodiment one difference are: the material of preceding electrode 200 is also selected ZnO for use, but be to adopt the LPCVD method to be formed on the light trapping structure 110, therefore the surface of electrode 200 is rough relief fabric before, be referred to as " pyramid-like shape " surface (please refer to Fig. 6), this suede structure has sunken light action.The advantage of present embodiment is: on the one hand, on light trapping structure 110, adopt the LPCVD method to form before electrode 200, help to alleviate the electrology characteristic that occurs when the LPCVD method is made the preceding electrode of ZnO and the contradiction of the mutual restriction between the optical characteristics; On the other hand, because the preceding electrode 200 that the LPCVD method forms has the matte light trapping structure of above-mentioned microcosmic, this matte light trapping structure and light trapping structure 110 actings in conjunction can further promote the sunken optical property of thin-film solar cells.In addition, because the existence of light trapping structure 110, the surface that preceding electrode 200 contacts with light trapping structure 110 has up-and-down shape equally, and therefore the effective area of preceding in fact electrode 200 increases, and helps the service behaviour of enhanced film solar cell.
Embodiment three:
The difference of present embodiment and embodiment one and embodiment two is: in the present embodiment, the one side that pattern glass substrate 100 is had a light trapping structure 110 is advanced the light face as thin-film solar cells, electrode 200 is formed on the smooth one side of pattern glass substrate 100 promptly, forms light energy conversion layer 300 and back electrode 400 then successively.
Except above-mentioned difference, in the present embodiment related other parts can reference example one or embodiment two in the description of relevant portion.The advantage of present embodiment is, compared with the thin-film solar cells of using plate glass as preceding glass sheet, present embodiment use one side that pattern glass substrate 100 has a light trapping structure 110 as thin-film solar cells advance the light face, can improve the sunken light effect of thin-film solar cells.
The manufacture method of a kind of thin-film solar cells provided by the invention has solved problems of the prior art effectively, can strengthen sunken light effect by selecting pattern glass with specific light trapping structure for use as the preceding glass sheet of thin-film solar cells.Further,, need not to use the HCl etching can reach the effect that falls into light, can simplify the production process of thin-film solar cells and save material if use sputtering method to prepare electrode before the ZnO; Use pattern glass as preceding glass sheet, the contradiction of the mutual restriction in the time of can alleviating the LPCVD method and prepare electrode before the ZnO between electrology characteristic and the optical characteristics; In conjunction with electrode before LPCVD method or the sputtering method growth ZnO, can reduce the thickness of the preceding electrode film of this ZnO, improve the transmitance of light, promote the performance of thin-film solar cells.The invention provides its short-circuit current density of thin-film solar cells and photoelectric conversion efficiency and all be improved, service behaviour strengthens.
Above disclosed only is preferred embodiments more of the present invention, can not limit the present invention's interest field certainly with this, and therefore the equivalent variations of doing according to claim of the present invention still belongs to the scope that the present invention is contained.
Claims (19)
1. the manufacture method of a thin-film solar cells is characterized in that, this method comprises:
As substrate, the one side of this pattern glass has light trapping structure with pattern glass;
Electrode before arbitrary formation of described pattern glass;
Form other structures of thin-film solar cells.
2. method according to claim 1 is characterized in that:
Electrode is formed on the one side that described pattern glass has light trapping structure before described.
3. method according to claim 1 and 2 is characterized in that:
Described light trapping structure is formed by the non-tin face that knurling mould rolls glass.
4. method according to claim 1 and 2 is characterized in that:
Described light trapping structure is arranged by the pit rule with geometry and is constituted.
5. method according to claim 4 is characterized in that:
Described pit be shaped as regular hexagon, this orthohexagonal length of side is 0.3mm;
Described pit is cellular tight arrangement on described pattern glass surface and constitutes described light trapping structure.
6. method according to claim 1 and 2 is characterized in that:
Electrode is an electrode before the transparent conductive oxide before described.
7. method according to claim 6 is characterized in that:
Electrode is formed by the sputtering method ZnO that grows on described light trapping structure before the described transparent conductive oxide.
8. method according to claim 6 is characterized in that:
Electrode is formed by the low-pressure chemical vapor deposition method ZnO that grows on described light trapping structure before the described transparent conductive oxide, has the matte light trapping structure.
9. method according to claim 1 is characterized in that, other structures of described formation thin-film solar cells comprise:
Before described, form light energy conversion layer and back electrode on the electrode successively.
10. method according to claim 9 is characterized in that:
Described light energy conversion layer is made of a-Si layer and μ c-Si layer;
The material of described back electrode is ZnO.
11. a thin-film solar cells is characterized in that, this battery comprises:
The pattern glass substrate, the one side of this pattern glass substrate has light trapping structure;
Before electrode, be formed on arbitrary of described pattern glass substrate;
Light energy conversion layer is formed on the described preceding electrode;
Back electrode is formed on the described light energy conversion layer.
12. thin-film solar cells according to claim 11 is characterized in that:
Described preceding electrode is formed on described pattern glass substrate to have on the one side of light trapping structure.
13., it is characterized in that according to claim 11 or 12 described thin-film solar cells:
Described light trapping structure is arranged by the pit rule with geometry and is constituted.
14. thin-film solar cells according to claim 13 is characterized in that:
Described pit be shaped as regular hexagon, this orthohexagonal length of side is 0.3mm;
Described pit is cellular tight arrangement on described pattern glass surface and constitutes described light trapping structure.
15., it is characterized in that according to claim 11 or 12 described thin-film solar cells:
Electrode is an electrode before the transparent conductive oxide before described.
16. thin-film solar cells according to claim 15 is characterized in that:
The material of electrode is ZnO before the described transparent conductive oxide.
17. thin-film solar cells according to claim 16 is characterized in that:
Electrode is formed by the sputtering method ZnO that grows on described light trapping structure before the described transparent conductive oxide.
18. thin-film solar cells according to claim 16 is characterized in that:
Electrode is formed by low-pressure chemical vapor deposition method growth ZnO on described light trapping structure before the described transparent conductive oxide, has the matte light trapping structure.
19. thin-film solar cells according to claim 11 is characterized in that:
Described light energy conversion layer is made of a-Si layer and μ c-Si layer;
The material of described back electrode is ZnO.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178156A (en) * | 2013-02-01 | 2013-06-26 | 上海交通大学 | Preparation method and application of thin-film solar cell light trapping structured glass |
| CN103280480A (en) * | 2013-05-31 | 2013-09-04 | 浙江正泰太阳能科技有限公司 | Thin-film solar cell substrate, thin-film solar cell and manufacturing method of thin-film solar cell |
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| JP2000049368A (en) * | 1998-07-29 | 2000-02-18 | Kyocera Corp | Manufacture of solar battery element |
| CN101246924A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Solar battery with substrate having texture surface |
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| CN103178156A (en) * | 2013-02-01 | 2013-06-26 | 上海交通大学 | Preparation method and application of thin-film solar cell light trapping structured glass |
| CN103280480A (en) * | 2013-05-31 | 2013-09-04 | 浙江正泰太阳能科技有限公司 | Thin-film solar cell substrate, thin-film solar cell and manufacturing method of thin-film solar cell |
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Application publication date: 20110928 |