CN102033374B - Thin film transistor-liquid crystal display (TFT-LCD) array substrate, manufacturing method and disconnection maintenance method - Google Patents
Thin film transistor-liquid crystal display (TFT-LCD) array substrate, manufacturing method and disconnection maintenance method Download PDFInfo
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- CN102033374B CN102033374B CN200910235515.9A CN200910235515A CN102033374B CN 102033374 B CN102033374 B CN 102033374B CN 200910235515 A CN200910235515 A CN 200910235515A CN 102033374 B CN102033374 B CN 102033374B
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Abstract
The embodiment of the invention discloses a thin film transistor-liquid crystal display (TFT-LCD) array substrate, a manufacturing method and a disconnection maintenance method and relates to liquid crystal display technology, which can simplify detection and maintenance flows in a TFT technical process. The TFT-LCD array substrate comprises a plurality of pixel units which are defined by grid lines and data lines, wherein a thin film transistor and a pixel electrode are formed in each pixel unit; at least two puncture structures are formed on a conductive pattern in the pixel unit or on a region which is adjacent to the conductive pattern; and each puncture structure comprises a substrate and a spine which penetrates through an insulating layer and is formed on the substrate. The TFT-LCD array substrate provided by the embodiment of the invention is suitable for improving disconnection maintenance efficiency in the TFT technical process.
Description
Technical field
The present invention relates to lcd technology, relate in particular to a kind of TFT-LCD (Thin Film Transistor-LCD) array base palte, manufacture method and broken string method for maintaining.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor-Liquid Crystal Display, TFT-LCD) have the characteristics such as volume is little, low in energy consumption, radiationless, manufacturing cost is relatively low, occupied leading position in current flat panel display market.
The agent structure of TFT-LCD comprises box together and with liquid crystal sandwiched array base palte and color membrane substrates therebetween, the pixel electrode that is formed with the grid line that sweep signal is provided, the data line that data-signal is provided on the array base palte and forms pixel.
The preparation technology of TFT-LCD mainly comprises the array processes of preparation array base palte and color membrane substrates, with array base palte and color membrane substrates to box and inject the molding process of liquid crystal and follow-up module technique.In above-mentioned array processes process, broken string is a kind of common bad, and bad than pixel, and the ratio of the bad generation of breaking is very high; Comprise grid line broken string and broken data wire in the middle of this.The generation of grid line broken string and broken data wire can cause the pixel of a whole row or column normally not work, and then affects the imaging of picture.
For the situation that the grid line broken string may occur, because grid line is at the bottom of whole TFT structure, if after finishing all TFT technique, again to the bad words of keeping in repair of the broken string on its grid line, just increase the difficulty of maintenance, and can produce bad impact to other layer.Therefore, in present TFT-LCD technique, all be after finishing the formation technique of grid line, carry out at once OS test (broken string/short-circuit detecting) judge whether exist on the grid line break bad; If exist, the maintenance of then breaking at once.
After whole TFT technique is finished, also to carry out one-time detection, in order to judge on the data line or other parts whether exist the broken string bad.Therefore, before molding process, to carry out at least twice bad detection of broken string, will so that the process of inspection and repair takies the long time, have influence on the efficient of the maintenance of breaking in the TFT manufacture process like this.
Summary of the invention
Embodiments of the invention provide a kind of TFT-LCD array base palte, manufacture method and broken string method for maintaining, can simplify the flow process that detects and keep in repair in the TFT technological process, improve the efficient of the maintenance of breaking in the TFT technological process.
For achieving the above object, embodiments of the invention adopt following technical scheme:
A kind of TFT-LCD array base palte comprises several pixel cells that limited by grid line and data line, is formed with thin film transistor (TFT) and pixel electrode in each pixel cell; Wherein, be formed with at least two places puncture structure on the conductive pattern or with the zone of conductive pattern adjacency in described pixel cell, described puncture structure comprises substrate and is formed on this suprabasil spine that penetrates insulation course.
A kind of manufacture method of TFT-LCD array base palte comprises:
A kind of broken string method for maintaining that is applied to above-mentioned TFT-LCD array base palte comprises:
Step 1 ', determine the position of grid line breakpoint or data line breakpoint;
Step 2 ', above insulation course deposits conductive material, with lay respectively at described breakpoint both sides and divide with the sharp portion of nearest at least two places of described breakpoint puncture structure and to be electrically connected.
The TFT-LCD array base palte that the embodiment of the invention provides, manufacture method and broken string method for maintaining, owing to be provided with the puncture structure of the penetrable insulation course of spine part, therefore when grid line broken string or broken data wire occurring, only need to be positioned at insulation course at least two puncture structures above and that be connected with the grid line that broken string occurs or data line and be connected, just be equivalent to divide to disconnection portion by putting up a bridge be provided with a new path; The TFT-LCD array base palte that provides by the embodiment of the invention, manufacture method and broken string method for maintaining, detection that can the broken string of grid line and data line is bad and maintenance all are placed on to be carried out after whole TFT technique is finished again, so just can save an OS test after grid line forms technique, improve the efficient of the maintenance of breaking in the TFT technological process.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the accompanying drawing of required use was done to introduce simply during the below will describe embodiment, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the synoptic diagram of the TFT-LCD array base palte in the embodiment of the invention;
Fig. 2 is that puncture structure among Fig. 1 is along the sectional view one of A-A line;
Fig. 3 is the synoptic diagram one of the TFT-LCD array base palte in the embodiment of the invention one;
Fig. 4 is the synoptic diagram two of the TFT-LCD array base palte in the embodiment of the invention one;
Fig. 5 is the synoptic diagram one of the TFT-LCD array base palte in the embodiment of the invention two;
Fig. 6 is the synoptic diagram two of the TFT-LCD array base palte in the embodiment of the invention two;
Fig. 7 is that puncture structure among Fig. 1 is along the sectional view two of A-A line;
Fig. 8 is that puncture structure among Fig. 1 is along the sectional view three of A-A line;
Fig. 9 is the manufacture method process flow diagram of the TFT-LCD array base palte in the embodiment of the invention three;
Figure 10 is the synoptic diagram of the puncture structure-forming process in the embodiment of the invention three;
Figure 11 is the process flow diagram of the broken string method for maintaining in the embodiment of the invention four;
Figure 12 is the design sketch one of the broken string maintenance in the embodiment of the invention four;
Figure 13 is the design sketch two of the broken string maintenance in the embodiment of the invention four;
Figure 14 is the design sketch three of the broken string maintenance in the embodiment of the invention four;
Figure 15 is the design sketch four of the broken string maintenance in the embodiment of the invention four;
Figure 16 is the design sketch five of the broken string maintenance in the embodiment of the invention four;
Mark among the figure: 1-grid line; The 2-data line; The 3-thin film transistor (TFT); The 4-pixel electrode; The 5-structure that punctures; The substrate of 51-puncture structure; The spine of 52-puncture structure; The 6-insulation course; The 7-glass substrate; The 8-metal barrier; The 9-shield bars; The 10-conducting film; 11-grid metallic film; 12-metal barrier layer film; The 13-photoresist; The 14-breakpoint; The 15-conductive strips.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Below in conjunction with accompanying drawing embodiment of the invention TFT-LCD array base palte, manufacture method and broken string method for maintaining are described in detail.
In conjunction with illustrated in figures 1 and 2, the TFT-LCD array base palte that the embodiment of the invention provides comprises grid line 1, data line 2 and several pixel cells that limited by grid line 1 and data line 2, is formed with thin film transistor (TFT) 3 and pixel electrode 4 in each pixel cell; Wherein, be formed with at least two places puncture (pinhole) structure 5 on the conductive pattern or with the zone of conductive pattern adjacency in described pixel cell, described puncture structure 5 comprises substrate 51 and is formed on the spine that penetrates insulation course 6 52 in this substrate 51; And described substrate 51 and described conductive pattern (among Fig. 2 take grid line 1 as example) are electrically connected;
The conductive pattern here can be a kind of in any bad plain conductor (such as grid line, data line, public electrode wire etc.) that may occur breaking, or the combination of a kind of and shield bars of above-mentioned any bad plain conductor that may occur breaking.
In addition, as can see from Figure 2, be formed with grid line 1 at glass substrate 7, because mostly grid line be to be formed by metallic aluminium (Al) or copper (Cu), therefore form spine on the grid line surface easily during the thermal treatment in carrying out the TFT technological process; In order to prevent forming spine on the grid line 1, therefore be equipped with metal barrier 8 at grid line 1, the material of this metal barrier 8 can be metal molybdenum (Mo).
In conjunction with foregoing description, can obtain following two kinds of schemes that realize the puncture structures (the puncture structure that is electrically connected with grid line to be set as example):
One, some zone on grid line does not arrange described metal barrier, and then after bakingout process, spine can appear in the zone that metal barrier is not set, thereby has formed take the grid line on covering metal restraining barrier not partly as the puncture structure of substrate;
Its two, the puncture structural substrates that is electrically connected at the neighboring region setting of grid line and described grid line, and make in the described substrate by thermal treatment and to form spine, thus form the puncture structure of substrate and grid line electric connection.
No matter adopt above-mentioned which kind of scheme to realize described puncture structure, need all to guarantee that described puncture structure can only be electrically connected with a kind of conductive pattern; For example, if the substrate of puncture structure links to each other with grid line, the spine that then forms thereon just can not have any electrical contact with data line or pixel electrode, otherwise can cause pixel bad.
But, for the first scheme, directly form described spine at grid line, may produce harmful effect to the transmission of the signal on the grid line, therefore in the present embodiment with first scheme for preferred embodiment.The below forms described puncture structure as example still in conjunction with shown in Figure 2 take the neighboring region at grid line 1, and the TFT-LCD array base palte that the embodiment of the invention is provided is described further:
As shown in Figure 2, with the substrate 51 of grid line 1 with the structure 5 that punctures in addition of layer setting, be formed with spine 52 in substrate 51, this spine 52 penetrates insulation course 6, also can expose its tip portion on insulation course 6; If contact between described spine 52 and the pixel electrode 4, just formed electrical connection between grid line 1 and the pixel electrode 4 so, thereby it is bad to produce pixel; Therefore, in order to prevent producing contact between spine 52 and the pixel electrode 4, puncture structure 5 should be arranged on the zone in addition, zone of pixel electrode 4 correspondences in each pixel cell.
Foregoing description only is puncture structure 5 and grid line 1 electric connection, is example in order to the broken string on the grid line 1 is keeped in repair; Certainly, the substrate 51 of puncture structure 5 can also be to be electrically connected with data line 2, so that the broken string that occurs on the data line 2 is keeped in repair.
The TFT-LCD array base palte that the embodiment of the invention provides, owing to be provided with and puncture structure its spine partial penetration insulation course that be electrically connected with grid line or data line, therefore when grid line broken string or broken data wire occurring, only need to be positioned at insulation course at least two puncture structures above and that be connected with the grid line that broken string occurs or data line and be connected; Like this, detection that just can the broken string of grid line and data line is bad and maintenance all are placed on to be carried out after whole TFT technique is finished again, saves an OS test after grid line forms technique, improves the efficient of the maintenance of breaking in the TFT technological process.
Below in conjunction with specific embodiment and relevant accompanying drawing, the TFT-LCD array base palte that the embodiment of the invention is provided is further described.
Embodiment one:
In the present embodiment, be set to example to include with the puncture structure of grid line electric connection and substrate and the grid line of described puncture structure with layer in the TFT-LCD array base palte, the TFT-LCD array base palte that the embodiment of the invention is provided is described further.
TFT-LCD array base palte in the present embodiment comprises grid line 1, data line 2 and several pixel cells that limited by grid line 1 and data line 2, is formed with thin film transistor (TFT) 3 and pixel electrode 4 in each pixel cell; Wherein, the neighboring region of grid line is formed with at least two places punctures structure 5 in described pixel cell, and described puncture structure 5 comprises substrate 51 and is formed on and penetrates insulation course 6 spine 52 of (insulation course 6 in the present embodiment comprises gate insulation layer and passivation layer) in this substrate 51; And described grid line 1 is electrically connected with described substrate 51.
Particularly, for the puncture structure 5 substrate 51 how to be electrically connected with grid line 1, it mainly contains following two kinds of implementations:
One, described at least two places puncture structure 5 can be formed at least one side of grid line, and the substrate 51 of described puncture structure 5 directly is connected with grid line 1; Referring to shown in Figure 1, only be formed with the puncture structure as example take a side of a grid line wherein among the figure, other grid line also all is formed with its at least two places puncture structure that is connected accordingly in the array base palte of reality, does not just all illustrate among the figure.
It should be noted that, array base palte shown in Fig. 1 is with the hearth electrode (Cst on Common) of public electrode wire (not shown) as memory capacitance, has certain distance between grid line 1 and the pixel electrode 4, therefore described puncture structure 5 be formed on the upside of grid line 1 or downside can, can certainly all be formed with described puncture structure 5 at upside and the downside of grid line 1; But, for array base palte shown in Figure 3, it is with the hearth electrode (Cst on Gate) of grid line as memory capacitance, this moment, there was overlapping part in the zone of grid line 1 and pixel electrode 4 correspondences, contact for fear of producing between spine 52 and the pixel electrode 4 of puncture structure 5, so just described puncture structure 5 can only be formed on the side away from pixel electrode 4 of grid line 1 for this array base palte.
Its two, except above-mentioned puncture structure 5 directly with the grid line 1 such array base palte that becomes one that links together, can also be electrically connected by will puncture structure 5 and grid line 1 of shield bars 9.As shown in Figure 4, an end of described shield bars 9 links to each other with grid line 1, and the other end is not electrically connected; Because shield bars 9 and pixel electrode 4 corresponding zones exist part overlapping, therefore, can described puncture structure 5 be set in the side away from pixel electrode 4 of shield bars 9; Only be an instantiation of this implementation shown in Fig. 4, puncture structure 5 can be arranged on but be not limited to the head portion away from coupled grid line 1 of shield bars 9.So long as puncture structure 5 can be electrically connected by setting up between shield bars 9 and the grid line 1, the particular location of puncture structure 5 can be determined according to the needs of trace arrangements in the actual TFT technique.
The TFT-LCD array base palte that the embodiment of the invention provides, owing to be provided with and puncture structure its spine partial penetration insulation course that be electrically connected with grid line, therefore when the grid line broken string occurring, at least two places in the many places puncture structure that only needs to be connected with the grid line of described appearance broken string are electrically connected the maintenance that can realize the grid line broken string; Like this, just grid line can be broken bad detection and maintenance all are placed on to be carried out after whole TFT technique is finished again, saves an OS test after grid line forms technique, improves the efficient of the maintenance of breaking in the TFT technological process.
Embodiment two:
In the present embodiment, to include the puncture structure that is electrically connected with data line as example in the TFT-LCD array base palte, the TFT-LCD array base palte that the embodiment of the invention is provided is described further.
As shown in Figure 5, the TFT-LCD array base palte in the present embodiment comprises grid line 1, data line 2 and several pixel cells that limited by grid line 1 and data line 2, is formed with thin film transistor (TFT) 3 and pixel electrode 4 in each pixel cell; Wherein, the neighboring region of data line is formed with at least two places punctures structure 5 in described pixel cell, and described puncture structure 5 comprises substrate 51 and is formed on and penetrates insulation course 6 spine 52 of (6 of the insulation courses in the present embodiment comprise passivation layer) in this substrate 51; And described data line 2 is electrically connected with described substrate 51.
Particularly, for the puncture structure 5 substrate 51 how to be electrically connected with data line 2, its implementation is similar with the mode that substrate 51 is connected with grid line 1, and following two kinds of implementations are arranged equally:
One, described at least two places puncture structure 5 can be formed at least one side of data line 2, and the substrate 51 of described puncture structure 5 arranges with layer with described data line 2 and directly is connected with data line 2; Referring to shown in Figure 5, only be formed with the puncture structure as example take a side of a data line wherein among the figure, other data line also all is formed with its at least two places puncture structure that is connected accordingly in the array base palte of reality, does not just all illustrate among the figure.
Its two, puncture structure 5 in described at least two places can also be electrically connected by shield bars 9 and data line 2; Shield bars more than 9 is formed in grid line layer, and for the convenient structure 5 that will puncture is connected with shield bars 9, the substrate 51 of the structure 5 that preferably will puncture in this implementation arranges with layer with shield bars 9.As shown in Figure 6, part on the described shield bars 9 and data line 2 corresponding zones have overlapping (seeing border circular areas among the figure), thereby shield bars 9 and data line 2 are coupled together by the spine that grid insulating layer through hole is set or form penetrable gate insulation layer at shield bars 9 at overlapping region; Simultaneously, puncture structure 5 is set in a side of shield bars 9 or at the two ends of shield bars 9.If it is overlapping that shield bars 9 and pixel electrode 4 corresponding zones have, the structure that then punctures 5 will be avoided described pixel electrode 4 corresponding zones, in order to avoid cause pixel bad.
The TFT-LCD array base palte that the embodiment of the invention provides, owing to be provided with and puncture structure its spine partial penetration insulation course that be electrically connected with data line, therefore when broken data wire occurring, at least two places in the many places puncture structure that only needs to be connected with the data line of described appearance broken string are electrically connected the maintenance that can realize broken data wire; Like this, just can saving when maintenance of at every turn breaking all needs the process of again punching, and has simplified the flow process of broken data wire maintenance, improves the efficient of the maintenance of breaking in the TFT technological process.
In the embodiment of above-mentioned TFT-LCD array base palte, respectively being provided with the puncture structure that links to each other with data line with grid line as example, but TFT-LCD array base palte provided by the invention is not limited to this; For example, in a kind of TFT-LCD array base palte, the second puncture structure that can also be provided with simultaneously the first puncture structure that links to each other with grid line and link to each other with data line, be not electrically connected between described the first puncture structure and the second puncture structure as long as can guarantee, then the TFT-LCD based on this array base palte can keep in repair grid line broken string and broken data wire when keeping in repair easily simultaneously, improves the efficient of the maintenance of breaking in the TFT technological process.
For the tft array substrate that provides among above-described embodiment one and the embodiment two, the temperature and time the when height of puncture structure can be by thermal treatment controls to realize the control to its spine Partial Height; Generally speaking, the spine 52 of puncture structure will penetrate insulation course 6 but can not touch liquid crystal layer, therefore, on the basis of above-mentioned tft array substrate, can also above insulation course 6, form the conducting film that covers described spine 52 fully 10 (referring to Fig. 7) with described puncture structural correspondence.At first, described spine 52 upwardly extending degree played certain protective effect to liquid crystal layer when this conducting film can weaken thermal treatment; Secondly, this conducting film puncture structure that can also avoid in adding electric process, may occurring phenomenon of melting.For simple flow, this conducting film can be formed on same layer with pixel electrode, and this conducting film can not link to each other with pixel electrode certainly.
In addition, the zone of relatively described puncture structure can also be formed with via hole (referring to Fig. 8) on insulation course 8, and the spine 52 of described puncture structure is located in this via hole; Based on such structure, even phenomenon appears melting in the puncture structure in adding electric process, the spine part of melting distortion still is arranged in described via hole, when keeping in repair or only needing will at least two puncture structures connect by the depositing electrically conductive material get final product, thereby avoid adding the harmful effect that the phenomenon of the puncture structure thawing that may occur in the electric process is brought maintenance effect.
In order to realize better above-mentioned TFT-LCD array base palte, the embodiment of the invention also provides a kind of manufacture method of above-mentioned TFT-LCD array base palte.
Embodiment three:
As shown in Figure 9, the manufacture method of the TFT-LCD array base palte that present embodiment provides comprises:
The conductive pattern here can be a kind of in any bad plain conductor (such as grid line, data line, public electrode wire etc.) that may occur breaking, or the combination of a kind of and shield bars of above-mentioned any bad plain conductor that may occur breaking.
In above-mentioned steps 1, can when forming grid line, the substrate of described puncture structure be formed at least one side of described grid line, and the substrate of described puncture structure links to each other directly with described grid line; Perhaps, can when forming data line, the substrate of described puncture structure be formed at least one side of described data line, and the substrate of described puncture structure links to each other directly with described data line;
Perhaps,
Can when forming grid line, the substrate of described puncture structure be formed on a side of described shield bars, and, described shield bars directly links to each other with described grid line, and perhaps described shield bars links to each other with described data line by the via hole on the gate insulation layer or at the spine that shield bars forms.
Particularly, to form the puncture structure that is electrically connected with grid line as example and in conjunction with shown in Figure 10, the implementation procedure that above-mentioned steps 1 is formed the substrate of the puncture structure that is electrically connected with described grid line is described further:
The process of above-mentioned formation puncture structure only is that as for puncture structure corresponding to data line, its forming process is roughly similar take puncture structure corresponding to grid line as example, mainly has a following difference:
When carrying out step 11, become: sedimentary origin leaks metallic film (material is Al) and metal barrier layer film on gate insulation layer, then apply photoresist (equally take positive photoresist as example), and utilize light tight mask in the zone that needs are made data line, utilize semi-transparent mask in the zone of needs making puncture structure simultaneously, and utilize complete printing opacity mask in other zones;
Accordingly afterwards, form the data line that is coated with metal barrier through series of process, and the not substrate of the puncture structure on covering metal restraining barrier.
In addition, in the process of carrying out step 1, can also be by the conducting film 10 of composition technique formation with described puncture structural correspondence when forming pixel electrode, this conducting film 10 can cover spine 52 (referring to Fig. 7) fully.Such one deck conducting film 10 is set in the TFT-LCD array base palte; described spine 52 upwardly extending degree in the time of not only can weakening thermal treatment; liquid crystal layer is played certain protective effect, but also can avoid in adding electric process, occurring the phenomenon that the puncture structure is melted.
For fear of the harmful effect that the phenomenon that adds the puncture structure thawing that may occur in the electric process is brought maintenance effect, can also etch at insulation course 6 via hole (referring to Fig. 8) of described puncture structural correspondence.Because the material that the puncture structure adopts mostly is active metal (being generally Al), be easy to form layer oxide film on its surface, therefore in etching process, the puncture structure can not be subject to the impact of etching, thereby the spine 52 of formation puncture structure is arranged in the structure of described via hole.Based on such structure, even phenomenon appears melting in the puncture structure in adding electric process, the spine part of melting distortion still is arranged in described via hole, when keeping in repair or only needing will at least two puncture structures connect by the depositing electrically conductive material get final product, thereby avoid adding the harmful effect that the phenomenon of the puncture structure thawing that may occur in the electric process is brought maintenance effect.
The manufacture method of the TFT-LCD array base palte that the embodiment of the invention provides, by setting and grid line or data line is that be electrically connected and puncture structure its spine partial penetration insulation course, when grid line or broken data wire occurring, only need will with many places puncture structure that grid line or the data line of described appearance broken string are connected at least two places be electrically connected the maintenance that can realize grid line or broken data wire, simplified the flow process of TFT process disruption line maintenance; Especially for the situation of grid line broken string, grid line can be broken bad detection and maintenance all are placed on to be carried out after whole TFT technique is finished again, saves an OS test after grid line forms technique, thereby improves the efficient of the maintenance of breaking in the TFT technological process.
Embodiment four:
For above-mentioned TFT-LCD array base palte, the embodiment of the invention also provides a kind of method of the maintenance of breaking, and as shown in figure 11, comprising:
Step 1 ', determine the position of grid line breakpoint or data line breakpoint;
Step 2 ', above insulation course deposits conductive material, with lay respectively at described breakpoint both sides and divide with the sharp portion of nearest at least two places of described breakpoint puncture structure and to be electrically connected.
Particularly, if there is grid line broken string, then will with many places puncture structure that described grid line is electrically connected in the spine part of at least two places puncture structure be connected by described conductive material.The below is for the situation of grid line broken string and show the maintenance effect of the method for maintaining that the embodiment of the invention provides in conjunction with the example of several concrete TFT-LCD array base palte that is mentioned to previously.
Shown in Figure 12 or 13, for TFT-LCD array base palte shown in Figure 1, breakpoint 14 appears at grid line 1, then can be by above insulation course, passing through CVD (Chemical Vapor Deposition, chemical vapor deposition) the process deposits conductive materials forms conductive strips 15, thereby the spine of at least two places puncture structure of these breakpoint 14 both sides is partly coupled together;
As shown in figure 14, for the TFT-LCD array base palte that has shield bars and by this shield bars grid line and the structure that is connected are connected shown in Figure 4, if breakpoint 14 occurs at grid line 1, then can be above insulation course zone beyond the pixel electrode corresponding region form conductive strips 15 by CVD process deposits conductive materials, thereby the spine of at least two places puncture structure of breakpoint 14 both sides is partly coupled together.
If there is broken data wire, then will with many places puncture structure that described data line is electrically connected in the spine part of at least two places puncture structure be connected by described conductive material.The below is for the situation of broken data wire and show the maintenance effect of the method for maintaining that the embodiment of the invention provides in conjunction with the example of several concrete TFT-LCD array base palte that is mentioned to previously.
As shown in figure 15, for the TFT-LCD array base palte among Fig. 5, breakpoint 14 appears at data line 2, then can be by above insulation course, forming conductive strips 15 by CVD process deposits conductive materials, thus the spine of at least two places puncture structure of these breakpoint 14 both sides is partly coupled together;
As shown in figure 16, for the TFT-LCD array base palte that has shield bars and by this shield bars data line and the structure that is connected are connected among Fig. 6, if breakpoint 14 occurs at data line 2, zone beyond then can be in the above pixel electrode of insulation course corresponding region forms conductive strips 15 by CVD process deposits conductive materials, thereby the spine of at least two places puncture structure of breakpoint 14 both sides is partly coupled together.
The broken string method for maintaining of the TFT-LCD array base palte that the embodiment of the invention provides, be electrically connected owing in above-mentioned TFT-LCD array base palte, be provided with grid line or data line, and the puncture structure of its spine partial penetration insulation course, therefore when grid line broken string or broken data wire occurring, only need to be positioned at more than the insulation course, and at least two puncture structures that are connected with the grid line that broken string occurs or data line are connected, just be equivalent to divide to disconnection portion by putting up a bridge be provided with a new path, simplified the flow process of TFT process disruption line maintenance; Situation about especially breaking for grid line, grid line can be broken bad detection and maintenance all is placed on and carries out after whole TFT technique is finished again, so just can save an OS test after grid line forms technique, improve the efficient of the maintenance of breaking in the TFT technological process.
By the technical scheme that the embodiment of the invention provides, the maintenance of in fact can also breaking to the public electrode wire on the TFT-LCD array base palte; It should be noted that because the overlapping region of public electrode wire and pixel electrode is more therefore, the zone that the structure that punctures can be set in the side edge of public electrode wire will be subject to more restriction.But; as long as can guarantee the spine part of described puncture structure does not contact with pixel electrode; the broken string maintenance of public electrode wire can be realized by the scheme that the embodiment of the invention provides, therefore, also protection scope of the present invention should be belonged to for the break situation of maintenance of public electrode wire.
The above; be the specific embodiment of the present invention only, but protection scope of the present invention is not limited to this, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (14)
1. TFT-LCD array base palte, comprise several pixel cells that limited by grid line and data line, be formed with thin film transistor (TFT) and pixel electrode in each pixel cell, it is characterized in that, be formed with at least two places puncture structure on the conductive pattern or with the zone of conductive pattern adjacency in described pixel cell, described puncture structure comprises substrate and is formed on this suprabasil spine that penetrates insulation course; Described conductive pattern is linear, and the substrate of puncture structure and conductive pattern electric connection, and puncture structure in a place only is electrically connected with a kind of conductive pattern.
2. TFT-LCD array base palte according to claim 1 is characterized in that, the grid line in described substrate and the described pixel cell or data line are electrically connected.
3. TFT-LCD array base palte according to claim 2 is characterized in that, described substrate and described grid line arrange with layer; Perhaps,
Described substrate and described data line arrange with layer.
4. TFT-LCD array base palte according to claim 2, it is characterized in that, described at least two places puncture structure is formed at least one side of described grid line or data line, and the substrate of described grid line or the direct and described at least two places puncture of data line structure is connected.
5. TFT-LCD array base palte according to claim 2 is characterized in that, also is formed with shield bars in described pixel cell, and described grid line or data line are electrically connected by the substrate of described shield bars and described two places puncture structure at least.
6. according to claim 4 or 5 described TFT-LCD array base paltes, it is characterized in that zone corresponding with described spine on described insulation course is formed with via hole, described spine is positioned at described via hole.
7. each described TFT-LCD array base palte in 5 according to claim 1 is characterized in that the zone of corresponding described puncture structure also is formed with the conducting film that covers described spine fully above insulation course.
8. TFT-LCD array base palte according to claim 7 is characterized in that, described conducting film and described pixel electrode arrange with layer; And both do not link to each other.
9. the manufacture method of a TFT-LCD array base palte is characterized in that, comprising:
Step 1, form grid line layer, active layer, data line layer, insulation course and pixel electrode layer at substrate, wherein, when forming grid line or data line, form the substrate of the puncture structure that is electrically connected with described grid line or data line by composition technique; The substrate top of this puncture structure is the covering metal restraining barrier not, and this puncture structure is formed on the conductive pattern or with the zone of conductive pattern adjacency; Described conductive pattern is the combination of grid line or grid line and shield bars, perhaps, and the combination of data line or data line and shield bars; And puncture structure in a place only is electrically connected with a kind of conductive pattern;
Step 2, the substrate of completing steps 1 is heat-treated, make in the substrate of the described puncture structure that does not cover described metal barrier and form spine, until described spine penetrates described insulation course.
10. manufacture method according to claim 9 is characterized in that, in step 1, described puncture structure is arranged at least one side of described grid line or data line, and the substrate of described puncture structure links to each other with described grid line or data line; Perhaps,
Described puncture structure is arranged on a side of described shield bars, and described shield bars links to each other with described grid line or data line.
11. according to claim 9 or 10 described manufacture methods, it is characterized in that in described step 1, the described substrate that forms the puncture structure that is electrically connected with described grid line or data line when forming grid line or data line specifically comprises:
Step 11, leak metallic film and metal barrier layer film at substrate deposition grid metallic film or source;
Step 12, the substrate of completing steps 11 is exposed and develops, so that zone corresponding to grid line or data line remains with whole photoresists, and the zone of puncture structural correspondence remains with the part photoresist;
Step 13, the substrate of completing steps 12 is carried out successively wet etching, ashing, does the technological process of carving and peeling off, thereby obtain being coated with grid line or the data line of metal barrier, and the not substrate of the puncture structure on covering metal restraining barrier.
12. according to claim 9 or 10 described manufacture methods, it is characterized in that, also comprise:
In described step 1, by the conducting film of composition technique formation with described puncture structural correspondence, this conducting film covers the spine of described puncture structure fully when forming pixel electrode; And described conducting film does not link to each other with described pixel electrode.
13. according to claim 9 or 10 described manufacture methods, it is characterized in that, also comprise:
Step 3, the substrate of completing steps 2 is carried out etching, make the formation via hole corresponding with described spine on the insulation course; Described insulation course comprises gate insulation layer and passivation layer or includes only passivation layer.
14. the broken string method for maintaining of each described TFT-LCD array base palte is characterized in that in the claim 1 to 8, comprising:
Step 1 ', determine the position of grid line breakpoint or data line breakpoint;
Step 2 ', above insulation course deposits conductive material, with lay respectively at described breakpoint both sides and divide with the sharp portion of nearest at least two places of described breakpoint puncture structure and to be electrically connected.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910235515.9A CN102033374B (en) | 2009-09-29 | 2009-09-29 | Thin film transistor-liquid crystal display (TFT-LCD) array substrate, manufacturing method and disconnection maintenance method |
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| CN200910235515.9A CN102033374B (en) | 2009-09-29 | 2009-09-29 | Thin film transistor-liquid crystal display (TFT-LCD) array substrate, manufacturing method and disconnection maintenance method |
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| JP2000310796A (en) * | 1999-03-24 | 2000-11-07 | Samsung Electronics Co Ltd | Thin film transistor substrate for liquid crystal display device |
| US6943374B1 (en) * | 1999-08-12 | 2005-09-13 | Samsung Electronics Co., Ltd. | Thin film transistor array substrate for a liquid crystal display having repair lines |
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