CN107065343A - A kind of array base palte and its broken wire repair method, display device - Google Patents
A kind of array base palte and its broken wire repair method, display device Download PDFInfo
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- CN107065343A CN107065343A CN201710005601.5A CN201710005601A CN107065343A CN 107065343 A CN107065343 A CN 107065343A CN 201710005601 A CN201710005601 A CN 201710005601A CN 107065343 A CN107065343 A CN 107065343A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a kind of array base palte and its broken wire repair method, display device so that when data wire and scan line have fracture, while carrying out broken string reparation to data wire and scan line, and avoids the delay of signal, improves the yield of array base palte.In the embodiment of the present invention, for the reparation of scan line, it is electrically connected to each other using by the thin film transistor (TFT) in two neighboring pixel cell, pixel electrode and public electrode wire, so as to realize the scan line electrical connection at two ends of breaking；For the reparation of data wire, it is connected with each other using by the public electrode wire in a pixel cell, pixel electrode and thin film transistor (TFT), so as to realize the data wire electrical connection at two ends of breaking.Reparation of the embodiment of the present invention for data wire or scan line, it is to use the pixel cell sacrificed at broken position to be repaired for principle, reparation circuit is shorter, it is to avoid the delay of signal, and the purpose of repair data line and scan line simultaneously has been reached, improve the yield of array base palte.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of array base palte and its broken wire repair method, display device.
Background technology
The features such as Thin Film Transistor-LCD (TFT-LCD) is with its frivolous, energy-conservation and environmental protection is increasingly becoming current each
The main flow of class display development.
Existing liquid crystal display is largely backlight liquid crystal display, and it includes liquid crystal display panel and backlight mould
Group.The structure of liquid crystal display panel is by with colored optical filtering substrates (CF) and a thin-film transistor array base-plate (TFT Array
Substrate) and be arranged between two substrates liquid crystal composition.Wherein, array base palte includes multi-strip scanning line and data
Line.Specifically, referring to Fig. 1, array base palte includes：A plurality of horizontally extending scan line 10 and a plurality of vertically prolong
The data wire 11 stretched, the multiple thin film transistor (TFT)s 12 being arranged in array electrically connected with data wire and scan line, thin film transistor (TFT)
12 electrical connection pixel electrodes 13.The grid connection scan line 10 of thin film transistor (TFT) 12, the source electrode connection data of thin film transistor (TFT) 12
Line 11, the drain electrode connection pixel electrode 13 of thin film transistor (TFT) 12.Scan line 10 provides scanning-line signal, data to thin film transistor (TFT)
Line 11 provides data-signal to thin film transistor (TFT), to control the display picture of display panel.However, in the production of array base palte
Cheng Zhong, because production process is complicated, is influenceed, in fact it could happen that scan line or the situation of broken data wire by factors such as production technologies,
Display panel is caused the bad phenomenons such as black line occur.
If broken string it is bad in color membrane substrates and array base palte into finding before box, can directly be adopted by the tft substrate
Repaired with the method for laser chemical vapor deposition.But the bad ability in the lighting inspection into after box that much breaks is sent out
It is existing.
Conventional restorative procedure is to be repaired using the repair line of pixel region periphery at present, and this restorative procedure is present
The problem of be：First, the limited amount of broken string can be repaired, because pixel outer peripheral areas space is limited, therefore repairing of can designing
Multiple line quantity be it is limited, general 2 or so；Second, the species that can repair broken string is single, and periphery repair line typically can only at present
Repair data line breaks, and scan line broken string can not then be repaired；3rd, there is signal delay phenomenon, using periphery reparation
Electric signal transmission path is long when line is repaired, and causes the signal at broken string two ends inconsistent.
In summary, in can only being repaired in the prior art for data wire or scan line, and letter is caused in reparation
Number delay, reduce the yield of array base palte.
The content of the invention
The embodiments of the invention provide a kind of array base palte and its broken wire repair method, display device so that works as data wire
When having fracture with scan line, while carrying out broken string reparation to data wire and scan line, and the delay of signal is avoided, improve array
The yield of substrate.
The embodiments of the invention provide a kind of broken wire repair method of array base palte, this method includes：
When broken string phenomenon occur in scan line in array base palte and/or data wire, the position of the broken string fracture is determined；
When the broken string is scan line, determined that the last of the scanning-line signal can be received according to the position of the fracture
One pixel cell and adjacent pixel adjacent with last described pixel cell and on the scanning line scanning direction
Unit；
By thin film transistor (TFT), pixel electrode and the public electrode wire in last described pixel cell, and it is described
Public electrode wire, pixel cell and thin film transistor (TFT) in adjacent pixel unit carry out the scan line at the fracture position two ends
It is electrically connected with, and the source electrode and data of thin film transistor (TFT) in last described pixel cell and adjacent pixel unit is respectively cut
The join domain of line；
When the broken string is data wire, determine to fail to receive the of the data line signal according to the position of the fracture
One pixel cell；
By public electrode wire, pixel electrode and thin film transistor (TFT) in first pixel cell by the fracture position
The data wire at two ends is electrically connected with, and cuts the grid and scan line of thin film transistor (TFT) in first pixel cell
Join domain.
In a kind of possible embodiment, the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention
In, the public electrode wire is arranged between adjacent two scan lines and, the pixel electrode and institute parallel with the scan line
State public electrode wire has overlapping region on printing opacity direction, and the region that the public electrode wire intersects with the data wire has
Void region；
By thin film transistor (TFT), pixel electrode and the public electrode wire in last described pixel cell, and it is described
Public electrode wire, pixel cell and thin film transistor (TFT) in adjacent pixel unit carry out the scan line at the fracture position two ends
It is electrically connected with, and the source electrode and number of last described pixel cell and the thin film transistor (TFT) in adjacent pixel unit is respectively cut
According to the join domain of line, including：
The source electrode and data of last described pixel cell and the thin film transistor (TFT) in adjacent pixel unit is respectively cut
The join domain of line；
The drain electrode of thin film transistor (TFT) and public electrode wire and picture in grid, and the pixel cell described in difference welding
Plain electrode has overlapping region；
Direction that the public electrode wire is extended along the public electrode wire and along perpendicular to the public electrode wire
The direction of extension is cut, and forms the first public electrode wire and the second public electrode wire, wherein, first public electrode wire
It is described for the pixel electrode after welding in last pixel cell and adjacent pixel unit to be electrically connected with
Second public electrode wire is used to be electrical connected with the public electrode wire in other pixel cells.
In a kind of possible embodiment, the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention
In, direction that the public electrode wire is extended along the public electrode wire and along extending perpendicular to the public electrode wire
Direction is cut, including：
Public electrode wire in last described pixel cell is intersected with the data wire away from the adjacent pixel unit
The direction that extends along data wire of void region in region carry out first time cutting, by common electrical in first pixel cell
The direction that the void region in the region that polar curve intersects with the data wire away from last pixel cell extends along data wire
Second is carried out to cut；
The side that public electrode wire between being cut positioned at first time cutting and second is extended along the public electrode wire
To progress third time cutting.
In a kind of possible embodiment, the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention
In, the public electrode wire is arranged between adjacent two scan lines and, the pixel electrode and institute parallel with the scan line
State public electrode wire has overlapping region on printing opacity direction, and the region that the public electrode wire intersects with the data wire has
Void region；
By public electrode wire, pixel electrode and thin film transistor (TFT) in first pixel cell by the fracture position
The data wire at two ends is electrically connected with, and disconnects the grid and scan line of thin film transistor (TFT) in first pixel cell
Join domain, including：
Cut the grid and the join domain of scan line of the thin film transistor (TFT) in first pixel cell；
The grid of thin film transistor (TFT) described in welding and drain electrode, grid and source electrode, and first pixel cell respectively
Interior public electrode wire has overlapping region with pixel electrode；
Direction that the public electrode wire is extended along the public electrode wire and along perpendicular to the public electrode wire
The direction of extension is cut, and forms the first public electrode wire and the second public electrode wire, wherein, first public electrode wire
For the pixel electrode after welding in first pixel cell to be electrically connected with data wire, second public electrode
Line is used to be electrical connected with the public electrode wire in other pixel cells；
Data wire described in welding has overlapping region with first public electrode wire.
In a kind of possible embodiment, the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention
In, direction that the public electrode wire is extended along the public electrode wire and along extending perpendicular to the public electrode wire
Direction is cut, including：
The void region in the region that the public electrode wire in first pixel cell is intersected with data wire is along described
The direction of data wire extension carries out first time cutting；
Public electrode wire in first pixel cell is carried out second along the direction that the public electrode wire extends
Secondary cutting.
In a kind of possible embodiment, the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention
In, the array base palte also includes：Be arranged between adjacent two data line, it is parallel with the data wire and with the common electrical
The shading line that polar curve is electrical connected, the shading line has overlapping region with the pixel electrode on printing opacity direction；
When public electrode wire in the welding pixel cell has overlapping region with pixel electrode, in addition to：
Shading line described in welding in pixel cell has overlapping region with pixel electrode.
In a kind of possible embodiment, the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention
In, the welding carries out welding using laser.
In a kind of possible embodiment, the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention
In, the cutting is cut using laser.
Correspondingly, the embodiment of the present invention additionally provides a kind of array base palte, including above-mentioned provided in an embodiment of the present invention
A kind of array base palte after the broken wire repair method reparation of array base palte.
Correspondingly, the embodiment of the present invention additionally provides a kind of display device, including above-mentioned provided in an embodiment of the present invention
A kind of array base palte.
The present invention has the beneficial effect that：
The embodiments of the invention provide a kind of array base palte and its broken wire repair method, display device, the array base palte
Broken wire repair method in, when it is determined that behind the position of the broken string of scan line in array base palte, being determined to receive according to broken position
It is to last pixel cell of the scanning-line signal and adjacent with last described pixel cell and positioned at the scan line
Adjacent pixel unit on scanning direction；Pass through thin film transistor (TFT), pixel electrode and the public affairs in last described pixel cell
Public electrode wire, pixel cell and thin film transistor (TFT) in common-battery polar curve, and the adjacent pixel unit are by the cleavage
The scan line for putting two ends is electrically connected with, and film in last described pixel cell and adjacent pixel unit is respectively cut
The source electrode of transistor and the join domain of data wire；When it is determined that in array base palte after the broken position of data wire when, according to described
The position of fracture determines to fail to receive first pixel cell of the data line signal；By in first pixel cell
The data wire at the fracture position two ends is electrically connected with by public electrode wire, pixel electrode and thin film transistor (TFT), and is cut
The grid and the join domain of scan line of thin film transistor (TFT) in first pixel cell.Therefore, in the embodiment of the present invention,
For the reparation of scan line, using by the thin film transistor (TFT) in two neighboring pixel cell, pixel electrode and public electrode wire phase
Mutually electrical connection, so as to realize the scan line electrical connection at two ends of breaking；For the reparation of data wire, using by a pixel cell
In public electrode wire, pixel electrode and thin film transistor (TFT) be connected with each other, so as to realize the data wire electrical connection at two ends of breaking.
It can be seen that, the embodiment of the present invention, for the reparation of data wire or scan line, is using the pixel cell sacrificed at broken position
Repaired for principle, it is shorter to repair circuit, compared with prior art in the method repaired by using peripheral leads area,
The method that inventive embodiments are provided, it is to avoid the delay of signal, and the purpose of repair data line and scan line simultaneously has been reached, carry
The high yield of array base palte.
Brief description of the drawings
A kind of structural representation for array base palte that Fig. 1 provides for prior art；
Fig. 2 is a kind of schematic flow sheet of the broken wire repair method of array base palte provided in an embodiment of the present invention；
Fig. 3 is the structural representation for the array base palte that the embodiment of the present invention one is provided；
Fig. 4 (a) and Fig. 4 (b) are respectively the broken string reparation to the array base palte shown in Fig. 3 that the embodiment of the present invention one is provided
The schematic diagram that method is obtained when performing step when being repaired to scan line；
Fig. 5 (a) and Fig. 5 (b) are respectively the broken string reparation to the array base palte shown in Fig. 3 that the embodiment of the present invention one is provided
The schematic diagram that method is obtained when performing step when being repaired to data wire；
Fig. 6 is the structural representation for the array base palte that the embodiment of the present invention two is provided；
Fig. 7 is the broken wire repair method to the array base palte shown in Fig. 6 of the offer of the embodiment of the present invention two to scan line
The schematic diagram obtained when performing step when being repaired；
Fig. 8 is the broken wire repair method to the array base palte shown in Fig. 6 of the offer of the embodiment of the present invention two to data wire
The schematic diagram obtained when performing step when being repaired；
Fig. 9 is the structural representation for the array base palte that the embodiment of the present invention three is provided；
Figure 10 is the broken wire repair method to the array base palte shown in Fig. 9 of the offer of the embodiment of the present invention three to scan line
The schematic diagram obtained when being repaired；
Figure 11 is the broken wire repair method to the array base palte shown in Fig. 9 of the offer of the embodiment of the present invention three to data wire
The schematic diagram obtained when being repaired.
Embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with accompanying drawing the present invention is made into
One step it is described in detail, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole implementation
Example.Based on the embodiment in the present invention, what those of ordinary skill in the art were obtained under the premise of creative work is not made
All other embodiment, belongs to the scope of protection of the invention.
The embodiments of the invention provide a kind of array base palte and its broken wire repair method, display device so that works as data wire
When having fracture with scan line, while carrying out broken string reparation to data wire and scan line, and the delay of signal is avoided, improve array
The yield of substrate.
Below in conjunction with the accompanying drawings, to array base palte provided in an embodiment of the present invention and its broken wire repair method, display device
Embodiment is described in detail.
The thickness and shape of each film layer do not reflect actual proportions in accompanying drawing, and purpose is schematically illustrate present invention.
Referring to Fig. 2, a kind of broken wire repair method of array base palte provided in an embodiment of the present invention, this method includes：
S201, when there is broken string phenomenon in scan line in array base palte and/or data wire, it is determined that the position of broken string fracture；
S202, when broken string be scan line when, according to the position of fracture determine can receive last of the scanning-line signal
Individual pixel cell and adjacent pixel unit adjacent with last pixel cell and on scanning line scanning direction；
S203, the thin film transistor (TFT) by last pixel cell, pixel electrode and public electrode wire, and it is adjacent
Public electrode wire, pixel cell and thin film transistor (TFT) in pixel cell are electrically connected the scan line at fracture position two ends
Connect, and the bonding pad of the source electrode of thin film transistor (TFT) and data wire in last pixel cell and adjacent pixel unit is respectively cut
Domain；
S204, when broken string be data wire when, according to the position of fracture determine fail to receive the first of the data line signal
Individual pixel cell；
S205, by public electrode wire, pixel electrode and thin film transistor (TFT) in first pixel cell by the cleavage
The data wire for putting two ends is electrically connected with, and cuts grid and the scanning of thin film transistor (TFT) in first pixel cell
The join domain of line.
It should be noted that step S202 and step S203 are the broken string repair modes for scan line, step S204 and
Step 205 is the broken string repair mode for data wire, and step S202 and step S203 and S204 and step 205 do not have step
Successively, it can simultaneously carry out, reparation of the reparation and then execution to data wire to scan line can also be first carried out；Or lower execution
Reparation then reparation of the execution to data wire to scan line；Or, the reparation to scan line is only realized, or only realize logarithm
According to the reparation of line.Therefore, it is not that each step has to carry out in the broken string repair mode of above-mentioned offer herein, can be according to sweeping
The specific broken string situation for retouching line and data wire is determined.
By the broken wire repair method of array base palte provided in an embodiment of the present invention, when it is determined that scan line in array base palte
Behind the position of broken string, according to broken position determine can receive the scanning-line signal last pixel cell and and last
Individual pixel cell is adjacent and positioned at the adjacent pixel unit scanned on line scanning direction；By thin in last pixel cell
Public electrode wire, pixel cell and film in film transistor, pixel electrode and public electrode wire, and adjacent pixel unit is brilliant
The scan line at fracture position two ends is electrically connected with by body pipe, and last pixel cell and adjacent pixel list is respectively cut
The join domain of the source electrode of thin film transistor (TFT) and data wire in member；When it is determined that in array base palte after the broken position of data wire when,
Determined to fail to receive first pixel cell of the data line signal according to the position of fracture；By in first pixel cell
The data wire at fracture position two ends is electrically connected with by public electrode wire, pixel electrode and thin film transistor (TFT), and cuts first
The grid of thin film transistor (TFT) in individual pixel cell and the join domain of scan line.Therefore, in the embodiment of the present invention, for scanning
The reparation of line, is electrically connected to each other using by the thin film transistor (TFT) in two neighboring pixel cell, pixel electrode and public electrode wire,
So as to realize the scan line electrical connection at two ends of breaking；For the reparation of data wire, using will be public in a pixel cell
Electrode wires, pixel electrode and thin film transistor (TFT) are connected with each other, so as to realize the data wire electrical connection at two ends of breaking.It can be seen that, this
Inventive embodiments, for the reparation of data wire or scan line, are to use the pixel cell sacrificed at broken position to enter for principle
Row is repaired, and it is shorter to repair circuit, compared with prior art in the method repaired by using peripheral leads area, present invention implementation
The method that example is provided, it is to avoid the delay of signal, and the purpose of repair data line and scan line simultaneously has been reached, improve array
The yield of substrate.
Specifically, it is simple first in order to which the broken wire repair method of array base palte provided in an embodiment of the present invention is explicitly described
Easily illustrate the structure of array base palte.
Embodiment one
Referring to Fig. 3, array base palte provided in an embodiment of the present invention includes：A plurality of horizontally extending scan line 31,
The data wire 32 arranged in a crossed manner with scan line 31, one pixel cell of data wire 32 arranged in a crossed manner and the besieged city of scan line 31, often
One pixel cell includes the pixel electrode 34 for showing, and data wire 32 and the intersection region of scan line 31 are provided with film
Transistor 33, the grid 331 of thin film transistor (TFT) 33 is electrically connected with adjacent scan line 31, the source electrode 332 of thin film transistor (TFT) 33 with
Data wire 32 is electrically connected, and the drain electrode 333 of thin film transistor (TFT) 33 is electrically connected with pixel electrode 34.Wherein, two neighboring scan line 31
Between be additionally provided with public electrode wire 35, public electrode wire 35, pixel electrode 34, data wire 32 and scan line 31 are two-by-two mutually absolutely
Edge is set.Wherein, public electrode wire 35 has overlapping region with pixel electrode 34 on light direction.Source in thin film transistor (TFT)
Pole and drain electrode have overlapping region P with grid on light direction respectively, wherein, public electrode wire 35 intersects with data wire 32 to be set
The region put has void region O.
In a specific embodiment, in the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention, for
Array base palte shown in Fig. 3, public electrode wire be arranged at it is between adjacent two scan lines and parallel with scan line, pixel electrode with
Public electrode wire has overlapping region on printing opacity direction, and public electrode wire has vacancy section with data wire region arranged in a crossed manner
Domain；Step S203 passes through the thin film transistor (TFT) in last pixel cell, pixel electrode and public electrode wire, and adjacent picture
The scan line at fracture position two ends is electrically connected with by public electrode wire, pixel cell and thin film transistor (TFT) in plain unit,
And the source electrode of the thin film transistor (TFT) in last pixel cell and adjacent pixel unit and the bonding pad of data wire is respectively cut
Domain, including：The source electrode and data wire of thin film transistor (TFT) in last pixel cell and adjacent pixel unit is respectively cut
Join domain；Public electrode wire and pixel electrode in the drain electrode and grid, and pixel cell of difference welding thin film transistor (TFT)
With overlapping region；Direction that public electrode wire is extended along public electrode wire and along extending perpendicular to public electrode wire
Direction is cut, and forms the first public electrode wire and the second public electrode wire, wherein, the first public electrode wire is used for this most
Pixel electrode in latter pixel cell and adjacent pixel unit after welding is electrically connected with, and the second public electrode wire is used for
It is electrical connected with the public electrode wire in other pixel cells.
Specifically, based on the array base palte shown in Fig. 3, when scan line breaks, the broken wire repair method of scan line
As follows, such as shown in Fig. 4 (a), the fracture position of scan line is the position shown in Q, then is determined to receive according to the position Q of fracture
Last pixel cell of the scanning-line signal be pixel cell 01, it is adjacent with last pixel cell 01 and positioned at scan
Adjacent pixel unit on line scanning direction is pixel cell 02, then by pixel cell 01 and pixel cell 02, by scan line
Repaired.
To the restorative procedure of scan line, including：
Step 1: the source electrode 332 and data wire of pixel cell 01 and the thin film transistor (TFT) in pixel cell 02 is respectively cut
32 join domain so that the thin film transistor (TFT) in pixel cell 01 and pixel cell 02 is not connected with data wire 32；
Step 2: difference welding pixel cell 01 and the drain electrode 333 of the thin film transistor (TFT) in pixel cell 02 and grid
Public electrode wire 35 in 331, and pixel cell 01 and pixel cell 02 has overlapping region P with pixel electrode 34；
Step 3: the side that the public electrode wire 35 in pixel cell 01 and pixel cell 02 is extended along public electrode wire 35
To (direction of the dotted line in Fig. 4 (b) shown in a1) and along direction (the a2 institutes in Fig. 4 (b) extended perpendicular to public electrode wire 35
Show the direction of dotted line) cut, the first public electrode wire 351 and the second public electrode wire 352 are formed, wherein, first is public
Electrode wires 351 are used to the pixel electrode after welding in the pixel cell 01 and pixel cell 02 being electrically connected with, and second is public
Common-battery polar curve is used to be electrical connected with the public electrode wire in other pixel cells.
Wherein, public electrode wire 35 is cut so that public electrode wire, can in the reparation for completing scan line
To carry out the transmission of normal electrical signal by the second public electrode wire.
By Step 1: after step 2 and step 3, the scanning-line signal of the scan line after reparation is successively according to such as figure figure
Grid, source electrode, the pixel electrode 34, first of thin film transistor (TFT) in the direction of solid arrow in 4 (b), pixel cell 01 are public
The first public electrode wire 351, pixel electrode 34, the source electrode of thin film transistor (TFT), grid in common-battery polar curve 351, pixel cell 02,
Finally transfer signals in the scan line 31 on the right side of fracture position, so as to complete the reparation of scan line 31.
It should be noted that Step 1: the execution sequence of step 2 and step 3 does not do specific limit in the embodiment of the present invention
It is fixed, it can perform successively Step 1: step 2 and step 3, or, according to Step 1: the random order of step 2 and step 3
Perform.For in step 3, to the cutting position of public electrode wire, being not specifically limited, as long as first after cutting is public
Last pixel cell and adjacent pixel unit are attached by electrode wires, and do not receive the public electrode of other pixel cells
The purpose of the signal of line, in actually cutting, can be cut according to the particular location of public electrode wire in pixel cell
Cut, be not specifically limited herein.
In a specific embodiment, in the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention, for
Array base palte shown in Fig. 3, public electrode wire be arranged at it is between adjacent two scan lines and parallel with scan line, pixel electrode with
The public electrode wire has overlapping region on printing opacity direction, and public electrode wire has with data wire region arranged in a crossed manner to be engraved
Dummy section；Step S204 is by public electrode wire, pixel electrode and thin film transistor (TFT) in first pixel cell by fracture position
The data wire at two ends is electrically connected with, and grid and the company of scan line of the thin film transistor (TFT) in first pixel cell of disconnection
Region is connect, including：Cut the grid and the join domain of scan line of the thin film transistor (TFT) in first pixel cell；Welding respectively
The grid of thin film transistor (TFT) and the public electrode wire and pixel electrode in drain electrode, grid and source electrode, and first pixel cell
With overlapping region；Direction that public electrode wire is extended along public electrode wire and along extending perpendicular to public electrode wire
Direction is cut, and forms the first public electrode wire and the second public electrode wire, wherein, the first public electrode wire be used for by this
Pixel electrode in one pixel cell after welding is electrically connected with data wire, and the second public electrode wire is used for and other pictures
Public electrode wire in plain unit is electrical connected；Welding data wire has overlapping region with first public electrode wire.
Specifically, based on the array base palte shown in Fig. 3, when data wire breaks, the broken wire repair method of data wire
As follows, such as shown in Fig. 5 (a), the fracture position of data wire is the position shown in W, then is determined to fail to receive according to the position W of fracture
First pixel cell to the data line signal is pixel cell 03, then by pixel cell 03, data wire is repaired.
To the restorative procedure of data wire, including：
Step 1: the grid 331 and the join domain of scan line 03 of the thin film transistor (TFT) in cutting pixel cell 03；
Step 2: distinguishing the grid 331 of thin film transistor (TFT) and drain electrode 333, grid 331 and source electrode in welding pixel cell 03
332 so that the source electrode of thin film transistor (TFT) and drain electrode are electrically connected, and the public electrode wire 35 in welding pixel cell 03 and pixel electricity
Pole 34 has overlapping region P；
Step 3: by public electrode wire 35 extends along public electrode wire in pixel cell 03 direction (a1 institutes in Fig. 5 (b)
Show the direction of dotted line) and carry out along the direction (direction of dotted line shown in a2 in Fig. 5 (b)) that extends perpendicular to public electrode wire 35
Cutting, forms the first public electrode wire 351 and the second public electrode wire 352, wherein, the first public electrode wire 351 is used for should
Pixel electrode 34 in pixel cell 03 after welding is electrically connected with data wire 32, the second public electrode wire 352 be used for
Public electrode wire 35 in other pixel cells is electrical connected；
Wherein, public electrode wire 35 is cut so that public electrode wire, can in the reparation for completing data wire
To carry out the transmission of normal electrical signal by the second public electrode wire.
Step 4: welding data wire has overlapping region E, such as Fig. 5 with the first public electrode wire 351 in pixel cell 03
(b) shown in.
By Step 1: Step 2: Step 3: after step 4, the signal of the data wire after reparation is successively according to such as Fig. 5
(b) the first public electrode wire 351, pixel electrode 34, thin film transistor (TFT) in the direction of solid line shown in arrow, pixel cell 01
In source electrode, drain electrode, the data wire for finally transferring signals to the fracture position other end, so as to complete the reparation of data wire.
It should be noted that Step 1: Step 2: the execution sequence of step 3 and step 4 is not done in the embodiment of the present invention
It is specific to limit, it can perform successively Step 1: Step 2: step 3 and step 4, or, according to Step 1: Step 2: step
Three and step 4 random order perform.For in step 3, to the cutting position of public electrode wire, being not specifically limited, only
Last pixel cell and adjacent pixel unit are attached by the first public electrode wire after cutting, and do not receive it
The purpose of the signal of the public electrode wire of his pixel cell, can be according to common electrical in pixel cell in actually cutting
The particular location of polar curve is cut, and is not specifically limited herein.
Embodiment two
The array base palte provided based on embodiment one, the array base palte that embodiment two is provided also includes shading line.Other knots
Structure is identical.
Referring to Fig. 6, array base palte provided in an embodiment of the present invention, including a plurality of horizontally extending scan line 31,
The data wire 32 arranged in a crossed manner with scan line 31, one pixel cell 33 of data wire 32 arranged in a crossed manner and the besieged city of scan line 31,
Each pixel cell 33 includes the pixel electrode 34 for showing, and is provided with data wire 32 and the intersection region of scan line 31
Thin film transistor (TFT) 33, the grid of thin film transistor (TFT) 33 is electrically connected with adjacent scan line, the source electrode and data of thin film transistor (TFT) 33
Line 32 is electrically connected, and the drain electrode of thin film transistor (TFT) 33 is electrically connected with pixel electrode 34.Wherein, also set between two neighboring scan line 31
Public electrode wire 35 is equipped with, mutually insulated is set two-by-two for public electrode wire 35, pixel electrode 34, data wire 32 and scan line 31.
Wherein, public electrode wire 35 has overlapping region P with pixel electrode 34 on light direction, wherein, public electrode wire 35 and number
There is void region O according to the region arranged in a crossed manner of line 32.Source electrode and drain electrode in thin film transistor (TFT) is respectively with grid in light extraction side
There is overlapping region upwards, array base palte also includes：Be arranged between adjacent two data line 32, it is parallel with data wire 32 and with
The connected shading line 36 of public electrode wire electrical 35, shading line 36 has overlapping region with pixel electrode 34 on printing opacity direction
P’.Wherein, Fig. 6 is only so that shading line 36 is separately positioned on pixel electrode both sides as an example, but is not limited to each pixel cell and includes
The structure of two shading lines, can set shading line in the side of pixel cell, i.e., each pixel cell includes a shading line.
It is not specifically limited herein.
Wherein, shading line is electrically connected with public electrode wire, and shading line can be identical with public electrode wire material, and with layer system
Make.
Specifically, for the array base palte shown in Fig. 6 compared with the array base palte in embodiment one, only many shading lines
Set.Therefore, the broken string reparation side for the array base palte shown in method and Fig. 3 that the broken string in the array base palte shown in Fig. 6 is repaired
Method is similar, the difference is that only the processing to shading line.Therefore, it is different only pair from implementing a restorative procedure provided below
Place is described, and something in common is repeated no more.
In a specific embodiment, in the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention, for
Array base palte shown in Fig. 6 also includes：Be arranged between adjacent two data line, it is parallel with data wire and with public electrode wire electricity
Property connected shading line, shading line has overlapping region with pixel electrode on printing opacity direction；It is public in welding pixel cell
When electrode wires have overlapping region with pixel electrode, in addition to：Shading line in welding pixel cell has with pixel electrode
Overlapping region.
Specifically, only the difference in the restorative procedure of scan line is described.Based on the scan line shown in Fig. 4 (b)
Broken string repair mode in, the public electrode wire 35 in pixel cell 01 and pixel cell 02 has weight with pixel electrode 34
While folded region P carries out welding, the shading line 36 in pixel cell 01 and pixel cell 02 has weight with pixel electrode 34
Folded region P ' carries out welding, as shown in fig. 7, by the electrical connection of pixel electrode and shading line, adding the speed of signal transmission
Rate..
After being repaired to scan line, the scanning-line signal of the scan line after reparation is successively according to the arrow in such as Fig. 7
Grid, source electrode, pixel electrode 34, shading line 36, the first public electrode of thin film transistor (TFT) in the direction of head, pixel cell 01
The first public electrode wire 351, pixel electrode 34, shading line 36, the source electrode of thin film transistor (TFT), grid in line 351, pixel cell 02
Pole, is finally transferred signals in the scan line 31 on the right side of fracture position, so as to complete the reparation of scan line 31.
Specifically, only the difference in the restorative procedure of data wire is described.Based on the data wire shown in Fig. 5 (b)
Broken string repair mode in, when the public electrode wire 35 in welding pixel cell 03 and pixel electrode 34 have overlapping region P
While, the shading line 36 in welding pixel cell 03 has overlapping region P ' with pixel electrode 34, as shown in figure 8, passing through
The electrical connection of pixel electrode and shading line, adds the speed of signal transmission.
After being repaired to data wire, the scanning-line signal of the data wire after reparation is successively according to the arrow in such as Fig. 8
The first public electrode wire 351, shading line 36 in the direction of head, pixel cell 01, pixel electrode 34, the source of thin film transistor (TFT)
In pole, drain electrode, the data wire for finally transferring signals to the fracture position other end, so as to complete the reparation of data wire.
To sum up, in the broken wire repair method that array base palte is provided in embodiment two, add plain electric by using being arranged on
The shading line of pole both sides, carries out the transmission of signal, so that the effect of shading can not only be reached, and can improve signal in pixel electricity
Transmission rate in extremely, improves the success rate of signal transmission.
Embodiment three
The array base palte provided based on embodiment one, the array that the array base palte that embodiment three is provided is provided with embodiment one
Substrate difference is, when public electrode wire is not provided with void region with data wire intersection region.
Referring to Fig. 9, array base palte provided in an embodiment of the present invention, including：A plurality of horizontally extending scan line 31,
The data wire 32 arranged in a crossed manner with scan line 31, one pixel cell 33 of data wire 32 arranged in a crossed manner and the besieged city of scan line 31,
Each pixel cell 33 includes the pixel electrode 34 for showing, and is provided with data wire 32 and the intersection region of scan line 31
Thin film transistor (TFT) 33, the grid of thin film transistor (TFT) 33 is electrically connected with adjacent scan line, the source electrode and data of thin film transistor (TFT) 33
Line 32 is electrically connected, and the drain electrode of thin film transistor (TFT) 33 is electrically connected with pixel electrode 34.Wherein, also set between two neighboring scan line 31
Public electrode wire 35 is equipped with, mutually insulated is set two-by-two for public electrode wire 35, pixel electrode 34, data wire 32 and scan line 31.
Wherein, public electrode wire 35 has overlapping region P with pixel electrode 34 on light direction.
In a specific embodiment, in the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention, for
The structure of array base palte shown in Fig. 9, will be public when the region that public electrode wire and data wire intersect does not have void region
Electrode wires are cut, including：Cut in the direction that will be perpendicular to public electrode wire extension so that last pixel cell
It is only used for transmitting scanning signal with the public electrode wire in adjacent pixel unit, is disconnected with normal public electrode wire.
Specifically, only the difference in the broken wire repair method of scan line is described, referring to Figure 10, to common electrical
When polar curve is cut, including：
Step 1: by public electrode wire in pixel cell 01 and pixel cell 02 along extending perpendicular to public electrode
Cut in direction (the a1 directions in such as Figure 10) so that the public electrode wire 35 in pixel cell 01 and pixel cell 02 is only used
In transmission scanning signal, disconnected with normal public electrode wire.
In a specific embodiment, in the broken wire repair method of above-mentioned array base palte provided in an embodiment of the present invention, for
The structure of array base palte shown in Fig. 9, will be public when the region that public electrode wire and data wire intersect does not have void region
Electrode wires are cut, including：Public electrode wire in first pixel cell is cut along the direction that data wire extends so that
Public electrode wire in first pixel cell is only used for transmitting data-signal, is disconnected with normal public electrode wire.
Specifically, only the difference in the broken wire repair method of data wire is described, referring to Figure 11, to common electrical
When polar curve is cut, including：
Step 1: the direction (x1 directions in Figure 11) that the public electrode wire 35 in pixel cell 03 is extended along data wire 32
Cut, and because there is overlapping region to carry out welding for data wire and public electrode wire so that the first pixel cell 03
Public electrode wire 35 is electrically connected with the signal of data wire, therefore the public electrode wire in the left side to pixel cell 03 is cut
When, the left side in the region intersected in data wire and public electrode wire is cut, as shown in figure 11.
In a specific embodiment, the array base palte provided in the embodiment of the present invention one, embodiment two and embodiment three
In broken wire repair method, welding carries out welding using laser.Specifically, welding mode can also be carried out using other techniques
Welding, is not specifically limited herein, and when two film layers are carried out into welding, will can be melted with overlapping Zone Full
Connect, or welding will be carried out with overlapping subregion, be not specifically limited herein.
In a specific embodiment, the array base palte provided in the embodiment of the present invention one, embodiment two and embodiment three
In broken wire repair method, cutting is cut using laser.Specifically, cutting mode can also be carried out using other techniques
Cutting, is not specifically limited herein.
Based on same invention thought, the embodiment of the present invention additionally provides a kind of array base palte, including the embodiment of the present invention is carried
Array base palte after the broken wire repair method reparation of any of the above-described kind of array base palte supplied.The structure of array base palte may refer to reality
Apply example one, embodiment two and embodiment three, and the structure that embodiment two and embodiment three are combined.
Based on same invention thought, the embodiment of the present invention additionally provides a kind of display device, including the embodiment of the present invention is carried
Any of the above-described kind of the array base palte supplied.The display device can be：Display panel, mobile phone, tablet personal computer, television set, display
Any product or part with display function such as device, notebook computer, DPF, navigator.The implementation of the display device
The embodiment of above-mentioned array base palte is may refer to, part is repeated and repeats no more.
In summary, in the broken wire repair method of array base palte provided in an embodiment of the present invention, when it is determined that in array base palte
Behind the position of the broken string of scan line, according to broken position determine can receive the scanning-line signal last pixel cell and
Adjacent pixel unit adjacent with last described pixel cell and on the scanning line scanning direction；By it is described most
Thin film transistor (TFT), pixel electrode and public electrode wire in latter pixel cell, and the public affairs in the adjacent pixel unit
The scan line at the fracture position two ends is electrically connected with by common-battery polar curve, pixel cell and thin film transistor (TFT), and is cut respectively
Cut the source electrode and the join domain of data wire of thin film transistor (TFT) in last described pixel cell and adjacent pixel unit；When true
When determining in array base palte after the broken position of data wire, determined to fail to receive the data line signal according to the position of the fracture
First pixel cell；By public electrode wire, pixel electrode and thin film transistor (TFT) in first pixel cell by institute
The data wire for stating fracture position two ends is electrically connected with, and cuts the grid of the thin film transistor (TFT) in first pixel cell
Pole and the join domain of scan line.Therefore, in the embodiment of the present invention, for the reparation of scan line, using by two neighboring pixel
Thin film transistor (TFT), pixel electrode and public electrode wire in unit are electrically connected to each other, so as to realize the scan line at two ends of breaking
Electrical connection；For the reparation of data wire, using by public electrode wire, pixel electrode and the thin film transistor (TFT) in a pixel cell
It is connected with each other, so as to realize the data wire electrical connection at two ends of breaking.It can be seen that, the embodiment of the present invention is directed to data wire or scanning
The reparation of line, is to use the pixel cell sacrificed at broken position to be repaired for principle, reparation circuit is shorter, compared to existing
The method repaired in technology by using peripheral leads area, method provided in an embodiment of the present invention, it is to avoid prolonging for signal
Late, and the purpose of repair data line and scan line simultaneously has been reached, has improved the yield of array base palte.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (10)
1. a kind of broken wire repair method of array base palte, it is characterised in that this method includes：
When broken string phenomenon occur in scan line in array base palte and/or data wire, the position of the broken string fracture is determined；
When the broken string is scan line, determined that last of the scanning-line signal can be received according to the position of the fracture
Pixel cell and adjacent pixel unit adjacent with last described pixel cell and on the scanning line scanning direction；
By thin film transistor (TFT), pixel electrode and the public electrode wire in last described pixel cell, and it is described adjacent
Public electrode wire, pixel cell and thin film transistor (TFT) in pixel cell carry out the scan line at the fracture position two ends electrical
Connection, and the source electrode of thin film transistor (TFT) and data wire in last described pixel cell and adjacent pixel unit is respectively cut
Join domain；
When the broken string is data wire, determined to fail to receive first of the data line signal according to the position of the fracture
Pixel cell；
By public electrode wire, pixel electrode and thin film transistor (TFT) in first pixel cell by the fracture position two ends
Data wire be electrically connected with, and cut grid and the company of scan line of thin film transistor (TFT) in first pixel cell
Connect region.
2. according to the method described in claim 1, it is characterised in that the public electrode wire be arranged at adjacent two scan lines it
Between and it is parallel with the scan line, the pixel electrode and the public electrode wire have overlapping region, institute on printing opacity direction
Stating the region that public electrode wire intersects with the data wire has void region；
By thin film transistor (TFT), pixel electrode and the public electrode wire in last described pixel cell, and it is described adjacent
Public electrode wire, pixel cell and thin film transistor (TFT) in pixel cell carry out the scan line at the fracture position two ends electrical
Connection, and the source electrode and data wire of last described pixel cell and the thin film transistor (TFT) in adjacent pixel unit is respectively cut
Join domain, including：
The source electrode and data wire of last pixel cell and the thin film transistor (TFT) in adjacent pixel unit described in being respectively cut
Join domain；
The public electrode wire described in welding in the drain electrode and grid, and the pixel cell of thin film transistor (TFT) and pixel are electric respectively
Has overlapping region；
Direction that the public electrode wire is extended along the public electrode wire and extend along perpendicular to the public electrode wire
Direction cut, form the first public electrode wire and the second public electrode wire, wherein, first public electrode wire is used for
Pixel electrode after welding in last pixel cell and adjacent pixel unit is electrically connected with, described second
Public electrode wire is used to be electrical connected with the public electrode wire in other pixel cells.
3. method according to claim 2, it is characterised in that extend the public electrode wire along the public electrode wire
Direction and cut along the direction extended perpendicular to the public electrode wire, including：
The area that public electrode wire in last described pixel cell is intersected with the data wire away from the adjacent pixel unit
The void region in domain carries out first time cutting along the direction that data wire extends；
Public electrode wire in first pixel cell is intersected with the data wire away from last pixel cell
The void region in region carries out second along the direction that data wire extends and cut；
Public electrode wire between being cut positioned at first time cutting and second is entered along the direction that the public electrode wire extends
Row third time is cut.
4. according to the method described in claim 1, it is characterised in that the public electrode wire be arranged at adjacent two scan lines it
Between and it is parallel with the scan line, the pixel electrode and the public electrode wire have overlapping region, institute on printing opacity direction
Stating the region that public electrode wire intersects with the data wire has void region；
By public electrode wire, pixel electrode and thin film transistor (TFT) in first pixel cell by the fracture position two ends
Data wire be electrically connected with, and disconnect grid and the company of scan line of thin film transistor (TFT) in first pixel cell
Region is connect, including：
Cut the grid and the join domain of scan line of the thin film transistor (TFT) in first pixel cell；
Respectively in the grid and drain electrode, grid and source electrode, and first pixel cell of thin film transistor (TFT) described in welding
Public electrode wire has overlapping region with pixel electrode；
Direction that the public electrode wire is extended along the public electrode wire and extend along perpendicular to the public electrode wire
Direction cut, form the first public electrode wire and the second public electrode wire, wherein, first public electrode wire is used for
Pixel electrode after welding in first pixel cell is electrically connected with data wire, second public electrode wire is used
It is electrical connected in the public electrode wire in other pixel cells；
Data wire described in welding has overlapping region with first public electrode wire.
5. method according to claim 4, it is characterised in that extend the public electrode wire along the public electrode wire
Direction and cut along the direction extended perpendicular to the public electrode wire, including：
The void region in the region that the public electrode wire in first pixel cell is intersected with data wire is along the data
The direction of line extension carries out first time cutting；
The direction that public electrode wire in first pixel cell extends along the public electrode wire is cut for the second time
Cut.
6. the method according to any claims of claim 2-5, it is characterised in that the array base palte also includes：It is arranged at
Between adjacent two data line, shading line that is parallel with the data wire and being electrical connected with the public electrode wire, the screening
Light has overlapping region with the pixel electrode on printing opacity direction；
When public electrode wire in the welding pixel cell has overlapping region with pixel electrode, in addition to：
Shading line described in welding in pixel cell has overlapping region with pixel electrode.
7. the method according to claim 2 or 4, it is characterised in that the welding carries out welding using laser.
8. the method according to claim 2 or 4, it is characterised in that the cutting is cut using laser.
9. a kind of array base palte, it is characterised in that including the broken string using the array base palte described in any claims of claim 1-8
Array base palte after restorative procedure reparation.
10. a kind of display device, it is characterised in that including the array base palte described in claim 9.
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Application publication date: 20170818 |