CN107132712A - Array base palte method for repairing and mending, array base palte and liquid crystal display - Google Patents

Array base palte method for repairing and mending, array base palte and liquid crystal display Download PDF

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Publication number
CN107132712A
CN107132712A CN201710471354.8A CN201710471354A CN107132712A CN 107132712 A CN107132712 A CN 107132712A CN 201710471354 A CN201710471354 A CN 201710471354A CN 107132712 A CN107132712 A CN 107132712A
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CN
China
Prior art keywords
array base
base palte
electrode
pixel
pixel electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710471354.8A
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Chinese (zh)
Inventor
王笑笑
徐向阳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201710471354.8A priority Critical patent/CN107132712A/en
Priority to PCT/CN2017/095092 priority patent/WO2018232834A1/en
Publication of CN107132712A publication Critical patent/CN107132712A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136259Repairing; Defects
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting

Abstract

The array base palte method for repairing and mending that the present invention is provided includes the TFT switch for disconnecting the pixel electrode of pixel and the array base palte on array base palte;Connect the pixel electrode and public electrode wire on the array base palte.The present invention also provides a kind of array base palte.

Description

Array base palte method for repairing and mending, array base palte and liquid crystal display
Technical field
The present invention relates to LCDs technical field, more particularly to a kind of array base palte method for repairing and mending and array base palte with And liquid crystal display.
Background technology
In recent years, with low temperature polycrystalline silicon (Low Temperature Poly-Silicon, LTPS) as in array base palte The liquid crystal display panel of the semiconductor layer of thin film transistor (TFT) (Thin Film Transistor, TFT) is produced in middle and high end small size Obtain increasing application in product, the product such as smart mobile phone, tablet personal computer of multiple famous brand names uses LTPS liquid crystal Display panel.LTPS liquid crystal display panels have the advantages that high-resolution, reaction speed be fast, high brightness low-power consumption.
With the continuous progress of technology, the raising of resolution ratio proposes higher requirement to pixel aperture ratio.Accomplish bigger Aperture opening ratio, the line width line-spacing of each layer metal is compressed, allow space to give pixel openings area.Line-spacing compresses, adjacent with layer But with pixel electrode short circuit occurs for the risk increase of the metal line bridging of different potentials, typically public electrode, causes to pixel The influence of brightness is, it is necessary to do dim spotization processing to pixel.
The content of the invention
The present invention provides the array base palte method for repairing and mending that a kind of repairing efficiency is high, the time is short.
Array base palte method for repairing and mending of the present invention includes,
Disconnect the TFT switch of the pixel electrode of pixel and the array base palte on array base palte;
Connect the pixel electrode and public electrode wire on the array base palte.
Wherein, the pixel electrode is located at the pixel electrode and public electrode line overlap with public electrode wire communicating position Part.
Wherein, the patch cord of the drain electrode across TFT switch is preset in the pixel of array base palte, using laser along repairing Line irradiates the drain electrode of the TFT switch so that the pixel electrode of the pixel disconnects with the TFT.
Wherein, the pixel electrode includes main pixel electrode, sub-pixel electrode, main TFT switch and secondary TFT switch;It is described Sub-pixel electrode is connected with the drain electrode of described switch, and the TFT switch is the main TFT switch.
Wherein, the main pixel electrode region forms via, and the via connects the drain electrode of the main switch, described Patch cord is formed between the via and the main switch across the drain electrode.
Wherein, the public electrode wire is located at different layers with pixel electrode and current potential is identical.
Wherein, the public electrode is formed at the main pixel electrode and sub-pixel base part.
Wherein, the material of the pixel electrode and public electrode is ITO.
Array base palte of the present invention, including glass substrate, are formed at TFT switch, the public electrode wire of glass substrate And pixel electrode layer, the TFT include source electrode and drain electrode, the open circuit of the drain electrode and the pixel electrode, and pixel electrode with The public electrode wire connection.
Liquid crystal display of the present invention, including array base palte, color membrane substrates and display Jie for being held on color membrane substrates Matter layer, in addition to the backlight module of light source is provided for the liquid crystal display.
Array base palte method for repairing and mending of the present invention is only needed to when detecting public electrode with pixel electrode line short circuit, The drain electrode of the TFT switch is irradiated so that the pixel electrode of the pixel disconnects with the TFT and is along patch cord using laser Can, light leak occurs for the pixel that can not only repair array base palte, and dim spot etc. is abnormal;And the efficiency of repairing website is improved, it is low to swash Ray machine platform is lost, and for large batch of bad repairing, the repairing method can greatly reduce repairing time, low repairing cost.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the side structure schematic diagram of liquid crystal display of the present invention;
Fig. 2 is the pixel electrode overlooking the structure diagram of the array base palte of better embodiment of the present invention, belongs to perspective view, Different hatchings represents different layers;
Fig. 3 is array base palte method for repairing and mending flow chart of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made Embodiment, belongs to the scope of protection of the invention.Patterning patterning processes described herein include film forming, development, exposure, erosion The patterning processes such as quarter.
As shown in figure 1, it is the side structure schematic diagram of liquid crystal display in one embodiment of the invention, display panel includes Array base palte 11, display dielectric layer 12 and the color membrane substrates 13 being cascading.Also include carrying for the liquid crystal display For the backlight module of light source.Wherein, array base palte 11 is shown with being provided with multiple display element (not shown) on color membrane substrates 13 Multiple display elements are shown for producing the progress image of electric field driven display dielectric layer 12.In the present embodiment, display dielectric layer 12 For layer of liquid crystal molecule, that is to say in this implementation display panel 10 with liquid crystal display panel (Liquid Crystal Display, LCD illustrated exemplified by).
The array base palte 11 includes glass substrate, is formed at TFT switch, public electrode wire and the pixel electricity of glass substrate Pole layer, the TFT includes source electrode and drain electrode, and the array base palte also includes being formed at the grid of glass substrate, covers grid Gate insulator, the TFT switch is formed at gate insulator, covers the insulating barrier of TFT switch.Public electrode wire layer with Pixel electrode layer is sequentially formed in insulating barrier and by a flatness layer interval.
The array base palte 11 includes multiple pixel regions, a plurality of gate line and many datas being formed on the substrate Line, the gate line and data wire, which intersect, constitutes pixel.The pixel region is interpreted as a R sub-pixel area in a pixel Domain or B subpixel areas or G sub-pixel region.Illustrated in the present embodiment by taking a pixel region B as an example, it is each Pixel region B includes boss's pixel region and sub-sub-pixel region, and boss's pixel region is provided with boss's pixel electrode, described Sub-sub-pixel region is provided with sub-sub-pixel electrode.In the present embodiment, the pixel region also includes open region, and open region is printing opacity Area, refers to the corresponding position of pixel between the black matrix" that is set on array base palte horizontal plane color membrane substrates.
As shown in Fig. 2 the drain electrode and pixel electrode open circuit, and pixel electrode and public electrode wire company Connect.In the present embodiment, the part being connected with through hole that drains is separated by a patch cord, and the patch cord is formed for laser cutting Cut channel formed.
Specifically, the pixel includes pixel electrode, the pixel electrode includes main pixel electrode 21, sub-pixel electrode 22nd, main TFT switch 23 and secondary TFT switch 24;The sub-pixel electrode 22 is connected with the drain electrode of described switch 24, the TFT Switch is the main TFT switch.Described switch 24 is that sub-pixel electrode 22 provides voltage.The drain electrode 231 of the main switch It is breaking with the pixel electrode (main pixel electrode 21), and main pixel electrode 21) be connected with the public electrode wire 25.
The region of main pixel electrode 21 forms via 210, and the via 210 connects the drain electrode 231 of the main switch 23, Patch cord 233 is formed between the via 210 and the main switch 23 disconnects pixel electrode and public affairs across the drain electrode 231 1 Common-battery polar curve 25.The patch cord 233 is formed for the cut channel that laser cutting is formed.Wherein, the public electrode 25 and pixel Electrode is located at different layers and current potential is identical.The public electrode 25 is formed under the main pixel electrode 21 and sub-pixel electrode 22 Side.The material of the pixel electrode and public electrode and cabling is ITO.The pixel also includes auxiliary TFT switch, described auxiliary Help TFT switch to be located at main TFT switch and secondary TFT switch side, be connected with the sub-pixel electrode.
When detecting array base palte in the presence of open circuit, it will be drained by laser along the position of patch cord 233 with being connected Partial cut between the via of pixel, it is possible to be embodied as pixel charging using public electrode wire and pixel electrode, and by TFT Switch 23 disconnects with main pixel electrode, is charged without TFT switch 23, and what public electrode wire and pixel electrode were consistent Voltage.The array base palte can avoid the occurrence of the defect of dim spot by being once cut by laser repairing, it is ensured that quality reduces simultaneously Cost.
The application provides a kind of method for repairing and mending to above-mentioned array base palte, for making up in array base palte manufacturing process to picture The light leak of element generation, the defects such as 2 points.
Methods described comprises the following steps:
Fig. 2 and Fig. 3 are referred to, step S1 disconnects the pixel electrode of pixel and the array base palte on array base palte TFT;
Step S2, connects the pixel electrode and public electrode wire on the array base palte.
Specifically, presetting the patch cord 233 of the drain electrode 231 across TFT switch 23 in the pixel of array base palte.It is described to repair Mend the part that line 233 will drain between 231 and the via 210 of connection pixel 20 across the drain electrode 231.The patch cord 233 Can simultaneously it be formed with the insulating barrier of covering drain electrode 231.It can also be formed in public electrode or pixel electrode formation.Wherein, The pixel electrode is located at the pixel electrode and public electrode wire lap with public electrode wire communicating position, and the part can It can be located between boss's pixel region and sub-sub-pixel region, it is also possible to the position between pixel electrode and data wire.This reality Apply in example, pixel electrode and the public electrode wire communicating position is located at via between boss's pixel region and sub-sub-pixel region 210 sides.
When detect array base palte appearance some it is bad public caused by open circuit or open circuit when, using laser along repairing Line 233 irradiates the drain electrode 231 of the TFT switch so that the pixel electrode of the pixel disconnects with the TFT switch 23, then by picture Plain electrode is connected with public electrode wire.Foregoing open circuit fault also includes routing region and the pixel electrode short circuit of public electrode.Picture Plain electrode disconnects with TFT switch and connected with public electrode wire, so as to allow pixel electrode to keep with public electrode on color membrane substrates Current potential it is consistent so that do not deflected with the liquid crystal layer of the pixel electrode corresponding region, make the pixel keep dark-state;After single-point is dimmed The display effect of panel can't be influenceed.
Light leak occurs for the pixel that this method for repairing and mending can not only repair array base palte, and dim spot etc. is abnormal;And raising is repaiied Mend the efficiency of website, low laser board loss, for large batch of bad repairing, when the repairing method can greatly reduce repairing Between, low repairing cost.
Above disclosed is only a kind of preferred embodiment of the invention, can not limit the power of the present invention with this certainly Sharp scope, one of ordinary skill in the art will appreciate that all or part of flow of above-described embodiment is realized, and according to present invention power Profit requires made equivalent variations, still falls within and invents covered scope.

Claims (10)

1. a kind of array base palte method for repairing and mending, it is characterised in that methods described includes,
Disconnect the TFT switch of the pixel electrode of pixel and the array base palte on array base palte;
Connect the pixel electrode and public electrode wire on the array base palte.
2. a kind of array base palte method for repairing and mending as claimed in claim 1, it is characterised in that the pixel electrode and public electrode Line communicating position is located at the pixel electrode and public electrode wire lap.
3. a kind of array base palte method for repairing and mending as claimed in claim 1 or 2, it is characterised in that in the pixel of array base palte The patch cord of the default drain electrode across TFT switch, the drain electrode of the TFT switch is irradiated so that described using laser along patch cord The pixel electrode of pixel disconnects with the TFT.
4. a kind of array base palte method for repairing and mending as claimed in claim 3, it is characterised in that the pixel electrode includes main pixel Electrode, sub-pixel electrode, main TFT switch and secondary TFT switch;The sub-pixel electrode is connected with the drain electrode of described switch, institute It is the main TFT switch to state TFT switch.
5. a kind of array base palte method for repairing and mending as claimed in claim 4, it is characterised in that the main pixel electrode region Form via, the via connects the drain electrode of the main switch, the patch cord be formed at the via and the main switch it Between across the drain electrode.
6. array base palte method for repairing and mending as claimed in claim 1, it is characterised in that the public electrode wire and pixel electrode position In different layers and current potential is identical.
7. array base palte method for repairing and mending as claimed in claim 4, it is characterised in that the public electrode is formed at the main picture Plain electrode and sub-pixel base part.
8. array base palte method for repairing and mending as claimed in claim 1, it is characterised in that the material of the pixel electrode and public electrode Material is ITO.
9. a kind of array base palte, it is characterised in that including glass substrate, be formed at TFT switch, the public electrode wire of glass substrate And pixel electrode layer, the TFT include source electrode and drain electrode, the open circuit of the drain electrode and the pixel electrode, and pixel electrode with The public electrode wire connection.
10. a kind of liquid crystal display, it is characterised in that including the array base palte described in claim 9, color membrane substrates and be held on The display dielectric layer of color membrane substrates, in addition to the backlight module of light source is provided for the liquid crystal display.
CN201710471354.8A 2017-06-20 2017-06-20 Array base palte method for repairing and mending, array base palte and liquid crystal display Pending CN107132712A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201710471354.8A CN107132712A (en) 2017-06-20 2017-06-20 Array base palte method for repairing and mending, array base palte and liquid crystal display
PCT/CN2017/095092 WO2018232834A1 (en) 2017-06-20 2017-07-31 Method for repairing array substrate, array substrate and liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710471354.8A CN107132712A (en) 2017-06-20 2017-06-20 Array base palte method for repairing and mending, array base palte and liquid crystal display

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Publication Number Publication Date
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WO (1) WO2018232834A1 (en)

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CN107329296A (en) * 2017-08-25 2017-11-07 深圳市华星光电技术有限公司 Liquid crystal panel dim spot method for repairing and mending and array base-plate structure
CN108646476A (en) * 2018-03-22 2018-10-12 南京中电熊猫液晶显示科技有限公司 A kind of broken wire repair method of liquid crystal display panel
CN114023761A (en) * 2021-09-28 2022-02-08 惠科股份有限公司 Array substrate, display panel and defective pixel repairing method thereof

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Publication number Priority date Publication date Assignee Title
CN107329296A (en) * 2017-08-25 2017-11-07 深圳市华星光电技术有限公司 Liquid crystal panel dim spot method for repairing and mending and array base-plate structure
CN108646476A (en) * 2018-03-22 2018-10-12 南京中电熊猫液晶显示科技有限公司 A kind of broken wire repair method of liquid crystal display panel
CN108646476B (en) * 2018-03-22 2020-12-25 南京中电熊猫液晶显示科技有限公司 Broken line repairing method of liquid crystal panel
CN114023761A (en) * 2021-09-28 2022-02-08 惠科股份有限公司 Array substrate, display panel and defective pixel repairing method thereof

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Application publication date: 20170905