CN107329296A - Liquid crystal panel dim spot method for repairing and mending and array base-plate structure - Google Patents
Liquid crystal panel dim spot method for repairing and mending and array base-plate structure Download PDFInfo
- Publication number
- CN107329296A CN107329296A CN201710745222.XA CN201710745222A CN107329296A CN 107329296 A CN107329296 A CN 107329296A CN 201710745222 A CN201710745222 A CN 201710745222A CN 107329296 A CN107329296 A CN 107329296A
- Authority
- CN
- China
- Prior art keywords
- electrode
- liquid crystal
- array base
- crystal panel
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 230000002159 abnormal effect Effects 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000012528 membrane Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 230000008439 repair process Effects 0.000 abstract description 8
- 230000000903 blocking effect Effects 0.000 abstract description 6
- 238000004080 punching Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a kind of liquid crystal panel dim spot method for repairing and mending and array base-plate structure.The liquid crystal panel dim spot method for repairing and mending is after the display abnormal pixel of liquid crystal panel is detected, region where first corresponding to display abnormal pixel on array base palte cuts off the connection of the source electrode and data wire of corresponding thin film transistor (TFT), corresponding pixel electrode and middle public electrode wire are connected by thin film-forming method again, because the middle public electrode wire is equal with the current potential of color membrane substrates side public electrode, voltage difference of the array base palte and color membrane substrates of liquid crystal panel between display abnormal pixel region is 0 so that dark-state is presented in abnormal pixel；Due to pixel electrode with middle public electrode wire positioned at same layer, corresponding pixel electrode is connected with thin film-forming method and realizes that dim spotization is repaired with middle public electrode wire, compared to existing punching repair mode, process more simplifies, also it will not be disturbed by color blocking layer in COA type liquid crystal panels, it is possible to increase the success rate of mending to showing abnormal pixel.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of liquid crystal panel dim spot method for repairing and mending and array base palte knot
Structure.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display, TFT-
LCD TV, hand) are widely used in advantages such as its large scale, the flexible, low costs of highly integrated, powerful, technique
The fields such as mechanical, electrical brain, become the main flow of flat-panel monitor.
Liquid crystal display panel, abbreviation liquid crystal panel is TFT-LCD critical piece, generally by a color membrane substrates (Color
Filter, CF), a thin-film transistor array base-plate (Thin Film Transistor Array Substrate, TFT
Array Substrate) and a filling liquid crystal layer (Liquid Crystal Layer) between two substrates constituted, its work
It is to control the rotation of the liquid crystal molecule of liquid crystal layer by applying driving voltage on two panels glass substrate as principle, by backlight mould
The light of group reflects generation picture.
The effective display area domain of liquid crystal panel is combined by multiple pel arrays, and non-display area is mainly by peripheral gold
Category wiring is constituted.Referring to Fig. 1, the array base palte of available liquid crystal panel generally comprises the multiple pixel electrodes arranged in array
100th, correspondingly per one-row pixels electrode 100, the scan line 200 extended transversely of setting, each row pixel electrode 100 of correspondence are set
The data wire 300 extended longitudinally put, the array base palte side public electrode wire correspondingly set per one-row pixels electrode 100
(Com) the 400 and thin film transistor (TFT) T ' that sets of each pixel electrode 100 of correspondence.Wherein, scan line 200 is used to provide switch
Scanning signal, array base palte side public electrode wire 400 is used for the reference voltage for providing pixel voltage, and data wire 300 is used to provide
Data-signal；Thin film transistor (TFT) T ' grid connects corresponding scan line 200, and source electrode connects corresponding data wire 300, drain electrode and connected
Connect corresponding pixel electrode 100；Array base palte side public electrode wire 400 is arranged at pixel electrode below 100.
In the production process of array base palte, because production process is complicated, influenceed by production technology and power house environment, can
It can cause situations such as pixel has foreign matter or broken film, can so occur the display that human eye is easier to identify in display picture
Defect, has a strong impact on image display quality.Existing recovery technique is typically to do dim spotization processing to the abnormal pixel of display to come
Realize simple repair.As shown in figure 1, traditional liquid crystal panel dim spotization repairs means, it is that first cut-out shows abnormal pixel at Z
Corresponding thin film transistor (TFT) T ' source electrode and the connection of data wire 300, then connect pixel electrode by way of being punched at B
100 and array base palte side public electrode wire 400, it is 0 to make voltage difference of the upper and lower base plate between display abnormal pixel region,
So that dark-state is presented in display abnormal pixel.This traditional restorative procedure success rate is relatively low, and battle array is arranged on especially for color film
COA (Color Filter On Array) type product of row substrate-side, because color blocking layer is covered in the lower section of pixel electrode 100, as
Plain electrode 100 and the distance between array base palte side public electrode wire 400 are larger, easily because the interference of color blocking layer causes pixel
Electrode 100 and the connection failure of array base palte side public electrode wire 400, so as to cause repairing failure.
The content of the invention
It is an object of the invention to provide a kind of liquid crystal panel dim spot method for repairing and mending, it is possible to increase to display abnormal pixel
Success rate of mending, and simplify reparing process.
Another object of the present invention is to provide a kind of array base-plate structure, it is easy to the display abnormal pixel of liquid crystal panel
Carry out dim spot repairing.
To achieve the above object, present invention firstly provides a kind of liquid crystal panel dim spot method for repairing and mending, comprise the following steps：
Step S1, offer liquid crystal panel；
The liquid crystal panel includes array base palte and color membrane substrates；The array base palte is included in the multiple of array arrangement
Pixel electrode, the multi-strip scanning line extended transversely correspondingly set per one-row pixels electrode, each row pixel electrode of correspondence are set
The a plurality of data lines extended longitudinally put, a plurality of array base palte side public electrode wire correspondingly set per one-row pixels electrode,
Multiple thin film transistor (TFT)s that each pixel electrode of correspondence is set and covered above each data wire corresponding data line and with picture
Plain electrode is located at the middle public electrode wire of same layer；Color membrane substrates side public electrode is provided with the color membrane substrates；It is described
Middle public electrode wire is equal with the current potential of color membrane substrates side public electrode；
If n, m are positive integer, the grid connection nth bar scan line of line n m row thin film transistor (TFT)s, source electrode connection m
Data line, drain electrode connection line n m row pixel electrodes；
Step S2, the display abnormal pixel for detecting liquid crystal panel；
Step S3, the corresponding thin film transistor (TFT) of region cut-out first corresponded on array base palte where display abnormal pixel
Source electrode and data wire connection, then corresponding pixel electrode and middle public electrode wire are connected by thin film-forming method.
The step S3 cuts off the connection of the source electrode and data wire of corresponding thin film transistor (TFT) by radium-shine cutting technique.
The step S3 connects corresponding pixel electrode and middle public electrode using laser repair process deposits film forming
Line；And the material of the material and pixel electrode of film forming and middle public electrode wire is identical.
The material of the pixel electrode and middle public electrode wire is ITO.
The grid of the scan line, array base palte side public electrode wire and thin film transistor (TFT) is located on the first metal layer, institute
The source electrode for stating data wire and thin film transistor (TFT) is located on second metal layer with drain electrode.
The first metal layer and the material of second metal layer are one or more of stacking groups in copper, aluminium, molybdenum, titanium
Close.
The present invention also provides a kind of array base-plate structure, including multiple pixel electrodes for being arranged in array, correspondence are each
What what the multi-strip scanning line extended transversely that row pixel electrode is set, each row pixel electrode of correspondence were set extended longitudinally is more
Data line, a plurality of array base palte side public electrode wire correspondingly set per one-row pixels electrode, each pixel electrode of correspondence are set
Multiple thin film transistor (TFT)s for putting and corresponding data line is covered above each data wire and is located at same layer with pixel electrode
Middle public electrode wire；
If n, m are positive integer, the grid connection nth bar scan line of line n m row thin film transistor (TFT)s, source electrode connection m
Data line, drain electrode connection line n m row pixel electrodes.
The material of the pixel electrode and middle public electrode wire is ITO.
The grid of the scan line, array base palte side public electrode wire and thin film transistor (TFT) is located on the first metal layer, institute
The source electrode for stating data wire and thin film transistor (TFT) is located on second metal layer with drain electrode.
The first metal layer and the material of second metal layer are one or more of stacking groups in copper, aluminium, molybdenum, titanium
Close.
Beneficial effects of the present invention：A kind of liquid crystal panel dim spot method for repairing and mending that the present invention is provided, is detecting liquid crystal
After the display abnormal pixel of panel, the region where display abnormal pixel is first corresponded on array base palte cuts off corresponding film
The connection of the source electrode and data wire of transistor, then corresponding pixel electrode and middle public electrode wire are connected by thin film-forming method,
Because the middle public electrode wire is equal with the current potential of color membrane substrates side public electrode, the array base palte of liquid crystal panel and color film
Voltage difference of the substrate between display abnormal pixel region is 0 so that dark-state is presented in abnormal pixel；Due to pixel electricity
Pole is located at same layer with middle public electrode wire, and connect corresponding pixel electrode with thin film-forming method realizes with middle public electrode wire
Dim spotization is repaired, compared to existing punching repair mode, and process more simplifies, also will not be by color blocking layer in COA type liquid crystal panels
Interference, it is possible to increase to show abnormal pixel success rate of mending.A kind of array base-plate structure that the present invention is provided, each
The middle public electrode wire for covering corresponding data line and being located at same layer with pixel electrode is provided with above data wire, works as liquid crystal surface
When abnormal pixel occurs showing in plate, corresponding pixel electrode can be connected by thin film-forming method and middle public electrode wire realization is dark
Reveal repairing, it is easy to operate.
Brief description of the drawings
In order to be able to be further understood that the feature and technology contents of the present invention, refer to below in connection with the detailed of the present invention
Illustrate and accompanying drawing, however accompanying drawing only provide with reference to and explanation use, not for being any limitation as to the present invention.
In accompanying drawing,
Fig. 1 is the schematic diagram that traditional restorative procedure carries out dim spot reparation to liquid crystal panel；
Fig. 2 is the flow chart of the liquid crystal panel dim spot method for repairing and mending of the present invention；
Fig. 3 is the cross-sectional view of liquid crystal panel in liquid crystal panel dim spot method for repairing and mending of the invention；
Fig. 4 is the schematic diagram of the array base-plate structure of the present invention；
Fig. 5 is the step S3 of the liquid crystal panel dim spot method for repairing and mending of present invention schematic diagram.
Embodiment
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with being preferable to carry out for the present invention
Example and its accompanying drawing are described in detail.
Referring to Fig. 2, present invention firstly provides a kind of liquid crystal panel dim spot method for repairing and mending, comprising the following steps：
Step S1, offer liquid crystal panel LCD.
The liquid crystal panel is as shown in figure 3, including array base palte A and color membrane substrates C.
As shown in figure 4, it is in multiple pixel electrodes 1 of array arrangement, correspondingly per one-row pixels that the array base palte A, which includes,
What what the multi-strip scanning line 2 extended transversely that electrode 1 is set, each row pixel electrode 1 of correspondence were set extended longitudinally is a plurality of
Data wire 3, a plurality of array base palte side public electrode wire 4 correspondingly set per one-row pixels electrode 1, each pixel electrode 1 of correspondence
Multiple thin film transistor (TFT) T for setting and cover corresponding data line 3 in the top of each data wire 3 and be located at pixel electrode 1 same
One layer of middle public electrode wire 6.If n, m are positive integer, line n m row thin film transistor (TFT)s T grid G connection nth bar is swept
Line 2 (scan line 2 sorts from top to bottom) is retouched, source S connection m data lines 3 (data wire 3 sorts from left to right), drain D connect
Line n m row pixel electrode 1 is connect, the row thin film transistor (TFT) T of such as the 1st row the 1st grid G connects the 1st article of scan line 2, source S
Connect the 1st data line 3, the drain D connection row pixel electrode 1 of the 1st row the 1st；The row thin film transistor (TFT) T of 1st row the 2nd grid G connects
The 1st article of scan line 2 is connect, source S connects the 2nd data line 3, the drain D connection row pixel electrode 1 of the 1st row the 2nd；2nd row the 1st is arranged
Thin film transistor (TFT) T grid G connects the 2nd article of scan line 2, and source S connects the 1st data line 3, drain D and connects the 2nd row the 1st row
Pixel electrode 1；The rest may be inferred.
Specifically, the grid G of the scan line 2, array base palte side public electrode wire 4 and thin film transistor (TFT) T is located on
One metal level；The source S of the data wire 3 and thin film transistor (TFT) T is located on second metal layer with drain D.First metal
Layer and the material of second metal layer are one or more of stacked combinations in copper (Cu), aluminium (Al), molybdenum (Mo), titanium (Ti).
The pixel electrode 1 and the middle preferred indium tin oxide films (Indium of the other material of place layer of public electrode wire 6
Tin Oxide, ITO).
With reference to Fig. 3 and Fig. 4, color membrane substrates side public electrode 8, the middle common electrical are provided with the color membrane substrates C
Polar curve 6 is equal with the current potential of color membrane substrates C sides public electrode 8, so positioned at the middle public electrode wire 6 and color membrane substrates side
Dark-state can be presented in liquid crystal between public electrode 8, play a part of being in the light to the region of data wire 3.
Step S2, the display abnormal pixel for detecting liquid crystal panel LCD.
Step S3, as shown in E in Fig. 5, first pass through radium-shine cutting technique on array base palte A correspond to display extraordinary image
Region where element cuts off corresponding thin film transistor (TFT) T source S and the connection of data wire 3；For another example in Fig. 5 shown in F, utilize
ITO is deposited film forming to connect corresponding pixel electrode 1 and middle public electrode by vapour deposition principle by laser repair technique
Line 6, so as to show that the pixel electrode 1 corresponding to abnormal pixel is equal with the current potential of middle public electrode wire 6.So, liquid crystal surface
Voltage differences of the plate LCD array base palte A and color membrane substrates C between display abnormal pixel region is 0 so that abnormal pixel
Dark-state is presented, that is, has reached the effect of dim spotization repairing.
Corresponding pixel is connected with thin film-forming method positioned at same layer with middle public electrode wire 6 due to the pixel electrode 1
Electrode 1 realizes that dim spotization is repaired with middle public electrode wire 6, compared to existing punching repair mode, and process more simplifies, also not
It can be disturbed by color blocking layer in COA type liquid crystal panels, it is possible to increase the success rate of mending to showing abnormal pixel.
Referring to Fig. 4, the present invention also provides a kind of array base-plate structure, including the multiple pixel electrodes arranged in array
1st, each setting of row pixel electrode 1 of the multi-strip scanning line 2 extended transversely, correspondence correspondingly set per one-row pixels electrode 1
It is a plurality of data lines 3 that extends longitudinally, a plurality of array base palte side public electrode wire 4 correspondingly set per one-row pixels electrode 1, right
Answer multiple thin film transistor (TFT) T that each pixel electrode 1 is set and in each top of data wire 3 cover corresponding data line 3 and with
Pixel electrode 1 is located at the middle public electrode wire 6 of same layer.If n, m are positive integer, line n m row thin film transistor (TFT)s T's
Grid G connection nth bar scan line 2 (scan line 2 sorts from top to bottom), (data wire 3 is certainly left for source S connection m data lines 3
To right sequence), drain D connection line n m row pixel electrode 1, the row thin film transistor (TFT) T of such as the 1st row the 1st grid G connects the
1 scan line 2, source S connects the 1st data line 3, the drain D connection row pixel electrode 1 of the 1st row the 1st；The row film of 1st row the 2nd
Transistor T grid G connects the 1st article of scan line 2, and source S connects the 2nd data line 3, the drain D connection row pixel of the 1st row the 2nd
Electrode 1；The row thin film transistor (TFT) T of 2nd row the 1st grid G connects the 2nd article of scan line 2, and source S connects the 1st data line 3, drain electrode
The D connection row pixel electrodes 1 of the 2nd row the 1st；The rest may be inferred.
Specifically, the grid G of the scan line 2, array base palte side public electrode wire 4 and thin film transistor (TFT) T is located on
One metal level；The source S of the data wire 3 and thin film transistor (TFT) T is located on second metal layer with drain D.First metal
Layer and the material of second metal layer are one or more of stacked combinations in Cu, Al, Mo, Ti.
The pixel electrode 1 and the preferred ITO of the middle public electrode wire other material of 6 place layer.
The array base-plate structure of the present invention is applied to liquid crystal panel, and to middle public electrode wire 6 and liquid crystal panel
Color membrane substrates side public electrode applies equal current potential, then when abnormal pixel occurs showing in liquid crystal panel, just can pass through
The above method connects corresponding pixel electrode 1 using thin film-forming method and middle public electrode wire 6 realizes that dim spotization is repaired, it is easy to grasp
Make, success rate of mending is higher.
In summary, liquid crystal panel dim spot method for repairing and mending of the invention, is detecting the display extraordinary image of liquid crystal panel
After element, the region where display abnormal pixel is first corresponded on array base palte cuts off the source electrode and number of corresponding thin film transistor (TFT)
Corresponding pixel electrode and middle public electrode wire are connected according to the connection of line, then by thin film-forming method, because the centre is public
Electrode wires are equal with the current potential of color membrane substrates side public electrode, and array base palte and the color membrane substrates of liquid crystal panel are showing extraordinary image
Voltage difference between plain region is 0 so that dark-state is presented in abnormal pixel；Due to the pixel electrode and middle public electrode
Line is located at same layer, and connect corresponding pixel electrode with thin film-forming method realizes that dim spotization is repaired with middle public electrode wire, compares
Existing punching repair mode, process more simplifies, and will not also be disturbed by color blocking layer in COA type liquid crystal panels, it is possible to increase
Success rate of mending to showing abnormal pixel.The array base-plate structure of the present invention, is provided with covering phase above each data wire
Answer data wire and be located at the middle public electrode wire of same layer with pixel electrode, when there is showing abnormal pixel in liquid crystal panel,
Corresponding pixel electrode can be connected by thin film-forming method and realizes that dim spotization is repaired with middle public electrode wire, it is easy to is operated.
It is described above, for the person of ordinary skill of the art, can be with technique according to the invention scheme and technology
Other various corresponding changes and deformation are made in design, and all these changes and deformation should all belong to the claim of the present invention
Protection domain.
Claims (10)
1. a kind of liquid crystal panel dim spot method for repairing and mending, it is characterised in that comprise the following steps：
Step S1, offer liquid crystal panel (LCD)；
The liquid crystal panel (LCD) includes array base palte (A) and color membrane substrates (C)；The array base palte (A) includes being in array
Multiple pixel electrodes (1) of arrangement, the multi-strip scanning line (2) extended transversely, right correspondingly set per one-row pixels electrode (1)
Answer a plurality of data lines (3) extended longitudinally of each row pixel electrode (1) setting, the correspondingly setting per one-row pixels electrode (1)
A plurality of array base palte side public electrode wire (4), multiple thin film transistor (TFT)s (T) for setting of each pixel electrode (1) of correspondence and
Corresponding data line (3) is covered above each data wire (3) and is located at the middle public electrode wire of same layer with pixel electrode (1)
(6)；Color membrane substrates side public electrode (8) is provided with the color membrane substrates (C)；The middle public electrode wire (6) and color film
The current potential of substrate-side public electrode (8) is equal；
If n, m are positive integer, grid (G) the connection nth bar scan line (2) of line n m row thin film transistor (TFT) (T), source electrode
(S) connection m data lines (3), drain electrode (D) connection line n m row pixel electrode (1)；
Step S2, the display abnormal pixel for detecting liquid crystal panel (LCD)；
Step S3, the corresponding thin film transistor (TFT) of region cut-out that first (A) corresponds to where display abnormal pixel on array base palte
(T) connection of source electrode (S) and data wire (3), then corresponding pixel electrode (1) and middle common electrical are connected by thin film-forming method
Polar curve (6).
2. liquid crystal panel dim spot method for repairing and mending as claimed in claim 1, it is characterised in that the step S3 is cut by radium-shine
Cut technique and cut off the source electrode (S) of corresponding thin film transistor (TFT) (T) and the connection of data wire (3).
3. liquid crystal panel dim spot method for repairing and mending as claimed in claim 1, it is characterised in that the step S3 is repaiied using radium-shine
Process deposits film forming is mended to connect corresponding pixel electrode (1) and middle public electrode wire (6)；And the material and pixel of film forming
Electrode (1) and the material of middle public electrode wire (6) are identical.
4. liquid crystal panel dim spot method for repairing and mending as claimed in claim 3, it is characterised in that the pixel electrode (1) is with
Between public electrode wire (6) material be ITO.
5. liquid crystal panel dim spot method for repairing and mending as claimed in claim 1, it is characterised in that the scan line (2), array base
The grid (G) of plate side public electrode wire (4) and thin film transistor (TFT) (T) is located on the first metal layer, the data wire (3) and thin
The source electrode (S) of film transistor (T) is located on second metal layer with drain electrode (D).
6. liquid crystal panel dim spot method for repairing and mending as claimed in claim 5, it is characterised in that the first metal layer and second
The material of metal level is one or more of stacked combinations in copper, aluminium, molybdenum, titanium.
7. a kind of array base-plate structure, it is characterised in that each including multiple pixel electrodes (1) for being arranged in array, correspondence
The multi-strip scanning line (2) extended transversely that row pixel electrode (1) is set, each row pixel electrode (1) of correspondence set along vertical
To a plurality of data lines (3) of extension, correspondingly per one-row pixels electrode (1) set a plurality of array base palte side public electrode wire (4),
Multiple thin film transistor (TFT)s (T) and respective counts are covered above each data wire (3) that each pixel electrode (1) of correspondence is set
It is located at the middle public electrode wire (6) of same layer according to line (3) and with pixel electrode (1)；
If n, m are positive integer, grid (G) the connection nth bar scan line (2) of line n m row thin film transistor (TFT) (T), source electrode
(S) connection m data lines (3), drain electrode (D) connection line n m row pixel electrode (1).
8. array base-plate structure as claimed in claim 7, it is characterised in that the pixel electrode (1) and middle public electrode
The material of line (6) is ITO.
9. array base-plate structure as claimed in claim 7, it is characterised in that the scan line (2), array base palte side common electrical
The grid (G) of polar curve (4) and thin film transistor (TFT) (T) is located on the first metal layer, the data wire (3) and thin film transistor (TFT)
(T) source electrode (S) is located on second metal layer with drain electrode (D).
10. array base-plate structure as claimed in claim 9, it is characterised in that the first metal layer and second metal layer
Material is one or more of stacked combinations in copper, aluminium, molybdenum, titanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710745222.XA CN107329296B (en) | 2017-08-25 | 2017-08-25 | Liquid crystal panel dark spot repairing method and array substrate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710745222.XA CN107329296B (en) | 2017-08-25 | 2017-08-25 | Liquid crystal panel dark spot repairing method and array substrate structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107329296A true CN107329296A (en) | 2017-11-07 |
| CN107329296B CN107329296B (en) | 2020-05-29 |
Family
ID=60228239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710745222.XA Active CN107329296B (en) | 2017-08-25 | 2017-08-25 | Liquid crystal panel dark spot repairing method and array substrate structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107329296B (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107703657A (en) * | 2017-11-23 | 2018-02-16 | 武汉华星光电半导体显示技术有限公司 | Array base palte defect mending method |
| CN108646476A (en) * | 2018-03-22 | 2018-10-12 | 南京中电熊猫液晶显示科技有限公司 | A kind of broken wire repair method of liquid crystal display panel |
| CN108828801A (en) * | 2018-06-20 | 2018-11-16 | 深圳市华星光电半导体显示技术有限公司 | The production method of CF substrate-side common electrode of ITO |
| CN109375431A (en) * | 2018-10-26 | 2019-02-22 | 深圳市华星光电技术有限公司 | A kind of display panel and display device |
| CN109613771A (en) * | 2018-12-29 | 2019-04-12 | 深圳市华星光电技术有限公司 | Liquid crystal display panel dim spot restorative procedure |
| CN109741699A (en) * | 2019-01-22 | 2019-05-10 | 深圳市华星光电技术有限公司 | Detection device for display panel |
| CN110133927A (en) * | 2019-04-30 | 2019-08-16 | 深圳市华星光电半导体显示技术有限公司 | Display panel and its restorative procedure |
| CN110262146A (en) * | 2019-06-17 | 2019-09-20 | 深圳市华星光电技术有限公司 | The cross hairs restorative procedure and display panel of display panel |
| CN110376810A (en) * | 2019-06-10 | 2019-10-25 | 惠科股份有限公司 | Display panel, bright spot repairing method of display panel and display device |
| CN110797354A (en) * | 2019-11-15 | 2020-02-14 | Tcl华星光电技术有限公司 | Array substrate, repairing method thereof and display device |
| CN113219746A (en) * | 2021-04-21 | 2021-08-06 | 惠科股份有限公司 | Array substrate, display panel and shading treatment method |
| CN113703237A (en) * | 2021-08-18 | 2021-11-26 | Tcl华星光电技术有限公司 | Array substrate, dark spot repairing method of array substrate and display panel |
| CN113805395A (en) * | 2021-09-29 | 2021-12-17 | Tcl华星光电技术有限公司 | Array substrate and display panel |
| CN114839801A (en) * | 2022-04-11 | 2022-08-02 | 滁州惠科光电科技有限公司 | Bright spot repairing method of liquid crystal panel and liquid crystal panel |
| JP7577072B2 (en) | 2021-09-29 | 2024-11-01 | ティーシーエル チャイナスター オプトエレクトロニクス テクノロジー カンパニー リミテッド | Array substrate and display panel |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050073661A (en) * | 2004-01-09 | 2005-07-18 | 비오이 하이디스 테크놀로지 주식회사 | Apparatus for preventing disclination of liquid crystal |
| KR20080053832A (en) * | 2006-12-11 | 2008-06-16 | 삼성전자주식회사 | Liquid crystal display device and method of repairing bad pixels thereof |
| CN101510016A (en) * | 2009-04-03 | 2009-08-19 | 友达光电股份有限公司 | Flat display panel, optoelectronic device and bright point repairing method thereof |
| CN102768438A (en) * | 2011-05-02 | 2012-11-07 | 三星电子株式会社 | Liquid crystal display device |
| CN104460152A (en) * | 2014-12-10 | 2015-03-25 | 深圳市华星光电技术有限公司 | Array substrate and display device |
| CN104730790A (en) * | 2015-03-25 | 2015-06-24 | 深圳市华星光电技术有限公司 | Liquid crystal display device, liquid crystal displayer and manufacturing method and dark spot working method of liquid crystal displayer |
| CN104777635A (en) * | 2015-04-08 | 2015-07-15 | 深圳市华星光电技术有限公司 | Method for repairing pixel defect of liquid crystal panel and liquid crystal panel |
| CN104793366A (en) * | 2015-04-23 | 2015-07-22 | 深圳市华星光电技术有限公司 | Liquid crystal panel subjected to bright point repair and bright point repair method thereof |
| CN104849883A (en) * | 2015-05-20 | 2015-08-19 | 武汉华星光电技术有限公司 | Bright point repair method and device for liquid crystal panel and liquid crystal panel with bright points repaired |
| CN205384428U (en) * | 2016-02-18 | 2016-07-13 | 昆山龙腾光电有限公司 | LCD panel |
| CN105974705A (en) * | 2016-07-25 | 2016-09-28 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method and repairing method for array substrate, display panel and display device |
| CN107132712A (en) * | 2017-06-20 | 2017-09-05 | 深圳市华星光电技术有限公司 | Array base palte method for repairing and mending, array base palte and liquid crystal display |
-
2017
- 2017-08-25 CN CN201710745222.XA patent/CN107329296B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050073661A (en) * | 2004-01-09 | 2005-07-18 | 비오이 하이디스 테크놀로지 주식회사 | Apparatus for preventing disclination of liquid crystal |
| KR20080053832A (en) * | 2006-12-11 | 2008-06-16 | 삼성전자주식회사 | Liquid crystal display device and method of repairing bad pixels thereof |
| CN101510016A (en) * | 2009-04-03 | 2009-08-19 | 友达光电股份有限公司 | Flat display panel, optoelectronic device and bright point repairing method thereof |
| CN102768438A (en) * | 2011-05-02 | 2012-11-07 | 三星电子株式会社 | Liquid crystal display device |
| CN104460152A (en) * | 2014-12-10 | 2015-03-25 | 深圳市华星光电技术有限公司 | Array substrate and display device |
| CN104730790A (en) * | 2015-03-25 | 2015-06-24 | 深圳市华星光电技术有限公司 | Liquid crystal display device, liquid crystal displayer and manufacturing method and dark spot working method of liquid crystal displayer |
| CN104777635A (en) * | 2015-04-08 | 2015-07-15 | 深圳市华星光电技术有限公司 | Method for repairing pixel defect of liquid crystal panel and liquid crystal panel |
| CN104793366A (en) * | 2015-04-23 | 2015-07-22 | 深圳市华星光电技术有限公司 | Liquid crystal panel subjected to bright point repair and bright point repair method thereof |
| CN104849883A (en) * | 2015-05-20 | 2015-08-19 | 武汉华星光电技术有限公司 | Bright point repair method and device for liquid crystal panel and liquid crystal panel with bright points repaired |
| CN205384428U (en) * | 2016-02-18 | 2016-07-13 | 昆山龙腾光电有限公司 | LCD panel |
| CN105974705A (en) * | 2016-07-25 | 2016-09-28 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method and repairing method for array substrate, display panel and display device |
| CN107132712A (en) * | 2017-06-20 | 2017-09-05 | 深圳市华星光电技术有限公司 | Array base palte method for repairing and mending, array base palte and liquid crystal display |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019100411A1 (en) * | 2017-11-23 | 2019-05-31 | 武汉华星光电半导体显示技术有限公司 | Array substrate defect repair method |
| CN107703657A (en) * | 2017-11-23 | 2018-02-16 | 武汉华星光电半导体显示技术有限公司 | Array base palte defect mending method |
| CN108646476A (en) * | 2018-03-22 | 2018-10-12 | 南京中电熊猫液晶显示科技有限公司 | A kind of broken wire repair method of liquid crystal display panel |
| CN108828801A (en) * | 2018-06-20 | 2018-11-16 | 深圳市华星光电半导体显示技术有限公司 | The production method of CF substrate-side common electrode of ITO |
| CN109375431A (en) * | 2018-10-26 | 2019-02-22 | 深圳市华星光电技术有限公司 | A kind of display panel and display device |
| CN109613771B (en) * | 2018-12-29 | 2021-07-23 | 苏州华星光电技术有限公司 | Method for repairing dark spots of liquid crystal panel |
| CN109613771A (en) * | 2018-12-29 | 2019-04-12 | 深圳市华星光电技术有限公司 | Liquid crystal display panel dim spot restorative procedure |
| CN109741699A (en) * | 2019-01-22 | 2019-05-10 | 深圳市华星光电技术有限公司 | Detection device for display panel |
| CN110133927A (en) * | 2019-04-30 | 2019-08-16 | 深圳市华星光电半导体显示技术有限公司 | Display panel and its restorative procedure |
| CN110376810A (en) * | 2019-06-10 | 2019-10-25 | 惠科股份有限公司 | Display panel, bright spot repairing method of display panel and display device |
| CN110262146A (en) * | 2019-06-17 | 2019-09-20 | 深圳市华星光电技术有限公司 | The cross hairs restorative procedure and display panel of display panel |
| CN110797354A (en) * | 2019-11-15 | 2020-02-14 | Tcl华星光电技术有限公司 | Array substrate, repairing method thereof and display device |
| CN113219746A (en) * | 2021-04-21 | 2021-08-06 | 惠科股份有限公司 | Array substrate, display panel and shading treatment method |
| CN113703237A (en) * | 2021-08-18 | 2021-11-26 | Tcl华星光电技术有限公司 | Array substrate, dark spot repairing method of array substrate and display panel |
| CN113805395A (en) * | 2021-09-29 | 2021-12-17 | Tcl华星光电技术有限公司 | Array substrate and display panel |
| WO2023050471A1 (en) * | 2021-09-29 | 2023-04-06 | Tcl华星光电技术有限公司 | Array substrate and display panel |
| JP7577072B2 (en) | 2021-09-29 | 2024-11-01 | ティーシーエル チャイナスター オプトエレクトロニクス テクノロジー カンパニー リミテッド | Array substrate and display panel |
| CN114839801A (en) * | 2022-04-11 | 2022-08-02 | 滁州惠科光电科技有限公司 | Bright spot repairing method of liquid crystal panel and liquid crystal panel |
| CN114839801B (en) * | 2022-04-11 | 2023-10-24 | 滁州惠科光电科技有限公司 | Method for repairing bright spots of liquid crystal panel and liquid crystal panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107329296B (en) | 2020-05-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107329296A (en) | Liquid crystal panel dim spot method for repairing and mending and array base-plate structure | |
| JP6734396B2 (en) | Method for repairing disconnection of TFT substrate | |
| CN101776808B (en) | Liquid crystal display array base plate and patching method thereof | |
| CN101295090B (en) | LCD device | |
| KR101338115B1 (en) | Low resistance wiring and method of fabricating liquid crystal display device using the same | |
| CN1648757A (en) | Active matrix substrate and display device | |
| CN1716067A (en) | Liquid crystal display device and manufacturing method thereof | |
| KR101318305B1 (en) | Array substrate and display apparatus using the same | |
| JP2005316489A (en) | Display apparatus and method for repairing defect generating therein | |
| WO2007034596A1 (en) | Active matrix substrate, display, television set, method for producing active matrix substrate, and method for manufacturing display | |
| WO2006080129A1 (en) | Display device, liquid crystal display device, and method for manufacturing the display device | |
| JP2007298791A (en) | Liquid crystal display device and method for repairing its defect | |
| US7995156B2 (en) | Method of manufacturing a display substrate using a laser to remove test lines from the substrate without cutting the substrate | |
| EP0512840A2 (en) | An active matrix display device | |
| CN105974705B (en) | Array substrate, manufacturing method and repairing method thereof, display panel and display device | |
| CN1790140A (en) | Thin film transistor array panel and repairing method therefor | |
| US20080266474A1 (en) | Liquid crystal panel and liquid crystal display using the same | |
| CN108646476A (en) | A kind of broken wire repair method of liquid crystal display panel | |
| US7253851B2 (en) | Pixel and method for pixel repair | |
| WO2001061405A1 (en) | Liquid-crystal display, method of correcting pixels and method of driving liquid-crystal display | |
| CN108121116A (en) | A kind of alignment method of liquid crystal display panel | |
| US20160370678A1 (en) | Liquid crystal display device and production method thereof | |
| KR20080055669A (en) | Method for repairing liquid crystal display panel | |
| CN100593750C (en) | Liquid crystal display device and array substrate rehabilitation method | |
| CN1567076A (en) | Process for restoring LCD containing foreign matter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |