CN103984174B - Pixel structure and manufacturing method and repair method thereof - Google Patents
Pixel structure and manufacturing method and repair method thereof Download PDFInfo
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- CN103984174B CN103984174B CN201410226425.4A CN201410226425A CN103984174B CN 103984174 B CN103984174 B CN 103984174B CN 201410226425 A CN201410226425 A CN 201410226425A CN 103984174 B CN103984174 B CN 103984174B
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Abstract
The invention discloses a dual-gate driving pixel structure with a line defect repair function. The pixel structure comprises scanning lines, data lines, pixel electrodes and thin-film transistor switches. Two sides of each data line are connected with the pixel electrodes of one pixel through the thin-film transistor switches. Gates of the transistor switches are respectively connected with the scanning lines on the upper side and the lower side. H-shaped repair lines are designed between the upper and lower rows of the pixels. By being combined with a line defect repair method, the breakage defects of the scanning lines can be repaired, and breakage defects of the scanning lines and the data lines and short circuit line defects of the scanning lines and the data lines can be repaired as well.
Description
Technical field
The present invention relates to flat display field, more particularly, to a kind of dot structure of utilization liquid crystal display and its manufacturer
Method and restorative procedure.
Background technology
Thin Film Transistor-LCD (thin film transistor-liquid crystal display, below
Abbreviation tft-lcd), there is lightweight, thickness of thin and low-power consumption, be widely used in the electricity such as TV, mobile phone, display
In sub- product.In order to reduce the number driving ic, develop the tft-lcd of low-cost high-quality, generally adopt in prior art
Double grid (dual gate) technology humanized pixel, is shown with shortening pixel charging time and realizing the picture of low-cost high-quality.
Using double grid technology dot structure schematic diagram as shown in figure 1, in same one-row pixels, along data wire 12 about
It is dispersed with two pixel cells such as p13, p14, each pixel cell is by scan line 11, data wire 12, pixel electrode 13 and thin
Film transistor 14 is constituted, and in the pixel cell of data wire 12 both sides, pixel electrode 13 all passes through the source electricity of thin film transistor (TFT) 14
Pole 142 is connected to same data lines 12, and the grid of two transistors 14 is connected to and carries out on upper and lower different scanning line 11 simultaneously
Pixel driver.In order to prevent liquid crystal aging under DC electric field, need the charge polarity at liquid crystal two ends is constantly changed, real
The point upset of existing pixel, row upset and frame turn over, and in order to improve the quality of whole display picture, pixel overturns type of drive
Slowly become the main way of current display.
Fig. 2 is the dot structure that a kind of existing bigrid drives framework.Positioned at the bottom is scan line 21, common electrical
The grid 241 of pole 26 and thin film transistor (TFT) 24, is partly leading of thin film transistor (TFT) 24 above scan line 21 and public electrode 26
Body channel layer 244.Across transparent megohmite insulant between scan line 21 and semiconductor channel layer 244.In semiconductor channel layer
244 top is data wire 22, the drain electrode 242 of thin film transistor (TFT) 24, the source electrode 243 of thin film transistor (TFT) 24.In thin film transistor (TFT)
The top of 24 drain electrode 242 is contact hole 25, contact hole 25 be drain electrode 242 top transparent insulation material layer in dig out come one
Individual hole.The transparent pixel electrode 23 positioned at top is made to be electrically connected with drain electrode realization by contact hole 25.
When making the pel array of double-gate structure, due to the shadow of the techniques such as the film forming in manufacturing process, development, etching
Sound, and the impact of environment, scan line data line is susceptible to short circuit or open circuit, leads to line defect.Size with panel
Bigger, pixel resolution is higher, adds the restriction of the factors such as aperture opening ratio, and the live width of scan line data line narrows it is easier to send out
Raw line defect.In order to avoid the qualification rate that panel is led to due to line defect declines, need line defect is repaired.
At present, the restorative procedure of line defect mainly pass through ring winding around Display panel area and its with pixel in join
The reparation backup wirings of set are repaired.Because the cabling circuit of the ring winding around Display panel area is long, cause input letter
Number delay distortion, repairing effect is not good enough.
Content of the invention
The purpose of the present invention is the problem existing for prior art, provides a kind of use of the reparation by dot structure within
Distribution realizes the broken string reparation of distribution in dot structure.
The present invention provides a kind of dot structure, comprising: a substrate；One the first metal layer, is configured on this substrate, wherein
This first metal layer includes: four scan lines 31；Four grids 341, are electrically connected with those scan lines 31；Two public electrodes 36；
One gate insulator, is configured on this substrate and covers this first metal layer；Semiconductor channel layer 344, is configured at this grid
On insulating barrier；One second metal layer, is configured on this semiconductor channel layer 344, wherein this second metal layer includes: two data wires
32, interlock with those scan lines 31；Four source electrodes 343, are each electrically connected with this data wire 32；Four drain electrodes 342；Repair line 37,
It is set to H type and forms H type repair line 37, horizontal arrangement is between two adjacent scanning lines, and described H type repair line extends about 37
Line is respectively at partly overlapping with described scan line；One protective layer, is configured on this substrate and covers this second metal layer；Four contacts
Hole 35, be respectively arranged at described drain electrode 342 top, described contact hole 35 be drain electrode 342 top described protective layer in dig out
The hole come；And four pixel electrodes 33, it is configured on this protective layer, and drain 342 by those contact holes 35 with those
It is electrically connected with；Wherein, described two adjacent scanning lines are located at the same side of described pixel electrode.
The present invention also provides a kind of pixel structure preparation method, and it comprises the following steps:
A. on substrate, carry out the film-forming process of the first metal layer, by the coating of photoresist, exposure, development, etching,
Peel off, form the grid 341 of scan line 31, public electrode 36 and thin film transistor (TFT).Coat a gate insulator 39 above it；
B. above this gate insulator, carry out the film-forming process of semiconductor layer, then by the coating of photoresist, exposure
Light, development, etching, the stripping of photoresist, form semiconductor channel layer 344；
C. above semiconductor channel layer 344, carry out the film-forming process of second metal layer, then by the painting of photoresist
The techniques such as cloth, exposure, the development of photoresist, etching, the stripping of photoresist, form data wire 32, the drain electrode of thin film transistor (TFT)
342nd, the source electrode 343 of thin film transistor (TFT), H type repair line 37, coats one layer of passivation protection layer 38 above it, wherein, this H type is repaired
Line 37 horizontal arrangement between two adjacent scanning lines, and described H type repair line about 37 extended line respectively at described scan line
Partly overlap；
D. above this passivation protection layer, carry out the hole etching technology of contact hole, by the coating of photoresist, exposure, show
Shadow, etching, stripping, form contact hole 35；
E. above this contact hole 35, carry out the film-forming process of transparency conducting layer, then by the coating of photoresist, exposure
Light, development, etching, stripping, form pixel electrode 33, and this pixel electrode 33 passes through this contact hole 35, realizes electricity with this drain electrode 342
Learn and connect；Wherein, described two adjacent scanning lines are configured at the same side of described pixel electrode.
A kind of restorative procedure of dot structure is provided, it comprises the following steps in one embodiment of the invention:
C., when scan line disconnects, in the scan line that open circuit occurs, this H type repair line finding breakpoint both sides is swept with this
Retouch the region of line overlap, carry out laser welding in this overlapping region of breakpoint both sides respectively；
D., after this laser welding, the voltage signal near scanning-line signal input side for the scan line breakpoint passes through this h
After type repair line, it is transferred to the opposite side of scan line breakpoint, the voltage signal realizing this scan line breakpoint both sides is consistent.
Preferably, described public electrode 36 is arranged on the centrage of described pixel electrode 33, and respectively at described data
Line 32, pixel electrode 33 partly overlap respectively.
A kind of present invention also offers dot structure, a comprising: substrate；One the first metal layer, is configured on this substrate,
Wherein this first metal layer includes: four scan lines 41；Four grids 441, are electrically connected with those scan lines 41；Two public electrodes
46；Repair liner 48, be configured between two adjacent described scan lines；One gate insulator, is configured on this substrate and covers this
The first metal layer；Semiconductor channel layer 444, is configured on this gate insulator；One second metal layer, is configured at this quasiconductor
On layer, and below this second metal layer, all there is this semiconductor channel layer 444, wherein this second metal layer includes: two data wires 42,
Interlock with those scan lines 41；Four source electrodes 443, are each electrically connected with this data wire 42；Four drain electrodes 442；Repair line 47, setting
Form " rich " font repair line 47 for " rich " font, there are three H type repair lines of transverse horizontal configuration, it is located at biphase respectively
Between adjacent scan line, and this upper and lower extended line of H type repair line, respectively at partly overlapping with described scan line, has vertically parallel setting
It is placed in the vertical repair line between two this data wire adjacent；One protective layer, is configured on this substrate and covers this second metal layer；
Four contact holes 45, are respectively arranged at the top of described drain electrode 442, and described contact hole 45 is the described protective layer of drain electrode 442 top
In dig out come a hole；And four pixel electrodes 33, it is configured on this protective layer, and by those contact holes 35 and those leakages
Pole 342 is electrically connected with；Wherein, this two adjacent scanning lines is located at the same side of described pixel electrode, and this reparation liner 48 with should
Data wire, this repair line 47 partly overlap respectively, should " rich " font repair line 47 vertical line be arranged at two this pixel electrode adjacent it
Between.The present invention also provides a kind of manufacture method of dot structure, and it comprises the following steps:
A. on substrate, carry out the film-forming process of the first metal layer, then by the coating of photoresist, exposure, development, quarter
Erosion, stripping, form scan line 41, public electrode 46, the grid 441 of thin film transistor (TFT), repair liner 48, coat one above it
Gate insulator；
B. above this gate insulator, carry out the film-forming process of semiconductor layer, then by the coating of photoresist, exposure
Light, development, etching, stripping, form semiconductor channel layer 444；
C. above this semiconductor channel layer 444, carry out the film-forming process of second metal layer, then pass through photoresist
Coating, exposure, development, etching, peel off, formed data wire 42, the drain electrode 442 of thin film transistor (TFT), source electrode 443,
" rich " font repair line 47, coats a protective layer above it, wherein, is set to " rich " font and forms " rich " font
Repair line 47, has three H type repair lines of transverse horizontal configuration, and it is located between two adjacent scanning lines respectively, and this H type is repaiied
The upper and lower extended line of multiple line, respectively at being partly overlapped with described scan line, is had and is vertically set in parallel between two this data wire adjacent
Vertical repair line；
D. above this protective layer, carry out the hole etching technology of contact hole, by the coating of photoresist, exposure, development, carve
Erosion, stripping, form contact hole 45；
E., above this contact hole 45, carry out the film-forming process of transparency conducting layer, by the coating of photoresist, exposure,
Development, etching, stripping, form pixel electrode 43, and this pixel electrode 43 passes through this contact hole 45, realizes electricity with this drain electrode 442
Connect；
Wherein, this two adjacent scanning lines is located at the same side of described pixel electrode, and this reparation liner 48 and this data wire,
This repair line 47 partly overlaps respectively, should " rich " font repair line 47 vertical line be arranged between two this pixel electrode adjacent.
A kind of restorative procedure of dot structure is provided, it comprises the following steps in one embodiment of the invention:
C., when scan line disconnects, in the scan line that open circuit occurs, find the H type near breakpoint for " rich " the font repair line
Repair line, and this H type repair line is cut out from " rich " font repair line the H type repair line forming electricity independence；
D. in the region of this H type repair line and this scanning line overlap, carry out laser in the overlapping region of breakpoint both sides respectively
Welding.After laser welding, the voltage signal near scanning-line signal input side for the scan line breakpoint after H type repair line,
It is transferred to the opposite side of scan line breakpoint, the voltage signal realizing scan line breakpoint both sides is consistent.
A kind of restorative procedure of dot structure is provided, it comprises the following steps in one embodiment of the invention:
D. when data wire disconnects, the H type repair line of data wire breakpoint the upper side and lower side from " rich " font repair line
Cut out, and keep being electrically connected between upper and lower two H type repair lines；
E. pass through data wire and upside on the upside of laser welding data wire breakpoint repair liner, the reparation liner of upside with
The H type repair line of upside, and the data wire on the downside of laser welding data wire breakpoint and downside repair liner, the reparation of downside
Liner and the H type repair line of downside；
F., after laser welding, the voltage signal near data line signal input side for the data wire breakpoint is through upside H type
After repair line, upside repair liner, downside H type repair line and downside reparation liner, it is transferred to the opposite side of data wire breakpoint, real
The voltage signal of existing data wire breakpoint both sides is consistent.
A kind of restorative procedure of dot structure is provided, it comprises the following steps in one embodiment of the invention:
E. when the short circuit of scan line data line, around scan line and data wire short circuit, successively on cut-out short dot
The data wire of side and the data wire of downside；
F. and then find H type repair line in the upside of data wire cutting line, find H type in the downside of data wire cutting line and repair
Multiple line, cuts out upside H type repair line and downside H type repair line from " rich " font repair line respectively, and keeps upper and lower
Being electrically connected between two H type repair lines；
G. by the reparation liner of the data wire on the upside of laser welding data wire cutting line and upside, the reparation liner of upside
With the data wire on the downside of the H type repair line of upside, and laser welding data wire cutting line and downside repair liner, downside
Repair the H type repair line of liner and downside；
H., after laser welding, the data wire cutting line of the upside voltage signal near data line signal input side passes through
After upside H type repair line, upside repair liner, downside H type repair line and downside reparation liner, it is transferred to downside data wire cut-out
, away from the side of short dot, the voltage signal realizing short dot upper and lower both sides data wire is consistent for line.After cut-out data wire, scanning
Normal signal transfer functions realized by line.
Preferably, described public electrode 46 is arranged on the centrage of described pixel electrode 43, and respectively at described data
Line 42, pixel electrode 43 partly overlap respectively.
The present invention, using the dot structure optimizing, adds repair line in double grid dot structure, repairs the structures such as liner,
After the operation such as cut and laser welding, realize the line defect repair function of distribution in dot structure.
Brief description
Fig. 1 is that a kind of existing bigrid drives pixel arrangement schematic diagram；
Fig. 2 is the floor map that a kind of existing bigrid drives dot structure；
Fig. 3 a contains the floor map of the double grid dot structure of H type repair line for one embodiment of the invention；
Fig. 3 b is the generalized section along hatching a-a ' direction for Fig. 3 a of the present invention；
Fig. 4 contains the floor map of the double grid dot structure of " rich " font repair line for further embodiment of this invention；
The scan line broken string that Fig. 5 contains the double grid dot structure of H type repair line for another embodiment of the present invention repairs schematic diagram；
The scan line broken string reparation that Fig. 6 contains the double grid dot structure of " rich " font repair line for yet another embodiment of the invention is shown
It is intended to；
The broken data wire reparation that Fig. 7 contains the double grid dot structure of " rich " font repair line for further embodiment of this invention is shown
It is intended to；
The scan line that Fig. 8 contains the double grid dot structure of " rich " font repair line for yet another embodiment of the invention is short with data wire
Schematic diagram is repaired on road；
Specific embodiment
The present invention is further illustrated with embodiment below in conjunction with the accompanying drawings.
As bigrid dot structure as shown in Figure 2, due between adjacent two pixels not having a shared data line no
There is the space of certain distance between adjacent scanning lines between data wire, and upper and lower two row pixels, can join in these regions
Put backup wirings, the circuit defect reparation for scan line data line or the open defect reparation repaired.
Thought is repaired according to the line defect of the present invention, the invention provides a kind of dot structure containing H type repair line and
A kind of dot structure containing " rich " font repair line.
Fig. 3 a contains the floor map of the double grid dot structure of H type repair line for one embodiment of the invention, and Fig. 3 b is this
Bright Fig. 3 a is along the generalized section in hatching a-a ' direction.With reference to Fig. 3 a and Fig. 3 b, the present invention provides a kind of dot structure, its bag
Include: a substrate；One the first metal layer, is configured on this substrate, wherein this first metal layer includes: four scan lines 31；Four grids
341, it is electrically connected with those scan lines 31；Two public electrodes 36；One gate insulator, is configured on this substrate and covers this
The first metal layer；Semiconductor channel layer 344, is configured on this gate insulator；One second metal layer, is configured at this quasiconductor
On channel layer 344, wherein this second metal layer includes: two data wires 32, interlocks with those scan lines 31；Four drain electrodes 342, each
It is electrically connected with this data wire 32；Four source electrodes 343；Repair line 37, is set to H type and forms H type repair line 37, horizontal arrangement is in two
Between adjacent scanning lines, and described H type repair line about 37 extended line respectively at partly overlapping with described scan line；One protection
Layer, is configured on this substrate and covers this second metal layer；Four contact holes 35, are respectively arranged at the top of described drain electrode 342, institute
State in the described protective layer that contact hole 35 is drain electrode 342 top and dig out the hole come；And four pixel electrodes 33, it is configured at this
On protective layer, and by those contact holes 35 and those drain electrode 342 electric connections；Wherein, described two adjacent scanning lines are located at institute
State the same side of pixel electrode.
Shown in Fig. 3 a and Fig. 3 b, the double grid dot structure manufacturing process containing H type repair line is as follows:
A, on transparent underlay substrate, carries out the film-forming process of the first metal layer, then by the coating of photoresist, exposure
The techniques such as light, the development of photoresist, etching, the stripping of photoresist, form scan line 31, public electrode 36 and thin film transistor (TFT)
Grid 341.Then, coat the insulating material layer of layer of transparent above these patterns.This layer of insulating material layer is commonly referred to as
Gate insulator 39.
B, above gate insulator, carries out the film-forming process of semiconductor layer, then by the coating of photoresist, exposure
The techniques such as light, the development of photoresist, etching, the stripping of photoresist, form semiconductor channel layer 344.
C, above semiconductor channel layer 344, carries out the film-forming process of second metal layer, then by the painting of photoresist
The techniques such as cloth, exposure, the development of photoresist, etching, the stripping of photoresist, form data wire 32, the drain electrode of thin film transistor (TFT)
342nd, the source electrode 343 of thin film transistor (TFT), H type repair line 37.Then, coat the insulant of layer of transparent above these patterns
Matter layer.This layer of insulating material layer is commonly referred to as passivation protection layer 38.
D, above passivation protection layer, carries out the hole etching technology of contact hole, by the coating of photoresist, exposure, photoetching
The techniques such as the development of glue, etching, the stripping of photoresist, form contact hole 35.
E, above contact hole 35, carries out the film-forming process of transparency conducting layer, then by the coating of photoresist, exposure
The techniques such as light, the development of photoresist, etching, the stripping of photoresist, form pixel electrode 33.Transparency conducting layer is generally ito material
Material.Pixel electrode 33 passes through contact hole 35, realizes being electrically connected with drain electrode 342.
Fig. 3 a is that the restorative procedure of the shown double grid dot structure containing H type repair line is as follows, and when scan line disconnects, it is special
Levy and be that described restorative procedure step is as follows: in the scan line that open circuit occurs, find the H type repair line of breakpoint both sides and be somebody's turn to do
The region of scanning line overlap, carries out laser welding in the overlapping region of breakpoint both sides respectively.After laser welding, scan line breakpoint leans on
The voltage signal of nearly scanning-line signal input side, after H type repair line, is transferred to the opposite side of scan line breakpoint, realizes
The voltage signal of scan line breakpoint both sides is consistent.
As an embodiment it is preferable that described public electrode (36) is arranged on the centrage of described pixel electrode (33),
And partly overlap respectively respectively at described data wire (32), pixel electrode (33).
Fig. 4 contains the floor map of the double grid dot structure of " rich " font repair line for one embodiment of the invention, as Fig. 4 institute
Show, the invention provides a kind of dot structure, comprising: a substrate；One the first metal layer, is configured on this substrate, wherein should
The first metal layer includes: four scan lines 41；Four grids 441, are electrically connected with those scan lines 41；Two public electrodes 46；Repair
Multiple liner 48, is configured between two adjacent described scan lines；One gate insulator, is configured on this substrate and covers this first gold medal
Belong to layer；Semiconductor channel layer 444, is configured on this gate insulator；One second metal layer, is configured on this semiconductor layer,
And below this second metal layer, all having this semiconductor channel layer 444, wherein this second metal layer includes: two data wires 42, with this
A little scan lines 41 are interlocked；Four source electrodes 443, are each electrically connected with this data wire 42；Four drain electrodes 442；Repair line 47, is set to
" rich " font forms " rich " font repair line 47, has three H type repair lines of transverse horizontal configuration, and it is adjacent that it is located at two respectively
Between scan line, and this upper and lower extended line of H type repair line, respectively at being partly overlapped with described scan line, is had and vertically be arranged in parallel
Vertical repair line between two this data wire adjacent；One protective layer, is configured on this substrate and covers this second metal layer；Four
Contact hole 45, is respectively arranged at the top of described drain electrode 442, and described contact hole 45 is in the described protective layer of drain electrode 442 top
Dig out the hole come；And four pixel electrodes 33, it is configured on this protective layer, and by those contact holes 35 and those drain electrodes
342 electric connections；Wherein, this two adjacent scanning lines is located at the same side of described pixel electrode, and this reparation liner 48 and this number
Partly overlap respectively according to line, this repair line 47, should " rich " font repair line 47 vertical line be arranged between two this pixel electrode adjacent.
The manufacturing process of the double grid dot structure containing " rich " font repair line as shown in Figure 4 is as follows:
F, on transparent underlay substrate, carries out the film-forming process of the first metal layer, then by the coating of photoresist, exposure
The techniques such as light, the development of photoresist, etching, the stripping of photoresist, form scan line 41, public electrode 46, thin film transistor (TFT)
Grid 441, reparation liner 48.Then, coat the insulating material layer of layer of transparent above these patterns.This layer of megohmite insulant
Layer is commonly referred to as gate insulator.
G, above gate insulator, carries out the film-forming process of semiconductor layer, then by the coating of photoresist, exposure
The techniques such as light, the development of photoresist, etching, the stripping of photoresist, form semiconductor channel layer 444.
H, above semiconductor channel layer 444, carries out the film-forming process of second metal layer, then by the painting of photoresist
The techniques such as cloth, exposure, the development of photoresist, etching, the stripping of photoresist, form data wire 42, the drain electrode of thin film transistor (TFT)
442nd, the source electrode 443 of thin film transistor (TFT), " rich " font repair line 47.Then, coating layer of transparent above these patterns
Insulating material layer.This layer of insulating material layer is commonly referred to as passivation protection layer.
I, above passivation protection layer, carries out the hole etching technology of contact hole, by the coating of photoresist, exposure, photoetching
The techniques such as the development of glue, etching, the stripping of photoresist, form contact hole 45.
J, above contact hole 45, carries out the film-forming process of transparency conducting layer, then by the coating of photoresist, exposure
The techniques such as light, the development of photoresist, etching, the stripping of photoresist, form pixel electrode 43.Transparency conducting layer is generally ito material
Material.Pixel electrode 43 passes through contact hole 45, realizes being electrically connected with drain electrode 442.
As the restorative procedure of the dot structure containing " rich " font repair line, when scan line disconnects it is characterised in that described
Restorative procedure step as follows: occur open circuit scan line on, find the H type reparation near breakpoint for " rich " the font repair line
Line, and this H type repair line is cut out from " rich " font repair line the H type repair line forming electricity independence.Repair in this H type
Multiple line and the region of this scanning line overlap, carry out laser welding in the overlapping region of breakpoint both sides respectively.After laser welding, scanning
The voltage signal near scanning-line signal input side for the line breakpoint, after H type repair line, is transferred to the another of scan line breakpoint
Side, the voltage signal realizing scan line breakpoint both sides is consistent.
As the restorative procedure of the dot structure containing " rich " font repair line, when data wire disconnects it is characterised in that described
Restorative procedure step as follows: the H type repair line of data wire breakpoint the upper side and lower side is cut out from " rich " font repair line
Come, and keep being electrically connected between upper and lower two H type repair lines.By the data wire on the upside of laser welding data wire breakpoint with
The H type repair line repairing liner and upside repairing liner, upside of upside, and the number on the downside of laser welding data wire breakpoint
The H type repair line repairing liner and downside repairing liner, downside according to line and downside.After laser welding, data wire breakpoint leans on
The voltage signal of nearly data line signal input side repairs liner, downside H type repair line through upside H type repair line, upside
Repair after liner with downside, be transferred to the opposite side of data wire breakpoint, the voltage signal realizing data wire breakpoint both sides is consistent.
As containing " rich " font repair line dot structure restorative procedure, when scan line data line is short open when, its feature
It is that described restorative procedure step is as follows: around scan line and data wire short circuit, the number on the upside of cut-out short dot successively
Data wire according to line and downside.Then H type repair line is found in the upside in data wire cutting line, in the downside of data wire cutting line
Find H type repair line, upside H type repair line and downside H type repair line are cut out respectively from " rich " font repair line, and
Keep being electrically connected between upper and lower two H type repair lines.By the data wire on the upside of laser welding data wire cutting line with upper
The H type repair line repairing liner and upside repairing liner, upside of side, and the number on the downside of laser welding data wire cutting line
The H type repair line repairing liner and downside repairing liner, downside according to line and downside.After laser welding, the data wire of upside
The voltage signal near data line signal input side for the cutting line repairs liner, downside h through upside H type repair line, upside
After type repair line and downside reparation liner, it is transferred to downside data wire cutting line away from the side of short dot, realizes on short dot
The voltage signal of lower both sides data wire is consistent.After cut-out data wire, scan line realizes normal signal transfer functions.
As an embodiment it is preferable that described public electrode 46 is arranged on the centrage of described pixel electrode 43, and point
Do not partly overlap respectively in described data wire 42, pixel electrode 43.
Embodiment 1
The scan line broken string that Fig. 5 contains the double grid dot structure of H type repair line for one embodiment of the invention repairs schematic diagram.As
Shown in Fig. 5, in the dot structure that double grid drives, between lastrow pixel and next line pixel, design a H type repair line
Structure, the left and right sides of H type repair wire structure respectively with the scan line of lastrow pixel and the scan line weight of next line pixel
Folded.
The dot structure that double grid as shown in Figure 5 drives, when breakpoint 53 in scan line 51, corresponding restorative procedure is such as
Under:
A, in the scan line 51 that open circuit occurs, find H type repair line 57 and scan line 51 weight of breakpoint 53 left and right sides
Folded region.
B, carry out laser welding in the overlapping region of breakpoint both sides respectively, form pad 521 and pad 522.
After laser welding, the voltage signal near scanning-line signal input side for the scan line breakpoint 53 is through H type reparation
After line 57, it is transferred to the opposite side of scan line breakpoint 53, the voltage signal realizing scan line breakpoint 53 both sides is consistent.
Embodiment 2
The scan line broken string that Fig. 6 contains the double grid dot structure of " rich " font repair line for one embodiment of the invention repairs signal
Figure.As shown in fig. 6, in the dot structure that double grid drives, between lastrow pixel and next line pixel, and left data
" rich " font repair wire structure, " rich " font reparation is designed between the left pixel of the right pixel of line and right side data wire
Line structure is a kind of connecting line between right pixel by left data line and the left pixel of right side data wire upper and lower h
The same layer metal structure that the realization of type repair wire structure is electrically connected.H type repair wire structure in " rich " font repair wire structure,
The bottom of both sides is all designed with the reparation liner with scan line with layer.Repair liner two ends respectively with data wire and H type reparation
There is the region that partly overlaps in line structure.
The dot structure that double grid as shown in Figure 6 drives, when breakpoint 63 in scan line 61, corresponding restorative procedure is such as
Under:
A, occur open circuit scan line 61 on, find the H type repair line 67 near breakpoint 63 for " rich " the font repair line, and
The connecting line of laser cut line 641 cut-out upside is passed through on " rich " font repair line, on the downside of laser cut line 642 cut-out
Connecting line, H type repair line 67 cut out from " rich " font repair line formed electricity independence H type repair line.
B, in H type repair line 67 region overlapping with scan line 61, swashed in the overlapping region of breakpoint 63 both sides respectively
Photocoagulation, forms pad 621 and pad 622.
After laser welding, the voltage signal near scanning-line signal input side for the scan line breakpoint 63 is through H type reparation
After line 67, it is transferred to the opposite side of scan line breakpoint 63, the voltage signal realizing scan line breakpoint 63 both sides is consistent.
Embodiment 3
The broken data wire reparation that Fig. 7 contains the double grid dot structure of " rich " font repair line for one embodiment of the invention is illustrated
Figure.As shown in fig. 7, in the dot structure that double grid drives, between lastrow pixel and next line pixel, and left data
" rich " font repair wire structure, " rich " font reparation is designed between the left pixel of the right pixel of line and right side data wire
Line structure is a kind of connecting line between right pixel by left data line and the left pixel of right side data wire upper and lower h
The same layer metal structure that the realization of type repair wire structure is electrically connected.H type repair wire structure in " rich " font repair wire structure,
The bottom of both sides is all designed with the reparation liner with scan line with layer.Repair liner two ends respectively with data wire and H type reparation
There is the region that partly overlaps in line structure.
The dot structure that double grid as shown in Figure 7 drives, when breakpoint 72 in data wire 71, corresponding restorative procedure is such as
Under:
A, the H type repair line 772 of data wire breakpoint 72 upside is passed through laser cut line 741 and line of cut 742 from " rich "
Cut out in font repair line.
B, the H type repair line 782 of data wire breakpoint 72 downside is passed through laser cut line 751 and line of cut 752 from " rich "
Cut out in font repair line.And keep being electrically connected between H type repair line 772 and H type repair line 782.
The overlapping region of the reparation liner 771 of c, the data wire in data wire breakpoint 72 upside and upside carries out Laser Welding
Connect, form pad 731；Carry out laser welding in the overlapping region repairing liner 771 and H type repair line 772, form pad
732.
The overlapping region of the reparation liner 781 of d, the data wire in data wire breakpoint 72 downside and downside carries out Laser Welding
Connect, form pad 761；Carry out laser welding in the overlapping region repairing liner 781 and H type repair line 782, form pad
762.
After laser welding, the voltage signal near data line signal input side for the data wire breakpoint 72 is repaired through upside
After liner 781 is repaired in liner 771, upside H type repair line 772, downside H type repair line 782 and downside, it is transferred to data wire breakpoint
72 opposite side, the voltage signal realizing data wire breakpoint both sides is consistent.
Embodiment 4
The scan line that Fig. 8 contains the double grid dot structure of " rich " font repair line for yet another embodiment of the invention is short with data wire
Schematic diagram is repaired on road.As shown in figure 8, in the dot structure that double grid drives, between lastrow pixel and next line pixel, with
And design " rich " font repair wire structure between the right pixel of left data line and the left pixel of right side data wire,
" rich " font repair wire structure is between a kind of right pixel by left data line and the left pixel of right side data wire
Connecting line realizes upper and lower H type repair wire structure the same layer metal structure being electrically connected.H in " rich " font repair wire structure
Type repair wire structure, the bottom of both sides is all designed with the reparation liner with layer with scan line.Repair liner two ends respectively with number
There is the region that partly overlaps according to line and H type repair wire structure.
The dot structure that double grid as shown in Figure 8 drives, when short dot 81 in data wire 80 and scan line 89, accordingly
Restorative procedure as follows:
A, around the short dot 81 that scan line 89 is short-circuited with data wire 80, the cutting that formed by cut
Line 821 and the line of cut 822 being formed by cut, data wire 80 with scan line 89 electrically separated.This
Sample, scan line just can be normally carried out the transmission of signal voltage.
B, the H type repair line 842 of line of cut 821 upside is passed through laser cut line 851 and line of cut 852 from " rich " font
Cut out in repair line.
C, the H type repair line 843 of line of cut 822 downside is passed through laser cut line 871 and line of cut 872 from " rich " font
Cut out in repair line.
D, the H type repair line 844 between H type repair line 842 and H type repair line 843, by laser cut line 861 He
Line of cut 862 cuts off H type repair line 844.Keep being electrically connected between H type repair line 842 and H type repair line 843.
The overlapping region of the reparation liner 841 of e, the data wire in line of cut 821 upside and upside carries out laser welding, shape
Become pad 831；Carry out laser welding in the overlapping region repairing liner 841 and H type repair line 842, form pad 832.
The overlapping region of the reparation liner 845 of f, the data wire in line of cut 822 downside and downside carries out laser welding, shape
Become pad 882；Carry out laser welding in the overlapping region repairing liner 845 and H type repair line 843, form pad 881.
After laser welding, the voltage signal near data line signal input side for the line of cut 821 repairs lining through upside
Liner 845 is repaired in pad 841, upside H type repair line 842, middle H type repair line 844, downside H type repair line 843 and downside
Afterwards, it is transferred to the downside of line of cut 822, the voltage signal realizing data wire breakpoint both sides is consistent.
Above example technological thought only to illustrate the invention is it is impossible to limit protection scope of the present invention with this, every
According to technological thought proposed by the present invention, any change done on the basis of technical scheme, each fall within the scope of the present invention
Within；The technology that the present invention is not directed to all can be realized by prior art.
Claims (10)
1. a kind of dot structure, comprising:
One substrate；
One the first metal layer, is configured on this substrate, wherein this first metal layer includes:
Four scan lines (31)；
Four grids (341), are electrically connected with those scan lines (31)；
Two public electrodes (36)；
One gate insulator, is configured on this substrate and covers this first metal layer；
Semiconductor channel layer (344), is configured on this gate insulator；
One second metal layer, is configured on this semiconductor channel layer (344), wherein this second metal layer includes:
Two data wires (32), are interlocked with those scan lines (31)；
Four source electrodes (343), are each electrically connected with this data wire (32)；
Four drain electrodes (342)；
Repair line (37), is set to H type and forms H type repair line (37), horizontal arrangement is between two adjacent scanning lines, and described h
Type repair line (37) up and down extended line respectively at partly overlapping with described scan line；
One protective layer, is configured on this substrate and covers this second metal layer；
Four contact holes (35), are respectively arranged at the top of described drain electrode (342), and described contact hole (35) is above drain electrode (342)
Described protective layer in dig out come a hole；
And four pixel electrodes (33), it is configured on this protective layer, and by those contact holes (35) and those drain electrode (342) electricity
Property connect；
Wherein, described two adjacent scanning lines are located at the same side of described pixel electrode；
Described public electrode (36) is arranged on the centrage of described pixel electrode (33), and respectively at described data wire (32),
Pixel electrode (33) partly overlaps respectively.
2. a kind of pixel structure preparation method, it comprises the following steps:
A. on substrate, carry out the film-forming process of the first metal layer, by the coating of photoresist, exposure, development, etching, peel off,
Form the grid (341) of scan line (31), public electrode (36) and thin film transistor (TFT), coat a gate insulator above it；
B. above this gate insulator, carry out the film-forming process of semiconductor layer, then by the coating of photoresist, exposure,
Development, etching, the stripping of photoresist, form semiconductor channel layer (344)；
C. in the top of semiconductor channel layer (344), carry out the film-forming process of second metal layer, then by the painting of photoresist
The techniques such as cloth, exposure, the development of photoresist, etching, the stripping of photoresist, form data wire (32), the drain electrode of thin film transistor (TFT)
(342), the source electrode (343) of thin film transistor (TFT), H type repair line (37), coats one layer of passivation protection layer, wherein, this H type above it
Repair line (37) horizontal arrangement between two adjacent scanning lines, and described H type repair line (37) up and down extended line respectively at institute
State scan line to partly overlap；
D. above this passivation protection layer, carry out the hole etching technology of contact hole, by the coating of photoresist, exposure, development, carve
Erosion, stripping, form contact hole (35)；
E. in the top of this contact hole (35), carry out the film-forming process of transparency conducting layer, then by the coating of photoresist, exposure
Light, development, etching, stripping, form pixel electrode (33), and this pixel electrode (33) passes through this contact hole (35), with this drain electrode 342
Realization is electrically connected；
Wherein, described two adjacent scanning lines are configured at the same side of described pixel electrode.
3. a kind of restorative procedure of dot structure as claimed in claim 1, it comprises the following steps:
A. this H type repair line and this scan line of breakpoint both sides when scan line disconnects, in the scan line that open circuit occurs, are found
Overlapping region, carries out laser welding in this overlapping region of breakpoint both sides respectively；
B., after this laser welding, the voltage signal near scanning-line signal input side for the scan line breakpoint is repaiied through this H type
After multiple line, it is transferred to the opposite side of scan line breakpoint, the voltage signal realizing this scan line breakpoint both sides is consistent.
4. dot structure as claimed in claim 2 or claim 3, manufacture method or restorative procedure, wherein, described public electrode (36) sets
It is placed on the centrage of described pixel electrode (33), and partly weigh respectively respectively at described data wire (32), pixel electrode (33)
Folded.
5. a kind of dot structure, comprising:
One substrate；
One the first metal layer, is configured on this substrate, wherein this first metal layer includes:
Four scan lines (41)；
Four grids (441), are electrically connected with those scan lines (41)；
Two public electrodes (46)；
Repair liner (48), be configured between two adjacent described scan lines；
One gate insulator, is configured on this substrate and covers this first metal layer；
Semiconductor channel layer (444), is configured on this gate insulator；
One second metal layer, is configured on this semiconductor layer, and is provided with this semiconductor channel layer below this second metal layer
(444), wherein this second metal layer includes:
Two data wires (42), are interlocked with those scan lines (41)；
Four source electrodes (443), are each electrically connected with this data wire (42)；
Four drain electrodes (442)；
Repair line (47), is set to " rich " font and forms " rich " font repair line (47), have three H types of transverse horizontal configuration
Repair line, its respectively be located at two adjacent scanning lines between, and this upper and lower extended line of H type repair line respectively at described scan line portion
Divide overlap, there is the vertical repair line being vertically set in parallel between two this data wire adjacent；
One protective layer, is configured on this substrate and covers this second metal layer；
Four contact holes (45), are respectively arranged at the top of described drain electrode (442), and described contact hole (45) is above drain electrode (442)
Described protective layer in dig out come a hole；
And four pixel electrodes (43), it is configured on this protective layer, and by those contact holes (45) and those drain electrode (442) electricity
Property connect；
Wherein, this two adjacent scanning lines is located at the same side of described pixel electrode, and this reparation liner (48) and this data wire, should
Repair line (47) partly overlaps respectively, should " rich " font repair line (47) vertical line be arranged between two this pixel electrode adjacent；
Described public electrode (46) is arranged on the centrage of described pixel electrode (43), and respectively at described data wire (42),
Pixel electrode (43) partly overlaps respectively.
6. a kind of manufacture method of dot structure, it comprises the following steps:
A. on substrate, carry out the film-forming process of the first metal layer, then by the coating of photoresist, exposure, development, etching,
Peel off, form scan line (41), public electrode (46), the grid (441) of thin film transistor (TFT), repair liner (48), above it
Coat a gate insulator；
B. above this gate insulator, carry out the film-forming process of semiconductor layer, then by the coating of photoresist, exposure,
Development, etching, stripping, form semiconductor channel layer (444)；
C. in the top of this semiconductor channel layer (444), carry out the film-forming process of second metal layer, then by the painting of photoresist
Cloth, exposure, development, etching, stripping, form data wire (42), the drain electrode (442) of thin film transistor (TFT), source electrode (443), " rich " word
Type repair line (47), coats a protective layer above it, wherein, is set to " rich " font and forms " rich " font repair line (47),
There are three H type repair lines of transverse horizontal configuration, it is located between two adjacent scanning lines respectively, and this H type repair line is upper and lower
Extended line, respectively at being partly overlapped with described scan line, is had and is vertically set in parallel in vertically repairing between two this data wire adjacent
Multiple line；
D. above this protective layer, carry out the hole etching technology of contact hole, by the coating of photoresist, exposure, development, etching,
Peel off, form contact hole (45)；
E. in the top of this contact hole (45), carry out the film-forming process of transparency conducting layer, by the coating of photoresist, exposure, show
Shadow, etching, stripping, form pixel electrode (43), and this pixel electrode (43) passes through this contact hole (45), real with this drain electrode (442)
Now it is electrically connected；
Wherein, this two adjacent scanning lines is located at the same side of described pixel electrode, and this reparation liner (48) and this data wire, should
Repair line (47) partly overlaps respectively, should " rich " font repair line (47) vertical line be arranged between two this pixel electrode adjacent.
7. restorative procedure as claimed in claim 4, it comprises the following steps:
A., when scan line disconnects, in the scan line that open circuit occurs, find the H type reparation near breakpoint for " rich " the font repair line
Line, and this H type repair line is cut out from " rich " font repair line the H type repair line forming electricity independence；
B. in the region of this H type repair line and this scanning line overlap, carry out laser welding in the overlapping region of breakpoint both sides respectively,
After laser welding, the voltage signal near scanning-line signal input side for the scan line breakpoint, after H type repair line, is transferred to
The opposite side of scan line breakpoint, the voltage signal realizing scan line breakpoint both sides is consistent.
8. restorative procedure as claimed in claim 4, it comprises the following steps:
A., when data wire disconnects, the H type repair line of data wire breakpoint the upper side and lower side is cut from " rich " font repair line
Out, and keep being electrically connected between upper and lower two H type repair lines；
B. by the reparation liner of the data wire on the upside of laser welding data wire breakpoint and upside, the reparation liner of upside and upside
H type repair line, and the data wire on the downside of laser welding data wire breakpoint and downside repair liner, the reparation liner of downside
H type repair line with downside；
C., after laser welding, the voltage signal near data line signal input side for the data wire breakpoint is repaired through upside H type
After line, upside repair liner, downside H type repair line and downside reparation liner, it is transferred to the opposite side of data wire breakpoint, realizes number
Voltage signal according to line breakpoint both sides is consistent.
9. restorative procedure as claimed in claim 4, it comprises the following steps:
A. when the short circuit of scan line data line, around scan line and data wire short circuit, successively on the upside of cut-out short dot
Data wire and the data wire of downside；
B. and then find H type repair line in the upside of data wire cutting line, find H type reparation in the downside of data wire cutting line
Line, cuts out upside H type repair line and downside H type repair line from " rich " font repair line respectively, and keeps upper and lower two
Being electrically connected between individual H type repair line；
C. pass through the reparation liner of data wire and upside on the upside of laser welding data wire cutting line, the reparation liner of upside with upper
Data wire on the downside of the H type repair line of side, and laser welding data wire cutting line repairs liner, the reparation of downside with downside
Liner and the H type repair line of downside；
D., after laser welding, the data wire cutting line of the upside voltage signal near data line signal input side passes through upside
After H type repair line, upside repair liner, downside H type repair line and downside reparation liner, it is transferred to downside data wire cutting line remote
From the side of short dot, the voltage signal realizing short dot upper and lower both sides data wire is consistent, and after cut-out data wire, scan line is real
Now normal signal transfer functions.
10. the dot structure as described in any one of claim 6-9, manufacture method or restorative procedure, wherein, described public electrode
(46) it is arranged on the centrage of described pixel electrode (43), and respectively at described data wire (42), pixel electrode (43) respectively
Partly overlap.
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| CN106200192A (en) * | 2015-04-29 | 2016-12-07 | 元太科技工业股份有限公司 | Display device of electronic paper |
| TWI643177B (en) | 2015-04-29 | 2018-12-01 | 元太科技工業股份有限公司 | Electronic paper display device and manufacturing method thereof |
| CN104865766B (en) * | 2015-06-17 | 2018-06-19 | 南京中电熊猫液晶显示科技有限公司 | The dot structure of multi-domain perpendicular alignment-type liquid crystal |
| CN105446038B (en) * | 2016-01-04 | 2018-11-23 | 京东方科技集团股份有限公司 | A kind of array substrate and its method for maintaining, display panel and display device |
| CN108962113B (en) | 2017-05-19 | 2022-01-18 | 群创光电股份有限公司 | Display panel and driving method of display panel |
| CN106991956A (en) | 2017-06-05 | 2017-07-28 | 京东方科技集团股份有限公司 | A kind of image element circuit and its driving method and its preparation method, display device |
| CN111403311B (en) * | 2020-04-07 | 2022-12-06 | 深圳市华星光电半导体显示技术有限公司 | GOA circuit, display panel and repairing method |
| CN111952347B (en) * | 2020-08-24 | 2023-07-18 | 京东方科技集团股份有限公司 | Display substrate, repairing method thereof and display panel |
| CN114415433B (en) * | 2022-03-14 | 2022-07-12 | 惠科股份有限公司 | Array substrate, display panel and display device |
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