CN100405605C - Active Device Matrix Substrate - Google Patents

Abstract

The active device matrix substrate includes a substrate, a plurality of scan lines, a plurality of data lines, and a plurality of sub-pixel units. The scanning wires and the data wires are arranged on the substrate to define a plurality of pixel areas which are arranged in a triangular mode. The sub-pixel units are respectively arranged on the substrate corresponding to the pixel areas and are electrically connected with the corresponding scanning wirings and the data wirings, wherein two data wirings are arranged between the pixel areas corresponding to any two adjacent sub-pixel units which are electrically connected with the same scanning wiring and positioned at the same side of the same scanning wiring, and each sub-pixel unit comprises an active device and a pixel electrode. The active device is electrically connected with the corresponding scanning wiring and the corresponding data wiring. The pixel electrodes are electrically connected with the active device and extend outwards to the positions above the data wirings from the pixel areas corresponding to the sub-pixel units, wherein the distance between the pixel electrodes of any two adjacent sub-pixel units which are electrically connected with the same scanning wiring and positioned on the same side of the same scanning wiring is smaller than the shortest distance between the adjacent data wirings.

Description

Active Device Matrix Substrate

technical field

The invention relates to an active device matrix substrate, and in particular to an active device matrix substrate capable of improving the display quality of a liquid crystal display panel.

Background technique

In order to match the modern life pattern, the volume of video or image devices tends to be thinner and thinner day by day. Although the traditional cathode ray tube (cathode ray tube; CRT) display still has its advantages, due to the structure of its internal electronic cavity, the volume of the cathode ray tube display is huge and takes up space. At the same time, radiation will be generated, causing eye damage and other problems. Therefore, a flat panel display (FPD), such as a liquid crystal display, developed in conjunction with optoelectronic technology and semiconductor manufacturing technology, has gradually become the mainstream of display products.

FIG. 1A shows a top view of a conventional thin film transistor matrix substrate, and FIG. 1B shows a schematic cross-sectional view of the thin film transistor matrix substrate in FIG. 1A along the section line a-b. Please refer to FIG. 1A and FIG. 1B at the same time, the conventional thin film transistor matrix substrate 100 includes a glass substrate 110 , a plurality of scanning lines 120 , a plurality of data lines 130 and a plurality of sub-pixel units 140 . Wherein, the scan wiring 120 , the data wiring 130 and the sub-pixel unit 140 are all disposed on the substrate 110 . The sub-pixel unit 140 is electrically connected to the corresponding scanning wiring 120 and data wiring 130, and each sub-pixel unit 140 includes a thin film transistor 142 and a transparent conductive electrode (such as indium tin oxide (indium tin oxide; ITO) )144. The thin film transistor 142 is electrically connected to the corresponding scanning wiring 120 and the data wiring 130 , and the transparent conductive electrode 144 is electrically connected to the thin film transistor 142 .

It should be noted that when the thin film transistor matrix substrate 100 is combined with a color filter substrate (not shown), and injected with liquid crystal (not shown) to form a liquid crystal display panel (not shown), the thin film transistor matrix In the same column of the substrate 100 , any three adjacent sub-pixel units 140 sequentially correspond to color filter films of different colors on the color filter substrate. For example, the three adjacent sub-pixel units 140 respectively correspond to the color filter films of red R, green G, and blue B in sequence. When the liquid crystal display panel displays images, the light passing through the three sub-pixel units 140 will first pass through the liquid crystal, and then be filtered by color filter films of different colors to form red light, green light, and blue light. The light of these three colors will determine the color seen by the user after mixing.

In a traditional liquid crystal display panel, the colors in the color filter film (not shown) corresponding to the sub-pixel unit 140 are usually arranged in a straight strip, as shown in FIG. 1A , the spatial resolution of this arrangement in the horizontal direction is (spatial resolution) is lower. Since the color filter films corresponding to the sub-pixel units 140 in the same row (vertical direction) have the same color, and in the same column (horizontal direction) sub-pixel units 140, they correspond to the same color (such as red, green or blue) The sub-pixel units 140 are repeatedly arranged with a period of three sub-pixel units 140 as a period, so it is easy to cause line moires (Moirestripes). In addition, when displaying an all-white picture, the blue vertical pixel units 140 are connected in series, making the color look particularly black, which is related to the fact that the light receptors in human eyes are less sensitive to blue.

FIG. 2A is a top view of a conventional thin film transistor matrix substrate, and FIG. 2B is a schematic cross-sectional view of the thin film transistor matrix substrate in FIG. 2A along the section line a-b. Please refer to FIG. 2A and FIG. 2B at the same time. If the sub-pixel units 240 of the color filter films corresponding to red R, green G, and blue B are arranged in a delta manner, as shown in FIG. 2A, the above-mentioned problem can be solved. And get a better image display, but the corresponding arrangement of thin film transistors 242 also needs to be changed together, so that the original single data wiring 130 controls a single color driving method (as shown in FIG. 1A ) changed to the same data wiring 230 controlling two More complicated driving methods such as color (as shown in FIG. 2A ).

In addition, a parasitic capacitance C _pd (parasitic capacitance between pixel and data line) is generated between the transparent conductive electrode 244 and the data wiring 230 . When the distance between the transparent conductive electrode 244 and the data wiring 230 is too close, the C _pd will become larger, and the display of the pixel will be disturbed when the data wiring 230 transforms different signals, resulting in a cross-talk effect. Affects display quality. If an insulating layer (insulator layer) (not shown) with a low dielectric constant (dielectric constant) is added between the data wiring 230 and the transparent conductive electrode 244, the C _pd effect can be reduced. This insulating layer includes inorganic materials, organic materials Or a color filter film, etc., can allow the transparent conductive electrode 244 to straddle the data wiring 230 to increase the aperture ratio. FIG. 2C is a schematic diagram of the capacitive effect of a single sub-pixel unit in FIG. 2A . Please refer to FIG. 2C, as shown in FIG. 2C, assuming that the transparent conductive electrode 244 of a sub-pixel unit 240 and the data wiring 230 on the left (n-1th) generate a parasitic capacitance C _pd ', and the right side (nth) ) The data wiring 230 generates a parasitic capacitance C _pd , and the charge stored in the entire transparent conductive electrode 244 is affected by the total parasitic capacitance of the data wiring 230 , that is, the parasitic capacitance C _pd ′ plus the parasitic capacitance C _pd . If it is driven with dot inversion and column inversion, that is, on the same scan line 220, the voltage sent by the adjacent data line 230 at the same time is the same as the voltage of the common electrode (commonline). Positive and negative are opposite. The sum of the parasitic capacitance C _pd ' and the parasitic capacitance C _pd can be made smaller by canceling the positive and negative.

In the high aperture ratio (high aperture ratio) process in which the transparent conductive electrode 244 overlays the data wiring 230, the main factor affecting the difference between the left and right parasitic capacitance C _pd ' and the parasitic capacitance C _pd is that the transparent conductive electrode 244 overlays The size of the data wiring 230 area. Although the area of the transparent conductive electrodes 244 on the left and right sides straddling the data wiring 230 can be equalized during mask design. However, in the actual process, due to the influence of the accuracy of machine exposure alignment, there will be so-called overlay shift between layers, which is more likely to occur in large-size panels. When the overlay shift between the transparent conductive electrode 244 and the data wiring 230 produced by the process is too large, the value of the parasitic capacitance C _pd and the parasitic capacitance C _pd ' will differ too much, resulting in a total parasitic capacitance The increase will affect the display quality of the pixels.

Contents of the invention

In view of this, the purpose of the present invention is to provide a driving mode of a matrix of active devices that simplifies the triangular arrangement, so that it can drive the same color with the same data wiring; at the same time, it can prevent the pixel electrode from being separated from the data wiring due to process factors. When the overlay shift is large, the resulting parasitic capacitance difference between the left and right sides is too large, resulting in problems such as crosstalk effects.

Based on the above and other objectives, the present invention provides an active device matrix substrate, which includes a substrate, a plurality of scanning lines, a plurality of data lines, and a plurality of sub-pixel units. Both the scanning wiring and the data wiring are arranged on the substrate, wherein the scanning wiring and the data wiring define a plurality of pixel areas arranged in a triangle on the substrate. The data wiring is coordinated with the peripheral turning of the pixel area, and the turning points of the odd data wiring and the even data wiring are symmetrical or mirrored (symmetry or mirror), and a single data wiring is responsible for driving a single color. The sub-pixel units are respectively arranged on the substrate corresponding to these pixel regions, and are electrically connected to the corresponding scanning wiring and data wiring. Any two adjacent sub-pixel units on the same side of the same horizontal scanning wiring correspond to There are two data wirings arranged between the pixel areas, and the voltage sent by the two data wirings at the same time is opposite to the voltage difference of the common electrode (common line), that is, dot inversion Or row inversion (columninversion). And each sub-pixel unit includes an active device and a pixel electrode. The active device is electrically connected to the corresponding scanning wiring and data wiring. The pixel electrode is electrically connected to the active device, and extends outward from the pixel area corresponding to the sub-pixel unit to above these data wirings, wherein any two phases that are electrically connected to the same scanning wiring and located on the same side of the scanning wiring The distance between the pixel electrodes of adjacent sub-pixel units is smaller than the shortest distance between adjacent data wirings.

According to the active device matrix substrate of the preferred embodiment of the present invention, the pixel electrodes are, for example, honeycomb electrodes.

According to the active device matrix substrate of the preferred embodiment of the present invention, the pixel electrodes are, for example, rectangular electrodes.

According to the active device matrix substrate described in the preferred embodiment of the present invention, each pixel electrode has two electrode portions respectively located on two sides of a reference line and connected to each other, and these electrode portions are symmetrical to the reference line.

According to the active device matrix substrate of the preferred embodiment of the present invention, the electrode portions are, for example, trapezoidal.

According to the active device matrix substrate of the preferred embodiment of the present invention, the electrode portions are, for example, parallelograms.

According to the active device matrix substrate described in the preferred embodiment of the present invention, for example, it further includes a layer of low dielectric constant material, the dielectric constant of which is less than 7, and is disposed on the substrate, wherein the low dielectric constant material The layer is arranged between the pixel electrode and the data wiring.

To sum up, in the active device matrix substrate of the present invention, any three sub-pixel units that are electrically connected to the same scanning wiring and are arranged in a triangle form adjacent to each other can use the active device matrix of the present invention The liquid crystal display panel made of the substrate obtains better display quality. In addition, considering the process offset caused by the precise alignment of the lithography machine, the value of the process offset can be included in the mask design, so that any two adjacent lines located on the same side of the scanning wiring after the process offset The distance between the pixel electrodes of the sub-pixel unit can still be smaller than the shortest distance between adjacent data wirings, so that the overlapping area between the pixel electrodes and the data wirings can be fixed. With dot inversion and column inversion driving, the total parasitic capacitance can be minimized.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are described below in detail with accompanying drawings.

Description of drawings

FIG. 1A shows a top view of a conventional thin film transistor matrix substrate.

FIG. 1B is a schematic cross-sectional view of the thin film transistor matrix substrate in FIG. 1A along the section line a-b.

FIG. 2A illustrates a top view of another conventional TFT matrix substrate.

FIG. 2B is a schematic cross-sectional view of the thin film transistor matrix substrate in FIG. 2A along the section line a-b.

FIG. 2C is a schematic diagram of the capacitive effect of a single sub-pixel unit in FIG. 2A .

FIG. 3A is a top view of the active device matrix substrate according to the first embodiment of the present invention.

3B and 3C are schematic cross-sectional views of the active device matrix substrate in FIG. 3A along section line a-b and section line c-d, respectively.

FIG. 3D shows a top view of another active device matrix substrate.

FIG. 3E is a schematic diagram of a driving circuit diagram of the matrix of active devices arranged in a triangle in FIG. 3D .

FIG. 4A is a top view of an active device matrix substrate according to a second embodiment of the present invention.

4B and 4C are schematic cross-sectional views of the active device matrix substrate in FIG. 4A along the section line a-b and the section line c-d, respectively.

FIG. 5A is a top view of an active device matrix substrate according to a third embodiment of the present invention.

5B and 5C are schematic cross-sectional views of the active device matrix substrate in FIG. 5A along the section line a-b and the section line c-d, respectively.

FIG. 6A is a top view of an active device matrix substrate according to a fourth embodiment of the present invention.

6B and 6C are schematic cross-sectional views of the active device matrix substrate in FIG. 6A along the section line a-b and the section line c-d, respectively.

simple notation

100, 200: TFT matrix substrate

110, 210: glass substrate

120, 220, 320: scan wiring

130, 230, 330, 430, 530, 630: data wiring

140, 240, 340, 340’, 440, 540, 640: sub-pixel unit

142, 242: thin film transistor

144, 244: transparent conductive electrodes

300, 300’, 400, 500, 600: active device matrix substrates

310: Substrate

342: Active device

344, 344', 444, 544, 644: pixel electrodes

350, 450, 550, 650: pixel area

360: Low dielectric constant material layer

544a, 544b, 644a, 644b: electrode part

544c, 644c: Reference line

Detailed ways

first embodiment

3A shows a top view of the active device matrix substrate according to the first embodiment of the present invention, and FIG. 3B and FIG. 3C respectively show the schematic cross-sectional views of the active device matrix substrate in FIG. 3A along section line a-b and section line c-d. Please refer to FIG. 3A to FIG. 3C at the same time. The active device matrix substrate 300 of this embodiment includes a substrate 310 , a plurality of scan lines 320 , a plurality of data lines 330 and a plurality of sub-pixel units 340 . The relative positions, detailed structures and materials of the substrate 310 , the scan wires 320 , the data wires 330 and the sub-pixel units 340 will be further described below.

The substrate 310 is, for example, a glass substrate, a quartz substrate, or a substrate of other suitable materials. The scanning wires 320 can be aluminum alloy wires or wires formed of other suitable conductive materials, and the data wires 330 can be wires formed of chromium metal wires, aluminum alloy wires or other suitable conductive materials. More specifically, the scan wires 320 and the data wires 330 are disposed on the substrate 310 , and these scan wires 320 and the data wires 330 define a plurality of pixel regions 350 arranged in a triangle on the substrate 310 . The sub-pixel units 340 are disposed on the substrate 310 respectively corresponding to the pixel regions 350 , and are electrically connected to the corresponding scan lines 320 and data lines 330 . In the active device matrix substrate 300, two data wirings 330 are arranged between any two adjacent sub-pixel units 340 that are electrically connected to the same scanning wiring 320 and located on the same side of the scanning wiring 320, as Figure 3A.

As shown in FIG. 3A , each sub-pixel unit 340 includes an active device 342 and a pixel electrode 344 . Wherein, the active device 342 is electrically connected to the corresponding scan wire 320 and the data wire 330 , and the active device 342 is, for example, a thin film transistor or other tri-polar switching device with three terminals. The pixel electrode 344 is electrically connected to the active device 342. The pixel electrode 344 is, for example, a transmissive electrode, a reflective electrode, or a transflective electrode. The material of the pixel electrode 344 can be varied. Indium tin oxide, indium zinc oxide (IZO), metal or other transparent or opaque conductive materials. In addition, the pixel electrode 344 extends outward from the pixel region 350 corresponding to the sub-pixel unit 340 to the data wiring 330, wherein any two adjacent pixels that are electrically connected to the same scanning wiring 320 and located on the same side of the scanning wiring 320 The electrodes 344 are separated by a distance d ₁ , which is smaller than the shortest distance d ₂ between adjacent data wiring lines 330 . In other words, there is a data wire 330 closest to the pixel electrode 344 on the left and right sides of each pixel electrode 344 , and the pixel electrode 344 partially overlaps the two data wires 330 closest to the pixel electrode 344 . More specifically, the active device matrix substrate 300 is designed so that the left and right sides of the pixel electrode 344 overlap the data wiring 330 with the same area.

In this embodiment, the sub-pixel units 340 in the same odd column are driven by the odd data lines 330 , and the sub-pixel units 340 in the same even column are driven by the even data lines 330 . FIG. 3A shows the nth to n+5th data wires 330 of the active device matrix substrate 300, and also shows some sub-sections of the mth column to the m+2th column of the active device matrix substrate 300. In the pixel unit 340, n and m are both odd numbers, for example. Based on the above, the sub-pixel units 340 in the mth column and the m+2th column in FIG. 3A are respectively driven by the nth, n+2th, and n+4th data wiring lines 330; The sub-pixel units 340 in the m+1th column are respectively driven by the n+1th and n+3th data wires 330 . In another embodiment, the sub-pixel units 340 in the same odd column are driven by the even data lines 330 , and the sub-pixel units 340 in the same even column are driven by the odd data lines 330 . However, the layout of the sub-pixel unit 340 and the data wiring 330 is not limited to the above method. In addition, the advantages of the active device matrix substrate 300 of this embodiment will be described in detail below.

Since the sub-pixel units 340 are disposed on the substrate 310 corresponding to the pixel regions 350 arranged in a triangle, the sub-pixel units 340 of the active device matrix substrate 300 are also arranged in a triangle. After the active device matrix substrate 300 is paired with a color filter substrate (not shown), and liquid crystals (not shown) are injected to form a liquid crystal display panel (not shown), in the active device matrix substrate 300 , any three adjacent sub-pixel units 340 electrically connected to the same scanning wiring 320 are not only arranged in a triangle, but also correspond to color filter films of different colors on the color filter substrate, such as red R, green G, Blue B color filter film. When the liquid crystal display panel made with the active device matrix substrate 300 displays pictures, the light rays transmitted from the corresponding red R, green G, and blue B color filter films will mix colors more uniformly, so the active device matrix The liquid crystal display panel made of the substrate 300 has better display quality.

In this embodiment, the pixel electrode 344 is, for example, a honeycomb electrode, and to match the shape of the pixel electrode 344 , the data wiring 330 is bent along the edge of the pixel electrode 344 . Since the left and right sides of each pixel electrode 344 overlap a data line 330 closest to the pixel electrode 344, there will be parasitic capacitance C _pd between each sub-pixel unit 340 and the data lines 330 on the left and right sides. . Since the left and right sides of the pixel electrode 344 overlap the data wiring 330 with the same area, the parasitic capacitance between each sub-pixel unit 340 and the left and right data wiring 330 can be balanced.

In more detail, this embodiment utilizes the turning point of the symmetrical data wiring 330 to provide a new triangular arrangement matrix. Because of the new triangular arrangement matrix, two adjacent sub-pixel units 340 located on the same side of a scanning wiring 320 There are two data wires 330 that control different signals passing through, and the pixel electrodes 344 of two adjacent sub-pixel units 340 respectively straddle the data wires 330 close to their own side, considering the process offset caused by the precise alignment of the lithography machine The value of the process offset can be included in the mask design, so that the distance d ₁ between two adjacent pixel electrodes 344 is still smaller than the distance d ₂ between the two data wirings 330 after the process offset, refer to As shown in Fig. 3C, the overlapping area of the pixel electrode and the data electrode can be kept unchanged, so the parasitic capacitance C _pd on the left and right sides and the parasitic capacitance C _pd ' will be similar in size, and will not change due to the overlay shift between processes . When the active device matrix substrate 300 is used in conjunction with driving methods such as dot inversion and column inversion, that is, the data wiring 330 of an odd row is applied with a positive voltage (relative to the common electrode ), when the data wires 330 of the odd rows are applied with a negative polarity voltage, in this way, the effects of the parasitic capacitances on both sides of the sub-pixel unit 340 can be canceled out, thereby reducing cross talk.

It should be noted that although the present embodiment uses the pixel electrode 344 as a honeycomb electrode and the active device matrix substrate 300 as a liquid crystal display panel for illustration, the pixel electrode 344 of the active device matrix substrate 300 of the present invention does not It is limited to a honeycomb electrode, and the active device matrix substrate 300 is not limited to be used for making a liquid crystal display panel. In other words, the pixel electrodes 344 of the active device matrix substrate 300 of the present invention can be electrodes of other shapes according to different requirements, and the active device matrix substrate 300 of the present invention can also be used to make other display panels.

FIG. 3D shows a top view of another active device matrix substrate, which is a variation of the active device matrix substrate 300 shown in FIG. 3A . Referring to FIG. 3D, the active device matrix substrate 300' is similar to the aforementioned active device matrix substrate 300, except that the pixel electrodes 344' do not cover the data wiring 330 in the active device matrix substrate 300'. FIG. 3E is a schematic diagram of a driving circuit diagram of the matrix of active devices arranged in a triangle in FIG. 3D . Please refer to FIG. 3D, in the active device matrix substrate 300', the pixel electrode 344' utilizes the turning point of the symmetrical data wiring 330 to provide a new triangular array matrix, which can use a relatively simple single data line Wiring 330 controls the driving of a single color.

second embodiment

FIG. 4A shows a top view of an active device matrix substrate according to the second embodiment of the present invention, and FIG. 4B and FIG. 4C respectively show cross-sectional schematic views of the active device matrix substrate in FIG. 4A along section line a-b and section line c-d. Please refer to FIGS. 4A to 4C at the same time. The active device matrix substrate 400 is similar to the active device matrix substrate 300 of the first embodiment. The main difference is that the pixel electrodes 444 of this embodiment are rectangular electrodes, and the data wiring 430 Then, it is bent according to the shape of the pixel electrode 444 to define a rectangular pixel region 450 .

Based on the above, the advantages of the active device matrix substrate 400 of this embodiment are the same as those of the active device matrix substrate 300 of the first embodiment, so they will not be repeated here.

In addition, the pattern of the pixel electrodes 444 of the active device matrix substrate 400 can also be changed to not cover the data wiring 430 to form another new active device matrix substrate (not shown). In this active device matrix substrate, a single data wire 430 can be used to control the driving of a single color.

third embodiment

5A shows a top view of an active device matrix substrate according to a third embodiment of the present invention, and FIG. 5B and FIG. 5C show cross-sectional schematic views of the active device matrix substrate in FIG. 5A along section line a-b and section line c-d, respectively. Please refer to FIG. 5A to FIG. 5C at the same time, the active device matrix substrate 500 is similar to the active device matrix substrate 300 of the first embodiment, the main difference is that the pixel electrodes 544 of this embodiment can be defined to be located on a reference line The electrode portions 544a, 544b on both sides of the electrode 544c are connected to each other, and the two electrode portions 544a, 544b are symmetrical to the reference line 544c. The two electrode portions 544 a and 544 b are trapezoidal, and the data wiring 530 is bent according to the shape of the pixel electrode 544 to define a shield-shaped pixel area 550 .

Based on the above, the advantages of the active device matrix substrate 500 of this embodiment are the same as those of the active device matrix substrate 300 of the first embodiment, so they will not be repeated here. In addition, the pattern of the pixel electrodes 544 of the active device matrix substrate 500 can also be changed to not cover the data wires 530 to form another new active device matrix substrate (not shown). In this active device matrix substrate, a single data wire 530 can be used to control the driving of a single color.

It should be noted that the two electrode portions 544a, 544b of the pixel electrode 544 in this embodiment are not limited to trapezoidal shapes. The two electrode portions 544a, 544b of the pixel electrode 544 of the active device matrix substrate 500 of the present invention can be electrodes of other shapes according to different requirements.

Fourth embodiment

6A shows a top view of an active device matrix substrate according to a fourth embodiment of the present invention, and FIG. 6B and FIG. 6C show cross-sectional schematic views of the active device matrix substrate in FIG. 6A along section line a-b and section line c-d, respectively. Please refer to FIG. 6A to FIG. 6C at the same time, the active device matrix substrate 600 is similar to the active device matrix substrate 500 of the first embodiment, the main difference is that the pixel electrode 644 of this embodiment can define two electrode parts 644a, 644b, which is symmetrical to the reference line 644c, and is a parallelogram, and the data wiring 630 is bent along with the shape of the pixel electrode 644 to define a boomerang-shaped pixel area 650.

Based on the above, the advantages of the active device matrix substrate 600 of this embodiment are the same as those of the active device matrix substrate 300 of the first embodiment, so they will not be repeated here.

Like the previous embodiment, if the pixel electrode 644 of the active device matrix substrate 600 is changed to a pattern that does not cover the data wiring 630, an active device that uses a single data wiring 630 to control the driving of a single color can be formed. matrix substrate (not shown).

In summary, the active device matrix substrate of the present invention has at least the following advantages:

1. The design of the active device matrix substrate of the present invention can make the left and right sides of the pixel electrode cover the same area of the data wiring, and the coverage area will not be changed due to the offset of the data wiring layer and the transparent conductive layer in the process. Therefore, when producing the active device matrix substrate of the present invention, the process window between the pixel electrode and the data wiring is better.

2. In the active device matrix substrate of the present invention, the left and right sides of the pixel electrodes partially overlap the data wiring, so the aperture ratio (aperture ratio) of the liquid crystal display panel made by the active device matrix substrate of the present invention can be increased.

3. In the active device matrix substrate of the present invention, any three sub-pixel units that are electrically connected to the same scanning wiring and adjacent to them are arranged in a triangle, so that the liquid crystal display panel made of the active device matrix substrate of the present invention can Get better display quality.

Four, active device matrix substrate of the present invention can comprise a low dielectric constant material (low-k material) layer, and this dielectric insulating layer comprises inorganic material, organic material or color filter film etc., and its dielectric constant ( Dielectric constant) is less than 7, and it is arranged between the pixel electrode and the data wiring, which can reduce the capacitance value of the parasitic capacitance between the two, and reduce the influence of the stored charge on the transparent electrode from the signal transmitted by the data wiring.

5. In the active device matrix substrate of the present invention, when the transparent conductive electrode covers the data wiring, the parasitic capacitance value between each pixel electrode and the data wiring on the left and right sides can be controlled to be the same. After reversing the driving mode, the total parasitic capacitance can be minimized due to the subtraction of positive and negative polarities.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of protection of the invention should be defined by the claims.

Claims (11)

1. An active device matrix substrate, comprising: Substrate; A plurality of scanning wirings are arranged on the substrate; a plurality of data wirings arranged on the substrate, wherein the scanning wirings and the data wirings define a plurality of triangular pixel areas on the substrate; and A plurality of sub-pixel units are respectively arranged on the substrate corresponding to the pixel area, and are electrically connected to the corresponding scanning wiring and data wiring, and are electrically connected to the same scanning wiring and located at the same scanning wiring. Two data lines are arranged between the pixel regions corresponding to any two adjacent sub-pixel units on the side, and each sub-pixel unit includes: an active device electrically connected to corresponding scanning wiring and data wiring; and The pixel electrode is electrically connected with the active device, and extends from the pixel area corresponding to the sub-pixel unit to above the data wiring. 2. The active device matrix substrate as claimed in claim 1, wherein the pixel electrodes are honeycomb electrodes. 3. The active device matrix substrate as claimed in claim 1, wherein the pixel electrodes are rectangular electrodes. 4. The active device matrix substrate as claimed in claim 1, wherein each of the pixel electrodes has two electrode portions respectively located on two sides of a reference line and connected to each other, and the electrode portions are symmetrical to the reference line. 5. The active device matrix substrate of claim 4, wherein the electrode portion has a trapezoidal shape. 6. The active device matrix substrate of claim 4, wherein the electrode portion has a parallelogram shape. 7. The active device matrix substrate as claimed in claim 1, further comprising a low dielectric constant material layer, the dielectric constant of the low dielectric constant material layer is less than 7, disposed on the substrate, wherein the low dielectric constant The material layer is disposed between the pixel electrode and the data wiring. 8. The active device matrix substrate as claimed in claim 1, wherein the sub-pixel units in the same odd column are driven by odd data lines, and the sub-pixel units in the same even column are driven by even data lines. 9. The active device matrix substrate as claimed in claim 1, wherein the sub-pixel units in the same odd column are driven by even data lines, and the sub-pixel units in the same even column are driven by odd data lines. 10 . The active device matrix substrate as claimed in claim 1 , wherein the sub-pixel unit driven by one data line in the data wiring only displays one color. 11 . 11. The active device matrix substrate as claimed in claim 1, wherein the distance between the pixel electrodes of any two adjacent sub-pixel units that are electrically connected to the same scanning wiring and located on the same side of the scanning wiring is less than The shortest distance between adjacent data wiring.

Images