CN102015311A - 打印装置 - Google Patents
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- CN102015311A CN102015311A CN2008801289261A CN200880128926A CN102015311A CN 102015311 A CN102015311 A CN 102015311A CN 2008801289261 A CN2008801289261 A CN 2008801289261A CN 200880128926 A CN200880128926 A CN 200880128926A CN 102015311 A CN102015311 A CN 102015311A
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Abstract
一种打印装置(10),包括:基底(22),所述基底(22)包括从中延伸穿过的孔(20),其中,所述孔包括侧壁且限定液体墨流动路径;流体地连接到所述孔的墨喷发腔(24);以及位于所述孔的所述侧壁上的涂层,所述涂层不受液体墨的侵蚀的影响,其中,所述涂层选自二氧化硅、氧化铝、二氧化铪和氮化硅中的一种。
Description
背景技术
打印装置,如液体喷射打印机,可通过基底供应液体墨到喷发端口。在液体墨通过基底(例如通过延伸穿过基底的通道)供应时,液体墨将与通道壁接触。在基底由硅制成且液体墨是包括带电扩散物的着色墨的示例中,液体墨可侵蚀基底的通道壁,使得硅流失到着色墨中。墨中硅的存在可引起喷发端口的堵塞或部分堵塞。可期望减少喷发端口的这种堵塞或部分堵塞,以改进打印装置的打印质量。
附图说明
图1是打印装置的一个示例性实施例的示意性侧视截面图,包括涂层基底通道的一个示例性实施例。
图2是涂层基底通道的一个示例性实施例的示意性详细侧视截面图。
图3是其中包括增强结构的涂层基底通道的一个示例性实施例的示意性详细侧视截面图。
图4是包括多个增强结构的涂层基底通道的一个示例性实施例的示意性详细俯视图。
图5是用于涂覆基底通道的一个示例性实施例的沉积腔的一个示例性实施例的示意性截面侧视图。
具体实施方式
图1是打印装置10的一个示例性实施例的示意性侧视截面图,包括涂层基底通道12的一个示例性实施例。打印装置10可以是任何类型的打印装置,但是在所示实施例中,是热喷墨打印机,包括由基底22制成的打印头14,基底22具有喷嘴板16,用于在介质18(例如,一张纸)上打印图像。打印头14可包括穿过基底22形成的多个孔20(在图2和3中示出了一个孔20),其中,每个孔20都被连接到喷发腔24(图2和3),如参考图2和3所述。
图2是穿过基底22形成的涂层基底通道12的一个示例性实施例的示意性详细侧视截面图。具体地,基底22可包括穿过基底22形成的多个孔20(为了便于说明,示出了其中一个),其中,每个孔20都被连接到在基底22上形成的喷发腔24。墨供应腔(未示出)可以通过供应结构26流体地连接到孔20。例如,供应结构可以是被连接到供应腔的管,或者供应结构26可以是附连到打印头的流体歧管。例如,流体歧管26可以是喷射模制的塑料、由塑料制成或者由陶瓷制成。孔20可包括增强结构28,例如肋或横杆,增强结构28可延伸跨过孔20的范围30,从而增强基底22内的孔20。
增强结构28可称为肋,且能以各种形状和尺寸形成。在一个示例性实施例中,结构28可以从基底22的前侧68和后侧64凹进。结构28可具有在大约30-300微米范围内的宽度28a(图3)和大约100微米至基底22全厚度的深度28b(图2)。例如,结构28之间的开放长度28c(图3)可以在100微米至超过1000微米的范围内变化。增强结构28的目的在于增加芯片强度,从而可以在基底22中以高的产量制造长而窄的孔20。在一个示例性实施例中,例如,总的有效孔20或槽的长度20a(图3)可以在从半英寸(12700微米)至1.5英寸(38100微米)的范围内。本发明的涂覆工艺提供用于涂覆窄孔20和包括增强结构28的孔20,使得制成基底22和结构28的基底材料不会由于与墨42接触而被侵蚀。
在一个示例性实施例中,基底22由直径可以是150或200毫米(mm)且厚度是675或725微米(μm)的[100]硅片的初始基底形成。初始硅片可具有10^14至10^19atoms/cm3的杂质浓度,例如,硼、磷、砷或锑,用于期望装置性能。初始硅片也可以具有低水平的间隙氧。
仍参考图2,喷发腔24可以在基底22上在基底孔20的排出孔32处形成。例如,喷发腔24可以限定喷发通道34,喷发通道34终止于与热喷发电阻38相对地定位的喷发孔口36。例如,喷发腔24可以在基底22上制成,且可以由感光环氧树脂制成。喷发电阻38可以被连接到功率源(未示出)和控制器(未示出),使得喷发电阻38可以在需要时被激活以使得墨42的墨滴40从喷发孔口36喷出。
墨42可以容纳在墨供应源(未示出)中且可以流经供应结构26,通过基底22中的孔20,通过喷发腔24的喷发通道34,且流出喷发孔口36,以在一张打印介质18(图1)(例如,一张纸)上打印图像。在一个实施例中,墨42可以是其中包括带电扩散物44和色素颗粒54的着色墨,其中,带电扩散物44支承墨的色素。使用着色墨42而不是染色墨是因为与染色墨相比,着色墨可具有更大的颜色色移、高的抗褪色性、更好的耐水牢度、更短的干燥时间以及大的介质相容性。
着色墨42或高PH溶剂中的带电扩散物44可侵蚀硅材料,例如硅基底22的孔20的暴露壁46,可导致硅颗粒48流失到墨42中。在墨42中高于已知百万分之一(ppm)阈值(例如,高于十(10)ppm)的硅颗粒48的存在可导致在喷发孔口36处硅的析出,使得喷发孔口36会变得堵塞或部分堵塞,从而减少打印装置10的喷嘴板16的精确性和打印能力。
因而,本发明的打印装置10包括在基底22的孔20的暴露壁46上形成的保护涂层50,使得基底22的硅材料不与墨42接触。保护涂层50也可以完全涂覆基底22的后侧64。保护涂层50也可以完全涂覆增强结构28和喷发腔24的内壁表面52。保护涂层50也可以涂覆供应结构26(例如流体歧管)的内表面。保护涂层50可以由不透墨的材料制成,例如,二氧化硅(SiO2)、氮化硅(Si3N4)、氧化铝(Al2O3)、二氧化铪(HaO2)、由气相单体形成的共形聚合物(例如聚二甲苯)、有机聚合物、电镀金属(如镍、金或钯)、以及其它材料(例如,碳化硅)、或任何其它不透墨材料或材料组合。不透墨涂层50将防止或将显著减少墨42对硅基底22材料的侵蚀,使得硅颗粒48不会(或者非常低的数量)存在于墨42中,从而喷发孔口36不会由于喷发孔口36处的硅析出而变堵塞或部分堵塞。
图4是包括延伸跨过其的多个增强结构28的涂层基底通道20(例如,细长槽)的一个示例性实施例的示意性详细后侧图(相对于喷发孔口36)。通道20和每个增强结构28上包括保护涂层50。现在将参考图5描述保护涂层50的形成。
图5是用于例如在基底孔20的暴露壁46上涂覆二氧化硅涂层50的沉积腔60的一个示例性实施例的示意性截面侧视图。在该示例性实施例中,所使用的工艺是等离子体增强化学气相沉积(PECVD)。沉积在大约8torr的压力下、在大约170摄氏度的温度(感光环氧树脂的玻璃转变温度)下以及在大约1000Watts的功率下在Centura(R)DXZ腔中进行。通过一个或多个气体入口端口62供应的气体是在980标准立方厘米每分钟(sccm)下的氧气(O2)、在1000sccm下的氦气(He)和在1000sccm下的正硅酸乙酯(TEOS)。基底22可以定位成使得基底22的后侧64面向气体入口端口62,从而涂层50从基底22的供应结构26侧形成。在该示例性实施例中,具有大约20000埃厚度66(图2)的涂层50在大约九十(90)秒内从基底22的后侧64沉积,使得增强结构28和孔20的暴露壁46用涂层50涂覆。在另一个实施例中,基底22可定位成使得基底22的前侧68面向气体入口端口62,从而涂层50从基底22的喷发腔24侧形成。在这种示例性实施例中,具有大约20000埃厚度66(图2)的涂层50在大约九十(90)秒内从基底22的前侧68沉积,使得喷发腔24的内壁52、孔20的暴露壁46和然后增强结构28用涂层50涂覆。在另一个示例性实施例中,涂层50可从后侧64沉积工艺和前侧68沉积工艺两者涂覆于基底22。所形成的涂层50是二氧化硅的该示例性工艺的化学反应如下:Si(OC2H5)->SiO2+副产物。
紧接上文所述的该示例性过程允许保护涂层50在基底22上和在喷发腔34(可由感光环氧树脂制成)的内壁52上的低温沉积。在上述示例性实施例中,其中,从后侧64和前侧68两者进行涂覆,涂层50可完全封装喷发腔35,从而防止墨的化学侵蚀。腔60的沉积温度可保持在170摄氏度或更少,从而不会损害感光环氧树脂材料。
以下工艺可以用于形成保护涂层50:二氧化硅的等离子体增强化学气相沉积(PECVD)、氧化铝的原子层沉积(ALD)、二氧化铪的原子层沉积、二氧化硅的感应耦合等离子体增强化学气相沉积(ICPCVD)、氮化硅的感应耦合等离子体增强化学气相沉积(ICP CVD)、二氧化硅的微波等离子体辅助化学气相沉积(CVD)、由气相单体形成的共形聚合物(例如聚二甲苯)的化学气相沉积(CVD)、借助于等离子体辅助工艺的有机聚合物沉积、金属(如镍)的无电镀、金属(如镍、金或钯)电镀。以下高温涂覆工艺可以用在由在高温下不降级的材料制成的打印头结构上。例如,喷发腔可以由电镀金属、氧化硅或聚酰亚胺制成:碳化硅的等离子体增强化学气相沉积(PECVD);以及氮化硅的等离子体增强化学气相沉积(PECVD)。这些工艺中的每一种都可以用于在以许多不同配置形成的打印头的基底22的孔20中形成涂层50。例如,打印头可具有喷嘴板,喷嘴板由电铸成型的金属、感光聚合物、聚酰亚胺、或喷嘴通过激光消融形成的聚合物喷嘴板制成。基底22中的孔20或槽可以通过以下技术形成,例如湿蚀刻、反应离子蚀刻、研磨喷射加工、激光消融以及这些技术的组合。
在另一个示例性工艺中,牺牲性抗蚀剂可涂覆到未涂覆涂层50的区域,例如结合垫(bond pad)。在涂层50沉积之后,牺牲性抗蚀剂可通过剥离工艺去除以提供完成的装置10。
本发明的涂层50可以减少硅从基底22侵蚀到墨42中,从而墨42中硅的百万分之一(ppm)含量可减少至例如小于10ppm,且大约5ppm硅,这可减少或消除在喷发孔口36处形成硅环。没有涂层50的基底22和孔20已经确定具有高很多的硅ppm含量,例如大约23ppm硅。执行用来确定上述结果的试验,其中,基底在70摄氏度下沉浸在10ml的墨42中两天。基底的锯开边缘用硅环氧树脂涂覆以防止芯片边缘的蚀刻。然后,使用感应耦合等离子体频谱(ICP)分析来评价两种情况下(涂覆基底和未涂覆基底)的墨样本的硅浓度。可以注意的是,用于密封芯片边缘的硅环氧树脂通常产生3.5ppm的硅含量。因而,被测量产生具有5ppm的硅含量的墨42的涂覆基底22和孔20可仅仅贡献来自于涂覆基底的1.5ppm的硅。相比而言,被测量产生具有23ppm的硅含量的墨42的未涂覆基底22和孔20可贡献来自于涂覆基底22和孔20的高达19.5ppm的硅,远高于可被认为在喷发孔口36处形成硅环的10ppm阈值。
在另一个墨浸泡试验中,涂覆和未涂覆基底22和孔20组装成笔,用墨42填充,且在60摄氏度下存储七天。随后,通过喷嘴排出墨的少量样本且使用ICP分析评价硅浓度。具有涂覆基底22和孔20的笔被测量产生具有7.4ppm的硅浓度的墨42。相比而言,具有未涂覆基底22和孔20的笔被测量产生具有53ppm的硅浓度的墨42,远高于可被认为在喷发孔口36处形成硅环的10ppm阈值。
在两个试验样本中,墨42都通过包括涂覆和未涂覆基底22两者的喷发孔口36喷发,且发现通过包括涂层50将不会损害打印可靠性和方向性。
如本文所述,涂覆保护涂层50的工艺允许腐蚀性墨与易成型和易成图案的基底(例如硅)一起使用。因而,在容易获得的基底上使用涂层50可以减少使用已知技术可能不易成型或不易成图案的高度稳固的基底(例如,不锈钢基底)的使用。因而,使用保护涂层50增加了可以采用熟知的基底(例如,硅)的墨的类别,而不会遇到硅析出或侵蚀到墨42中。
在其它实施例中,可以采用其它基底,例如玻璃。
本文所述的构思的其它变型和修改可以被使用且落入权利要求的范围。
Claims (20)
1.一种打印装置(10),包括:
基底(22),所述基底(22)包括从中延伸穿过的孔(20),其中,所述孔包括侧壁(46)且限定液体墨流动路径;
流体地连接到所述孔的墨喷发腔(24);以及
位于所述孔的所述侧壁上的涂层(50),所述涂层不受液体墨(42)的侵蚀的影响,其中,所述涂层选自二氧化硅、氧化铝、二氧化铪、氮化硅、由气相单体形成的共形聚合物、有机聚合物、电镀金属、碳化硅、及其组合中的一种,所述电镀金属选自镍、金和钯中的一种。
2.根据权利要求1的装置(10),其中,所述基底(22)由硅制成。
3.根据权利要求1的装置(10),其中,所述涂层(50)不受其中包括带电扩散物(44)的着色墨的侵蚀的影响。
4.根据权利要求1的装置(10),其中,所述孔(20)限定在所述基底中形成的槽,所述槽包括延伸跨过所述孔的范围的机械增强结构(28)。
5.根据权利要求1的装置(10),其中,所述孔的整个表面用所述涂层涂覆。
6.根据权利要求1的装置(10),其中,所述涂层(50)减少基底材料溶解到墨中,从而容纳在所述孔中的墨在70摄氏度的温度和大气压力下在至少两天内包括溶解在其中的小于10ppm的基底材料。
7.根据权利要求1的装置(10),其中,所述墨喷发腔(24)限定热喷墨打印喷发腔,所述热喷墨打印喷发腔由感光环氧树脂制成且包括热电阻(38),其中,所述喷发腔的内表面(52)和外表面包括位于其上的所述涂层(50)。
8.根据权利要求1的装置(10),其中,所述涂层(50)至少还位于被连接到所述孔的墨供应结构(26)的内部上。
9.一种制造打印装置(10)的方法,包括:
形成孔(20),所述孔(20)延伸穿过基底(22),其中,所述孔限定暴露表面;
形成与所述孔流体地连接的喷墨喷嘴(36);以及
用不透墨的涂层材料(50)涂覆所述孔的所述暴露表面,其中,所述涂层选自二氧化硅、氧化铝、二氧化铪、氮化硅、由气相单体形成的共形聚合物、有机聚合物、电镀金属、碳化硅、及其组合中的一种,所述电镀金属选自镍、金和钯中的一种。
10.根据权利要求9所述的方法,其中,所述喷墨喷嘴的内部限定喷嘴暴露表面(52),所述方法还包括用不透墨的喷嘴涂层材料(50)涂覆所述喷嘴暴露表面,其中,所述喷嘴涂层材料选自二氧化硅、氧化铝、二氧化铪和氮化硅中的一种。
11.根据权利要求9所述的方法,其中,所述涂层(50)通过以下技术中的一种涂覆在所述暴露表面上:化学气相沉积(CVD)、等离子体增强化学气相沉积、原子层沉积(ALD)、感应耦合等离子体增强化学气相沉积和微波等离子体辅助化学气相沉积。
12.根据权利要求9所述的方法,其中,所述基底(22)由硅制成。
13.根据权利要求9所述的方法,其中,所述涂层(50)从所述基底的前侧(68)和所述基底的后侧(64)中的至少一个涂覆在所述暴露表面上。
14.根据权利要求9所述的方法,其中,所述涂层(50)使用正硅酸乙酯(TEOS)作为初始沉积材料制成。
15.根据权利要求9所述的方法,其中,所述涂层(50)限定在0.1至5.0微米范围内的厚度。
16.根据权利要求9所述的方法,其中,所述不透墨的涂层材料(50)对其中包括带电扩散物的着色墨是不可渗透的。
17.根据权利要求9所述的方法,其中,所述基底(22)由硅制成,所述涂层在低于170摄氏度的温度下涂覆在所述暴露表面上。
18.一种打印方法,包括:
使墨(42)流经延伸穿过含硅基底(22)的通道(20),所述通道的侧壁上包括涂层(50),所述涂层不受所述墨的侵蚀的影响,其中,所述涂层选自二氧化硅、氧化铝、二氧化铪、氮化硅、由气相单体形成的共形聚合物、有机聚合物、电镀金属、碳化硅、及其组合中的一种,所述电镀金属选自镍、金和钯中的一种;
使所述墨从所述通道流向喷发腔(24);以及
从所述喷发腔喷发墨。
19.根据权利要求18所述的方法,还包括在从所述喷发腔第一次喷发墨和从所述喷发腔第二次喷发墨之间将所述墨(42)保持在所述通道中,其中,在从所述喷发腔第一次和第二次喷发墨之间保持在所述通道中的所述墨不会侵蚀所述涂层(50)。
20.根据权利要求18所述的方法,其中,所述涂层(50)通过以下技术中的一种涂覆在所述侧壁上:化学气相沉积(CVD)、等离子体增强化学气相沉积、原子层沉积(ALD)、感应耦合等离子体增强化学气相沉积和微波等离子体辅助化学气相沉积。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000026006A (ko) * | 1998-10-16 | 2000-05-06 | 윤종용 | 압전 효과를 이용한 잉크젯 프린터 헤드 및 그 제조방법 |
EP1366906A1 (en) * | 2002-05-31 | 2003-12-03 | Hewlett-Packard Company | Chamber having a protective layer |
US20040035823A1 (en) * | 2002-08-26 | 2004-02-26 | Samsung Electronics Co., Ltd. | Monolithic ink-jet printhead and method of manufacturing the same |
US6758552B1 (en) * | 1995-12-06 | 2004-07-06 | Hewlett-Packard Development Company | Integrated thin-film drive head for thermal ink-jet printer |
US6846068B2 (en) * | 2002-08-09 | 2005-01-25 | Samsung Electronics Co., Ltd. | Monolithic ink-jet printhead and method for manufacturing the same |
US20060256162A1 (en) * | 2005-05-10 | 2006-11-16 | Canon Kabushiki Kaisha | Liquid jet head and method for producing the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4007352A (en) | 1975-07-31 | 1976-02-08 | Hewlett-Packard Company | Thin film thermal print head |
JP2683350B2 (ja) | 1987-12-01 | 1997-11-26 | キヤノン株式会社 | 液体噴射記録ヘッド及び該ヘッド用基板 |
EP0477378B1 (en) | 1990-03-27 | 1996-07-31 | Canon Kabushiki Kaisha | Liquid injection recording head |
AUPN623895A0 (en) * | 1995-10-30 | 1995-11-23 | Eastman Kodak Company | A manufacturing process for lift print heads with nozzle rim heaters |
JP2005132102A (ja) | 2003-10-09 | 2005-05-26 | Canon Inc | インクジェットヘッドおよび該ヘッドを備えるインクジェットプリント装置 |
JP4654640B2 (ja) | 2004-09-13 | 2011-03-23 | 富士ゼロックス株式会社 | インクジェット記録ヘッド、及び、インクジェット記録ヘッド製造方法 |
JP4847360B2 (ja) | 2006-02-02 | 2011-12-28 | キヤノン株式会社 | 液体吐出ヘッド基体、その基体を用いた液体吐出ヘッドおよびそれらの製造方法 |
-
2008
- 2008-04-29 EP EP08767501.3A patent/EP2271496B1/en not_active Not-in-force
- 2008-04-29 US US12/933,218 patent/US8333459B2/en active Active
- 2008-04-29 WO PCT/US2008/005663 patent/WO2009134225A1/en active Application Filing
- 2008-04-29 CN CN200880128926.1A patent/CN102015311B/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6758552B1 (en) * | 1995-12-06 | 2004-07-06 | Hewlett-Packard Development Company | Integrated thin-film drive head for thermal ink-jet printer |
KR20000026006A (ko) * | 1998-10-16 | 2000-05-06 | 윤종용 | 압전 효과를 이용한 잉크젯 프린터 헤드 및 그 제조방법 |
EP1366906A1 (en) * | 2002-05-31 | 2003-12-03 | Hewlett-Packard Company | Chamber having a protective layer |
US6846068B2 (en) * | 2002-08-09 | 2005-01-25 | Samsung Electronics Co., Ltd. | Monolithic ink-jet printhead and method for manufacturing the same |
US20040035823A1 (en) * | 2002-08-26 | 2004-02-26 | Samsung Electronics Co., Ltd. | Monolithic ink-jet printhead and method of manufacturing the same |
US20060256162A1 (en) * | 2005-05-10 | 2006-11-16 | Canon Kabushiki Kaisha | Liquid jet head and method for producing the same |
Cited By (8)
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CN102909955A (zh) * | 2011-08-01 | 2013-02-06 | 夏普株式会社 | 液体排出喷嘴以及液体排出喷嘴的疏水层的再生方法 |
CN104002555B (zh) * | 2013-02-22 | 2017-04-19 | 精工爱普生株式会社 | 流道单元及其制造方法、液体喷射头、液体喷射装置 |
CN106457829A (zh) * | 2014-03-25 | 2017-02-22 | 惠普发展公司,有限责任合伙企业 | 打印头流体通道薄膜钝化层 |
TWI579401B (zh) * | 2015-01-30 | 2017-04-21 | 惠普發展公司有限責任合夥企業 | 列印頭塗層 |
CN108025553A (zh) * | 2015-09-28 | 2018-05-11 | 京瓷株式会社 | 喷嘴板及使用了该喷嘴板的液体喷出头以及记录装置 |
CN108025553B (zh) * | 2015-09-28 | 2019-09-24 | 京瓷株式会社 | 喷嘴板及使用了该喷嘴板的液体喷出头以及记录装置 |
CN110023088A (zh) * | 2017-01-31 | 2019-07-16 | 惠普发展公司,有限责任合伙企业 | 流体喷射装置中的原子层沉积氧化层 |
CN110023088B (zh) * | 2017-01-31 | 2021-09-03 | 惠普发展公司,有限责任合伙企业 | 流体喷射装置中的原子层沉积氧化层 |
Also Published As
Publication number | Publication date |
---|---|
CN102015311B (zh) | 2015-05-20 |
US20110018938A1 (en) | 2011-01-27 |
US8333459B2 (en) | 2012-12-18 |
EP2271496A4 (en) | 2011-04-27 |
EP2271496B1 (en) | 2014-11-12 |
EP2271496A1 (en) | 2011-01-12 |
WO2009134225A1 (en) | 2009-11-05 |
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