CN102002760A - Method for splicing short silicon rods - Google Patents
Method for splicing short silicon rods Download PDFInfo
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- CN102002760A CN102002760A CN 201010531715 CN201010531715A CN102002760A CN 102002760 A CN102002760 A CN 102002760A CN 201010531715 CN201010531715 CN 201010531715 CN 201010531715 A CN201010531715 A CN 201010531715A CN 102002760 A CN102002760 A CN 102002760A
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- short silicon
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Abstract
The invention relates to a method for splicing short silicon rods in a process of processing a silicon solar battery sheet, which comprises the steps of: grinding end faces, cleaning, gluing, splicing and curing. The short silicon rods are sliced after spliced by adopting the method, the line breaking rate is remarkably reduced, and the silicon yield and the silicon resource utilization rate are greatly improved.
Description
Technical field
The invention belongs to the crystal silicon solar batteries technical field, particularly relate to the adhering method of the short-and-medium silicon rod of a kind of crystal silicon solar batteries sheet course of processing.
Background technology
Generally through crystal growth, segmentation, evolution, flour milling, sticking rod, section, cleaning, check, photovoltaic generation and semicon industry develop rapidly crystal silicon solar batteries machining process flow process in recent years, and the processing of silicon chip is had higher requirement.Because certainly lead to the silicon rod of random length in the crystal pulling process, silicon rod also certainly leads to the short silicon rod of random length in fragmentation procedure, the short silicon rod of Chan Shenging accounts for more than 30% of sum like this.Short silicon rod how to handle these nonstandard length has become the important technological problems that must solve.At present, the preceding elder generation of general section is bonded at silicon rod respectively on glass, and promptly sticking rod is cut into slices for two one group then simultaneously.Treating method to short silicon rod is: several short silicon rods directly are bonded at the silicon rod that gathers together into a sl. on glass, and then cut into slices, can leave the slit but be bonded at when on glass between short silicon rod, during section, require the slit preferential alignment between short silicon rod, influenced normally carrying out of sectioning under a lot of situations, the broken string situation happens occasionally, especially when the end face unfairness, when the slit between perhaps short silicon rod is unjustified, it is even more serious to break, and causes the silicon chip yield rate low, the silicon resource waste.
Summary of the invention
The present invention is directed to above-mentioned the deficiencies in the prior art, proposed a kind of adhering method of lacking silicon rod, cut into slices after short silicon rod adopts this method bonding, outage significantly descends, and silicon chip yield rate and silicon resource utilization ratio improve greatly.
The technical scheme that technical solution problem of the present invention is taked is, a kind of adhering method of lacking silicon rod comprises face grinding, cleaning, gluing, bonding and curing schedule, wherein:
⑴ face grinding: the end face that is used for bonding short silicon rod should be vertical with the side, if end face and side non-vertical then need end face is carried out plain grinding, makes end face and lateral vertical;
⑵ clean: clean with the bonding end face for the treatment of of clean-out system the short silicon rod of end face and lateral vertical, and stand-by behind the complete drying;
⑶ gluing: the bonding end face for the treatment of of tackiness agent evenly being coated cleaning of short silicon rod and complete drying;
⑷ bonding: with one the short silicon rod of coating adhesive cleaned with one and the short silicon rod of complete drying treat that bonding end face is relative, evenly firmly push, maintenance is straight and bonding;
⑸ solidify: the unnecessary tackiness agent of seam crossing is removed in bonding firm back, and leaves standstill and make it completely solidified.
As a kind of improvement, at described gluing step ⑶, earlier described short silicon rod clean and the periphery for the treatment of bonding end face of complete drying sticks the non cohesive gel band so that the removing of bonding back seam crossing excess adhesive.
As a kind of preferred, at described curing schedule ⑸, described to leave standstill the solidified time be 4～5 hours.
Tackiness agent of the present invention adopts two-component adhesive usually, before gluing step ⑶, A, B two components is mixed to scale.
In the present invention, ten fens keys of face grinding step ⑴, the end face unfairness will cause the generation of breaking because of the climbing phenomenon occurring in when section.
Implement the present invention to short silicon rod carry out bonding after, sticking excellent operation becomes sticking long silicon rod from sticking two short silicon rods, has saved the operation of slit alignment in the slicing process, and the working efficiency of gluing excellent operation and slicing process is improved greatly; Cause the generation of breaking because of the climbing phenomenon occurring when particularly having avoided section, outage significantly descends, and silicon chip yield rate and silicon resource utilization ratio improve greatly simultaneously.
Embodiment
At first the end face to end face and the short silicon rod of side off plumb carries out barreling, makes end face and lateral vertical; Clean with the bonding end face for the treatment of of clean-out system short silicon rod, stand-by behind the complete drying; The preparation tackiness agent adopts the DL-511 glue of the capable Science and Technology Ltd. in Hangzhou, and A glue and B glue are accurately weighed with 2: 1 mass ratio and mixed, and is stand-by; The periphery for the treatment of bonding end face at short silicon rod sticks the non cohesive gel band; Tackiness agent is evenly coated the bonding end face for the treatment of of short silicon rod with little scoop; Then with one coating adhesive short silicon rod and another short silicon rod treat that bonding end face is relative, evenly firmly extruding, maintenance is straight and bonding; Slightly just,, treat the unnecessary tackiness agent of bonding firm back removing seam crossing, then leave standstill and made it completely solidified in 5 hours.
Claims (3)
1. an adhering method of lacking silicon rod is characterized in that, comprises face grinding, cleaning, gluing, bonding and curing schedule, wherein:
⑴ face grinding: the end face that is used for bonding short silicon rod should be vertical with the side, if end face and side non-vertical then need end face is carried out plain grinding, makes end face and lateral vertical;
⑵ clean: clean with the bonding end face for the treatment of of clean-out system the short silicon rod of end face and lateral vertical, and stand-by behind the complete drying;
⑶ gluing: the bonding end face for the treatment of of tackiness agent evenly being coated cleaning of short silicon rod and complete drying;
⑷ bonding: with one the short silicon rod of coating adhesive cleaned with one and the short silicon rod of complete drying treat that bonding end face is relative, evenly firmly push, maintenance is straight and bonding;
⑸ solidify: the unnecessary tackiness agent of seam crossing is removed in bonding firm back, and leaves standstill and make it completely solidified.
2. a kind of adhering method of lacking silicon rod according to claim 1, it is characterized in that, at described gluing step ⑶, earlier described short silicon rod clean and the periphery for the treatment of bonding end face of complete drying sticks the non cohesive gel band so that the removing of bonding back seam crossing excess adhesive.
3. a kind of adhering method of lacking silicon rod according to claim 1 is characterized in that, at described curing schedule ⑸, described to leave standstill the solidified time be 4～5 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010531715 CN102002760A (en) | 2010-11-04 | 2010-11-04 | Method for splicing short silicon rods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010531715 CN102002760A (en) | 2010-11-04 | 2010-11-04 | Method for splicing short silicon rods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102002760A true CN102002760A (en) | 2011-04-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010531715 Pending CN102002760A (en) | 2010-11-04 | 2010-11-04 | Method for splicing short silicon rods |
Country Status (1)
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| CN (1) | CN102002760A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102514109A (en) * | 2011-12-30 | 2012-06-27 | 上海硅酸盐研究所中试基地 | Fixed and aligned cutting method of silicon carbide crystal |
| CN102975301A (en) * | 2012-11-16 | 2013-03-20 | 晶科能源有限公司 | Adhesion process of silicon rod and glass plate |
| CN103538157A (en) * | 2011-12-31 | 2014-01-29 | 英利能源（中国）有限公司 | Method for cutting crystalline silicon blocks |
| CN109808093A (en) * | 2019-04-16 | 2019-05-28 | 江苏美科硅能源有限公司 | A kind of silicon wafer dicing method |
| CN113136625A (en) * | 2020-01-16 | 2021-07-20 | 内蒙古中环光伏材料有限公司 | Solar silicon square rod splicing method |
| CN113355749A (en) * | 2020-03-06 | 2021-09-07 | 内蒙古中环光伏材料有限公司 | Solar silicon round bar splicing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101474830A (en) * | 2008-12-11 | 2009-07-08 | 江苏海尚新能源材料有限公司 | Technological process for slicing solar energy grade six-cun monocrystalline silicon wafer |
| CN101664970A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Monocrystal silicon-rod butting technique |
| CN201459280U (en) * | 2009-07-17 | 2010-05-12 | 林永健 | Silicon single crystal rod |
-
2010
- 2010-11-04 CN CN 201010531715 patent/CN102002760A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101474830A (en) * | 2008-12-11 | 2009-07-08 | 江苏海尚新能源材料有限公司 | Technological process for slicing solar energy grade six-cun monocrystalline silicon wafer |
| CN201459280U (en) * | 2009-07-17 | 2010-05-12 | 林永健 | Silicon single crystal rod |
| CN101664970A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Monocrystal silicon-rod butting technique |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102514109A (en) * | 2011-12-30 | 2012-06-27 | 上海硅酸盐研究所中试基地 | Fixed and aligned cutting method of silicon carbide crystal |
| CN103538157A (en) * | 2011-12-31 | 2014-01-29 | 英利能源（中国）有限公司 | Method for cutting crystalline silicon blocks |
| CN103538157B (en) * | 2011-12-31 | 2015-09-09 | 英利能源（中国）有限公司 | The cutting method of crystalline silicon blocks |
| CN102975301A (en) * | 2012-11-16 | 2013-03-20 | 晶科能源有限公司 | Adhesion process of silicon rod and glass plate |
| CN109808093A (en) * | 2019-04-16 | 2019-05-28 | 江苏美科硅能源有限公司 | A kind of silicon wafer dicing method |
| CN113136625A (en) * | 2020-01-16 | 2021-07-20 | 内蒙古中环光伏材料有限公司 | Solar silicon square rod splicing method |
| CN113355749A (en) * | 2020-03-06 | 2021-09-07 | 内蒙古中环光伏材料有限公司 | Solar silicon round bar splicing method |
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Application publication date: 20110406 |