CN101996576B - Display device - Google Patents
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- CN101996576B CN101996576B CN 201010255965 CN201010255965A CN101996576B CN 101996576 B CN101996576 B CN 101996576B CN 201010255965 CN201010255965 CN 201010255965 CN 201010255965 A CN201010255965 A CN 201010255965A CN 101996576 B CN101996576 B CN 101996576B
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Abstract
A display device includes several pixels, each of which has a light-emitting unit, a memory circuit and a drive circuit. The memory circuit memorizes an image data, the drive circuit is coupled to the light-emitting unit and the memory circuit and drives the light-emitting unit based on the image data. In the display device, a data line does not need to receive image data continuously to keep theimage data in the memory circuit. In this way, a data drive does not need to memorize pixel data continuously and write the pixel data to the corresponding pixel, and an additional electric power does not need to be provided to the data drive, such that power consumption can be reduced. Said drive mode is especially beneficial to a dark display condition.
Description
Technical field
The present invention is about a kind of display device, especially in regard to a kind of Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display device.
Background technology
In recent years, Organic Light Emitting Diode (OLED) reaches the low many advantages of cost easily because having high brightness, full-colorization, wide viewing angle, autoluminescence, high answer speed, deflection, processing procedure, also meets the characteristic demand of flat display apparatus than lcd technology.
Fig. 1 is the synoptic diagram of the image element circuit of known organic LED display device.Please refer to shown in Figure 1ly, image element circuit 10 is connected with staggered sweep trace S and the data line D that is matrix, and has a n type thin film transistor (TFT) 11, a p-type thin film transistor (TFT) 12, a capacitor 13 and an Organic Light Emitting Diode 14.Wherein, the gate of n type thin film transistor (TFT) 11 is connected with sweep trace S, and drain is connected with data line D, and source electrode then is connected with p-type thin film transistor (TFT) 12 and capacitor 13.Therefore, in the picture frame time (frame time), when sweep trace S output scanning signal was opened n type thin film transistor (TFT) 11, image data inputed to capacitor 13 by data line D through n type thin film transistor (TFT) 11, and p-type thin film transistor (TFT) 12 is to cut out at this moment.Then, n type thin film transistor (TFT) 11 cuts out, and p-type thin film transistor (TFT) 12 can be opened according to stored image data in the capacitor 13, so that shinny from the current drives Organic Light Emitting Diode 14 of power supply Vdd input.
Storer 15 stores the image data that should write to image element circuit 10, and gate pole driver 16 control image element circuits 10 receive image data from source electrode driver 17, make source electrode driver 17 that the image data that storer 15 stores is write to image element circuit 10.
With the resolution of QVGA, the pixel that always has 320 row is connected with data line D.And the aanalogvoltage of corresponding image data can be orderly sent to each pixel by data line D.Before time, each pixel must be kept the brightness of the accurate position of aanalogvoltage of corresponding input at next picture frame.Because each pixel intensity is the function of the gate voltage of p-type thin film transistor (TFT) 12, so the gate voltage of p-type thin film transistor (TFT) 12 must be kept fixing in the picture frame time (about 16.6 microseconds) by capacitor 13.
Yet, no matter be n type thin film transistor (TFT) 11 or p-type thin film transistor (TFT) 12, the problem of leakage current (leakage current) is arranged, thereby can consume the electric flux that is stored in the capacitor 13, and cause the voltage quasi position of image data to change.After after a while (for example: greater than the picture frame time), the gate voltage of p-type thin film transistor (TFT) 12 namely can't be kept.So, also may cause p-type thin film transistor (TFT) 12 to open or to close according to correct image data in the time at a picture frame, unless supply new image data, but so also can increase the power consumption of organic LED display device.
Summary of the invention
The display device that the purpose of this invention is to provide a kind of low-power consumption.
The present invention can realize by the following technical solutions.
Comprise a plurality of pixels according to a kind of display device of the present invention, each pixel has a luminescence unit, a memory circuit and one drive circuit.Memory circuit stores an image data, and driving circuit and luminescence unit and memory circuit couple, and drives luminescence unit according to image data.
In one embodiment, described luminescence unit is Organic Light Emitting Diode.
In one embodiment, described memory circuit is static RAM or can be with the capacitor of digital form storage data.
In one embodiment, described pixel also comprises a pattern commutation circuit, couple with described memory circuit and a pattern control line, control described driving circuit according to being stored in the described image data of described memory circuit with a general mode or the described luminescence unit of an in-pixel memory mode activated.
In one embodiment, described pattern commutation circuit comprises enables switch and a back coupling switch, enable switch and described driving circuit and described memory circuit and couple, control described driving circuit according to being stored in the described image data of described memory circuit with described general mode or the described luminescence unit of described in-pixel memory mode activated; Feedback switch and describedly enable switch and described luminescence unit couples, when described luminescence unit is luminous, described back coupling switch open and connect described switch and the bias voltage lead enabled.
In one embodiment, described display device also comprises a plurality of sweep traces and a plurality of data line, and described sweep trace couples with described pixel respectively, and described data line couples with described pixel respectively.
In one embodiment, each pixel also comprises an on-off circuit, its couple described memory circuit, described sweep trace one of them, and described data line one of them, wherein under described general mode, described sweep trace output one scan signal is opened described on-off circuit, and described data line writes described image data to described memory circuit.
In one embodiment, the leakage current of described on-off circuit is greater than the leakage current of described pattern commutation circuit, and the image data that makes described memory circuit store utilizes described uneven leakage current to keep.
In one embodiment, in described in-pixel memory pattern, a high voltage level provides to described data line, and does not have sweep signal to provide to described sweep trace.
In one embodiment, described image display system also comprises a display device, has an organic electroluminescence assembly.
By technique scheme, display device of the present invention has following advantage at least:
In display device of the present invention, each pixel can have a memory circuit, with in picture frame memory image data in the time.Therefore, do not need to be received by data line constantly the characteristic of image data, can keep the image data in the memory circuit.Thus, source electrode driver need not store pixel data constantly and it is write to respective pixel, and making does not need to provide additional power to source electrode driver in the case, thereby can reduce power consumption.This type of drive demonstration situation to slightly dark especially is useful.
Moreover, display device of the present invention can comprise that also the pattern commutation circuit switches general mode or in-pixel memory pattern, and therefore, display device can utilize above-mentioned low-power consumption to drive, perhaps utilize traditional type of drive, also can increase range of application of the present invention whereby.
Description of drawings
Fig. 1 is the synoptic diagram of the image element circuit of known organic LED display device;
Fig. 2 is the calcspar of circuit of the display device of one embodiment of the invention;
Fig. 3 A and Fig. 3 B are the synoptic diagram of circuit of each pixel of display device of one embodiment of the invention;
Fig. 4 A is that the power consumption of known display device of not having a memory circuit represents curve synoptic diagram;
Fig. 4 B is that the power consumption that present embodiment has a display device of memory circuit represents curve synoptic diagram;
Fig. 5 is the synoptic diagram of circuit of each pixel of display device of one embodiment of the invention;
Fig. 6 is the calcspar of circuit of the display device of another embodiment of the present invention;
Fig. 7 is the synoptic diagram of circuit of each pixel of display device of Fig. 6; And
Fig. 8 to Figure 11 is the synoptic diagram in circuit when running of Fig. 7.
The main element symbol description:
10: image element circuit
11:n type thin film transistor (TFT)
12:p type thin film transistor (TFT)
13: capacitor
14: Organic Light Emitting Diode
15: storer
16: gate pole driver
17: source electrode driver
2,3: display device
20,20a, 30: pixel
21,31: luminescence unit
22,22a, 226～229,32: memory circuit
221,321: image data
222,224,225: transistor
223: impedance
23,23a, 33: driving circuit
231,331: transistor
24,24a, 34: on-off circuit
241,341: transistor
322: capacitor
35: the pattern commutation circuit
351: enable switch
352: the back coupling switch
41: gate pole driver
42: source electrode driver
C: pattern control line
D: data line
L: bias voltage lead
N: node
P: pixel
S: sweep trace
S1: scanning signal
Vdd, Vss: power supply
Embodiment
Hereinafter with reference to correlative type, a kind of display device of the preferred embodiment of the present invention is described.
Fig. 2 is the calcspar of circuit of the display device of one embodiment of the invention.Please refer to shown in Figure 2ly, a display device 2 comprises a plurality of pixels 20, and each pixel 20 has a luminescence unit 21, a memory circuit 22 and one drive circuit 23.
Shown in Fig. 2 and Fig. 3 A, driving circuit 23 has a transistor 231, and it can be p-type thin film transistor (TFT) or n type thin film transistor (TFT).
In the present embodiment, each pixel 20 comprises that also an on-off circuit 24 and memory circuit 22 couple, and in addition, on-off circuit 24 is coupled to wherein a sweep trace S and data line D wherein respectively.
Display device 2 also comprises a plurality of sweep trace S and data line D that couple with pixel 20 respectively.One gate pole driver 41 writes data to the sequential of pixel 20 in order to see through sweep trace S control, and one source pole driver 42 writes to pixel 20 in order to see through data line D with image data 221.
On-off circuit 24 control store circuit 22 are written into image data termly, and for instance, when on-off circuit 24 was opened according to the control of gate pole driver 41, source electrode driver 42 saw through data line D image data 221 is write to memory circuit 22.
Below, please refer to shown in Fig. 3 A, with the running of pixel of explanation present embodiment.Fig. 3 A is the synoptic diagram of the circuit of each pixel 20 in the display device 2 of present embodiment.Luminescence unit 21 can be Organic Light Emitting Diode, and display device 2 is organic LED display devices.Be noted that in Fig. 3 A, As can clearly demonstrate, and only represents the driving circuit of a pixel, so it is non-in order to limit the present invention.In addition, be not that memory circuit comprises a transistor 222 (for example n type thin film transistor (TFT)) and an impedance 223 in order to restriction for instance.
Therefore, at a picture frame in the time, when the one scan signal S1 on the sweep trace S opens the transistor 241 of on-off circuit 24, image data 221 inputs to storage in the memory circuit 22 by the transistor 241 of data line D process on-off circuit 24, then, the opening degree of the transistor 231 of stored image data 221 control driving circuits 23 in the memory circuit 22, and then control the electric current that inputs to luminescence unit 21 from power supply Vdd, with the luminous degree of control luminescence unit 21.
Because as the known organic LED display device of Fig. 1 must have external memory storage 15 to store the data of each pixel, and source electrode driver 17 must regularly export these data to pixel through data line.Compare down, because each pixel 20 of the display device of present embodiment has memory circuit 22, therefore, 22 needs of memory circuit refresh (refresh), and do not need to receive image data 221 by data line D constantly.In other words, just the mechanism that can utilize memory circuit 22 to refresh can keep the image data in the memory circuit 22.Thus, source electrode driver need not store pixel data constantly and it is write to respective pixel, and making does not need to provide additional power to source electrode driver in the case, thereby can reduce power consumption.
Be noted that memory circuit 22 also can have different designs, for example, shown in Fig. 3 B, memory circuit 22a is made of two reversers, and each reverser comprises a p-type thin film transistor (TFT) 224 and a n type thin film transistor (TFT) 225, and so it is non-limiting.In this special instruction is that reverser has certain driving force, so driving circuit 23 can be incorporated into the reverser of memory circuit 22a.
Fig. 4 A is the synoptic diagram that the power consumption of known organic LED display device of not having a storer represents curve, and Fig. 4 B is the synoptic diagram that represents curve as the power consumption that has the display device 2 of memory circuit among present embodiment Fig. 3 A.Among Fig. 4 A and Fig. 4 B, X-axis is represented the sweep trace quantity of display device, and Y-axis is represented power consumption, and wherein solid line is represented whole power consumptions of luminescence unit, and dotted line is represented the power consumption of drive integrated circult (IC).
Shown in Fig. 4 A, known source electrode driver must constantly write data to pixel, when the sweep trace of display device is got over for a long time, the power consumption of source electrode driver increases because source electrode driver must transmit more image datas to the pixel of different scanning line, and, when display device only during some show image or during the display device deepening, source electrode driver still can not stop, and its access memory continually still, therefore, the power of source electrode driver accounts for the total power consumption of most display device 2.
Compared to Fig. 4 A, shown in Fig. 4 B, because pixel 20 has memory circuit 22 and stores image data, make the picture of image be maintained.Therefore, source electrode driver 42 does not need to provide constantly image data to pixel 20, and source electrode driver 42 can stop to provide image data to pixel 20, makes to get over for a long time when the sweep trace of display device 2, and power consumption can not increase.
By Fig. 4 A and Fig. 4 B as can be known, in the display device 2 of present embodiment, the power consumption of drive integrated circult can not increase along with the size of display device 2 and increase, and the power consumption of whole display device is also more known low.
In the present embodiment, memory circuit 22 is to set the storage image data for, makes that the image data that provides additional power to source electrode driver to store to pixel 20 is inessential.Therefore, the power consumption of display device 2 can further reduce.
Yet, as the memory circuit 22 of Fig. 3 A or Fig. 3 B, the data that 22a only can remember 1 (bit), therefore, in order to increase the capacity of storage data, each pixel 20a as Fig. 5 has a plurality of memory circuits 226～229, driving circuit 23a has a plurality of transistors 231, and on-off circuit 24a has a plurality of transistors 241, and transistor 231 and transistor 241 couple with corresponding memory circuit 226～229 respectively.Whereby, can make the Organic Light Emitting Diode 21 of each pixel 20a can produce different gray scale variation.
For instance, memory circuit 226～229 can represent not coordination respectively, and for example: memory circuit 226 to memory circuit 229 represents leftmost bit to rightmost position.Each transistor 231 can be designed to have different driving forces, and corresponding to, the transistor 231 of position, a left side has stronger driving force.Wherein, the driving force of transistor 231 is anti-relevant with the equivalence group of transistor 231.
Please refer to shown in Figure 6ly, it is the calcspar of circuit of the display device 3 of another embodiment of the present invention.Display device 3 comprises a plurality of sweep trace S, data line D, pattern control line C, power lead (not shown) and a plurality of pixel 30, and each pixel 30 has a luminescence unit 31, a memory circuit 32, one drive circuit 33 and a pattern commutation circuit 35.
The pixel 20 of the arrangement of pixel 30 and variation and previous embodiment is similar, and the luminescence unit 21 of the kind of luminescence unit 31 and variation and previous embodiment is similar, so repeat no more.
Data line D respectively with the staggered homeotropic alignment of sweep trace S, and couple with pixel 30 respectively, pattern control line C be arranged in parallel with sweep trace S.
In the present embodiment, memory circuit 32 can be the described volatility of embodiment or non-volatile memory circuit as described above, and in addition, memory circuit 32 is discrete component, and the value of its storage is digital form.In addition, memory circuit 32 also can be that comprise can be with the capacitor of digital form storage data, and capacitor is the data that can present its record with figure pattern or simulation model.
Below, please refer to Fig. 7 to shown in Figure 11, with the running of the pixel 30 of explanation present embodiment.Fig. 7 is the synoptic diagram of present embodiment circuit of each pixel of display device 3 in Fig. 6.Be noted that in Fig. 7, for clearly demonstrating, only represent the circuit of a pixel, so it is non-in order to limit the present invention.And in the present embodiment, having a capacitor 322 with memory circuit 32 is example, and pattern commutation circuit 35 has the switch of enabling 351 and back coupling switch 352 is example, and so it is non-in order to limit the present invention.
As shown in Figure 7, enable switch 351 and driving circuit 33 and memory circuit 32 couple to control driving circuit 33 according to the image data of memory circuit 32 with general mode or in-pixel memory mode activated luminescence unit 31.Feedback switch 352 with enable switch 351 and luminescence unit 31 couples.Luminescence unit 31 has negative electrode and anode, and the drain of the gate of the negative electrode of luminescence unit 31 and back coupling switch 352 and the transistor 331 of driving circuit 33 couples.The anode of luminescence unit 31 and a power lead (power supply Vss) couple.
The transistor 331 of driving circuit 33 is p-type thin film transistor (TFT)s, the source electrode of transistor 331 is connected to a power lead (power supply Vdd), wherein power lead extends along the respective column of pixel 30, and the drain of an end of the gate of transistor 331 and the capacitor 322 of memory circuit 32, the transistor 341 of on-off circuit 34 and the drain of enabling switch 351 are connected.In this example, the other end of capacitor 322 is connected with power lead (power supply Vdd).
Enabling switch 351 is n type thin film transistor (TFT)s, and the gate and the pattern control line C that enable switch 351 couple, and wherein pattern control line C extends along the respective column of pixel 30.Enabling the drain of switch 351 and the drain of back coupling switch 352 couples.
Back coupling switch 352 is n type thin film transistor (TFT)s, and source electrode and a bias voltage lead L of back coupling switch 352 couple, and wherein bias voltage lead L extends along the corresponding row of pixel 30.For instance, the bias voltage lead is a low potential lead.
If enabling switch 351 closes, the image data 321 that capacitor 322 stores can be understood with analog form, and the voltage level of image data 321 is controlled the size of current of the transistor 331 of flowing through; Open if enable switch 351, capacitor 322 stored image datas 321 can be understood with digital form, and this is the in-pixel memory pattern, and it is low-power consumption mode that this operating mode can be used as.
As shown in Figure 8, under general mode, memory circuit 32 is written into image data 321 termly, and memory circuit 32 presents the data of storage with simulation model, and driving circuit 33 drives luminescence units 31 according to image data 321.
When enabling switch 351 and close, pixel 30 runnings are at general mode.On-off circuit 34 control store circuit 32 are written into image data 321 termly.In time, sweep trace S output one scan signal S1 comes turn-on transistor 341, makes image data 321 input to capacitor 322 by data line D through transistor 341 at a picture frame.After pixel 30 has been scanned line S scanning, transistor 341 is closed, the voltage level of capacitor 322 is controlled the size of current of the transistor 331 of flowing through, and the current drives luminescence unit 31 of the transistor 331 of flowing through is luminous, and then makes the luminosity of luminescence unit 31 reach desired destination.
Please refer to Fig. 9 and shown in Figure 10, when enabling switch 351 unlatchings, pixel 30 runnings are in the in-pixel memory pattern.Under this pattern, do not scan signal on the sweep trace S and make transistor 341 close.
Under the in-pixel memory pattern, the image data 321 that memory circuit 32 stores is to utilize uneven leakage current to keep.For instance, take place uneven leakage current be because the leakage current of on-off circuit 34 greater than the leakage current of pattern commutation circuit 35.Uneven leakage current as shown in figure 10, because the leakage current of transistor 341 and back coupling switch 352 depends on the gate voltage at them, therefore, control transistor 341 and enable switch 351 and feedback the transistorized gate voltage of switch 352 and just can control these transistorized leakage currents effectively, so, can be greater than via enabling switch 351 and feedbacking the transistorized leakage current of switch 352 via the leakage current of transistor 341, the data that make the leakage current of memory circuit 32 be compensated and store are maintained.
If node N is in high levels, driving circuit 33 close and luminescence unit 31 not luminous, therefore, feedback that the transistor of switch 352 is closed and feedback path also is not activated, via the leakage current of on-off circuit 34 greater than keeping image data via enabling switch 351 and feedbacking the transistorized leakage current of switch 352.In this example, node N can maintain high levels, and then guarantees that driving circuit 33 is in closed condition, makes luminescence unit 31 still not luminous.
Can not see through transistor in order to ensure the electric charge that is stored in capacitor 322 and release, data line D can remain on high voltage level.Since the leakage current via transistor 341 is higher than the transistorized leakage current of enabling switch 351 and feedbacking switch 352, make the voltage of node N can become high levels or maintain high levels.Can guarantee so not open feedback path as node N in high voltage level the time, make voltage still can keep.
In addition, as shown in figure 11, under the in-pixel memory pattern, N is in low level when node, and driving transistors 331 is opened, in order to do the current drives luminescence unit 31 that makes through driving circuit 33.When luminescence unit 31 is luminous, feedback switch 352 to open, memory circuit 32 is seen through enable switch 351 and feedbacks switch 352 to be connected to bias voltage lead L.Bias voltage lead L can be the extra lead (as Fig. 7 to Fig. 9) that arranges, or is connected to the lead of luminescence unit 31.In another embodiment, bias voltage lead L can integrate with power lead Vss.In this example, the transistorized gate voltage of back coupling switch 352 is the forward drop of luminescence unit 31 approximately, makes the transistor of back coupling switch 352 open, thereby has started feedback path, and make node N still be in low level, luminescence unit is kept luminous.
In other words, pixel 30 has two kinds of display modes and is: first pattern and second pattern.
First pattern is general modfel, and under this pattern, simulated data writes to the capacitor 322 of pixel 30 as way in the past, the flow through electric current of luminescence unit 31 of the accurate and control in the aanalogvoltage position that driving transistors 331 stores according to capacitor 322.
Second pattern is the in-pixel memory pattern, and under this pattern, the memory circuit 32 of pixel can be isolated with sweep trace, and the data of memory circuit 32 can not changed or write again.Under second pattern, gate pole driver can the output scanning signal to pixel 30.This type of drive is especially to useful in slightly dark demonstration situation.
Under this pattern, luminescence unit 31 can present the brightness of gray scale variation.In addition, no matter whether luminescence unit 31 is luminous, back coupling switch 352 is adiaphorous.
In sum, in display device of the present invention, each pixel can have a memory circuit, with in picture frame memory image data in the time.Therefore, do not need to be received by data line constantly the characteristic of image data, can keep the image data in the memory circuit.Thus, source electrode driver need not store pixel data constantly and it is write to respective pixel, and making does not need to provide additional power to source electrode driver in the case, thereby can reduce power consumption.This type of drive demonstration situation to slightly dark especially is useful.
The above only is illustrative, and non-limiting.Anyly do not break away from spirit of the present invention and category, and to its equivalent modifications of carrying out or change, all should be included in the claim institute restricted portion.
Claims (5)
1. a display device comprises a plurality of sweep traces and a plurality of data line, it is characterized in that, also comprises:
A plurality of pixels respectively have:
One luminescence unit;
One memory circuit stores an image data;
One drive circuit couples with described luminescence unit and described memory circuit, and drives described luminescence unit according to described image data;
One pattern commutation circuit, couple with described memory circuit and a pattern control line, described pattern commutation circuit is controlled described driving circuit and is driven described luminescence unit according to the described image data that is stored in described memory circuit with general mode or in-pixel memory pattern; And
One on-off circuit, described on-off circuit couple described memory circuit, described sweep trace one of them, and described data line one of them;
Wherein said sweep trace and described data line couple with described pixel respectively, the leakage current of described on-off circuit is greater than the leakage current of described pattern commutation circuit, the leakage current of the leakage current of described on-off circuit and described pattern commutation circuit constitutes uneven leakage current, make the stored described image data of described memory circuit keep by described uneven leakage current, under described general mode, described sweep trace output one scan signal is opened described on-off circuit, and described data line writes described image data to described memory circuit.
2. display device according to claim 1 is characterized in that, described luminescence unit is Organic Light Emitting Diode.
3. display device according to claim 1 is characterized in that, described memory circuit is static RAM or can be with the capacitor of digital form storage data.
4. display device according to claim 1 is characterized in that, described pattern commutation circuit comprises:
One enables switch, this is enabled switch and described driving circuit and described memory circuit and couples, and controls described driving circuit and drives described luminescence unit according to the described image data that is stored in described memory circuit with described general mode or described in-pixel memory pattern; And
One feedbacks switch, this back coupling switch and describedly enable switch and described luminescence unit couples, and when described luminescence unit is luminous, this back coupling switch open and connect described switch and the bias voltage lead enabled.
5. display device according to claim 1 is characterized in that, under described in-pixel memory pattern, a high voltage level is provided to described data line, and does not have sweep signal to provide to described sweep trace.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23386209P | 2009-08-14 | 2009-08-14 | |
| US61/233,862 | 2009-08-14 | ||
| US12/841,715 | 2010-07-22 | ||
| US12/841,715 US8416159B2 (en) | 2010-07-22 | 2010-07-22 | Display apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101996576A CN101996576A (en) | 2011-03-30 |
| CN101996576B true CN101996576B (en) | 2013-09-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010255965 Active CN101996576B (en) | 2009-08-14 | 2010-08-13 | Display device |
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| JP (1) | JP5867989B2 (en) |
| CN (1) | CN101996576B (en) |
| TW (1) | TWI427596B (en) |
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| CN103578391B (en) * | 2012-08-03 | 2016-02-17 | 群康科技(深圳)有限公司 | Display device and image control method thereof |
| CN106297686B (en) * | 2016-05-18 | 2017-09-15 | 京东方科技集团股份有限公司 | Date storage method and pel array in pixel internal storage storage unit, pixel |
| CN110379393B (en) * | 2018-08-10 | 2022-01-11 | 友达光电股份有限公司 | Display device and gate driver |
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| JP3533074B2 (en) * | 1997-10-20 | 2004-05-31 | 日本電気株式会社 | LED panel with built-in VRAM function |
| AU2001285101A1 (en) * | 2000-08-21 | 2002-03-04 | Emagin Corporation | Grayscale static pixel cell for oled active matrix display |
| JP5004386B2 (en) * | 2000-09-18 | 2012-08-22 | 三洋電機株式会社 | Display device and driving method thereof |
| JP4552069B2 (en) * | 2001-01-04 | 2010-09-29 | 株式会社日立製作所 | Image display device and driving method thereof |
| JP2003123482A (en) * | 2001-03-27 | 2003-04-25 | Sony Corp | Method of reading stored data and semiconductor memory |
| GB0208656D0 (en) * | 2002-04-16 | 2002-05-29 | Koninkl Philips Electronics Nv | Electroluminescent display |
| JP5596898B2 (en) * | 2007-03-29 | 2014-09-24 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | Active matrix display device |
| JP5046226B2 (en) * | 2007-04-02 | 2012-10-10 | 株式会社ジャパンディスプレイウェスト | Image display device |
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2010
- 2010-08-06 TW TW99126340A patent/TWI427596B/en not_active IP Right Cessation
- 2010-08-11 JP JP2010180621A patent/JP5867989B2/en active Active
- 2010-08-13 CN CN 201010255965 patent/CN101996576B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5798746A (en) * | 1993-12-27 | 1998-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| TW548625B (en) * | 2000-11-30 | 2003-08-21 | Toshiba Corp | Display apparatus and its driving method |
| CN1357870A (en) * | 2000-12-07 | 2002-07-10 | 三洋电机株式会社 | Active matrix type display device |
| CN1692447A (en) * | 2002-05-10 | 2005-11-02 | 皇家飞利浦电子股份有限公司 | Memories and memory circuits |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201106325A (en) | 2011-02-16 |
| JP5867989B2 (en) | 2016-02-24 |
| JP2011039514A (en) | 2011-02-24 |
| CN101996576A (en) | 2011-03-30 |
| TWI427596B (en) | 2014-02-21 |
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Address after: 4, 1 floor, E District, Foxconn science and Technology Industrial Park, Longhua Town, Shenzhen, Guangdong, Baoan District 518000, China Patentee after: Qunkang Technology (Shenzhen) Co., Ltd. Patentee after: Innolux Display Group Address before: 4, 1 floor, E District, Foxconn science and Technology Industrial Park, Longhua Town, Shenzhen, Guangdong, Baoan District 518000, China Patentee before: Qunkang Technology (Shenzhen) Co., Ltd. Patentee before: Chimei Optoelectronics Co., Ltd. |