CN101866619B - Pixel circuit of organic light-emitting diode, display and driving method thereof - Google Patents
Pixel circuit of organic light-emitting diode, display and driving method thereof Download PDFInfo
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Abstract
The invention relates to a pixel circuit of an organic light-emitting diode, a display and a driving method thereof. The pixel circuit has a 3T2C framework, namely, three thin film transistors added with two capacitors, wherein after the circuit situation is driven by the corresponding scanning signal and data signal, the luminance shown by the pixel circuit is only associated with the data signal and is not associated with the threshold voltage of the transistors which drive a light-emitting component, the high system voltage received by the pixel circuit and the cross-over voltage of anode and cathode of the light-emitting component, so that the non-uniformity problem of the panel display of the organic light-emitting diode can be effectively improved/solved.
Description
Technical field
The invention relates to a kind of plane display technique, and particularly about a kind of image element circuit and driving method thereof of organic light emitting diode display.
Background technology
In recent years, the development of plane display technique is constantly weeded out the old and bring forth the new, Organic Light Emitting Diode (organic light emitting diode wherein, OLED), be called again organic electric-excitation luminescent (organicelectroluminescence, OEL), to have the not technology of new generation of readily accessible advantage of other flat-panel screens technology, comprise power saving, ultrathin, lightweight, autoluminescence, limit without the visual angle, reaction velocity is fast, photoelectric efficiency is high, need not backing structure and colorful filter structure, high contrast, high briliancy efficient, high brightness, polychrome and colour (RGB) establishment of component ability, the advantages such as the serviceability temperature scope is wide are considered to be following one of the plane display technique of development potentiality that has most.
The OLED display is broadly divided into passive matrix (passive matrix, PM) OLED display and active-matrix (active matrix, AM) OLED display now.The former type of drive mainly is to utilize scanning means/mechanism to come moment to produce high brightness, so power consumption power is higher, assembly is more deteriorated, and is not suitable for developing resolution panels; In addition, the main type of drive of the latter is for utilizing thin film transistor (TFT) (TFT) element, and collocation electric capacity stores different data-signals, comes the GTG (grayscale) of each pixel on the control panel with this.
Because the AMOLED display is after scanned, pixel still can keep original brightness, and the AMOLED display not demand motive to very high brightness.Therefore, compared to the PMOLED display, the AMOLED display not only can reach better life-span performance, and can reach high-resolution demand.Therefore, present research is all advanced towards the AMOLED display that can be used for large-scale panel.
As shown in Figure 1, the image element circuit of traditional AMOLED display 100 adopts the frameworks of 2T1C mostly, and namely two thin film transistor (TFT) T1 and T2 add Single Capacitance C.Generally speaking, image element circuit 100 is to be subject to the driving of sweep signal Vscan and data-signal Vdata and luminous, and the brightness that presents is direct ratio/the be inversely proportional to intensity of data-signal Vdata.
On practice, because the system high voltage OVDD of each image element circuit 100 in the AMOLED display links together, to such an extent as to when each image element circuit 100 is subject to the driving of its corresponding sweep signal Vscan and data-signal Vdata, can produce pressure drop effect with the impedance that circuit itself has owing to flow through in order to the electric current on the circuit of transmission system high voltage OVDD.Thus, will cause to some extent difference of the received system high voltage OVDD of each image element circuit 100.
Add, because the impact of manufacturing process, the threshold voltage (threshold voltage, Vth) in order to the thin film transistor (TFT) T2 that drives Organic Light Emitting Diode (OLED) OD in each image element circuit 100 is probably not identical.Therefore, react on the received system high voltage OVDD of each image element circuit 100 to some extent in difference and each image element circuit 100 in order to the threshold voltage of the thin film transistor (TFT) T2 that drives Organic Light Emitting Diode (OLED) OD in the not identical situation, even if will cause applying identical data-signal Vdata to each image element circuit 100, also can cause the electric current of Organic Light Emitting Diode (OLED) OD of each image element circuit 100 of flowing through different, thereby so that the brightness that each image element circuit 100 presents also can be different, and this also is to affect the main cause that oled panel shows unevenness.
Summary of the invention
The problem that faces in view of prior art,, the object of the present invention is to provide image element circuit and the driving method thereof of a kind of Organic Light Emitting Diode (OLED) display, show the problem of unevenness in order to effectively to improve/to solve oled panel.
The present invention proposes a kind of image element circuit, and it comprises the first transistor, transistor seconds, the 3rd transistor, the first electric capacity, the second electric capacity, and luminescence component (OLED).Wherein, the grid of the first transistor is in order to receive the first sweep signal, and the first leakage of the first transistor or source electrode are then in order to reception of data signal.The grid of transistor seconds is in order to receive the second sweep signal, and the first leakage of transistor seconds or source electrode are then in order to receive reference signal.The first end of the first electric capacity is electrically connected second of the first transistor and leaks or source electrode, and the second end of the first electric capacity then is electrically connected second of transistor seconds and leaks or source electrode.The 3rd transistorized grid is electrically connected second of the first transistor and leaks or source electrode, and the 3rd transistorized the first leakage or source electrode are electrically connected to the first voltage, and the 3rd transistorized the second leakage or source electrode then are electrically connected second of transistor seconds and leak or source electrode.The first end of the second electric capacity is electrically connected the 3rd transistorized first and leaks or source electrode, and the second end of the second electric capacity then is electrically connected the 3rd transistorized second and leaks or source electrode.The first end of luminescence component is electrically connected the 3rd transistorized second and leaks or source electrode, and the second end of luminescence component then is electrically connected to second voltage.
In one embodiment of this invention, the first end of luminescence component and the second end are respectively anode and negative electrode, and the first voltage and second voltage are respectively system high voltage and system low-voltage.With this understanding, first, second and the 3rd transistor are respectively the N-type transistor.
In another embodiment of the present invention, the first end of luminescence component and the second end are respectively negative electrode and positive electrode, and the first voltage and second voltage are respectively system low-voltage and system high voltage.With this understanding, first, second and the 3rd transistor are respectively the P transistor npn npn.
The present invention proposes a kind of display with image element circuit that the invention described above proposes in addition.
The present invention also proposes a kind of driving method that is suitable for driving the image element circuit that the invention described above proposes, and it comprises: during the replacement during the picture, the 3rd transistorized grid and second of resetting leaks or the voltage quasi position of source electrode; Between the storage life during the same frame, record the 3rd transistorized threshold voltage; During writing during same frame, the data writing signal is to luminescence component; And between the light emission period during the same frame, only react on data-signal and cause luminescence component luminous.
Based on above-mentioned, image element circuit proposed by the invention is the framework (namely three thin film transistor (TFT)s add two electric capacity) that adopts 3T2C, and after its circuit aspect is subject to the driving of corresponding sweep signal and data-signal, the brightness that can cause image element circuit to present is only relevant with data-signal, and irrelevant with the cross-pressure of the positive negative electrode of the transistorized threshold voltage that drives luminescence component, system high voltage that image element circuit receives and luminescence component, thereby effectively improved/solved the problem that oled panel shows unevenness.
Description of drawings
Fig. 1 is the synoptic diagram of the image element circuit of traditional active matrix organic LED (AMOLED) display;
Fig. 2 A is the system block diagrams of Organic Light Emitting Diode (OLED) display of one embodiment of the invention;
Fig. 2 B is the drive waveforms figure of the image element circuit of Fig. 2 A;
Fig. 3 A to Fig. 3 D is the running synoptic diagram of the image element circuit of Fig. 2 A;
Fig. 4 A is the system block diagrams of Organic Light Emitting Diode (OLED) display of another embodiment of the present invention;
Fig. 4 B is the drive waveforms figure of the image element circuit of Fig. 4 A;
Fig. 5 A is the system block diagrams of Organic Light Emitting Diode (OLED) display of yet another embodiment of the invention;
Fig. 5 B is the drive waveforms figure of the image element circuit of Fig. 5 A.
[primary clustering symbol description]
100, Pix, Pix ': image element circuit
200,400,500: Organic Light Emitting Diode (OLED) display
210: time schedule controller
220: data driven unit
230,240,510: scanning driving device
250,250 ': display panel
260: the reference signal generation device
A, B: node
C, C1, C2: electric capacity
T1～T3, T1 '～T3 ': transistor
OD: Organic Light Emitting Diode/luminescence component
DL: data line
SL1, SL2: sweep trace
Vscan, Vscan1, Vscan2, Vscan1 ', Vscan2 ': sweep signal
Vdata: data-signal
Vsus: reference signal
VD, VD (N-1), VD (N): data voltage
VR: reference voltage
OVDD: system high voltage
OVSS: system low-voltage
P1: during the replacement
P2: between the storage life
P3: during writing
P4: between light emission period
Embodiment
Now will in detail with reference to example embodiment of the present invention, the example of described example embodiment be described in the accompanying drawings.In addition, all possibility parts, the assembly of use same numeral in graphic and embodiment/the identical or similar portions of member representative.
Fig. 2 A is the system block diagrams of Organic Light Emitting Diode (OLED) display of one embodiment of the invention.Please refer to Fig. 2 A, organic light emitting diode display 200 comprises time schedule controller (timing controller, T-con) 210, data driven unit (data driving device) 220, scanning driving device (scan driving device) 230 and 240, display panel (display panel) 250, and reference signal generation device (reference signal generating device) 260.
In the present embodiment, display panel 250 comprises at least one data line DL, at least two sweep trace SL1 and SL2, and at least one image element circuit Pix.Wherein, data line DL is electrically connected data driven unit 220, is controlled by the data-signal Vdata that time schedule controller 210 provides in order to receive data drive unit 220.Sweep trace SL1 is electrically connected the first scanning driving device 230, is controlled by the sweep signal Vscan1 that time schedule controller 210 provides in order to receive scanning driving device 230.Sweep trace SL2 is electrically connected scanning driving device 240, is controlled by the second sweep signal Vscan2 that time schedule controller 210 provides in order to receive scanning driving device 240.
On the other hand, image element circuit Pix comprises transistor T 1～T3 (for example being thin film transistor (TFT)), capacitor C 1 and C2, and luminescence component OD.Wherein, transistor T 1～T3 is the N-type transistor, and luminescence component OD is Organic Light Emitting Diode (OLED).In the present embodiment, the grid of N-type transistor T 1 (gate) is electrically connected sweep trace SL1 to receive sweep signal Vscan1; The drain electrode of N-type transistor T 1 (drain) then is electrically connected data line DL with reception of data signal Vdata.The grid of N-type transistor T 2 is electrically connected sweep trace SL2 to receive sweep signal Vscan2; The reference signal Vsus that the drain electrode of N-type transistor T 2 then provides in order to receive reference signal generation device 260.
The first end of capacitor C 1 is electrically connected the source electrode of N-type transistor T 1, and the second end of capacitor C 1 then is electrically connected the source electrode of N-type transistor T 2.The grid of N-type transistor T 3 is electrically connected the source electrode of N-type transistor T 1, and the drain electrode of N-type transistor T 3 is electrically connected to system high voltage OVDD, and the source electrode of N-type transistor T 3 then is electrically connected the source electrode of N-type transistor T 2.The first end of capacitor C 2 is electrically connected the drain electrode of N-type transistor T 3, and the second end of capacitor C 2 then is electrically connected the source electrode of N-type transistor T 3.The anode of luminescence component OD (anode) is electrically connected the source electrode of N-type transistor T 3, and the negative electrode of luminescence component OD (cathode) then is electrically connected to system low-voltage OVSS.
Based on above-mentioned, below will do one for the running of image element circuit Pix and encyclopaedize to have to field of the present invention and usually know the knowledgeable's reference.
Fig. 2 B is the drive waveforms figure of the image element circuit Pix of Fig. 2 A.Fig. 3 A to Fig. 3 D is the running synoptic diagram of the image element circuit Pix of Fig. 2 A.Please first with reference to Fig. 2 B, in the present embodiment, during OLED display 200 picture (frame period) by (reset period) P1 during resetting, between the storage life between (storing period) P2, during writing (writing period) P3 and light emission period (emissionperiod) P4 formed.
Then, please merge with reference to Fig. 2 B and Fig. 3 A, in replacement period P 1, because sweep signal Vscan1 and Vscan2 are in the state that enables (enable), to such an extent as to N-type transistor T 1 all can conducting (turn on) with T2.At this moment, data driven unit 220 can provide the data-signal Vdata with reference voltage VR to image element circuit Pix, come image element circuit Pix is carried out precharge (pre-charge) with this, and the voltage quasi position of the grid of replacement N-type transistor T 3.On the other hand, reference signal generation device 260 can provide reference signal Vsus to image element circuit Pix, with the voltage quasi position of the source electrode of this N-type transistor T 3 of resetting.Wherein, the voltage quasi position of reference voltage VR is greater than the voltage quasi position of reference signal Vsus.Thus, the voltage quasi position of node A (the namely grid voltage of N-type transistor T 3) equals the voltage quasi position of reference voltage VR; And the voltage quasi position of Node B (the namely source voltage of N-type transistor T 3) equals the voltage quasi position of reference signal Vsus.
And then, please merge with reference to Fig. 2 B and Fig. 3 B, P2 between the storage life is because sweep signal Vscan1 and Vscan2 are in respectively the state that enables with forbidden energy (disable), to such an extent as to N-type transistor T 1 can be kept conducting, and N-type transistor T 2 transfers to and closes (turn off).At this moment, because data driven unit 220 can continue to provide the data-signal Vdata with reference voltage VR to image element circuit Pix, to such an extent as to the voltage quasi position of node A still equals the voltage quasi position of reference voltage VR, and the voltage quasi position of Node B equals VR-Vth, thus the threshold voltage (Vth) of capacitor C 1 record N-type transistor T 3.Wherein, VR is the voltage quasi position of reference voltage VR; And Vth is the threshold voltage of N-type transistor T 3.
Afterwards, please merge with reference to Fig. 2 B and Fig. 3 C, at during writing P3, because sweep signal Vscan1 and Vscan2 are in respectively the state that enables with forbidden energy, to such an extent as to N-type transistor T 1 can be kept conducting, and N-type transistor T 2 can be kept and closes.At this moment, because can transferring to, data driven unit 220 provide data-signal Vdata with data voltage VD to image element circuit Pix (data-signal Vdata with the data voltage VD grid to N-type transistor T 3 namely is provided), to such an extent as to the voltage quasi position of node A is changed into the voltage quasi position of data voltage VD, and the voltage quasi position of Node B equals VR-Vth+a* (VD-VR).Wherein, a=C1/ (C1+C2); C1 is the capacitance of capacitor C 1; C2 is the capacitance of capacitor C 2; And VD is the voltage quasi position of data voltage VD.
At last, please merge with reference to Fig. 2 B and Fig. 3 D, P4 between light emission period is because sweep signal Vscan1 and Vscan2 are in the state of forbidden energy, to such an extent as to N-type transistor T 1 all can be closed with T2.At this moment, the voltage quasi position of node A equals VD+Voled+OVSS-a* (VD-VR)+Vth-VR, and the voltage quasi position of Node B equals Voled+OVSS.Wherein, Voled is the cross-pressure of the positive negative electrode of luminescence component OD.Thus, the flow through electric current of luminescence component OD equals K*[(1-a) * (VD-VR)] 2.Wherein, K is the fabrication process parameters that is associated with N-type transistor T 3, is generally constant.
Hence one can see that, P4 between light emission period, the flow through size of current only relevant with the data-signal Vdata with reference voltage VR and data voltage VD (namely luminescence component OD only react on data-signal Vdata and luminous) of luminescence component OD, and irrelevant in order to the cross-pressure (Voled) of the positive negative electrode of threshold voltage (Vth), the system high voltage OVDD that receives and the luminescence component OD of the N-type transistor T 3 that drives luminescence component OD with image element circuit Pix.Therefore, the image element circuit Pix of present embodiment just can improve/solve the problem that oled panel 250 shows unevenness effectively.
The image element circuit Pix of above-described embodiment realizes it with three N-type transistor T 1～T3 and two capacitor C 1 with C2, but the present invention is not restricted to this.
Fig. 4 A is the system block diagrams of Organic Light Emitting Diode (OLED) display 400 of another embodiment of the present invention, and Fig. 4 B is the drive waveforms figure of the image element circuit Pix ' of Fig. 4 A.Please merge with reference to Fig. 4 A and Fig. 4 B, organic light emitting diode display 200 is that from 400 differences the structure of display panel 250 and 250 ' is different.In the present embodiment, the image element circuit Pix ' in the display panel 250 ' and the image element circuit Pix in the display panel 250 present complementary structure.Clearer, image element circuit Pix ' realizes with C2 with three P transistor npn npn T1～T3 and two capacitor C 1.Thus, the sweep signal Vscan1 ' that present embodiment only need be reversed respectively Fig. 4 B with sweep signal Vscan1 and the Vscan2 of Fig. 2 B and Vscan2 ' are with after driving image element circuit Pix ', can reach/similar technology effect similar to a upper embodiment, so also no longer given unnecessary details at this.
On the other hand, above-described embodiment is to provide respectively sweep signal Vscan1 (or Vscan1 ') and Vscan2 (or Vscan2 ') to describe as an example of driving N transistor npn npn T1 and T2 (or P transistor npn npn T1 ' and T2 ') example with two scanning driving devices 230 and 240, but the present invention is not restricted to this.
Fig. 5 A is the system block diagrams of Organic Light Emitting Diode (OLED) display of yet another embodiment of the invention, and Fig. 5 B is the drive waveforms figure of the image element circuit Pix of Fig. 5 A.Please merge with reference to Fig. 5 A and Fig. 5 B, organic light emitting diode display 200 and 500 differences are that organic light emitting diode display 500 only has a scanning driving device 510, and this scanning driving device 510 can utilize existing any shift register mechanism/means to produce sweep signal Vscan1 and Vscan2.Thus, the practising way of scanning driving device 510 can be easy to the practising way of scanning driving device 230 and 240, and that its cost of manufacture also can be relative is cheap.
In the present embodiment, the data-signal Vdata that the sweep signal Vscan1 that provides by scanning driving device 510 and Vscan2 and data driven unit 220 provide drives the words of image element circuit Pix, then can reach equally similar to the aforementioned embodiment/similar technology effect, so also no longer given unnecessary details at this.
Yet, must it is worth mentioning that at this, if adopt sweep signal Vscan1 shown in Fig. 5 B and Vscan2 and data-signal Vdata to drive the words of image element circuit Pix, then the result of the type of drive of the unique Fig. 2 of being different from B is: in replacement period P 1, the voltage quasi position of node A can equal to have the voltage quasi position of the data-signal Vdata of data voltage VD (N-1), but not the as above voltage quasi position of the reference voltage VR of an embodiment.In addition, at other period P 2～P4, each other voltage quasi position of node A and B is all such as a same embodiment.In Fig. 5 B, label VD (N-1) is expressed as the data voltage of last data-signal Vdata; And label VD (N) is expressed as the instantly data voltage of data-signal Vdata.
In sum, image element circuit proposed by the invention (Pix/Pix ') be the framework (namely the thin film transistor (TFT) of three N-type/P types is added two electric capacity) that adopts 3T2C, and after its circuit aspect is subject to the driving of corresponding sweep signal (Vscan1/Vscan1 ' and Vscan2/Vscan2 ') and data-signal (Vdata), the brightness that can cause image element circuit to present is only relevant with data-signal, and with the transistorized threshold voltage (Vth) that drives luminescence component (OLED), the cross-pressure (Voled) of the positive negative electrode of the system high voltage that image element circuit receives (OVDD) and luminescence component is irrelevant, thereby is effectively improved/solve the problem that oled panel shows unevenness.
Although the present invention discloses as above with embodiment; so it is not to limit the present invention; have in the technical field under any and usually know the knowledgeable; without departing from the spirit and scope of the present invention; when doing a little change and retouching, so protection scope of the present invention is when being as the criterion with the scope that claim was defined.
Claims (10)
1. the image element circuit of an Organic Light Emitting Diode is characterized in that, comprising:
One the first transistor, the grid of described the first transistor be in order to receiving one first sweep signal, and in the leakage of described the first transistor or the source electrode one is in order to receive a data-signal;
One transistor seconds, the grid of described transistor seconds be in order to receiving one second sweep signal, and in the leakage of described transistor seconds or the source electrode one is in order to receive a reference signal;
One first electric capacity, the first end of described the first electric capacity are electrically connected the leakage of described the first transistor or in the source electrode another, and the second end of described the first electric capacity is electrically connected the leakage of described transistor seconds or in the source electrode another;
One the 3rd transistor, the described the 3rd transistorized grid is electrically connected the leakage of described the first transistor or in the source electrode another, one in the described the 3rd transistorized leakage or the source electrode is electrically connected to one first voltage, and in the described the 3rd transistorized leakage or the source electrode another is electrically connected the leakage of described transistor seconds or in the source electrode another;
One second electric capacity, the first end of described the second electric capacity are electrically connected in the described the 3rd transistorized leakage or the source electrode, and the second end of described the second electric capacity is electrically connected in the described the 3rd transistorized leakage or the source electrode another; And
One luminescence component, the first end of described luminescence component are electrically connected another in the described the 3rd transistorized leakage or the source electrode, and the second end of described luminescence component is electrically connected to a second voltage.
2. image element circuit as claimed in claim 1 is characterized in that, the first end of described luminescence component and the second end are respectively an anode and a negative electrode, and described the first voltage and described second voltage are respectively a system high voltage and a system low-voltage.
3. image element circuit as claimed in claim 2 is characterized in that, described the first transistor, described transistor seconds and described the 3rd transistor are respectively a N-type transistor.
4. image element circuit as claimed in claim 1 is characterized in that, the first end of described luminescence component and the second end are respectively a negative electrode and an anode, and described the first voltage and described second voltage are respectively a system low-voltage and a system high voltage.
5. image element circuit as claimed in claim 4 is characterized in that, described the first transistor, described transistor seconds and described the 3rd transistor are respectively a P transistor npn npn.
6. the display of an Organic Light Emitting Diode is characterized in that, comprising:
One display panel, described display panel comprises:
At least one data line is in order to receive a data-signal;
At least one the first sweep trace and one second sweep trace receive respectively one first sweep signal and one second sweep signal; And
At least one image element circuit, described image element circuit comprises:
One the first transistor, the grid of described the first transistor are electrically connected described the first sweep trace, and a described data line of electric connection in the leakage of described the first transistor or the source electrode;
One transistor seconds, the grid of described transistor seconds are electrically connected described the second sweep trace, and in the leakage of described transistor seconds or the source electrode one is in order to receive a reference signal;
One first electric capacity, the first end of described the first electric capacity are electrically connected the leakage of described the first transistor or in the source electrode another, and the second end of described the first electric capacity is electrically connected the leakage of described transistor seconds or in the source electrode another;
One the 3rd transistor, the described the 3rd transistorized grid is electrically connected the leakage of described the first transistor or in the source electrode another, one in the described the 3rd transistorized leakage or the source electrode is electrically connected to one first voltage, and in the described the 3rd transistorized leakage or the source electrode another is electrically connected the leakage of described transistor seconds or in the source electrode another;
One second electric capacity, the first end of described the second electric capacity are electrically connected in the described the 3rd transistorized leakage or the source electrode, and the second end of described the second electric capacity is electrically connected in the described the 3rd transistorized leakage or the source electrode another; And
One luminescence component, the first end of described luminescence component are electrically connected another in the described the 3rd transistorized leakage or the source electrode, and the second end of described luminescence component is electrically connected to a second voltage.
7. display as claimed in claim 6 is characterized in that, described display also comprises:
One data driven unit is electrically connected described data line, in order to described data-signal to be provided.
8. display as claimed in claim 6 is characterized in that, described display also comprises:
One first scanning driving device is electrically connected described the first sweep trace, in order to described the first sweep signal to be provided; And
One second scanning driving device is electrically connected described the second sweep trace, in order to described the second sweep signal to be provided.
9. display as claimed in claim 6 is characterized in that, described display also comprises:
The one scan drive unit is electrically connected described the first sweep trace and described the second sweep trace, in order to described the first sweep signal and described the second sweep signal to be provided.
10. the driving method of the image element circuit of an Organic Light Emitting Diode is characterized in that, is suitable for driving image element circuit as claimed in claim 1, and described driving method comprises:
During one during the picture reset, the voltage quasi position of another in reset the described the 3rd transistorized grid and leakage or the source electrode;
Between the storage life during the described picture, record the described the 3rd transistorized threshold voltage;
During writing during described picture provides described data-signal to the described the 3rd transistorized grid; And
Between the light emission period during the described picture, cause described luminescence component only to react on described data-signal and luminous.
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| CN2010101746406A CN101866619B (en) | 2010-05-06 | 2010-05-06 | Pixel circuit of organic light-emitting diode, display and driving method thereof |
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| CN2010101746406A CN101866619B (en) | 2010-05-06 | 2010-05-06 | Pixel circuit of organic light-emitting diode, display and driving method thereof |
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| CN102005182A (en) * | 2010-11-18 | 2011-04-06 | 友达光电股份有限公司 | Driving circuit of pixel and method for driving pixel |
| TWI436335B (en) * | 2011-03-17 | 2014-05-01 | Au Optronics Corp | Organic light emitting display having threshold voltage compensation mechanism and driving method thereof |
| CN102654972B (en) * | 2011-06-21 | 2015-08-12 | 京东方科技集团股份有限公司 | Active matrix organic light-emitting diode (AMOLED) panel and driving circuit thereof and method |
| TWI425472B (en) * | 2011-11-18 | 2014-02-01 | Au Optronics Corp | Pixel circuit and driving method thereof |
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