CN101866619A - Pixel circuit of organic light-emitting diode, display and driving method thereof - Google Patents
Pixel circuit of organic light-emitting diode, display and driving method thereof Download PDFInfo
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- CN101866619A CN101866619A CN201010174640A CN201010174640A CN101866619A CN 101866619 A CN101866619 A CN 101866619A CN 201010174640 A CN201010174640 A CN 201010174640A CN 201010174640 A CN201010174640 A CN 201010174640A CN 101866619 A CN101866619 A CN 101866619A
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Abstract
The invention relates to a pixel circuit of an organic light-emitting diode, a display and a driving method thereof. The pixel circuit has a 3T2C framework, namely, three thin film transistors added with two capacitors, wherein after the circuit situation is driven by the corresponding scanning signal and data signal, the luminance shown by the pixel circuit is only associated with the data signal and is not associated with the threshold voltage of the transistors which drive a light-emitting component, the high system voltage received by the pixel circuit and the cross-over voltage of anode and cathode of the light-emitting component, so that the non-uniformity problem of the panel display of the organic light-emitting diode can be effectively improved/solved.
Description
Technical field
The invention relates to a kind of plane display technique, and particularly about a kind of image element circuit and driving method thereof of organic light emitting diode display.
Background technology
In recent years, the development of plane display technique is constantly weeded out the old and bring forth the new, Organic Light Emitting Diode (organic light emitting diode wherein, OLED), be called organic electric-excitation luminescent (organicelectroluminescence again, OEL), be to have the not technology of new generation of readily accessible advantage of other flat-panel screens technology, comprise power saving, ultrathin, in light weight, autoluminescence, the restriction of no visual angle, reaction velocity is fast, the photoelectric efficiency height, need not backing structure and colorful filter structure, high contrast, high briliancy efficient, high brightness, polychrome and colour (RGB) establishment of component ability, advantages such as the serviceability temperature scope is wide are considered to be following one of the plane display technique of development potentiality that has most.
The OLED display is broadly divided into passive matrix (passive matrix, PM) OLED display and active-matrix (active matrix, AM) OLED display now.The former type of drive mainly is to utilize scanning means/mechanism to come moment to produce high brightness, so power consumption power is higher, the easy deterioration of assembly, and is not suitable for developing resolution panels; In addition, the main type of drive of the latter is for utilizing thin film transistor (TFT) (TFT) element, and collocation electric capacity stores different data-signals, comes the GTG (grayscale) of each pixel on the control panel with this.
Because the AMOLED display is after scanned, pixel still can keep original brightness, and the AMOLED display does not need to be driven into very high brightness.Therefore, compared to the PMOLED display, the AMOLED display not only can reach preferable life-span performance, and can reach high-resolution demand.Therefore, present research is all advanced towards the AMOLED display that can be used for large-scale panel.
As shown in Figure 1, the image element circuit of traditional AMOLED display 100 adopts the frameworks of 2T1C mostly, and just two thin film transistor (TFT) T1 and T2 add single capacitor C.Generally speaking, image element circuit 100 is to be subjected to the driving of sweep signal Vscan and data-signal Vdata and luminous, and the brightness that is presented is direct ratio/the be inversely proportional to intensity of data-signal Vdata.
On practice, because the system high voltage OVDD of each image element circuit 100 in the AMOLED display links together, to such an extent as to when each image element circuit 100 is subjected to the driving of its pairing sweep signal Vscan and data-signal Vdata, can produce pressure drop effect with the impedance that circuit itself is had owing to flow through in order to the electric current on the circuit of transmission system high voltage OVDD.Thus, will cause the received system high voltage OVDD of each image element circuit 100 difference to some extent.
Add because the influence of manufacturing process, in each image element circuit 100 in order to the threshold voltage of the thin film transistor (TFT) T2 that drives Organic Light Emitting Diode (OLED) OD (threshold voltage, Vth) probably all inequality.Therefore, react on the received system high voltage OVDD of each image element circuit 100 to some extent in difference and each image element circuit 100 in order under the threshold voltage of the thin film transistor (TFT) T2 that drives Organic Light Emitting Diode (OLED) the OD situation all inequality, even if will cause applying identical data-signal Vdata to each image element circuit 100, also can cause the electric current of Organic Light Emitting Diode (OLED) OD of each image element circuit 100 of flowing through different, thereby the brightness that makes each image element circuit 100 be presented also can be different, and this also is to influence the main cause that oled panel shows unevenness.
Summary of the invention
In view of the problem that prior art faced,, the object of the present invention is to provide the image element circuit and the driving method thereof of a kind of Organic Light Emitting Diode (OLED) display, show the problem of unevenness in order to improvement/solution oled panel effectively.
The present invention proposes a kind of image element circuit, and it comprises the first transistor, transistor seconds, the 3rd transistor, first electric capacity, second electric capacity, and luminescence component (OLED).Wherein, the grid of the first transistor is in order to receive first sweep signal, and first leakage of the first transistor or source electrode are then in order to receive data-signal.The grid of transistor seconds is in order to receive second sweep signal, and first leakage of transistor seconds or source electrode are then in order to receive reference signal.First end of first electric capacity electrically connects second of the first transistor and leaks or source electrode, and second end of first electric capacity then electrically connects second of transistor seconds and leaks or source electrode.The 3rd transistorized grid electrically connects second of the first transistor and leaks or source electrode, and the 3rd transistorized first leakage or source electrode are electrically connected to first voltage, and the 3rd transistorized second leakage or source electrode then electrically connect second of transistor seconds and leak or source electrode.First end of second electric capacity electrically connects the 3rd transistorized first and leaks or source electrode, and second end of second electric capacity then electrically connects the 3rd transistorized second and leaks or source electrode.First end of luminescence component electrically connects the 3rd transistorized second and leaks or source electrode, and second end of luminescence component then is electrically connected to second voltage.
In one embodiment of this invention, first end and second end of luminescence component are respectively anode and negative electrode, and first voltage and second voltage are respectively system high voltage and system low-voltage.With this understanding, first, second and the 3rd transistor are respectively the N transistor npn npn.
In another embodiment of the present invention, first end and second end of luminescence component are respectively negative electrode and anode, and first voltage and second voltage are respectively system low-voltage and system high voltage.With this understanding, first, second and the 3rd transistor are respectively the P transistor npn npn.
The present invention proposes a kind of display with image element circuit that the invention described above proposes in addition.
The present invention also proposes a kind of driving method that is suitable for driving the image element circuit that the invention described above proposes, and it comprises: during the replacement during the picture, the 3rd transistorized grid and second of resetting leaks or the voltage quasi position of source electrode; Between the storage life during the same frame, write down the 3rd transistorized threshold voltage; During writing during the same frame, write data-signal to luminescence component; And between the light emission period during the same frame, only react on data-signal and cause luminescence component luminous.
Based on above-mentioned, image element circuit proposed by the invention is the framework (just three thin film transistor (TFT)s add two electric capacity) that adopts 3T2C, and after its circuit aspect is subjected to the driving of corresponding sweep signal and data-signal, the brightness that can cause image element circuit to present is only relevant with data-signal, and irrelevant, thereby improved/solved the problem of oled panel demonstration unevenness effectively with the cross-pressure of the positive negative electrode of the system high voltage that transistorized threshold voltage, image element circuit received of driven for emitting lights assembly and luminescence component.
Description of drawings
Fig. 1 is the synoptic diagram of the image element circuit of traditional active matrix organic LED (AMOLED) display;
Fig. 2 A is the system block diagrams of Organic Light Emitting Diode (OLED) display of one embodiment of the invention;
Fig. 2 B is the drive waveforms figure of the image element circuit of Fig. 2 A;
Fig. 3 A to Fig. 3 D is the running synoptic diagram of the image element circuit of Fig. 2 A;
Fig. 4 A is the system block diagrams of Organic Light Emitting Diode (OLED) display of another embodiment of the present invention;
Fig. 4 B is the drive waveforms figure of the image element circuit of Fig. 4 A;
Fig. 5 A is the system block diagrams of Organic Light Emitting Diode (OLED) display of yet another embodiment of the invention;
Fig. 5 B is the drive waveforms figure of the image element circuit of Fig. 5 A.
[primary clustering symbol description]
100, Pix, Pix ': image element circuit
200,400,500: Organic Light Emitting Diode (OLED) display
210: time schedule controller
220: data driven unit
230,240,510: scanning driving device
250,250 ': display panel
260: the reference signal generation device
A, B: node
C, C1, C2: electric capacity
T1～T3, T1 '～T3 ': transistor
OD: Organic Light Emitting Diode/luminescence component
DL: data line
SL1, SL2: sweep trace
Vscan, Vscan1, Vscan2, Vscan1 ', Vscan2 ': sweep signal
Vdata: data-signal
Vsus: reference signal
VD, VD (N-1), VD (N): data voltage
VR: reference voltage
OVDD: system high voltage
OVSS: system low-voltage
P1: during the replacement
P2: between the storage life
P3: during writing
P4: between light emission period
Embodiment
Now will the example of described one exemplary embodiment be described in the accompanying drawings in detail with reference to one exemplary embodiment of the present invention.In addition, all possibility parts use assembly/member of same numeral to represent identical or similar portions in graphic and embodiment.
Fig. 2 A is the system block diagrams of Organic Light Emitting Diode (OLED) display of one embodiment of the invention.Please refer to Fig. 2 A, organic light emitting diode display 200 comprises time schedule controller (timing controller, T-con) 210, data driven unit (data driving device) 220, scanning driving device (scan driving device) 230 and 240, display panel (display panel) 250, and reference signal generation device (reference signal generating device) 260.
In the present embodiment, display panel 250 comprises at least one data line DL, at least two sweep trace SL1 and SL2, and at least one image element circuit Pix.Wherein, data line DL electrically connects data driven unit 220, is controlled by the data-signal Vdata that time schedule controller 210 is provided in order to receive data driven unit 220.Sweep trace SL1 electrically connects first scanning driving device 230, is controlled by the sweep signal Vscan1 that time schedule controller 210 is provided in order to receive scanning driving device 230.Sweep trace SL2 electrically connects scanning driving device 240, is controlled by the second sweep signal Vscan2 that time schedule controller 210 is provided in order to receive scanning driving device 240.
On the other hand, image element circuit Pix comprises transistor T 1～T3 (for example being thin film transistor (TFT)), capacitor C 1 and C2, and luminescence component OD.Wherein, transistor T 1～T3 is the N transistor npn npn, and luminescence component OD is Organic Light Emitting Diode (OLED).In the present embodiment, the grid of N transistor npn npn T1 (gate) electrically connects sweep trace SL1 to receive sweep signal Vscan1; The drain electrode (drain) of N transistor npn npn T1 then electrically connects data line DL to receive data-signal Vdata.The grid of N transistor npn npn T2 electrically connects sweep trace SL2 to receive sweep signal Vscan2; The drain electrode of N transistor npn npn T2 is then in order to receive the reference signal Vsus that reference signal generation device 260 is provided.
First end of capacitor C 1 electrically connects the source electrode of N transistor npn npn T1, and second end of capacitor C 1 then electrically connects the source electrode of N transistor npn npn T2.The grid of N transistor npn npn T3 electrically connects the source electrode of N transistor npn npn T1, and the drain electrode of N transistor npn npn T3 is electrically connected to system high voltage OVDD, and the source electrode of N transistor npn npn T3 then electrically connects the source electrode of N transistor npn npn T2.First end of capacitor C 2 electrically connects the drain electrode of N transistor npn npn T3, and second end of capacitor C 2 then electrically connects the source electrode of N transistor npn npn T3.The anode of luminescence component OD (anode) electrically connects the source electrode of N transistor npn npn T3, and the negative electrode of luminescence component OD (cathode) then is electrically connected to system low-voltage OVSS.
Based on above-mentioned, below will do one and encyclopaedize to have and know the knowledgeable's reference usually to field of the present invention at the running of image element circuit Pix.
Fig. 2 B is the drive waveforms figure of the image element circuit Pix of Fig. 2 A.Fig. 3 A to Fig. 3 D is the running synoptic diagram of the image element circuit Pix of Fig. 2 A.Please earlier with reference to Fig. 2 B, in the present embodiment, during OLED display 200 picture (frame period) by (reset period) P1 during resetting, (storing period) P2 between the storage life, write during between (writing period) P3 and light emission period (emissionperiod) P4 formed.
Then, please merge, in replacement period P 1, because sweep signal Vscan1 and Vscan2 are in the state that enables (enable), to such an extent as to N transistor npn npn T1 and T2 can conductings (turn on) with reference to Fig. 2 B and Fig. 3 A.At this moment, data driven unit 220 can provide the data-signal Vdata with reference voltage VR to image element circuit Pix, come image element circuit Pix is carried out precharge (pre-charge) with this, and the voltage quasi position of the grid of replacement N transistor npn npn T3.On the other hand, reference signal generation device 260 can provide reference signal Vsus to image element circuit Pix, with the voltage quasi position of the source electrode of this N transistor npn npn T3 that resets.Wherein, the voltage quasi position of reference voltage VR is greater than the voltage quasi position of reference signal Vsus.Thus, the voltage quasi position of node A (grid voltage of N transistor npn npn T3 just) equals the voltage quasi position of reference voltage VR; And the voltage quasi position of Node B (source voltage of N transistor npn npn T3 just) equals the voltage quasi position of reference signal Vsus.
And then, please merge with reference to Fig. 2 B and Fig. 3 B, P2 between the storage life is because sweep signal Vscan1 and Vscan2 are in the state that enables with forbidden energy (disable) respectively, to such an extent as to N transistor npn npn T1 can keep conducting, and N transistor npn npn T2 transfers to and closes (turn off).At this moment, because data driven unit 220 can continue to provide the data-signal Vdata with reference voltage VR to image element circuit Pix, to such an extent as to the voltage quasi position of node A still equals the voltage quasi position of reference voltage VR, and the voltage quasi position of Node B equals VR-Vth, thus the threshold voltage (Vth) of capacitor C 1 record N transistor npn npn T3.Wherein, VR is the voltage quasi position of reference voltage VR; And Vth is the threshold voltage of N transistor npn npn T3.
Afterwards, please merge with reference to Fig. 2 B and Fig. 3 C, write period P 3, because sweep signal Vscan1 and Vscan2 are in the state that enables with forbidden energy respectively, to such an extent as to N transistor npn npn T1 can keep conducting, and N transistor npn npn T2 can keep and closes.At this moment, because can transferring to, data driven unit 220 provide data-signal Vdata to image element circuit Pix (data-signal Vdata with the data voltage VD grid to N transistor npn npn T3 just is provided) with data voltage VD, to such an extent as to the voltage quasi position of node A is changed into the voltage quasi position of data voltage VD, and the voltage quasi position of Node B equals VR-Vth+a* (VD-VR).Wherein, a=C1/ (C1+C2); C1 is the capacitance of capacitor C 1; C2 is the capacitance of capacitor C 2; And VD is the voltage quasi position of data voltage VD.
At last, please merge with reference to Fig. 2 B and Fig. 3 D, P4 between light emission period is because sweep signal Vscan1 and Vscan2 are in the state of forbidden energy, to such an extent as to N transistor npn npn T1 and T2 can close.At this moment, the voltage quasi position of node A equals VD+Voled+OVSS-a* (VD-VR)+Vth-VR, and the voltage quasi position of Node B equals Voled+OVSS.Wherein, Voled is the cross-pressure of the positive negative electrode of luminescence component OD.Thus, the flow through electric current of luminescence component OD equals K*[(1-a) * (VD-VR)] 2.Wherein, K is the fabrication process parameters that is associated with N transistor npn npn T3, is generally constant.
Hence one can see that, P4 between light emission period, the size of current of luminescence component OD of flowing through only relevant (just luminescence component OD only react on data-signal Vdata and luminous) with data-signal Vdata with reference voltage VR and data voltage VD, and irrelevant with image element circuit Pix in order to the cross-pressure (Voled) of the positive negative electrode of threshold voltage (Vth), the system high voltage OVDD that is received and the luminescence component OD of the N transistor npn npn T3 of driven for emitting lights assembly OD.Therefore, the image element circuit Pix of present embodiment just can improve/solve the problem that oled panel 250 shows unevenness effectively.
The image element circuit Pix of the foregoing description realizes it with three N transistor npn npn T1～T3 and two capacitor C 1 with C2, but the present invention is not restricted to this.
Fig. 4 A is the system block diagrams of Organic Light Emitting Diode (OLED) display 400 of another embodiment of the present invention, and Fig. 4 B is the drive waveforms figure of the image element circuit Pix ' of Fig. 4 A.Please merge with reference to Fig. 4 A and Fig. 4 B, organic light emitting diode display 200 is that with 400 differences the structure of display panel 250 and 250 ' is different.In the present embodiment, image element circuit Pix ' in the display panel 250 ' and the image element circuit Pix in the display panel 250 present complementary structure.Clearer, image element circuit Pix ' realizes with C2 with three P transistor npn npn T1～T3 and two capacitor C 1.Thus, sweep signal Vscan1 ' that present embodiment only need be reversed Fig. 4 B respectively with sweep signal Vscan1 and the Vscan2 of Fig. 2 B and Vscan2 ' are with after driving image element circuit Pix ', can reach/similar techniques effect similar, so also no longer given unnecessary details at this to a last embodiment.
On the other hand, the foregoing description is that to provide sweep signal Vscan1 (or Vscan1 ') and Vscan2 (or Vscan2 ') respectively with two scanning driving devices 230 and 240 be that example describes with driving N transistor npn npn T1 and T2 (or P transistor npn npn T1 ' and T2 '), but the present invention is not restricted to this.
Fig. 5 A is the system block diagrams of Organic Light Emitting Diode (OLED) display of yet another embodiment of the invention, and Fig. 5 B is the drive waveforms figure of the image element circuit Pix of Fig. 5 A.Please merge with reference to Fig. 5 A and Fig. 5 B, organic light emitting diode display 200 and 500 differences are that organic light emitting diode display 500 only has a scanning driving device 510, and this scanning driving device 510 can utilize existing any shift register mechanism/means to produce sweep signal Vscan1 and Vscan2.Thus, the practising way of scanning driving device 510 can be easy to the practising way of scanning driving device 230 and 240, and that its cost of manufacture also can be relative is cheap.
In the present embodiment, the data-signal Vdata that sweep signal Vscan1 that is provided by scanning driving device 510 and Vscan2 and data driven unit 220 are provided drives the words of image element circuit Pix, then can reach similar to the aforementioned embodiment/similar techniques effect equally, so also no longer given unnecessary details at this.
Yet, must what deserves to be mentioned is at this, if adopt sweep signal Vscan1 shown in Fig. 5 B and Vscan2 and data-signal Vdata to drive the words of image element circuit Pix, the result of the type of drive of the then unique Fig. 2 of being different from B is: in replacement period P 1, the voltage quasi position of node A can equal to have the voltage quasi position of the data-signal Vdata of data voltage VD (N-1), but not the as above voltage quasi position of the reference voltage VR of an embodiment.In addition, at other period P 2～P4, each other voltage quasi position of node A and B is all as a same embodiment.In Fig. 5 B, label VD (N-1) is expressed as the data voltage of the last stroke count number of it is believed that Vdata; And label VD (N) is expressed as the data voltage of data-signal Vdata instantly.
In sum, image element circuit proposed by the invention (Pix/Pix ') be the framework (just the thin film transistor (TFT) of three N type/P types is added two electric capacity) that adopts 3T2C, and after its circuit aspect is subjected to the driving of corresponding sweep signal (Vscan1/Vscan1 ' and Vscan2/Vscan2 ') and data-signal (Vdata), the brightness that can cause image element circuit to present is only relevant with data-signal, and with the transistorized threshold voltage (Vth) of driven for emitting lights assembly (OLED), the cross-pressure (Voled) of the positive negative electrode of system high voltage that image element circuit received (OVDD) and luminescence component is irrelevant, thereby is improved/solve the problem that oled panel shows unevenness effectively.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when doing a little change and retouching, so protection scope of the present invention is when being as the criterion with the scope that claim was defined.
Claims (10)
1. an image element circuit is characterized in that, comprising:
One the first transistor, the grid of described the first transistor be in order to receiving one first sweep signal, and described the first transistor first leak or source electrode in order to receive a data-signal;
One transistor seconds, the grid of described transistor seconds be in order to receiving one second sweep signal, and described transistor seconds first leak or source electrode in order to receive a reference signal;
One first electric capacity, first end of described first electric capacity electrically connect second of described the first transistor and leak or source electrode, and second end of described first electric capacity electrically connects second leakage or the source electrode of described transistor seconds;
One the 3rd transistor, the described the 3rd transistorized grid electrically connects second of described the first transistor and leaks or source electrode, the described the 3rd transistorized first leakage or source electrode are electrically connected to one first voltage, and the described the 3rd transistorized second leakage or source electrode electrically connect second leakage or the source electrode of described transistor seconds;
One second electric capacity, first end of described second electric capacity electrically connect the described the 3rd transistorized first and leak or source electrode, and second end of described second electric capacity electrically connects the described the 3rd transistorized second leakage or the source electrode; And
One luminescence component, first end of described luminescence component electrically connect the described the 3rd transistorized second and leak or source electrode, and second end of described luminescence component is electrically connected to one second voltage.
2. image element circuit as claimed in claim 1 is characterized in that, first end of described luminescence component and second end are respectively an anode and a negative electrode, and described first voltage and described second voltage are respectively a system high voltage and a system low-voltage.
3. image element circuit as claimed in claim 2 is characterized in that, described the first transistor, described transistor seconds and described the 3rd transistor are respectively a N transistor npn npn.
4. image element circuit as claimed in claim 1 is characterized in that, first end of described luminescence component and second end are respectively a negative electrode and an anode, and described first voltage and described second voltage are respectively a system low-voltage and a system high voltage.
5. image element circuit as claimed in claim 4 is characterized in that, described the first transistor, described transistor seconds and described the 3rd transistor are respectively a P transistor npn npn.
6. a display is characterized in that, comprising:
One display panel, described display panel comprises:
At least one data line is in order to receive a data-signal;
At least one first sweep trace and one second sweep trace receive one first sweep signal and one second sweep signal respectively; And
At least one image element circuit, described image element circuit comprises:
One the first transistor, the grid of described the first transistor electrically connect described first sweep trace, and first leakage or the source electrode of described the first transistor electrically connect described data line;
One transistor seconds, the grid of described transistor seconds electrically connect described second sweep trace, and first leakage of described transistor seconds or source electrode are in order to receive a reference signal;
One first electric capacity, first end of described first electric capacity electrically connect second of described the first transistor and leak or source electrode, and second end of described first electric capacity electrically connects second leakage or the source electrode of described transistor seconds;
One the 3rd transistor, the described the 3rd transistorized grid electrically connects second of described the first transistor and leaks or source electrode, the described the 3rd transistorized first leakage or source electrode are electrically connected to one first voltage, and the described the 3rd transistorized second leakage or source electrode electrically connect second leakage or the source electrode of described transistor seconds;
One second electric capacity, first end of described second electric capacity electrically connect the described the 3rd transistorized first and leak or source electrode, and second end of described second electric capacity electrically connects the described the 3rd transistorized second leakage or the source electrode; And
One luminescence component, first end of described luminescence component electrically connect the described the 3rd transistorized second and leak or source electrode, and second end of described luminescence component is electrically connected to one second voltage.
7. display as claimed in claim 6 is characterized in that, described display also comprises:
One data driven unit electrically connects described data line, in order to described data-signal to be provided.
8. display as claimed in claim 6 is characterized in that, described display also comprises:
One first scanning driving device electrically connects described first sweep trace, in order to described first sweep signal to be provided; And
One second scanning driving device electrically connects described second sweep trace, in order to described second sweep signal to be provided.
9. display as claimed in claim 6 is characterized in that, described display also comprises:
The one scan drive unit electrically connects described first sweep trace and described second sweep trace, in order to described first sweep signal and described second sweep signal to be provided.
10. a driving method is characterized in that, is suitable for driving image element circuit as claimed in claim 1, and described driving method comprises:
During one during the picture reset, the voltage quasi position of reset the described the 3rd transistorized grid and second leakage or source electrode;
Between the storage life during the described picture, write down the described the 3rd transistorized threshold voltage;
During one during the described picture writes, provide described data-signal to the described the 3rd transistorized grid; And
Between the light emission period during the described picture, cause described luminescence component only to react on described data-signal and luminous.
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| CN2010101746406A CN101866619B (en) | 2010-05-06 | 2010-05-06 | Pixel circuit of organic light-emitting diode, display and driving method thereof |
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| CN2010101746406A CN101866619B (en) | 2010-05-06 | 2010-05-06 | Pixel circuit of organic light-emitting diode, display and driving method thereof |
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