CN102654972A - Active matrix organic light emitting diode (AMOLED) and drive circuit and method of AMOLED - Google Patents
Active matrix organic light emitting diode (AMOLED) and drive circuit and method of AMOLED Download PDFInfo
- Publication number
- CN102654972A CN102654972A CN2011101680352A CN201110168035A CN102654972A CN 102654972 A CN102654972 A CN 102654972A CN 2011101680352 A CN2011101680352 A CN 2011101680352A CN 201110168035 A CN201110168035 A CN 201110168035A CN 102654972 A CN102654972 A CN 102654972A
- Authority
- CN
- China
- Prior art keywords
- transistor
- organic light
- amoled
- voltage
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The invention discloses an active matrix organic light emitting diode (AMOLED) and a drive circuit and method of the AMOLED, relating to the technical field of organic light emitting display and aiming to improve the luminance uniformity of the AMOLED. The drive circuit of the AMOLED comprises a first transistor, a second transistor, capacitors, an organic light emitting diode and a voltage regulating module, wherein the voltage regulating module is connected among a first line scanning signal terminal, a second line scanning signal terminal, a high level signal terminal and a reference signal terminal, is connected with the capacitors and the first transistor, and is used for regulating a gate-source voltage of the first transistor connected with the capacitors so as to allow a drive circuit of the first transistor in a saturated state to be unrelated with a threshold voltage of the first transistor. The AMOLED is applicable to the organic light emitting display.
Description
Technical field
The present invention relates to the organic light emitting display technical field, relate in particular to a kind of active matrix organic light-emitting diode (AMOLED) panel and driving circuit and method.
Background technology
AMOLED (Active Matrix Organic Light Emitting Diode) is the active matrix organic light-emitting diode (AMOLED) panel.Than traditional transistor liquid crystal display (TFT-LCD) panel (TFT LCD; Thin Film Transistor Liquid Crystal Display); AMOLED has that reaction velocity is faster, contrast is higher and advantage such as the visual angle is wider; Therefore be called as display technique of future generation, received most of display technique developer's favor at present.
The active matrix organic light-emitting diode (AMOLED) panel is luminous by driving circuit drives.Traditional 2T1C driving circuit is made up of two transistors (TFT) and an electric capacity (C), and this traditional 2T1C driving circuit is as shown in Figure 1.Among Fig. 1, transistor M1 is that switching tube, transistor M2 are driving tube, and C is a MM CAP.Wherein, transistor M1 is by horizontal scanning line signal Vscan control, to be used for the input of control data voltage Vdata.It is luminous that transistor M2 is used to control Organic Light Emitting Diode (OLED).The grid that MM CAP C is used to transistor M2 provides keeps voltage.
As shown in Figure 2, be the control timing figure of 2T1C driving circuit shown in Figure 1.The course of work of this 2T1C driving circuit is: in Fig. 2, choose T1, two stages of T2, the T1 stage is the display data voltage write phase, and the T2 stage is for showing the maintenance stage.In the T1 stage; Horizontal scanning line signal Vscan is a high level; Transistor M1 conducting, so voltage data signal Vdata is MM CAP C charging, data voltage Vdata acts on the grid of transistor M2 simultaneously; Transistor M2 is operated under the state of saturation, and it is luminous to drive Organic Light Emitting Diode OLED.In the T2 stage, horizontal scanning line signal Vscan is a low level, and transistor M1 closes; Data voltage Vdata can not arrive the grid of transistor M2; This moment, MM CAP C was that the grid of transistor M2 provides and keeps voltage, make transistor M2 still be in state of saturation, thereby it is luminous that OLED is continued.After this 2T1C driving circuit repetition T2 stage arrived up to the next T1 stage.
From the above, the OLED among the AMOLED can luminously be that the drive current that is produced when being operated in state of saturation by driving tube M2 drives, particularly drive current (promptly flowing through the circuit of OLED) I=K (V
Gs-V
Th)
2, V wherein
GsBe the grid of driving tube M2 and the voltage difference between the source electrode, V
ThBe the threshold voltage of driving tube M2, K is the constant relevant with technology with driving tube M2 self structure.Because transistorized threshold voltage V in existing low temperature polycrystalline silicon manufacturing process
ThHomogeneity is relatively poor, and in use also can drift about, and when to driving tube M2 input identical data voltage Vdata, the threshold voltage of driving tube M2 is different to produce different drive currents, thereby causes the homogeneity of AMOLED brightness relatively poor like this.
Summary of the invention
Embodiments of the invention provide a kind of active matrix organic light-emitting diode (AMOLED) panel and driving circuit and method, to improve the homogeneity of AMOLED brightness.
For achieving the above object, embodiments of the invention adopt following technical scheme:
A kind of active matrix organic light-emitting dipolar body panel driving circuit comprises:
The first transistor, its grid is connected with electric capacity, source electrode is connected with the low level signal end, drain electrode is connected with voltage regulating module;
Transistor seconds, its grid is connected with the second line scan signals end, source electrode is connected with electric capacity, drain electrode is connected with the data-signal end;
Electric capacity, it is connected between the source electrode of grid and transistor seconds of the first transistor;
Organic Light Emitting Diode, it is connected between high level voltage end and the voltage regulating module, or is connected between the source electrode of low level voltage end and the first transistor;
Voltage regulating module; It is connected between the first line scan signals end, the second line scan signals end, high level signal end and the reference signal end; And be connected with the first transistor with electric capacity; Be used to regulate the gate source voltage of the first transistor that is connected with electric capacity, so that drive current and its threshold voltage of the first transistor under state of saturation is irrelevant.
A kind of active matrix organic light-emitting diode (AMOLED) panel comprises a plurality of sub-pixs unit that is arranged, and corresponding each said sub-pix unit is provided with an aforesaid driving circuit.
A kind of active matrix organic light-emitting diode (AMOLED) panel driving method; Utilize aforesaid active matrix organic light-emitting dipolar body panel driving circuit to drive said active matrix organic light-emitting diode (AMOLED) panel, so that drive current and its threshold voltage of the first transistor in the said driving circuit under state of saturation is irrelevant.
The active matrix organic light-emitting diode (AMOLED) panel that the embodiment of the invention provides and driving circuit and method, driving tube is that drive current and its threshold voltage of the first transistor under state of saturation is irrelevant in the said driving circuit owing to can make, threshold voltage V
ThCan the electric current of the Organic Light Emitting Diode of flowing through not exerted an influence, thereby guaranteed the consistance of drive current better, make the homogeneity of AMOLED brightness better.
Description of drawings
Fig. 1 is the synoptic diagram of 2T1C driving circuit traditional in the prior art;
Fig. 2 is the control timing figure of 2T1C driving circuit shown in Figure 1;
Fig. 3 is the synoptic diagram of embodiment of the invention AMOLED driving circuit;
Fig. 4 is the synoptic diagram of a specific embodiment of AMOLED driving circuit;
Fig. 5 is the control timing figure of AMOLED driving circuit shown in Figure 4;
Fig. 6 is the work synoptic diagram in AMOLED driving circuit t1 stage shown in Figure 4;
Fig. 7 is the work synoptic diagram in AMOLED driving circuit t2 stage shown in Figure 4;
Fig. 8 is the work synoptic diagram in AMOLED driving circuit t3 stage shown in Figure 4;
Fig. 9 is the work synoptic diagram in AMOLED driving circuit t4 stage shown in Figure 4;
Figure 10 is the synoptic diagram of another specific embodiment of AMOLED driving circuit.
Embodiment
Below in conjunction with accompanying drawing embodiment of the invention active matrix organic light-emitting diode (AMOLED) panel (to call AMOLED in the following text) and driving circuit thereof and method are described in detail.
As shown in Figure 3, be the synoptic diagram of AMOLED driving circuit of the present invention.The AMOLED driving circuit comprises two transistors, electric capacity, Organic Light Emitting Diode (below be called OLED), a voltage regulating module and corresponding input/output terminal in the present embodiment.Corresponding each AMOLED driving circuit, this corresponding input/output terminal comprises two line scan signals ends (the first line scan signals end S1 and the second line scan signals end S2), a data-signal end Vdata, a reference signal end Vref, a high level signal end Vdd and a low level signal end Vss.Particularly, the AMOLED driving circuit comprises:
The first transistor T1, its grid is connected with capacitor C, source electrode is connected with low level signal end Vss, drain electrode is connected with voltage regulating module 1, and its effect is as driving tube, is the luminous drive current that provides of driving OLED when it is operated in state of saturation following time.Transistor seconds T2; Its grid is connected with the second line scan signals end S2, source electrode is connected with capacitor C, drain electrode is connected with data-signal end Vdata; Its effect is as switching tube, is used for the input of control data signal end Vdata under the control of the second line scan signals end S2.Capacitor C, it is connected between the source electrode of grid and transistor seconds T2 of the first transistor T1, and the grid that is used to the first transistor T1 provides keeps voltage.Organic Light Emitting Diode OLED; It is connected (referring to Fig. 3 and Fig. 4) between high level voltage end Vdd and the voltage regulating module 1; Or be connected between the source electrode of low level voltage end and the first transistor (referring to Figure 10), be used under the drive current effect of the first transistor T1 luminous, to light AMOLED.Voltage regulating module 1; It is connected between the first line scan signals end S1, the second line scan signals end S2, high level signal end Vdd and the reference signal end Vref; And be connected with the first transistor T1 with capacitor C, be used to regulate the gate source voltage V of the first transistor T1 that is connected with capacitor C
Gs, so that drive current I and its threshold voltage V of the first transistor T1 under state of saturation
ThIrrelevant.
The AMOLED driving circuit that the embodiment of the invention provides is owing to can regulate the gate source voltage V of the first transistor T1 that is connected with capacitor C through said voltage regulating module 1
Gs, make drive current I and its threshold voltage V of driving tube in the said driving circuit (being the first transistor T1) under state of saturation
ThIrrelevant, the threshold voltage V of the first transistor T1
ThCan the electric current of the Organic Light Emitting Diode OLED that flow through not exerted an influence, thereby guaranteed the consistance of drive current I better, make the homogeneity of AMOLED brightness better.
As shown in Figure 4, be the synoptic diagram of a specific embodiment of AMOLED driving circuit of the present invention.Can know that by Fig. 4 said AMOLED driving circuit comprises six transistors, a MM CAP, a light-emitting component and corresponding input/output terminal.Wherein these six transistors are respectively: the first transistor T1, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4, the 5th transistor T 5 and the 6th transistor T 6.MM CAP is a capacitor C.Light-emitting component is Organic Light Emitting Diode OLED.Corresponding input/output terminal comprises: two line scan signals ends (the first line scan signals end S 1 and the second line scan signals end S2), a data-signal end Vdata, a reference signal end Vref, a high level signal end Vdd and a low level signal end Vss.
The concrete structure of AMOLED driving circuit comprises in the present embodiment: the first transistor T1, and its grid is connected with capacitor C, source electrode is connected with low level signal end Vss, draining is connected with the source electrode of the 4th transistor T 4; Transistor seconds T2, its grid is connected with the second line scan signals end S2, source electrode is connected with capacitor C, drain electrode is connected with data-signal end Vdata; The 3rd transistor T 3, its grid is connected with the second line scan signals end S2, source electrode is connected with capacitor C, drain electrode is connected with the drain electrode of the first transistor T1; The 4th transistor T 4; Its grid is connected with the first line scan signals end S1, source electrode is connected with the drain electrode of the first transistor T1, drain electrode is connected with high level signal end Vdd; Particularly under state shown in Figure 4, its drain electrode is connected with high level signal end Vdd through OLED; The 5th transistor T 5, its grid are connected with the second line scan signals end S2, source electrode is connected with reference signal end Vref, drain electrode is connected with capacitor C.The 6th transistor T 6, its grid are connected with the second line scan signals end S2, source electrode is connected with the end of Organic Light Emitting Diode OLED, drain electrode is connected with the other end of Organic Light Emitting Diode OLED.Capacitor C, it is connected between the source electrode of grid and transistor seconds T2 of the first transistor T1.Organic Light Emitting Diode OLED, it is connected between the drain electrode of high level voltage end Vdd and the first transistor T1, and is specifically as shown in Figure 4, and Organic Light Emitting Diode OLED is connected between the drain electrode of high level voltage end Vdd and the 4th transistor T 4.
Wherein, the 3rd transistor T 3, the 4th transistor T 4, the 5th transistor T 5 have been formed the voltage regulating module 1 in the present embodiment.Voltage regulating module 1 is used to regulate the gate source voltage V of the first transistor T1 that is connected with capacitor C
Gs, so that drive current I and its threshold voltage V of the first transistor T1 under state of saturation
ThIrrelevant, the threshold voltage V of the first transistor T1
ThCan the electric current of the Organic Light Emitting Diode OLED that flow through not exerted an influence, thereby guaranteed the consistance of drive current I better, make the homogeneity of AMOLED brightness better.
The source electrode of the 6th transistor T 6 is connected the two ends of OLED with draining; Be used for when the first transistor T1 produces incorrect drive current the OLED short circuit; In order to avoid OLED is luminous under incorrect drive current effect, thereby produce incorrect luminous intensity causing the demonstration mistake, and when the first transistor T1 produces correct drive current, OLED is communicated with the first transistor T1; Make OLED luminous under correct drive current effect, guarantee to show normal.
Between the source electrode of capacitor C and transistor seconds T2, be provided with first node P, and first node P is connected with the drain electrode of the 5th transistor T 5 also; Between the grid of the first transistor T1 and capacitor C, be provided with Section Point Q, and Section Point Q is connected with the source electrode of the 3rd transistor T 3 also; Between the source electrode of the first transistor T1 and low level signal end, be provided with the 3rd node N.First node P, Section Point Q and the 3rd node N are set make things convenient for the back to describe and calculate the circuit parameter of AMOLED driving circuit, like each voltages at nodes etc.
With regard to transistorized type, the first transistor T1 in the present embodiment, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 6th transistor T 6 are the n transistor npn npn, and the 5th transistor T 5 is the p transistor npn npn.Wherein, the n transistor npn npn can be in conducting under the high level signal, and under low level signal, ends.The P transistor npn npn can be in conducting under the low level signal, and under low level signal, ends, and in AMOLED driving circuit shown in Figure 4, the diagram of p type the 5th transistor T 5 is different with the diagram of other n transistor npn npns, to show difference.But be not limited thereto, can make first to the 6th transistor T 1-T6 be the n transistor npn npn in other embodiments of the invention, and between the grid of the second line scan signals end S2 and the 5th transistor T 5, be connected with phase inverter.The effect of this phase inverter is to be transferred to the 5th transistor T 5 after the level signal anti-phase with second line scan signals end S2 transmission; When the level signal of for example sending as the second line scan signals end S2 is low level; Behind this phase inverter, become high level and be transferred to the 5th transistor T 5; And when the level signal of second line scan signals end S2 transmission is high level, behind this phase inverter, becomes low level and be transferred to the 5th transistor T 5.Wherein said phase inverter can adopt phase inverter commonly used in the prior art, and this phase inverter can be made in the active matrix organic light-emitting diode (AMOLED) panel with AMOLED together.
With regard to regard to role in the AMOLED driving circuit; Transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4, the 5th transistor T 5 and the 6th transistor T 6 are switching tube; Be used for breaking off or the closed circuit connection; For this reason at Fig. 6 to the AMOLED driving circuit shown in Figure 9, second to the 6th transistor T 2-T6 is reduced to the form of switch.The first transistor T1 is a driving tube, and it is operated in state of saturation following time and is used to produce the luminous drive current of driving OLED.
As shown in Figure 5, be the control timing figure of AMOLED driving circuit in the present embodiment, choose t1～t4 four-stage wherein.In the following description with 1 expression high level signal, 0 expression low level signal.And in Fig. 6 to Fig. 9, second to the 6th transistor T 2-T6 is reduced to the form of switch.Below in conjunction with Fig. 5, and Fig. 6 to Fig. 9 describes the course of work of AMOLED driving circuit.
In the t1 stage, S 1=1, S2=1.
The t1 stage is Pre-Charge stage (pre-charging stage).As shown in Figure 6, at t1 in the stage, because S1 is a high level, therefore the 4th transistor T 4 conductings; Because S2 is high level, so transistor seconds T2, the 3rd transistor T 3 and 6 conductings of the 6th transistor T, the 5th transistor T 5 end.At this moment, data-signal end Vdata imports data voltage through transistor seconds T2 to capacitor C; The high level signal of high level signal end Vdd arrives Section Point Q, the first transistor T1 conducting under high level signal via the 6th transistor T 6 and the 4th transistor T 4.Because this moment, the grid of the first transistor T1 was connected by the 3rd transistor T 3 with drain electrode, so the grid voltage of the first transistor T1 is identical with drain voltage, i.e. its gate source voltage V
GsWith drain-source voltage V
DsEquate, can satisfy V
Ds>=V
Gs-V
Th, so the first transistor T1 is operated in state of saturation, the drive current I=K (V that the first transistor T1 produces under this state of saturation
Gs-V
Th)
2=K (V
Qn-V
Th)
2=K (Vdd-V
Th)
2, V
GsBe the grid of the first transistor T1 and the voltage difference between the source electrode, V
ThBe the threshold voltage of the first transistor T1, K is and the relevant constant of the first transistor T1 self.The voltage V of first node P wherein
p=V
DataThe voltage V of (data voltage), Section Point Q
qThe voltage V of=Vdd, the 3rd node N
n=Vss.Because the drive current I of this moment is the predefined correct drive current I of OLED, therefore for avoiding OLED to produce incorrect luminous intensity, make 6 conductings of the 6th transistor T with the OLED short circuit in the stage at t1, avoid OLED luminous.
At t2 stage, S1=0, S2=1.
The t2 stage is a discharge regime.As shown in Figure 7, in the stage, because S1 is a low level, therefore the 4th transistor T 4 ends at t2; Because S2 is high level, so transistor seconds T2, the 3rd transistor T 3 and 6 conductings of the 6th transistor T, the 5th transistor T 5 end.At this moment; Because 3 conductings of the 3rd transistor T and the 4th transistor T 4 end; Therefore the grid of the first transistor T1 is with drain electrode links together and its drain electrode and 4 disconnections of the 4th transistor T; The first transistor T1 forms diode; Capacitor C, the first transistor T1 and low level signal end Vss form discharge loop (shown in the arrow among Fig. 7), and the electric charge with on the contiguous pole plate of Section Point Q of capacitor C flows to low level signal end Vss (can be ground connection) to discharge via the first transistor T1, and this discharge process lasts till that the voltage of Section Point Q drops to the threshold voltage V of the first transistor T1
ThTill (at this time, the first transistor T1 is in critical conduction mode, if continue discharge, then the first transistor T1 will end, and discharge loop will break off, thereby discharge process is finished), the voltage V at capacitor C two ends at this moment
c=V
p-V
q=V
Data-V
Th-Vss.Wherein, the voltage V of first node P
p=V
DataThe voltage V of (data voltage), Section Point Q
q=V
ThThe voltage V of+Vss, the 3rd node N
n=Vss.T2 in the stage 6 conductings of the 6th transistor T avoid OLED luminous the OLED short circuit.
At t3 stage, S1=0, S2=0.
The t3 stage is the pressure regulation stage.As shown in Figure 8, in the stage, because S1 is a low level, therefore the 4th transistor T 4 ends at t3; Because S2 is a low level, so transistor seconds T2, the 3rd transistor T 3 and the 6th transistor T 6 end, 5 conductings of the 5th transistor T.At this moment, because 5 conductings of the 5th transistor T, reference signal end Vref is connected to capacitor C through first node P, so the voltage of the first node P of capacitor C is by V
DataSport V
Ref(reference voltage).And because the 3rd transistor T 3 and the 4th transistor T 4 all end, and the first transistor T1 is in critical conditions, not conducting, so the Section Point Q of capacitor C is in vacant state.When the voltage of its first node P was undergone mutation, the capacitor C that is in vacant state can keep the voltage at its two ends constant, so the voltage of Section Point Q is also undergone mutation.That is the voltage V of Section Point Q,
q=V
Th+ Vss+ (V
Ref-V
Data), this moment, the voltage at capacitor C two ends was V
c=V
p-V
q=V
Ref-(V
Th+ Vss+ (V
Ref-V
Data))=V
Data-Vss-V
Th, remain unchanged.Wherein, the voltage V of first node P
p=V
RefThe voltage V of (reference voltage), Section Point Q
q=V
Th+ Vss+ (V
Ref-V
Data), the voltage V of the 3rd node N
n=Vss.
At t4 stage, S1=1, S2=0.
The t4 stage is the driving stage.As shown in Figure 9, at t4 in the stage, because S1 is a high level, therefore the 4th transistor T 4 conductings; Because S2 is a low level, so transistor seconds T2, the 3rd transistor T 3 and the 6th transistor T 6 end, 5 conductings of the 5th transistor T.At this moment, because the voltage of Section Point Q rises to V
Th+ Vss+ (V
Ref-V
Data); Therefore the first transistor T1 conducting and being operated under the state of saturation; This moment is because the 4th also conducting of transistor T 4, so high level signal end Vdd, the 4th transistor T 4, the first transistor T1 and low level signal end Vss form and drive the loop, and the drive current in this driving loop is I=K (V
Gs-V
Th)
2=K (V
Qn-V
Th)
2=(V
Th+ Vss+ (V
Ref-V
Data)-Vss-V
Th)
2=K (V
Ref-V
Data)
2Hence one can see that, the drive current that the first transistor T1 produces under state of saturation and its threshold voltage V
ThIrrelevant, so OLED can be luminous under stable drive current, thus guaranteed the consistance of drive current I better.
After this when the t1 stage arrived next time, this AMOLED driving circuit repeated t4 stage.Can know by top description, at t4 in the stage, the threshold voltage V of drive current I that driving OLED is luminous and driving tube (being the first transistor T1)
ThIrrelevant, so threshold voltage V
ThCan not give birth to influence, thereby guarantee the consistance of drive current better, make the homogeneity of AMOLED brightness better the Organic Light Emitting Diode OLED that flows through.
Shown in figure 10 in addition, be another specific embodiment of AMOLED driving circuit of the present invention.AMOLED driving circuit in the present embodiment and embodiment illustrated in fig. 4 in the AMOLED driving circuit basic identical, different is the link position of OLED.In the present embodiment, OLED is connected between the source electrode and low level signal end Vss of the first transistor T1.For AMOLED driving circuit shown in Figure 10, its control timing is identical with control timing shown in Figure 5, and its course of work with above the described course of work identical, no longer detail here.Need to prove; Embodiment shown in Figure 10 also has some nuances with the different net results that cause structurally embodiment illustrated in fig. 4; In the embodiment shown in fig. 10; Because OLED is connected between the source electrode and low level signal end Vss of the first transistor T1, therefore can produce voltage at the two ends of course of work OLED
V Oled_in , wherein
V Oled_in Be the cross-pressure of OLED when luminous.At this moment, because the influence of this cross-pressure, make V
q=Vss+V
Th+ (V
Ref-V
Data); V
n=Vss+V
Oled_inV
Gs=V
Qn=(V
Ref-V
Data)+V
Th-V
Oled_inTherefore final I=k (V
Ref-V
Data-V
Oled_in)
2Like this, in the net result of drive current I, introduced V
Oled_in, V
Oled_inAt V
DataSmall difference is arranged when having different gray levels voltage, and this has brought instability to circuit working, therefore compares embodiment shown in Figure 4, and this embodiment shown in Figure 10 is slightly not enough.
Need to prove that for above-mentioned Fig. 4 and AMOLED driving circuit embodiment shown in Figure 10, in actual use, technique scheme is not only applicable to polysilicon transistors, other transistor also is suitable for.
In addition; The embodiment of the invention also provides a kind of active matrix organic light-emitting diode (AMOLED) panel; Said active matrix organic light-emitting diode (AMOLED) panel comprises a plurality of sub-pixs unit that is arranged, and corresponding each said sub-pix unit is provided with an aforesaid driving circuit.Said driving circuit can be driving circuit as shown in Figure 3, for example specifically can be AMOLED driving circuit as shown in Figure 4 or AMOLED driving circuit shown in figure 10.
For example, with reference to shown in Figure 3, the AMOLED driving circuit in the active matrix organic light-emitting diode (AMOLED) panel of the present invention comprises two transistors, an electric capacity, an Organic Light Emitting Diode, a voltage regulating module and corresponding input/output terminal.Corresponding each AMOLED, this corresponding input/output terminal comprises two line scan signals ends (the first line scan signals end S1 and the second line scan signals end S2), a data-signal end Vdata, a reference signal end Vref, a high level signal end Vdd and a low level signal end Vss.Particularly, the AMOLED driving circuit comprises:
The first transistor T1, its grid is connected with capacitor C, source electrode is connected with low level signal end Vss, drain electrode is connected with voltage regulating module 1, and its effect is as driving tube, is the luminous drive current that provides of driving OLED when it is operated in state of saturation following time.Transistor seconds T2; Its grid is connected with the second line scan signals end S2, source electrode is connected with capacitor C, drain electrode is connected with data-signal end Vdata; Its effect is as switching tube, is used for the input of control data signal end Vdata under the control of the second line scan signals end S2.Capacitor C, it is connected between the source electrode of grid and transistor seconds T2 of the first transistor T1, and the grid that is used to the first transistor T1 provides keeps voltage.Organic Light Emitting Diode OLED; It is connected between the drain electrode of high level voltage end Vdd and the first transistor T1 (referring to Fig. 4); Or be connected between the source electrode of low level voltage end and the first transistor (referring to Figure 10); Be used under the drive current effect of the first transistor T1 luminous, to light AMOLED.Voltage regulating module 1; It is connected between the first line scan signals end S1, the second line scan signals end S2, high level signal end Vdd and the reference signal end Vref; And be connected with the first transistor T1 with capacitor C, be used to regulate the gate source voltage V of the first transistor T1 that is connected with capacitor C
Gs, so that drive current I and its threshold voltage V of the first transistor T1 under state of saturation
ThIrrelevant.
The active matrix organic light-emitting diode (AMOLED) panel that the embodiment of the invention provides is owing to can regulate the gate source voltage V of the first transistor T1 that is connected with capacitor C through said voltage regulating module 1
Gs, make drive current I and its threshold voltage V of driving tube in the said driving circuit (being the first transistor T1) under state of saturation
ThIrrelevant, the threshold voltage V of the first transistor T1
ThCan the electric current of the Organic Light Emitting Diode OLED that flow through not exerted an influence, thereby guaranteed the consistance of drive current I better, make the homogeneity of AMOLED brightness better.
In addition, the present invention also provides the embodiment of an AMOLED driving method.In the present embodiment; Utilize said active matrix organic light-emitting dipolar body panel driving circuit to drive said active matrix organic light-emitting diode (AMOLED) panel, so that drive current and its threshold voltage of the first transistor in the said driving circuit under state of saturation is irrelevant.Wherein, said active matrix organic light-emitting dipolar body panel driving circuit can comprise as above Fig. 3, Fig. 4 or driving circuit shown in Figure 10, but is not limited thereto, and also can comprise the driving circuit of other type.
The AMOLED driving method that the embodiment of the invention provides, driving tube is that drive current and its threshold voltage of the first transistor under state of saturation is irrelevant in the said driving circuit owing to can make, threshold voltage V
ThCan the electric current of the Organic Light Emitting Diode of flowing through not exerted an influence, thereby guaranteed the consistance of drive current better, make the homogeneity of AMOLED brightness better.
In the present embodiment; For making drive current and its threshold voltage of the first transistor pipe under state of saturation in the said driving circuit irrelevant; Can in said driving circuit, increase voltage regulating module; Said voltage regulating module is regulated the gate source voltage of said the first transistor, so that drive current and its threshold voltage of said the first transistor under state of saturation is irrelevant.Wherein said the first transistor is the transistor that drive current is provided for Organic Light Emitting Diode, and said threshold voltage refers to this transistorized threshold voltage.Said gate source voltage refers to the grid voltage V of driving tube
gWith source voltage V
sBetween difference V
GsCan regulate V through voltage regulating module
GsSize, make V
GsThe composition component in comprise V
ThThereby, make V
ThAt I=K (V
Gs-V
Th)
2In offset, finally make drive current I and threshold voltage V
ThIrrelevant.
For the driving tube in the driving circuit is operated under the state of saturation, can construct said driving circuit so that the difference of the gate source voltage of driving tube and its threshold voltage is less than or equal to its drain-source voltage, promptly satisfy V
Ds>=V
Gs-V
ThWhen driving tube is operated in state of saturation following time, the drive current I of driving tube only with its gate source voltage V
GsRelevant, promptly satisfy I=K (V
Gs-V
Th)
2, this moment can be through voltage regulating module only to gate source voltage V
GsRegulate, the adjusting parameter is less, so adjustment process is comparatively easy.
A plurality of embodiment of active matrix organic light-emitting diode (AMOLED) panel and driving circuit and method more than are provided, reference each other between these embodiment.
The above; Be merely embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technician who is familiar with the present technique field is in the technical scope that the present invention discloses; Can expect easily changing or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of said claim.
Claims (9)
1. an active matrix organic light-emitting dipolar body panel driving circuit is characterized in that, comprising:
The first transistor, its grid is connected with electric capacity, source electrode is connected with the low level signal end, drain electrode is connected with voltage regulating module;
Transistor seconds, its grid is connected with the second line scan signals end, source electrode is connected with electric capacity, drain electrode is connected with the data-signal end;
Electric capacity, it is connected between the source electrode of grid and transistor seconds of the first transistor;
Organic Light Emitting Diode, it is connected between high level voltage end and the voltage regulating module, or is connected between the source electrode of low level voltage end and the first transistor;
Voltage regulating module; It is connected between the first line scan signals end, the second line scan signals end, high level signal end and the reference signal end; And be connected with the first transistor with electric capacity; Be used to regulate the gate source voltage of the first transistor that is connected with electric capacity, so that drive current and its threshold voltage of the first transistor under state of saturation is irrelevant.
2. active matrix organic light-emitting dipolar body panel driving circuit according to claim 1 is characterized in that, said voltage regulating module comprises:
The 3rd transistor, its grid is connected with the second line scan signals end, source capacitance connection, drain electrode are connected with the drain electrode of the first transistor;
The 4th transistor, its grid are connected with the first line scan signals end, source electrode is connected with the drain electrode of the first transistor, drain electrode is connected with the high level signal end;
The 5th transistor, its grid are connected with the second line scan signals end, source electrode is connected with the reference signal end, drain electrode is connected with electric capacity.
3. active matrix organic light-emitting dipolar body panel driving circuit according to claim 2; It is characterized in that; Organic Light Emitting Diode is connected between the drain electrode of high level voltage end and the first transistor and is specially, and Organic Light Emitting Diode is connected between high level voltage end and the 4th transistor drain.
4. according to claim 2 or 3 described active matrix organic light-emitting dipolar body panel driving circuits; It is characterized in that; Also comprise the 6th transistor, its grid is connected with the second line scan signals end, source electrode is connected with an end of Organic Light Emitting Diode, drain electrode is connected with the other end of Organic Light Emitting Diode.
5. active matrix organic light-emitting dipolar body panel driving circuit according to claim 4 is characterized in that, first to fourth transistor and the 6th transistor are the n transistor npn npn, and the 5th transistor is the p transistor npn npn.
6. active matrix organic light-emitting dipolar body panel driving circuit according to claim 4 is characterized in that, first to the 6th transistor is the n transistor npn npn, and between the second line scan signals end and the 5th transistorized grid, is connected with phase inverter.
7. an active matrix organic light-emitting diode (AMOLED) panel is characterized in that, comprises a plurality of sub-pixs unit that is arranged, and corresponding each said sub-pix unit is provided with one like each described driving circuit among the claim 1-6.
8. active matrix organic light-emitting diode (AMOLED) panel driving method; It is characterized in that; Each described active matrix organic light-emitting dipolar body panel driving circuit drives said active matrix organic light-emitting diode (AMOLED) panel among utilization such as the claim 1-6, so that drive current and its threshold voltage of the first transistor in the said driving circuit under state of saturation is irrelevant.
9. active matrix organic light-emitting diode (AMOLED) panel driving method according to claim 8 is characterized in that, regulates the gate source voltage of said the first transistor, so that drive current and its threshold voltage of said the first transistor under state of saturation is irrelevant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110168035.2A CN102654972B (en) | 2011-06-21 | 2011-06-21 | Active matrix organic light-emitting diode (AMOLED) panel and driving circuit thereof and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110168035.2A CN102654972B (en) | 2011-06-21 | 2011-06-21 | Active matrix organic light-emitting diode (AMOLED) panel and driving circuit thereof and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102654972A true CN102654972A (en) | 2012-09-05 |
| CN102654972B CN102654972B (en) | 2015-08-12 |
Family
ID=46730593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110168035.2A Active CN102654972B (en) | 2011-06-21 | 2011-06-21 | Active matrix organic light-emitting diode (AMOLED) panel and driving circuit thereof and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102654972B (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021338A (en) * | 2012-12-24 | 2013-04-03 | 北京京东方光电科技有限公司 | Pixel circuit, method for driving same and display device |
| CN103714780A (en) * | 2013-12-24 | 2014-04-09 | 京东方科技集团股份有限公司 | Grid driving circuit, grid driving method, array substrate row driving circuit and display device |
| CN104157234A (en) * | 2014-01-17 | 2014-11-19 | 北京京东方光电科技有限公司 | Circuit and method for driving pixel unit, and display device |
| CN104575369A (en) * | 2013-10-21 | 2015-04-29 | 上海和辉光电有限公司 | Pixel drive circuit and display device |
| CN104616621A (en) * | 2015-02-05 | 2015-05-13 | 京东方科技集团股份有限公司 | Pixel circuit, and drive method and display device thereof |
| WO2015188470A1 (en) * | 2014-06-09 | 2015-12-17 | 京东方科技集团股份有限公司 | Pixel drive circuit, and drive method and display device thereof |
| CN105609055A (en) * | 2016-03-25 | 2016-05-25 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof and display device |
| US9514683B2 (en) | 2013-12-26 | 2016-12-06 | Boe Technology Group Co., Ltd. | Gate driving circuit, gate driving method, gate on array (GOA) circuit and display device |
| US9620061B2 (en) | 2013-12-30 | 2017-04-11 | Boe Technology Group Co., Ltd. | Gate driver circuit, gate driving method, gate-on-array circuit, display device, and electronic product |
| CN107146579A (en) * | 2017-07-06 | 2017-09-08 | 深圳市华星光电半导体显示技术有限公司 | A kind of AMOLED pixel-driving circuits and image element driving method |
| WO2018120701A1 (en) * | 2016-12-27 | 2018-07-05 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, display panel, and display |
| CN108877684A (en) * | 2018-08-31 | 2018-11-23 | 合肥鑫晟光电科技有限公司 | Pixel circuit and its driving method, array substrate, display panel, display device |
| CN109509431A (en) * | 2017-09-14 | 2019-03-22 | 京东方科技集团股份有限公司 | Pixel circuit and its driving method, display device |
| CN110060630A (en) * | 2019-05-06 | 2019-07-26 | 深圳市华星光电半导体显示技术有限公司 | Pixel-driving circuit and display panel |
| CN110782842A (en) * | 2019-11-25 | 2020-02-11 | 南京中电熊猫平板显示科技有限公司 | Self-luminous display device and in-pixel compensation circuit |
| CN113571009A (en) * | 2021-07-22 | 2021-10-29 | 深圳市华星光电半导体显示技术有限公司 | Light emitting device driving circuit, backlight module and display panel |
| CN115440161A (en) * | 2022-11-09 | 2022-12-06 | 惠科股份有限公司 | Pixel driving circuit and display panel |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1684558A (en) * | 2004-04-12 | 2005-10-19 | 三洋电机株式会社 | Organic electroluminescence pixel circuit |
| CN101022124A (en) * | 2007-03-21 | 2007-08-22 | 友达光电股份有限公司 | Organic electroluminescent display panel |
| CN101136174A (en) * | 2003-11-27 | 2008-03-05 | 三星Sdi株式会社 | Light emitting display, display panel, and driving method thereof |
| CN101866619A (en) * | 2010-05-06 | 2010-10-20 | 友达光电股份有限公司 | Pixel circuit of organic light-emitting diode, display and driving method thereof |
| CN101996579A (en) * | 2010-10-26 | 2011-03-30 | 华南理工大学 | Pixel driving circuit and method of active organic electroluminescent display |
| US20110109598A1 (en) * | 2009-11-06 | 2011-05-12 | Samsung Mobile Display Co. | Pixel and organic light emitting display device using the same |
-
2011
- 2011-06-21 CN CN201110168035.2A patent/CN102654972B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101136174A (en) * | 2003-11-27 | 2008-03-05 | 三星Sdi株式会社 | Light emitting display, display panel, and driving method thereof |
| CN1684558A (en) * | 2004-04-12 | 2005-10-19 | 三洋电机株式会社 | Organic electroluminescence pixel circuit |
| CN101022124A (en) * | 2007-03-21 | 2007-08-22 | 友达光电股份有限公司 | Organic electroluminescent display panel |
| US20110109598A1 (en) * | 2009-11-06 | 2011-05-12 | Samsung Mobile Display Co. | Pixel and organic light emitting display device using the same |
| CN101866619A (en) * | 2010-05-06 | 2010-10-20 | 友达光电股份有限公司 | Pixel circuit of organic light-emitting diode, display and driving method thereof |
| CN101996579A (en) * | 2010-10-26 | 2011-03-30 | 华南理工大学 | Pixel driving circuit and method of active organic electroluminescent display |
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021338A (en) * | 2012-12-24 | 2013-04-03 | 北京京东方光电科技有限公司 | Pixel circuit, method for driving same and display device |
| CN103021338B (en) * | 2012-12-24 | 2015-08-05 | 北京京东方光电科技有限公司 | Image element circuit and driving method, display device |
| CN104575369A (en) * | 2013-10-21 | 2015-04-29 | 上海和辉光电有限公司 | Pixel drive circuit and display device |
| US9536476B2 (en) | 2013-12-24 | 2017-01-03 | Boe Technology Group Co., Ltd. | Gate driver circuit, gate driving method, gate-on-array circuit, display device, and electronic product |
| CN103714780A (en) * | 2013-12-24 | 2014-04-09 | 京东方科技集团股份有限公司 | Grid driving circuit, grid driving method, array substrate row driving circuit and display device |
| US9514683B2 (en) | 2013-12-26 | 2016-12-06 | Boe Technology Group Co., Ltd. | Gate driving circuit, gate driving method, gate on array (GOA) circuit and display device |
| US9620061B2 (en) | 2013-12-30 | 2017-04-11 | Boe Technology Group Co., Ltd. | Gate driver circuit, gate driving method, gate-on-array circuit, display device, and electronic product |
| CN104157234A (en) * | 2014-01-17 | 2014-11-19 | 北京京东方光电科技有限公司 | Circuit and method for driving pixel unit, and display device |
| WO2015188470A1 (en) * | 2014-06-09 | 2015-12-17 | 京东方科技集团股份有限公司 | Pixel drive circuit, and drive method and display device thereof |
| US9691327B2 (en) | 2014-06-09 | 2017-06-27 | Boe Technology Group Co., Ltd. | Pixel driving circuit, driving method thereof and display apparatus |
| CN104616621A (en) * | 2015-02-05 | 2015-05-13 | 京东方科技集团股份有限公司 | Pixel circuit, and drive method and display device thereof |
| CN104616621B (en) * | 2015-02-05 | 2017-04-12 | 京东方科技集团股份有限公司 | Pixel circuit, and drive method and display device thereof |
| CN105609055A (en) * | 2016-03-25 | 2016-05-25 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof and display device |
| US10176757B2 (en) | 2016-03-25 | 2019-01-08 | Boe Technology Group Co., Ltd. | Pixel circuit and driving method thereof, and display device |
| US10510297B2 (en) | 2016-12-27 | 2019-12-17 | Boe Technology Group Co., Ltd. | Pixel circuit, driving method thereof, display panel and display device |
| WO2018120701A1 (en) * | 2016-12-27 | 2018-07-05 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, display panel, and display |
| CN107146579A (en) * | 2017-07-06 | 2017-09-08 | 深圳市华星光电半导体显示技术有限公司 | A kind of AMOLED pixel-driving circuits and image element driving method |
| CN107146579B (en) * | 2017-07-06 | 2018-01-16 | 深圳市华星光电半导体显示技术有限公司 | A kind of AMOLED pixel-driving circuits and image element driving method |
| WO2019006851A1 (en) * | 2017-07-06 | 2019-01-10 | 深圳市华星光电半导体显示技术有限公司 | Amoled pixel driving circuit and pixel driving method |
| CN109509431A (en) * | 2017-09-14 | 2019-03-22 | 京东方科技集团股份有限公司 | Pixel circuit and its driving method, display device |
| US11200832B2 (en) | 2017-09-14 | 2021-12-14 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Pixel circuit, driving method thereof, and display apparatus |
| CN108877684A (en) * | 2018-08-31 | 2018-11-23 | 合肥鑫晟光电科技有限公司 | Pixel circuit and its driving method, array substrate, display panel, display device |
| CN110060630A (en) * | 2019-05-06 | 2019-07-26 | 深圳市华星光电半导体显示技术有限公司 | Pixel-driving circuit and display panel |
| WO2020224072A1 (en) * | 2019-05-06 | 2020-11-12 | 深圳市华星光电半导体显示技术有限公司 | Pixel drive circuit and display panel |
| CN110060630B (en) * | 2019-05-06 | 2021-03-16 | 深圳市华星光电半导体显示技术有限公司 | Pixel driving circuit and display panel |
| CN110782842A (en) * | 2019-11-25 | 2020-02-11 | 南京中电熊猫平板显示科技有限公司 | Self-luminous display device and in-pixel compensation circuit |
| CN113571009A (en) * | 2021-07-22 | 2021-10-29 | 深圳市华星光电半导体显示技术有限公司 | Light emitting device driving circuit, backlight module and display panel |
| CN115440161A (en) * | 2022-11-09 | 2022-12-06 | 惠科股份有限公司 | Pixel driving circuit and display panel |
| CN115440161B (en) * | 2022-11-09 | 2023-03-24 | 惠科股份有限公司 | Pixel driving circuit and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102654972B (en) | 2015-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102654972A (en) | Active matrix organic light emitting diode (AMOLED) and drive circuit and method of AMOLED | |
| CN102651192A (en) | Active matrix/organic light emitting diode and driving circuit and method thereof | |
| US10242625B2 (en) | Pixel driving circuit, pixel driving method and display apparatus | |
| CN102044212B (en) | Voltage driving pixel circuit, driving method thereof and organic lighting emitting display (OLED) | |
| CN102651194B (en) | Voltage driving pixel circuit, driving method thereof and display panel | |
| US9984615B2 (en) | Pixel driving circuit, driving method, array substrate and display device ensuring luminance uniformity of light-emitting device | |
| KR20210134833A (en) | Drive circuit and driving method therefor, and display apparatus | |
| US10217410B2 (en) | Light emission controller for display device, method of driving the same, and organic light-emitting display device including the same | |
| CN106548753A (en) | AMOLED pixel drivers system and AMOLED image element driving methods | |
| CN105590955A (en) | Pixel circuit and driving method thereof, and active matrix organic light emitting display | |
| US11551606B2 (en) | LED driving circuit, display panel, and pixel driving device | |
| CN111613180A (en) | AMOLED pixel compensation driving circuit and method and display panel | |
| CN104751804A (en) | Pixel circuit, driving method thereof and relevant device | |
| CN107230452A (en) | A kind of pixel-driving circuit and driving method | |
| CN106782322A (en) | AMOLED pixel-driving circuits and AMOLED image element driving methods | |
| CN104485071A (en) | Pixel circuit, driving method thereof and active matrix OLED (organic lighting emitting diode) | |
| US20190228708A1 (en) | Pixel circuit, pixel driving method and display device | |
| US11244618B2 (en) | AMOLED pixel driving circuit and driving method | |
| CN103413520A (en) | Pixel drive circuit, display device and pixel drive method | |
| WO2016086626A1 (en) | Pixel driving circuit, pixel driving method and display device | |
| CN111048044B (en) | Voltage programming type AMOLED pixel driving circuit and driving method thereof | |
| CN107393477B (en) | Top emitting AMOLED pixel circuit and its driving method | |
| US10748489B2 (en) | Pixel driving circuit and driving method thereof, and display apparatus | |
| CN104575394A (en) | AMOLED (active matrix organic light emitting display) pixel driving circuit and pixel driving method | |
| CN105761664B (en) | Pixel circuit and its driving method and active matrix/organic light emitting display |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |