CN102005182A - Driving circuit of pixel and method for driving pixel - Google Patents

Driving circuit of pixel and method for driving pixel Download PDF

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Publication number
CN102005182A
CN102005182A CN2010105640754A CN201010564075A CN102005182A CN 102005182 A CN102005182 A CN 102005182A CN 2010105640754 A CN2010105640754 A CN 2010105640754A CN 201010564075 A CN201010564075 A CN 201010564075A CN 102005182 A CN102005182 A CN 102005182A
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voltage
switch
electric capacity
tft
thin film
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CN2010105640754A
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Chinese (zh)
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聂建名
蔡宗廷
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友达光电股份有限公司
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Publication of CN102005182A publication Critical patent/CN102005182A/en

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Abstract

The invention provides a method for driving a pixel and a driving circuit of the pixel. The method comprises the following steps of: charging the first end and the second end of a first capacitor according to a reference voltage and a reset voltage respectively, and simultaneously switching on a third switch; floating the second end of the first capacitor; charging the first end of the first capacitor according to a data voltage, and switching off the third switch; and floating the first end of the first capacitor, and switching on the third switch. Therefore, a driving current irrelevant with the variation of an N-type thin film transistor process and the span voltage of an organic light-emitting diode can be determined by the voltage difference between the first end and the second end of the first capacitor.

Description

The method of the driving circuit of pixel and driving pixel

Technical field

The present invention relates to a kind of driving circuit and driving method of pixel of active-matrix organic light emitting diode display, refer to driving circuit and driving method especially about a kind of pixel of the active-matrix organic light emitting diode display that cross-pressure influenced that is not subjected to technologic difference of thin film transistor (TFT) and Organic Light Emitting Diode.

Background technology

Because active-matrix Organic Light Emitting Diode (active matrix OLED, AMOLED) metal wire of the common cold end of the driving circuit of the pixel of display has impedance, and the voltage that therefore drives the source terminal (common cold end) of the N type thin film transistor (TFT) of different Organic Light Emitting Diodes may be different.So, make the flow through drive current of Organic Light Emitting Diode different.Because the brightness of Organic Light Emitting Diode is controlled by drive current, therefore, the different situation of above-mentioned drive current can cause panel luminance inhomogeneous.

In addition, because the influence of thin film transistor (TFT) technology, the threshold values (VTH) that drives the thin film transistor (TFT) of each Organic Light Emitting Diode is not necessarily identical, therefore, even give identical data voltage, the drive current that it produced still can be variant, causes panel luminance inhomogeneous; Add Organic Light Emitting Diode after operation a period of time, the cross-pressure on it can rise because of material degradation, and therefore under original data voltage operation, the brightness meeting of pixel is lower, produces the phenomenon of ghost (image sticking).

Summary of the invention

One embodiment of the invention provide a kind of driving circuit of pixel of active-matrix organic light emitting diode display.This driving circuit comprises one first switch, a second switch, one the 3rd switch, a N type thin film transistor (TFT), one first electric capacity and an Organic Light Emitting Diode.This first switch has one first end, one second end and one the 3rd end, and this first end is in order to receive a reference voltage or a data voltage, and this second end is in order to receive one first switching signal; This second switch has one first end, one second end and one the 3rd end, and this first end is reseted voltage in order to receive one, and this second end is in order to receive a second switch signal; The 3rd switch has one first end, one second end and one the 3rd end, and this first end is in order to receive one first voltage, and this second end is in order to receive one the 3rd switching signal; This N type thin film transistor (TFT) has one first end, one second end and one the 3rd end, and this first end is coupled to the 3rd end of the 3rd switch, and this second end is coupled to the 3rd end of this first switch, and the 3rd end is coupled to the 3rd end of this second switch; This first electric capacity has one first end and one second end, and this first end is coupled to the 3rd end of this first switch, and this second end is coupled to the 3rd end of this second switch; Reach this Organic Light Emitting Diode and have one first end and one second end, this first end is coupled to the 3rd end of this N type thin film transistor (TFT), and this second end is coupled to one second voltage.

Another embodiment of the present invention provides a kind of method that drives the pixel of active-matrix organic light emitting diode display.This method comprises uses a reference voltage that the second end charging of voltage to this first electric capacity reseted in first end charging and of one first electric capacity, and opens one the 3rd switch simultaneously, and wherein this reference voltage is reseted the voltage height than this; Second end of this first electric capacity of suspension joint; According to the first end charging of a data voltage, and close the 3rd switch to this first electric capacity; And first end of this first electric capacity of suspension joint, and open the 3rd switch.

The method of the pixel of the driving circuit of the pixel of a kind of active-matrix organic light emitting diode display provided by the present invention and driving active-matrix organic light emitting diode display, by utilizing the one drive circuit of four thin film transistor (TFT)s, two electric capacity (4T2C), the drive current that the cross-pressure of generation and a technologic difference of a thin film transistor (TFT) and an Organic Light Emitting Diode is irrelevant.Therefore, the present invention can reduce the difference of drive current between different pixels, improves the situation of this oled luminance decay and panel luminance inequality.

Description of drawings

Fig. 1 is the synoptic diagram of the driving circuit of the pixel of explanation active-matrix organic light emitting diode display;

Fig. 2 is the synoptic diagram of the driving circuit of the pixel of explanation active-matrix organic light emitting diode display;

Fig. 3 is the synoptic diagram in the time sequential routine of explanation first switching signal, second switch signal and the 3rd switching signal;

Fig. 4 is the process flow diagram of the method for the pixel of explanation driving active-matrix organic light emitting diode display;

Fig. 5 A is the synoptic diagram of first period in the key diagram 3;

Fig. 5 B is the synoptic diagram of explanation driving circuit at the mode of operation of first period;

Fig. 6 A is the synoptic diagram of second period in the key diagram 3;

Fig. 6 B is the synoptic diagram of explanation driving circuit at the mode of operation of second period;

Fig. 7 A is the synoptic diagram of the 3rd period in the key diagram 3;

Fig. 7 B is the synoptic diagram of explanation driving circuit at the mode of operation of the 3rd period;

Fig. 8 A is the synoptic diagram of the 4th period in the key diagram 3;

Fig. 8 B is the synoptic diagram of explanation driving circuit at the mode of operation of the 4th period;

Fig. 9 is the synoptic diagram of the driving circuit of the pixel of explanation active-matrix organic light emitting diode display;

Figure 10 is the synoptic diagram of the driving circuit of the pixel of explanation active-matrix organic light emitting diode display.

Wherein, Reference numeral

100,200,900,1000 driving circuits, 106 electric capacity

202 first switches, 204 second switches

206 the 3rd switches, 102,104,208 N type thin film transistor (TFT)s

210 first electric capacity, 212 second electric capacity

108,214 Organic Light Emitting Diode S switching signals

The S1 first switching signal S2 second switch signal

S3 the 3rd switching signal I OLEDDrive current

Vref reference voltage Vdata data voltage

Vsus resets voltage OVDD first voltage

The OVSS second voltage A, B node

T1 second period of first period T2

T3 the 4th period of the 3rd period T4

The 400-410 step

Embodiment

Please refer to Fig. 1, Fig. 1 is explanation active-matrix Organic Light Emitting Diode (active matrix OLED, AMOLED) synoptic diagram of the driving circuit 100 of the pixel of display.As shown in Figure 1, driving circuit 100 is the circuit of 2T1C, comprises two N type thin film transistor (TFT)s 102,104, electric capacity 106 and Organic Light Emitting Diode 108.N type thin film transistor (TFT) 102 is a switch, and N type thin film transistor (TFT) 104 provides OLED 108 drive current I OLED, wherein the OVSS of the driving circuit 100 of each pixel end all is electrically connected on the panel, and the OVDD end also all is electrically connected.When driving circuit 100 drove pixel, the OVSS end had drive current I OLEDFlow through.

Please refer to Fig. 2, Fig. 2 illustrates the synoptic diagram of driving circuit 200 of the pixel of active-matrix organic light emitting diode display.Driving circuit 200 comprises first switch 202, second switch 204, the 3rd switch 206, N type thin film transistor (TFT) 208, first electric capacity 210, second electric capacity 212 and Organic Light Emitting Diode 214.First switch 202 has first end in order to receive reference voltage Vref and data voltage Vdata, and second end reaches the 3rd end in order to receive the first switching signal S1; Second switch 204 has first end and resets voltage Vsus in order to reception, and second end reaches the 3rd end in order to receive second switch signal S2, and wherein reference voltage Vref is reseted voltage Vsus height; The 3rd switch 206 has first end in order to receive the first voltage OVDD, and second end reaches the 3rd end in order to receive the 3rd switching signal S3, and wherein first switch 202, second switch 204 and the 3rd switch 206 are N type thin film transistor (TFT).N type thin film transistor (TFT) 208 has the 3rd end that first end is coupled to the 3rd switch 206, and second end is coupled to the 3rd end of first switch 202, and the 3rd end is coupled to the 3rd end of second switch 204; First electric capacity 210 has the 3rd end that first end is coupled to first switch 202, and second end is coupled to the 3rd end of second switch 204; Second electric capacity 212 has the 3rd end that first end is coupled to the 3rd switch 206, and second end is coupled to the 3rd end of N type thin film transistor (TFT) 208; Organic Light Emitting Diode 214 has the 3rd end that first end is coupled to N type thin film transistor (TFT) 208, and second end is coupled to the second voltage OVSS.

Please refer to Fig. 3, Fig. 3 illustrates the synoptic diagram in the time sequential routine of the first switching signal S1, second switch signal S2 and the 3rd switching signal S3.As shown in Figure 3, the first switching signal S1, second switch signal S2 and the 3rd switching signal S3 have the different time sequential routines.

Please refer to Fig. 4, Fig. 4 illustrates the process flow diagram of the method for the pixel that drives the active-matrix organic light emitting diode display.The method of Fig. 4 is utilized driving circuit 200 explanations of Fig. 2, and step is as follows:

Step 400: beginning;

Step 402: use reference voltage Vref to first end charging of first electric capacity 210 with reset the second end charging of voltage Vsus, and drive current I is provided simultaneously to first electric capacity 210 OLEDTo first end of N type thin film transistor (TFT) 208, second end of N type thin film transistor (TFT) 208 couples first end of first electric capacity 210, and the 3rd end of N type thin film transistor (TFT) 208 couples second end of first electric capacity 210;

Step 404: second end of suspension joint first electric capacity 210, with according to drive current I OLEDTo second end charging of first electric capacity 210, make the electric capacity 210 of winning store a bucking voltage value Vt;

Step 406: use the first end charging of data voltage Vdata, make data voltage Vdata pass through the second end controlling and driving electric current I of N type thin film transistor (TFT) 208 to first electric capacity 210 OLEDSize;

Step 408: first end of suspension joint first electric capacity 210, and according to the pressure reduction of data voltage Vdata and reference voltage Vref, decision drive current I OLEDTo drive Organic Light Emitting Diode 214;

Step 410: finish.

Being described in detail as follows of each step:

Step 402 please refer to Fig. 5 A and Fig. 5 B, and its explanation driving circuit 200 is at the mode of operation of the first period T1 and the synoptic diagram in time sequential routine.Shown in Fig. 5 A and Fig. 5 B, because the first switching signal S1, second switch signal S2 and the 3rd switching signal S3 are in logic high potential, so first switch 202, second switch 204 and the 3rd switch 206 present opening.Therefore, reference voltage Vref is to the charging of first end of first electric capacity 210 and reset the second end charging of voltage Vsus to first electric capacity 210, and drive current I OLEDFlow to first end of N type thin film transistor (TFT) 208 by the 3rd switch 206, wherein reseting voltage Vsus is dc voltage.Step 402 is utilized reference voltage Vref and is reseted voltage Vsus the both end voltage of first electric capacity 210 is done again the action that writes (reset), and purpose is for the data voltage Vdata of the pixel that drives new picture can correctly be write.At this moment, the voltage V of node A ABe reference voltage Vref, the voltage V of Node B BFor reseting voltage Vsus.

Step 404 please refer to Fig. 6 A and Fig. 6 B, and its explanation driving circuit 200 is at the mode of operation of the second period T2 and the synoptic diagram in time sequential routine.Shown in Fig. 6 A and Fig. 6 B because the first switching signal S1 at logic high potential, second switch signal S2 in logic low potential, so first switch 202 is opened, second switch 204 is closed.At this moment, reference voltage Vref is still to first end of first electric capacity 210 charging (V AStill be reference voltage Vref), and second end of first electric capacity 210 is closed because of second switch 204, and present floating.But because the 3rd switch 206 is in opening, so the voltage V of Node B BChange by drive current I OLEDDecision.Therefore, the voltage V of Node B BCan be driven electric current I OLEDBe charged to Vref-Vt because this moment N type thin film transistor (TFT) 208 second end and the voltage difference of the 3rd end be Vt, cause N type thin film transistor (TFT) 208 to close I OLEDReduce to zero, wherein Vt is the threshold voltage of N type thin film transistor (TFT) 208.Because, the voltage V of node A AVoltage V for Vref and Node B BBe Vref-Vt, so first electric capacity 210 stores bucking voltage value Vt (that is the voltage V of node A ADeduct the voltage V of Node B B).

Step 406 please refer to Fig. 7 A and Fig. 7 B, and its explanation driving circuit 200 is at the mode of operation of the 3rd period T3 and the synoptic diagram in time sequential routine.Shown in Fig. 7 A and Fig. 7 B, because the first switching signal S1 is in logic high potential, second switch signal S2 and the 3rd switching signal S3 are in logic low potential, so first switch 202 is opened, second switch 204 and the 3rd switch 206 are closed.At this moment, data voltage Vdata is by first end charging of 202 pairs first electric capacity 210 of first switch, and second end of first electric capacity 210 presents floating.Data voltage Vdata is by the second end controlling and driving electric current I of N type thin film transistor (TFT) 208 OLEDSize, and drive current I OLEDSize then corresponding to the GTG value of Organic Light Emitting Diode 214.Because the voltage V of node A ABe transformed into data voltage Vdata by the reference voltage Vref among the second period T2 of Fig. 6 B, and second end of first electric capacity 210 presents floating, thus this moment Node B voltage V B(V BEqual the 3rd terminal voltage V of N type thin film transistor (TFT) 208 S) determine according to formula (1):

V B=Vref-Vt+a(Vdata-Vref),

In the formula (1), Vdata is a data voltage, Vref is a reference voltage, and C1 is that the capacitance and the C2 of first electric capacity 210 is the capacitance of second electric capacity 212, and wherein first electric capacity 210 and second electric capacity 212 are in order to a changing voltage Vdata-Vref of second end of dividing potential drop N type thin film transistor (TFT) 208.

Step 408 please refer to Fig. 8 A and Fig. 8 B, and its explanation driving circuit 200 is at the mode of operation of the 4th period T4 and the synoptic diagram in time sequential routine.Shown in Fig. 8 A and Fig. 8 B, because the first switching signal S1 and second switch signal S2 be in logic low potential, the 3rd switching signal S3 is in logic high potential, so first switch 202 and second switch 204 are closed, the 3rd switch 206 is opened.Drive current I OLEDDrive Organic Light Emitting Diode 214 by the 3rd switch 206, so the 3rd terminal voltage V of N type thin film transistor (TFT) 208 SBe the cross-pressure VOLED that the second voltage OVSS adds Organic Light Emitting Diode 214.And because first switch 202 close, so second end of N type thin film transistor (TFT) 208 the 4th period T4 be to present floating at the beginning, the second terminal voltage V of N type thin film transistor (TFT) 208 then G(that is the voltage V of node A A) determine by formula (2):

V G=Vdata+Vt-Vref-a(Vdata-Vref)+OVSS+VOLED (2)

Because the second terminal voltage V of N type thin film transistor (TFT) 208 GWith the 3rd terminal voltage V SAll known, so the voltage difference V of second end of N type thin film transistor (TFT) 208 and the 3rd end GSCan determine according to formula (3):

V GS=V G-V S

=Vdata+Vt-Vref-a(Vdata-Vref)+OVSS+VOLED-OVSS-VOLED

=(1-a)(Vdata-Vref)+Vt (3)

Therefore, drive the drive current I of Organic Light Emitting Diode this moment OLEDDetermine by formula (4):

I OLED=k(V GS-Vt) 2=k[(1-a)(Vdata-Vref)] 2 (4)

By formula (4) as can be known, flow through the electric current I of Organic Light Emitting Diode OLEDWith the threshold voltage vt of N type thin film transistor (TFT) 208, and the second voltage OVSS is irrelevant.

In addition, please refer to Fig. 9 and Figure 10, Fig. 9 illustrates the synoptic diagram of driving circuit 900 of the pixel of active-matrix organic light emitting diode display, and Figure 10 illustrates the synoptic diagram of driving circuit 1000 of the pixel of active-matrix organic light emitting diode display.The difference of driving circuit 900 and driving circuit 200 is that first end of second electric capacity 212 is coupled to first end of the 3rd switch 206, and second end is coupled to the 3rd end of N type thin film transistor (TFT) 208; The difference of driving circuit 1000 and driving circuit 200 is that first end of second electric capacity 212 is coupled to the 3rd end of N type thin film transistor (TFT) 208, and second end is coupled to second end of Organic Light Emitting Diode 214.Yet formula (1) still is applicable to driving circuit 900 and driving circuit 1000.In addition, driving circuit 900 and driving circuit 200, all identical not the repeating them here of remainder of driving circuit 1000 and driving circuit 200.

In sum, the method of the pixel of the driving circuit of the pixel of a kind of active-matrix organic light emitting diode display provided by the present invention and driving active-matrix organic light emitting diode display, by utilizing the driving circuit of four thin film transistor (TFT)s, two electric capacity (4T2C), produce and drive current that the cross-pressure of technologic difference of thin film transistor (TFT) and Organic Light Emitting Diode has nothing to do, reduce the difference of drive current between pixel.In addition, because after Organic Light Emitting Diode uses a period of time, its cross-pressure can rise, cause brightness decay, and under the situation that the present invention can rise at the cross-pressure of Organic Light Emitting Diode, the drive current that still can keep Organic Light Emitting Diode improves the situation of brightness decay and panel luminance inequality.

Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.

Claims (19)

1. the driving circuit of the pixel of an active-matrix organic light emitting diode display is characterized in that, comprises:
One first switch has one first end, one second end and one the 3rd end, and this first end is in order to receive a reference voltage or a data voltage, and this second end is in order to receive one first switching signal;
One second switch has one first end, one second end and one the 3rd end, and this first end is reseted voltage in order to receive one, and this second end is in order to receive a second switch signal;
One the 3rd switch has one first end, one second end and one the 3rd end, and this first end is in order to receive one first voltage, and this second end is in order to receive one the 3rd switching signal;
One N type thin film transistor (TFT) has one first end, one second end and one the 3rd end, and this first end is coupled to the 3rd end of the 3rd switch, and this second end is coupled to the 3rd end of this first switch, and the 3rd end is coupled to the 3rd end of this second switch;
One first electric capacity has one first end and one second end, and this first end is coupled to the 3rd end of this first switch, and this second end is coupled to the 3rd end of this second switch;
One Organic Light Emitting Diode has one first end and one second end, and this first end is coupled to the 3rd end of this N type thin film transistor (TFT), and this second end is coupled to one second voltage.
2. driving circuit according to claim 1 is characterized in that, this first switching signal, this second switch signal and the 3rd switching signal have different sequential.
3. driving circuit according to claim 1 is characterized in that, this first electric capacity is in order to store a bucking voltage value.
4. driving circuit according to claim 1 is characterized in that, other comprises one second electric capacity, has one first end and one second end, and this first end is coupled to the 3rd end of the 3rd switch, and this second end is coupled to the 3rd end of this N type thin film transistor (TFT).
5. driving circuit according to claim 4 is characterized in that, a changing voltage of this second end of this N type thin film transistor (TFT) is according to this first electric capacity and this second capacitance partial pressure.
6. driving circuit according to claim 1 is characterized in that, the 3rd switch is in order to provide this Organic Light Emitting Diode one drive current.
7. driving circuit according to claim 6 is characterized in that, this data voltage is in order to control this drive current.
8. driving circuit according to claim 1 is characterized in that, this first end of this first electric capacity discharges and recharges the open and close according to this first switch.
9. driving circuit according to claim 1 is characterized in that, this second end of this first electric capacity discharges and recharges the open and close according to this second switch.
10. driving circuit according to claim 1 is characterized in that this reference voltage is reseted the voltage height than this.
11. driving circuit according to claim 1 is characterized in that, this first switch, this second switch and the 3rd switch are N type thin film transistor (TFT).
12. driving circuit according to claim 1 is characterized in that, other comprises one the 3rd electric capacity, has one first end and one second end, and this first end is coupled to this first end of the 3rd switch, and this second end is coupled to the 3rd end of this N type thin film transistor (TFT).
13. driving circuit according to claim 1, it is characterized in that other comprises one the 4th electric capacity, have one first end and one second end, this first end is coupled to the 3rd end of this N type thin film transistor (TFT), and this second end is coupled to this second end of this Organic Light Emitting Diode.
14. a method of utilizing the described driving circuit of claim 1 to drive the pixel of active-matrix organic light emitting diode display is characterized in that, comprises:
According to this reference voltage the second end charging of voltage to this first electric capacity reseted in the charging of first end of this first electric capacity and this, and open the 3rd switch simultaneously, wherein this reference voltage is reseted the voltage height than this;
Second end of this first electric capacity of suspension joint;
According to of the first end charging of this data voltage, and close the 3rd switch to this first electric capacity; And
First end of this first electric capacity of suspension joint, and open the 3rd switch.
15. method according to claim 14 is characterized in that, this reference voltage is by the first end charging of this first switch to this first electric capacity, and this resets voltage by the second end charging of this second switch to this first electric capacity.
16. method according to claim 14 is characterized in that, second end of this first electric capacity of suspension joint is to close second end of this second switch with this first electric capacity of suspension joint.
17. method according to claim 14 is characterized in that, behind second end of this first electric capacity of suspension joint, second terminal voltage of this N type thin film transistor (TFT) is this reference voltage, and the 3rd terminal voltage of this N type thin film transistor (TFT) determines according to following equation:
Vs=Vref-Vt;
Wherein:
Vs is the voltage of second end of this first electric capacity;
Vref is this reference voltage; And
Vt is the threshold voltage of this N type thin film transistor (TFT).
18. method according to claim 14, it is characterized in that, according to of the first end charging of this data voltage to this first electric capacity, and after closing this drive current, second terminal voltage of this N type thin film transistor (TFT) is this data voltage, the 3rd terminal voltage V of this N type thin film transistor (TFT) sDetermine according to following equation:
V s=Vref-Vt+a(Vdata-Vref),
Wherein:
Vdata is this data voltage; And
C1 is the capacitance of one second electric capacity for the capacitance and the C2 of this first electric capacity.
19. method according to claim 14, it is characterized in that, first end of this first electric capacity of suspension joint, and open this drive current with after driving this Organic Light Emitting Diode, the 3rd terminal voltage of second terminal voltage of this N type thin film transistor (TFT) and this N type thin film transistor (TFT) determines according to following equation:
V G=Vdata+Vt-Vref-a(Vdaa-Vref)+OVSS+VOLED,
V S=OVSS+VOLED;
Wherein:
V GSecond terminal voltage for this N type thin film transistor (TFT);
C1 is that the capacitance and the C2 of this first electric capacity is the capacitance of this second electric capacity;
OVSS is a terminal voltage of this Organic Light Emitting Diode; And
VOLED is the cross-pressure of this Organic Light Emitting Diode.
CN2010105640754A 2010-11-18 2010-11-18 Driving circuit of pixel and method for driving pixel CN102005182A (en)

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Application publication date: 20110406