CN101983420B - Autofocus method and apparatus for wafer scribing - Google Patents
Autofocus method and apparatus for wafer scribing Download PDFInfo
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- CN101983420B CN101983420B CN2009801112711A CN200980111271A CN101983420B CN 101983420 B CN101983420 B CN 101983420B CN 2009801112711 A CN2009801112711 A CN 2009801112711A CN 200980111271 A CN200980111271 A CN 200980111271A CN 101983420 B CN101983420 B CN 101983420B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
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- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Dicing (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Automatic Focus Adjustment (AREA)
Abstract
A method and an apparatus perform real time autofocus for a wafer scribing system. The method and apparatus uses polarized light (42) directed to the surface (50) of the wafer (10) directly under the objective lens (26) for the scribing laser beam at a grazing angle. The light reflected from the wafer is filtered (56) to remove light from the scribing laser beam and then focused on a position sensitive device (58) to measure the distance from the objective lens to the wafer surface.
Description
Technical field
The invention relates to the method and apparatus for line electronic silicon wafer.Specifically, the invention relates to for carrying out in order to the method and apparatus of LED silicon wafer to help the real-time focusing of the laser beam of cutting list (singulation) of ruling.More particularly, the invention relates to for when system makes wafer scribing, the position on the surface of the transparent or semitransparent LED silicon wafer of accurate and efficient detecting is with the method and apparatus of correct relation between the surface of the focus that is maintained in real time laser beam and silicon wafer.
Background technology
Electronic installation can be formed in its substrate that contains many parts of devices or silicon wafer usually for easy manufacturing.These devices be must encapsulation with peddle before separate or cut list.A typical method cutting single-electron device is to use a kind of laser scribing system to rule this silicon wafer and then it being ready to for doing machine cuts along line.Fig. 1 shows silicon wafer 10 support electronics, and an electronic installation is to be designated as 12.What also be instructed to out is the example of " raceway groove (street) " 14, and raceway groove 14 is the zones between electronic installation, rules in the above and separates to be used for that these devices are made follow-up machinery each other.The electronic installation of the example of manufacturing comprises light-emitting diode (LED, light emitting diode) in this way.Although also can use other material, LED typically is manufactured on by crystal sapphire or metal silicon wafer.After manufacturing, these silicon wafers then use a machine saw or laser to cut list by line, then cut apart to separate these devices as machinery.
The laser scribing system rules with laser and has semiconductor grain and grow up in the silicon wafer on a surface of silicon wafer, and silicon wafer is loaded on a levelling bench.When this levelling bench during with (typical case is between 10 mm/second (mm/s) and 100mm/s) translation at a high speed, laser beam is that the raceway groove of the individual semiconductor die that defines on se aration of silicon wafers top or bottom end surface clashes into top end surface.Laser beam and the reciprocation between silicon wafer in strong-focusing are to produce from the teeth outwards otch (kerf) or groove, allow silicon wafer to do neatly mechanical type along raceway groove and cut off.Crystal grain on silicon wafer then can separate and each crystal grain can use to make a device.The system that carries out an example of this wafer scribing function is the AccuScribeAS2000FX by assignee's manufacturing of the present invention.This system is that a kind of diode that uses its harmonic frequency to be offset to the UV wavelength helps the Pu solid-state laser with line light-emitting diode (LED) silicon wafer.
Fig. 2 is the schematic diagram of a kind of wafer scribing of demonstration system.One laser 20 is to produce a work laser beam 22, it is by laser beam optics 24 formed therebies and points to object lens 26, object lens 26 are focusing work laser beam 22 to one laser spots 30, and this laser spot 30 points to a workpiece 32, and workpiece 32 is a silicon wafer in this example.Object lens 26 are to be affixed to a support 28, and support 28 is affixed to system base 36, and system base 36 is to be typically to comprise the large-scale base plate that is made by granite or other dense material.System base 36 is supported XY chuck 34, and XY chuck 34 is supporting workpiece 32 securely.XY chuck 34 programmables move this silicon wafer below work laser, along with laser spot 30 machinings form line from the teeth outwards from the material of workpiece 32.Support 28, system base 36, running together with XY chuck 34 still keep the accurate vertical relation of laser spot 30 and workpiece 32, with just size, shape and the quality of keeping section when workpiece 32 moves along with XY chuck 34.
For and equably line efficient to silicon wafer, laser beam should be focused to the plane near the silicon wafer top end surface.In other words, the distance between object lens and silicon wafer surface has an optimum value.This is to add all strict requirements in flatness and the silicon wafer consistency of thickness of silicon wafer surface, reduces output and raises the cost, unless these silicon wafers are efficiently to process.The average thickness of one silicon on sapphire wafer changes up to 10 microns for the Different Silicon wafer, and on the silicon wafer of 2 inches, the variation of surface flatness (when being mounted to a vacuum chuck) is up to 15 microns.Even the metallic silicon wafer surface is to be installed on a vacuum chuck also may be distortion, and may have the apparent height difference up to 150 microns on the silicon wafer of 2 inches.Required in order to satisfy, focus on the work laser beam, with in a smallest spot size that has 10 to 50 microns near silicon wafer surface, with the trench scribe line of wanted hierarchy structure to the surface of silicon wafer.Laser focusing needs a high-NA (NA, numerical aperture) lens so that this bundle defocuses rapidly at the upper and lower of focus for being down to this little spot size.As a result, within when line can wish laser spot is remained in silicon wafer top end surface ± 5 micron or more preferably be positioned at ± 2 microns within.
A kind of possible settling mode for this problem is to follow the trail of the surface of silicon wafer when ruling, and uses Techniques of Automatic Focusing with the relationship change between detecting workpiece and laser spot.Techniques of Automatic Focusing comprises passive method and active method.Passive method is to use image contrast to quantize defocusing amount.The displacement that active method need to come from a light beam of a light source and use this light beam or image is to quantize defocusing amount.Active method is many fast compared to passive method, and, can satisfy be used to following the trail of self-focusing requirement of real time during higher than 10 mm/second (mm/s) when the relative velocity between silicon wafer mounting platform and UV laser beam.A kind of active auto focusing method commonly used is by United States Patent (USP) the 6th, 486, No. 457 describe, wherein, the laser beam of a collimation is by object lens and focus to a plane near silicon wafer surface from shaft type.Reflecting bundle is then will be by object lens for the second time and by being detected by a position sensitive detector.Variable in distance between silicon wafer surface and object lens will cause the reflecting bundle skew, and the position sensitive detector is proportional to generation one signal of skew.This signal is can use to adjust the distance between silicon wafer surface and object lens and guarantee that this distance is fixing, has therefore realized tracing type automatic focus.Yet the method is the limited catching range such as the thin transparent silicon wafer of silicon on sapphire wafer that has for being used for that LED makes, because all can be detected by the position sensitive detector from the reflection of silicon wafer top and bottom end surface.If bottom end surface has unequal reflectivity in zones of different, it is not good that self-focusing accuracy will seem.
The explanation of the another kind of active auto focusing method of commonly using is found in United States Patent (USP) the 4th, 363, and No. 962 and the 5th, 361, No. 122.Do not adopt the mode by object lens, at first use an extra lens projects in silicon wafer surface and then use another extra lens further to be projeced into a position sensitive detector from the light beam of this automatic focus light source.Impinging light beam silicon wafer and with a glancing angle reflection.In this method, object lens, light source, extra lens, all has fixedly relative position with the position sensitive detector.Other method relates to the height of adjusting silicon wafer mounting platform or object lens (with attachment other member thereon) and is positioned on the focussing plane of object lens to guarantee this silicon wafer surface.United States Patent (USP) the 5th, 008 uses the method No. 705 and together with interferometry.United States Patent (USP) the 5th, 825, No. 469 is to improve the sensitivity of the method for twice by this light beam of reflection on silicon wafer surface.United States Patent (USP) the 5th, 675, No. 140 is in conjunction with the method and astigmat method, by Donald K.Cohen, Wing Ho Gee, M.Ludeke, described in one piece of journal article " auto focus control: astigmat method " of the 23rd phase of Application Optics 1984 Christian eras 565-570 page with Julian Lewkowicz.These lists of references do not propose particular requirement: the bottom end surface of silicon wafer can have different reflectivity at diverse location.
The further difficulty of fixed relationship of keeping between laser beam spots position and substrate surface is to be: LED and other electronic installation are on the transparency carrier that sometimes is manufactured in such as sapphire or glass substrate.Because the top end surface of these silicon wafers is can be transparent or semitransparent and can be smoothly or coarse, this will provide extra problem.The bottom end surface of silicon on sapphire wafer may have pattern and on diverse location reflectivity may change to some extent.For being dependent on from the reflection of the silicon wafer autofocus system with the prior art measured, a plurality of signals that this may cause intensity to change, this will cause confusion and cause lower accuracy of measurement or stop this system to operate fully system.
Therefore, need a kind of method and apparatus of measuring in real time the top end surface position of transparent or semitransparent silicon wafer along with wafer scribing, its accurately detect translucent with the surface of transparent silicon wafer not by from the reflection of the change of the top of silicon wafer and basal surface confusion.
Summary of the invention
A target of the present invention is to propose a kind of method for measuring by the displacement between a work laser beam foucing and a workpiece that is carried out laser processing by the laser beam foucing of working.Another target of the present invention is the displacement of measuring between a work laser beam foucing and a workpiece, and wherein, workpiece is made by a transparent or semitransparent material, such as: sapphire.Another target of the present invention is the displacement of measuring in real time between a laser beam foucing and a workpiece.
For the unit cost of production that the performance that improves the LED scoring system and reduction are directed to client, use a kind of autofocus of following the trail of to allow a laser scribing system to control focusing work laser beam to the object lens of LED silicon wafer surface and the distance between silicon wafer surface when the silicon wafer horizontal translation.In one embodiment of the present of invention, follow the trail of autofocus and formed by being directed to the laser diode bundle that collimates, polarizes by one of a pin hole and condenser lens.Select enough short wavelength in order to the laser beam of measuring the surface to be beneficial to spot size enough little of the Measurement accuracy silicon wafer, but the electricity that avoided working laser beam or the laser beam of certainly working produce is starched the interference of cloud institute emitted radiation.
Laser beam is then by the top end surface of a prism with the glancing angle silicon wafer pointed between 84 and 87 degree of vertical line.In addition, configuration linearly polarized laser beam makes polarization plane be parallel to silicon wafer surface (s polarization).The combination of glancing angle and polarised direction causes most laser beam energy from the reflection of the top end surface of silicon wafer and thereby has avoided interference from the basal surface reflection of transparent silicon wafer.This configuration also makes the maximum that is reflected into from metal substrate, because the s polarized wave is by the metal surface high reflection.
In case being the top surface by silicon wafer, this laser beam reflected, it points to lens by a prism, laser beam to one band pass filter that these lens are focus reflections, this band pass filter filter from the radiation of work laser beam frequency and allow oneself pass through in order to the radiation of the laser beam of meter face.This has improved the signal noise ratio (SNR, signal to noise ratio) of the data obtained.Be projected to the position sensitive device (PSD, position sensitive device) of a measurement laser beam position from this.This information digitalization and by to a controller, this controller calculates the height of silicon wafer from the displacement of laser beam on PSD.
One embodiment of the present of invention also operate the height with real-time calculating silicon wafer surface, and the meaning is: when the work laser beam cuts a section of silicon wafer, and can measuring height.This is to allow the laser processing system periodic to upgrade the silicon wafer height to measure.Because be coupled to be attached to can the real time altering object lens and silicon wafer between the control of support of displacement, during for line, this embodiment can measure displacement and variation when silicon wafer.This be the permission system rule these silicon wafers that can't rule (due to these silicon wafers do not have can't real-time tracing and adjust a needed flatness of system of height), thereby improve and make output.
In addition, one embodiment of the present of invention are that projection is measured laser beam to workpiece, in order to throw than the large many ellipses of laser spot sizes.By the projecting laser bundle by a circular pin hole and then for glancing angle projecting laser bundles of 84 to 87 degree to workpiece, laser beam forms an elliptical shape on workpiece.This is average than original spot size larger area reflection, therefore average its due to the pollution on workpiece or the caused pseudo of unexpected characteristics, thereby strengthened measurement.
This workpiece is to be relevant to this laser spot to move, and this moves is greater than 10 mm/second (mm/s) and less than 1000 mm/second (mm/s).
Description of drawings
Fig. 1 is a kind of schematic diagram that contains the typical prior art silicon wafer of electronic installation.
Fig. 2 is the schematic diagram of a kind of prior art wafer scribing system.
Fig. 3 is a kind of schematic diagram of autofocus system.
Fig. 4 is a kind of schematic diagram of the wafer scribing system with autofocus system.
Embodiment
As will be described herein, the present invention is the problem that solves prior art, and the laser beam by using a polarization of having selected wavelength, glancing angle is to avoid interference from work laser beam or electricity slurry plumage with the displacement between real-time surveying work laser beam foucing and workpiece.
Fig. 3 shows one embodiment of the present of invention.One collimatied beam 42 is launched and subsequently by little circular aperture or pin hole 44, an illuminating lens 46 and a prism 48 by a laser diode 40.The laser diode that is directed to the example that this purpose uses is the 0222-002-01 by the Coherent company manufacturing of California, USA SantaClara, and operates in approximately a power of 1.6 milliwatts and the wavelength of 650 nanometers (nm).Distance between distance between aperture 44 and lens 46, lens 46 and silicon wafer top surface 50 is about two times of focal length of lens 46.This aperture so imaging are to its plane near silicon wafer top end surface 50.This light beam clashes into silicon wafer top end surface 50 with a glancing angle; Incidence angle is between 84 and 87 degree.Most light beam from top end surface reflection and subsequently by a prism 52, beam dump lens 54, with a band pass filter 56, then arrive a position sensitive detector (PSD) 58 in point 74.Band pass filter 56 be during wafer scribing and shield it comprise electricity slurry beam emissions around light beam and therefore modified signal noise ratio (SNR).Laser diode 40 is to aim to guarantee that when this bundle this bundle polarizes as s when clashing into silicon wafer surface.Use when being thin and transparent the light beam of s polarization to improve SNR when silicon wafer, because less light beam will be from the reflection of silicon wafer bottom end surface, the most of light beams that therefore arrive PSD 58 will reflect from top end surface.Large incidence angle causes the long elliptical beam in silicon wafer surface, a therefore average large-area reflectivity.Long oval spot on silicon wafer surface is also to tend to minimize fine pattern or the caused measure error of particle contamination that makes by top or bottom end surface.Distance between distance between silicon wafer top end surface 50 and lens 54, lens 54 and PSD 58 is about two times of focal length of lens 54.Therefore aperture 44 images on PSD 58 at last.Silicon wafer is installed on an x-y platform (not shown), and member 40,42,44,46 and 48 (it consists of output 38) and member 52,54,56,58 and 60 (it consists of importation 51) are installed on a z platform.PSD output is connected to a location sensing amplifier 60, and then in order to form a servo loop of z platform together with a controller (not shown).Silicon wafer or optical system or both can be installed on the z platform.
For the line result of the best, can use the focussing plane of UV object lens and the limited skew between silicon wafer surface.Check that the line result is with the distance of initialization between object lens and silicon wafer surface.The automatic focus member of then adjusting Fig. 3 with the image of guaranteeing the aperture just be positioned at object lens below.Then throw this image to 1: 74 of PSD 58.If the top end surface of the silicon wafer of ruling is non-flat forms, when the translation of x-y platform, beam path will change.For example, due to the flatness of silicon wafer or the variation of thickness, be that top surface when workpiece 50 is the beam path that moves to a reposition 70 in the dotted line 72 of Fig. 3.In this example, the distance between object lens and silicon wafer is for long compared to optimum distance.Laser beam be with skew for away from point 74 to one repositions 76 of PSD 58, and PSD 58 is that to produce it be a signal that is proportional to the laterally offset of laser beam.This signal be amplification, digitlization and be sent to the z platform controller so that the z platform for towards and recover optimum distance between object lens and silicon wafer surface.PSD signal feedback and the formed servo loop of vertical platform controller be so guarantee be: permanent in best in the distance between object lens and silicon wafer surface during the platform translation.This has guaranteed the best line result on whole silicon wafer.
Using and following the trail of autofocus system is novel to help the line sapphire or the metallic silicon wafer that are used for the LED manufacturing.By use the polarization of suitable light beam, increase a band pass filter before PSD, use a laser diode with stable output mode, use a suitable aperture size and use a high-resolution side direction pattern PSD to make this system simpler and more strong compared to the system of aforesaid prior art.As being discussed in system specialization, use the polarization of suitable light beam and increase a band pass filter before PSD with improvement SNR.Laser diode is to have stable beam shape.This aperture is imaging but not directly shoots the laser diode light beam on PSD, therefore do not need reference arm.Choose laser diode power and aperture size to have the enough laser powers that arrive PSD, operate under optimum condition at the laser LED during scribing to guarantee this PSD and amplifier.Pinhole size is also enough greatly throwing a sufficiently long oval spot in silicon wafer surface, and therefore average PSD signal on an area of silicon wafer is avoided the bad response from silicon wafer top end surface dirt.One high-resolution PSD 58 has increased self-focusing sensitivity, and the double reflection of silicon wafer is unnecessary.Use a kind of two (Duo-) side direction or four (Tetra-) side direction PSD (from the part #1L5SP of On-Trak Photonics company) to simplify system alignment and the automatic focus catching range on PSD is increased to several millimeters from hundreds of microns to replace a kind of segmented optical diode PSD.Lens 46 can be different from the focal length of lens 54.Distance between distance between distance between distance between aperture 44 and lens 46, silicon wafer surface 50 and lens 54, silicon wafer surface 50 and lens 54 and lens 54 and PSD 58 does not need accurately two times for these focal lengths of lens.Depart from the several millimeters tracking automatic focuses and the performance of aiming at that will can not affect system, so seriousness is not high.
Fig. 4 shows a kind of laser processing system 80, and this laser processing system 80 has automatic focus output 38, the importation 51 and object lens 26 that is attached to a Z axis servomechanism 78.As mentioned above, change in displacement between laser beam 42 detecting workpiece 32 and object lens 26, signal to one a controller (not shown) is just sent in importation 51, cause Z axis servomechanism 78 to move these object lens 26, output 38, come compensate for displacement change and it is returned to its nominal value with importation 51, thereby kept the institute's wish relation between work laser spot 30 and workpiece 32.
By gain and the frequency range of suitable setting by z platform and the formed servo loop of PSD signal, automatic focus response is that can to follow the trail of in an x-y platform speed be the silicon wafer surface height change across 150 microns (μ m) of the silicon wafer of one 2 inches of 70 mm/second (mm/s).Be directed to this and use, the frequency range of servo loop is～50 hertz (Hz).Have pattern in the transparent sapphire silicon wafer of 2 inches of bottom end surface by following the trail of autofocus, being directed to, the LED scoring system is the traceable variation of 5～10 microns on silicon wafer thickness.Be directed to this and use, the frequency range of servo loop is～5Hz.Because this frequency range, the local height variation is to be left in the basket and to make this system more strong fast.Change from different apparent height for faster x/y platform speed, but therefore optimization and obtain optimum of servo loop.
For being familiar with this technology personage, will become is apparent that: can apply the details of many change the above embodiment of the present invention and not break away from its cardinal principle.Therefore, category of the present invention should only be determined by appended claims.
Claims (14)
1. modification method that be used for to quantize relative displacement between laser processing system laser spot and workpiece, this laser processing system comprises the work laser with a focus; Reach one and measure laser, this measurement laser is to produce one to measure laser beam; And a laser beam detector, this measurement laser beam and this laser beam detector are to operate to quantize the displacement between this laser spot and this workpiece, and this workpiece comprises a top end surface and a bottom end surface, and this improvement comprises:
Set polarised direction to the polarization pattern and the orientation that is relevant to this workpiece top end surface of this measurement laser beam; And
Point to this measurement laser beam to this workpiece with a glancing angle, selected this glancing angle is to form an oval spot on this top end surface of this workpiece, wherein set this polarised direction and selected this glancing angle, make the most laser beam energy in this measurement laser beam reflect and be detected by this laser beam detector subsequently from this workpiece top end surface;
Wherein, this work laser and this measurement laser operate in different wave length; And
Wherein, when this workpiece is to be relevant to this laser spot to move, this measurement laser beam and this laser beam detector are the relative displacements that quantizes between this laser spot and this workpiece.
2. the method for claim 1, is characterized in that, this polarization pattern of this laser beam is that essence is linear.
3. the method for claim 1, is characterized in that, this orientation of this laser beam is the s polarization with respect to this top end surface essence of this workpiece.
4. the method for claim 1, is characterized in that, this glancing angle be with respect to a vertical line of this top end surface of this workpiece between 84 degree are spent with 87.
5. the method for claim 1, is characterized in that, this moves is greater than 10 mm/second (mm/s) and less than 1000 mm/second (mm/s).
6. the method for claim 1, is characterized in that, this measurement laser operates in the following wavelength of 700 nanometers (nm).
7. the method for claim 1, is characterized in that, before this measurement laser beam was reflected, this measurement laser beam was collimated and by a pinhole aperture.
8. the method for claim 1, is characterized in that, after this measurement laser beam was reflected, this measured laser beam by bandpass filtering.
9. improved equipment that be used for to quantize relative displacement between laser processing system laser spot and workpiece, this laser processing system comprises a work laser, this work laser comprises a laser spot; One measures laser, and this measurement laser is to produce one to measure laser beam; Measure laser optics device and a laser beam detector, this measurement laser beam, measurement laser optics device and this laser beam detector are that running is to quantize the displacement between this laser spot and this workpiece, this workpiece comprises a top end surface and a bottom end surface, and improvement comprises:
This measurement laser is that running is left this workpiece by reflection and detected by this laser beam detector to point to this measurement laser beam with measuring the laser optics device, therefore and quantize the relative displacement between this laser spot and this workpiece, this measurements laser beam has and polarizes and this laser beam is sensing to clash into this top end surface of this workpiece for the orientation of this top end surface of this workpiece;
This measurement laser beam is and then points to this workpiece with a glancing angle, select this glancing angle to form an oval spot on this top end surface of this workpiece, wherein set this polarization and this orientation and selected this glancing angle, make the most laser beam energy in this measurement laser beam reflect and be detected by this laser beam detector subsequently from this top end surface of this workpiece;
Wherein, this work laser and this measurement laser are to operate in different wave length; And
Wherein, when this workpiece is to move with respect to this laser spot, this laser beam is to point to leave this workpiece with reflection, therefore quantizes this relative displacement between this laser spot and this workpiece.
10. equipment as claimed in claim 9, is characterized in that, this polarization pattern of this laser beam is that essence is linear.
11. equipment as claimed in claim 9 is characterized in that, this orientation is that this top end surface essence with respect to this workpiece is the s polarization.
12. equipment as claimed in claim 9 is characterized in that, this glancing angle be with respect to a vertical line of this top end surface of this workpiece between 84 degree are spent with 87.
13. equipment as claimed in claim 9 is characterized in that, this moves is to be positioned between 10 mm/second (mm/s) and 1000 mm/second (mm/s).
14. equipment as claimed in claim 9 is characterized in that, this measurement laser operates in the following wavelength of 700 nanometers (nm).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4042008P | 2008-03-28 | 2008-03-28 | |
| US61/040,420 | 2008-03-28 | ||
| PCT/US2009/038122 WO2009120706A2 (en) | 2008-03-28 | 2009-03-24 | Autofocus method and apparatus for wafer scribing |
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| Publication Number | Publication Date |
|---|---|
| CN101983420A CN101983420A (en) | 2011-03-02 |
| CN101983420B true CN101983420B (en) | 2013-06-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009801112711A Expired - Fee Related CN101983420B (en) | 2008-03-28 | 2009-03-24 | Autofocus method and apparatus for wafer scribing |
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| Country | Link |
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| JP (1) | JP2011517428A (en) |
| KR (1) | KR101666462B1 (en) |
| CN (1) | CN101983420B (en) |
| TW (1) | TWI447468B (en) |
| WO (1) | WO2009120706A2 (en) |
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| CN102259234A (en) * | 2010-05-26 | 2011-11-30 | Ntn株式会社 | Laser Patterning Device And Laser Patterning Method |
| KR20120019649A (en) * | 2010-08-26 | 2012-03-07 | 삼성엘이디 주식회사 | Apprartus and method for laser scribing |
| CN103217098B (en) * | 2012-01-19 | 2017-05-03 | 昆山思拓机器有限公司 | Focus finding method for multi-spectral photoelectrical focus finding device |
| CN103212908A (en) * | 2012-01-19 | 2013-07-24 | 昆山思拓机器有限公司 | Calibration method for dead-center position of laser spray nozzle |
| CN103955108A (en) * | 2014-05-15 | 2014-07-30 | 中国工程物理研究院激光聚变研究中心 | Multiple-energy-point spectrum resolution soft-X-ray framing imaging system |
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| CN101116928A (en) * | 2006-08-04 | 2008-02-06 | 株式会社迪思科 | Laser beam irradiation apparatus and laser working machine |
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| US5117254A (en) * | 1988-05-13 | 1992-05-26 | Canon Kabushiki Kaisha | Projection exposure apparatus |
| JP2886957B2 (en) * | 1990-09-06 | 1999-04-26 | キヤノン株式会社 | Automatic focusing device |
| JPH06297175A (en) * | 1993-04-15 | 1994-10-25 | Nippon Steel Corp | Gap sensor for laser beam machine |
| JP3555230B2 (en) * | 1994-05-18 | 2004-08-18 | 株式会社ニコン | Projection exposure equipment |
| US6031615A (en) * | 1997-09-22 | 2000-02-29 | Candela Instruments | System and method for simultaneously measuring lubricant thickness and degradation, thin film thickness and wear, and surface roughness |
| JP2000230802A (en) * | 1999-02-10 | 2000-08-22 | Anritsu Corp | Displacement measuring instrument |
| JP4555092B2 (en) * | 2005-01-05 | 2010-09-29 | 株式会社ディスコ | Laser processing equipment |
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| CN101116928A (en) * | 2006-08-04 | 2008-02-06 | 株式会社迪思科 | Laser beam irradiation apparatus and laser working machine |
Also Published As
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|---|---|
| KR101666462B1 (en) | 2016-10-14 |
| TW200951530A (en) | 2009-12-16 |
| KR20110010693A (en) | 2011-02-07 |
| JP2011517428A (en) | 2011-06-09 |
| WO2009120706A2 (en) | 2009-10-01 |
| TWI447468B (en) | 2014-08-01 |
| WO2009120706A3 (en) | 2010-02-18 |
| CN101983420A (en) | 2011-03-02 |
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