CN101969020B - 沉积设备和使用沉积设备制造半导体装置的方法 - Google Patents

沉积设备和使用沉积设备制造半导体装置的方法 Download PDF

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CN101969020B
CN101969020B CN2010102412347A CN201010241234A CN101969020B CN 101969020 B CN101969020 B CN 101969020B CN 2010102412347 A CN2010102412347 A CN 2010102412347A CN 201010241234 A CN201010241234 A CN 201010241234A CN 101969020 B CN101969020 B CN 101969020B
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supply
feeding unit
gas
source
reacting gas
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CN101969020A (zh
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权永秀
罗敬弼
玄锡宗
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Lap Yi Cmi Holdings Ltd
Wonik IPS Co Ltd
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YUANYI IPS CORP
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Abstract

本发明提供一种沉积设备和一种制造半导体装置的方法。在所述方法中，准备具备气体源供应单元和液体源供应单元的反应腔室，且通过使用气体源在衬底上形成蚀刻停止层。随后，通过使用经汽化液体源和经汽化掺杂剂源在蚀刻停止层上形成层间绝缘层。以此方式，蚀刻停止层和层间绝缘层在同一反应腔室中在原位形成。

Description

沉积设备和使用沉积设备制造半导体装置的方法
技术领域
本发明涉及一种沉积设备和使用所述沉积设备制造半导体装置的方法。更特定来说，本发明涉及其中可通过使用气体源和液体源在原位形成不同层的沉积设备以及制造半导体装置的方法。
背景技术
随着新近的半导体装置高度集成且以高速操作，在半导体装置中使用精细且多层的互连。另外，铜用作互连材料，且具有低介电常数(dielectricconstant，k)的材料用作绝缘层材料以便减少RC信号延迟。而且，由缩减设计规则带来的金属图案化中的难题已导致镶嵌过程(damasceneprocess)的开发，其中在互连形成过程中不执行金属蚀刻(metal etching)和绝缘层间隙填充(insulation layer gap filling)。
在镶嵌过程中，在上面形成预定结构的衬底上形成蚀刻停止层(etchstop layer)和层间绝缘层(interlayer insulation layer)，且蚀刻层间绝缘层的预定区，直到暴露蚀刻停止层为止。随后，蚀刻暴露的蚀刻停止层以形成孔(hole)或沟槽(trench)。随后，用金属层填充孔或沟槽以形成金属互连(metal interconnection)。此时，蚀刻停止层由蚀刻速率与用于形成层间绝缘层的材料的蚀刻速率不同的材料形成。举例来说，层间绝缘层可由氧化硅形成，且蚀刻停止层可由氮化硅(SiN)形成。
在此情况下，通过使用气体源(gaseous source)形成例如氮化硅层等蚀刻停止层，且通过使用液体源(liquid source)形成层间绝缘层。因此，必须在不同的沉积设备(deposition apparatus)：气体源沉积设备和液体源沉积设备中形成蚀刻停止层和层间绝缘层。然而，在此情况下，装备可能不会有用地且兼容地操作，且装备的生产力可能降低。
发明内容
本发明提供一种沉积设备，其中可通过使用气体源和液体源在原位形成不同的层，且提供一种制造半导体装置的方法。
本发明还提供一种沉积设备，其中可通过分别使用气体源和液体源在原位形成蚀刻停止层和层间绝缘层，且提供一种制造半导体装置的方法。
根据示范性实施例，一种沉积设备包含：反应腔室，其中形成反应空间；衬底支撑件和喷淋头，其安置于所述反应腔室中以彼此面对；气体源供应单元，其连接到所述喷淋头以供应气体源；液体源供应单元，其经安装以与所述气体源供应单元分离，且连接到所述喷淋头以供应液体源；以及反应气体供应单元，其经安装以与所述气体源供应单元和所述液体源供应单元分离，且连接到所述喷淋头以供应反应气体。
所述气体源供应单元可包含连接到所述喷淋头的气体源供应管，且所述液体源供应单元可包含连接到所述喷淋头的液体源供应管，其中所述气体源供应管可安置于所述液体源供应管中。
所述沉积设备可进一步包含：第一等离子体产生单元，其安置于所述反应腔室的上部部分和侧面部分中的至少一处；以及第二等离子体产生单元，其连接到所述反应气体供应单元的一部分。
根据另一示范性实施例，提供一种通过使用沉积设备制造半导体装置的方法，在所述沉积设备中经配置以供应气体源的气体源供应单元、经配置以供应液体源和掺杂剂源的液体源供应单元以及经配置以供应反应气体的反应气体供应单元经安装以彼此分离且连接到其中形成反应空间的反应腔室，所述方法包含：通过使用所述气体源在衬底上形成蚀刻停止层；以及通过使所述液体源汽化、将所述经汽化液体源供应到所述反应腔室中且将所述掺杂剂源供应到所述反应腔室中而在所述蚀刻停止层上形成层间绝缘层，其中在所述反应腔室中在原位形成所述蚀刻停止层和所述层间绝缘层。
所述方法可进一步包含通过使用反应气体自由基和所述经汽化液体源在所述蚀刻停止层上形成衬料。
所述方法可进一步包含通过使用反应气体自由基和所述经汽化液体源或通过使用预处理过程而在所述衬底上形成衬料。
所述蚀刻停止层、所述衬料和所述层间绝缘层可在所述反应腔室中在原位形成。
根据又一示范性实施例，提供一种制造半导体装置的方法，所述方法包含：准备反应腔室，所述反应腔室具备气体源供应单元、液体源供应单元以及反应气体供应单元；将衬底装载到所述反应腔室中；通过从所述气体源供应单元供应气体源而在所述衬底上形成蚀刻停止层；在中断所述气体源的所述供应之后，从所述液体源供应单元供应经汽化液体源，且从所述反应气体供应单元供应反应气体，同时将电场施加于所述反应气体供应单元以产生反应气体自由基；通过将所述反应气体自由基和所述经汽化液体源引入所述反应腔室而在所述蚀刻停止层上形成衬料；以及通过在中断所述反应气体的所述供应和所述电场的所述施加时从所述液体源供应单元供应所述经汽化液体源和经汽化掺杂剂源而在所述衬料上形成层间绝缘层。
可使用连接到所述反应气体供应单元的等离子体产生单元来产生所述电场。
在所述层间绝缘层的所述形成之后，所述方法可进一步包含通过使用从所述反应气体供应单元供应的清洁气体从所述反应腔室移除未反应气体。
所述清洁气体可与所述反应气体相同。
附图说明
从以下结合附图做出的描述中可更详细地理解示范性实施例，在附图中：
图1是说明根据示范性实施例的沉积设备的示意性截面图。
图2是说明根据另一示范性实施例的沉积设备的示意性截面图。
图3是用于阐释根据示范性实施例的制造半导体装置的方法的流程图。
图4到图7是用于阐释半导体装置制造方法的截面图。
具体实施方式
下文中，将参考附图详细描述特定实施例。然而，本发明可以不同形式实施，且不应解释为限于本文陈述的实施例。事实上，提供这些实施例以使得本揭示内容将为详尽且完整的，且将本发明的范围完全传达给所属领域的技术人员。在图中，为了说明清楚起见而夸大层和区的尺寸。相同参考标号始终指代相同元件。还应了解，当将层、膜、区或板称为在另一者“上”时，其可直接在所述另一者上，或也可存在一个或一个以上介入的层、膜、区或板。此外，应了解，当将层、膜、区或板称为在另一者“下”时，其可直接在所述另一者下，且也可存在一个或一个以上介入的层、膜、区或板。另外，还应了解，当将层、膜、区或板称为在两个层、膜、区或板“之间”时，其可为所述两个层、膜、区或板之间的仅有的层、膜、区或板，或也可存在一个或一个以上介入的层、膜、区或板。
图1是说明根据示范性实施例的可用于制造半导体装置的方法的沉积设备的示意性截面图。举例来说，所述沉积设备是化学气相沉积(chemicalvapor deposition，CVD)设备，例如等离子体增强型CVD(plasma enhancedCVD，PECVD)设备。
参看图1，当前实施例的CVD设备包含：反应腔室(reaction chamber)100，其中形成反应空间(reaction space)；衬底支撑件(substrate support)110，其安置于反应腔室100的下部内侧中以支撑衬底10；喷淋头(showerhead)120，其安置于反应腔室100的上部内侧且面对衬底支撑件110以注射供应气体(supply gas)；气体源供应单元(gaseous source supply unit)130，其经配置以向喷淋头120供应气体源；液体源供应单元(liquid sourcesupply unit)140，其经配置以在使液体源汽化之后向喷淋头120供应液体源；第一等离子体产生单元(plasma generating unit)150，其经配置以激发气体源和液体源；反应气体供应单元(reaction gas supply unit)160，其经配置以向喷淋头120供应反应气体；以及第二等离子体产生单元170，其经配置以激发反应气体。
反应腔室100提供气密反应区(airtight reaction region)。反应腔室100可包含：反应部分，其由具有近似圆形形状的平坦部分和从平坦部分向上延伸以形成预定空间的侧壁部分构成；以及圆形盖(cover)，其具有近似圆形形状且安置于反应部分上以保持反应腔室100气密。反应部分和盖可具有其它形状，例如与衬底10的形状对应的形状。
衬底支撑件110安置于反应腔室100的下部侧以面对喷淋头120。举例来说，衬底支撑件110可包含静电卡盘(electrostatic chuck)以接纳载运到反应腔室100中的衬底10。衬底支撑件110可具有近似圆形形状或对应于衬底10的形状的任何其它形状。衬底支撑件110的大小可大于衬底10的大小。衬底升降机(elevator)111安置于衬底支撑件110下方以升高或降低放置于衬底支撑件110上的衬底10。如果衬底10放置于衬底支撑件110上，那么衬底升降机111将衬底10移动靠近喷淋头120。另外，加热器(heater)(未图示)安置于衬底支撑件110中。加热器加热衬底10，使得可通过沉积气体源和液体源在衬底10上容易地形成例如蚀刻停止层和层间绝缘层等层。除了加热器以外，冷却导管(cooling conduit)(未图示)也可安置于衬底支撑件110中。冷却剂可循环经过安置于衬底支撑件110中的冷却导管以通过在衬底10与衬底支撑件110之间的传导来冷却衬底10，以用于将衬底10的温度调整到所需水平。
喷淋头120安置于反应腔室100中的上部侧以面对衬底支撑件110而朝向反应腔室100的下部侧注射气体源、液体源和反应气体。喷淋头120的上部部分连接到气体源供应单元130、液体源供应单元140和反应气体供应单元160，且多个注射孔(injection hole)122形成于喷淋头120的底部侧中以注射源气体和反应气体。喷淋头120具有近似圆形形状或对应于衬底10的形状的任何其它形状。喷淋头120的大小可等于衬底支撑件110的大小。
气体源供应单元130包含：气体源供应管(gaseous source supply pipe)132，其连接到喷淋头120的上部部分以向喷淋头120供应气体源；以及气体源储存部分(gaseous source storing part)134，其经配置以储存气体源。气体源储存部分134储存用以形成例如氮化硅层等蚀刻停止层的源。举例来说，气体源储存部分134储存例如SiH4等硅源和例如NH3等氮源。因此，气体源储存部分134可包含硅源储存部分和氮源储存部分。举例来说，可将例如碳等掺杂剂添加到蚀刻停止层。在此情况下，可另外提供掺杂剂源储存部分(dopant source storing part)。
液体源供应单元140连接到喷淋头120的上部部分，且在使液体源汽化之后向喷淋头120供应液体源。液体源供应单元140可包含：液体源供应管(liquid source supply pipe)142，其与气体源供应管132分离，且经配置以向喷淋头120供应经汽化液体源；汽化器(vaporizer)144，其经配置以使液体源汽化；液体源储存部分146，其经配置以储存液体源；以及掺杂剂源储存部分148，其经配置以储存掺杂剂源。储存在液体源储存部分146中的液体源由汽化器144汽化，且经由液体源供应管142供应到喷淋头120。类似于液体源，储存在掺杂剂源储存部分148中的掺杂剂源经由汽化器144和液体源供应管142供应到喷淋头120，且随后经由喷淋头120注射。如果使用气体掺杂剂源，那么汽化器144可仅安置于液体源储存部分146的一侧以仅使液体源汽化。液体源储存部分146储存正硅酸乙酯(tetraethylorthosilicate，TEOS)和O2作为用于形成例如氧化硅(SiO2)层等层间绝缘层的主要源。为此，可将液体源储存部分146划分为TEOS储存部分和O2储存部分。在将掺杂剂添加到层间绝缘层(例如)以形成SiOCH层的情况下，掺杂剂源储存部分148为例如CH4等含碳源。类似于液体源储存部分146，掺杂剂源储存部分148可划分为多个储存部分以储存多种掺杂剂。液体源储存部分146和掺杂剂源储存部分148经由阀(未图示)连接到液体源供应管142以控制液体源和掺杂剂源的供应。
第一等离子体产生单元150经配置以将气体源和液体源激发到等离子体状态(plasma state)中。第一等离子体产生单元150包含：安置于反应腔室100的上部或侧面部分处的第一等离子体产生线圈(plasma generatingcoil)152或安置于反应腔室100的上部和侧面部分处的第一等离子体产生线圈152；以及第一电源部分(power supply part)154，其经配置以向第一等离子体产生线圈152供应功率。在第一等离子体产生线圈152安置于反应腔室100的上部和侧面部分处的情况下，第一等离子体产生线圈152可并联连接。安置于反应腔室100的上部部分处的第一等离子体产生线圈152可具有大于喷淋头120的外径，以便使经由喷淋头120注射的液体源和气体源完全离子化。
反应气体供应单元160包含：反应气体供应管(reaction gas supplypipe)162，其与气体源供应管132和液体源供应管142分离，且连接到喷淋头120的上部部分以向喷淋头120供应反应气体；以及反应气体储存部分(reaction gas storing part)164，其经配置以储存反应气体。反应气体储存部分164经配置以储存反应气体以用于在蚀刻停止层与层间绝缘层之间沉积衬料(liner)。举例来说，反应气体储存部分164储存例如NH3等含氮气体、例如CH4等含碳气体、惰性气体或其混合物。根据待储存的反应气体的数目，可提供多个反应气体储存部分164。另外，反应气体储存部分164可储存清洁气体(cleaning gas)以在沉积层间绝缘层之后净化未反应气体。例如惰性气体等气体可用作清洁气体。因此，如果例如含氮气体等惰性气体储存在反应气体储存部分164中，那么惰性气体可在沉积衬料时用作反应气体，且在沉积层间绝缘层之后用作清洁气体以净化未反应气体。
第二等离子体产生单元170经配置以通过将经由反应气体供应单元160供应的反应气体激发到等离子体状态中而产生自由基(radical)。第二等离子体产生单元170包含：第二等离子体产生线圈172，其安置于反应气体供应管162的预定部分处；以及第二电源部分174，其经配置以向第二等离子体产生线圈172供应功率。如果功率从第二电源部分174供应到第二等离子体产生线圈172，那么产生电场，且由电场将反应气体激发到等离子体状态中，使得可产生反应气体自由基。举例来说，如果NH3用作反应气体，那么产生氮自由基(N*)，且如果CH4用作反应气体，那么产生碳自由基(C*)。也就是说，可根据反应气体的种类产生各种自由基。此些反应气体自由基连同经汽化液体源一起经由喷淋头120注射，且通过经汽化液体源与反应气体自由基之间的反应而在衬底10上形成衬料。举例来说，如果供应经汽化TEOS和O2作为源且供应NH3作为反应气体，那么可沉积SiON衬料。另外，如果供应经汽化TEOS和O2作为源且供应CH4作为反应气体，那么可沉积SiOCH衬料。另外，如果供应经汽化TEOS和O2作为源且供应NH3和CH4作为反应气体，那么可沉积SiOCN衬料。也就是说，可根据反应气体的种类而沉积各种衬料。
图2是说明根据另一示范性实施例的沉积设备的示意性截面图。
参看图2，在当前实施例的沉积设备中，液体源供应管142具有比气体源供应管132的直径大的直径，且气体源供应管132安置于液体源供应管142中。
现在将参看图3到图7阐释通过使用上述CVD设备制造半导体装置的方法。图3是用于阐释根据示范性实施例的制造半导体装置的方法的流程图，且图4到图7是根据工序说明装置的截面图。
参看图3，当前实施例的半导体装置制造方法包含：操作S 110，其中将上面形成预定结构的衬底10装载到反应腔室100中；操作S120，其中从气体源供应单元130供应气体源以在衬底10上形成蚀刻停止层；操作S130，其中将反应气体激发到等离子体状态中以产生自由基，且供应经汽化液体源，以便在蚀刻停止层上形成衬料；以及操作S140，其中中断自由基和经汽化液体的供应，且供应掺杂剂源以在衬料上形成层间绝缘层。
参看图3的流程图和图4到图7的截面图，现在将更详细地阐释当前实施例的半导体装置制造方法。
S110：如图3和图4所示，将上面形成预定结构的衬底10装载到反应腔室100中。举例来说，可在衬底10上形成晶体管、位线和金属互连。在当前实施例中，在衬底10上形成示范性金属互连20。当将上面形成金属互连20的衬底10装载到反应腔室100中时，衬底10放置于衬底支撑件110上，且衬底升降机111向上移动以调整衬底支撑件110与喷淋头120之间的间隙。
S120：如图3和图5所示，通过使用安置于衬底支撑件110中的加热器使衬底10保持在预定温度，例如在从大约400℃到大约550℃的范围内，且将反应腔室100的内部保持在预定压力，例如真空压力。接下来，将储存在气体源储存部分134中的气体源(例如硅源和氮源)经由气体源供应管132供应到喷淋头120，且随后经由喷淋头120将气体源注射到衬底10。此时，通过第一等离子体产生单元150的操作产生等离子体。因此，在衬底10上形成例如氮化硅层等层作为蚀刻停止层30。
S130：如图3和图6所示，中断气体源从气体源供应单元130的供应。随后，从液体源供应单元140供应经汽化液体源，且在经由反应气体供应单元160供应反应气体时，反应气体由第二等离子体产生单元170激发以产生反应气体自由基。此时，在反应腔室100中由第一等离子体产生单元150产生等离子体。也就是说，从液体源供应单元140供应例如TEOS和O2等液体源，同时通过使用汽化器144使液体源汽化，且随后经由液体源供应管142将经汽化液体源供应到喷淋头120。与此同时，经由反应气体供应管162从反应气体储存部分164供应例如NH3等反应气体。此时，从第二电源部分174向第二等离子体产生线圈172供应功率以产生电场。因此，在反应气体供应管162中流动的反应气体被激发到等离子体状态中以产生氮自由基(N*)。因此，将氮自由基(N*)和经汽化液体源供应到喷淋头120，在喷淋头120处注射氮自由基(N*)和经汽化液体源(TEOS和O2)。随后，衬料40形成于蚀刻停止层30上。举例来说，可沉积SiON层作为衬料40，且衬料40的厚度可由氮自由基(N*)和经汽化液体源的供应量或时间决定。或者，如果将含碳气体用作反应气体，那么可沉积SiOCH层作为衬料40。或者，如果将含碳和氮的气体用作反应气体，那么可沉积SiOCN层作为衬料40。也就是说，可根据反应气体的种类沉积各种衬料40。用于衬料40的反应气体的种类可由用于形成层间绝缘层的液体源和掺杂剂源的种类决定，且由于自由基的使用，衬料40可具有较密集结构以防止杂质的渗透。
S140：参看图3和图7，中断反应气体从反应气体供应单元160的供应，且还中断来自第二电源部分174的电源。然而，将由汽化器144汽化的液体源连续供应到喷淋头120以注射经汽化液体源。此时，第一等离子体产生单元150也操作以在反应腔室100中产生等离子体。因此，在衬底10的衬料40上沉积层间绝缘层50。层间绝缘层50可为氧化硅层。如果必要，那么从掺杂剂源储存部分148供应掺杂剂源以更改层间绝缘层50。举例来说，可供应碳源作为掺杂剂源以形成SiOCH层作为层间绝缘层50。
在层间绝缘层50的沉积之后，净化反应腔室100中剩余的未反应气体。为此，中断液体源和掺杂剂源的供应，且从反应气体供应单元160供应例如NH3或惰性气体等气体作为清洁气体。
在上述实施例中，使用硅源和氮源以形成氮化硅层作为蚀刻停止层；使用TEOS和O2作为液体源且使用NH3作为反应气体以形成SiON层作为衬料；且使用TEOS和O2作为液体源以形成氧化硅层作为层间绝缘层。然而，本发明不限于此。也就是说，可使用各种源来形成各种蚀刻停止层、衬料和层间绝缘层。在此情况下，蚀刻停止层的种类可根据层间绝缘层的种类来确定，且因此用于衬料的材料可根据层间绝缘层和蚀刻停止层的种类来确定。
在上述实施例中，衬料形成于蚀刻停止层上。然而，衬料可在蚀刻停止层形成之前形成。衬料可通过使用如所描述的自由基或经由预处理而形成。
在上述实施例中，第二等离子体产生单元用以产生反应气体自由基。然而，可不使用第二等离子体产生单元。在此情况下，可通过第一等离子体产生单元在反应腔室中使反应气体离子化。
在上述实施例中，已在使用PECVD设备的情况下给出阐释。然而，本发明可应用于其它CVD设备，例如次大气压化学气相沉积(sub-atmospheric chemical vapor deposition，SACVD)设备。
如上所述，为反应腔室提供气体源供应单元和液体源供应单元两者，且在通过使用气体源在衬底上形成蚀刻停止层之后，通过使用经汽化液体和掺杂剂源在蚀刻停止层上形成层间绝缘层。
也就是说，可通过使用气体源和液体源在同一反应腔室中在原位形成蚀刻停止层和层间绝缘层。
因此，装备可有用地且兼容地操作，且生产力可得以改善。
虽然已参考特定实施例描述了沉积设备和半导体装置制造方法，但其不限于此。因此，所属领域的技术人员将容易了解，在不脱离权利要求书界定的本发明的精神和范围的情况下，可对其做出各种修改和改变。

Claims (11)

1.一种沉积设备，其特征在于，包括：
反应腔室，其中形成反应空间；
衬底支撑件，安置于所述反应腔室中，其用以支撑衬底；
喷淋头，安置于所述反应腔室中，其与所述衬底支撑件彼此面对；
气体源供应单元，其连接到所述喷淋头以供应气体源；
液体源供应单元，其经安装以与所述气体源供应单元分离，且连接到所述喷淋头以供应液体源；以及
反应气体供应单元，其用于向所述衬底提供沉积衬料的反应气体，所述衬料位于由所述气体源形成的蚀刻停止层和由所述液体源形成的层间绝缘层之间，并且，所述反应气体供应单元经安装以与所述气体源供应单元和所述液体源供应单元分离，且连接到所述喷淋头以供应反应气体。
2.根据权利要求1所述的沉积设备，其特征在于，所述气体源供应单元包括连接到所述喷淋头的气体源供应管，且所述液体源供应单元包括连接到所述喷淋头的液体源供应管，其中所述气体源供应管安置于所述液体源供应管中。
3.根据权利要求1所述的沉积设备，其特征在于，进一步包括：
第一等离子体产生单元，其安置于所述反应腔室的上部部分和侧面部分中的至少一处；以及
第二等离子体产生单元，其连接到所述反应气体供应单元的一部分。
4.一种通过使用沉积设备制造半导体装置的方法，在所述沉积设备中经配置以供应气体源的气体源供应单元、经配置以供应液体源和掺杂剂源的液体源供应单元以及经配置以供应反应气体的反应气体供应单元经安装以彼此分离且连接到其中形成反应空间的反应腔室，
所述方法包括：
通过使用所述气体源在衬底上形成蚀刻停止层；以及
通过使所述液体源汽化、将所述经汽化液体源供应到所述反应腔室中且将所述掺杂剂源供应到所述反应腔室中而在所述蚀刻停止层上形成层间绝缘层，
其特征在于，在所述反应腔室中在原位形成所述蚀刻停止层和所述层间绝缘层。
5.根据权利要求4所述的方法，其特征在于，进一步包括通过使用反应气体自由基和所述经汽化液体源在所述蚀刻停止层上形成衬料。
6.根据权利要求4所述的方法，其特征在于，进一步包括通过使用反应气体自由基和所述经汽化液体源或通过使用预处理过程而在所述衬底上形成衬料。
7.根据权利要求5或6所述的方法，其特征在于，在所述反应腔室中在原位形成所述蚀刻停止层、所述衬料和所述层间绝缘层。
8.一种制造半导体装置的方法，其特征在于，所述方法包括：
准备反应腔室，所述反应腔室具备气体源供应单元、液体源供应单元以及反应气体供应单元；
将衬底装载到所述反应腔室中；
通过从所述气体源供应单元供应气体源而在所述衬底上形成蚀刻停止层；
在中断所述气体源的所述供应之后，从所述液体源供应单元供应经汽化液体源，且从所述反应气体供应单元供应反应气体，同时将电场施加于所述反应气体供应单元以产生反应气体自由基；
通过将所述反应气体自由基和所述经汽化液体源引入所述反应腔室而在所述蚀刻停止层上形成衬料；以及
通过在中断所述反应气体的所述供应和所述电场的所述施加时从所述液体源供应单元供应所述经汽化液体源和经汽化掺杂剂源而在所述衬料上形成层间绝缘层。
9.根据权利要求8所述的方法，其特征在于，使用连接到所述反应气体供应单元的等离子体产生单元来产生所述电场。
10.根据权利要求8所述的方法，其特征在于，在所述层间绝缘层的所述形成之后，所述方法进一步包括通过使用从所述反应气体供应单元供应的清洁气体从所述反应腔室移除未反应气体。
11.根据权利要求10所述的方法，其特征在于，所述清洁气体与所述反应气体相同。
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