CN101964254A - Capacitor substrate structure - Google Patents
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- CN101964254A CN101964254A CN2009101651507A CN200910165150A CN101964254A CN 101964254 A CN101964254 A CN 101964254A CN 2009101651507 A CN2009101651507 A CN 2009101651507A CN 200910165150 A CN200910165150 A CN 200910165150A CN 101964254 A CN101964254 A CN 101964254A
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Abstract
The invention provides a capacitor substrate structure which can effectively solve the problems of high-leakage current and low insulation resistance of ultrahigh dielectric organic/inorganic blending substrate materials. An insulation layer arranged between two conductive layers is a multi-layer dielectric layer structure, wherein at least one dielectric layer is a high dielectric layer comprising mixture of high dielectric ceramic powder and conductive powder evenly dispersed in organic resin, and the other dielectric layers are ordinary organic resin and further comprise high dielectric ceramic powder. The insulation resistance of the capacitor substrate under the operation voltage is greater than 50K ohm and the leakage current is less than 100uAmp.
Description
[technical field]
The present invention relates to the capacity substrate structure, more especially about the composition of insulating barrier in this structure.
[background technology]
Recently the demand along with electronic product life-stylize and multifunction heightens, and makes that the soft electronic industry is flourish, and electronic product is also with hard product and soft combination of elements, to improve the function and the convenience of product.Electronic product also develops towards high-speed high frequency direction frivolous, flexible and the signal transmission, so the passive component of electric substrate (passive component) also significantly increases with active element (activecomponent) quantitative proportion, the development Embedded Passive Components Technology can reduce board area, improve element and use density, significantly improve the qualification rate and the reliability of product, become inexorable trend.The use amount maximum of capacity cell wherein, structural design and the material technology of developing high dielectric capacity substrate have been global hot issue.
The pure inorganic electric capacity of sputter (sputtering) formula or high temperature sintering formula (substrate) material, cost height not only, usually need special installation and palpus high-temperature process (＞800 ℃) processing procedure, therefore be difficult to be applied on printed circuit board (PCB) (PCB, the printed circuit board) processing procedure of tool low-cost advantage.Have only the organic/inorganic of use to blend together the printed circuit board (PCB) processing procedure that high dielectric material just has an opportunity to be applicable to low temperatureization at present.Because the DK value (dielectric constant, dielectric constant values) of resin/high-permitivity ceramics powder composite material system of present stage is difficult to reach more than 40, capacitance density is not high, and its application is limited; Have only and add the further DK of raising of conductivity powder ability value, yet the behavior of high leakage current appears in this type of material easily in practical application, significantly reduced its application to more than at least 45.
The application of capacity cell expands the application of all electronic products to, wherein be decoupling (Decoupling) electric capacity with nearly half, its capacitance demand mainly concentrates on 1nF～1 μ F, therefore with the built-in substrate of such capacity cell, certainly will can effectively reach the dress purpose that contracts.Present stage mainly is to be embedded in the substrate in this class component, but still has many problems to be overcome, encapsulation problem after burying in comprising and boring problem etc.For using the superelevation dielectric material directly to be made into the capacitive character substrate, though high temperature sintering type capacitance material can be reached high appearance value demand easily, processing temperature is up to 900 ℃, and the cost height, material is crisp and low with existing printed circuit board (PCB) process-compatible.The present invention will disclose the making that a class capacity substrate structural design and material prescription are realized the decoupling capacity substrate.
This several years imbedded capacitance technology come into question in a large number, the exploitation of flush type passive component technology progressively enters the product practical stage, but still the application of having only RF to hold, in fact still the space has greatly improved, also become the technical field that associated companies manufacturer in recent years actively strives for, the scene of letting a hundred schools contend has also appearred in the delivering of relevant patent.
Relevant patent mostly was greatly and disclosed capacitor manufacturing method, powder kind and prescription resin etc. present stage, there is no at reducing leakage current (Leakage Current) and structure and material prescription that have high-k and high capacitance density to inquire into.
US6657849B1 discloses the manufacture method of the embedded capacitance layer that is applied to printed circuit board (PCB), use the thin dielectric material of one deck to form embedded capacitance, its structure is respectively the metal foil layer/dielectric materials layer of conduction, metal foil layer/dielectric materials layer/the layers of reinforcement of conduction, the same structure base material forms the embedded capacitance material to pressing again in twos then, and it is identical composition to the dielectric material of pressing, wherein the function of layers of reinforcement is to reduce in processing procedure because of heat or change in size that chemical reaction caused, its advantage to the compacting journey is to avoid the existence in gap, and material system then is common ceramic powder, thermosetting polymer, thermoplastic polymer etc.In addition, the characteristic of US7413815B2 is the prepolymer that intermediate dielectric layer (enhancement layer) changes some polymer into, as PET, PEN, PVC, PPS, PI, PA, PA-PI etc., reaches the effect that board structure strengthens, and its medium thickness is about 1.5～10 μ m.
US 6905757B2 discloses the manufacture method of the embedded capacitance layer that is applied to printed circuit board (PCB), and emphasize that the two-sided copper facing with higher-strength approaches overlapping board, begun in its content to focus on that resin is formed and the characteristic and the ratio of powder, wherein must contain soluble polyamide macromolecule (solvent solublepolyamide resin polymer), its dielectric material can be individual layer (≤5 μ m) metal foil layer of pressing conduction again, or adopt the mode increase layer to repeat to be coated with the processing procedure of drying, uses target thickness that identical dielectric material the reaches demand metal foil layer that conducts electricity of pressing again.
Mention laminated board and the manufacture method thereof that is used to form capacitor layers among the Taiwan patent I 594811, its structure is respectively alumina layer/aluminium, the nickel of electrode copper layer/alumina barrier layer/modification, the binding metal layer/electrode copper layer of chromium composition, but can not adopt the printed circuit board (PCB) processing procedure to produce the capacitive character substrate.
Structure for multilayer dielectric layer, there had been company put forward it is applied on the electric capacity or IC insulating barrier in the IC in 1997 to 2008 successively always, comprise US 5688724 (1997), US 6270835B1 (2001), US 6953721B2 (2005), US 7217617B2 (2007), US 7323422B2 (2008) etc., purpose all is to improve because thickness is crossed the thin leakage problem that causes, and nearly all is to adopt semiconductor CVD processing procedure to make this (inorganic based material) component structure.
In sum, the advantage that still needs at present a kind of new capacitance structure and relevant components when improving leakage current, still can guarantee high-k.
[summary of the invention]
The invention provides a kind of capacity substrate structure, comprise insulating barrier, be located between two conductor layers; Wherein insulating barrier comprises first dielectric layer and second dielectric layer; The dielectric constant of second dielectric layer is greater than the dielectric constant of first dielectric layer; And second dielectric layer comprise the high dielectric ceramic powder that is dispersed in the organic resin and/or the mixture of conductive powder body.
[brief description of drawingsfig]
Fig. 1 is the capacity substrate structure of an embodiment of the present invention;
Fig. 2 is the capacity substrate structure of another execution mode of the present invention;
Fig. 3 is the perforation structure of the capacity substrate of an embodiment of the present invention; And
Fig. 4 is the perforation structure of the capacity substrate of another execution mode of the present invention.
[main element symbol description]
11～insulating barrier;
13～conductor layer;
30～capacity substrate;
31～dielectric material;
33～conductor;
35～air gap;
DK1～first dielectric layer;
DK2～second dielectric layer;
DK3 the 3rd dielectric layer.
[execution mode]
As shown in Figure 1, capacity substrate structure of the present invention comprises the insulating barrier 11 that is located between two conductor layers 13.The thickness of insulating barrier 11 is approximately between 3 μ m to 60 μ m.If insulating barrier 11 is blocked up, then capacitance density will be difficult to effective lifting; But if insulating barrier 11 is thin excessively, then with variation, and disintegration voltage also can descend dielectric layer to the tack of conductor layer.Insulating barrier 11 is divided into the first dielectric layer DK1 and has the second dielectric layer DK2 of high-k (at least greater than 45), and the dielectric constant of the second dielectric layer DK2 is higher than the first dielectric layer DK1.In an embodiment of the present invention, the first dielectric layer DK1 comprises organic resin.In another execution mode of the present invention, the first dielectric layer DK1 evenly is mixed in the organic resin by the high dielectric ceramic powder and makes; The second dielectric layer DK2 is that organic/inorganic blendes together material, and its composition comprises high dielectric ceramic powder and the conductive powder body that is dispersed in the organic resin.
Above-mentioned organic resin can be thermoplastic resin, thermosetting resin or their combination.Be applicable to that thermosetting resin of the present invention comprises epoxy resin, (methyl) acrylic acid (ester) resinoid, polyimide resin and/or phenolic resins.Epoxy resin can be bisphenol-A diglycidyl ether, tetra bromobisphenol A ether, cycloaliphatic epoxy resin (as, bicyclopentadiene epoxy resin), contain the epoxy resin of naphthalene, two phenylene epoxy resin, novolac epoxy resin or o-cresol formaldehyde epoxy resin.Thermosetting resin can be epoxy resin/poly-(phenylate) composition, epoxy resin/poly-(phenylate)/poly-(butadiene) composition or epoxy resin/(methyl) acrylic acid (ester) based resin composition.
Above-mentioned high dielectric ceramic powder accounts for the 5-95% of the gross weight of the first dielectric layer DK1 or the second dielectric layer DK2, if ratio is higher than 95%, then dielectric layer to the tack of the conductor layer or first dielectric layer with variation; But if ratio is lower than 5%, can't active balance dielectric constant values and disintegration voltage.The high dielectric ceramic powder can be BaTiO
3, Ba (Sr) TiO
3, SrTiO
3, ceramic powder such as NPO.In an embodiment of the present invention, ceramic powder can further be doped with one or more metal ions, for example, and calcium ion, magnesium ion, zirconium ion or bismuth ion etc.
Above-mentioned conductive powder body account for the second dielectric layer DK2 gross weight 0.01% to 20%.If the conductive powder body ratio is higher than 20%, then easily formation conducts but not dielectric layer; But if the conductive powder body ratio is lower than 0.01%, then the lifting to dielectric constant values does not have help.Conductive powder body can be conductive black, carbon nano-tube, metal, metal oxide or their combination.Above-mentioned conductive black comprises (carbon black that super-normal structure black, low structure carbon black, surface have carboxyl or hydroxyl) or their combination.
Wherein above-mentioned super-normal structure black is meant the carbon black that oil absorption is low, and low structure carbon black is meant the carbon black that oil absorption is high; The carbon black that the surface has carboxyl is meant that carbon blacksurface has carboxyl (Carboxyl Group,-COOH), the carbon black that the surface has hydroxyl is meant that carbon blacksurface has hydroxyl (Hydroxy Group,-OH), the carbon black that these super-normal structure blacks, low structure carbon black and surface have carboxyl or a hydroxyl all can be available from Degussa limited company (Degussa).
Above-mentioned metal comprises the alloy of Ni, Al, Ag, Cu, two or more these metals, or their combination.Above-mentioned metal oxide comprises Al
2O
3, ZnO, Zn (Al) O, SnO
2, In
2O
3, or their combination.
In the present invention, at first organic resin is dissolved in the appropriate solvent.Solvent can be common solvents such as DMF or toluene.As mentioned above, organic resin comprises epoxy resin and/or (methyl) acrylic acid (ester) resinoid.Then, add curing agent and catalyst and other additives, coat conductor layer such as copper clad laminate after evenly disperseing, remove solvent and promptly on conductor layer, form dielectric layer.After the conductor layer pressing with coating different dielectric layer, promptly form capacity substrate structure of the present invention.In addition, also can be on the dielectric layer of drying such as DK1 different dielectric layer such as the DK2 that forms of another layer of coating, with another conductive layer pressing, also can finish capacity substrate structure of the present invention again.Its insulation resistance is greater than 50K ohm under operating voltage for capacitive character baseplate material of the present invention, and leakage current is less than 100 μ Amp.
Above-mentioned curing agent can be diamine, two acid anhydride, phenol resin.Above-mentioned catalyst (for example can be boron trifluoride complex, boron trifluoride list ethylamine (Boron trifluoride mono-ethylamine, BF3-MEA), tertiary amine, metal hydroxides, monoepoxide or imidazoles (imidazole) are as 1-methylimidazole (1-methylimidzaole), 1, the 2-methylimidazole (1,2-dimethylimidazole), 2-heptadecyl imidazoles (2-heptadecylimidazole) or 2-ethyl 4-methylimidazole (2-ethyl-4-methylimiazol) etc.
Though the insulating barrier among Fig. 1 only is a double-decker, capacity substrate structure of the present invention can be the sandwich construction more than three layers, as shown in Figure 2.In Fig. 2, insulating barrier 11 is divided into the first dielectric layer DK1, the second dielectric layer DK2, reaches the 3rd dielectric layer DK3, and the dielectric constant of the second dielectric layer DK2 is higher than the first dielectric layer DK1 and the 3rd dielectric layer DK3.The composition of the 3rd dielectric layer DK3 can be identical with the first dielectric layer DK1, can be organic resin, or further contain the high dielectric ceramic powder.
Capacity substrate of the present invention can further contain perforation structure, shown in the 3rd and 4 figure.In Fig. 3, the interior ring in the perforation structure of capacity substrate 30 is a conductor 33, and outer shroud is a dielectric material 31, and wherein dielectric material 31 can adopt and the first dielectric layer DK1 same composition such as organic resin, or the even blending of high dielectric ceramic powder is in organic resin.In Fig. 4, conductor 33 centers of interior ring also comprise air gap 35.The capacity substrate that the present invention can further stack among a plurality of Fig. 1 and/or Fig. 2 forms the multi-layer capacity substrate, or with above-mentioned capacity substrate one or more are placed on arbitrarily in the general multilayer board, and use above-mentioned perforation structure and link the capacity substrate that stacks.Those skilled in the art certainly can be according to itself needing selection to run through fully or the part perforation structure, and general leading (leading to) hole of arranging in pairs or groups again links the electrical circuit of multilager base plate.
The present invention is above-mentioned to be become apparent with other purposes, feature and advantage in order to allow, and a plurality of embodiment cited below particularly cooperate appended diagram, are described in detail below:
[embodiment]
Embodiment 1
Following for the preparation flow of capacity substrate of the present invention.
Get bis phenol-a epoxy resins (bisphenol-Adiglycidyl the ether) (188EL of Different Weight as shown in table 1 respectively, Changchun resin company, Taiwan), tetrabormated bis phenol-a epoxy resins (tetrabromo bisphenol-A diglcidyl ether) (BEB-350, Changchun company, Taiwan), cycloaliphatic epoxy resin (cyclo aliphatic epoxy) (HP-7200, DIC, Japan), polyfunctional epoxy resin (Multifunctional epoxy), and the DMF of adding 10ml, be heated to 90 ℃～95 ℃ above-mentioned resin is dissolved fully.Get the diamines (diamino diphenyl sulfone of Different Weight as shown in table 1, Diaminodiphenyl sulfone, DDS, available from ACROS, the U.S.) as curing agent, and boron trifluoride list ethylamine (Boron trifluoride mono-ethylamine, BF3-MEA, available from ACROS, the U.S.) as catalyst, join in the above-mentioned epoxy resin solution.After curing agent and catalyst are dissolved in epoxy resin solution fully, add dispersant (polyester dispersants again; Uniqema, Britain) and reduce to room temperature, make it become resinoid bond (binder).The BaTiO that adds the Different Weight ratio to above-mentioned resinoid bond
3, SrTiO
3, or ceramic powder such as NPO, even with high-speed stirred, promptly form the high dielectric layer of the present invention mixed solution of (being called for short DK1).In addition, the high dielectric ceramic powder from the Different Weight ratio to the resinoid bond (binder) of said method preparation such as the BaTiO that add
3Or SrTiO
3, and conductive powder body such as carbon black, aluminum zinc oxide (Zn (Al) O, AZO), powder such as metallic aluminium even with high-speed stirred again, form the high dielectric layer of the present invention mixed solution of (being called for short DK2).
The mixed solution of DK1 is coated on the Copper Foil, and use (120 ℃ in baking oven, 15 minutes) remove solvent on the other hand with the state (B-Stage) of effective control B b stage resin b, the mixed solution of DK2 is coated on the Copper Foil, and use baking oven (120 ℃, 15 minutes) to remove the B-Stage of solvent with effective control resin.Then the Copper Foil that will contain DK1 with hot press (200 ℃, pressing 2.5 hours) carries out forming double-deck high dielectric material capacitance structure to pressing with the Copper Foil that contains DK2.Except said method, also the DK1 material can be coated on the Copper Foil, and be used baking oven (120 ℃, 15 minutes) to remove the B-Stage of solvent with effective control resin.After then the DK2 material directly being coated the DK1 coating layer, use baking oven (120 ℃, 15 minutes) to remove the B-Stage of solvent with effective control resin.With blank Copper Foil and the Copper Foil pressing that contains DK1 and DK2, promptly form double-deck high dielectric material capacitance structure with hot press (200 ℃, pressing 2.5 hours).Said method can be applicable to three layers of dielectric layer (DK1, DK2, and DK3), shown in embodiment 1-4.
Table one
After measuring the thickness of the physical characteristic of the capacitance structure of double-deck high dielectric material among the embodiment 1-1 to 1-9 and DK1/DK2/DK3 respectively, tabulation as shown in Table 2.The measurement standard of peel strength is IPC-650, and the operating voltage of insulation current and leakage current is 10V, and soldering resistance is to confirm whether plate bursting in 288 ℃/3min.
Table two
| Characteristic | Embodiment 1-7 | Embodiment 1-8 | Embodiment 1-9 |
| DK1 thickness (μ m) | 1 | 1.2 | 5 |
| DK2 thickness (μ m) | 15 | 19 | 20 |
| DK3 thickness (μ m) | 0 | 0 | 0 |
| Dielectric constant (1MHz) | 55.3 | 52.6 | 55.1 |
| Peel strength (lb/in) | 4.96 | 4.28 | 4.73 |
| Insulation resistance (Ω) | 1.3E+07 | 3.0E+07 | 1.7E+08 |
| Leakage current (A) | 7.7E-07 | 3.3E-07 | 5.9E-08 |
| Soldering resistance | OK | OK | OK |
Comparative example 1
Similar to Example 1, difference is that the high dielectric material capacitance structure in the comparative example 1 is individual layer but not bilayer.In the capacitance structure of comparative example 1, insulating barrier only contains the DK1 (comprising organic resin and high dielectric ceramic powder) or the DK2 (comprise organic resin, high dielectric ceramic powder, reach conductive powder body) of individual layer.Remaining mixing, be coated with, remove solvent, and step such as pressing all identical with embodiment 1.The composition and the weight ratio of comparative example 1 are all tabulated as shown in Table 3.
Table three
| Comparative example 1-1 | Comparative example 1-2 | |
| Bis phenol-a epoxy resins (g) | 9.15 | 9.10 |
| Tetrabormated bis phenol-a epoxy resins (g) | 5.50 | 5.50 |
| Cycloaliphatic epoxy resin (g) | 2.15 | 2.20 |
| Polyfunctional epoxy resin (g) | 1.80 | 1.82 |
| DDS(g) | 4.20 | 4.23 |
| BF3-MEA(g) | 0.07 | 0.07 |
| Dispersant (g) | 2.5 | 2.6 |
| BaTiO 3(g) | 110 | 110 |
| SrTiO 3(g) | 0 | 0 |
| Carbon black (g) | 1.60 | 0.8 |
Measure respectively comparative example 1-1, and 1-2 in after the physical characteristic and sample thickness of capacitance structure of individual layer high dielectric material, tabulate as shown in Table 4.The measurement standard of peel strength is IPC-650, and the operating voltage of insulation current and leakage current is 10V, and soldering resistance is to confirm whether plate bursting in 288 ℃/3min.
Table four
| Comparative example 1-1 | Comparative example 1-2 | |
| Thickness (μ m) | 20 | 20 |
| Dielectric constant (1MHz) | 402.3 | 80.5 |
| Peel strength (1b/in) | 5.3 | 5.5 |
| Insulation resistance (Ω) | ＜1.0E+2 | 2.9E+3 |
| Leakage current (A) | ＞1.0E-2 | 3.5E-3 |
| Soldering resistance | OK | OK |
As shown in Table 4, though its dielectric constant of comparative example 1-1 or 1-2 can reach 400 or 80, it is under operating voltage 10V, and leakage current is quite serious, and its insulation resistance is also very little.
On the other hand, use double-deck high dielectric layer structure among the embodiment 1, as embodiment 1-1 high dielectric DK1 layer and high dielectric DK2 layer are carried out double-deck stacking structure, or also can carry out the capacity substrate that double-deck application type becomes the high dielectric material double-decker.Embodiment 1-1 can still can reduce or keep leakage current by the design of double-decker when significantly promoting dielectric constant, and improves the insulated electro group of capacitance structure.The different varied in thickness of double-decker can influence it electrically as dielectric constant, leakage current and insulation resistance.With embodiment 1-2 is example, and ground floor DK1 thickness 9 μ m collocation second layer DK2 thickness 15 μ m can form the high dielectric capacity substrate of dielectric constant 83.9, and its insulated electro group can be controlled in 1.2E+05 Ω.
Claims (16)
1. capacity substrate structure comprises:
Insulating barrier, this insulating barrier are located between two conductor layers;
Wherein this insulating barrier comprises:
First dielectric layer and second dielectric layer;
The dielectric constant of this second dielectric layer is greater than the dielectric constant of this first dielectric layer; And
This second dielectric layer comprises that high dielectric ceramic powder and conductive powder body are dispersed in the mixture in the organic resin.
2. capacity substrate structure as claimed in claim 1, wherein this organic resin comprises thermosetting resin or thermoplastic resin.
3. capacity substrate structure as claimed in claim 1, wherein the particle diameter of this high dielectric ceramic powder and accounts for 5% to 95% of this second dielectric layer gross weight between 30nm to 2 μ m.
4. capacity substrate structure as claimed in claim 1, wherein this high dielectric ceramic powder comprises BaTiO
3, BaSrTiO
3, SrTiO
3, NPO or their combination.
5. capacity substrate structure as claimed in claim 1, wherein this high dielectric ceramic powder is doped with metal ion, and this metal ion comprises calcium ion, magnesium ion, zirconium ion or bismuth ion.
6. capacity substrate structure as claimed in claim 1, wherein the particle diameter of this conductive powder body and accounts for 0.01% to 20% of this second dielectric layer gross weight between 10nm to 2 μ m.
7. capacity substrate structure as claimed in claim 1, wherein this conductive powder body comprises conductive black, metal, metal oxide or their combination.
8. capacity substrate structure as claimed in claim 7, wherein this conductive black comprises that super-normal structure black, low structure carbon black, surface have carboxyl or the surface has the carbon black of hydroxyl or their combination.
9. capacity substrate structure as claimed in claim 7, wherein this metal comprises the alloy of Ni, Al, Ag, Cu, above-mentioned metal or their combination.
10. capacity substrate structure as claimed in claim 7, wherein this metal oxide comprises Al
2O
3, ZnO, Zn (Al) O, SnO
2, In
2O
3, or their combination.
11. capacity substrate structure as claimed in claim 1, wherein this first dielectric layer comprises organic resin.
12. capacity substrate structure as claimed in claim 1, wherein this first dielectric layer is that the even blending of high dielectric ceramic powder is in organic resin.
13. capacity substrate structure as claimed in claim 1, wherein this insulating barrier also comprises the 3rd dielectric layer, the 3rd dielectric layer comprises organic resin, this second dielectric layer is located between this first dielectric layer and the 3rd dielectric layer, and the dielectric constant of this second dielectric layer is greater than the dielectric constant of the 3rd dielectric layer.
14. capacity substrate structure as claimed in claim 1, wherein this insulating barrier also comprises the 3rd dielectric layer, the 3rd dielectric layer is that the even blending of high dielectric ceramic powder is in organic resin, this second dielectric layer is located between this first dielectric layer and the 3rd dielectric layer, and the dielectric constant of this second dielectric layer is greater than the dielectric constant of the 3rd dielectric layer.
15. capacity substrate structure as claimed in claim 1 comprises also and passing partly or the perforation structure of whole capacity substrate structures that this perforation structure comprises:
Interior ring, it is a conductor material; And
Outer shroud, it is a dielectric material;
Wherein this dielectric material comprises organic resin, or the even blending of high dielectric ceramic powder is in organic resin.
16. capacity substrate structure as claimed in claim 15, wherein this perforation structure also comprises the air gap that is arranged in this ring.
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Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0677402A (en) * | 1992-07-02 | 1994-03-18 | Natl Semiconductor Corp <Ns> | Dielectric structure for semiconductor device and its manufacture |
| US6657849B1 (en) * | 2000-08-24 | 2003-12-02 | Oak-Mitsui, Inc. | Formation of an embedded capacitor plane using a thin dielectric |
| CN1288756C (en) * | 2002-05-17 | 2006-12-06 | 台湾积体电路制造股份有限公司 | Metal capacitor having high dielectric constant and low current leakage |
| KR100586963B1 (en) * | 2004-05-04 | 2006-06-08 | 삼성전기주식회사 | Composition for Forming Dielectric, Capacitor Prepared Therefrom and Printed Circuit Board Comprising The same |
| CN1908063A (en) * | 2005-08-01 | 2007-02-07 | 财团法人工业技术研究院 | High dielectric organic/inorganic blending material composition with flexibility and high heat endurance and hardening material thereof |
| US20070108490A1 (en) * | 2005-11-14 | 2007-05-17 | General Electric Company | Film capacitors with improved dielectric properties |
| CN102693975B (en) * | 2007-12-28 | 2015-09-16 | 财团法人工业技术研究院 | Composite capacitor |
-
2009
- 2009-07-23 CN CN 200910165150 patent/CN101964254B/en not_active Expired - Fee Related
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| CN103350542B (en) * | 2013-07-19 | 2016-01-20 | 广东生益科技股份有限公司 | One buries capacity materials, preparation method and its usage |
| CN103395243B (en) * | 2013-07-19 | 2016-06-08 | 广东生益科技股份有限公司 | One buries capacity materials, preparation method and its usage |
| CN106952896A (en) * | 2017-04-07 | 2017-07-14 | 上海莱狮半导体科技有限公司 | A kind of electric capacity and a kind of Switching Power Supply AC DC circuits |
| CN110136959A (en) * | 2018-02-08 | 2019-08-16 | 三星电机株式会社 | Capacitor assembly and the method for manufacturing the capacitor assembly |
| CN110070991A (en) * | 2018-09-25 | 2019-07-30 | 南方科技大学 | All-polymer layer composite material and its preparation method and application |
| CN110783103A (en) * | 2019-10-30 | 2020-02-11 | 内蒙古大学 | Dielectric film and method for producing the same |
| CN110783103B (en) * | 2019-10-30 | 2021-07-09 | 内蒙古大学 | Dielectric film and method for producing the same |
| CN115246983A (en) * | 2022-07-25 | 2022-10-28 | 华南理工大学 | Composite dielectric material, preparation method thereof and application thereof in capacitor |
| CN115246983B (en) * | 2022-07-25 | 2024-04-02 | 华南理工大学 | Composite dielectric material, preparation method thereof and application of composite dielectric material in capacitor |
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