CN1288756C - Metal capacitor having high dielectric constant and low current leakage - Google Patents
Metal capacitor having high dielectric constant and low current leakage Download PDFInfo
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- CN1288756C CN1288756C CN 02120269 CN02120269A CN1288756C CN 1288756 C CN1288756 C CN 1288756C CN 02120269 CN02120269 CN 02120269 CN 02120269 A CN02120269 A CN 02120269A CN 1288756 C CN1288756 C CN 1288756C
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- dielectric layer
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Abstract
The present invention relates to a metal capacitor with characteristics of high dielectric constant and low current leakage. A metal capacitor which is positioned on a substrate at least comprises a first metal layer, a first dielectric layer with high energy gap characteristic, a second dielectric layer with high dielectric constant, a third dielectric layer with high energy gap characteristic and a second metal layer from the substrate to top orderly.
Description
Technical field
The invention relates to a kind of semiconductor element, and particularly relevant for a kind of metal capacitor with high-k and low leakage characteristic that can be applicable to semiconductor subassembly.
Background technology
Under the increasing trend of semiconductor integrated level, make the semiconductor industry ceaselessly produce the littler element of size, to deal with the demand of time micron technology in the development new method.In the past, if will increase the density of integrated circuit component, must manage to reduce the size of each circuit element structure.With regard to DRAM (Dynamic Random Access Memory) (Dynamic Random Access Memory; DRAM) or the mixed-signal of analog/digital (mixed signal) circuit, in order to dwindle the occupied area of its capacitor, the size that must dwindle capacitor, but also reduced the amounts of stored charge of capacitor simultaneously.
But if if the storage electric weight of capacitor is too little, then the signal that is provided will be unstable, therefore must try every possible means to increase the storage electric weight of capacitor again.Be directly proportional because the electric capacity of capacitor is the dielectric constant with capacitor dielectric, therefore using the dielectric material with high-k to be used as capacitor dielectric just becomes general demand.But the dielectric material that generally has high-k, the energy gap (band gap) of (conductive band) is generally all big inadequately to the conduction band for its valence band (valence band), the just about 3-5eV of the energy gap of tantalum oxide (dielectric constant is about 20-25) for example, therefore be easy to just cause the problem of leakage current, make the storage electric weight of capacitor to keep long period of time because of the mechanism of hot ionization radiation (thermionic emission).
And tradition silicon oxide dielectric material commonly used, (about 8.8eV) is bigger for its edge energy, makes its leakage current less, but its dielectric constant ability about 4.Therefore if in the semiconductor technology of deep-sub-micrometer, to enter in 0.13 micron the technology by 0.18 micron especially at present, use silica and make capacitor and can't reduce the required area that occupies of capacitor effectively.
Summary of the invention
Therefore the objective of the invention is a kind of metal capacitor and its manufacture method that has high-k and low leakage characteristic concurrently is being provided.
According to above-mentioned purpose of the present invention, a kind of metal capacitor and its manufacture method with high-k and low leakage characteristic proposed.Be positioned at suprabasil this metal capacitor, up include the first metal layer in regular turn at least, have first dielectric layer of high energy gap characteristic, second dielectric layer, the 3rd dielectric layer and second metal level with high energy gap characteristic with high-k from substrate.
According to an embodiment of the present invention, the first metal layer and second metal level for example can be with the formed titanium nitride layer of reactive sputtering method, and first dielectric layer and the 3rd dielectric layer for example can be with the formed silicon oxide layer of chemical vapour deposition technique or with the formed alumina layer of reactive sputtering method.And second dielectric layer for example can be Ta
2O
5, Si
3N
4, TiO
2, ZrO
2, HfO
2, PZT (lead zirconate titanate) or BST materials such as (barium strontium titanate) dielectric layer.
Another object of the present invention is that a kind of metal capacitor and its manufacture method that is applied in mixed-signal semiconductor element (mixed signal devices) is being provided.This metal capacitor not only has high-k and low leakage characteristic, and has the capacitance-voltage relation of approximately linear.
According to above-mentioned purpose of the present invention, a kind of metal capacitor that is applied in the mixed-signal semiconductor element is proposed, this metal capacitor has high-k and low leakage characteristic.At suprabasil this metal device container, the first metal layer is arranged from the bottom to top in regular turn, have first dielectric layer of high energy gap characteristic, the multiple layer of second dielectric, the 3rd dielectric layer and second metal level with high energy gap characteristic with high-k.Wherein the combination of the multiple layer of second dielectric material is enough to make the capacitance-voltage of this capacitor to close to be approximately linear.
According to another execution mode of the present invention, the first metal layer and second metal level for example can be with the formed titanium nitride layer of reactive sputtering method, and first dielectric layer and the 3rd dielectric layer for example can be with the formed silicon oxide layer of chemical vapour deposition technique or with the formed alumina layer of reactive sputtering method.And each layer material of the multiple layer of second dielectric for example can be respectively Ta
2O
5, Si
3N
4, TiO
2, ZrO
2, HfO
2, material such as PZT or BST dielectric layer.
As mentioned above, the present invention is because will have first dielectric layer of high energy gap contacts with second metal level with the first metal layer of capacitor respectively with the 3rd dielectric layer, so can reduce the leakage current that is caused because of hot ionization radiation.Yet second dielectric layer or second dielectric that will have high-k again are placed between first dielectric layer and the 3rd dielectric layer again, thus still can keep the high-k characteristic of the multiple layer of whole dielectric, to meet the required of integrated level integrated circuit.
Description of drawings
Figure 1A-1C is a kind of manufacturing process profile that has the metal capacitor of high-k and low leakage characteristic concurrently according to one embodiment of the invention.
Fig. 2 A-2C is a kind of manufacturing process profile that is applied in the metal capacitor of mixed-signal semiconductor element according to another embodiment of the present invention.
Description of reference numerals:
100,200: substrate
110,210: bottom electrode
120,220: the first dielectric layers
130: the second dielectric layers
140,240: the three dielectric layers
150,250: top electrode
230: the second multiple layers of dielectric
Embodiment
The present invention allows two-layer dielectric layer with high energy gap directly directly contact with the upper and lower metal electrode board of metal capacitor, to reduce the leakage current that is caused because of hot ionization radiation (thermionic emission).The dielectric layer that will have high-k again places between the two-layer dielectric layer with high energy gap, to increase the high-capacitance of metal capacitor.
Embodiment one
Please refer to Figure 1A-1C, it is a kind of manufacturing process profile that has the metal capacitor of high-k and low leakage characteristic concurrently according to one embodiment of the invention.
Please refer to Figure 1A, in substrate 100, form the first metal layer 110, as the bottom electrode of metal capacitor.The material of the first metal layer 110 for example can be titanium nitride, and its formation method for example can be reactive sputtering method (reactive sputtering).
And then in first dielectric layer 120 that formation has high energy gap of going up of the first metal layer 110.The material of first dielectric layer 120 for example can be silica (dielectric constant is about 4) or aluminium oxide (dielectric constant is about 9), wherein the energy gap of (conductive band) is about 9eV to the valence band of silica (valence band) to the conduction band, and the energy gap of aluminium oxide is about 8.8eV, all is the bigger dielectric material of energy gap.The formation method of first dielectric layer 120, select can be with the formation method of the first metal layer 110 oxidations, in order to avoid influence its conductivity.The formation method of first dielectric layer 120 for example can be plasma enhanced chemical vapor deposition method (plasma enhanced chemical vapordeposition; PECVD) or lower high density plasma CVD method (the high-density plasma CVD of power; HDPCVD).And the thickness of first dielectric layer 110 can be between the 5-50 dust.
Please refer to Figure 1B, then on first dielectric layer 120, form second dielectric layer 130 with high-k.The material of second dielectric layer 130 for example can be Ta
2O
5, Si
3N
4, TiO
2, ZrO
2, HfO
2, lead zirconate titanate (PbZr
1-xTi
xO
3Lead zirconate titanate; PZT) or barium strontium titanate (barium strontium titanate; BST) etc., its thickness is about the 50-800 dust.
After forming second dielectric layer, can optionally carry out some reprocessings.For example rapid thermal treatment method (rapid thermal process can used; RTP) or under the situation of using boiler tube (furnace) to heat feed nitrogenous or oxygen containing gas (O
2, N
2, N
2O, NH
3Deng), or the plasma that feeds nitrogenous or oxygen-containing gas reduces impurity in second dielectric layer 130 (as carbon, hydrogen, chlorine ... Deng) and allow second dielectric layer 130 carry out tempering so that the lattice structure of microcosmic is more complete, to reduce the generation of leakage current.
Please refer to Fig. 1 C, on second dielectric layer 130, then form the 3rd dielectric layer 140 with high energy gap.The same with first dielectric layer 120, its material for example can be silica or aluminium oxide, and its thickness can be between the 5-50 dust.On the 3rd dielectric layer 140, form second metal level 150 at last again, as the top electrode of metal capacitor.The material of second metal level 150 can be the same with the first metal layer 110 materials, for example can be titanium nitride.
By the capacitor that the first metal layer 110/ first dielectric layer 120/ second dielectric layer 130/ the 3rd dielectric layer 140/ second metal level 150 is formed, its equivalent capacity can below formula (1) calculate:
So as if the metal capacitor with the tantalum oxide that silica/100 dusts are thick/silica/titanium nitride that 25 dusts are thick that titanium nitride/25 dusts are thick, the equivalent capacity of its gained is about 5 times of the thick silica of titanium nitride/380 dusts/titanium nitride electric capacity.So application the present invention not only can have better controlled to the leakage current of metal capacitor, can obtain higher equivalent capacity again.
Embodiment two
Please refer to Fig. 2 A-2C, it is a kind of manufacturing process profile that is applied in the metal capacitor of mixed-signal semiconductor element according to another embodiment of the present invention.
Please refer to Fig. 2 A, in substrate 200, form the first metal layer 210, as the bottom electrode of metal capacitor.The material of the first metal layer 210 for example can be titanium nitride, and its formation method for example can be reactive sputtering method (reactive sputtering).
And then in first dielectric layer 220 that formation has high energy gap of going up of the first metal layer 210.The material of first dielectric layer 220 for example can be silica or aluminium oxide, all is the bigger dielectric material of energy gap.The formation method of first dielectric layer 220 and embodiment one similarly will select can be with the formation method of the first metal layer 210 oxidations, in order to avoid influence its conductivity.So the formation method of first dielectric layer 220 for example can be plasma enhanced chemical vapor deposition method or the lower high density plasma CVD method of power.And the thickness of first dielectric layer 210 can be between the 5-50 dust.
Please refer to Fig. 2 B, then on first dielectric layer 220, form the multiple layer 230 of second dielectric.The multiple layer 230 of second dielectric is folded mutually the forming of dielectric layer that had high-k by multilayer, and the material of each layer dielectric layer for example can be respectively Ta
2O
5, Si
3N
4, TiO
2, ZrO
2, HfO
2, PZT or BST etc., come superimposition all can according to required with various order.
Behind each layer dielectric layer that forms the multiple layer 230 of second dielectric, can optionally carry out some reprocessings.For example can under the situation of using the rapid thermal treatment method or using boiler tube to heat, feed nitrogenous or oxygen containing gas (O
2, N
2, N
2O, NH
3Deng), or the plasma that feeds nitrogenous or oxygen-containing gas reduces the impurity of each layer dielectric layer in the multiple layer 230 of second dielectric (as carbon, hydrogen, chlorine ... Deng) and allow multiple layer 230 interior each layer dielectric layer of second dielectric carry out tempering so that the lattice structure of microcosmic is more complete, to reduce the generation of leakage current.
Please refer to Fig. 2 C, on second dielectric layer 230, then form the 3rd dielectric layer 240 with high energy gap.The same with first dielectric layer 220, its material for example can be silica or aluminium oxide, and its thickness can be between the 5-50 dust.Last again in upward formation second metal level 250 of the 3rd dielectric layer 240, as the top electrode of metal capacitor.The material of second metal level 250 can be the same with the first metal layer material 210, for example can be titanium nitride.
Because applied capacitor on hybrid circuit, desirable situation is for wishing under different voltages, the size of its electric capacity can be kept constant, or both are linear relation at least, so that can be easier to predict the behavior of capacitor when carrying out circuit design and practical operation.So, preferably can make the metal capacitor that combines that the linear behavior of capacitance-voltage can be arranged in the number of plies of the multiple layer 230 of the second above-mentioned dielectric and the selection and the combination of dielectric material.
In general, the relation of the electric capacity of capacitor (C) and voltage (V) can below formula (2) represent:
C(V)＝C
0+C
1V+C
2V
2+Λ (2)
If the dielectric layer of capacitor is combined by multilayer, then the relational expression of its approximate equivalent capacity and voltage can following formula (3) be represented:
So if the electric capacity of wishing capacitor is linear with the voltage energy, the V that is combined into then
2Preceding coefficient
Numerical value preferably levels off to zero (＜50ppm/V
2).Ideally, preferably connect
Numerical value also very little, then the electric capacity of this capacitor can be considered as all can keeping definite value under the operating voltage quite on a large scale.
By the invention described above embodiment as can be known, using the present invention not only can allow metal capacitor obtain the control of good leakage current, and can take into account the demand of the capacitor dielectric of high-k in deep-sub-micrometer technology again, make that the present invention is potential to can be applicable in 0.13 micron the semiconductor technology.The present invention simultaneously also provides electric capacity that a kind of method can adjust metal capacitor and the relation between voltage, makes it can be linear, in order to design of hybrid circuits.
Though the present invention with embodiment explanation as above; right its is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is when being as the criterion with claims.
Claims (7)
1. metal capacitor with high-k and low leakage characteristic, it is characterized by: this metal capacitor comprises at least:
One the first metal layer is positioned in the substrate;
One first dielectric layer with high energy gap characteristic is positioned on this metal level, and this first dielectric layer is an alumina layer;
One second dielectric layer with high-k is positioned on this first dielectric layer, and the material of this second dielectric layer is to be selected from by Ta
2O
5, TiO
2, ZrO
2, HfO
2, the group that forms of lead zirconate titanate and barium strontium titanate;
One the 3rd dielectric layer with high energy gap characteristic is positioned on this second dielectric layer, and the 3rd dielectric layer is an alumina layer; And
One second metal level is positioned on the 3rd dielectric layer.
2. the metal capacitor with high-k and low leakage characteristic as claimed in claim 1 is characterized by: this first metal layer and this second metal level comprise the titanium nitride layer at least.
3. the metal capacitor with high-k and low leakage characteristic as claimed in claim 1 is characterized by: the thickness of this first dielectric layer and the 3rd dielectric layer is between the 5-50 dust.
4. the metal capacitor with high-k and low leakage characteristic as claimed in claim 1 is characterized by: the thickness of this second dielectric layer is the 50-800 dust.
5. metal capacitor that is applied in the mixed-signal semiconductor element, this metal capacitor has high-k and low leakage characteristic, it is characterized by: this metal capacitor comprises at least:
One the first metal layer is positioned in the substrate;
One first dielectric layer with high energy gap characteristic is positioned on this metal level, and this first dielectric layer is an alumina layer;
The multiple layer of second dielectric with high-k is positioned on this first dielectric layer, and the combination of the material of the multiple layer of this second dielectric is enough to make the capacitance-voltage of this capacitor to close to be approximately linear, and each layer material of the multiple layer of this second dielectric is to be selected from by Ta
2O
5, TiO
2, ZrO
2, HfO
2, the group that forms of lead zirconate titanate and barium strontium titanate;
One the 3rd dielectric layer with high energy gap characteristic is positioned on the multiple layer of this second dielectric, and the 3rd dielectric layer is an alumina layer; And
One second metal level is positioned on the 3rd dielectric layer.
6. the metal capacitor that is applied in the mixed-signal semiconductor element as claimed in claim 5 is characterized by: this first metal layer and this second metal level comprise the titanium nitride layer at least.
7. the metal capacitor that is applied in the mixed-signal semiconductor element as claimed in claim 5 is characterized by: the thickness of this first dielectric layer and the 3rd dielectric layer is the 5-50 dust.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02120269 CN1288756C (en) | 2002-05-17 | 2002-05-17 | Metal capacitor having high dielectric constant and low current leakage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02120269 CN1288756C (en) | 2002-05-17 | 2002-05-17 | Metal capacitor having high dielectric constant and low current leakage |
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|---|---|
| CN1458692A CN1458692A (en) | 2003-11-26 |
| CN1288756C true CN1288756C (en) | 2006-12-06 |
Family
ID=29426991
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02120269 Expired - Lifetime CN1288756C (en) | 2002-05-17 | 2002-05-17 | Metal capacitor having high dielectric constant and low current leakage |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7316962B2 (en) | 2005-01-07 | 2008-01-08 | Infineon Technologies Ag | High dielectric constant materials |
| US7804678B2 (en) | 2007-04-25 | 2010-09-28 | Industrial Technology Research Institute | Capacitor devices |
| CN101964254B (en) * | 2009-07-23 | 2013-04-17 | 财团法人工业技术研究院 | Capacitor substrate structure |
| CN101989157A (en) * | 2009-08-03 | 2011-03-23 | 义隆电子股份有限公司 | High-sensitivity capacitance type touch assembly and manufacturing procedure thereof |
| CN102332447A (en) * | 2011-07-28 | 2012-01-25 | 上海宏力半导体制造有限公司 | Capacitor and forming method thereof |
| CN108962592A (en) * | 2018-07-18 | 2018-12-07 | 清华大学 | The capacitor film preparation method of high energy storage density and high charge-discharge efficiencies under high temperature |
| CN108962593A (en) * | 2018-07-18 | 2018-12-07 | 清华大学 | A kind of high dielectric capacitor method for manufacturing thin film based on magnetron sputtering |
| CN108878177A (en) * | 2018-07-18 | 2018-11-23 | 清华大学 | The high temperature capacitors method for manufacturing thin film of high-energy density and high charge-discharge efficiencies |
-
2002
- 2002-05-17 CN CN 02120269 patent/CN1288756C/en not_active Expired - Lifetime
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|---|---|
| CN1458692A (en) | 2003-11-26 |
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