CN101956168B - 一种钨钛合金靶材结构的制作方法 - Google Patents
一种钨钛合金靶材结构的制作方法 Download PDFInfo
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- CN101956168B CN101956168B CN2010105266709A CN201010526670A CN101956168B CN 101956168 B CN101956168 B CN 101956168B CN 2010105266709 A CN2010105266709 A CN 2010105266709A CN 201010526670 A CN201010526670 A CN 201010526670A CN 101956168 B CN101956168 B CN 101956168B
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- 229910001069 Ti alloy Inorganic materials 0.000 title claims abstract description 77
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 238000007747 plating Methods 0.000 claims abstract description 136
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 239000000126 substance Substances 0.000 claims abstract description 41
- 230000004913 activation Effects 0.000 claims abstract description 33
- 238000005516 engineering process Methods 0.000 claims abstract description 17
- 239000013077 target material Substances 0.000 claims description 110
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 85
- 229910052759 nickel Inorganic materials 0.000 claims description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 238000007772 electroless plating Methods 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 4
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
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- 229910052738 indium Inorganic materials 0.000 description 7
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- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical group FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
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- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 4
- 229910018104 Ni-P Inorganic materials 0.000 description 3
- 229910018536 Ni—P Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
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- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- RXGWEOPUMUXXTN-UHFFFAOYSA-N [Ni].P(O)(O)O Chemical compound [Ni].P(O)(O)O RXGWEOPUMUXXTN-UHFFFAOYSA-N 0.000 description 2
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
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- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
- 239000006004 Quartz sand Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
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- 238000006356 dehydrogenation reaction Methods 0.000 description 1
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- 239000000945 filler Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
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- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 210000000582 semen Anatomy 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102586742B (zh) * | 2011-11-30 | 2013-12-11 | 余姚康富特电子材料有限公司 | 靶材结构的制作方法 |
CN102586743A (zh) * | 2011-11-30 | 2012-07-18 | 余姚康富特电子材料有限公司 | 靶材结构的制作方法 |
CN102586744B (zh) * | 2011-12-30 | 2014-05-07 | 余姚康富特电子材料有限公司 | 靶材及其形成方法 |
CN103451606B (zh) * | 2012-06-01 | 2016-04-06 | 宁波江丰电子材料股份有限公司 | 钴靶材组件的制作方法 |
CN105331938A (zh) * | 2014-07-30 | 2016-02-17 | 宁波江丰电子材料股份有限公司 | 靶材组件的制作方法 |
CN105296943A (zh) * | 2014-07-30 | 2016-02-03 | 宁波江丰电子材料股份有限公司 | 靶材组件的制作方法 |
CN105803405A (zh) * | 2014-12-31 | 2016-07-27 | 宁波江丰电子材料股份有限公司 | 一种靶材结构的制作方法 |
CN106378507B (zh) * | 2015-07-30 | 2019-05-10 | 宁波江丰电子材料股份有限公司 | 钨钛靶材组件的焊接方法 |
CN106521431A (zh) * | 2015-09-09 | 2017-03-22 | 宁波江丰电子材料股份有限公司 | 一种镀镍Mo/Ti靶材的制备方法 |
CN107447194A (zh) * | 2016-05-31 | 2017-12-08 | 宁波江丰电子材料股份有限公司 | 钽靶材组件及其制造方法 |
CN107511599A (zh) * | 2016-06-15 | 2017-12-26 | 宁波江丰电子材料股份有限公司 | 钽靶材组件的焊接方法 |
CN105986160A (zh) * | 2016-06-24 | 2016-10-05 | 贵研铂业股份有限公司 | 一种制备大尺寸高纯钨钛合金靶材的方法 |
CN107779827A (zh) * | 2016-08-24 | 2018-03-09 | 宁波江丰电子材料股份有限公司 | 钨靶坯结构的制造方法以及钨靶材组件的制造方法 |
CN107779828A (zh) * | 2016-08-24 | 2018-03-09 | 宁波江丰电子材料股份有限公司 | 钼靶坯结构的制造方法以及钼靶材组件的制造方法 |
CN110894589A (zh) * | 2018-09-12 | 2020-03-20 | 宁波江丰电子材料股份有限公司 | 靶材组件形成方法 |
CN111168179A (zh) * | 2020-02-11 | 2020-05-19 | 宁波江丰电子材料股份有限公司 | 一种钨钛靶材与铜背板的钎焊方法 |
CN112276271A (zh) * | 2020-10-14 | 2021-01-29 | 宁波江丰电子材料股份有限公司 | 一种钛铝合金靶材的焊接方法 |
CN114918576B (zh) * | 2022-06-23 | 2023-08-18 | 北京安泰六九新材料科技有限公司 | 一种碳化钨绑定靶材及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US5306569A (en) * | 1990-06-15 | 1994-04-26 | Hitachi Metals, Ltd. | Titanium-tungsten target material and manufacturing method thereof |
CN1439741A (zh) * | 2002-10-23 | 2003-09-03 | 沈阳黎明航空发动机(集团)有限责任公司 | 一种钛合金化学镀厚镍的方法 |
CN1520466A (zh) * | 2001-04-26 | 2004-08-11 | ����Τ�����ʹ�˾ | 含钼和铝的组件以及在成形靶/背衬板组件中使用中间层的方法 |
CN1839213A (zh) * | 2003-08-21 | 2006-09-27 | 霍尼韦尔国际公司 | 在三元混合物中包含铜的pvd靶和形成含铜pvd靶的方法 |
-
2010
- 2010-10-29 CN CN2010105266709A patent/CN101956168B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5306569A (en) * | 1990-06-15 | 1994-04-26 | Hitachi Metals, Ltd. | Titanium-tungsten target material and manufacturing method thereof |
CN1520466A (zh) * | 2001-04-26 | 2004-08-11 | ����Τ�����ʹ�˾ | 含钼和铝的组件以及在成形靶/背衬板组件中使用中间层的方法 |
CN1439741A (zh) * | 2002-10-23 | 2003-09-03 | 沈阳黎明航空发动机(集团)有限责任公司 | 一种钛合金化学镀厚镍的方法 |
CN1839213A (zh) * | 2003-08-21 | 2006-09-27 | 霍尼韦尔国际公司 | 在三元混合物中包含铜的pvd靶和形成含铜pvd靶的方法 |
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