CN101946400B - Mems谐振器结构以及结合所述谐振器结构使用的方法 - Google Patents
Mems谐振器结构以及结合所述谐振器结构使用的方法 Download PDFInfo
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- CN101946400B CN101946400B CN200880127024.6A CN200880127024A CN101946400B CN 101946400 B CN101946400 B CN 101946400B CN 200880127024 A CN200880127024 A CN 200880127024A CN 101946400 B CN101946400 B CN 101946400B
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- 238000000034 method Methods 0.000 title description 23
- 230000003068 static effect Effects 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 44
- 230000008878 coupling Effects 0.000 claims description 32
- 238000010168 coupling process Methods 0.000 claims description 32
- 238000005859 coupling reaction Methods 0.000 claims description 32
- 230000004044 response Effects 0.000 claims description 17
- 230000010355 oscillation Effects 0.000 abstract 1
- 230000033001 locomotion Effects 0.000 description 59
- 238000005516 engineering process Methods 0.000 description 40
- 238000004519 manufacturing process Methods 0.000 description 26
- 230000007246 mechanism Effects 0.000 description 25
- 239000000463 material Substances 0.000 description 21
- 230000008602 contraction Effects 0.000 description 19
- 238000011161 development Methods 0.000 description 17
- 230000018109 developmental process Effects 0.000 description 17
- 230000008901 benefit Effects 0.000 description 15
- 238000013461 design Methods 0.000 description 15
- 238000004458 analytical method Methods 0.000 description 13
- 238000005549 size reduction Methods 0.000 description 12
- 230000007306 turnover Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000013459 approach Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000005452 bending Methods 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 230000002463 transducing effect Effects 0.000 description 7
- 230000003321 amplification Effects 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005086 pumping Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000001603 reducing effect Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000288049 Perdix perdix Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000018199 S phase Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- ZBZHVBPVQIHFJN-UHFFFAOYSA-N trimethylalumane Chemical compound C[Al](C)C.C[Al](C)C ZBZHVBPVQIHFJN-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/007—For controlling stiffness, e.g. ribs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02338—Suspension means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0109—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0145—Flexible holders
- B81B2203/0163—Spring holders
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02283—Vibrating means
- H03H2009/0233—Vibrating means comprising perforations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
- H03H2009/02503—Breath-like, e.g. Lam? mode, wine-glass mode
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/002,936 | 2007-12-18 | ||
| US12/002,936 US7777596B2 (en) | 2007-12-18 | 2007-12-18 | MEMS resonator structure and method |
| PCT/US2008/084946 WO2009079188A1 (en) | 2007-12-18 | 2008-11-26 | Mems resonator structure and method for use in association with the resonator structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101946400A CN101946400A (zh) | 2011-01-12 |
| CN101946400B true CN101946400B (zh) | 2014-10-01 |
Family
ID=40467328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880127024.6A Active CN101946400B (zh) | 2007-12-18 | 2008-11-26 | Mems谐振器结构以及结合所述谐振器结构使用的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7777596B2 (ja) |
| EP (1) | EP2235821B1 (ja) |
| JP (1) | JP5021816B2 (ja) |
| CN (1) | CN101946400B (ja) |
| TW (1) | TWI488432B (ja) |
| WO (1) | WO2009079188A1 (ja) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7777596B2 (en) * | 2007-12-18 | 2010-08-17 | Robert Bosch Gmbh | MEMS resonator structure and method |
| FR2933824B1 (fr) * | 2008-07-11 | 2010-08-13 | St Microelectronics Sa | Resonateur a ondes de volume |
| US7888843B2 (en) | 2008-09-10 | 2011-02-15 | Georgia Tech Research Corporation | Thin-film piezoelectric-on-insulator resonators having perforated resonator bodies therein |
| US8040207B2 (en) * | 2009-01-15 | 2011-10-18 | Infineon Technologies Ag | MEMS resonator devices with a plurality of mass elements formed thereon |
| US7939990B2 (en) * | 2009-01-30 | 2011-05-10 | Integrated Device Technology, Inc. | Thin-film bulk acoustic resonators having perforated bodies that provide reduced susceptibility to process-induced lateral dimension variations |
| FR2946478A1 (fr) * | 2009-06-08 | 2010-12-10 | St Microelectronics Sa | Resonateur a ondes de volume. |
| FR2946479A1 (fr) * | 2009-06-09 | 2010-12-10 | Commissariat Energie Atomique | Resonateur electromecanique a ancrage resonant. |
| US8381378B2 (en) * | 2009-06-19 | 2013-02-26 | Georgia Tech Research Corporation | Methods of forming micromechanical resonators having high density trench arrays therein that provide passive temperature compensation |
| US8106724B1 (en) | 2009-07-23 | 2012-01-31 | Integrated Device Technologies, Inc. | Thin-film bulk acoustic resonators having perforated resonator body supports that enhance quality factor |
| WO2011047170A1 (en) * | 2009-10-14 | 2011-04-21 | Gavin Ho | Micromechanical resonator with enlarged portion |
| FR2954021B1 (fr) * | 2009-12-10 | 2012-08-03 | Commissariat Energie Atomique | Micro/nano-resonateur compense a detection capacitive amelioree et procede d'elaboration |
| KR101188007B1 (ko) | 2010-06-21 | 2012-10-05 | 삼성전기주식회사 | 햅틱 피드백 액츄에이터, 햅틱 피드백 디바이스 및 전자장치 |
| FR2964652B1 (fr) * | 2010-09-13 | 2015-05-15 | Commissariat Energie Atomique | Dispositif resonant, a detection piezoresistive et a resonateur relie de facon elastique au support du dispositif, et procede de fabrication de celui-ci |
| FR2965349B1 (fr) * | 2010-09-23 | 2017-01-20 | Commissariat Energie Atomique | Bolometre a detection frequentielle |
| EP2479891A1 (en) * | 2011-01-21 | 2012-07-25 | Imec | MEMS resonator with optimized support anchoring |
| JP5588889B2 (ja) * | 2011-02-08 | 2014-09-10 | 太陽誘電株式会社 | 弾性波デバイスおよびフィルタ |
| US8501515B1 (en) | 2011-02-25 | 2013-08-06 | Integrated Device Technology Inc. | Methods of forming micro-electromechanical resonators using passive compensation techniques |
| EP2515436A1 (en) | 2011-04-18 | 2012-10-24 | Nxp B.V. | MEMS resonator and method of controlling the same |
| US8610336B1 (en) | 2011-09-30 | 2013-12-17 | Integrated Device Technology Inc | Microelectromechanical resonators having resistive heating elements therein configured to provide frequency tuning through convective heating of resonator bodies |
| DE102011057169A1 (de) * | 2011-12-29 | 2013-07-04 | Maxim Integrated Products, Inc. | Mikroelektromechanisches System |
| TWI519066B (zh) * | 2012-06-28 | 2016-01-21 | 清華大學 | 微機電共振器及其訊號處理方法以及製造方法 |
| US10419858B2 (en) * | 2014-03-03 | 2019-09-17 | Tdk Corporation | Condenser microphone with non-circular membrane |
| KR20160140698A (ko) * | 2014-04-04 | 2016-12-07 | 멤스 스타트 엘엘씨 | 광전자 소자를 이동시키기 위한 액추에이터 |
| CN104202011A (zh) * | 2014-08-29 | 2014-12-10 | 电子科技大学 | 基于绝缘材料振动块的mems谐振器 |
| CN104218916B (zh) * | 2014-08-29 | 2017-05-31 | 电子科技大学 | 具有lc串联谐振电路的mems谐振器 |
| JP7006172B2 (ja) * | 2017-11-21 | 2022-01-24 | セイコーエプソン株式会社 | 波長可変干渉フィルター、光学デバイス、光学モジュール、及び電子機器 |
| US10816569B2 (en) * | 2018-09-07 | 2020-10-27 | Analog Devices, Inc. | Z axis accelerometer using variable vertical gaps |
| US11255873B2 (en) | 2018-09-12 | 2022-02-22 | Analog Devices, Inc. | Increased sensitivity z-axis accelerometer |
| EP4162281A1 (en) | 2020-06-08 | 2023-04-12 | Analog Devices, Inc. | Stress-relief mems gyroscope |
| CN116075728A (zh) | 2020-06-08 | 2023-05-05 | 美国亚德诺半导体公司 | 驱动和感测应力释放装置 |
| US11698257B2 (en) | 2020-08-24 | 2023-07-11 | Analog Devices, Inc. | Isotropic attenuated motion gyroscope |
| CN112187225B (zh) * | 2020-10-09 | 2023-11-03 | 京东方科技集团股份有限公司 | 时钟校准方法及装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6940370B2 (en) * | 2002-05-06 | 2005-09-06 | The Regents Of The University Of California | MEMS resonator and method of making same |
| US7307496B2 (en) * | 2004-03-04 | 2007-12-11 | Xiangxiang Huang | Method and apparatus for frequency tuning of a micro-mechanical resonator |
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| JPH11136069A (ja) * | 1997-10-28 | 1999-05-21 | Matsushita Electric Ind Co Ltd | 圧電体モジュール素子およびその製造方法 |
| DE59905083D1 (de) * | 1998-05-08 | 2003-05-22 | Infineon Technologies Ag | Dünnfilm-piezoresonator |
| US6445106B1 (en) * | 2000-02-18 | 2002-09-03 | Intel Corporation | Micro-electromechanical structure resonator, method of making, and method of using |
| US6420202B1 (en) * | 2000-05-16 | 2002-07-16 | Agere Systems Guardian Corp. | Method for shaping thin film resonators to shape acoustic modes therein |
| US6744174B2 (en) * | 2001-04-03 | 2004-06-01 | The Regents Of The University Of California | Frequency sensitivity analysis and optimum design for MEMS resonator |
| US6624726B2 (en) | 2001-08-31 | 2003-09-23 | Motorola, Inc. | High Q factor MEMS resonators |
| US6630871B2 (en) * | 2001-09-28 | 2003-10-07 | Intel Corporation | Center-mass-reduced microbridge structures for ultra-high frequency MEM resonator |
| US6978673B2 (en) * | 2003-02-07 | 2005-12-27 | Honeywell International, Inc. | Methods and systems for simultaneously fabricating multi-frequency MEMS devices |
| JP2004279384A (ja) | 2003-03-19 | 2004-10-07 | Sumitomo Precision Prod Co Ltd | 振動子の製造方法、振動子及びフォトマスク |
| US20050073078A1 (en) | 2003-10-03 | 2005-04-07 | Markus Lutz | Frequency compensated oscillator design for process tolerances |
| FR2872501B1 (fr) * | 2004-07-01 | 2006-11-03 | Commissariat Energie Atomique | Microresonateur composite a forte deformation |
| FR2876180B1 (fr) | 2004-10-06 | 2006-12-08 | Commissariat Energie Atomique | Resonateur a masses oscillantes. |
| US7205867B2 (en) * | 2005-05-19 | 2007-04-17 | Robert Bosch Gmbh | Microelectromechanical resonator structure, and method of designing, operating and using same |
| US7227432B2 (en) | 2005-06-30 | 2007-06-05 | Robert Bosch Gmbh | MEMS resonator array structure and method of operating and using same |
| US7543496B2 (en) * | 2006-03-27 | 2009-06-09 | Georgia Tech Research Corporation | Capacitive bulk acoustic wave disk gyroscopes |
| US7616077B1 (en) * | 2007-03-22 | 2009-11-10 | Sandia Corporation | Microelectromechanical resonator and method for fabrication |
| US7777596B2 (en) * | 2007-12-18 | 2010-08-17 | Robert Bosch Gmbh | MEMS resonator structure and method |
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2007
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- 2008-11-26 JP JP2010539585A patent/JP5021816B2/ja active Active
- 2008-11-26 CN CN200880127024.6A patent/CN101946400B/zh active Active
- 2008-11-26 EP EP08862478A patent/EP2235821B1/en active Active
- 2008-11-26 WO PCT/US2008/084946 patent/WO2009079188A1/en active Application Filing
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6940370B2 (en) * | 2002-05-06 | 2005-09-06 | The Regents Of The University Of California | MEMS resonator and method of making same |
| US7307496B2 (en) * | 2004-03-04 | 2007-12-11 | Xiangxiang Huang | Method and apparatus for frequency tuning of a micro-mechanical resonator |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009079188A1 (en) | 2009-06-25 |
| EP2235821A1 (en) | 2010-10-06 |
| TW200943708A (en) | 2009-10-16 |
| EP2235821B1 (en) | 2013-03-27 |
| TWI488432B (zh) | 2015-06-11 |
| US20110018655A1 (en) | 2011-01-27 |
| WO2009079188A9 (en) | 2010-09-02 |
| US20090153267A1 (en) | 2009-06-18 |
| JP5021816B2 (ja) | 2012-09-12 |
| CN101946400A (zh) | 2011-01-12 |
| US8222974B2 (en) | 2012-07-17 |
| JP2011507455A (ja) | 2011-03-03 |
| US7777596B2 (en) | 2010-08-17 |
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