CN101944505B - 具有沟槽结构的soi高压功率器件芯片的制备方法 - Google Patents
具有沟槽结构的soi高压功率器件芯片的制备方法 Download PDFInfo
- Publication number
- CN101944505B CN101944505B CN2010102203604A CN201010220360A CN101944505B CN 101944505 B CN101944505 B CN 101944505B CN 2010102203604 A CN2010102203604 A CN 2010102203604A CN 201010220360 A CN201010220360 A CN 201010220360A CN 101944505 B CN101944505 B CN 101944505B
- Authority
- CN
- China
- Prior art keywords
- voltage power
- power device
- high voltage
- soi
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 20
- 238000002955 isolation Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 39
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 230000000994 depressogenic effect Effects 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 8
- 230000009977 dual effect Effects 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 230000008929 regeneration Effects 0.000 claims description 3
- 238000011069 regeneration method Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102203604A CN101944505B (zh) | 2010-07-06 | 2010-07-06 | 具有沟槽结构的soi高压功率器件芯片的制备方法 |
PCT/CN2010/076671 WO2012003658A1 (zh) | 2010-07-06 | 2010-09-07 | 具有沟槽结构的soi高压功率器件芯片的制备方法 |
US13/133,886 US8377755B2 (en) | 2010-07-06 | 2010-09-07 | Method for fabricating SOI high voltage power chip with trenches |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102203604A CN101944505B (zh) | 2010-07-06 | 2010-07-06 | 具有沟槽结构的soi高压功率器件芯片的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101944505A CN101944505A (zh) | 2011-01-12 |
CN101944505B true CN101944505B (zh) | 2012-06-27 |
Family
ID=43436424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010102203604A Active CN101944505B (zh) | 2010-07-06 | 2010-07-06 | 具有沟槽结构的soi高压功率器件芯片的制备方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN101944505B (zh) |
WO (1) | WO2012003658A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101916727B (zh) * | 2010-07-06 | 2012-05-09 | 中国科学院上海微系统与信息技术研究所 | Soi高压功率器件的制备方法 |
CN103066079B (zh) * | 2013-01-21 | 2015-07-29 | 清华大学 | 半导体器件间隔离结构及其形成方法 |
CN111969065B (zh) * | 2020-10-22 | 2021-02-09 | 晶芯成(北京)科技有限公司 | 一种半导体装置的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1670946A (zh) * | 2005-02-16 | 2005-09-21 | 中国电子科技集团公司第二十四研究所 | 高压大功率低压差线性集成稳压电源电路的制造方法 |
US7582935B2 (en) * | 2002-05-28 | 2009-09-01 | Fairchild Korea Semiconductor Ltd | Methods for manufacturing SOI substrate using wafer bonding and complementary high voltage bipolar transistor using the SOI substrate |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3783156B2 (ja) * | 2001-10-17 | 2006-06-07 | 株式会社日立製作所 | 半導体装置 |
KR100448889B1 (ko) * | 2002-11-22 | 2004-09-18 | 한국전자통신연구원 | 에스오아이 기판을 이용한 전력 집적회로용 소자의 제조방법 |
-
2010
- 2010-07-06 CN CN2010102203604A patent/CN101944505B/zh active Active
- 2010-09-07 WO PCT/CN2010/076671 patent/WO2012003658A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7582935B2 (en) * | 2002-05-28 | 2009-09-01 | Fairchild Korea Semiconductor Ltd | Methods for manufacturing SOI substrate using wafer bonding and complementary high voltage bipolar transistor using the SOI substrate |
CN1670946A (zh) * | 2005-02-16 | 2005-09-21 | 中国电子科技集团公司第二十四研究所 | 高压大功率低压差线性集成稳压电源电路的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2012003658A1 (zh) | 2012-01-12 |
CN101944505A (zh) | 2011-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101916727B (zh) | Soi高压功率器件的制备方法 | |
CN100388504C (zh) | 具有隔离结构的高电压ldmos晶体管 | |
US8377755B2 (en) | Method for fabricating SOI high voltage power chip with trenches | |
CN104025269B (zh) | 一种自对准金属氧化物薄膜晶体管器件的制造方法 | |
CN101944505B (zh) | 具有沟槽结构的soi高压功率器件芯片的制备方法 | |
CN108962974A (zh) | 一种具有l形垂直场板的ldmos晶体管 | |
CN108091685A (zh) | 一种提高耐压的半超结mosfet结构及其制备方法 | |
CN103745996B (zh) | 带有部分绝缘埋层的横向功率器件及制作方法 | |
CN208028069U (zh) | 具有埋层结构的新型双面阶梯埋氧型soi ldmos | |
CN105304693B (zh) | 一种ldmos器件的制造方法 | |
CN102446967A (zh) | 含有复合漂移区的soi ldmos器件 | |
CN105097936A (zh) | 一种绝缘层上硅ldmos功率器件 | |
CN105206675A (zh) | Nldmos器件及其制造方法 | |
CN109698196B (zh) | 功率半导体器件 | |
CN105590958A (zh) | 双沟槽高压屏蔽的横向绝缘栅双极器件及其制备方法 | |
CN102214679B (zh) | 形成于绝缘体上硅中的自隔离式高压半桥结构 | |
CN108550591A (zh) | Soi衬底结构及其制备方法、半导体器件及其制备方法 | |
CN106876450A (zh) | 低栅漏电容的纵向场效应晶体管及其制造方法 | |
CN103762237A (zh) | 具有场板结构的横向功率器件 | |
CN108389906A (zh) | 高压金属氧化物半导体晶体管元件 | |
CN103700701B (zh) | 基于soi工艺的背栅漏/源半浮前栅p-mosfet射频开关器件 | |
CN204011433U (zh) | 功率半导体器件 | |
CN208923149U (zh) | 一种n型ldmos器件 | |
CN107146814A (zh) | 高压半导体装置及其制造方法 | |
US20140306266A1 (en) | High-current n-type silicon-on-insulator lateral insulated-gate bipolar transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190606 Address after: Room J2620, No. 2222 Huancheng Road, Juyuan New District, Jiading District, Shanghai, 20182 Patentee after: Shanghai Gongcheng Semiconductor Technology Co.,Ltd. Address before: 200050 No. 865, Changning Road, Shanghai, Changning District Patentee before: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences |
|
TR01 | Transfer of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Preparation method of SOI high-voltage power device chip with groove structure Effective date of registration: 20231228 Granted publication date: 20120627 Pledgee: Wuding Road Sub branch of Bank of Shanghai Co.,Ltd. Pledgor: Shanghai Gongcheng Semiconductor Technology Co.,Ltd. Registration number: Y2023980075345 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |