CN101937928B - Production method of cilicon controlled rectifier structure capable of eliminating hazards of punching through lithography pinholes - Google Patents
Production method of cilicon controlled rectifier structure capable of eliminating hazards of punching through lithography pinholes Download PDFInfo
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- CN101937928B CN101937928B CN2010102121638A CN201010212163A CN101937928B CN 101937928 B CN101937928 B CN 101937928B CN 2010102121638 A CN2010102121638 A CN 2010102121638A CN 201010212163 A CN201010212163 A CN 201010212163A CN 101937928 B CN101937928 B CN 101937928B
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Abstract
The invention relates to a method for producing a silicon controlled rectifier structure, which eliminates harm of punchthrough photoetching pinholes and is characterized by comprising steps of growth of a thicker primary oxide layer, primary photoetching of punchthrough rings, secondary oxidation and secondary photoetching, wherein the step of growth of a thicker primary oxide layer includes: placing silicon controlled rectifier wafer in a high temperature diffusion furnace for oxidation, firstly oxidizing for 1-3h by using dry oxygen under an oxidation temperature of 1150+/-20 DEG C, then oxidizing for 8-10h by using wet oxygen, finally oxidizing for 1-3h by using the dry oxygen, achieving the thickness of the primary oxide layer of the silicon controlled rectifier wafer to 1.6-2.0mum. The method has the advantages of thoroughly eliminating the harm of the pinholes and greatly improving the batch qualification rate of silicon controlled rectifier products.
Description
Technical field
The present invention relates to a kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole.
Background technology
Because the purification horizontal factor of factory, particles such as dust particle have caused very big influence to photoetching quality, and dust particle, other granules and soft flocks etc. have dropped on glued membrane or the reticle, all can form pin hole.Behind the photoetching corrosion, oxide layer is corroded here, makes that here the barrier action to boron diffusion disappears, and causes boron penetration in growing base area, forms spike, and the actual effective length of growing base area shortens, and voltage reduces even damage.Therefore press for searching new method and structure to address the above problem.
Summary of the invention
The purpose of this invention is to provide a kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole.
The technical scheme that the present invention adopts is:
A kind of SCR structure of eliminating the harm of photoetching pin hole; Comprise controlled silicon chip; Generate once oxide layer, secondary oxidation layer and boron diffusion break-through ring on the said controlled silicon chip, photoetching produces on the said once oxidation layer has a plurality of pin holes, and said each pin hole place does not have oxide layer one time; Said secondary oxidation layer is covered on once oxidation layer and the pin hole; Said secondary oxidation layer photoetching produces has a plurality of secondary pin holes; Said each secondary pin hole place does not have the secondary oxidation layer but does not penetrate the once oxidation layer, and said boron diffusion break-through is located on the left and right sides of once oxidation layer and secondary oxidation layer.
Said secondary oxidation layer thickness is less than the once oxidation layer thickness.
A kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole comprises thicker once oxidation layer, photoetching break-through ring, secondary oxidation and the secondary lithography step of growth one deck,
The once oxidation layer step that said growth one deck is thicker is: place high temperature dispersing furnace to carry out oxidation controlled silicon chip; In oxidizing temperature is under 1150 ± 20 degree; At first carried out dry-oxygen oxidation 1-3 hour; Carried out then wet-oxygen oxidation 8-10 hour, carried out again at last dry-oxygen oxidation 1-3 hour, realize that the once oxidation layer thickness of controlled silicon chip reaches the 1.6-2.0 micron;
A said photoetching break-through ring step is: the controlled silicon chip that will generate behind the once oxidation places on the double face photoetching machine; Behind positive back side reticle figure aligning; Controlled silicon chip is carried out photoetching; Utilize chemical corrosion liquid that break-through ring internal oxidation layer is thoroughly eroded, the photoetching generation has a plurality of pin holes on the once oxidation layer on the controlled silicon chip at this moment, and said each pin hole place does not have oxide layer one time;
Said secondary oxidation step is: place high temperature dispersing furnace to carry out oxidation the controlled silicon chip after the photoetching; In oxidizing temperature is under 1150 ± 20 degree; At first carried out dry-oxygen oxidation 1-3 hour, carried out then wet-oxygen oxidation 4-6 hour, carried out again at last dry-oxygen oxidation 1-3 hour; The secondary oxidation layer thickness of realizing controlled silicon chip reaches the 0.6-1.0 micron, and said secondary oxidation layer is covered on once oxidation layer, pin hole and the break-through ring;
Said secondary lithography step is: the controlled silicon chip that will generate behind the secondary oxidation places on the single face mask aligner; Utilize the reticle in the photoetching break-through ring step one time; Behind the pattern alignment of the positive back side of controlled silicon chip, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that secondary oxidation layer in the break-through ring is thoroughly eroded; Secondary oxidation layer photoetching on the said controlled silicon chip produces has a plurality of secondary pin holes, and said each secondary pin hole place does not have the secondary oxidation layer but do not penetrate the once oxidation layer.
Said wet-oxygen oxidation is the synthetic oxidation of steam oxidation or hydrogen-oxygen, and the bath temperature during said steam oxidation is the 90-95 degree, and the oxygen gas flow rate of taking steam is 1.2-2L/ minute; The speed that feeds hydrogen when said hydrogen-oxygen synthesizes oxidation is 2.5-3.5L/ minute, and the speed of aerating oxygen is 1.8-2.5L/ minute.
Advantage of the present invention is: thoroughly eliminated pin hole harm, improved controllable silicon product batches qualification rate greatly.
Embodiment
Embodiment 1
As shown in Figure 1, a kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole of the present invention comprises thicker once oxidation layer, photoetching break-through ring, secondary oxidation and the secondary lithography step of growth one deck,
The once oxidation layer step that said growth one deck is thicker is: place high temperature dispersing furnace to carry out oxidation controlled silicon chip; In oxidizing temperature is under 1130 degree; At first carried out dry-oxygen oxidation 1 hour; Carried out wet-oxygen oxidation then 8 hours, and carried out dry-oxygen oxidation again 1 hour at last, realize that the once oxidation layer thickness of controlled silicon chip reaches 1.6 microns;
A said photoetching break-through ring step is: the controlled silicon chip that will generate behind the once oxidation places on the double face photoetching machine; Behind positive back side reticle figure aligning; Controlled silicon chip is carried out photoetching; Utilize chemical corrosion liquid that break-through ring internal oxidation layer is thoroughly eroded, the photoetching generation has a plurality of pin holes on the once oxidation layer on the controlled silicon chip at this moment, and said each pin hole place does not have oxide layer one time;
Said secondary oxidation step is: place high temperature dispersing furnace to carry out oxidation the controlled silicon chip after the photoetching; In oxidizing temperature is under 1130 degree; At first carry out dry-oxygen oxidation 1 hour, carried out wet-oxygen oxidation then 4 hours, carried out dry-oxygen oxidation again 1 hour at last; The secondary oxidation layer thickness of realizing controlled silicon chip reaches 0.6 micron, and said secondary oxidation layer is covered on once oxidation layer, pin hole and the break-through ring;
Said secondary lithography step is: the controlled silicon chip that will generate behind the secondary oxidation places on the single face mask aligner; Utilize the reticle in the photoetching break-through ring step one time; Behind the pattern alignment of the positive back side of controlled silicon chip, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that secondary oxidation layer in the break-through ring is thoroughly eroded; Secondary oxidation layer photoetching on the said controlled silicon chip produces has a plurality of secondary pin holes, and said each secondary pin hole place does not have the secondary oxidation layer but do not penetrate the once oxidation layer.
Said wet-oxygen oxidation is the synthetic oxidation of steam oxidation or hydrogen-oxygen, and the bath temperature during said steam oxidation is 90 degree, and the oxygen gas flow rate of taking steam is 1.2L/ minute; The speed that feeds hydrogen when said hydrogen-oxygen synthesizes oxidation is 2.5L/ minute, and the speed of aerating oxygen is 1.8L/ minute.
Advantage of the present invention is: thoroughly eliminated pin hole harm, improved controllable silicon product batches qualification rate greatly.
Embodiment 2
A kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole comprises thicker once oxidation layer, photoetching break-through ring, secondary oxidation and the secondary lithography step of growth one deck,
The once oxidation layer step that said growth one deck is thicker is: place high temperature dispersing furnace to carry out oxidation controlled silicon chip; In oxidizing temperature is under 1170 degree; At first carried out dry-oxygen oxidation 3 hours; Carried out wet-oxygen oxidation then 10 hours, and carried out dry-oxygen oxidation again 3 hours at last, realize that the once oxidation layer thickness of controlled silicon chip reaches 2.0 microns;
A said photoetching break-through ring step is: the controlled silicon chip that will generate behind the once oxidation places on the double face photoetching machine; Behind positive back side reticle figure aligning; Controlled silicon chip is carried out photoetching; Utilize chemical corrosion liquid that break-through ring internal oxidation layer is thoroughly eroded, the photoetching generation has a plurality of pin holes on the once oxidation layer on the controlled silicon chip at this moment, and said each pin hole place does not have oxide layer one time;
Said secondary oxidation step is: place high temperature dispersing furnace to carry out oxidation the controlled silicon chip after the photoetching; In oxidizing temperature is under 1170 degree; At first carry out dry-oxygen oxidation 3 hours, carried out wet-oxygen oxidation then 6 hours, carried out dry-oxygen oxidation again 3 hours at last; The secondary oxidation layer thickness of realizing controlled silicon chip reaches 1.0 microns, and said secondary oxidation layer is covered on once oxidation layer, pin hole and the break-through ring;
Said secondary lithography step is: the controlled silicon chip that will generate behind the secondary oxidation places on the single face mask aligner; Utilize the reticle in the photoetching break-through ring step one time; Behind the pattern alignment of the positive back side of controlled silicon chip, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that secondary oxidation layer in the break-through ring is thoroughly eroded; Secondary oxidation layer photoetching on the said controlled silicon chip produces has a plurality of secondary pin holes, and said each secondary pin hole place does not have the secondary oxidation layer but do not penetrate the once oxidation layer.
Wet-oxygen oxidation is the synthetic oxidation of steam oxidation or hydrogen-oxygen, and the bath temperature during said steam oxidation is 95 degree, and the oxygen gas flow rate of taking steam is 2L/ minute; The speed that feeds hydrogen when said hydrogen-oxygen synthesizes oxidation is 3.5L/ minute, and the speed of aerating oxygen is 2.5L/ minute.All the other are with embodiment 1.
Embodiment 3
A kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole comprises thicker once oxidation layer, photoetching break-through ring, secondary oxidation and the secondary lithography step of growth one deck,
The once oxidation layer step that said growth one deck is thicker is: place high temperature dispersing furnace to carry out oxidation controlled silicon chip; In oxidizing temperature is under 1150 degree; At first carried out dry-oxygen oxidation 2 hours; Carried out wet-oxygen oxidation then 9 hours, and carried out dry-oxygen oxidation again 2 hours at last, realize that the once oxidation layer thickness of controlled silicon chip reaches 1.8 microns;
A said photoetching break-through ring step is: the controlled silicon chip that will generate behind the once oxidation places on the double face photoetching machine; Behind positive back side reticle figure aligning; Controlled silicon chip is carried out photoetching; Utilize chemical corrosion liquid that break-through ring internal oxidation layer is thoroughly eroded, the photoetching generation has a plurality of pin holes on the once oxidation layer on the controlled silicon chip at this moment, and said each pin hole place does not have oxide layer one time;
Said secondary oxidation step is: place high temperature dispersing furnace to carry out oxidation the controlled silicon chip after the photoetching; In oxidizing temperature is under 1150 degree; At first carry out dry-oxygen oxidation 2 hours, carried out wet-oxygen oxidation then 5 hours, carried out dry-oxygen oxidation again 2 hours at last; The secondary oxidation layer thickness of realizing controlled silicon chip reaches 0.8 micron, and said secondary oxidation layer is covered on once oxidation layer, pin hole and the break-through ring;
Said secondary lithography step is: the controlled silicon chip that will generate behind the secondary oxidation places on the single face mask aligner; Utilize the reticle in the photoetching break-through ring step one time; Behind the pattern alignment of the positive back side of controlled silicon chip, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that secondary oxidation layer in the break-through ring is thoroughly eroded; Secondary oxidation layer photoetching on the said controlled silicon chip produces has a plurality of secondary pin holes, and said each secondary pin hole place does not have the secondary oxidation layer but do not penetrate the once oxidation layer.
Said wet-oxygen oxidation is the synthetic oxidation of steam oxidation or hydrogen-oxygen, and the bath temperature during said steam oxidation is 93 degree, and the oxygen gas flow rate of taking steam is 1.6L/ minute; The speed that feeds hydrogen when said hydrogen-oxygen synthesizes oxidation is 3L/ minute, and the speed of aerating oxygen is 2.2L/ minute.All the other are with embodiment 1.
Claims (2)
1. eliminate the SCR structure production method that break-through photoetching pin hole endangers for one kind, it is characterized in that:
Comprise thicker once oxidation layer, photoetching break-through ring, secondary oxidation and the secondary lithography step of growth one deck,
The once oxidation layer step that said growth one deck is thicker is: place high temperature dispersing furnace to carry out oxidation controlled silicon chip; In oxidizing temperature is under 1150 ± 20 degree; At first carried out dry-oxygen oxidation 1-3 hour; Carried out then wet-oxygen oxidation 8-10 hour, carried out again at last dry-oxygen oxidation 1-3 hour, realize that the once oxidation layer thickness of controlled silicon chip reaches the 1.6-2.0 micron;
A said photoetching break-through ring step is: the controlled silicon chip that will generate behind the once oxidation places on the double face photoetching machine; Behind positive back side reticle figure aligning; Controlled silicon chip is carried out photoetching; Utilize chemical corrosion liquid that break-through ring internal oxidation layer is thoroughly eroded, the photoetching generation has a plurality of pin holes on the once oxidation layer on the controlled silicon chip at this moment, and said each pin hole place does not have oxide layer one time;
Said secondary oxidation step is: place high temperature dispersing furnace to carry out oxidation the controlled silicon chip after the photoetching; In oxidizing temperature is under 1150 ± 20 degree; At first carried out dry-oxygen oxidation 1-3 hour, carried out then wet-oxygen oxidation 4-6 hour, carried out again at last dry-oxygen oxidation 1-3 hour; The secondary oxidation layer thickness of realizing controlled silicon chip reaches the 0.6-1.0 micron, and said secondary oxidation layer is covered on once oxidation layer, pin hole and the break-through ring;
Said secondary lithography step is: the controlled silicon chip that will generate behind the secondary oxidation places on the single face mask aligner; Utilize the reticle in the photoetching break-through ring step one time; Behind the pattern alignment of the positive back side of controlled silicon chip, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that secondary oxidation layer in the break-through ring is thoroughly eroded; Secondary oxidation layer photoetching on the said controlled silicon chip produces has a plurality of secondary pin holes, and said each secondary pin hole place does not have the secondary oxidation layer but do not penetrate the once oxidation layer.
2. a kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole according to claim 1; It is characterized in that: said wet-oxygen oxidation is the synthetic oxidation of steam oxidation or hydrogen-oxygen; Bath temperature during said steam oxidation is the 90-95 degree, and the oxygen gas flow rate of taking steam is 1.2-2L/ minute; The speed that feeds hydrogen when said hydrogen-oxygen synthesizes oxidation is 2.5-3.5L/ minute, and the speed of aerating oxygen is 1.8-2.5L/ minute.
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Address after: No.1800, Mudanjiang West Road, Huilong Town, Nantong City, Jiangsu Province, 226000 Patentee after: Jiangsu Jilai Microelectronics Co.,Ltd. Address before: 1261 Gongyuan North Road, Huilong Town, Qidong City, Nantong City, Jiangsu Province Patentee before: QIDONG JILAI ELECTRONICS Co.,Ltd. |
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