CN102938434B - Wet oxidation method for preparing silica masks - Google Patents
Wet oxidation method for preparing silica masks Download PDFInfo
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- CN102938434B CN102938434B CN201210457002.4A CN201210457002A CN102938434B CN 102938434 B CN102938434 B CN 102938434B CN 201210457002 A CN201210457002 A CN 201210457002A CN 102938434 B CN102938434 B CN 102938434B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses a wet oxidation method for preparing silica masks. The method is characterized by comprising the steps of sending texturized silicon wafers into a wet oxidation diffusion furnace reaction furnace tube, feeding nitrogen during the heating, sustaining for specified time to stabilize reaction cavity atmosphere, feeding nitrogen, wet oxygen and liquid phosphorus oxychloride carried by the nitrogen for precipitation, stopping the nitrogen and phosphorus oxychloride supplying after the precipitation is completed, feeding the wet oxygen continuously, improving the heating temperature for further oxidation, and feeding the nitrogen for cooling after the oxidation. According to the silica masks prepared by the method, the structure compactness and the uniformity of silica masks are improved, and secondary phosphorus atom diffusion is stopped effectively.
Description
Technical field
The present invention relates to a kind of wet oxidation and prepare the method for earth silicon mask, be mainly used in crystalline silicon selective emitter battery mask processed aspect, specifically plant the method that earth silicon mask is prepared in the oxidation of selective emitter of crystalline silicon solar cell cell wet-method in one.
Background technology
Solar cell main development direction is reduce costs and improve transformation efficiency, and under the manufacture of solar cells mode of standard, the lifting of efficiency has approached the limit at present, and photovoltaic industry has all been focused in high-efficiency battery technique.In numerous technology, selective emitter battery is in production technology, to be hopeful one of method of raising the efficiency, so-called selective emitting electrode structure is: under gate electrode line, near machine, form highly doped refreshing diffusion region, form low-doped shallow diffusion region in other regions.In the selective emitter battery process that wherein prepared by twice diffusion method by oxide-diffused obtains for the first time oxide layer as diffusion impervious layer, then by photoetching or corrosive slurry, remove oxide layer, then form selective emitter by common diffusion way.Wherein first step diffusible oxydation mask processed becomes one of its core technology, only makes this mask can successfully keep out heavy doping for the second time, could form the structure of selective emitter.
Summary of the invention
The object of the invention is can not effectively keep out the problem that spreads for the second time phosphorus atoms diffusion and proposed a kind of method that wet oxidation is prepared earth silicon mask at present forming shallow diffusion layer for the first time by common diffusion furnace diffusible oxydation.
Object of the present invention can be achieved through the following technical solutions:
Wet oxidation is prepared a method for earth silicon mask, it is characterized in that it comprises the following steps:
(1) silicon chip of making herbs into wool is sent into wet oxidation diffusion furnace reaction boiler tube, furnace tube temperature is heated to 770 ~ 850 ℃ in 10min, passes into nitrogen flow 5-8slm simultaneously, continues 3min;
(2) pass into nitrogen flow 3-7slm, oxygen flow 300 ~ 500sccm, nitrogen carries phosphorus oxychloride gas flow 1300-1700sccm, continues 15-18min;
(3) pass into wet oxygen flow 2700 ~ 3000sccm, continue 10-12min;
(4) with 4 ℃ of speed rising furnace tube temperature to 870 ~ 890 ℃ per minute, pass into nitrogen flow is 10 ~ 13slm simultaneously;
(5) maintain the temperature at 870 ~ 890 ℃, passing into wet oxygen flow is 5 ~ 7slm, and wet oxygen temperature is controlled at 70 ~ 80 ℃, continues 15 ~ 17min;
(6) passing into nitrogen flow is 15 ~ 20slm, is cooled to 830 ℃, makes earth silicon mask.
In step of the present invention (1), in boiler tube, temperature is heated to 780 ℃.
In step of the present invention (2), passing into nitrogen flow is 5slm, oxygen flow 400sccm, and the phosphorus oxychloride gas flow that nitrogen carries is 1500sccm.
In step of the present invention (3), wet oxygen flow is 2800sccm, duration 11min.
In step of the present invention (5), temperature constant is at 880 ℃.Passing into wet oxygen flow is 6slm, and the temperature of wet oxygen is 75 ℃, and the duration is 16min.
Beneficial effect of the present invention: earth silicon mask prepared by the present invention's wet oxidation used can reduce mask film formation time aborning, enhance productivity, mask structure is fine and close and even, the phosphorus atoms that can effectively keep out in secondary diffusion further spreads, and makes selective emitter battery structure more stable.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
Embodiment 1
Wet oxidation is prepared a method for earth silicon mask, it is characterized in that it comprises the following steps: (1) sends the silicon chip of making herbs into wool into wet oxidation diffusion furnace reaction boiler tube, and furnace tube temperature is heated to 810 ℃ in 10min, passes into nitrogen 6.5slm simultaneously; (2) pass into nitrogen flow 3.5slm, oxygen flow 350sccm, nitrogen carries phosphorus oxychloride gas flow 1300sccm, continues 17min:(3) and pass into wet oxygen flow 2750sccm, continue 10.5min; (4) with 4 ℃ of speed rising furnace tube temperatures to 878 ℃ per minute, pass into nitrogen flow is 12slm simultaneously; (5) maintain the temperature at 878 ℃, passing into wet oxygen flow is 5.5slm, and wet oxygen temperature is controlled at 74 ℃, continues 15.5min; (6) passing into nitrogen flow is 18slm, is cooled to 830 ℃, makes earth silicon mask.
Embodiment 2
Wet oxidation is prepared a method for earth silicon mask, it is characterized in that it comprises the following steps: (1) sends the silicon chip of making herbs into wool into wet oxidation diffusion furnace reaction boiler tube, and furnace tube temperature is heated to 780 ℃ in 10min, passes into nitrogen 5.8slm simultaneously; (2) pass into nitrogen flow 5slm, oxygen flow 400sccm, nitrogen carries phosphorus oxychloride gas flow 1500sccm, continues 18min:(3) and pass into wet oxygen flow 2800sccm, continue 11min; (4) with 4 ℃ of speed rising furnace tube temperatures to 880 ℃ per minute, pass into nitrogen flow is 13slm simultaneously; (5) maintain the temperature at 880 ℃, passing into wet oxygen flow is 6slm, and wet oxygen temperature is controlled at 75 ℃, continues 16min; (6) passing into nitrogen flow is 15slm, is cooled to 830 ℃, makes earth silicon mask.
Embodiment 3
Wet oxidation is prepared a method for earth silicon mask, it is characterized in that it comprises the following steps: (1) sends the silicon chip of making herbs into wool into wet oxidation diffusion furnace reaction boiler tube, and furnace tube temperature is heated to 780 ℃ in 10min, passes into nitrogen 7.5slm simultaneously; (2) pass into nitrogen flow 6.5slm, oxygen flow 500sccm, nitrogen carries phosphorus oxychloride gas flow 1650sccm, continues 15min:(3) and pass into wet oxygen flow 2980sccm, continue 10min; (4) with 4 ℃ of speed rising furnace tube temperatures to 890 ℃ per minute, pass into nitrogen flow is 11slm simultaneously; (5) maintain the temperature at 890 ℃, passing into wet oxygen flow is 6.7slm, and wet oxygen temperature is controlled at 70 ℃, continues 17min; (6) passing into nitrogen flow is 19slm, is cooled to 830 ℃, makes earth silicon mask.
Claims (5)
1. wet oxidation is prepared a method for earth silicon mask, it is characterized in that it comprises the following steps:
(1) silicon chip of making herbs into wool is sent into wet oxidation diffusion furnace reaction boiler tube, furnace tube temperature is heated to 770-850 ℃ in 10min, passes into nitrogen flow 5-8slm simultaneously, continues 3min;
(2) pass into nitrogen flow 3-7slm, oxygen flow 300-500sccm, nitrogen carries phosphorus oxychloride gas flow 1300-1700sccm, continues 15-18min;
(3) pass into wet oxygen flow 2700-3000sccm, continue 10-12min;
(4) with 4 ℃ of speed rising furnace tube temperatures per minute to 870-890 ℃, pass into nitrogen flow is 10-13slm simultaneously;
(5) maintain the temperature at 870-890 ℃, passing into wet oxygen flow is 5-7slm, and wet oxygen temperature is controlled at 70-80 ℃, continues 15-17min;
(6) passing into nitrogen flow is 15-20slm, is cooled to 830 ℃, makes earth silicon mask.
2. wet oxidation according to claim 1 is prepared the method for earth silicon mask, it is characterized in that in step (1), the interior temperature of boiler tube is heated to 780 ℃.
3. wet oxidation according to claim 1 is prepared the method for earth silicon mask, it is characterized in that in step (2), passing into nitrogen flow is 5slm, oxygen flow 400sccm, and the phosphorus oxychloride gas flow that nitrogen carries is 1500sccm.
4. wet oxidation according to claim 1 is prepared the method for earth silicon mask, it is characterized in that in step (3), wet oxygen flow is 2800sccm, duration 11min.
5. wet oxidation according to claim 1 is prepared the method for earth silicon mask, it is characterized in that in step (5), temperature constant is at 880 ℃, and passing into wet oxygen flow is 6slm, and the temperature of wet oxygen is 75 ℃, and the duration is 16min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210457002.4A CN102938434B (en) | 2012-11-14 | 2012-11-14 | Wet oxidation method for preparing silica masks |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210457002.4A CN102938434B (en) | 2012-11-14 | 2012-11-14 | Wet oxidation method for preparing silica masks |
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| CN102938434A CN102938434A (en) | 2013-02-20 |
| CN102938434B true CN102938434B (en) | 2014-12-10 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108485030A (en) * | 2018-03-28 | 2018-09-04 | 浙江达因包装材料有限公司 | A kind of processing technology of the special shrink film of bowl face |
| CN108831958A (en) * | 2018-06-15 | 2018-11-16 | 常州亿晶光电科技有限公司 | Solar battery sheet wet oxygen diffusion technique |
| CN111293191A (en) * | 2020-02-20 | 2020-06-16 | 浙江正泰太阳能科技有限公司 | Boron diffusion method of solar cell and manufacturing method of solar cell |
| CN113555463A (en) * | 2020-04-23 | 2021-10-26 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of solar cell and solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4518630A (en) * | 1982-02-22 | 1985-05-21 | Siemens Ag | Method for forming silicon oxide films |
| CN101447529A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Silica generation technology during manufacturing process of selective emitter solar cells |
| CN102154708A (en) * | 2010-12-31 | 2011-08-17 | 常州天合光能有限公司 | Method for growing solar cell film |
| CN102544208A (en) * | 2011-12-28 | 2012-07-04 | 晶澳（扬州）太阳能科技有限公司 | High-temperature dry method double-side oxidizing process for crystal silicon wafer |
-
2012
- 2012-11-14 CN CN201210457002.4A patent/CN102938434B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4518630A (en) * | 1982-02-22 | 1985-05-21 | Siemens Ag | Method for forming silicon oxide films |
| CN101447529A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Silica generation technology during manufacturing process of selective emitter solar cells |
| CN102154708A (en) * | 2010-12-31 | 2011-08-17 | 常州天合光能有限公司 | Method for growing solar cell film |
| CN102544208A (en) * | 2011-12-28 | 2012-07-04 | 晶澳（扬州）太阳能科技有限公司 | High-temperature dry method double-side oxidizing process for crystal silicon wafer |
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Effective date of registration: 20170605 Address after: 214203 No. 20 Wen Zhuang Road, Yixing Economic Development Zone, Jiangsu, Wuxi Patentee after: Eastern link photovoltaic (Jiangsu) Co., Ltd. Address before: 214203 Wuxi City, Yixing Province Economic Development Zone, Wen Zhuang Road, No. 6, No. Patentee before: Yixing Magi Solar Technology Co., Ltd., Dongfang Electric Corporation |
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Address after: 214203 No. 20 Wen Zhuang Road, Yixing Economic Development Zone, Jiangsu, Wuxi Patentee after: Huansheng photovoltaic (Jiangsu) Co., Ltd Address before: 214203 No. 20 Wen Zhuang Road, Yixing Economic Development Zone, Jiangsu, Wuxi Patentee before: Eastern link photovoltaic (Jiangsu) Co., Ltd. |
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