CN101937928A - Silicon controlled rectifier structure capable of eliminating hazards of punching through lithography pinholes and production method thereof - Google Patents
Silicon controlled rectifier structure capable of eliminating hazards of punching through lithography pinholes and production method thereof Download PDFInfo
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- CN101937928A CN101937928A CN 201010212163 CN201010212163A CN101937928A CN 101937928 A CN101937928 A CN 101937928A CN 201010212163 CN201010212163 CN 201010212163 CN 201010212163 A CN201010212163 A CN 201010212163A CN 101937928 A CN101937928 A CN 101937928A
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Abstract
The invention relates to a silicon controlled rectifier structure capable of eliminating hazards of lithography pinholes, which comprises a silicon controlled rectifier sheet and is characterized in that a primary oxide layer, a secondary oxide layer and boron diffusion punching-through rings are generated on the silicon controlled rectifier sheet, a plurality of primary pinholes are produced on the primary oxide layer by lithography, and the primary oxide layer does not exist in the position of each pinhole; the secondary oxide layer is covered on the primary oxide layer and the primary pinholes, a plurality of secondary pinholes are produced on the secondary oxide layer by lithography, the secondary oxide layer does not exist in the position of each secondary pinhole, each secondary pinhole does not penetrate the primary oxide layer, the boron diffusion punching-through rings are arranged on the left sides and the right sides of the primary oxide layer and the secondary oxide layer, and the thickness of the secondary oxide layer is smaller than that of the primary oxide layer; and the method comprises three steps of growth of the thicker primary oxide layer, primary lithography of the punching-through rings, secondary oxidation and secondary lithography. The structure and the method have the advantages of thoroughly eliminating the hazards of the pinholes and greatly improving the batch qualification rate of silicon controlled rectifier products.
Description
Technical field
The present invention relates to a kind of SCR structure of eliminating the harm of break-through photoetching pin hole.
The invention still further relates to a kind of production method of eliminating the SCR structure of break-through photoetching pin hole harm.
Background technology
Because the purification horizontal factor of factory, particles such as dust particle have caused very big influence to photoetching quality, and dust particle, other granules and soft flocks etc. have dropped on glued membrane or the reticle, all can form pin hole.Behind the photoetching corrosion, oxide layer is corroded herein, makes that herein the barrier action to boron diffusion disappears, and causes boron penetration in growing base area, forms spike, and the actual effective length of growing base area shortens, and voltage reduces even damage.Therefore press for searching new method and structure to address the above problem.
Summary of the invention
The purpose of this invention is to provide a kind of SCR structure of eliminating the harm of break-through photoetching pin hole.
Another object of the present invention provides a kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole.
The technical solution used in the present invention is:
A kind of SCR structure of eliminating the harm of photoetching pin hole, comprise controlled silicon chip, generate once oxide layer, secondary oxidation layer and boron diffusion break-through ring on the described controlled silicon chip, photoetching produces on the described once oxidation layer a plurality of pin holes, and described each pin hole place does not have oxide layer one time; Described secondary oxidation layer is covered on once oxidation layer and the pin hole, described secondary oxidation layer photoetching produces a plurality of secondary pin holes, described each secondary pin hole place does not have the secondary oxidation layer but does not penetrate the once oxidation layer, and described boron diffusion break-through is located on the left and right sides of once oxidation layer and secondary oxidation layer.
Described secondary oxidation layer thickness is less than the once oxidation layer thickness.
A kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole comprises thicker once oxidation layer, photoetching break-through ring, secondary oxidation and the secondary lithography step of growth one deck,
The once oxidation layer step that described growth one deck is thicker is: place high temperature dispersing furnace to carry out oxidation controlled silicon chip, in oxidizing temperature is under 1150 ± 20 degree, at first carried out dry-oxygen oxidation 1-3 hour, carried out then wet-oxygen oxidation 8-10 hour, carried out again at last dry-oxygen oxidation 1-3 hour, and realized that the once oxidation layer thickness of controlled silicon chip reached the 1.6-2.0 micron;
A described photoetching break-through ring step is: the controlled silicon chip that will generate behind the once oxidation places on the double face photoetching machine, behind positive back side reticle figure aligning, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that break-through ring internal oxidation layer is thoroughly eroded, the photoetching generation has a plurality of pin holes on the once oxidation layer on the controlled silicon chip at this moment, and described each pin hole place does not have oxide layer one time;
Described secondary oxidation step is: place high temperature dispersing furnace to carry out oxidation the controlled silicon chip after the photoetching, in oxidizing temperature is under 1150 ± 20 degree, at first carried out dry-oxygen oxidation 1-3 hour, carried out then wet-oxygen oxidation 4-6 hour, carried out again at last dry-oxygen oxidation 1-3 hour, the secondary oxidation layer thickness of realizing controlled silicon chip reaches the 0.6-1.0 micron, and described secondary oxidation layer is covered on once oxidation layer, pin hole and the break-through ring;
Described secondary lithography step is: the controlled silicon chip that will generate behind the secondary oxidation places on the single face mask aligner, utilize the reticle in the photoetching break-through ring step one time, behind the pattern alignment of the positive back side of controlled silicon chip, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that secondary oxidation layer in the break-through ring is thoroughly eroded, secondary oxidation layer photoetching on the described controlled silicon chip produces a plurality of secondary pin holes, and described each secondary pin hole place does not have the secondary oxidation layer but do not penetrate the once oxidation layer.
Described wet-oxygen oxidation is the synthetic oxidation of steam oxidation or hydrogen-oxygen, and the bath temperature during described steam oxidation is the 90-95 degree, and the oxygen gas flow rate of taking steam is 1.2-2L/ minute; The speed that feeds hydrogen when described hydrogen-oxygen synthesizes oxidation is 2.5-3.5L/ minute, and the speed of aerating oxygen is 1.8-2.5L/ minute.
Advantage of the present invention is: thoroughly eliminated pin hole harm, improved controllable silicon product batches qualification rate greatly.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Wherein: 1, controlled silicon chip, 2, the once oxidation layer, 3, the secondary oxidation layer, 4, pin holes, 5, the secondary pin hole, 6, the break-through ring.
Embodiment
Embodiment 1
As shown in Figure 1, a kind of SCR structure of eliminating the harm of break-through photoetching pin hole of the present invention, comprise controlled silicon chip 1, generate once oxide layer 2, secondary oxidation layer 3 and break-through ring 6 on the controlled silicon chip 1, photoetching produces on the once oxidation layer 2 a plurality of pin holes 4, and each pin hole 4 place does not have oxide layer 2 one time; Secondary oxidation layer 3 is covered on once oxidation layer 2 and the pin hole 4,3 photoetching of secondary oxidation layer produce a plurality of secondary pin holes 5, each secondary pin hole 5 place does not have secondary oxidation layer 3 but does not penetrate once oxidation layer 2, boron diffusion break-through ring 6 is located at the left and right sides of once oxidation layer 2 and secondary oxidation layer 3, and secondary oxidation 3 layer thicknesses are less than once oxidation layer 2 thickness.
A kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole comprises thicker once oxidation layer, photoetching break-through ring, secondary oxidation and the secondary lithography step of growth one deck,
The once oxidation layer step that described growth one deck is thicker is: place high temperature dispersing furnace to carry out oxidation controlled silicon chip, in oxidizing temperature is under 1130 degree, at first carried out dry-oxygen oxidation 1 hour, carried out wet-oxygen oxidation then 8 hours, carried out dry-oxygen oxidation again 1 hour at last, realize that the once oxidation layer thickness of controlled silicon chip reaches 1.6 microns;
A described photoetching break-through ring step is: the controlled silicon chip that will generate behind the once oxidation places on the double face photoetching machine, behind positive back side reticle figure aligning, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that break-through ring internal oxidation layer is thoroughly eroded, the photoetching generation has a plurality of pin holes on the once oxidation layer on the controlled silicon chip at this moment, and described each pin hole place does not have oxide layer one time;
Described secondary oxidation step is: place high temperature dispersing furnace to carry out oxidation the controlled silicon chip after the photoetching, in oxidizing temperature is under 1130 degree, at first carried out dry-oxygen oxidation 1 hour, carried out wet-oxygen oxidation then 4 hours, carried out dry-oxygen oxidation again 1 hour at last, the secondary oxidation layer thickness of realizing controlled silicon chip reaches 0.6 micron, and described secondary oxidation layer is covered on once oxidation layer, pin hole and the break-through ring;
Described secondary lithography step is: the controlled silicon chip that will generate behind the secondary oxidation places on the single face mask aligner, utilize the reticle in the photoetching break-through ring step one time, behind the pattern alignment of the positive back side of controlled silicon chip, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that secondary oxidation layer in the break-through ring is thoroughly eroded, secondary oxidation layer photoetching on the described controlled silicon chip produces a plurality of secondary pin holes, and described each secondary pin hole place does not have the secondary oxidation layer but do not penetrate the once oxidation layer.
Described wet-oxygen oxidation is the synthetic oxidation of steam oxidation or hydrogen-oxygen, and the bath temperature during described steam oxidation is 90 degree, and the oxygen gas flow rate of taking steam is 1.2L/ minute; The speed that feeds hydrogen when described hydrogen-oxygen synthesizes oxidation is 2.5L/ minute, and the speed of aerating oxygen is 1.8L/ minute.
Advantage of the present invention is: thoroughly eliminated pin hole harm, improved controllable silicon product batches qualification rate greatly.
Embodiment 2
A kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole comprises thicker once oxidation layer, photoetching break-through ring, secondary oxidation and the secondary lithography step of growth one deck,
The once oxidation layer step that described growth one deck is thicker is: place high temperature dispersing furnace to carry out oxidation controlled silicon chip, in oxidizing temperature is under 1170 degree, at first carried out dry-oxygen oxidation 3 hours, carried out wet-oxygen oxidation then 10 hours, carried out dry-oxygen oxidation again 3 hours at last, realize that the once oxidation layer thickness of controlled silicon chip reaches 2.0 microns;
A described photoetching break-through ring step is: the controlled silicon chip that will generate behind the once oxidation places on the double face photoetching machine, behind positive back side reticle figure aligning, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that break-through ring internal oxidation layer is thoroughly eroded, the photoetching generation has a plurality of pin holes on the once oxidation layer on the controlled silicon chip at this moment, and described each pin hole place does not have oxide layer one time;
Described secondary oxidation step is: place high temperature dispersing furnace to carry out oxidation the controlled silicon chip after the photoetching, in oxidizing temperature is under 1170 degree, at first carried out dry-oxygen oxidation 3 hours, carried out wet-oxygen oxidation then 6 hours, carried out dry-oxygen oxidation again 3 hours at last, the secondary oxidation layer thickness of realizing controlled silicon chip reaches 1.0 microns, and described secondary oxidation layer is covered on once oxidation layer, pin hole and the break-through ring;
Described secondary lithography step is: the controlled silicon chip that will generate behind the secondary oxidation places on the single face mask aligner, utilize the reticle in the photoetching break-through ring step one time, behind the pattern alignment of the positive back side of controlled silicon chip, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that secondary oxidation layer in the break-through ring is thoroughly eroded, secondary oxidation layer photoetching on the described controlled silicon chip produces a plurality of secondary pin holes, and described each secondary pin hole place does not have the secondary oxidation layer but do not penetrate the once oxidation layer.
Wet-oxygen oxidation is the synthetic oxidation of steam oxidation or hydrogen-oxygen, and the bath temperature during described steam oxidation is 95 degree, and the oxygen gas flow rate of taking steam is 2L/ minute; The speed that feeds hydrogen when described hydrogen-oxygen synthesizes oxidation is 3.5L/ minute, and the speed of aerating oxygen is 2.5L/ minute.All the other are with embodiment 1.
Embodiment 3
A kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole comprises thicker once oxidation layer, photoetching break-through ring, secondary oxidation and the secondary lithography step of growth one deck,
The once oxidation layer step that described growth one deck is thicker is: place high temperature dispersing furnace to carry out oxidation controlled silicon chip, in oxidizing temperature is under 1150 degree, at first carried out dry-oxygen oxidation 2 hours, carried out wet-oxygen oxidation then 9 hours, carried out dry-oxygen oxidation again 2 hours at last, realize that the once oxidation layer thickness of controlled silicon chip reaches 1.8 microns;
A described photoetching break-through ring step is: the controlled silicon chip that will generate behind the once oxidation places on the double face photoetching machine, behind positive back side reticle figure aligning, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that break-through ring internal oxidation layer is thoroughly eroded, the photoetching generation has a plurality of pin holes on the once oxidation layer on the controlled silicon chip at this moment, and described each pin hole place does not have oxide layer one time;
Described secondary oxidation step is: place high temperature dispersing furnace to carry out oxidation the controlled silicon chip after the photoetching, in oxidizing temperature is under 1150 degree, at first carried out dry-oxygen oxidation 2 hours, carried out wet-oxygen oxidation then 5 hours, carried out dry-oxygen oxidation again 2 hours at last, the secondary oxidation layer thickness of realizing controlled silicon chip reaches 0.8 micron, and described secondary oxidation layer is covered on once oxidation layer, pin hole and the break-through ring;
Described secondary lithography step is: the controlled silicon chip that will generate behind the secondary oxidation places on the single face mask aligner, utilize the reticle in the photoetching break-through ring step one time, behind the pattern alignment of the positive back side of controlled silicon chip, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that secondary oxidation layer in the break-through ring is thoroughly eroded, secondary oxidation layer photoetching on the described controlled silicon chip produces a plurality of secondary pin holes, and described each secondary pin hole place does not have the secondary oxidation layer but do not penetrate the once oxidation layer.
Described wet-oxygen oxidation is the synthetic oxidation of steam oxidation or hydrogen-oxygen, and the bath temperature during described steam oxidation is 93 degree, and the oxygen gas flow rate of taking steam is 1.6L/ minute; The speed that feeds hydrogen when described hydrogen-oxygen synthesizes oxidation is 3L/ minute, and the speed of aerating oxygen is 2.2L/ minute.All the other are with embodiment 1.
Claims (4)
1. eliminate the SCR structure that the photoetching pin hole endangers for one kind, comprise controlled silicon chip, it is characterized in that generating on the described controlled silicon chip once oxide layer, secondary oxidation layer and boron diffusion break-through ring, photoetching produces on the described once oxidation layer a plurality of pin holes, and described each pin hole place does not have oxide layer one time; Described secondary oxidation layer is covered on once oxidation layer and the pin hole, described secondary oxidation layer photoetching produces a plurality of secondary pin holes, described each secondary pin hole place does not have the secondary oxidation layer but does not penetrate the once oxidation layer, and described boron diffusion break-through is located on the left and right sides of once oxidation layer and secondary oxidation layer.
2. a kind of SCR structure of eliminating the harm of photoetching pin hole according to claim 1 is characterized in that described secondary oxidation layer thickness is less than the once oxidation layer thickness.
3. eliminate the SCR structure production method that break-through photoetching pin hole endangers for one kind, it is characterized in that: comprise thicker once oxidation layer, photoetching break-through ring, secondary oxidation and the secondary lithography step of growth one deck,
The once oxidation layer step that described growth one deck is thicker is: place high temperature dispersing furnace to carry out oxidation controlled silicon chip, in oxidizing temperature is under 1150 ± 20 degree, at first carried out dry-oxygen oxidation 1-3 hour, carried out then wet-oxygen oxidation 8-10 hour, carried out again at last dry-oxygen oxidation 1-3 hour, and realized that the once oxidation layer thickness of controlled silicon chip reached the 1.6-2.0 micron;
A described photoetching break-through ring step is: the controlled silicon chip that will generate behind the once oxidation places on the double face photoetching machine, behind positive back side reticle figure aligning, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that break-through ring internal oxidation layer is thoroughly eroded, the photoetching generation has a plurality of pin holes on the once oxidation layer on the controlled silicon chip at this moment, and described each pin hole place does not have oxide layer one time;
Described secondary oxidation step is: place high temperature dispersing furnace to carry out oxidation the controlled silicon chip after the photoetching, in oxidizing temperature is under 1150 ± 20 degree, at first carried out dry-oxygen oxidation 1-3 hour, carried out then wet-oxygen oxidation 4-6 hour, carried out again at last dry-oxygen oxidation 1-3 hour, the secondary oxidation layer thickness of realizing controlled silicon chip reaches the 0.6-1.0 micron, and described secondary oxidation layer is covered on once oxidation layer, pin hole and the break-through ring;
Described secondary lithography step is: the controlled silicon chip that will generate behind the secondary oxidation places on the single face mask aligner, utilize the reticle in the photoetching break-through ring step one time, behind the pattern alignment of the positive back side of controlled silicon chip, controlled silicon chip is carried out photoetching, utilize chemical corrosion liquid that secondary oxidation layer in the break-through ring is thoroughly eroded, secondary oxidation layer photoetching on the described controlled silicon chip produces a plurality of secondary pin holes, and described each secondary pin hole place does not have the secondary oxidation layer but do not penetrate the once oxidation layer.
4. a kind of SCR structure production method of eliminating the harm of break-through photoetching pin hole according to claim 3, it is characterized in that: described wet-oxygen oxidation is the synthetic oxidation of steam oxidation or hydrogen-oxygen, bath temperature during described steam oxidation is the 90-95 degree, and the oxygen gas flow rate of taking steam is 1.2-2L/ minute; The speed that feeds hydrogen when described hydrogen-oxygen synthesizes oxidation is 2.5-3.5L/ minute, and the speed of aerating oxygen is 1.8-2.5L/ minute.
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| CN2010102121638A CN101937928B (en) | 2010-06-28 | 2010-06-28 | Production method of cilicon controlled rectifier structure capable of eliminating hazards of punching through lithography pinholes |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102205943A (en) * | 2011-04-11 | 2011-10-05 | 北京理工大学 | Preparation method of monocrystalline silicon nanostructure |
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| DE2831035A1 (en) * | 1977-07-15 | 1979-01-18 | Mitsubishi Electric Corp | METHOD FOR PRODUCING A HEAT-SENSITIVE SEMI-CONDUCTOR SWITCHING ELEMENT |
| CN1231510A (en) * | 1997-10-27 | 1999-10-13 | 世界先进积体电路股份有限公司 | Method for eliminating pin-hole on silicon nitride protective layer |
| CN1235380A (en) * | 1999-04-07 | 1999-11-17 | 赵振华 | Structure and manufacture of small power thysistor |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2831035A1 (en) * | 1977-07-15 | 1979-01-18 | Mitsubishi Electric Corp | METHOD FOR PRODUCING A HEAT-SENSITIVE SEMI-CONDUCTOR SWITCHING ELEMENT |
| CN1231510A (en) * | 1997-10-27 | 1999-10-13 | 世界先进积体电路股份有限公司 | Method for eliminating pin-hole on silicon nitride protective layer |
| CN1235380A (en) * | 1999-04-07 | 1999-11-17 | 赵振华 | Structure and manufacture of small power thysistor |
Non-Patent Citations (1)
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| 《微电子学与计算机》 19730201 沈文正 《光刻针孔的检查及消除的方法》 7-11 1-4 , 2 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102205943A (en) * | 2011-04-11 | 2011-10-05 | 北京理工大学 | Preparation method of monocrystalline silicon nanostructure |
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