CN201766078U

CN201766078U - Silicon controlled rectifier structure capable of eliminating harm of photoetching pinholes

Info

Publication number: CN201766078U
Application number: CN2010202408328U
Authority: CN
Inventors: 耿开远; 周健; 朱法扬
Original assignee: QIDONG JILAI ELECTRONIC CO Ltd
Current assignee: QIDONG JILAI ELECTRONIC CO Ltd
Priority date: 2010-06-28
Filing date: 2010-06-28
Publication date: 2011-03-16
Anticipated expiration: 2020-06-28

Abstract

The utility model relates to a silicon controlled rectifier structure capable of eliminating harm of photoetching pinholes, which comprises a silicon controlled chip, and is characterized in that: a primary oxide layer, a secondary oxide layer and boron diffusion penetrating rings are generated on the silicon controlled chip, and a plurality of primary pinholes are generated on the primary oxide layer by photoetching; the primary oxide layer is not arranged at each primary pinhole, and the secondary oxide layer covers the primary oxide layer and the primary pinholes; a plurality of secondary pinholes are generated on the secondary oxide layer, and the secondary oxide layer is not arranged at each secondary pinhole which does not penetrate through the primary oxide layer; and the boron diffusion penetrating rings are arranged at the left side and the right side of the primary oxide layer and the secondary oxide layer; and the thickness of the secondary oxide layer is less than that of the primary oxide layer. The utility model has the advantages of thoroughly eliminating the harm of the pinholes and greatly improving the pass rate of silicon controlled rectifier product batches.

Description

A kind of SCR structure of eliminating the harm of photoetching pin hole

Technical field

The utility model relates to a kind of SCR structure, relates in particular to a kind of SCR structure of eliminating the harm of photoetching pin hole.

Background technology

Because the purification horizontal factor of factory, particles such as dust particle have caused very big influence to photoetching quality, and dust particle, other granules and soft flocks etc. have dropped on glued membrane or the reticle, all can form pin hole.Behind the photoetching corrosion, oxide layer is corroded herein, makes that herein the barrier action to boron diffusion disappears, and causes boron penetration in growing base area, forms spike, and the actual effective length of growing base area shortens, and voltage reduces even damage.Therefore press for and seek new SCR structure to address the above problem.

The utility model content

The purpose of this utility model provides a kind of SCR structure of eliminating the harm of photoetching pin hole.

The technical solution adopted in the utility model is:

A kind of SCR structure of eliminating the harm of photoetching pin hole, comprise controlled silicon chip, generate once oxide layer, secondary oxidation layer and boron diffusion break-through ring on the described controlled silicon chip, photoetching produces on the described once oxidation layer a plurality of pin holes, and described each pin hole place does not have oxide layer one time; Described secondary oxidation layer is covered on once oxidation layer and the pin hole, described secondary oxidation layer photoetching produces a plurality of secondary pin holes, described each secondary pin hole place does not have the secondary oxidation layer but does not penetrate the once oxidation layer, and described boron diffusion break-through is located on the left and right sides of once oxidation layer and secondary oxidation layer.

Described secondary oxidation layer thickness is less than the once oxidation layer thickness.

The utility model has the advantages that: thoroughly eliminated pin hole harm, improved controllable silicon product batches qualification rate greatly.

Description of drawings

Below in conjunction with the drawings and specific embodiments the utility model is described in further detail:

Fig. 1 is a structural representation of the present utility model.

Wherein: 1, controlled silicon chip, 2, the once oxidation layer, 3, the secondary oxidation layer, 4, pin holes, 5, the secondary pin hole, 6, boron diffusion break-through ring.

Embodiment

As shown in Figure 1, a kind of SCR structure of eliminating the harm of photoetching pin hole of the present utility model, comprise controlled silicon chip 1, generate once oxide layer 2, secondary oxidation layer 3 and boron diffusion break-through ring 6 on the controlled silicon chip 1, photoetching produces on the once oxidation layer 2 a plurality of pin holes 4, and each pin hole 4 place does not have oxide layer 2 one time; Secondary oxidation layer 3 is covered on once oxidation layer 2 and the pin hole 4,3 photoetching of secondary oxidation layer produce a plurality of secondary pin holes 5, each secondary pin hole 5 place does not have secondary oxidation layer 3 but does not penetrate once oxidation layer 2, and boron diffusion break-through ring 6 is located at the left and right sides of once oxidation layer 2 and secondary oxidation layer 3.

Because dust particle etc. may all drop on the same point in Twi-lithography hardly, and secondary oxidation layer 3 is thin, and etching time is short, so " pin hole " that the secondary photoetching forms and can't the heavy damage oxide layer, thereby can shield boron diffusion, oxide layer just is equivalent to not have any pin hole.Thereby solved the problem of pin hole in the photoetching process, improved batch qualification rate of product greatly.

The utility model has the advantages that: thoroughly eliminated pin hole harm, greatly improved controllable silicon product batches qualification rate.

Claims

1. eliminate the SCR structure that the photoetching pin hole endangers for one kind, comprise controlled silicon chip, it is characterized in that generating on the described controlled silicon chip once oxide layer, secondary oxidation layer and boron diffusion break-through ring, photoetching produces on the described once oxidation layer a plurality of pin holes, and described each pin hole place does not have oxide layer one time; Described secondary oxidation layer is covered on once oxidation layer and the pin hole, described secondary oxidation layer photoetching produces a plurality of secondary pin holes, described each secondary pin hole place does not have the secondary oxidation layer but does not penetrate the once oxidation layer, and described boron diffusion break-through is located on the left and right sides of once oxidation layer and secondary oxidation layer.

2. a kind of SCR structure of eliminating the harm of photoetching pin hole according to claim 1 is characterized in that described secondary oxidation layer thickness is less than the once oxidation layer thickness.