CN101930963B - Segment difference type ceramic copper-clad plate unit and manufacturing method thereof - Google Patents

Segment difference type ceramic copper-clad plate unit and manufacturing method thereof Download PDF

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Publication number
CN101930963B
CN101930963B CN 200910150208 CN200910150208A CN101930963B CN 101930963 B CN101930963 B CN 101930963B CN 200910150208 CN200910150208 CN 200910150208 CN 200910150208 A CN200910150208 A CN 200910150208A CN 101930963 B CN101930963 B CN 101930963B
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copper
ceramic
layer
clad plate
ceramic layer
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CN101930963A (en
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江文忠
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Tong Hsing Electronic Industries Ltd
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High Conduction Scientific Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention relates to a segment difference type ceramic copper-clad plate unit comprising a ceramic copper-clad plate and a heat radiating unit, wherein the ceramic copper-clad plate comprises a first ceramic layer, a first copper-clad layer and a second copper-clad layer, wherein the first ceramic layer is provided with a first surface and a second surface which are inversely arranged; the first copper-clad layer is formed on the first surface and forms a preset pattern; the second copper-clad layer is formed on the second surface; the first ceramic layer further comprises an opening penetrating through the surfaces; the preset pattern is provided with an opening area opposite to the opening and isolated into at least two lead areas; the heat radiating unit is provided with a heat radiating block arranged on the opening, and the heat transfer rate of the heat radiating block is higher than that of the first ceramic layer. Besides, the invention also provides a manufacturing method of the segment difference type ceramic copper-clad plate unit.

Description

Segment difference type ceramic copper-clad plate group and manufacturing approach thereof
Technical field
The present invention relates to a kind of ceramic copper-clad plate, particularly relate to a kind of ceramic copper-clad plate group and manufacturing approach thereof.
Background technology
Existing ceramic copper-clad plate is mainly brought as ceramic wiring board and is used.Aforementioned ceramic copper-clad plate is to utilize direct copper joining technique (direct copper bonding, be called for short DCB), with ceramic layer (like, Al 2O 3, AlN, TiO 2, ZrO 2, ZnO, 2MgOSiO 2, or BaTiO 3) with Copper Foil eutectic bond and form a sandwich structure.Electric insulating quality by aforementioned ceramic layer makes a plurality of electronics spare parts that are arranged on this ceramic copper-clad plate be able to be electrically insulated from each other.
Consult Fig. 1, the manufacturing approach of existing a kind of ceramic copper-clad plate 1 that uses as ceramic circuit board comprises following steps:
(A) ceramic layer, one first Copper Foil 11 and one second Copper Foil 12 are provided;
(B) in upper and lower surface this first and second Copper Foil 11,12 of difference eutectic bond of this ceramic layer 10; And
(C) on this first Copper Foil 11, form two electrical isolated copper conductors 111 to accomplish this ceramic copper-clad plate 1.
Consult Fig. 2, this ceramic copper-clad plate 1 is brought, and (ceramic circuit board like, a horizontal conducting LED (light emitting diode is called for short LED) 91 uses as the electronics spare part is set.The ceramic layer 10 of this ceramic copper-clad plate 1 generally be via scraper be shaped (tape casting), that casting (slip casting) or powder are pressed into shape traditional ceramics processing procedures such as (pressing) is obtained.The thickness of the prepared ceramic layer 10 of aforementioned conventional ceramic processing generally is the restriction for fear of processing procedure; Therefore, the thickness of this ceramic layer 10 is greater than 0.2mm at least.This ceramic layer 10 thickness for this horizontal conducting LED 91 is blocked up, and the high heat that causes this horizontal conducting LED 91 when running, to be produced can't be passed to the external world effectively.Therefore, not only reduce the useful life of electronics spare part, also influence the element efficiency of electronics spare part.
Can know that through above-mentioned explanation the heat dissipation problem that improves ceramic copper-clad plate is the required improved problem of this art so as to promoting the useful life and the element efficiency of electronics spare part.
Summary of the invention
The object of the invention is that a kind of segment difference type ceramic copper-clad plate group is being provided.
Another object of the present invention is in the manufacturing approach that a kind of segment difference type ceramic copper-clad plate group is provided.
Another purpose of the present invention is in the manufacturing approach that a kind of segment difference type ceramic copper-clad plate group is provided.
Another again purpose of the present invention is in the manufacturing approach that a kind of segment difference type ceramic copper-clad plate group is provided.
Segment difference type ceramic copper-clad plate group of the present invention comprises: a ceramic copper-clad plate and a heat-sink unit.This ceramic copper-clad plate have one include a first surface and a second surface of opposite setting first ceramic layer, be formed at this first surface and be formed with first of a predetermined pattern and cover the copper layer, and one be formed at second of this second surface and cover the copper layer.This first ceramic layer more includes one and runs through these surperficial openings.This first cover the copper layer predetermined pattern have one and correspondingly with this opening be provided with and completely cut off the open region that at least two conductor sections.This heat-sink unit has one and is arranged at the interior radiating block of this opening.Wherein, the heat biography rate (thermal conductivity) that defines this first ceramic layer and this radiating block is respectively K1 and K2, and K2>K1.
In addition, the manufacturing approach of segment difference type ceramic copper-clad plate group of the present invention comprises following steps:
(a1) in one first ceramic layer form one run through this first ceramic layer a first surface and an opening in contrast to the second surface of this first surface;
(b1) in this first and second surface respectively eutectic engage one first and cover copper layer and one second and cover the copper layer;
(c1) first cover on the copper layer and to form the predetermined pattern that has an open region and completely cut off at least two conductor sections in this, so as to the opening of open this first ceramic layer; And
(d1) implementing heat treatment engages this with eutectic in the opening of this first ceramic layer and second covers the heat-sink unit that copper layer and has a radiating block.
Again, the manufacturing approach of segment difference type ceramic copper-clad plate group of the present invention comprises following steps:
(a2) engage one first in a first surface eutectic of one first ceramic layer and cover the copper layer;
(b2) first cover on the copper layer and to form the predetermined pattern that has an open region and completely cut off at least two conductor sections in this;
(c2) form one in this first ceramic layer and run through this first surface and an opening in contrast to the second surface of this first surface; And
(d2) implement heat treatment and cover the copper layer, and eutectic engages this and second covers the heat-sink unit that copper layer and has a radiating block in the opening of this first ceramic layer to engage one second in this second surface eutectic.
In addition, the manufacturing approach of segment difference type ceramic copper-clad plate group of the present invention comprises following steps:
(a3) in one first ceramic layer form one run through this first ceramic layer a first surface and an opening in contrast to the second surface of this first surface;
(b3) implement heat treatment with in this first and second surface respectively eutectic engage one first and cover copper layer and one second and cover the copper layer, and eutectic joint this first and second covers the heat-sink unit that copper layer and has a radiating block in the opening of this first ceramic layer; And
(c3) first cover on the copper layer and to form the predetermined pattern that has an open region and completely cut off at least two conductor sections in this.
Wherein, this first ceramic layer and the heat biography rate of this radiating block that define in the above-mentioned manufacturing approach of the present invention are respectively K1 and K2, and K2>K1.
Beneficial effect of the present invention is: the heat dissipation problem that improves ceramic copper-clad plate is so as to promoting the useful life and the element efficiency of electronics spare part.
Description of drawings
Fig. 1 is a making schematic flow sheet, and the manufacturing approach of existing a kind of ceramic copper-clad plate is described;
Fig. 2 is a partial schematic sectional view, and the form that is applied to a horizontal conducting LED by the prepared ceramic copper-clad plate of Fig. 1 is described;
Fig. 3 is a partial schematic sectional view, explains that one first preferred embodiment of ceramic copper-clad plate group of the present invention is applied to the form of this horizontal conducting LED;
Fig. 4 is a making schematic flow sheet, and one first preferred embodiment of the manufacturing approach of ceramic copper-clad plate group of the present invention is described;
Fig. 5 is a making schematic flow sheet, and one second preferred embodiment of the manufacturing approach of ceramic copper-clad plate group of the present invention is described;
Fig. 6 is a partial schematic sectional view, explains that one second preferred embodiment of ceramic copper-clad plate group of the present invention is applied to the form of a vertically conducting LED; And
Fig. 7 is a making schematic flow sheet, and one the 3rd preferred embodiment of the manufacturing approach of ceramic copper-clad plate group of the present invention is described.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is elaborated:
As shown in Figure 3; One first preferred embodiment of segment difference type ceramic copper-clad plate group of the present invention comprises: a ceramic copper-clad plate and a heat-sink unit 5 applicable to electrically connecting one electronics spare part (this of goods of the present invention first preferred embodiment is to illustrate with this horizontal conducting LED 91) at least.
This ceramic copper-clad plate have one include a first surface 21 and a second surface 22 of opposite setting first ceramic layer 2, be formed at this first surface 21 and be formed with first of a predetermined pattern and cover copper layer 3, and one be formed at second of this second surface 22 and cover copper layer 4.This first ceramic layer 2 more includes one and runs through these openings 20 of surperficial 21,22.In first preferred embodiment of these goods of the present invention, this first cover copper layer 3 predetermined pattern have be provided with and the open regions 31 of open this opening 20 corresponding with the opening of this first ceramic layer 2 20, and this open region 31 completely cuts off at least two conductor sections 32.But the open region 31 of first preferred embodiment of these goods of the present invention can also be to completely cut off plural conductor section to electrically connect a plurality of electronics spare parts (figure does not show).
This heat-sink unit 5 has the radiating block 51 that is arranged in this opening 20, and one is folded in second ceramic layer 52 that this radiating block 51 and this second covers between the copper layer 4.Be applicable to that second ceramic layer 52 of the present invention can be aluminium oxide (Al 2O 3), aluminium nitride (AlN) or titanium oxide (TiO 2).
What deserves to be mentioned is that here the bottom of the electronics spare part on first preferred embodiment that is arranged at these goods of the present invention is insulator when (like, this horizontal conducting LED 91), then can omit this second ceramic layer 52; Otherwise, the bottom of the electronics spare part on first preferred embodiment that is arranged at these goods of the present invention be conductor (as, vertically conducting LED or concentrating solar battery) time, then can not omit this second ceramic layer 52.Pass not good problem for improving pottery heat, preferably, the thickness that defines this first and second ceramic layer 2,52 is respectively D and d, and this first ceramic layer 2 is respectively K1 and K2 with the heat biography rate of this radiating block 51, and d<D, K2>K1; More preferably, D is at least greater than 0.2mm.Again, what deserves to be mentioned is here that when the thickness d of second ceramic layer 52 of this heat-sink unit 5 is not enough, this second ceramic layer 52 will make breakdown voltages (break down voltage) of this second ceramic layer 52 itself descend significantly because of its inside holes; Therefore, more preferably, d is between 0.02mm~0.2mm; K2>170W/m.K..Be applicable to the copper billet (Cu) that this radiating block 51 of the present invention can be the about 401W/m.K. of K2, the Cu/W alloy of the about 209W/m.K. of K2 or the Cu/Mo alloy of the about 184W/m.K. of K2.
In first preferred embodiment of these goods of the present invention, this second ceramic layer 52 can be via hot melt penetrate (thermal spray), electricity slurry meltallizing plasma sprayings such as (plasma spray) is made; This radiating block 52 is copper billets; It is under a temperature range, to heat-treat with eutectic to engage that second ceramic layer 52 of this heat-sink unit 5 covers copper layer 4 with second of this ceramic copper-clad plate.This temperature range be the fusing point (about 1083 ℃) that is lower than metallic copper and be higher than this second ceramic layer 52 with this second cover the cupric oxide of copper layer 4 eutectic temperature (1065 ℃).
As shown in Figure 4, one first preferred embodiment of the manufacturing approach of segment difference type ceramic copper-clad plate group of the present invention is to form goods as shown in Figure 3, and it comprises following steps:
(a1) form the opening 20 that this runs through first and second surface 21,22 of this first ceramic layer 2 in this first ceramic layer 2;
(b1) in this first and second surface 21,22 respectively eutectic engage this first and second cover copper layer 3,4;
(c1) first cover on the copper layer 3 and to form this predetermined pattern that has this open region 31 and completely cut off these conductor sections 32 in this, so as to the opening 20 of open this first ceramic layer 2; And
(d1) this second covers copper layer 4 and has the heat-sink unit 5 of this radiating block 51 with this with the joint of eutectic in the opening 20 of this first ceramic layer 2 in to implement heat treatment.
In first preferred embodiment of this manufacturing approach of the present invention, it is to be formed with this second ceramic layer 52 that the heat-sink unit 5 of this step (d1) covers between the copper layer 4 in this radiating block 51 and this second; Be applicable to the enforcement means of step (a1) of first preferred embodiment of this manufacturing approach of the present invention, use CO 2Laser is implemented the laser cutting of a laser energy greater than 100W to this first ceramic layer 2, to offer this perforation 20 in this first ceramic layer 2.
What deserves to be mentioned is that here the step (a1) of first preferred embodiment of this manufacturing approach of the present invention is to be fit to form the less opening of size.The opening 20 of this first ceramic layer 2 can be square, circle or polygon.Illustrate with square; When this opening 20 is oversize; To make this first ceramic layer 2 in the implementation process of this step (b1), produce breakage, and this first cover copper layer 3 also easily because of these opening 20 oversize forming qualities that produce depression and influence the predetermined pattern of this step (c1) because of expanding with heat and contract with cold; Therefore, preferably, the size of this opening 20 is approximately less than 5mm.Before the heat-treatment temperature range of the step (d1) of first preferred embodiment of this manufacturing approach of the present invention has been illustrated in, no longer add to give unnecessary details in this again.
As shown in Figure 5, one second preferred embodiment of the manufacturing approach of segment difference type ceramic copper-clad plate group of the present invention also is to form goods as shown in Figure 3, and it is first preferred embodiment that is same as this manufacturing approach haply, and it does not exist together is to be to comprise following steps:
(a2) engage this in first surface 21 eutectics of this first ceramic layer 2 and first cover copper layer 3;
(b2) first cover on the copper layer 3 and to form this predetermined pattern that has this open region 31 and completely cut off these conductor sections 32 in this;
(c2) form the opening 20 that this runs through this first and second surface 21,22 in this first ceramic layer 3; And
(d2) implement heat treatment and second cover copper layer 4 to engage this in these second surface 22 eutectics, and in the opening 20 of this first ceramic layer 2 in the eutectic joint this second cover copper layer 4 and have the heat-sink unit 5 of this radiating block 51 and this second ceramic layer 52 with this.
What deserves to be mentioned is, because the step (b2) (shaping of predetermined pattern) that is disclosed among Fig. 5 is to implement before in step (c2) (formation of this opening 20) here; Therefore, the step (c2) of second preferred embodiment of this manufacturing approach of the present invention is to be fit to form larger-size opening.Illustrate with square, preferably, opening 20 sizes of second preferred embodiment of this manufacturing approach of the present invention are greater than 5mm.Can be by the prepared ceramic copper-clad plate group of second preferred embodiment of this manufacture method of the present invention because of the expansion of opening 20 sizes of this first ceramic layer 2; And the heat-sink unit 5 that supplies large-size is arranged in it and the heat that increases this electronics spare part (like, this horizontal conducting LED 91) passes usefulness.
As shown in Figure 6; One second preferred embodiment of segment difference type ceramic copper-clad plate group of the present invention is to be same as first preferred embodiment as shown in Figure 3 haply; It does not exist together is to be; This first cover copper layer 3 open region 31 are openings 20 of local open this first ceramic layer 2, and cause wherein contacting of these conductor sections 32 with this radiating block 51; That is to say, this radiating block 51 be hidden in first and second cover copper layer 3, between 4; In addition, second preferred embodiment of goods of the present invention is applicable to this horizontal conducting LED 91 (figure does not show), also applicable to a vertically conducting LED 92.
As shown in Figure 7, one the 3rd preferred embodiment of the manufacturing approach of segment difference type ceramic copper-clad plate group of the present invention is to form goods as shown in Figure 6, and it is the preferred embodiment that is same as these manufacturing approaches haply, and it does not exist together is to be to comprise following steps:
(a3) form the opening 20 that this runs through first and second surface 21,22 of this first ceramic layer 2 in this first ceramic layer 2;
(b3) implement heat treatment with in this first and second surface 21,22 respectively eutectic engage this first and second cover copper layer 3,4, and in the opening 20 of this first ceramic layer 2 in eutectic engage this first and second cover copper layer 3,4 and this has the heat-sink unit 5 of this radiating block 51 and this second ceramic layer 52; And
(c3) first cover on the copper layer 3 and to form this predetermined pattern that has this open region 31 and completely cut off these conductor sections 32 in this.
In these preferred embodiments of the present invention, can be by second ceramic layer 52 that is arranged at the heat-sink unit 5 in this first ceramic layer 2 openings 20, reduce the heat dissipation problem of existing ceramic layer thickness due to excessive (that is d<D); In addition, also can (copper billet, K2>K1) promote the hot transfer efficiency of electronics spare part by the radiating block 51 of the high hot biography rate of this heat-sink unit 5.Therefore, not only promote the useful life of electronics spare part, also increased the element efficiency of electronics spare part.
In sum, segment difference type ceramic copper-clad plate group of the present invention and manufacturing approach thereof can be improved the heat dissipation problem of ceramic copper-clad plate, and can promote the useful life and the element efficiency of electronics spare parts such as light-emitting diode, so can reach the object of the invention really.

Claims (12)

1. segment difference type ceramic copper-clad plate group; Comprise a ceramic copper-clad plate, said ceramic copper-clad plate have one include a first surface and a second surface of opposite setting first ceramic layer, be formed at said first surface and be formed with first of a predetermined pattern and cover copper layer and and be formed at second of said second surface and cover the copper layer; It is characterized in that:
Said segment difference type ceramic copper-clad plate group more comprises a heat-sink unit; And said first ceramic layer more include one run through said first surface and second surface opening; Simultaneously, said first cover the copper layer predetermined pattern have one and correspondingly with said opening be provided with and completely cut off the open region that at least two conductor sections, said heat-sink unit has the radiating block that is arranged in the said opening; Wherein, the heat biography rate of said radiating block is greater than the heat biography rate of said first ceramic layer.
2. segment difference type ceramic copper-clad plate group according to claim 1 is characterized in that:
Said heat-sink unit has more one and is folded in second ceramic layer that said radiating block and said second covers between the copper layer; And the thickness of said first ceramic layer is at least greater than 0.2mm; The thickness of said second ceramic layer is between 0.02mm~0.2mm, and the heat biography rate of said radiating block is greater than 170W/m.K..
3. segment difference type ceramic copper-clad plate group according to claim 2 is characterized in that:
Said second ceramic layer is made by plasma spraying; Said radiating block is a copper billet.
4. segment difference type ceramic copper-clad plate group according to claim 2 is characterized in that:
It is to engage with eutectic via heat treatment that second ceramic layer of said heat-sink unit covers the copper layer with second of said ceramic copper-clad plate.
5. segment difference type ceramic copper-clad plate group according to claim 1 is characterized in that:
Said first covers the opening of open said first ceramic layer of open region of copper layer.
6. segment difference type ceramic copper-clad plate group according to claim 1 is characterized in that:
Said first cover the copper layer open region be the opening of local open said first ceramic layer, and cause wherein contacting of said at least two conductor sections with said radiating block.
7. the manufacturing approach of a segment difference type ceramic copper-clad plate group is characterized in that:
Said manufacturing approach comprises
(a1) in one first ceramic layer form one run through said first ceramic layer a first surface and an opening in contrast to the second surface of said first surface;
(b1) in said first and second surface respectively eutectic engage one first and cover copper layer and one second and cover the copper layer;
(c1) cover on the copper layer in said first and form one and have an open region and completely cut off the predetermined pattern of at least two conductor sections, so as to the opening of open said first ceramic layer; And
(d1) implement heat treatment and engage said second with eutectic in the opening of said first ceramic layer and cover the heat-sink unit that copper layer and has a radiating block,
Wherein, the heat biography rate of said radiating block is greater than the heat biography rate of said first ceramic layer.
8. the manufacturing approach of segment difference type ceramic copper-clad plate group according to claim 7 is characterized in that:
It is to be formed with one second ceramic layer that the heat-sink unit of said step (d1) covers between the copper layer in said radiating block and said second; And the thickness of said first ceramic layer is at least greater than 0.2mm; The thickness of said second ceramic layer is between 0.02mm~0.2mm, and the heat biography rate of said radiating block is greater than 170W/m.K..
9. the manufacturing approach of segment difference type ceramic copper-clad plate group according to claim 8 is characterized in that:
Said second ceramic layer is made by plasma spraying; Said radiating block is a copper billet.
10. the manufacturing approach of a segment difference type ceramic copper-clad plate group is characterized in that:
Said manufacturing approach comprises
(a2) engage one first in a first surface eutectic of one first ceramic layer and cover the copper layer;
(b2) cover on the copper layer in said first and form one and have an open region and completely cut off the predetermined pattern of at least two conductor sections;
(c2) form one in said first ceramic layer and run through a said first surface and an opening in contrast to the second surface of said first surface; And
(d2) implement heat treatment and cover the copper layer, and eutectic engages said second and covers the heat-sink unit that copper layer and has a radiating block in the opening of said first ceramic layer to engage one second in said second surface eutectic,
Wherein, the heat biography rate of said radiating block is greater than the heat biography rate of said first ceramic layer.
11. the manufacturing approach of segment difference type ceramic copper-clad plate group according to claim 10 is characterized in that:
It is to be formed with one second ceramic layer that the heat-sink unit of said step (d2) covers between the copper layer in said radiating block and said second; And the thickness of said first ceramic layer is at least greater than 0.2mm; The thickness of said second ceramic layer is between 0.02mm~0.2mm, and the heat biography rate of said radiating block is greater than 170W/m.K..
12. the manufacturing approach of segment difference type ceramic copper-clad plate group according to claim 11 is characterized in that:
Said second ceramic layer is made by plasma spraying; Said radiating block is a copper billet.
CN 200910150208 2009-06-19 2009-06-19 Segment difference type ceramic copper-clad plate unit and manufacturing method thereof Expired - Fee Related CN101930963B (en)

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CN105633536A (en) * 2014-11-07 2016-06-01 北京北广科技股份有限公司 Enhanced microstrip line power synthesizer
CN106550535B (en) * 2016-07-06 2019-08-27 深圳市微纳科学技术有限公司 It is provided with the multi-layer ceramics printed circuit board and its manufacturing method of heat sink substrate

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Publication number Priority date Publication date Assignee Title
CN201248194Y (en) * 2008-09-01 2009-05-27 常州中英科技有限公司 Ceramic-based copper foil covered board

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201248194Y (en) * 2008-09-01 2009-05-27 常州中英科技有限公司 Ceramic-based copper foil covered board

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