CN101926011B - 发光器件 - Google Patents

发光器件 Download PDF

Info

Publication number
CN101926011B
CN101926011B CN200980102755XA CN200980102755A CN101926011B CN 101926011 B CN101926011 B CN 101926011B CN 200980102755X A CN200980102755X A CN 200980102755XA CN 200980102755 A CN200980102755 A CN 200980102755A CN 101926011 B CN101926011 B CN 101926011B
Authority
CN
China
Prior art keywords
layer
semiconductor layer
light emitting
light
extraction efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200980102755XA
Other languages
English (en)
Chinese (zh)
Other versions
CN101926011A (zh
Inventor
金鲜京
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN101926011A publication Critical patent/CN101926011A/zh
Application granted granted Critical
Publication of CN101926011B publication Critical patent/CN101926011B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

Landscapes

  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
CN200980102755XA 2008-01-21 2009-01-21 发光器件 Active CN101926011B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020080006073A KR101459764B1 (ko) 2008-01-21 2008-01-21 질화물계 발광 소자
KR10-2008-0006073 2008-01-21
PCT/KR2009/000318 WO2009093845A2 (ko) 2008-01-21 2009-01-21 발광소자

Publications (2)

Publication Number Publication Date
CN101926011A CN101926011A (zh) 2010-12-22
CN101926011B true CN101926011B (zh) 2013-01-23

Family

ID=40901544

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980102755XA Active CN101926011B (zh) 2008-01-21 2009-01-21 发光器件

Country Status (6)

Country Link
US (2) US8174040B2 (https=)
EP (1) EP2237332B1 (https=)
JP (1) JP5888854B2 (https=)
KR (1) KR101459764B1 (https=)
CN (1) CN101926011B (https=)
WO (1) WO2009093845A2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
KR101100681B1 (ko) * 2009-09-10 2012-01-03 주식회사 에피밸리 반도체 발광소자
KR101007077B1 (ko) 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
KR101712094B1 (ko) 2009-11-27 2017-03-03 포항공과대학교 산학협력단 질화물갈륨계 수직 발광다이오드 및 그 제조 방법
KR100993094B1 (ko) 2010-02-01 2010-11-08 엘지이노텍 주식회사 발광소자 및 발광소자 패키지
KR100999771B1 (ko) * 2010-02-25 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101028220B1 (ko) * 2010-02-25 2011-04-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101028250B1 (ko) * 2010-02-25 2011-04-11 엘지이노텍 주식회사 발광 소자 및 이를 이용한 발광 소자 패키지
US8084776B2 (en) 2010-02-25 2011-12-27 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and lighting system
KR101047720B1 (ko) * 2010-04-23 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101701510B1 (ko) 2010-07-09 2017-02-01 엘지이노텍 주식회사 발광소자
JP2014103240A (ja) * 2012-11-20 2014-06-05 Stanley Electric Co Ltd 半導体発光素子
JP6190585B2 (ja) * 2012-12-12 2017-08-30 スタンレー電気株式会社 多重量子井戸半導体発光素子
CN105246521A (zh) * 2013-03-15 2016-01-13 雅培心血管系统有限公司 经由球囊递送的交联涂层
KR101521081B1 (ko) * 2013-10-01 2015-05-18 경희대학교 산학협력단 발광 다이오드 패키지
JP6826395B2 (ja) * 2016-08-26 2021-02-03 ローム株式会社 半導体発光素子
KR102555005B1 (ko) * 2016-11-24 2023-07-14 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자의 제조 방법
US11309454B2 (en) * 2018-01-26 2022-04-19 Marubun Corporation Deep ultraviolet LED and method for producing the same
JP2022172792A (ja) * 2021-05-07 2022-11-17 日機装株式会社 窒化物半導体発光素子

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69124338T2 (de) 1990-11-02 1997-07-31 Daido Steel Co Ltd Halbleitervorrichtung mit reflektierender Schicht
JP3134382B2 (ja) * 1991-07-31 2001-02-13 大同特殊鋼株式会社 チャープ状光反射層を備えた半導体装置
JPH0527177A (ja) * 1991-07-25 1993-02-05 Fuji Photo Film Co Ltd 走査型顕微鏡
GB2353400B (en) 1999-08-20 2004-01-14 Cambridge Display Tech Ltd Mutiple-wavelength light emitting device and electronic apparatus
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
JP2004056010A (ja) * 2002-07-23 2004-02-19 Toyota Central Res & Dev Lab Inc 窒化物半導体発光素子
JP4350996B2 (ja) * 2002-11-26 2009-10-28 日東電工株式会社 有機エレクトロルミネッセンス素子、面光源および表示装置
TWI312582B (en) * 2003-07-24 2009-07-21 Epistar Corporatio Led device, flip-chip led package and light reflecting structure
JP4315760B2 (ja) * 2003-07-31 2009-08-19 株式会社沖データ 半導体発光装置、ｌｅｄヘッド、画像形成装置、及び半導体発光装置の製造方法
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
TWI292631B (en) * 2005-02-05 2008-01-11 Epistar Corp Light emitting diode and method of the same
US20070018182A1 (en) * 2005-07-20 2007-01-25 Goldeneye, Inc. Light emitting diodes with improved light extraction and reflectivity
EP2005488B1 (en) * 2005-12-16 2013-07-31 Samsung Display Co., Ltd. Optical device and method of fabricating the same
KR100862505B1 (ko) * 2006-02-01 2008-10-08 삼성전기주식회사 발광 다이오드 소자 및 그 제조방법
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
TWI370560B (en) * 2007-12-14 2012-08-11 Delta Electronics Inc Light-emitting diode device and manufacturing method thereof
US8143636B2 (en) * 2008-11-18 2012-03-27 Epistar Corporation Light-emitting device

Also Published As

Publication number Publication date
KR20090080218A (ko) 2009-07-24
US8174040B2 (en) 2012-05-08
EP2237332A2 (en) 2010-10-06
JP2011510512A (ja) 2011-03-31
US20100314645A1 (en) 2010-12-16
WO2009093845A2 (ko) 2009-07-30
WO2009093845A3 (ko) 2009-10-22
US20120199864A1 (en) 2012-08-09
JP5888854B2 (ja) 2016-03-22
EP2237332A4 (en) 2011-11-30
EP2237332B1 (en) 2019-08-21
CN101926011A (zh) 2010-12-22
KR101459764B1 (ko) 2014-11-12

Similar Documents

Publication Publication Date Title
CN101926011B (zh) 发光器件
KR100900288B1 (ko) 발광 소자
JP5179087B2 (ja) 発光素子
RU2491682C2 (ru) Полупроводниковое светоизлучающее устройство со структурами вывода света
CN101257077B (zh) 具有光子晶体高反射层的半导体发光二极管器件
RU2552867C2 (ru) Светодиод высокой яркости с шероховатым активным слоем и соответствующим по форме покрытием
CN104576857B (zh) 一种高反射层倒装led芯片结构及其制作方法
KR101317632B1 (ko) 질화물계 발광 소자 및 그 제조방법
CN113922210B (zh) 激光二极管及其封装结构
CN104160518A (zh) 用于具有较高光提取率的led的结构化基底
KR100921462B1 (ko) 수직형 발광 소자
KR20080093557A (ko) 질화물계 발광 소자
KR20140116574A (ko) 발광소자 및 이의 제조방법
Zhong et al. Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure
KR20070101421A (ko) 발광 다이오드
KR20050075968A (ko) Ｌｅｄ 소자의 구조 및 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210809

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China