CN101924168B - High-power light emitting diode (LED) - Google Patents
High-power light emitting diode (LED) Download PDFInfo
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- CN101924168B CN101924168B CN200910149061A CN200910149061A CN101924168B CN 101924168 B CN101924168 B CN 101924168B CN 200910149061 A CN200910149061 A CN 200910149061A CN 200910149061 A CN200910149061 A CN 200910149061A CN 101924168 B CN101924168 B CN 101924168B
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- conducting bracket
- connecting portion
- high power
- heat conduction
- power led
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Abstract
The invention relates to a high-power light emitting diode (LED). The high-power LED comprises a heat conducting bracket, a first conductive bracket, a second conductive bracket and an encapsulation colloid, wherein the heat conducting bracket is provided with a heat dissipation part and a fixed base; a bearing part is arranged at the top end of the heat dissipation part and provided with LED crystalline grains; the first and second conductive brackets are arranged on the two sides of the heat conducting bracket respectively; the first conductive bracket is provided with a first connection part and a first fixing part; the second conductive bracket is provided with a second connection part and a second fixing part; the first and second conductive brackets have opposite electrical properties; the first and second connection parts are electrically connected with the LED crystalline grains respectively; and the encapsulation colloid coats the heat dissipation part, the LED crystalline grains and the first and second connection parts and exposes the fixed base and the first and second fixing parts which are attached to a plane, so that the LED can be arranged on the plane. As the heat conducting bracket of the LED has a relatively large heat dissipation area and the fixed base of the LED can be connected to a heat dissipation base, the heat dissipation efficiency can be greatly increased by fixedly connecting the crystalline grains to the heat conducting bracket.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, particularly relate to a kind of structure of High Power LED.
Background technology
(Light Emitting Diode LED) is belong to compound semiconductor a kind of to light-emitting diode, and it is when utilizing electron hole in P type and the N type semiconductor material to combine, to give off energy with luminous form.Because light-emitting diode has advantages such as volume is little, the life-span is long, power consumption is low, reaction rate is fast, has been widely used in recent years on optical display, communication device and the lighting apparatus, becomes photoelectric cell indispensable in the daily life.
Lifting along with crystal technique of heap of stone; And cooperation different demands; Developed on the market at present and High Power LED illumination (High Power LEDs); So-called High Power LED illumination (HighPower LEDs) is meant that consumed power surpasses 1 watt led lighting, compares with traditional light-emitting diode, and the input energy conversion rate of High Power LED is higher.
And the method for packing of traditional High Power LED, after needing to accomplish lead frame and luminescent grain routing earlier, the step of carrying out a glue and adding lens again.In addition, the lead frame of crystal grain below is the method with perforated (through hole), inserts in the hole of printed circuit board (PCB), and the mode with welding is fixed on the circuit board at last.This kind packaged type is except step is complicated; And because the printed circuit board (PCB) capacity of heat transmission commonly used at present is not good; The contact area of conductive metal frames and light-emitting diode is less, makes radiating effect limited, the heat energy that causes High Power LED to be accumulated in long-time running back; Can't shed via metallic support or circuit board, and then reduce the luminous efficacy of High Power LED.
This shows that above-mentioned existing High Power LED obviously still has inconvenience and defective, and demands urgently further improving in structure and use.In order to solve the problem of above-mentioned existence; Relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly; But do not see always that for a long time suitable design is developed completion, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of High Power LED of new structure; Improve the structural design of High Power LED; Improve the radiating efficiency when using, and then make wafer can keep low-temperature condition, reduce the complicated of processing step simultaneously; Real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Summary of the invention
The objective of the invention is to; Overcome the defective that existing High Power LED exists, and a kind of High Power LED of new structure is provided, technical problem to be solved is to make it in order to improve radiating efficiency; And reduce the complicated of technology, be very suitable for practicality.
The object of the invention and solve its technical problem and adopt following technical scheme to realize.A kind of High Power LED according to the present invention's proposition; Be arranged on the plane; This light-emitting diode comprises: a heat conduction support; Have a radiating part and reach by the outward extending fixed pedestal in this radiating part lower end, the top of this radiating part is provided with a supporting part, in order to a LED crystal particle to be set; One first conducting bracket and one second conducting bracket; Be separately positioned on this heat conduction support both sides; Wherein this first conducting bracket has one first connecting portion and by this outward extending first fixed part in first connecting portion lower end; This second conducting bracket has one second connecting portion and by this outward extending second fixed part in second connecting portion lower end, and electrically opposite and this first connecting portion and this second connecting portion of this first conducting bracket and this second conducting bracket electrically connect with this LED crystal particle respectively; An and packing colloid; Coat this radiating part, this LED crystal particle, this first connecting portion and this second connecting portion; And expose this fixed pedestal, this first fixed part and this second fixed part; Wherein this fixed pedestal, this first fixed part and this second fixed part are attached on this plane, make this High Power LED can be arranged on this plane.
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize.
Aforesaid a kind of High Power LED, the material of wherein said heat conduction support are copper alloy.
Aforesaid a kind of High Power LED, the thickness of wherein said heat conduction support are more than the 0.5mm.
Aforesaid a kind of High Power LED, the thickness of wherein said first conducting bracket and this second conducting bracket is more than the 0.5mm.
Aforesaid a kind of High Power LED, the material of wherein said packing colloid are to be selected from following group: epoxy resin, methyl rubber, methyl resin, phenyl ring rubber, phenyl ring resin, organic sex change silica gel and combination thereof.
The object of the invention and solve its technical problem and also adopt following technical scheme to realize.According to a kind of High Power LED device that the present invention proposes, it comprises: a cooling base; One heat conduction support has a radiating part and by this outward extending fixed pedestal in radiating part lower end, and the top of this radiating part is provided with a supporting part, in order to a LED crystal particle to be set; One first conducting bracket and one second conducting bracket; Be separately positioned on this heat conduction support both sides; Wherein this first conducting bracket has one first connecting portion and by this outward extending first fixed part in first connecting portion lower end; This second conducting bracket has one second connecting portion and by this outward extending second fixed part in second connecting portion lower end, and electrically opposite and this first connecting portion and this second connecting portion of this first conducting bracket and this second conducting bracket electrically connect with this LED crystal particle respectively; An and packing colloid; Coat this radiating part, this LED crystal particle, this first connecting portion and this second connecting portion; And expose this fixed pedestal, this first fixed part and this second fixed part, wherein this fixed pedestal, this first fixed part and this second fixed part attach respectively and are connected on this cooling base.
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize.
Aforesaid a kind of High Power LED device, the material of wherein said heat conduction support is a copper alloy.
Aforesaid a kind of High Power LED device, the thickness of wherein said heat conduction support is more than the 0.5mm.
Aforesaid a kind of High Power LED device, the thickness of wherein said first conducting bracket and this second conducting bracket is more than the 0.5mm.
Aforesaid a kind of High Power LED device, the material of wherein said packing colloid is to be selected from following group: epoxy resin, methyl rubber, methyl resin, phenyl ring rubber, phenyl ring resin, organic sex change silica gel and combination thereof.
The present invention compared with prior art has tangible advantage and beneficial effect.Known that by above for achieving the above object, the invention provides a kind of High Power LED, it is arranged on the plane, this light-emitting diode comprises a heat conduction support, one first conducting bracket, one second conducting bracket and a packing colloid.Wherein this heat conduction support has a radiating part and by this outward extending fixed pedestal in radiating part lower end, and the top of this radiating part is provided with a supporting part, in order to a LED crystal particle to be set.This first conducting bracket and this second conducting bracket are separately positioned on this heat conduction support both sides; Wherein this first conducting bracket has one first connecting portion and by this outward extending first fixed part in first connecting portion lower end; This second conducting bracket has one second connecting portion and by this outward extending second fixed part in second connecting portion lower end, and electrically opposite and this first connecting portion and this second connecting portion of this first conducting bracket and this second conducting bracket electrically connect with this LED crystal particle respectively.This packing colloid then coats this radiating part, this LED crystal particle, this first connecting portion and this second connecting portion; And expose this fixed pedestal, this first fixed part and this second fixed part; Wherein this fixed pedestal, this first fixed part and this second fixed part are attached on this plane, make this High Power LED can be arranged on this plane.
According to one embodiment of the invention, the material of heat conduction support is a copper alloy, and its thickness is more than the 0.5mm.Because first fixed part and second fixed part and fixed pedestal are to be exposed to outside the packing colloid, so can be by a surface adhering technology and a cooling base surface engagement.
According to another embodiment of the present invention, the material of packing colloid is to be selected from following group: epoxy resin, methyl rubber, methyl resin, phenyl ring rubber, phenyl ring resin, organic sex change silica gel and combination thereof.
By technique scheme; A kind of High Power LED of the present invention has advantage and beneficial effect at least: High Power LED of the present invention is that crystal grain is fixed on the heat conduction support; Big area of dissipation by the heat conduction support; Utilize two conducting brackets and cooling base to electrically connect again, improve radiating effect with this kind electric heating separated structures.In addition; The packing colloid that this High Power LED adopted; Belong to the bullet cut packaged type, can directly encapsulate the inner member of High Power LED, and packing colloid can use as optical lens simultaneously; So can exempt the step that adds lens, reduce the complicated of technology and reduce cost.
In sum, the invention relates to a kind of High Power LED, comprise luminescent grain, heat conduction support, first conducting bracket, second conducting bracket and packing colloid.Wherein the heat conduction support has supporting part, radiating part and fixed pedestal from top to bottom in regular turn, and wherein supporting part is to be used to hold luminescent grain.Because its heat conduction support of this High Power LED has bigger area of dissipation, and its fixed pedestal more can be connected on the cooling base, therefore by crystal grain being fixed on the heat conduction support, can let heat dissipation greatly promote.The present invention has obvious improvement technically, and has tangible good effect, really is the new design of a novelty, progress, practicality.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification, and for let of the present invention above-mentioned with other purposes, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Fig. 1 is the stereogram of High Power LED encapsulation in the present invention's one preferred embodiment.
Fig. 2 be in another preferred embodiment of the present invention one have a High Power LED of cooling base stereogram.
100: High Power LED 109a: second linking part
102: luminescent grain 109b: second fixed part
104: heat conduction support 110: packing colloid
Conducting bracket 112 in 106: the first: supporting part
107a: first linking part 114: radiating part
107b: first fixed part 116: fixed pedestal
Conducting bracket 200 in 108: the second: cooling base
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment; To its embodiment of a kind of High Power LED, structure, characteristic and the effect thereof that proposes according to the present invention, specify as after.
Relevant aforementioned and other technology contents, characteristics and effect of the present invention can be known to appear in the detailed description of graphic preferred embodiment is consulted in following cooperation.Through the explanation of embodiment, when can being to reach technological means that predetermined purpose takes and effect to obtain one more deeply and concrete understanding to the present invention, yet the appended graphic usefulness that only provides reference and explanation be not to be used for the present invention is limited.
Seeing also shown in Figure 1ly, is the stereogram of High Power LED encapsulation in the present invention's one preferred embodiment.In this embodiment, High Power LED 100 is to encapsulate with the bullet cut packaged type.In Fig. 1, High Power LED 100 is arranged on the plane, mainly comprises luminescent grain 102, heat conduction support 104, first conducting bracket 106, second conducting bracket 108 and packing colloid 110.Wherein heat conduction support 104 comprises supporting part 112, radiating part 114 reaches by the outward extending fixed pedestal 116 in radiating part 114 lower ends.The heat conduction timbering material is a copper alloy, and its thickness is more than the 0.5mm.Supporting part 112 is arranged on the recess of the upper surface of heat conduction support 104, and luminescent grain 102 then utilizes the metal-to-metal adhesive material or with the mode of eutectic, is fixedly arranged in the supporting part 112.In view of the above, see also shown in Figure 2, be in another preferred embodiment of the present invention one have a High Power LED of cooling base stereogram.Can enlarge the heat-delivery surface of luminescent grain 102 by heat conduction support 104.And the fixed pedestal 116 of heat conduction support 104 can by surface adhering technology (Surface Mount Technology, SMT), and then with cooling base 200 surface engagement; This cooling base can be printed circuit board (PCB), metallic core printed circuit board (PCB) (Metal Core Printed Circuit Board; MCPCB) or radiating block etc., need to prove that cooling base 200 sizes of Fig. 2 are merely example; In other embodiments, size is not as limit.
The first above-mentioned conducting bracket 106 is arranged at a side of heat conduction support 104, its mainly comprise the first linking part 107a with by the outward extending first fixed part 107b two parts in the first linking part 107a lower end.Wherein the first linking part 107a is vertical with the first fixed part 107b, and the first linking part 107a and luminescent grain 102 electric connections.And second conducting bracket 108 is to be arranged at the opposite side of heat conduction support 104 with respect to first conducting bracket 106, and second conducting bracket 108 is opposite with first conducting bracket, 106 polarity.Likewise; Second conducting bracket 108 also comprise the second linking part 109a with by the outward extending second fixed part 109b two parts in the second linking part 109a lower end; And the second linking part 109a is vertical each other with the second fixed part 109b, and engages with luminescent grain 102 and cooling base 200 surface electrical behavior respectively.And the thickness of above-mentioned first conducting bracket 106 and this second conducting bracket 108 is more than the 0.5mm.
110 supporting part 112, radiating part 114, the first linking part 107a of first conducting bracket 106 and second linking part 109a of second conducting bracket 108 that coat heat conduction support 104 of above-mentioned packing colloid; So that the second fixed part 109b of fixed pedestal 116, the first fixed part 107b and second conducting bracket 108 is exposed to outside the packing colloid 110, and then make the first fixed part 107b, the second fixed part 109b and fixed pedestal 116 threes utilize mode and cooling base 200 surface engagement of SMT.And the material of packing colloid 110 is to be selected from following group: epoxy resin, methyl rubber, methyl resin, phenyl ring rubber, phenyl ring resin, organic sex change silica gel and combination thereof.
Because its heat conduction support of above-mentioned High Power LED has the area of dissipation of increasing, thus can be by crystal grain be fixed on the heat conduction support, and then the raising heat dissipation, make area of dissipation no longer be limited to the contact-making surface of conducting bracket and cooling base.
In addition, be compared to the method for packing of traditional perforated, this High Power LED more can engage fixed part by the mode of SMT with cooling base, technology is more simplified, and except can effectively reducing cost, also can strengthen cooling mechanism.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the technology contents of above-mentioned announcement capable of using is made a little change or is modified to the equivalent embodiment of equivalent variations; In every case be the content that does not break away from technical scheme of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention.
Claims (10)
1. a High Power LED is characterized in that it is arranged on the plane, and this light-emitting diode comprises:
One heat conduction support, L-shaped, comprise:
One radiating part is positioned at an end of this heat conduction support;
One supporting part is arranged on the top of this radiating part; And
One fixed pedestal, the other end that is positioned at relative this radiating part of this heat conduction support stretches out;
One LED crystal particle is arranged on this supporting part;
One first conducting bracket and one second conducting bracket; Be separately positioned on this heat conduction support both sides; Wherein this first conducting bracket has one first connecting portion and by this outward extending first fixed part in first connecting portion lower end; This second conducting bracket has one second connecting portion and by this outward extending second fixed part in second connecting portion lower end, and electrically opposite and this first connecting portion and this second connecting portion of this first conducting bracket and this second conducting bracket electrically connect with this LED crystal particle respectively; And
One packing colloid; Coat this radiating part, this LED crystal particle, this first connecting portion and this second connecting portion; And expose this fixed pedestal, this first fixed part and this second fixed part; Wherein this fixed pedestal, this first fixed part and this second fixed part are attached on this plane, make this High Power LED can be arranged on this plane.
2. a kind of High Power LED according to claim 1, the material that it is characterized in that wherein said heat conduction support is a copper alloy.
3. a kind of High Power LED according to claim 1, the thickness that it is characterized in that wherein said heat conduction support is more than the 0.5mm.
4. a kind of High Power LED according to claim 1, the thickness that it is characterized in that wherein said first conducting bracket and this second conducting bracket is more than the 0.5mm.
5. a kind of High Power LED according to claim 1, the material that it is characterized in that wherein said packing colloid are to be selected from following group: epoxy resin, methyl rubber, methyl resin, phenyl ring rubber, phenyl ring resin, organic sex change silica gel and combination thereof.
6. High Power LED device is characterized in that it comprises:
One cooling base;
One heat conduction support, L-shaped, comprise:
One radiating part is positioned at an end of this heat conduction support;
One supporting part is arranged on the top of this radiating part, in order to a LED crystal particle to be set; And
One fixed pedestal is positioned at this heat conduction support other end of this radiating part relatively, and stretches out;
One first conducting bracket and one second conducting bracket; Be separately positioned on this heat conduction support both sides; Wherein this first conducting bracket has one first connecting portion and by this outward extending first fixed part in first connecting portion lower end; This second conducting bracket has one second connecting portion and by this outward extending second fixed part in second connecting portion lower end, and electrically opposite and this first connecting portion and this second connecting portion of this first conducting bracket and this second conducting bracket electrically connect with this LED crystal particle respectively; And
One packing colloid; Coat this radiating part, this LED crystal particle, this first connecting portion and this second connecting portion; And expose this fixed pedestal, this first fixed part and this second fixed part, wherein this fixed pedestal, this first fixed part and this second fixed part attach respectively and are connected on this cooling base.
7. a kind of High Power LED device according to claim 6, the material that it is characterized in that wherein said heat conduction support is a copper alloy.
8. a kind of High Power LED device according to claim 6, the thickness that it is characterized in that wherein said heat conduction support is more than the 0.5mm.
9. a kind of High Power LED device according to claim 6, the thickness that it is characterized in that wherein said first conducting bracket and this second conducting bracket is more than the 0.5mm.
10. a kind of High Power LED device according to claim 6, the material that it is characterized in that wherein said packing colloid is to be selected from following group: epoxy resin, methyl rubber, methyl resin, phenyl ring rubber, phenyl ring resin, organic sex change silica gel and combination thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910149061A CN101924168B (en) | 2009-06-15 | 2009-06-15 | High-power light emitting diode (LED) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910149061A CN101924168B (en) | 2009-06-15 | 2009-06-15 | High-power light emitting diode (LED) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101924168A CN101924168A (en) | 2010-12-22 |
| CN101924168B true CN101924168B (en) | 2012-09-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910149061A Expired - Fee Related CN101924168B (en) | 2009-06-15 | 2009-06-15 | High-power light emitting diode (LED) |
Country Status (1)
| Country | Link |
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| CN (1) | CN101924168B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103079359A (en) * | 2011-10-26 | 2013-05-01 | 台湾利他股份有限公司 | Rapid element adhering method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2715351Y (en) * | 2004-06-17 | 2005-08-03 | 光宝科技股份有限公司 | Power type LED packaging module and supporting frame thereof |
| CN201104323Y (en) * | 2007-10-12 | 2008-08-20 | 亿光电子工业股份有限公司 | LED apparatus |
| CN201226360Y (en) * | 2008-06-12 | 2009-04-22 | 牛志宇 | High-power LED encapsulation structure |
| CN101414655A (en) * | 2008-12-02 | 2009-04-22 | 东莞市邦臣光电有限公司 | High power light-emitting diode and encapsulation method |
-
2009
- 2009-06-15 CN CN200910149061A patent/CN101924168B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2715351Y (en) * | 2004-06-17 | 2005-08-03 | 光宝科技股份有限公司 | Power type LED packaging module and supporting frame thereof |
| CN201104323Y (en) * | 2007-10-12 | 2008-08-20 | 亿光电子工业股份有限公司 | LED apparatus |
| CN201226360Y (en) * | 2008-06-12 | 2009-04-22 | 牛志宇 | High-power LED encapsulation structure |
| CN101414655A (en) * | 2008-12-02 | 2009-04-22 | 东莞市邦臣光电有限公司 | High power light-emitting diode and encapsulation method |
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| Publication number | Publication date |
|---|---|
| CN101924168A (en) | 2010-12-22 |
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Address after: The road of Taiwan Province, New Taipei City Forest District No. 6-8 Applicant after: Everlight Electronics Co.,Ltd. Address before: 25, Lane 76, three section, Central Road, Tu County, Taiwan, Taipei, China Applicant before: Everlight Electronics Co.,Ltd. |
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Granted publication date: 20120905 Termination date: 20170615 |