CN101414655A - High power light-emitting diode and encapsulation method - Google Patents
High power light-emitting diode and encapsulation method Download PDFInfo
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- CN101414655A CN101414655A CNA2008102195884A CN200810219588A CN101414655A CN 101414655 A CN101414655 A CN 101414655A CN A2008102195884 A CNA2008102195884 A CN A2008102195884A CN 200810219588 A CN200810219588 A CN 200810219588A CN 101414655 A CN101414655 A CN 101414655A
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Abstract
The invention discloses a high power LED which comprises a heat conducting bracket, a silicone resin optical lens and at least one LED chip. A cavity is arranged on the top end of the heat conducting bracket, the LED chip is arranged on the bottom of the cavity, the silicone resin optical lens is formed on the heat conducting bracket to seal the cavity, the heat conducting bracket accommodates anodic lead wires and cathodic lead wires, the LED chip has anodic soldered joints and cathodic soldered joints corresponding to the anodic lead wires and the cathodic lead wires, a solder paste layer is coated between the LED chip and the cavity bottom, and the LED chip is soldered on the cavity bottom by the solder paste layer. In the high-power LED, the solder paste layer is provided between the LED chip and the heat conducting bracket, the heat of the LED chip is discharged in time, the junction temperature is lowered to 75-95 DEG C, the luminous efficiency can reach over 100 lumens per watt, and the luminous flux can reach over 100 lumens, which prolongs the service life of the LED. In addition, the invention further discloses a packaging method of the high-power LED.
Description
Technical field
The present invention relates to a kind of light-emitting diode, relate in particular to a kind of large-power light-emitting diodes and method for packing.
Background technology
The energy lacks the bottleneck that problem has become restriction world today's sustainable development, has therefore energy-conservationly become the important topic of the world today.At lighting field, people constantly seek the illuminations of energy-saving and environmental protection more, safety, long service life to replace traditional illuminations.Adopting light-emitting diode (LED) light fixture to replace traditional incandescent lamp as illuminations is the lighting field qualitative leap.But because the radiating effect of present stage light-emitting diode (LED) is poor, cause the junction temperature of chip mostly to be in 95 ℃～150 ℃ high temperature ranges, and on encapsulation technology, also there is different technological disparity, thereby causes the optical efficiency of light-emitting diode low, luminous flux is low and useful life short.
Therefore, the large-power light-emitting diodes of being badly in need of a kind of light efficiency height, luminous flux height, long service life and having the excellent heat conductivity ability.
Summary of the invention
The large-power light-emitting diodes that the object of the present invention is to provide a kind of light efficiency height, luminous flux height, long service life and have the excellent heat conductivity ability.
The method for packing that another object of the present invention is to provide a kind of light efficiency height, luminous flux height, long service life and have the large-power light-emitting diodes of excellent heat conductivity ability.
For achieving the above object, technical scheme of the present invention is: a kind of large-power light-emitting diodes is provided, described large-power light-emitting diodes comprises the heat conduction support, silica gel resin optical lens and at least one light-emitting diode chip for backlight unit, the top of described heat conduction support has cavity, described light-emitting diode chip for backlight unit is installed on described cavity bottom, described silica gel resin optical lens shaping seals on described heat conduction support and to described cavity, described heat conduction support just is equipped with, negative wire, described light-emitting diode chip for backlight unit just has, the negative pole pad, just described, the negative wire correspondence with described light-emitting diode chip for backlight unit just, the welding of negative pole pad, wherein, described light-emitting diode chip for backlight unit and cavity scribble tin paste layer between the bottom, described tin paste layer with described light-emitting diode chip for backlight unit welding on the cavity bottom.
Preferably, described large-power light-emitting diodes also comprises the phosphor powder layer that is formed by fluorescent material, and described phosphor powder layer is attached in the cavity of described heat conduction support, and described fluorescent material is irregular polygon, and the diameter of described fluorescent material is 13 μ m～18 μ m.Diameter is that the light-emitting phosphor of 13 μ m～18 μ m is effective, and the index of refraction height helps light-emitting diode and improves luminous efficiency.
Preferably, the thickness of described tin paste layer is 0.1mm～0.12mm.Thickness is that the tin paste layer of 0.1mm～0.12mm has higher conductive coefficient, the heat that is produced in the time of making light-emitting diode chip for backlight unit work is delivered on the heat conduction support that contacts with the external world timely by tin paste layer, thereby make heat be transmitted to the external world faster, make the junction temperature of light-emitting diode chip for backlight unit be in the lower temperature range all the time, improve the luminous efficiency and the luminous flux of light-emitting diode, and prolonged the useful life of light-emitting diode.
Preferably, described silica gel resin optical lens is an index of refraction greater than 1.5 silica gel resin material.The silica gel resin optical lens that index of refraction is made greater than 1.5 silica gel resin has high-termal conductivity and high refractive index, not only luminous flux is big thoroughly to make silica gel resin optical lens, and the capacity of heat transmission is strong, in the luminous flux that has strengthened large-power light-emitting diodes of the present invention, also play the effect of heat radiation well, the heat that can in time light-emitting diode chip for backlight unit work be produced conducts to the external world timely, thereby the junction temperature of light-emitting diode chip for backlight unit is controlled in the temperature range of falling, has prolonged the useful life of light-emitting diode.
Preferably, described heat conduction support comprises metab and plastic cement main body, and described metab is embedded in the described plastic cement main body, and described cavity is located at described metab top, and described positive and negative lead-in wire is placed in described plastic cement main body and is equipped with the positive and negative electrode lead-in wire.Described metab has the good capacity of heat transmission, can timely the heat of inside be derived, thus the light efficiency and the useful life of having improved large-power light-emitting diodes of the present invention.
The method for packing of large-power light-emitting diodes of the present invention comprises the steps: to provide a heat conduction support that cleans, and the top of described heat conduction support has cavity, and described heat conduction support is penetrated with the positive and negative electrode lead-in wire; Cavity bottom at described heat conduction support applies one deck tin cream; At least one light-emitting diode chip for backlight unit is provided, and described light-emitting diode chip for backlight unit has the positive and negative electrode pad; Melt described tin cream and described light-emitting diode chip for backlight unit welding is fixed on the described tin paste layer; With the positive and negative electrode pad welding corresponding and described light-emitting diode chip for backlight unit of described positive and negative electrode lead-in wire; In described cavity, use fluorescent powder jet printing layer of fluorescent powder layer; And, the silica gel resin optical lens that on described heat conduction support, cavity is sealed with the silica gel resin forming.
The present invention compared with prior art, because large-power light-emitting diodes of the present invention has increased the tin paste layer with high thermal conductivity coefficient between light-emitting diode chip for backlight unit and heat conduction support, the heat that is produced in the time of making light-emitting diode chip for backlight unit work is delivered on the heat conduction support of external world's contact timely by tin paste layer, thereby make heat be transmitted to the external world faster, make the junction temperature of light-emitting diode chip for backlight unit can be reduced to by 95 ℃～150 ℃ traditional high temperature range in 75 ℃～95 ℃ the low temperature range, the luminous efficiency and the luminous flux of light-emitting diode have been improved, make large-power light-emitting diodes luminous efficiency of the present invention can reach 100 lumens more than every watt, luminous flux can reach more than 100 lumens, and has prolonged the useful life of light-emitting diode.
Description of drawings
Fig. 1 is the structural representation of large-power light-emitting diodes of the present invention.
The method for packing flow chart of Fig. 2 large-power light-emitting diodes of the present invention.
Embodiment
As shown in Figure 1, large-power light-emitting diodes of the present invention comprises heat conduction support 12, silica gel resin optical lens and 6 light-emitting diode chip for backlight unit 4, described light-emitting diode chip for backlight unit 4 is at least one, the top of described heat conduction support 12 has cavity 10, described light-emitting diode chip for backlight unit 4 is installed on described cavity 10 bottoms, described silica gel resin optical lens 6 takes shape on the described heat conduction support 12 and to described cavity 10 and seals, described heat conduction support 12 is equipped with positive pole, negative wire 40,41, described light-emitting diode chip for backlight unit just has, negative pole pad (not indicating among the figure) welding, particularly, institute's positive wire 40 comprises anodal connector 40a of hard and flexible positive lead 40b thereof, the anodal connector 40a of hard one end electrically connects with extraneous, the other end penetrates and is placed in the described heat conduction support 12 and with described flexible positive lead 40b one end and welds, the anodal pad welding of the described flexible positive lead 40b other end and described light-emitting diode chip for backlight unit 4, thus the positive pole of realizing light-emitting diode chip for backlight unit electrically connects with extraneous; Institute's negative wire 41 comprises hard anode connector 41a and flexible negative lead 41b thereof, hard anode connector 41a one end electrically connects with extraneous, the other end penetrates in the also ccontaining described heat conduction support 12 and with described flexible negative lead 41b one end and welds, the negative pole pad welding of the described flexible negative lead 41b other end and described light-emitting diode chip for backlight unit 4, thus the negative pole of realizing light-emitting diode chip for backlight unit 4 electrically connects with extraneous; Scribble tin paste layer 3 between the light-emitting diode chip for backlight unit 4 of large-power light-emitting diodes of the present invention and cavity 10 bottoms, described tin paste layer 3 with described light-emitting diode chip for backlight unit 4 weldings on cavity 41 bottoms.Tin paste layer 3 has high thermal conductivity coefficient, the heat that is produced in the time of making 4 work of light-emitting diodes tube core is delivered on the heat conduction support 12 that contacts with the external world timely by tin paste layer 3, thereby make heat be transmitted to the external world faster, make the junction temperature of light-emitting diode chip for backlight unit 4 can be reduced to by 95 ℃～150 ℃ traditional high temperature range in 75 ℃～95 ℃ the low temperature range, the luminous efficiency and the luminous flux of light-emitting diode have been improved, make large-power light-emitting diodes luminous efficiency of the present invention can reach 100 lumens more than every watt, luminous flux can reach more than 100 lumens, and has prolonged the useful life of light-emitting diode.
The preferably, described large-power light-emitting diodes also comprises the phosphor powder layer 5 that is formed by fluorescent material, and described phosphor powder layer 5 is attached in the cavity 10 of described heat conduction support, and described fluorescent material is irregular polygon, and the diameter of described fluorescent material is 13 μ m～18 μ m.Diameter is that the light-emitting phosphor of 13 μ m～18 μ m is effective, and the index of refraction height helps light-emitting diode and improves luminous efficiency.
The preferably, the thickness of described tin paste layer 3 is 0.1mm～0.12mm.Thickness is that the tin paste layer 3 of 0.1mm～0.12mm has higher conductive coefficient, the heat that is produced in the time of making light-emitting diode chip for backlight unit 4 work is delivered on the heat conduction support 12 that contacts with the external world timely by tin paste layer 3, thereby make heat be transmitted to the external world faster, make the junction temperature of light-emitting diode chip for backlight unit 4 be in the lower temperature range all the time, improve the luminous efficiency and the luminous flux of light-emitting diode, and prolonged the useful life of light-emitting diode.
The preferably, described silica gel resin optical lens 6 is an index of refraction greater than 1.5 silica gel resin material.The silica gel resin optical lens 6 that index of refraction is made greater than 1.5 silica gel resin has high-termal conductivity and high refractive index, not only luminous flux is big thoroughly to make silica gel resin optical lens 6, and the capacity of heat transmission is strong, in the luminous flux that has strengthened large-power light-emitting diodes of the present invention, also play the effect of heat radiation well, the heat that can in time light-emitting diode chip for backlight unit 3 work be produced conducts to the external world timely, thereby the junction temperature of light-emitting diode chip for backlight unit 3 is controlled in the temperature range of falling, has prolonged the useful life of light-emitting diode.
The preferably, described heat conduction support comprises metab 1 and plastic cement main body 2, described metab 1 is embedded in the described plastic cement main body 2, described cavity 10 is located at described metab 1 top, the arc groove 20 that to have with described light-emitting diode chip for backlight unit 4 on the end face of described plastic cement main body 2 be the center, thereby described silica gel resin optical lens 6 edge of opening are embedded in the described arc groove 20 and cover on the described light-emitting diode chip for backlight unit 4, anodal connector 40a of described hard and hard anode connector 41a one end pass described plastic cement main body 2 and ccontaining and described arc groove interior 20, the other end electrically connects with extraneous, 1 of described metal bottom has the good capacity of heat transmission, thereby has improved the light efficiency and the useful life of large-power light-emitting diodes of the present invention; Described plastic cement main body 2 can guarantee anodal connector 40a and hard anode connector 41a and external insulation, prevents the electric leakage accident.
As shown in Figure 2, the method for packing of large-power light-emitting diodes of the present invention, it comprises the steps:
S20 provides the heat conduction support of a cleaning, and the top of described heat conduction support has cavity, and described heat conduction support is penetrated with the positive and negative electrode lead-in wire;
S21 applies one deck tin paste layer in the cavity bottom of described heat conduction support; Particularly, the thickness of described tin paste layer 3 is 0.1mm～0.12mm.
S22 provides at least one light-emitting diode chip for backlight unit, and described light-emitting diode chip for backlight unit has the positive and negative electrode pad;
S23 melts described tin cream and described light-emitting diode chip for backlight unit welding is fixed on the described tin paste layer;
S24 is with the positive and negative electrode pad welding corresponding and described light-emitting diode chip for backlight unit of described positive and negative electrode lead-in wire;
S25 uses fluorescent powder jet printing layer of fluorescent powder layer in described cavity; Particularly, described fluorescent material is irregular polygon, and the diameter of described fluorescent material is 13 μ m～18 μ m.
The silica gel resin optical lens that S26 seals cavity with the silica gel resin forming on described heat conduction support; Particularly, described silica gel resin optical lens is an index of refraction greater than 1.5 silica gel resin material.
Tin paste layer 3 thickness of the method for packing of large-power light-emitting diodes of the present invention are 0.1mm～0.12mm, make tin paste layer 3 have higher conductive coefficient, the heat that is produced in the time of making light-emitting diode chip for backlight unit 4 work is delivered on the heat conduction support 12 that contacts with the external world timely by tin paste layer 3, thereby make heat be transmitted to the external world faster, make the junction temperature of light-emitting diode chip for backlight unit 4 be in the lower temperature range all the time, improve the light efficiency and the luminous flux of light-emitting diode, and prolonged the useful life of light-emitting diode.The silica gel resin optical lens 6 that index of refraction is made greater than 1.5 silica gel resin has high-termal conductivity and high refractive index, not only luminous flux is big to make silica gel resin optical lens saturating 6, and the capacity of heat transmission is strong, in the luminous flux that has strengthened large-power light-emitting diodes of the present invention, also play the effect of heat radiation well, the heat that can in time light-emitting diode chip for backlight unit 4 work be produced distributes the place to the external world timely, thereby the junction temperature of light-emitting diode chip for backlight unit 4 is controlled in the temperature range of falling, has prolonged the useful life of light-emitting diode.
The preferably, described heat conduction support 12 comprises metab 1 and plastic cement main body 2, described metab 1 is embedded in described plastic cement master 2 bodies, described cavity 10 is located at described metab 1 top, the arc groove 20 that to have with described light-emitting diode chip for backlight unit 4 on the end face of described plastic cement main body 2 be the center, thereby described silica gel resin optical lens 6 edge of opening are embedded in the described arc groove 20 and cover on the described light-emitting diode chip for backlight unit 4, anodal connector 40a of described hard and hard anode connector 41a one end pass in described plastic cement main body 2 and the ccontaining and described arc groove 20, the other end electrically connects with extraneous, described metab 2 has the good capacity of heat transmission, thereby has improved the light efficiency and the useful life of large-power light-emitting diodes of the present invention; Described plastic cement main body 2 can guarantee anodal connector 40a and hard anode connector 41a and external insulation, prevents the electric leakage accident.
The principle of luminosity of the light-emitting diode chip for backlight unit 4 that large-power light-emitting diodes of the present invention and method for packing are related, number and required power configuration are well known to those of ordinary skill in the art, no longer are described in detail at this.
Above disclosedly only be the preferred embodiments of patent of the present invention, can not limit the interest field of patent of the present invention certainly, the therefore equivalent variations of being done according to patent application claim of the present invention, the scope that still belongs to patent of the present invention and contained with this.
Claims (10)
1, a kind of large-power light-emitting diodes, comprise the heat conduction support, silica gel resin optical lens and at least one light-emitting diode chip for backlight unit, the top of described heat conduction support has cavity, described light-emitting diode chip for backlight unit is installed on described cavity bottom, described silica gel resin optical lens shaping seals on described heat conduction support and to described cavity, described heat conduction support just is equipped with, negative wire, described light-emitting diode chip for backlight unit just has, the negative pole pad, just described, the negative wire correspondence with described light-emitting diode chip for backlight unit just, the welding of negative pole pad, it is characterized in that: described light-emitting diode chip for backlight unit and cavity scribble tin paste layer between the bottom, described tin paste layer with described light-emitting diode chip for backlight unit welding on the cavity bottom.
2, large-power light-emitting diodes as claimed in claim 1, it is characterized in that: also comprise the phosphor powder layer that forms by fluorescent material, described phosphor powder layer is attached in the cavity of described heat conduction support, and described fluorescent material is irregular polygon, and the diameter of described fluorescent material is 13 μ m～18 μ m.
3, large-power light-emitting diodes as claimed in claim 1 is characterized in that: described tin paste layer thickness is 0.1mm～0.12mm.
4, large-power light-emitting diodes as claimed in claim 1 is characterized in that: described silica gel resin optical lens is an index of refraction greater than 1.5 silica gel resin material.
5, large-power light-emitting diodes as claimed in claim 1, it is characterized in that: described heat conduction support comprises metab and plastic cement main body, described metab is embedded in the described plastic cement main body, described cavity is located at the top of described metab, and described positive and negative lead-in wire is placed in the described plastic cement main body.
6, a kind of method for packing of large-power light-emitting diodes is characterized in that, comprises the steps:
The heat conduction support of one cleaning is provided, and the top of described heat conduction support has cavity, and described heat conduction support is penetrated with the positive and negative electrode lead-in wire;
Cavity bottom at described heat conduction support applies one deck tin cream;
At least one light-emitting diode chip for backlight unit is provided, and described light-emitting diode chip for backlight unit has the positive and negative electrode pad;
Melt described tin cream and described light-emitting diode chip for backlight unit welding is fixed on the described tin paste layer;
With the positive and negative electrode pad welding corresponding and described light-emitting diode chip for backlight unit of described positive and negative electrode lead-in wire;
In described cavity, use fluorescent powder jet printing layer of fluorescent powder layer; And
The silica gel resin optical lens that on described heat conduction support, cavity is sealed with the silica gel resin forming.
If the method for packing of the described large-power light-emitting diodes of 7 claims 6 is characterized in that: described fluorescent material is irregular polygon, the diameter of described fluorescent material is 13 μ m～18 μ m.
8, the method for packing of large-power light-emitting diodes as claimed in claim 6 is characterized in that: described tin paste layer thickness is 0.1mm～0.12mm.
9, the method for packing of large-power light-emitting diodes as claimed in claim 6 is characterized in that: described silica gel resin optical lens is an index of refraction greater than 1.5 silica gel resin material.
10, the method for packing of large-power light-emitting diodes as claimed in claim 6, it is characterized in that: described heat conduction support comprises metab and plastic cement main body, described metab is embedded in the described plastic cement main body, described cavity is located at described metab top, and described positive and negative electrode lead-in wire is placed in the described plastic cement main body.
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| CN2008102195884A CN101414655B (en) | 2008-12-02 | 2008-12-02 | High power light-emitting diode and encapsulation method |
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Cited By (9)
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| CN102157665A (en) * | 2011-03-22 | 2011-08-17 | 湘能华磊光电股份有限公司 | Light-emitting diode (LED) chip packaging structure and packaging method thereof |
| CN102185087A (en) * | 2011-05-10 | 2011-09-14 | 深圳市光核光电科技有限公司 | High-power LED (Light Emitting Diode) encapsulating structure |
| CN101924168B (en) * | 2009-06-15 | 2012-09-05 | 亿光电子工业股份有限公司 | High-power light emitting diode (LED) |
| CN102804425A (en) * | 2009-06-26 | 2012-11-28 | 法国圣戈班玻璃厂 | Light-emitting diode with a built-in planar optical element having refractive index modulation |
| CN102810622A (en) * | 2011-05-31 | 2012-12-05 | 三星电子株式会社 | Light emitting diode lens, light emitting diode module and method for manufacturing the light emitting diode module |
| CN103247748A (en) * | 2012-02-14 | 2013-08-14 | 贵州雅光电子科技股份有限公司 | Diode and manufacturing method thereof |
| CN103247747A (en) * | 2013-05-06 | 2013-08-14 | 东莞市星晖光电有限公司 | LED (light emitting diode) and manufacturing method thereof |
| CN103267269A (en) * | 2013-06-17 | 2013-08-28 | 徐淑暖 | Preparation method of moisture-proof LED (Light-Emitting Diode) lamp and moisture-proof LED lamp |
| CN109585632A (en) * | 2019-02-14 | 2019-04-05 | 旭宇光电（深圳）股份有限公司 | High-power long-distance fluorescent powder type white light LEDs cooling encapsulation |
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| CN2717026Y (en) * | 2004-06-11 | 2005-08-10 | 佛山市国星光电科技有限公司 | Multi-chip packaging structure LED |
| CN2826703Y (en) * | 2005-05-30 | 2006-10-11 | 亿光电子工业股份有限公司 | Packaging structure of light-emitting diode |
| CN201081170Y (en) * | 2007-10-12 | 2008-07-02 | 胡家培 | Bake-free encapsulated high-efficiency high-heat dissipation performance high-power LED light source |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101924168B (en) * | 2009-06-15 | 2012-09-05 | 亿光电子工业股份有限公司 | High-power light emitting diode (LED) |
| CN102804425A (en) * | 2009-06-26 | 2012-11-28 | 法国圣戈班玻璃厂 | Light-emitting diode with a built-in planar optical element having refractive index modulation |
| CN102157665A (en) * | 2011-03-22 | 2011-08-17 | 湘能华磊光电股份有限公司 | Light-emitting diode (LED) chip packaging structure and packaging method thereof |
| CN102185087A (en) * | 2011-05-10 | 2011-09-14 | 深圳市光核光电科技有限公司 | High-power LED (Light Emitting Diode) encapsulating structure |
| CN102185087B (en) * | 2011-05-10 | 2013-08-21 | 深圳市光核光电科技有限公司 | High-power LED (Light Emitting Diode) encapsulating structure |
| CN102810622A (en) * | 2011-05-31 | 2012-12-05 | 三星电子株式会社 | Light emitting diode lens, light emitting diode module and method for manufacturing the light emitting diode module |
| CN103247748A (en) * | 2012-02-14 | 2013-08-14 | 贵州雅光电子科技股份有限公司 | Diode and manufacturing method thereof |
| CN103247747A (en) * | 2013-05-06 | 2013-08-14 | 东莞市星晖光电有限公司 | LED (light emitting diode) and manufacturing method thereof |
| CN103267269A (en) * | 2013-06-17 | 2013-08-28 | 徐淑暖 | Preparation method of moisture-proof LED (Light-Emitting Diode) lamp and moisture-proof LED lamp |
| CN109585632A (en) * | 2019-02-14 | 2019-04-05 | 旭宇光电（深圳）股份有限公司 | High-power long-distance fluorescent powder type white light LEDs cooling encapsulation |
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