CN101922042A - 一种外延片托盘及与其配合的支撑和旋转联接装置 - Google Patents
一种外延片托盘及与其配合的支撑和旋转联接装置 Download PDFInfo
- Publication number
- CN101922042A CN101922042A CN201010263418.3A CN201010263418A CN101922042A CN 101922042 A CN101922042 A CN 101922042A CN 201010263418 A CN201010263418 A CN 201010263418A CN 101922042 A CN101922042 A CN 101922042A
- Authority
- CN
- China
- Prior art keywords
- pallet
- drive shaft
- tray
- counterbore
- rotating shaft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (9)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010263418.3A CN101922042B (zh) | 2010-08-19 | 2010-08-19 | 一种外延片托盘支撑旋转联接装置 |
DE112011101454T DE112011101454T5 (de) | 2010-08-19 | 2011-07-12 | Epitaxialwafer-Suszeptor und dem Suszeptor angepasste Halte- und Dreh-Verbindungsvorrichtung |
PCT/CN2011/001147 WO2012022111A1 (zh) | 2010-08-19 | 2011-07-12 | 一种外延片托盘及与其配合的支撑和旋转联接装置 |
US13/670,933 US20130061805A1 (en) | 2010-08-19 | 2012-11-07 | Epitaxial wafer susceptor and supportive and rotational connection apparatus matching the susceptor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010263418.3A CN101922042B (zh) | 2010-08-19 | 2010-08-19 | 一种外延片托盘支撑旋转联接装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101922042A true CN101922042A (zh) | 2010-12-22 |
CN101922042B CN101922042B (zh) | 2012-05-30 |
Family
ID=43337242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010263418.3A Active CN101922042B (zh) | 2010-08-19 | 2010-08-19 | 一种外延片托盘支撑旋转联接装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20130061805A1 (zh) |
CN (1) | CN101922042B (zh) |
DE (1) | DE112011101454T5 (zh) |
WO (1) | WO2012022111A1 (zh) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102154690A (zh) * | 2011-05-23 | 2011-08-17 | 东莞市天域半导体科技有限公司 | 行星式外延生长设备中托盘的构成方法和装置 |
WO2012022111A1 (zh) * | 2010-08-19 | 2012-02-23 | 江苏中晟半导体设备有限公司 | 一种外延片托盘及与其配合的支撑和旋转联接装置 |
CN102758192A (zh) * | 2012-06-05 | 2012-10-31 | 中国电子科技集团公司第四十八研究所 | 一种半导体外延片载片盘及其支撑装置及mocvd反应室 |
CN103205731A (zh) * | 2012-03-21 | 2013-07-17 | 江苏汉莱科技有限公司 | 一种mocvd新反应系统 |
CN103215563A (zh) * | 2013-04-28 | 2013-07-24 | 光垒光电科技(上海)有限公司 | 沉积设备以及旋转装置 |
CN103436862A (zh) * | 2013-08-06 | 2013-12-11 | 中国电子科技集团公司第四十八研究所 | 一种用于mocvd反应器的支撑轴及mocvd反应器 |
CN103540912A (zh) * | 2012-07-09 | 2014-01-29 | 中晟光电设备(上海)有限公司 | Mocvd设备及该设备中的托盘支撑旋转系统 |
CN104321859A (zh) * | 2012-03-20 | 2015-01-28 | 维易科仪器公司 | 键控晶片载体 |
CN105350073A (zh) * | 2015-10-30 | 2016-02-24 | 中国电子科技集团公司第四十八研究所 | 一种硅外延设备的石墨盘旋转密封装置及自动上下料系统 |
CN105575860A (zh) * | 2014-10-09 | 2016-05-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘的旋转连接组件以及应用其的反应腔室 |
CN106801222A (zh) * | 2015-11-26 | 2017-06-06 | 中晟光电设备(上海)股份有限公司 | 一种晶片托盘及mocvd系统 |
CN107195579A (zh) * | 2016-03-14 | 2017-09-22 | 环球晶圆股份有限公司 | 晶圆承载装置 |
CN108779576A (zh) * | 2016-02-08 | 2018-11-09 | 洛佩诗公司 | 可感应加热的基座和外延沉积反应器 |
CN111554610A (zh) * | 2020-04-16 | 2020-08-18 | 清华大学 | 微腔刻蚀基底盛放装置及微腔刻蚀系统 |
CN111733389A (zh) * | 2015-06-16 | 2020-10-02 | 施耐德两合公司 | 用于镜片覆层的装置 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011500961A (ja) | 2007-10-11 | 2011-01-06 | バレンス プロセス イクウィップメント,インコーポレイテッド | 化学気相成長反応器 |
CN103132051B (zh) * | 2011-11-23 | 2015-07-08 | 中微半导体设备(上海)有限公司 | 化学气相沉积反应器或外延层生长反应器及其支撑装置 |
US9316443B2 (en) * | 2012-08-23 | 2016-04-19 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
US9093482B2 (en) * | 2012-10-12 | 2015-07-28 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
US9748120B2 (en) | 2013-07-01 | 2017-08-29 | Lam Research Ag | Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus |
US9245777B2 (en) * | 2013-05-15 | 2016-01-26 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles and heating system for use in such apparatus |
DE102016125278A1 (de) | 2016-12-14 | 2018-06-14 | Schneider Gmbh & Co. Kg | Vorrichtung, Verfahren und Verwendung zur Beschichtung von Linsen |
WO2023220681A1 (en) * | 2022-05-12 | 2023-11-16 | Watlow Electric Manufacturing Company | Hybrid shaft assembly for thermal control in heated semiconductor pedestals |
CN115216843B (zh) * | 2022-07-14 | 2023-07-07 | 深圳市纳设智能装备有限公司 | 一种石墨托盘状态检测方法、装置、系统和终端设备 |
CN115161766B (zh) * | 2022-07-14 | 2024-04-26 | 中国电子科技集团公司第四十八研究所 | 硅外延设备的石墨基座旋转结构及石墨基座水平调节方法 |
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US4999211A (en) * | 1989-09-22 | 1991-03-12 | Itt Corporation | Apparatus and method for making a photocathode |
JPH10154740A (ja) * | 1996-11-22 | 1998-06-09 | Mecs:Kk | ウェハとトレーのセッティングシステムとそのためのトレーへのウェハセッティング装置 |
US6053977A (en) * | 1997-07-04 | 2000-04-25 | Tokyo Electron Limited | Coating apparatus |
US6727164B2 (en) * | 2001-02-02 | 2004-04-27 | Ngk Insulators, Ltd. | Method for fabricating a semiconducting nitride film, susceptor tray, and apparatus for fabricating a semiconducting nitride film |
CN1644754A (zh) * | 2004-10-19 | 2005-07-27 | 吉林大学 | 氧化锌生长用低压金属有机化学汽相沉积设备及其工艺 |
CN1782142A (zh) * | 2004-11-16 | 2006-06-07 | 住友电气工业株式会社 | 晶片导向器,mocvd装置和氮化物半导体生长方法 |
CN101224862A (zh) * | 2007-01-15 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种真空旋转升降装置 |
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US3008447A (en) * | 1958-11-15 | 1961-11-14 | Electronique & Automatisme Sa | Apparatus for the production of electrically conductive film layers of controlled resistivity |
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JPS62284079A (ja) * | 1986-05-31 | 1987-12-09 | Babcock Hitachi Kk | 光化学的気相堆積装置 |
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JPH05109655A (ja) * | 1991-10-15 | 1993-04-30 | Applied Materials Japan Kk | Cvd−スパツタ装置 |
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JP4331901B2 (ja) * | 2001-03-30 | 2009-09-16 | 日本碍子株式会社 | セラミックサセプターの支持構造 |
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US8021487B2 (en) * | 2007-12-12 | 2011-09-20 | Veeco Instruments Inc. | Wafer carrier with hub |
CN101922042B (zh) | 2010-08-19 | 2012-05-30 | 江苏中晟半导体设备有限公司 | 一种外延片托盘支撑旋转联接装置 |
CN101906622B (zh) * | 2010-08-20 | 2013-03-20 | 江苏中晟半导体设备有限公司 | 用于mocvd系统中控制外延片温度及均匀性的装置与方法 |
-
2010
- 2010-08-19 CN CN201010263418.3A patent/CN101922042B/zh active Active
-
2011
- 2011-07-12 WO PCT/CN2011/001147 patent/WO2012022111A1/zh active Application Filing
- 2011-07-12 DE DE112011101454T patent/DE112011101454T5/de not_active Ceased
-
2012
- 2012-11-07 US US13/670,933 patent/US20130061805A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US4999211A (en) * | 1989-09-22 | 1991-03-12 | Itt Corporation | Apparatus and method for making a photocathode |
JPH10154740A (ja) * | 1996-11-22 | 1998-06-09 | Mecs:Kk | ウェハとトレーのセッティングシステムとそのためのトレーへのウェハセッティング装置 |
US6053977A (en) * | 1997-07-04 | 2000-04-25 | Tokyo Electron Limited | Coating apparatus |
US6727164B2 (en) * | 2001-02-02 | 2004-04-27 | Ngk Insulators, Ltd. | Method for fabricating a semiconducting nitride film, susceptor tray, and apparatus for fabricating a semiconducting nitride film |
CN1644754A (zh) * | 2004-10-19 | 2005-07-27 | 吉林大学 | 氧化锌生长用低压金属有机化学汽相沉积设备及其工艺 |
CN1782142A (zh) * | 2004-11-16 | 2006-06-07 | 住友电气工业株式会社 | 晶片导向器,mocvd装置和氮化物半导体生长方法 |
CN101224862A (zh) * | 2007-01-15 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种真空旋转升降装置 |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012022111A1 (zh) * | 2010-08-19 | 2012-02-23 | 江苏中晟半导体设备有限公司 | 一种外延片托盘及与其配合的支撑和旋转联接装置 |
DE112011101454T5 (de) | 2010-08-19 | 2013-03-14 | JiangSu Zhongsheng Semiconductor Equipment Co. Ltd. | Epitaxialwafer-Suszeptor und dem Suszeptor angepasste Halte- und Dreh-Verbindungsvorrichtung |
CN102154690A (zh) * | 2011-05-23 | 2011-08-17 | 东莞市天域半导体科技有限公司 | 行星式外延生长设备中托盘的构成方法和装置 |
CN102154690B (zh) * | 2011-05-23 | 2012-05-30 | 东莞市天域半导体科技有限公司 | 行星式外延生长设备中托盘的构成方法和装置 |
CN104321859A (zh) * | 2012-03-20 | 2015-01-28 | 维易科仪器公司 | 键控晶片载体 |
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WO2012022111A1 (zh) | 2012-02-23 |
CN101922042B (zh) | 2012-05-30 |
US20130061805A1 (en) | 2013-03-14 |
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