CN101911289B - 具有限制部件的三维半导体管芯结构及其制造方法 - Google Patents

具有限制部件的三维半导体管芯结构及其制造方法 Download PDF

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Publication number
CN101911289B
CN101911289B CN2008801227000A CN200880122700A CN101911289B CN 101911289 B CN101911289 B CN 101911289B CN 2008801227000 A CN2008801227000 A CN 2008801227000A CN 200880122700 A CN200880122700 A CN 200880122700A CN 101911289 B CN101911289 B CN 101911289B
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die
contact
peg
opening
forming
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CN101911289A (zh
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S·K·波兹德
R·查特杰
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01257—Changing the shapes of bumps by reflowing
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01938—Manufacture or treatment of bond pads using blanket deposition in gaseous form, e.g. by CVD or PVD
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01951—Changing the shapes of bond pads
    • H10W72/01953—Changing the shapes of bond pads by etching
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07221—Aligning
    • H10W72/07227—Aligning involving guiding structures, e.g. spacers or supporting members
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07255—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in materials
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H10W72/2528—Intermetallic compounds
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/261—Functions other than electrical connecting
    • H10W72/263—Providing mechanical bonding or support, e.g. dummy bumps
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/261—Functions other than electrical connecting
    • H10W72/267—Multiple bump connectors having different functions
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/285—Alignment aids, e.g. alignment marks
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
CN2008801227000A 2007-12-28 2008-12-10 具有限制部件的三维半导体管芯结构及其制造方法 Expired - Fee Related CN101911289B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/966,077 US7811932B2 (en) 2007-12-28 2007-12-28 3-D semiconductor die structure with containing feature and method
US11/966,077 2007-12-28
PCT/US2008/086174 WO2009085609A2 (en) 2007-12-28 2008-12-10 3-d semiconductor die structure with containing feature and method

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Publication Number Publication Date
CN101911289A CN101911289A (zh) 2010-12-08
CN101911289B true CN101911289B (zh) 2012-10-03

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US (2) US7811932B2 (https=)
EP (1) EP2232549B1 (https=)
JP (1) JP5234696B2 (https=)
KR (1) KR101558194B1 (https=)
CN (1) CN101911289B (https=)
TW (1) TWI470746B (https=)
WO (1) WO2009085609A2 (https=)

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US8441123B1 (en) * 2009-08-13 2013-05-14 Amkor Technology, Inc. Semiconductor device with metal dam and fabricating method
EP2398046A1 (en) * 2010-06-18 2011-12-21 Nxp B.V. Integrated circuit package with a copper-tin joining layer and manufacturing method thereof
DE102010040065B4 (de) * 2010-08-31 2015-07-23 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verspannungsreduktion in einem Chipgehäuse unter Anwendung eines Chip-Gehäuse-Verbindungsschemas bei geringer Temperatur
US8907485B2 (en) 2012-08-24 2014-12-09 Freescale Semiconductor, Inc. Copper ball bond features and structure
US8907488B2 (en) 2012-12-28 2014-12-09 Broadcom Corporation Microbump and sacrificial pad pattern
JP6466594B2 (ja) 2014-12-17 2019-02-06 アルファ・アセンブリー・ソリューションズ・インコーポレイテッドＡｌｐｈａ Ａｓｓｅｍｂｌｙ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． ダイとクリップの接着方法
US9713264B2 (en) 2014-12-18 2017-07-18 Intel Corporation Zero-misalignment via-pad structures
US10076034B2 (en) * 2016-10-26 2018-09-11 Nanya Technology Corporation Electronic structure
US10475736B2 (en) 2017-09-28 2019-11-12 Intel Corporation Via architecture for increased density interface
US10217718B1 (en) * 2017-10-13 2019-02-26 Denselight Semiconductors Pte. Ltd. Method for wafer-level semiconductor die attachment
JP7251951B2 (ja) * 2018-11-13 2023-04-04 新光電気工業株式会社 半導体装置及び半導体装置の製造方法
US11862593B2 (en) * 2021-05-07 2024-01-02 Microsoft Technology Licensing, Llc Electroplated indium bump stacks for cryogenic electronics

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JPH06120225A (ja) 1992-09-30 1994-04-28 Nippon Telegr & Teleph Corp <Ntt> 光モジュールの製造方法
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US6365967B1 (en) * 1999-05-25 2002-04-02 Micron Technology, Inc. Interconnect structure
CN1976560A (zh) * 2005-11-29 2007-06-06 三星电机株式会社 使用焊膏凸块的基板和多层印刷电路板及其制造方法

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JPH06120225A (ja) 1992-09-30 1994-04-28 Nippon Telegr & Teleph Corp <Ntt> 光モジュールの製造方法
KR19980025889A (ko) * 1996-10-05 1998-07-15 김광호 중합체층이 개재된 반도체 칩과 기판 간의 범프 접속 구조
US6365967B1 (en) * 1999-05-25 2002-04-02 Micron Technology, Inc. Interconnect structure
CN1976560A (zh) * 2005-11-29 2007-06-06 三星电机株式会社 使用焊膏凸块的基板和多层印刷电路板及其制造方法

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EP2232549A2 (en) 2010-09-29
EP2232549A4 (en) 2011-04-06
KR101558194B1 (ko) 2015-10-07
TWI470746B (zh) 2015-01-21
US7811932B2 (en) 2010-10-12
CN101911289A (zh) 2010-12-08
US8581383B2 (en) 2013-11-12
TW200939413A (en) 2009-09-16
EP2232549B1 (en) 2018-09-19
WO2009085609A3 (en) 2009-09-03
WO2009085609A2 (en) 2009-07-09
US20100327440A1 (en) 2010-12-30
KR20100102132A (ko) 2010-09-20
JP5234696B2 (ja) 2013-07-10
US20090166888A1 (en) 2009-07-02
JP2011508451A (ja) 2011-03-10

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