CN101908471A - Method for preparing large-area polycrystalline film - Google Patents
Method for preparing large-area polycrystalline film Download PDFInfo
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- CN101908471A CN101908471A CN2010101415954A CN201010141595A CN101908471A CN 101908471 A CN101908471 A CN 101908471A CN 2010101415954 A CN2010101415954 A CN 2010101415954A CN 201010141595 A CN201010141595 A CN 201010141595A CN 101908471 A CN101908471 A CN 101908471A
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- polycrystalline film
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Abstract
The invention discloses a method for preparing a large-area polycrystalline film, which comprises the following steps of: (1) depositing a layer of amorphous silicon film on a glass substrate; (2) exposing a strip window on the amorphous silicon film by adopting a photo-etching process; (3) sputtering a layer of metal on the amorphous silicon film in the window by adopting a magnetron sputtering method; (4) irradiating the window by adopting a laser device to prepare the polycrystalline film; and (5) removing the residual nickel metal by using acid. The invention provides the new method for preparing the polycrystalline film by combining a conventional metal-induced solid phase crystallization method and a laser crystallization technique; the prepared polycrystalline film has the effects on preferred orientation of the metal-induced solid phase crystallization method and high mobility and few defects of the laser crystallization method; and meanwhile, the method can prepare the large-area polycrystalline film by combining the photo-etching technology and the metal-induced transverse crystallization property, and provides convenience for industrialization.
Description
Technical field
The present invention relates to a kind of novel metal and induce method for manufacturing polycrystalline silicon thin film, particularly relate to a kind of preparation method with polysilicon membrane of preferred orientation and high mobility.
Background technology
The light-decay characteristic of amorphous silicon thin-film solar cell and transformation efficiency are not high, make people forward more sight on the polysilicon membrane to, replace amorphous can solve the optical attenuation problem with polycrystalline, and because the minimizing of defective makes transformation efficiency to be further enhanced, at present, prepare low temperature crystallized amorphous silicon and mainly contain two kinds of methods: laser induced crystallization (ELA) and metal-induced crystallization (MIC/MILC).The polysilicon membrane of laser induced crystallization method preparation has the mobility height, characteristics such as spatial selectivity is good, but repeatability, stability, lack of homogeneity, be difficult to large tracts of landization, and metal inducement can solve the deficiency of induced with laser effectively, but metal inducement also has crystallization velocity not high enough, heat treatment time is long, crystallization rate descends the degradation characteristics with the heat treatment time increase, disclosed in this invention is exactly that a kind of bond and induced with laser technology are made high-quality polysilicon method, adopt the polysilicon membrane of technology manufacturing disclosed in this invention to have following several characteristic, but large-area preparation, has preferred orientation, high electron mobility, the time weak point is easy to industrialization, the silane radio frequency glow discharge plasma activated chemical vapour deposition that traditional low temperature is made the useful highly diluted of method of polysilicon prepares polysilicon membrane, but deposition rate is too low, be not suitable for large-scale production, and prepared polycrystal film defective is too many, and nonideal polysilicon membrane, it two is to adopt laser radiation, the prepared polysilicon membrane of laser radiation has low defect state density, but because the restriction of the bundle spot size of laser beam is difficult to prepare the large-area polycrystalline silicon thin film.
Close with patent disclosed in this invention is that the patent No. is [200610123789.5], and its described patent is the fundamental drawback of metal inducement not to be broken away from the improvement of metal inducement technology both crystallization velocity was not high enough, and heat treatment time is long.
Summary of the invention
Technical problem to be solved by this invention provides a kind of low temperature preparation method with polysilicon membrane of preferred orientation and high mobility.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of method for preparing large-area polycrystalline film comprises the steps:
(1) deposit one deck amorphous silicon (a-Si:H) film on glass substrate;
(2) adopt photoetching process, the strip window exposes on amorphous silicon membrane;
(3) adopt magnetron sputtering method sputter layer of metal on the amorphous silicon membrane in window;
(4) adopt laser to carry out irradiation and prepare polycrystal film facing to window;
(5) remove metal remained nickel with acid.
In the step (1), the method for deposit is the PECVD method, with SiH
4And H
2Be reacting gas, underlayer temperature is 220 ℃.The thickness of amorphous silicon (a-Si:H) film is fixed according to actual needs.
In the step (2), the spacing of the width of strip window, the degree of depth and per two strip windows is decided according to the actual requirements, is generally the millimeter level.
In the step (3), described magnetron sputtering method, the radio frequency sputtering power density is 4W/cm
2, underlayer temperature is 150 ℃, the Ar gas flow is 30mL/min.Described metal layer thickness is 5～10nm.Described metal is nickel, gold or aluminium, is preferably nickel, and reason is that the small lattice as the nisiloy compound N iSi2 of the media of crystallization and Si does not match (＜4%), makes the easier crystallization of amorphous silicon.
In the step (4), described laser, the laser medium that uses is ArF, KrF or XeCl; Be respectively 193nm, 248nm and 308nm with the corresponding optical maser wavelength of laser medium, pulsewidth is between 10～50ns.The preferred laser medium that uses is XeCl, and optical maser wavelength is 308nm, because the a-Si material has good absorption to the Ultra-Violet Laser of 308nm.The principle of quasi-molecule laser annealing crystallization is the surface that laser beam is radiated the a-Si film, makes the a-Si of film surface and laser contact absorb laser energy, and temperature sharply rises and reaches fusing point.Laser beam moves forward with certain repetition rate, and the a-Si of fusion cools off crystallization again, forms polycrystal film.Because this process duration is very short and laser beam width is very little, so although the a-Si temperature has reached fusing point, the heat that is delivered to substrate glass is also few, can not cause the thermal deformation of substrate glass, general base reservoir temperature is about 400 ℃.
In the step (5), described acid is watery hydrochloric acid.
Disclosed in this invention is a kind of preparation method with polysilicon membrane low temperature of preferred orientation and high mobility, it is different from conventional low temperature and prepares the polysilicon membrane part and be: at first adopting photoetching technique to prepare the strip window is that postorder plating strip metal is ready, the advantage of doing like this is that its metal can guide the polycrystalline silicon growth direction to make it have preferred orientation better, its preferred crystal orientation is (220), moreover the transverse crystallization characteristic of utilizing metal makes it can the large tracts of land crystallization, second different is to be to adopt the form crystallization of laser irradiation and the unconventional rice that moves back is handled after having plated metal, adopting the advantage of this mode to be that its prepared polysilicon is thin has fewer defect concentration and big electron mobility, has higher transformation efficiency and absorptivity with the prepared multi-crystal silicon film solar battery of this film.
Beneficial effect: the present invention is on the basis of conventional metal inducement solid phase crystallization method of combination and laser crystallization technology, a kind of new polysilicon membrane preparation method who is invented, the preferred orientation of the existing metal inducement solid phase crystallization method of its prepared polysilicon membrane, the prepared high mobility of laser crystallization method is arranged again, the effect that defective is few, simultaneously the transverse crystallization characteristic of leading thoroughly in conjunction with photoetching technique and metal can prepare the large-area polycrystalline silicon thin film, carries for industrialization and has encircleed convenience.It is the multi-crystal silicon film solar battery of substrate that the inventive method is particularly useful for the simple glass.
The present invention compares with existing polysilicon membrane preparation method, has following improvement:
1, adopts photoetching technique, leave the strip window, and the nickel particle of sputter micron dimension, as the metal of inducing of metal inducement solid phase crystallization, because the transverse crystallization characteristic of metal inducement there had not been the place of windowing can both can be prepared the large-area polycrystalline silicon thin film by crystallization originally yet.
2, adopt the form of laser irradiation but not existing annealing form, adopt the benefit of laser emission to be, because it reaches the melting recrystallization characteristic fast, it is few to make that its prepared polysilicon membrane has defective, the high characteristic of electron mobility, this will greatly reduce electron hole pair compound of solar cell, thereby improve the electricity conversion of solar cell.
3, owing to adopt laser but not annealing, the direct economy effect that it brings is to have shortened the processing procedure time, existing annealing needs about 1h, and employing laser emission can be above 5 minutes, secondly also can reduce the cost of equipment, the price of a general annealing furnace can be suitable with the price of 5 lasers.
Description of drawings
Fig. 1 is the laser crystallization schematic diagram that the inventive method adopted.
Embodiment
According to following embodiment, the present invention may be better understood.Yet, those skilled in the art will readily understand that embodiment only is used to illustrate the present invention, and should also can not limit the present invention described in detail in claims.
Embodiment 1:
The present invention will be further described below in conjunction with Fig. 1, and detailed process is as follows:
1, prepares a ultra-clear glasses 3, require to have light transmittance preferably.With PECVD method deposit a-Si:H film 2, thickness is for 150nm, with SiH
4And H
2Be reacting gas, gas flow is for 18mL/min, and underlayer temperature is 220 ℃, and reative cell pressure is 80Pa.
2, on the basis of step 1, adopt photoetching process, the spacing of 4, two the strip windows of strip window that expose to is decided according to the actual requirements, and spacing is in the millimeter level.
3, adopt magnetron sputtering method sputter layer of Ni metal level on amorphous silicon membrane on the basis of step 2, the position is on institute's windowing place amorphous silicon layer, and thickness is at 10nm, and the radio frequency sputtering power density is 4W/cm
2Adopt, underlayer temperature is 150 ℃, and reative cell air pressure was at 0.2Pa when the Ar gas flow was the 30mL/min sputter.
4, on the basis of step 3, adopt laser 1 to carry out irradiation, use the XeCl laser facing to the window of having held successfully, optical maser wavelength 308nm, pulsewidth is at 25ns, and power is 310W.
5, remove metal remained nickel and photoresist with watery hydrochloric acid.
Claims (9)
1. a method for preparing large-area polycrystalline film is characterized in that this method comprises the steps:
(1) deposit one deck amorphous silicon membrane on glass substrate;
(2) adopt photoetching process, the strip window exposes on amorphous silicon membrane;
(3) adopt magnetron sputtering method sputter layer of metal on the amorphous silicon membrane in window;
(4) adopt laser to carry out irradiation and prepare polycrystal film facing to window;
(5) remove metal remained nickel and photoresist with acid.
2. a kind of method for preparing large-area polycrystalline film according to claim 1 is characterized in that the method for deposit is the PECVD method, with SiH in the step (1)
4And H
2Be reacting gas, underlayer temperature is 220 ℃.
3. a kind of method for preparing large-area polycrystalline film according to claim 1 is characterized in that in the step (3), described magnetron sputtering method, and the radio frequency sputtering power density is 4W/cm
2, underlayer temperature is 150 ℃, the Ar gas flow is 30mL/min.
4. a kind of method for preparing large-area polycrystalline film according to claim 1 is characterized in that in the step (3), described metal layer thickness is 5～10nm.
5. according to claim 1 or 4 described a kind of methods that prepare large-area polycrystalline film, it is characterized in that in the step (3), described metal is nickel, gold or aluminium.
6. a kind of method for preparing large-area polycrystalline film according to claim 5 is characterized in that in the step (3), described metal is a nickel.
7. a kind of method for preparing large-area polycrystalline film according to claim 1 is characterized in that in the step (4), described laser, and the laser medium that uses is ArF, KrF or XeCl; Be respectively 193nm, 248nm and 308nm with the corresponding optical maser wavelength of laser medium, pulsewidth is between 10～50ns.
8. a kind of method for preparing large-area polycrystalline film according to claim 7 is characterized in that in the step (4), described laser, and the laser medium that uses is XeCl, optical maser wavelength is 308nm.
9. a kind of method for preparing large-area polycrystalline film according to claim 1 is characterized in that in the step (5), described acid is watery hydrochloric acid.
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| CN2010101415954A CN101908471A (en) | 2010-04-07 | 2010-04-07 | Method for preparing large-area polycrystalline film |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263014A (en) * | 2011-07-29 | 2011-11-30 | 南开大学 | Method for preparing polysilicon thin film by crystal nucleus precontrol laser crystallization method |
| CN103972050A (en) * | 2014-05-14 | 2014-08-06 | 京东方科技集团股份有限公司 | Preparation method of polycrystalline silicon thin film, polycrystalline silicon thin film transistor and array substrate |
| CN104392908A (en) * | 2014-10-17 | 2015-03-04 | 中国地质大学（北京） | Preparation method of polysilicon thin film material |
| CN106653573A (en) * | 2016-12-29 | 2017-05-10 | 浙江合特光电有限公司 | Preparation method of crystal silicon thin film |
| TWI614908B (en) * | 2013-07-24 | 2018-02-11 | 里拉斯公司 | Process for the production of a solar cell |
| CN112310233A (en) * | 2020-10-16 | 2021-02-02 | 泰州隆基乐叶光伏科技有限公司 | Solar cell, production method and cell module |
| CN112563196A (en) * | 2020-11-24 | 2021-03-26 | 惠科股份有限公司 | Manufacturing method of active switch and display panel |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1727525A (en) * | 2005-03-04 | 2006-02-01 | 中国科学院长春光学精密机械与物理研究所 | A kind of method for preparing polysilicon |
-
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- 2010-04-07 CN CN2010101415954A patent/CN101908471A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1727525A (en) * | 2005-03-04 | 2006-02-01 | 中国科学院长春光学精密机械与物理研究所 | A kind of method for preparing polysilicon |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263014A (en) * | 2011-07-29 | 2011-11-30 | 南开大学 | Method for preparing polysilicon thin film by crystal nucleus precontrol laser crystallization method |
| TWI614908B (en) * | 2013-07-24 | 2018-02-11 | 里拉斯公司 | Process for the production of a solar cell |
| CN103972050A (en) * | 2014-05-14 | 2014-08-06 | 京东方科技集团股份有限公司 | Preparation method of polycrystalline silicon thin film, polycrystalline silicon thin film transistor and array substrate |
| CN104392908A (en) * | 2014-10-17 | 2015-03-04 | 中国地质大学（北京） | Preparation method of polysilicon thin film material |
| CN106653573A (en) * | 2016-12-29 | 2017-05-10 | 浙江合特光电有限公司 | Preparation method of crystal silicon thin film |
| CN106653573B (en) * | 2016-12-29 | 2019-11-15 | 浙江合特光电有限公司 | A kind of preparation method of polycrystal silicon film |
| CN112310233A (en) * | 2020-10-16 | 2021-02-02 | 泰州隆基乐叶光伏科技有限公司 | Solar cell, production method and cell module |
| CN112310233B (en) * | 2020-10-16 | 2022-06-14 | 泰州隆基乐叶光伏科技有限公司 | Solar cell, production method and cell module |
| CN112563196A (en) * | 2020-11-24 | 2021-03-26 | 惠科股份有限公司 | Manufacturing method of active switch and display panel |
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Open date: 20101208 |