CN106653573B - A kind of preparation method of polycrystal silicon film - Google Patents
A kind of preparation method of polycrystal silicon film Download PDFInfo
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- CN106653573B CN106653573B CN201611249916.6A CN201611249916A CN106653573B CN 106653573 B CN106653573 B CN 106653573B CN 201611249916 A CN201611249916 A CN 201611249916A CN 106653573 B CN106653573 B CN 106653573B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 103
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 102
- 239000010703 silicon Substances 0.000 title claims abstract description 102
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000010408 film Substances 0.000 claims abstract description 66
- 239000001257 hydrogen Substances 0.000 claims abstract description 46
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 46
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910003910 SiCl4 Inorganic materials 0.000 claims abstract description 19
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000006555 catalytic reaction Methods 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 9
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims abstract description 6
- 230000005855 radiation Effects 0.000 claims abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 241000931526 Acer campestre Species 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052986 germanium hydride Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
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- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of preparation methods of polycrystal silicon film, including step 1: a layer crystal silicon thin film is deposited on silicon wafer；Step 2: using photoetching process, strip window out is exposed on the polycrystal silicon film of silicon wafer；Step 3: one layer of metallic nickel is sputtered in window using magnetron sputtering method on polycrystal silicon film；Step 4: radiation irradiation being carried out against polycrystal silicon film using laser and prepares polycrystal silicon film；Step 5: liner plate being packed into chamber, it is 10 that chamber, which is evacuated to vacuum degree,‑5The epitaxial growth system of support carries out liner plate to be heated to 250 DEG C ~ 450 DEG C；Then hydrogen and SiCl4 are subjected to the catalysis of high temperature heated filament, SiCl4 flow 8ml/min, 15 ~ 25ml/min of hydrogen flowing quantity；Step 6: removing remaining metallic nickel and photoresist with hydrogen chloride, the present invention has the advantages that polycrystal silicon film volume production amount is big, while the production time is short, manufactures high-efficient.
Description
Technical field
The present invention relates to a kind of method for making semiconductor, in particular to a kind of preparation method of polycrystal silicon film.
Background technique
The light-decay characteristic and transformation efficiency of amorphous silicon thin-film solar cell be not high, so that people go to more sight
On polycrystal silicon film.
The application for a patent for invention of Publication No. CN1967882 discloses a kind of system of polysilicon membrane with preferred orientation
Preparation Method, use the photoetching process of microelectronics and magnetron sputtering coating method be formed on the substrate be evenly distributed, size is micron
The alumina particles of magnitude；Amorphous silicon membrane is prepared on the substrate for have alumina particles using magnetically controlled sputter method；By noncrystal membrane true
500 DEG C to 550 DEG C annealing in 2 to 5 minutes are first carried out in the air, then carry out 300 DEG C to 350 DEG C annealing in 20 to 25 minutes, preparation
Obtained polysilicon membrane has the preferred orientation perpendicular to substrate, and temperature is not more than 550 DEG C in whole preparation process.
But above-mentioned technical proposal, the fundamental drawback for not getting rid of metal inducement to the improvement of metal inducement technology were both brilliant
It is not high enough to change rate, thus it is few to generate polycrystal silicon film amount, while heat treatment time is long, during which time-consuming is relatively long, manufactures effect
Rate is low.
Summary of the invention
The object of the present invention is to provide a kind of preparation methods of polycrystal silicon film, when having big polycrystal silicon film volume production amount, production
Between it is short, manufacture it is high-efficient.
Above-mentioned technical purpose of the invention has the technical scheme that a kind of preparation side of polycrystal silicon film
Method, step 1: a layer crystal silicon thin film is deposited on silicon wafer；Step 2: using photoetching process, exposed out on the polycrystal silicon film of silicon wafer
Strip window；Step 3: one layer of metallic nickel is sputtered in window using magnetron sputtering method on polycrystal silicon film；Step 4: using laser
Device carries out radiation irradiation against polycrystal silicon film and prepares polycrystal silicon film；Step 5: liner plate being packed into chamber, chamber is evacuated to vacuum degree and is
10-5The epitaxial growth system of support carries out liner plate to be heated to 250 DEG C~450 DEG C；Then hydrogen and SiCl4 are subjected to high warm
Silk catalysis, SiCl4 flow 8ml/min, 15~25ml/min of hydrogen flowing quantity prepare polycrystal silicon film again；Step 6: being removed with hydrogen chloride
Remove remaining metallic nickel and photoresist.
Through the above technical solutions, deposit a layer crystal silicon thin film on first silicon wafer, then metal inducement immobilization method and laser
The crystallization one layer crystal silicon thin film of fast deposition on polycrystal silicon film in advance, then continues through hydrogen on more films and SiCl4 makees
The deposition that polycrystal silicon film is carried out for reactant gas source removes metallic nickel and photoresist finally by hydrogen chloride.Period with hydrogen and
SiCl4 is as reactant gas source, under the conditions of 15~25ml/min of hydrogen flowing quantity, belongs to lower flow velocity, therefore only have to silicon wafer
There is certain extent of corrosion, while SiCl4 there can be time enough to be stranded on liner plate to be decomposed in chamber indoor moveable,
And then a large amount of polycrystal silicon film is obtained, and when hydrogen flowing quantity is excessive, SiCl4, which is difficult on silicon wafer sufficiently decompose, to be also just not easy
Obtain certain thickness polycrystal silicon film；But too low hydrogen flow rate will be difficult to remove the active Cl of silicon chip surface, cause to live
Property Cl remains in silicon chip surface, hinders the precipitation of Si.
The present invention is further: in the step 5, hydrogen flowing quantity 20ml/min.
Through the above technical solutions, hydrogen flowing quantity 20ml/min be it is best, certain thickness large area crystal silicon can be obtained
Film.
The present invention is further: in the step 1, silicon wafer is subjected to RCA cleaning, is then removed oxide layer processing,
It is cleaned after processing using deionized water, and by being dried with nitrogen to obtain liner plate；Then the liner plate of step 1 is quickly charged with chamber,
It is 10 that chamber, which is evacuated to vacuum degree,-5The epitaxial growth system of support carries out liner plate to be heated to 150 DEG C~250 DEG C；Then by hydrogen and
SiH4 carries out the catalysis of high temperature heated filament, SiH4 flow 8ml/min, hydrogen flowing quantity 60ml/min.
The present invention is further: in the step 1, being heated to 200 DEG C to liner plate.
Through the above technical solutions, generally when being deposited using SiH4 and hydrogen as reaction source gas, hydrogen flowing quantity mistake
Hour can only obtain amorphous silicon membrane, and the technical program controls in hydrogen flowing quantity hydrogen flowing quantity phase under the conditions of 60ml/min
To larger, it can be realized amorphous silicon network structure and change, transformation obtains crystal silicon structure to obtain polycrystal silicon film；Liner plate simultaneously
Temperature is excessively high or the too low deposition velocity that will affect silicon polycrystalline film, and when liner plate is heated to 200 DEG C, can quickly sink
Product goes out certain thickness silicon polycrystalline film.
The present invention is further: the laser in the step 4, and the laser medium used is KrF；It is corresponding to laser medium
Optical maser wavelength be 249nm, pulsewidth is between 10~50ns.
Through the above technical solutions, laser beam is radiated the surface of polycrystal silicon film, make polycrystal silicon film and laser contact
Surface Si absorbs laser energy, and temperature, which steeply rises, reaches fusing point.Laser beam is moved forward with certain repetition rate, melting
The cooling recrystallization of surface Si, form polycrystal silicon film.
The present invention is further: the removing oxide layer processing includes that silicon wafer is placed in chamber, and gas is passed through into chamber
Stop and stand 10min after body GeH4 and hydrogen 5min, then be passed through gas HCl and hydrogen 2min into chamber, etches away residual
Ge monocrystalline on silicon wafer.
Through the above technical solutions, Ge monocrystalline is in acid condition, chemical reaction can occur with hydrogen and generate GeH4 gas
Body, and chamber is taken out of by gas HCl and hydrogen.
In summary: the present invention has the advantages that lower: a layer crystal silicon thin film is deposited on first silicon wafer, then metal inducement immobilization
Method and the laser crystallization one layer crystal silicon thin film of fast deposition on polycrystal silicon film in advance, then continued through on more films hydrogen and
SiCl4 carries out the deposition of a large amount of polycrystal silicon films as reactant gas source, has the advantages that polycrystal silicon film volume production amount is big, and when production
Between it is short, manufacture it is high-efficient；And it is intended to approach under conditions of hydrogen flowing quantity is 20ml/min in the step 5.
Specific embodiment
Invention is further described in detail below.
It formulates and implements example 1~6 and comparative example 1~3 is tested.
Operation specific as follows: the useful highly diluted of method of traditional low temperature manufacture polysilicon only comparative example 1: is used only
Silane radio-frequency glow discharge plasma chemical vapor deposition prepares polycrystal silicon film.
Comparative example 2: polycrystal silicon film is prepared only with laser induced crystallization.
Comparative example 3: step 1: using photoetching process, strip window out is exposed on the polycrystal silicon film of silicon wafer；Step 2: adopting
One layer of metallic nickel is sputtered on polycrystal silicon film in window with magnetron sputtering method；Step 3: being carried out using laser against polycrystal silicon film
Radiation irradiation prepares polycrystal silicon film；Step 4: liner plate being packed into chamber, chamber is evacuated to the epitaxial growth system that vacuum degree is 10-5 support
System, carries out liner plate to be heated to 250 DEG C~450 DEG C；Then hydrogen and SiCl4 are subjected to the catalysis of high temperature heated filament, SiCl4 flow
8ml/min, 15~25ml/min of hydrogen flowing quantity；Step 5: removing remaining metallic nickel and photoresist with hydrogen chloride.
Embodiment 1: a kind of preparation method of polycrystal silicon film, step 1: a layer crystal silicon thin film is deposited on silicon wafer, it is main to grasp
As: silicon wafer is subjected to RCA cleaning, oxide layer processing is then removed, is cleaned after processing using deionized water, and pass through nitrogen
Air-blowing is dry to obtain liner plate；Then the liner plate of step 1 is quickly charged with chamber, chamber is evacuated to the epitaxial growth that vacuum degree is 10-5 support
System carries out liner plate to be heated to 250 DEG C；Then hydrogen and SiH4 are subjected to the catalysis of high temperature heated filament, SiH4 flow 8ml/min,
Hydrogen flowing quantity 60ml/min；Step 2: using photoetching process, strip window out is exposed on the polycrystal silicon film of silicon wafer；Step 3: adopting
One layer of metallic nickel is sputtered on polycrystal silicon film in window with magnetron sputtering method；Step 4: being carried out using laser against polycrystal silicon film
Radiation irradiation prepare polycrystal silicon film, used in laser medium be KrF；Optical maser wavelength corresponding with laser medium is 249nm,
Pulsewidth is between 10~50ns；Step 5: liner plate is packed into chamber, chamber is evacuated to the epitaxial growth system that vacuum degree is 10-5 support,
Liner plate is carried out to be heated to 250 DEG C；Then hydrogen and SiCl4 are subjected to the catalysis of high temperature heated filament, SiCl4 flow 8ml/min, hydrogen
Flow 15ml/min prepares polycrystal silicon film again；Step 6: removing remaining metallic nickel and photoresist with hydrogen chloride.
Embodiment 2: a kind of preparation method of polycrystal silicon film, difference from example 1 is that: in the step 5, hydrogen
Throughput 20ml/min；That is step 5: liner plate is packed into chamber, chamber is evacuated to the epitaxial growth system that vacuum degree is 10-5 support, right
Liner plate carries out being heated to 400 DEG C；Then hydrogen and SiCl4 are subjected to the catalysis of high temperature heated filament, SiCl4 flow 8ml/min, hydrogen stream
Amount 20ml/min prepares polycrystal silicon film again.
Embodiment 3: a kind of preparation method of polycrystal silicon film, difference from example 1 is that: in the step 5, hydrogen
Throughput 50ml/min；That is step 5: liner plate is packed into chamber, chamber is evacuated to the epitaxial growth system that vacuum degree is 10-5 support, right
Liner plate carries out being heated to 400 DEG C；Then hydrogen and SiCl4 are subjected to the catalysis of high temperature heated filament, SiCl4 flow 8ml/min, hydrogen stream
Amount 50ml/min prepares polycrystal silicon film again.
Embodiment 4: a kind of preparation method of polycrystal silicon film, with embodiment 2 the difference is that: it is right in the step 1
Liner plate is heated to 200 DEG C；That is a layer crystal silicon thin film, primary operational step 1: are deposited on silicon wafer are as follows: it is clear that silicon wafer is carried out RCA
It washes, is then removed oxide layer processing, is cleaned after processing using deionized water, and by being dried with nitrogen to obtain liner plate；Then
The liner plate of step 1 is quickly charged with chamber, chamber is evacuated to the epitaxial growth system that vacuum degree is 10-5 support, heats to liner plate
To 200 DEG C；Then hydrogen and SiH4 are subjected to the catalysis of high temperature heated filament, SiH4 flow 8ml/min, hydrogen flowing quantity 60ml/min.
Embodiment 5: a kind of preparation method of polycrystal silicon film, with embodiment 4 the difference is that: it is right in the step 1
Liner plate is heated to 400 DEG C；That is a layer crystal silicon thin film, primary operational step 1: are deposited on silicon wafer are as follows: it is clear that silicon wafer is carried out RCA
It washes, is then removed oxide layer processing, is cleaned after processing using deionized water, and by being dried with nitrogen to obtain liner plate；Then
The liner plate of step 1 is quickly charged with chamber, chamber is evacuated to the epitaxial growth system that vacuum degree is 10-5 support, heats to liner plate
To 200 DEG C；Then hydrogen and SiH4 are subjected to the catalysis of high temperature heated filament, SiH4 flow 8ml/min, hydrogen flowing quantity 60ml/min.
Embodiment 6: a kind of preparation method of polycrystal silicon film, the difference is that, step 4 is swashed using Ar+ with embodiment 5
Light device；That is step 4: carrying out radiation irradiation against polycrystal silicon film using Ar+ laser and prepare polycrystal silicon film, corresponding to laser medium
Optical maser wavelength be 488nm.
Preparation method characterization: it is tested using the preparation method of Examples 1 to 6 and comparative example 1~3, every group of test 10
Block measures the thickness of the polycrystal silicon film in 1 hour in every group of experiment on silicon wafer, as a result as shown in Table 1.
The thickness mean value and its standard deviation of 1 polycrystal silicon film of table
This specific embodiment is only explanation of the invention, is not limitation of the present invention, those skilled in the art
Member can according to need the modification that not creative contribution is made to the present embodiment after reading this specification, but as long as at this
All by the protection of Patent Law in the scope of the claims of invention.
Claims (4)
1. a kind of preparation method of polycrystal silicon film, which is characterized in that step 1: a layer crystal silicon thin film is deposited on silicon wafer, by silicon wafer
RCA cleaning is carried out, oxide layer processing is then removed, is cleaned after processing using deionized water, and by being dried with nitrogen to obtain
Liner plate；Then the liner plate of step 1 is quickly charged with chamber, it is 10 that chamber, which is evacuated to vacuum degree,-5The epitaxial growth system of support, to liner plate
It carries out being heated to 150 DEG C ~ 250 DEG C；Then hydrogen and SiH4 are subjected to the catalysis of high temperature heated filament, SiH4 flow 8ml/min, hydrogen stream
Measure 60ml/min；Step 2: using photoetching process, strip window out is exposed on the polycrystal silicon film of silicon wafer；Step 3: using magnetic control
Sputtering method sputters one layer of metallic nickel in window on polycrystal silicon film；Step 4: radiation photograph is carried out against polycrystal silicon film using laser
It penetrates and prepares polycrystal silicon film；Step 5: liner plate being packed into chamber, it is 10 that chamber, which is evacuated to vacuum degree,-5The epitaxial growth system of support, to lining
Plate carries out being heated to 250 DEG C ~ 450 DEG C；Then hydrogen and SiCl4 are subjected to the catalysis of high temperature heated filament, SiCl4 flow 8ml/min, hydrogen
15 ~ 25ml/min of throughput prepares polycrystal silicon film, hydrogen flowing quantity 20ml/min again；Step 6: removing remaining gold with hydrogen chloride
Belong to nickel and photoresist.
2. a kind of preparation method of polycrystal silicon film according to claim 1, which is characterized in that in the step 1, to liner plate
It is heated to 200 DEG C.
3. a kind of preparation method of polycrystal silicon film according to claim 2, which is characterized in that the laser in the step 4
Device, the laser medium used are KrF；Optical maser wavelength corresponding with laser medium is 249nm, and pulsewidth is between 10~50ns.
4. a kind of preparation method of polycrystal silicon film according to claim 3, which is characterized in that the removing oxide layer processing packet
It includes and silicon wafer is placed in chamber, be passed through into chamber after gas GeH4 and hydrogen 5min and stop and stand 10min, then to chamber
It is inside passed through gas HCl and hydrogen 2min, etches away the Ge monocrystalline of residual silicon on piece.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101086962A (en) * | 2006-03-13 | 2007-12-12 | 香港科技大学 | Metal-induced crystallization of amorphous silicon |
| CN101908471A (en) * | 2010-04-07 | 2010-12-08 | 江苏华创光电科技有限公司 | Method for preparing large-area polycrystalline film |
| CN104681494A (en) * | 2013-11-28 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor memory device and preparation method thereof |
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