CN101897002B - Plasma damage free sputter gun, sputter, plasma process apparatus and film-forming method - Google Patents
Plasma damage free sputter gun, sputter, plasma process apparatus and film-forming method Download PDFInfo
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- CN101897002B CN101897002B CN2007801018848A CN200780101884A CN101897002B CN 101897002 B CN101897002 B CN 101897002B CN 2007801018848 A CN2007801018848 A CN 2007801018848A CN 200780101884 A CN200780101884 A CN 200780101884A CN 101897002 B CN101897002 B CN 101897002B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
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Abstract
Provided are a plasma-damage-free sputter gun, which is capable of forming a layer at high speed, a sputter apparatus including the sputter gun, a plasma processing apparatus using the sputter gun, and a method of forming a layer using the sputter gun. The sputter gun includes: a yoke plate having a single-sided or double-sided opening; and a plurality of magnets disposed on the yoke plate at regular intervals. Each of the magnets includes upper and lower portions that are integrally formed and have different magnetic poles, and the magnets are arranged in a line. Accordingly, it is possible to form a layer at high speed without causing plasma damage using the above-described gun, apparatuses, and method.
Description
Technical field
The present invention relates to a kind ofly can and a kind ofly utilize said sputter gun to come cambial method with the cambial plasma damage free sputter gun of high speed, a kind of sputter equipment that comprises said sputter gun, a kind of plasma processing apparatus that utilizes said sputter gun; More specifically; Relate to a kind of plasma damage free sputter gun; Wherein, with a plurality of magnets of ladder arranged in form, and be different from conventional in the center of sputter gun to target sputter gun (Facing Target Sputter Gun); With this plasma density that increases the sputter gun middle part, making can be with the high speed cambium layer in plasma damage free sputter technology; Relate to a kind of sputter equipment of said sputter gun, a kind of plasma processing apparatus and a kind of next cambial method of said sputter gun of utilizing of utilizing said sputter gun of comprising.
Background technology
In general, the manufacturing of organic electro-optic device or organic transistor comprises the formation metal electrode layer.As what known, sputtering technology is to form the typical method of thin metal layer at a high speed.Sputtering technology is widely used in and forms the thin metal layer that uses in flat-panel display device (FPD) and various electronic device, and said flat-panel display device is thin film transistor LCD device (TFT LCD) and organic light emitting diode device (OLED) for example.
In sputter equipment, in the vacuum of sputtering chamber, produce plasma.The plasma cation is with the negative potential attracts of the negative electrode of target.Plasma cation collision target and be split into little particle and particle is deposited on the substrate.
The plasma cation splits into little particle and is called as sputter.In the situation of non-reacted sputtering technology, plasma is made up of inert gas, for example argon Ar.In the situation of reactive sputtering technology, plasma is to have oxygen O
2Plasma, or have oxygen O
2Plasma with the mixture of inert gas.
In order to improve the effect of sputter, using magnet near the target so that plasma remains on the target with magnetic field.The introduction by magnetic field plasma electron gets into particular path.Plasma electron makes neutral gas (like argon Ar) ionization and produces cation on particular path.Cation is bigger than electron mass, does not therefore receive influence of magnetic field fully.Yet cation has dropped on the target of cathodic process and sputtering target.The ionization of neutral gas occurs in magnetic vector substantially and extends to the position that is parallel to the target surface.Because the most intensive in this position plasma, therefore target consumes at most on this position.
That is to say that sputtering technology comprises and produces plasma and the Ar ion of plasma is collided to sputter composite material (layer forming material) with target.Yet the particle that contains in the plasma has high energy, and the particle that sputters also has high energy.Therefore, when having the particle encounter substrate of high energy, energy is sent to substrate, makes substrate can be heated to up to about 200 ℃ temperature, and then sustains damage.
And when having 100eV or more high-octane particle encounter organic thin layer, the structure of organic thin layer, optics and electric property may receive bad influence.Particularly; When utilizing sputtering technology on organic thin layer, to form metal level such as Al layer, Mg-Ag layer or Ag layer to form the negative electrode of OLED; The hole injection layer, hole-transporting layer and the emission layer collision that are made up of organic material have the plasma particle of high energy, thereby on electric and optical characteristics, degenerate to some extent.
In order to overcome these problems, proposed a kind ofly recently to the target sputtering technology, therefore might in the manufacturing of OLED device, adopt sputtering technology.
Fig. 1 a to Fig. 1 c shows conventional rectangle to the magnet arrangement method of target sputter gun and the sketch map of flux density distribution.
Conventional is to make through the hollow magnet of arranging annular or rectangle to the target sputter gun.Yoke plate (Yoke Plate) is attached to item side and the bottom side of hollow magnet to make the magnetic field uniformization of hollow magnet haply.Like this, the magnetic flux of hollow magnet can be by homogenizing, but the flux density at magnet middle part reduces, thereby has reduced plasma intensity.
And, can find out that from Fig. 1 a to Fig. 1 c because magnet arrangement is in the periphery of target, the periphery of sputter gun has high flux density and the middle part of sputter gun has small throughput density, has therefore reduced a layer deposition rate.Although charged particle can be fettered because of the magnetic flux that is connected between a sputter gun and another sputter gun, because of the small throughput density in the middle part of the sputter gun can not be to form thin layer at a high speed.
Therefore, need a kind of new plasma damage free sputter gun of development, said plasma damage free sputter gun increases the flux density at sputter gun middle part to improve the plasma particle that layer deposition rate and constraint have high energy.
The instance of new sputter equipment is disclosed among the open No.2003-0048750 of Korean Patent, the open No.2005-0058238 of the Korean Patent on June 16th, 2005 and the open No.2005-0082411 of the Korean Patent on August 23rd, 2005 on June 25th, 2003.
Fig. 2 a and Fig. 2 b are the sketch mapes of the magnetic system 1 that on target 2, moves, and it is disclosed among the open No.2005-0082411 of Korean Patent.
Magnetic system 1 comprises the peripheral magnet 3 and bar shaped internal magnets 4 of frame shape.The peripheral magnet 3 of frame shape comprises two strip magnets 5 and 6 and two billet shape magnets 7 and 8.Billet shape magnet 7 and 8 and strip magnet 5 and 6 at right angles arrange.For example, bar-shaped magnet 5,6,7 and 8 is a S utmost point magnet, and internal magnets 4 is a N utmost point magnet.The magnetic field of on the side surface of magnetic system 1, extending is bent to form parabola, and said parabola passes target 2, and extends to internal magnets 4 from peripheral magnet 3 beginning.Because said magnetic field, electrode is easy to form plasmatron 9, and the positive charged in the plasmatron 9 (for example Ar ion) quickens to arrive target 2.Plasmatron 9 comprises vertical 16 and 17 and horizontal zone 18 and 19.
The Ar ion makes the sightless rear section corresponding to plasmatron 9 of target 2 be cleaved into particle, makes in target 2, to have formed the sunk part that has corresponding to the shape of plasmatron 9.When magnetic system 1 moved to the right side with the direction of arrow 10 on fixing target 2, the aft section of target 2 was etched except that its outward flange in an identical manner.
Fig. 2 b is the profile along the line I-I intercepting of Fig. 2 a.Referring to Fig. 2 b, magnetic field 30 and 31 is passed target 2 and is formed parabola.The substrate 20 of particle that is coated with the division of target 2 places under the target 2.Be in the space between target 2 and the substrate 20 near the unit that makes target 2 place to be formed in the above described manner the magnetic system 1 the particle division that makes target 2 through cation quicken being surpassed the plasma that the anion (not shown) produces.Whole device shown in Fig. 2 a and the 2b places vacuum film coating chamber 29.
Yet, in above-mentioned conventional sputter equipment, be difficult to control plasma density and layer deposition rate.
Summary of the invention
Technical problem
The present invention relates to plasma damage free sputter gun, the particle with high energy that said plasma damage free sputter gun will be produced by the sputter thin layer is strapped between target, thereby carries out plasma damage free sputter technology; Relate to the sputter equipment that comprises said sputter gun, use the plasma processing apparatus of said sputter gun and utilize the cambial method of said sputter gun.
The invention still further relates to plasma damage free sputter gun, wherein, at the middle part of sputter gun with ladder arranged in form magnet so that the flux density maximization, and improve the deposition rate of thin layer; Relate to the sputter equipment that comprises said sputter gun, use the plasma processing apparatus of said sputter gun and utilize the cambial method of said sputter gun.
Technological means
One side of the present invention provides a kind of sputter gun, comprising: yoke plate, and it has one-sided opening or bilateral opening; And with a plurality of magnets of pitch arrangement on yoke plate of rule.In the magnet each comprises the upper and lower, and said upper and lower forms integral body and has different magnetic poles, and magnet arrangement becomes a row.
In the magnet each can have " 1 " shape.
In the magnet each can have square.
The quantity of magnet can control according to layer deposition rate.
Sputter gun can comprise the module that is connected to sputter gun and use.
Module is removable.
In the magnet each can be electromagnet or permanent magnet.
Another aspect of the present invention provides a kind of sputter equipment, comprising: a pair of sputter gun, each sputter gun comprise the yoke plate that has one-sided opening or bilateral opening and with a plurality of magnets of pitch arrangement on yoke plate of rule; Target is installed on the pair of yoke plates respectively; And power supply, be used for supplying power to target.In the magnet each comprises the upper and lower, and said upper and lower forms integral body and has different magnetic poles, and magnet arrangement becomes a row.
Another aspect of the present invention provides a kind of plasma treatment appts, comprising: vacuum chamber; Substrate support is used at the vacuum chamber bearing substrate; A pair of sputter gun, it is towards substrate, and each sputter gun comprises the yoke plate that has one-sided opening or bilateral opening and with a plurality of magnets of pitch arrangement on yoke plate of rule; Target is installed on the pair of yoke plates respectively; The rifle supporting member is used to support a pair of sputter gun; And power supply, be used for supplying power to target.In the magnet each comprises the upper and lower, and said upper and lower forms integral body and has different magnetic poles, and magnet arrangement becomes a row.
Another aspect of the present invention provides a kind of cambial method of plasma processing apparatus of utilizing.Plasma processing apparatus comprises: vacuum chamber; Substrate support is used at the vacuum chamber bearing substrate; A pair of sputter gun, it is towards substrate, and each sputter gun comprises the yoke plate that has one-sided opening or bilateral opening and with a plurality of magnets of pitch arrangement on yoke plate of rule; Target is installed on the pair of yoke plates respectively; The rifle supporting member is used to support a pair of sputter gun; And power supply, be used for supplying power to target.Said method comprises: substrate is installed on the substrate support; Size Control according to substrate is included in the number of the magnet in a pair of sputter gun and the spacing between magnet; Supply power to target; And produce plasma in the center of target because of target and a pair of sputter gun.In the magnet each comprises the upper and lower, and said upper and lower forms integral body and has different magnetic poles, and magnet arrangement becomes a row.
Beneficial effect
According to aforesaid the present invention, when the present invention is applied to be formed with in the technology of metal electrode layer of OLED (OLED) device, can be with the high speed deposition metal electrode layer, thus reduced a layer sedimentation time.And, owing to can therefore can not produce plasma damage fast 2 to the 5 times speed of target sputter gun is come stringer than routine to form metal electrode layer at a high speed according to plasma damage free sputter gun of the present invention.
And, can fetter charged particle more effectively with high energy.The increase of flux density has improved the constraint effect of charged particle.From the routine shown in Fig. 1 a to 1c to finding out the contrast of the plasma damage free sputter gun of target sputter gun and Fig. 3 a to 3c or 4a to 4c; Because the magnet arrangement of ladder form is impelled the center of flux at sputter gun, therefore can effectively the charged particle with high energy be fettered between target.The result is that available high direct current (DC) or radio frequency (RF) power supply carry out plasma damage free sputter technology.
According to the present invention, can make the realizes maximal efficiency of target.The usefulness that is well known that common sputter gun is less than 30%.Yet because of plasma accumulates in the sputter gun center, the sputter gun that comprises the magnet that is arranged as the ladder form according to the present invention can have 70% or higher target usefulness.Because plasma is producing on the entire target, so the sputter entire target, thereby make the realizes maximal efficiency of target between target.
And, when utilization has the metal electrode according to sputter equipment depositing high-quality on organic material of sputter gun of the present invention, the OLED device that can realize having good electrical and optical characteristics.Typically, the thin metal layer Billy who utilizes sputtering technology to obtain has higher density with the thin metal layer that hot vaporizer obtains.Therefore, owing between organic material and thin metal layer, have fine and close combination interface, the OLED device that contains the thin metal layer of sputter can have good electric and optical characteristics.
In addition, comprise that according to of the present invention sputter gun with the magnet of ladder arranged in form can be applicable to the manufacturing of large scale OLED device.It is very difficult that the point source Al hot vaporizer that application is used is at present made the large-area OLEDs device.Yet, through increasing quantity, can easily make the large scale sputter equipment according to the magnet of sputter gun of the present invention, make sputter gun according to the present invention can be used for making the large-area OLEDs device then.
And, even substrate or vertically mobile perhaps from moving to another border district on one side according to sputter gun of the present invention also can be made the large-area OLEDs device.
And, when a plurality of sputter guns according to the present invention are installed in the sputter equipment, the layer of depositing large-area at a terrific speed.
Description of drawings
Fig. 1 a to Fig. 1 c illustrates conventional rectangle to the magnet arrangement method of target sputter gun and the sketch map of flux density distribution;
Fig. 2 a and Fig. 2 b are the sketch mapes that is illustrated in the magnetic system that moves the target top;
Fig. 3 a to Fig. 3 c illustrates to have the sketch map that the flux density with the plasma damage free sputter gun of the magnet of ladder arranged in form and said sputter gun distributes according to an exemplary embodiment of the present invention;
Fig. 4 a to Fig. 4 c illustrates to have the sketch map that the flux density with the plasma damage free sputter gun of the magnet of ladder arranged in form and said sputter gun distributes according to the preferred embodiment of the invention;
Fig. 5 be illustrate conventional to the target sputter gun and have chart according to an exemplary embodiment of the present invention with the comparative result on layer deposition rate between the plasma damage free sputter gun of the magnet of ladder arranged in form; And
Fig. 6 is the view that the structure of the plasma processing apparatus that comprises plasma damage free sputter gun according to an exemplary embodiment of the present invention is shown.
Embodiment
Describe preferred exemplary embodiment of the present invention in conjunction with the drawings in detail, those of ordinary skill in the art will understand above-mentioned and other purposes of the present invention, feature and advantage.
At first, notion of the present invention will be described.
The present invention provides a kind of sputter gun, and said sputter gun can be strapped in the particle with high energy that in sputtering technology, produces between target, and the damage of the thin layer that prevents owing to particle the collision of substrate to be caused.With routine to the target sputter gun different be that sputter gun according to the present invention is included in sputter gun middle part and increases the flux density at sputter gun middle part with the magnet of ladder arranged in form, thereby increases the deposition rate of plasma density and thin layer.According to the present invention, the layout of the ladder form through changing magnet, not only may command plasma density, also may command deposition rate.
Hereinafter will combine accompanying drawing fully to describe the present invention, accompanying drawing illustrates exemplary embodiment of the present invention.
And use identical drawing reference numeral to represent components identical, and will save the description of repetition.
Fig. 3 a to Fig. 3 c illustrates to have the sketch map that the flux density with the plasma damage free sputter gun of the magnet of ladder arranged in form and said sputter gun distributes according to an exemplary embodiment of the present invention.
Referring to Fig. 3 a to Fig. 3 c, when according to the present invention during, be different from conventionally to the target sputter gun with ladder arranged in form magnet, the middle part of sputter gun is filled with some magnets, can increase the flux density at sputter gun middle part like this.
In order to make being evenly distributed of magnetic flux, the thin yoke plate that is formed by cast iron is attached to the top side and the bottom side of magnet, makes between target, can produce the high density flux amount equably.Like this,, produce high-density plasma in the center of target when direct current (DC) power supply or radio frequency (RF) when power supply is applied to target, thereby because said high-density plasma, target is with high-speed sputtering.
Particularly, because the high-density plasma sputter that target produces because of the pinwheel place, so the usefulness of target improves.And, because of the gathering of the flux that gets into the sputter gun center makes and routine the target sputter gun is compared that charged particle is fettered more effectively, therefore be different from conventional to the target sputter gun, can be to form thin layer at a high speed.
Sputter gun shown in Fig. 3 a to Fig. 3 c comprises the yoke plate with one-sided opening or bilateral opening, and with a plurality of magnets on yoke plate of the pitch arrangement of rule (for example, shown in Figure 35 magnets).Each of magnet comprises the upper and lower, and said upper and lower forms integral body, and has different magnetic poles.5 magnet arrangement of sputter gun become a row.
In the sputter gun shown in Fig. 3 a to Fig. 3 c, constitute single module as the electromagnet of " 1 " shape or 5 magnets of permanent magnet.Therefore, can control deposition rate or plasma density through the quantity of adjustment magnet or the spacing of regulating between magnet, and said magnet can connect as module.
Fig. 4 a to Fig. 4 c illustrates to have the sketch map that the flux density with the plasma damage free sputter gun of the magnet of ladder arranged in form and said sputter gun distributes according to the preferred embodiment of the invention.
When only be " 1 " shape electromagnet during shown in Fig. 3 a to Fig. 3 c, can increase the flux density at pinwheel place, but reduce the flux density of target periphery with the ladder arranged in form.Be head it off, also can arrange magnet, thereby increase the flux density of entire target with the encirclement target.
In other words, shown in Fig. 4 a to Fig. 4 c, use square magnet, so not only therefore the periphery of the center of target but also target makes the usefulness and the maximization of layer deposition rate of target also by sputter.
Similar with the sputter gun shown in Fig. 3 a to Fig. 3 c, in the sputter gun shown in Fig. 4 a to Fig. 4 c, can control deposition rate or plasma density through the quantity of adjustment square magnet or the spacing of regulating between magnet, and said magnet can connect as module.
Fig. 5 be illustrate conventional to the target sputter gun and have chart according to an exemplary embodiment of the present invention with the comparative result on Al veneer speed between the plasma damage free sputter gun of the magnet of ladder arranged in form.
Referring to Fig. 5, can find out in plasma damage free sputter gun according to the present invention since in the sputter gun center with ladder arranged in form magnet, increased the plasma density of the core of target, thereby made the deposition rate of Al thin layer maximum.In order to improve the uniformity of Al layer, magnet is arranged it is important like ladder form how.Particularly, along with reducing (that is, along with the increase of number of magnets) with the distance between the magnet of ladder arranged in form, flux density increases and improves the deposition rate of Al layer and the uniformity of Al layer.
According to the present invention,, can increase number with the magnet of ladder arranged in form even the size of substrate increases.Therefore, plasma damage free sputter gun according to the present invention can be applicable to the manufacturing of large scale Organic Light Emitting Diode (OLED) device.
Hereinafter will combine Fig. 6 to describe to have used the plasma processing apparatus of the sputter gun shown in Fig. 3 a to 3c or Fig. 4 a to Fig. 4 c.
Fig. 6 illustrates to comprise the view of the structure of the plasma processing apparatus of plasma damage free sputter gun according to an exemplary embodiment of the present invention.
Referring to Fig. 6, plasma processing apparatus comprises vacuum chamber 100, and it is filled with reacting gas; Substrate support 102, it is bearing substrate 101 in vacuum chamber 100; A pair of sputter gun 104, each sputter gun comprise yoke plate with one-sided opening or bilateral opening and with a plurality of magnets of pitch arrangement on yoke plate of rule; Target 105, it is installed on each yoke plate in the pair of yoke plates; Rifle supporting member 103, it supports a pair of sputter gun 104; And the power supply (not shown), it is to target 105 power supplies.
Each of sputter gun 104 shown in Figure 6 has and combines Fig. 3 a to 3c or the described identical structure of Fig. 4 a to Fig. 4 c.Sputter gun 104 is towards each other, and target 105 places respectively on the opposite face of sputter gun 104.
In plasma processing apparatus shown in Figure 6, the substrate 101 that is installed on the substrate support 102 can move to a pair of sputter gun 104 through the common shift unit that is used for substrate support 102 by arrow 110 indicated directions.Because plasma processing apparatus has used comparable routine that fast 2 to the 5 times speed of target sputter gun is come a pair of sputter gun 104 of stringer, therefore said plasma processing apparatus is easy to be applied in the substrate that is used for the large-area OLEDs device.
And; The substrate that promptly is used in the large-area OLEDs device is fixed; But because the sputter gun 104 that is installed on the rifle supporting member 103 can move through common shift unit by arrow 120 indicated directions, therefore plasma processing apparatus according to the present invention is easy to be applied in the substrate that is used for large scale OLED device.
The cambial method of plasma processing apparatus shown in Figure 6 of utilizing hereinafter will be described.
At first, substrate 101 is installed on the substrate support 102.
Quantity and spacing according to the magnet that is equipped with in a pair of sputter gun 104 shown in Fig. 3 a to 3c or Fig. 4 a to Fig. 4 c of the size Control of substrate 101.
In other words, adjust the quantity of magnet or the spacing between magnet according to the size or the required plasma density of substrate 101.And, determine whether mobile substrate 101 or sputter gun 104.
Afterwards, as in common layer depositing operation,, make because of target 105 and a pair of sputter gun 104 produce plasma in the center of target 105, thereby make the metal electrode that for example is used for OLED to target 105 power supplies.
The present invention can be applicable to the manufacturing of organic electro-optic device or organic transistor.
Though illustrate and described the present invention with reference to the specific exemplary embodiment of the present invention; Yet it will be understood by those skilled in the art that; Under the situation that does not break away from the spirit of the present invention that is defined by the following claims and scope, can carry out various changes in form and details.
Claims (34)
1. sputter gun comprises:
Yoke plate, said yoke plate have one-sided opening or bilateral opening; And
A plurality of magnets, said a plurality of magnets with the pitch arrangement of rule on said yoke plate,
Wherein, each in said a plurality of magnets comprises the upper and lower, and said upper and lower forms integral body, and the magnetic polarity of said upper and lower differs from one another, and said magnet arrangement becomes a row.
2. sputter gun according to claim 1, wherein, each in the said magnet has " 1 " shape.
3. sputter gun according to claim 1, wherein, each in the said magnet has square.
4. according to claim 2 or 3 described sputter guns, wherein, the quantity of said magnet controls according to layer deposition rate.
5. sputter gun according to claim 4, said sputter gun comprise the module that is connected to said sputter gun and uses.
6. sputter gun according to claim 5, wherein, said module is removable.
7. sputter gun according to claim 6, wherein, each in the said magnet is electromagnet or permanent magnet.
8. sputter equipment comprises:
A pair of sputter gun, each said sputter gun comprise the yoke plate that has one-sided opening or bilateral opening and with a plurality of magnets of pitch arrangement on said yoke plate of rule;
Target is installed in respectively on the said pair of yoke plates; And
Power supply is used for to said target power supply,
Wherein, each in said a plurality of magnets comprises the upper and lower, and said upper and lower forms integral body, and the magnetic polarity of said upper and lower differs from one another, and said magnet arrangement becomes a row.
9. sputter equipment according to claim 8, wherein, said a pair of sputter gun is towards each other.
10. sputter equipment according to claim 9, wherein, said target is installed in respectively on the opposite face of said sputter gun.
11. sputter equipment according to claim 10, wherein, each in the said magnet has " 1 " shape.
12. sputter equipment according to claim 10, wherein, each in the said magnet has square.
13. according to claim 11 or 12 described sputter equipments, wherein, the quantity of said magnet controls according to layer deposition rate.
14. sputter equipment according to claim 13, wherein, each in the said sputter gun comprises the module that is connected to corresponding sputter gun and uses.
15. sputter equipment according to claim 14, wherein, said sputter gun is removable.
16. a plasma treatment appts comprises:
Vacuum chamber;
Substrate support is used at said vacuum chamber internal support substrate;
A pair of sputter gun, it is towards said substrate, and each said sputter gun comprises the yoke plate that has one-sided opening or bilateral opening and with a plurality of magnets of pitch arrangement on said yoke plate of rule;
Target is installed in respectively on the said pair of yoke plates;
The rifle supporting member is used to support said a pair of sputter gun; And
Power supply is used for to said target power supply,
Wherein, each in said a plurality of magnets comprises the upper and lower, and said upper and lower forms integral body, and the magnetic polarity of said upper and lower differs from one another, and said magnet arrangement becomes a row.
17. device according to claim 16, wherein, said a pair of sputter gun is towards each other.
18. device according to claim 17, wherein, said target is installed in respectively on the opposite face of said sputter gun.
19. device according to claim 18, wherein, each in the said magnet has " 1 " shape.
20. device according to claim 18, wherein, each in the said magnet has square.
21. according to claim 19 or 20 described devices, wherein, the quantity of said magnet controls according to layer deposition rate.
22. device according to claim 21, wherein, each in the said sputter gun comprises the module that is connected to corresponding sputter gun and uses.
23. device according to claim 22, wherein, said sputter gun is removable.
24. device according to claim 23, wherein, said sputter gun is used to make the metal electrode of Organic Light Emitting Diode.
25. device according to claim 24, wherein, said Organic Light Emitting Diode is used in the large tracts of land organic light emitting diode device.
26. one kind is utilized the cambial method of plasma processing apparatus, said plasma processing apparatus comprises: vacuum chamber; Substrate support is used at said vacuum chamber internal support substrate; A pair of sputter gun, it is towards said substrate, and each said sputter gun comprises the yoke plate that has one-sided opening or bilateral opening and with a plurality of magnets of pitch arrangement on said yoke plate of rule; Target is installed in respectively on the said pair of yoke plates; The rifle supporting member is used to support said a pair of sputter gun; And power supply, being used for to said target power supply, said method comprises:
Said substrate is installed on the said substrate support;
Size Control according to said substrate is included in the number of the magnet in the said a pair of sputter gun and the spacing between said magnet;
To said target power supply; And
Because of said target and said a pair of sputter gun produce plasma in the center of said target,
Wherein, each in said a plurality of magnets comprises the upper and lower, and said upper and lower forms integral body, and the magnetic polarity of said upper and lower differs from one another, and magnet arrangement becomes a row.
27. method according to claim 26, wherein, said substrate is the substrate that is used for the large tracts of land organic light emitting diode device.
28. method according to claim 27, wherein, said substrate or said sputter gun are movably.
29. method according to claim 27, wherein, said a pair of sputter gun is towards each other.
30. method according to claim 29, wherein, said target is installed in respectively on the opposite face of said sputter gun.
31. method according to claim 30, wherein, each in the said magnet has " 1 " shape.
32. method according to claim 30, wherein, each in the said magnet has square.
33., wherein, control the quantity of said magnet according to layer deposition rate according to claim 31 or 32 described methods.
34. method according to claim 33, wherein, each in the said sputter gun comprises the module that is connected to corresponding sputter gun and uses.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/KR2007/006409 WO2009075393A1 (en) | 2007-12-10 | 2007-12-10 | Plasma damage free sputter gun, sputter, plasma process apparatus and film-forming method |
Publications (2)
| Publication Number | Publication Date |
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| CN101897002A CN101897002A (en) | 2010-11-24 |
| CN101897002B true CN101897002B (en) | 2012-04-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2007801018848A Expired - Fee Related CN101897002B (en) | 2007-12-10 | 2007-12-10 | Plasma damage free sputter gun, sputter, plasma process apparatus and film-forming method |
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| Country | Link |
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| CN (1) | CN101897002B (en) |
| WO (1) | WO2009075393A1 (en) |
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| WO2023018758A1 (en) * | 2021-08-10 | 2023-02-16 | Virginia Commonwealth University | Sputtering machines, substrate holders, and sputtering processes with magnetic biasing |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001032067A (en) * | 1999-07-22 | 2001-02-06 | Sanyo Shinku Kogyo Kk | Magnet for film formation, film forming method using it and device therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH04346662A (en) * | 1991-05-22 | 1992-12-02 | Ube Ind Ltd | Sputtering method and its apparatus |
| JPH11117066A (en) * | 1997-10-14 | 1999-04-27 | Matsushita Electric Ind Co Ltd | System and method for sputtering |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001032067A (en) * | 1999-07-22 | 2001-02-06 | Sanyo Shinku Kogyo Kk | Magnet for film formation, film forming method using it and device therefor |
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| Publication number | Publication date |
|---|---|
| WO2009075393A1 (en) | 2009-06-18 |
| CN101897002A (en) | 2010-11-24 |
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