CN101890579A - 器件加工方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 238000005452 bending Methods 0.000 claims abstract description 28
- 238000003754 machining Methods 0.000 claims abstract description 15
- 238000012545 processing Methods 0.000 description 45
- 235000012431 wafers Nutrition 0.000 description 45
- 238000005520 cutting process Methods 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 11
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- 239000002390 adhesive tape Substances 0.000 description 6
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- 238000001514 detection method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 3
- 229910009372 YVO4 Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 238000004364 calculation method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
本发明提供一种器件加工方法,其能够提高器件的抗弯强度。该器件加工方法用于提高通过分割半导体晶片而形成的器件的抗弯强度,该器件加工方法的特征在于,对器件的外周照射对于器件具有吸收性的波长的脉冲激光束来实施倒角加工,所述脉冲激光束的脉宽为2ns以下,且峰值能量密度为5GW/cm2~200GW/cm2。
Description
技术领域
本发明涉及对器件的外周照射脉冲激光束来实施倒角加工的器件加工方法。
背景技术
在半导体器件制造工艺中,使用呈格子状形成在大致圆板形状的硅晶片、砷化镓晶片等半导体晶片的表面上的、被称为间隔道(street)的分割预定线,划分出多个区域,在划分出的各区域内形成IC、LSI等的器件。然后,通过切削装置或激光加工装置将半导体晶片分割成各个器件,分割后的器件被广泛应用于移动电话、个人计算机等各种电气设备。
作为切削装置,一般使用被称为划片(dicing)装置的切削装置,在该切削装置中,在使切削刀片以大约30000rpm进行高速旋转的同时,使切削刀片切入半导体晶片,由此来进行切削,其中,上述切削刀片是利用金属、树脂将金刚石或CBN等的超磨粒固结在一起而形成的,其厚度为30~300μm左右。
另一方面,激光加工装置至少具有:卡盘工作台,其保持半导体晶片;激光束照射单元,其向由该卡盘工作台保持的半导体晶片照射脉冲激光束;以及加工进给单元,其使该卡盘工作台与该激光束照射单元相对地进行加工进给,该激光加工装置沿着形成在半导体晶片表面上的分割预定线,照射对于半导体晶片具有吸收性的波长的脉冲激光束而形成激光加工槽,然后施加外力,沿着激光加工槽来切断半导体晶片,从而分割成各个器件(例如参照日本特开2007-19252号公报)。
【专利文献1】日本特开2007-19252号公报
然而,利用具有切削刀片的划片装置切削半导体晶片而形成的器件的抗弯强度为800MPa,与之相对,使用现有的激光加工方法形成的器件的抗弯强度为400MPa这样的低水平,存在导致电气设备质量下降的问题。
发明内容
本发明正是鉴于上述情况而完成的,其目的在于提供一种能够提高抗弯强度的器件加工方法。
根据本发明,提供一种器件加工方法,该器件加工方法用于提高通过分割半导体晶片而形成的器件的抗弯强度,该器件加工方法的特征在于,对器件的外周照射对于器件具有吸收性的波长的脉冲激光束来实施倒角加工,所述脉冲激光束的脉宽为2ns以下,且峰值能量密度为5GW/cm2~200GW/cm2。
优选的是,以使会聚到器件外周的光点的直径的16/20以上发生重合的方式,对半导体晶片进行加工进给来实施倒角加工。优选的是,激光束的光点直径处于φ5μm~φ15μm的范围内。
根据本发明,将对于器件具有吸收性的波长的脉冲激光束的脉宽设定为2ns以下,并且,将脉冲激光束的每1个脉冲的峰值能量密度设定为5GW/cm2~200GW/cm2,从而对器件的外周实施倒角加工,因此,能够使器件的抗弯强度达到800MPa以上。
附图说明
图1是适合于实施本发明的激光加工装置的外观立体图。
图2是通过胶带而由环状框架支撑的半导体晶片的立体图。
图3是激光束照射单元的框图。
图4是激光加工工序的立体图。
图5(A)是激光加工工序的说明图,图5(B)是通过激光加工而分割成器件的半导体晶片的剖面图。
图6是划片工序的说明图。
图7是倒角加工工序的说明图。
图8是说明光束点的重合量的图。
标号说明
W:半导体晶片;T:胶带(划片带:dicing tape);F:环状框架;D:器件;2:激光加工装置;28:卡盘工作台;34:激光束照射单元;36:聚光器;74:分割槽。
具体实施方式
下面,参照附图来详细说明本发明的实施方式。图1示出了适合于实施本发明的器件加工方法的激光加工装置的概略结构图。
激光加工装置2包括以可在X轴方向上移动的方式搭载在静止基座4上的第1滑块6。第1滑块6可通过由滚珠丝杠8和脉冲电机10构成的加工进给单元12,沿着一对导轨14在加工进给方向、即X轴方向上移动。
在第1滑块6上,以可在Y轴方向上移动的方式搭载有第2滑块16。即,第2滑块16可通过由滚珠丝杠18和脉冲电机20构成的分度进给单元22,沿着一对导轨24在分度方向、即Y轴方向上移动。
在第2滑块16上,通过圆筒支撑部件26搭载有卡盘工作台28,卡盘工作台28可通过加工进给单元12和分度进给单元22在X轴方向和Y轴方向上移动。在卡盘工作台28上设有夹具30,该夹具30夹持由卡盘工作台28吸引保持的半导体晶片。
在静止基座4上直立地设有柱32,在该柱32上安装有收容激光束照射单元34的壳体35。如图3所示,激光束照射单元34包含:振荡产生YAG激光或YVO4激光的激光振荡器62、重复频率设定单元64、脉宽调节单元66、以及功率调节单元68。
由激光束照射单元34的功率调节单元68调节为预定功率的脉冲激光束被安装在壳体35的前端的聚光器36的反射镜70反射,然后经聚光用物镜72进行会聚,从而照射到保持在卡盘工作台28上的半导体晶片W上。
在壳体35的前端部,在X轴方向上与聚光器36并排地设置有摄像单元38,该摄像单元38检测要进行激光加工的加工区域。摄像单元38包含利用可见光来拍摄半导体晶片的加工区域的通常的CCD等摄像元件。
摄像单元38还包含:红外线照射单元,其向半导体晶片照射红外线;光学系统,其能够捕捉由红外线照射单元照射的红外线;以及红外线摄像单元,其由红外线CCD等红外线摄像元件构成,输出与该光学系统捕捉到的红外线对应的电信号,该摄像单元38拍摄的图像信号被发送到控制器(控制单元)40。
控制器40由计算机构成,并具有:中央处理装置(CPU)42,其根据控制程序进行运算处理;只读存储器(ROM)44,其存储控制程序等;可读写的随机存取存储器(RAM)46,其存储运算结果等;计数器48;输入接口50;以及输出接口52。
标号56表示加工进给量检测单元,其由沿着导轨14设置的线性标度尺54和设置在第1滑块6上的未图示的读取头构成,加工进给量检测单元56的检测信号被输入到控制器40的输入接口50。
标号60表示分度进给量检测单元,其由沿着导轨24设置的线性标度尺58和设置在第2滑块16上的未图示的读取头构成,分度进给量检测单元60的检测信号被输入到控制器40的输入接口50。
由摄像单元38拍摄的图像信号也被输入到控制器40的输入接口50。另一方面,从控制器40的输出接口52向脉冲电机10、脉冲电机20、激光束照射单元34等输出控制信号。
如图2所示,在作为激光加工装置2的加工对象的半导体晶片W的表面上,垂直地形成有第1间隔道S1和第2间隔道S2,在由第1间隔道S1和第2间隔道S2划分出的区域内形成有多个器件D。
晶片W被贴附在作为胶带的划片带T上,划片带T的外周部被贴附在环状框架F上。由此,晶片W处于通过划片带T而由环状框架F支撑的状态,利用图1所示的夹具30来夹持环状框架F,由此将其支撑固定在卡盘工作台28上。
下面参照图4和图5,说明使用图1所示的激光加工装置2来实施的半导体晶片的激光加工方法。在该激光加工方法中,如图4和图5(A)所示,对于半导体晶片W具有吸收性的波长的脉冲激光束37由聚光器36进行会聚而照射到半导体晶片W的表面上,同时,使卡盘工作台28在图5(A)中从间隔道S1的一端(图5(A)中为左端)朝箭头X1所示的方向以预定的加工进给速度进行移动。
然后,当间隔道S1的另一端(图5(A)中为右端)到达聚光器36的照射位置时,停止脉冲激光束的照射并停止卡盘工作台28的移动。如图5(B)所示,在半导体晶片W上,沿着间隔道S1形成了分割槽74。
当沿着全部第1间隔道S1形成了分割槽74时,使卡盘工作台28旋转90度。然后,沿着与第1间隔道S1垂直的全部第2间隔道S2形成相同的分割槽74。其结果,在半导体晶片W上,沿着全部间隔道S1、S2形成了分割槽74,从而分割成各个器件D。
另外,激光加工工序例如在以下加工条件下实施。
光源:YAG激光或YVO4激光
波长:355nm(产生上述光源的第3高次谐波)
平均输出:7W
重复频率:10kHz
脉宽:30ns
加工进给速度:200mm/s
在分割槽形成工序中,当分割槽74到达半导体晶片W的背面时,脉冲激光束照射到胶带T上,不过,由于胶带T由聚烯烃等的合成树脂带构成,因此,脉冲激光束不会透射过胶带T而使其熔断。
半导体晶片W的切削也可按照公知的方式,使用划片装置来实施。如图6所示,在划片装置的切削单元76的主轴外壳78中,以可旋转的方式收容有主轴80,在主轴80的前端部安装有切削刀片82。
在对所要切削的第1间隔道S1与切削刀片28进行了对准的状态下,使卡盘工作台在X轴方向上移动,并且,在使切削刀片82高速旋转的同时使切削单元76进行加工,由此来切削所对准的间隔道S1。
在Y轴方向上,按照存储在存储器内的间隔道间距步进地使切削单元76进行分度进给,同时进行切削,由此来对同一方向上的全部间隔道S1进行切削。并且,在使卡盘工作台旋转90度之后,通过进行与上述相同的切削,来对全部间隔道S2进行切削,从而将半导体晶片W分割成各个器件D。
如上所述,利用具有切削刀片的划片装置切削半导体晶片W而形成的器件的抗弯强度为800MPa。然而,使用参照图4和图5说明的激光加工方法而形成的器件的抗弯强度为400MPa的低水平,存在导致电气设备质量下降的问题。
在本发明中发现,通过在规定的条件下向器件的外周照射脉冲激光束,实施倒角加工,能够提高器件的抗弯强度。这种器件抗弯强度的提高还能应用于利用图6所示的划片装置分割的器件D。
在本发明的器件加工方法中,如图7所示,沿着器件D的外周,即,沿着分割槽74的边缘照射对于半导体晶片W具有吸收性的波长的脉冲激光束,对器件D实施倒角加工,由此实现了器件抗弯强度的提高。
在本发明的器件加工方法中,优选的是,通过将从聚光器36输出的脉冲激光束的重复频率、脉宽、光点直径D1以及加工进给速度设定为最佳,从而如图8所示,将邻接的脉冲激光束的光点在加工进给方向上的重合量OL调节到以下范围内。设光点直径为D1,则将重合量调节为16D1/20≤OL≤19D1/20。
在本发明的器件加工方法中,目的在于提高通过分割半导体晶片W而得到的器件D的抗弯强度,为了调查使通过激光加工方法制造的器件D的抗弯强度达到800MPa以上的加工条件,进行了以下实验。
针对波长为1064nm、532nm、355nm的各激光束,使脉宽变化为30ns、10ns、5ns、3ns、2ns、1ns、100ps、50ps、10ps,并在各个脉宽下改变输出,从而在实验中求出能够实施期望的激光加工的、每1个脉冲的能量,将该能量除以脉宽,并除以光点的面积来计算峰值能量密度,调查脉宽、峰值能量密度以及抗弯强度之间的关系。
这里,存在这样的关系:峰值能量密度(W/cm2)=平均输出(W)/(重复频率(Hz)×光点面积(cm2)×脉宽(s))。其结果,对于波长为1064nm、532nm、355nm的各激光束,得到了几乎相同的以下结果。
(实验1)按照重复频率:10kHz、平均输出:0.1W、脉宽:2ns、光点直径:φ10μm、进给速度:10mm/s、峰值能量密度:6.35GW/cm2的条件,在半导体晶片上形成激光加工槽,之后分割成各个器件,测定器件的抗弯强度,结果是800MPa。
(实验2)按照重复频率:100kHz、平均输出:0.1W、脉宽:10ps、光点直径:φ10μm、进给速度:100mm/s、峰值能量密度:63.66GW/cm2的条件,在半导体晶片上形成激光加工槽,之后分割成各个器件,测定器件的抗弯强度,结果是1800MPa。
(实验3)按照重复频率:100kHz、平均输出:0.3W、脉宽:10ps、光点直径:φ10μm、进给速度:100mm/s、峰值能量密度:190.9GW/cm2的条件,在半导体晶片上形成激光加工槽,之后分割成各个器件,测定器件的抗弯强度,结果是1000MPa。
(实验4)按照重复频率:100kHz、平均输出:0.4W、脉宽:10ps、光点直径:φ10μm、进给速度:100mm/s、峰值能量密度:254.6GW/cm2的条件,在半导体晶片上形成激光加工槽,之后分割成各个器件,测定器件的抗弯强度,结果是500MPa。
(实验5)按照重复频率:10kHz、平均输出:1.0W、脉宽:10ns、光点直径:φ10μm、进给速度:10mm/s、峰值能量密度:12.7GW/cm2的条件,在半导体晶片上形成激光加工槽,之后分割成各个器件,测定器件的抗弯强度,结果是400MPa。
(实验6)按照重复频率:10kHz、平均输出:1.0W、脉宽:5ns、光点直径:φ10μm、进给速度:10mm/s、峰值能量密度:25.4GW/cm2的条件,在半导体晶片上形成激光加工槽,之后分割成各个器件,测定器件的抗弯强度,结果是500MPa。
(实验7)按照重复频率:10kHz、平均输出:0.1W、脉宽:3ns、光点直径:φ10μm、进给速度:10mm/s、峰值能量密度:4.2GW/cm2的条件,在半导体晶片上形成激光加工槽,之后分割成各个器件,测定器件的抗弯强度,结果是550MPa。
(实验8)按照重复频率:10kHz、平均输出:0.2W、脉宽:3ns、光点直径:φ10μm、进给速度:10mm/s、峰值能量密度:8.2GW/cm2的条件,在半导体晶片上形成激光加工槽,之后分割成各个器件,测定器件的抗弯强度,结果是500MPa。
(实验9)按照重复频率:10kHz、平均输出:0.07W、脉宽:2ns、光点直径:φ10μm、进给速度:10mm/s、峰值能量密度:4.5GW/cm2的条件,在半导体晶片上形成激光加工槽,之后分割成各个器件,测定器件的抗弯强度,结果是550MPa。
根据以上实验结果可以得出以下结论:为了获得抗弯强度为800MPa以上的器件,需要在以下条件下实施倒角加工:照射的脉冲激光束的脉宽在2ns以下,而且,峰值能量密度在5GW/cm2~200GW/cm2的范围内。
本发明的器件加工方法特别适于提高通过照射激光束而从半导体晶片W上分割出的器件D的抗弯强度,不过,也可以使用本发明的方法,对通过划片装置从半导体晶片W上分割出的器件D的外周实施倒角加工。在该情况下,可使倒角加工前的器件的抗弯强度即800MPa得到进一步提高。
在本发明的器件加工方法中,如参照图8所说明的那样,优选的是,邻接的光点S在加工进给方向上的重合率处于16/20~19/20的范围内。并且,优选的是,半导体晶片W上的激光束的光点直径处于φ5μm~φ15μm的范围内。
Claims (3)
1.一种器件加工方法,该器件加工方法用于提高通过分割半导体晶片而形成的器件的抗弯强度,该器件加工方法的特征在于,
对器件的外周照射对于器件具有吸收性的波长的脉冲激光束来实施倒角加工,所述脉冲激光束的脉宽为2ns以下,且峰值能量密度为5GW/cm2~200GW/cm2。
2.根据权利要求1所述的器件加工方法,其中,
以使会聚到器件外周的光点的直径的16/20以上发生重合的方式,对半导体晶片进行加工进给来实施倒角加工。
3.根据权利要求2所述的器件加工方法,其中,
该光点的直径处于φ5μm~φ15μm的范围内。
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