CN101882588A - Method for reducing whisker defects on surface of aluminum lining pad - Google Patents
Method for reducing whisker defects on surface of aluminum lining pad Download PDFInfo
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- CN101882588A CN101882588A CN2009100834695A CN200910083469A CN101882588A CN 101882588 A CN101882588 A CN 101882588A CN 2009100834695 A CN2009100834695 A CN 2009100834695A CN 200910083469 A CN200910083469 A CN 200910083469A CN 101882588 A CN101882588 A CN 101882588A
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Abstract
The invention discloses a method for reducing whisker defects on the surface of an aluminum lining pad, which comprises more than two times of deposition of the aluminum lining pad. Due to the adoption of the method, and the aluminum lining pad deposited each time is relatively thin, the stress when finally forming the aluminum lining pad is relatively low, thereby effectively reducing the occurrence of whisker defects.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of method that reduces whisker defects on surface of aluminum lining pad.
Background technology
At present, progress along with the semiconductor technology processing procedure, the thickness of aluminium liner (Al pad) is gradually to the trend development of thickening, for example be developed to 65 nanometers even high-tech generation more from 90 nm technology generation, the thickness of aluminium liner increases to 14500 dusts from 10000 dusts, increase along with thickness, the stress of aluminium liner also increases thereupon, thereby cause after having deposited the aluminium liner, aggravation at whisker defects on surface of aluminum lining pad (whisker defect), this is because the thermal coefficient of expansion of metallic aluminium is bigger, the temperature of the used heater of deposition of aluminum liner (heater) is approximately about 270 degrees centigrade, deposited after the aluminium liner, it has been placed into the room temperature under so high temperature, will in the aluminium liner, produce very big stress, this stress is along with the increase of the thickness of aluminium liner, just obvious further, so the aluminium liner thickness is thick more, whisker defect is just all the more serious.
Obviously, the aluminium liner applications is in the last part technology of semiconductor device.In last part technology, can the multiple layer metal interconnection layer be set according to different needs on Semiconductor substrate, every layer of metal interconnecting layer comprises metal interconnecting wires and insulating barrier, this just need make groove and connecting hole to above-mentioned insulating barrier, plated metal in above-mentioned groove and connecting hole then, the metal of deposition is metal interconnecting wires, generally selects for use copper as metal interconnected wire material.Deposition of aluminum liner on the basis of said structure then, top layer copper interconnection layer and aluminium liner key and, for follow-up encapsulation procedure is prepared.Various device architectures be can form on the Semiconductor substrate, active area, isolated area on the substrate for example are defined in, and transistorized source/leakage and the grid in the active area.The manufacture method of said structure and concrete formation thereof are irrelevant with the present invention, so no longer disclose at this.
Finish the method flow of deposition of aluminum liner for a step in the prior art below.
Step 101, the wafer (wafer) that will carry out the aluminium liner deposition are inserted the deposition reaction chamber, and heater heats, and heating-up temperature remains on about 270 degrees centigrade.
Step 102, in the deposition reaction chamber, feed gas, the argon gas of adding (Ar) back of the body blow the flow system flow scope at 2 standard cubic centimeter per minutes (sccm) to 50sccm, be preferably 6sccm, to improve temperature homogeneity, make the wafer thermally equivalent.Enter Ar range of flow in the chamber from the top of reaction chamber at 20sccm to 300sccm, be preferably 65sccm.
After above-mentioned auxiliary process conditional stability, execution in step 103, carry out plasma deposition process, form Al pad.Generally when the aluminium liner of deposition 14500 dust thickness, sedimentation time is 90 seconds.
Summary of the invention
In view of this, the technical problem to be solved in the present invention is: when aluminium liner one step, deposition was finished, the problem of a large amount of whisker defects occurs in the aluminium pad surfaces.
For solving the problems of the technologies described above, technical scheme of the present invention specifically is achieved in that
The invention discloses a kind of method that reduces whisker defects on surface of aluminum lining pad, comprise the aluminium liner is divided into above deposition twice.
The described thickness that is divided into twice above deposition formation aluminium liner equals the thickness that a step forms the aluminium liner.
In the deposition reaction chamber during deposition of aluminum liner, feed the argon Ar back of the body and blow the flow system flow scope between 2 standard cubic centimeter per minute sccm to 50sccm, enter Ar range of flow in the chamber from the top of reaction chamber between the 20sccm to 300sccm, the temperature of reaction chamber inner heating device is between 260 to 280 degrees centigrade.
During described deposition of aluminum liner, feeding the Ar back of the body, to blow flow system flow be 6sccm, and the Ar flow that enters in the chamber from the top of reaction chamber is 65sccm, and the temperature of reaction chamber inner heating device is 270 degrees centigrade.
When described aluminium liner is divided into twice above deposition, is deposited in the different reaction chambers at every turn and carries out.
When described aluminium liner is divided into twice above deposition, be deposited on intermittently formation in the same reaction chamber at every turn.
When intermittence, in reaction chamber, feed refrigerating gas.
Described refrigerating gas is Ar, nitrogen N
2With helium H
e
The described intermittent time is between 10 seconds to 300 seconds.
The described intermittent time is 30 seconds.
As seen from the above technical solutions, in order to reduce the stress of aluminium liner, the present invention adopts the method at intermittence (idle break) that the aluminium liner is divided into depositing several times and finishes.Because the aluminium liner of each deposition is thinner,, will effectively reduce the generation of the phenomenon of whisker defect so the stress when finally forming the aluminium liner will be lower.
Description of drawings
Fig. 1 is the method flow schematic diagram of first preferred embodiment of deposition of aluminum liner of the present invention.
Fig. 2 is the method flow schematic diagram of second preferred embodiment of deposition of aluminum liner of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of one of ordinary skilled in the art is encompassed in protection scope of the present invention far and away.
In order to reduce the stress of aluminium liner, the present invention adopts the method for idle break that the aluminium liner is divided into depositing several times and finishes.Because the aluminium liner of each deposition is thinner,, will effectively reduce the generation of the phenomenon of whisker defect so the stress when finally forming the aluminium liner will be lower.
Fig. 1 shows the method flow schematic diagram of first preferred embodiment of deposition of aluminum liner of the present invention.
After above-mentioned auxiliary process conditional stability, execution in step 203, carry out plasma deposition process, form the first of Al pad, i.e. an Al pad, sedimentation time was controlled at 50 seconds.
In first preferred embodiment, be deposited in two reaction chambers and carry out, when wafer is from a reaction chamber to the another one reaction chamber like this, between time of a buffering is arranged, be integrated between the reaction chamber, guaranteed that the aluminium liner when a reaction chamber is transferred to another reaction chamber, still has very high vacuum degree.Generally when the aluminium liner of deposition 14500 dust thickness, sedimentation time is 90 seconds, so be divided into when carrying out for twice, guarantee that the thickness that deposits still is 14500 dusts, and the sedimentation time of the preferred embodiment of the present invention in two reaction chambers was respectively 50 seconds, 45 seconds.In addition, preferably, also the time that the aluminium liner deposits in first reaction chamber can be controlled at total sedimentation time 1/3rd to 2/3rds between get final product, time of depositing in second reaction chamber of aluminium liner just deducts the time that the aluminium liner deposits for total sedimentation time in first reaction chamber then.When being divided into twice deposition,, can not producing very big stress and get final product, so can each time that deposits of flexible allocation as long as guarantee that the thickness of each deposition of aluminum liner is not very thick.
If the deposit thickness of aluminium liner is not 14500 dusts, the time that is divided into twice deposition so also changes thereupon.Further, the deposition of aluminum liner can also be divided into repeatedly and carry out, at least but be not limited to 2 times, but be processing procedure for simplicity, only otherwise the distribution number of times of generation whisker defect all is feasible.
Fig. 2 shows the method flow schematic diagram of second preferred embodiment of deposition of aluminum liner of the present invention.
Step 301, the wafer that will carry out the aluminium liner deposition insert the deposition reaction chamber, and the heater in the deposition reaction chamber heats, and heating-up temperature remains on about 270 degrees centigrade.
Step 302, feed gas in the deposition reaction chamber, the Ar back of the body of adding blows the flow system flow scope at 2sccm to 50sccm, is preferably 6sccm, to improve temperature homogeneity, makes the wafer thermally equivalent.Enter Ar range of flow in the chamber from the top in deposition reaction chamber at 20sccm to 300sccm, be preferably 65sccm.
After above-mentioned auxiliary process conditional stability, execution in step 303, carry out plasma deposition process, form the first of Al pad, i.e. an Al pad, sedimentation time was controlled at 50 seconds.
Step 304, stop the deposition of aluminum liner, dwell time is controlled between 10 seconds to 300 seconds, is preferably 30 seconds.At this moment,, still keep the stable feeding of Ar, and the temperature of maintenance heater is about 270 degrees centigrade though stop plated metal Al.
Step 305, continuation deposition form the 2nd Al pad, and sedimentation time was controlled at 45 seconds.
In second preferred embodiment, be deposited on and be divided into twice in the same reaction chamber and carry out, middle cooling (cool down) step 304 that adds, this be because the temperature during plasma deposition much larger than the temperature of heater, so stop plasma deposition in the middle of needing only, just be equivalent to cavity temperature is lowered, the gradation of aluminium liner is carried out, make the stress of aluminium liner of each deposition all less, just can avoid occurring whiskerdefect.It should be noted that, in this cooling procedure, though stop plated metal Al, but do not stop the feeding of Ar, here Ar is as refrigerating gas, and the Ar back of the body blows the flow system flow scope at 2sccm to 50sccm, is preferably 6sccm, enter Ar range of flow in the chamber from the top of reaction chamber at 20sccm to 300sccm, be preferably 65sccm.Wherein, refrigerating gas comprises Ar, but is not limited to inert gases such as nitrogen, helium.Generally when the aluminium liner of deposition 14500 dust thickness, sedimentation time is 90 seconds, so be divided into when carrying out for twice, guarantee that the thickness that deposits still is 14500 dusts, and the sedimentation time of the preferred embodiment of the present invention in two reaction chambers was respectively 50 seconds, 45 seconds.In addition, preferably, also can with the aluminium liner time of deposition for the first time be controlled at total sedimentation time 1/3rd to 2/3rds between get final product, the aluminium liner is in that the time of deposition just deducts the aluminium liner in the time that deposits for the first time for total sedimentation time for the second time then.When being divided into twice deposition,, can not producing very big stress and get final product, so can each time that deposits of flexible allocation as long as guarantee that the thickness of each deposition of aluminum liner is not very thick.
If the deposit thickness of aluminium liner is not 14500 dusts, the time that is divided into twice deposition so also changes thereupon.Further, can also will add repeatedly cooling step in the deposition of aluminum liner process, but be processing procedure for simplicity, only otherwise the distribution number of times of generation whisker defect all is feasible.
The Al pad of Xing Chenging according to a particular embodiment of the invention, the image of catching by scanning electron microscopy (SEM) shows that the whisker defect on the Al pad obviously reduces.Further test proof adds idle break step in deposition process, can form interface layer (interface) on the Al surface of growth, but the resistance of interface is to the almost not influence of resistance of Al pad.
For the sake of simplicity above-mentioned, the temperature that claims heater specifically between 260 to 280 degrees centigrade, is preferably 270 degrees centigrade about 270 degrees centigrade.
Those skilled in the art is to be understood that; the idle break method that is adopted during deposition of aluminum liner of the present invention; be not limited to the specific embodiment among the present invention; as long as can gradation realize idle break; effectively reduce the execution mode of whisker defect, all within protection scope of the present invention.
Claims (10)
1. a method that reduces whisker defects on surface of aluminum lining pad comprises the aluminium liner is divided into above deposition twice.
2. the method for claim 1 is characterized in that, the described thickness that is divided into twice above deposition formation aluminium liner equals the thickness that a step forms the aluminium liner.
3. method as claimed in claim 2, it is characterized in that, in the deposition reaction chamber during deposition of aluminum liner, feed the argon Ar back of the body and blow the flow system flow scope between 2 standard cubic centimeter per minute sccm to 50sccm, enter Ar range of flow in the chamber from the top of reaction chamber between the 20sccm to 300sccm, the temperature of reaction chamber inner heating device is between 260 to 280 degrees centigrade.
4. method as claimed in claim 3 is characterized in that, during described deposition of aluminum liner, feeding the Ar back of the body, to blow flow system flow be 6sccm, and the Ar flow that enters in the chamber from the top of reaction chamber is 65sccm, and the temperature of reaction chamber inner heating device is 270 degrees centigrade.
5. as each described method of claim 1 to 4, it is characterized in that, when described aluminium liner is divided into twice above deposition, is deposited in the different reaction chambers at every turn and carries out.
6. as each described method of claim 1 to 4, it is characterized in that, when described aluminium liner is divided into twice above deposition, be deposited on intermittently formation in the same reaction chamber at every turn.
7. method as claimed in claim 6 is characterized in that, feeds refrigerating gas when intermittence in reaction chamber.
8. method as claimed in claim 7 is characterized in that, described refrigerating gas is Ar, nitrogen N
2With helium H
e
9. method as claimed in claim 6 is characterized in that the described intermittent time is between 10 seconds to 300 seconds.
10. method as claimed in claim 6 is characterized in that, the described intermittent time is 30 seconds.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100834695A CN101882588A (en) | 2009-05-06 | 2009-05-06 | Method for reducing whisker defects on surface of aluminum lining pad |
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| CN2009100834695A CN101882588A (en) | 2009-05-06 | 2009-05-06 | Method for reducing whisker defects on surface of aluminum lining pad |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586737A (en) * | 2012-03-09 | 2012-07-18 | 上海先进半导体制造股份有限公司 | Physical vapor deposition method of aluminum-copper film |
| CN102709180A (en) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | Preparation process of aluminium thin film |
| CN103165483A (en) * | 2013-02-20 | 2013-06-19 | 上海华力微电子有限公司 | Method for reducing defects on aluminum gasket surface |
| CN103280411A (en) * | 2013-05-23 | 2013-09-04 | 上海华力微电子有限公司 | Aluminum gasket forming method |
| CN104928644A (en) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Technological parameter optimization method of PVD system |
| CN106531637A (en) * | 2016-12-05 | 2017-03-22 | 武汉新芯集成电路制造有限公司 | Method for improving defects of aluminum film |
| CN109065462A (en) * | 2018-06-22 | 2018-12-21 | 上海华力微电子有限公司 | A kind of manufacturing method of aluminium liner |
| US10438813B2 (en) | 2017-11-13 | 2019-10-08 | Alpha And Omega Semiconductor (Cayman) Ltd. | Semiconductor device having one or more titanium interlayers and method of making the same |
| CN111816551A (en) * | 2020-09-09 | 2020-10-23 | 南京晶驱集成电路有限公司 | Manufacturing method and manufacturing system of semiconductor layer |
-
2009
- 2009-05-06 CN CN2009100834695A patent/CN101882588A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586737A (en) * | 2012-03-09 | 2012-07-18 | 上海先进半导体制造股份有限公司 | Physical vapor deposition method of aluminum-copper film |
| CN102709180A (en) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | Preparation process of aluminium thin film |
| CN103165483A (en) * | 2013-02-20 | 2013-06-19 | 上海华力微电子有限公司 | Method for reducing defects on aluminum gasket surface |
| CN103165483B (en) * | 2013-02-20 | 2015-08-19 | 上海华力微电子有限公司 | A kind of method reducing aluminium pad surfaces defect |
| CN103280411A (en) * | 2013-05-23 | 2013-09-04 | 上海华力微电子有限公司 | Aluminum gasket forming method |
| CN104928644A (en) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Technological parameter optimization method of PVD system |
| CN104928644B (en) * | 2014-03-18 | 2018-03-30 | 中芯国际集成电路制造(上海)有限公司 | A kind of optimization method of PVD system technological parameter |
| CN106531637A (en) * | 2016-12-05 | 2017-03-22 | 武汉新芯集成电路制造有限公司 | Method for improving defects of aluminum film |
| US10438813B2 (en) | 2017-11-13 | 2019-10-08 | Alpha And Omega Semiconductor (Cayman) Ltd. | Semiconductor device having one or more titanium interlayers and method of making the same |
| CN109065462A (en) * | 2018-06-22 | 2018-12-21 | 上海华力微电子有限公司 | A kind of manufacturing method of aluminium liner |
| CN111816551A (en) * | 2020-09-09 | 2020-10-23 | 南京晶驱集成电路有限公司 | Manufacturing method and manufacturing system of semiconductor layer |
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Application publication date: 20101110 |