CN104928644A - Technological parameter optimization method of PVD system - Google Patents
Technological parameter optimization method of PVD system Download PDFInfo
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- CN104928644A CN104928644A CN201410101122.XA CN201410101122A CN104928644A CN 104928644 A CN104928644 A CN 104928644A CN 201410101122 A CN201410101122 A CN 201410101122A CN 104928644 A CN104928644 A CN 104928644A
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Abstract
The invention provides a technological parameter optimization method of a PVD (Physical Vapor Deposition) system. The method comprises the following steps: total deposition time required for pre-depositing a thin film is obtained according to thickness of the pre-deposited thin film; the total deposition time is divided into several sections, and each section of deposition is followed by a cooling step so as to form several deposition/cooling cycles; and according to the rising trend of deposition temperature during the thin film deposition process, shorter cooling time is set during the slow rising process of deposition temperature, and longer cooling time is set during the fast rising process of deposition temperature. On the basis of the technological parameter optimization method of the PVD, cooling effect is improved, the grain growth problem of the deposited film that is caused by high temperature is controlled, WTW thickness control is improved, and product performance and nondefective rate are then enhanced.
Description
Technical field
The present invention relates to semiconductor fabrication process, particularly relate to a kind of optimization method of PVD system process parameters.
Background technology
Physical vapor deposition (Physical Vapor Deposition, PVD) system is widely used in the manufacture craft of current semiconductor product.Existing a kind of special rotary PVD system, can realize high yield and multilayer film deposit in same PVD chamber.
But we find, in this rotary PVD system, when the metallic film of deposition of thick, owing to being subject to the restriction of the cooling system of equipment own and volume, cause same batch wafers surface temperature different, causing the change of grain-size and property of thin film, cause WTW(wafer to wafer between different chips) thickness range becomes large, and good WTW gauge control manufactures the key based on the high performance logic chip of HKMG technology.For depositing Al 30K, six wafer form one batch, and WTW variation in thickness is very large, is about 4000 dusts.If in technological process, the speed of rotation arranging deposition table is 20rpm, then the consistence between wafer is better than the PVD of conventional rotating speed.In fact, it is very large that metal grain size difference can cause RS/Thickness value to fluctuate, so affect back segment make in wet-etch rate.As shown in Figure 1, the high grain-size of metal refining that can cause of chip temperature becomes large, and crystal boundary reduces, and crystal boundary reduces the resistance that can reduce metal accordingly, and also namely resistance is less means that thickness is larger.Based on this rotary PVD system, the metal thickness large root that fluctuates is caused be cooling performance for different positions deposition table in the intrinsic design of system to be different, this causes the difference of wafer surface temperature, and the higher grain-size of temperature is larger, and the one-tenth-value thickness 1/10 measured is also larger.Fig. 2 A shows the SEM figure performing the larger film of the thickness prepared of existing six circulation technologies, and as seen from the figure, grain-size is large, and crystal boundary is few.Fig. 2 B shows the SEM figure performing the normal film of thickness prepared by existing six circulation technologies, and as seen from the figure, grain-size is little, and crystal boundary is many.
How to solve problem in uneven thickness between wafer, usually by two kinds of solutions: one, redesign cooling system and strengthen cooling performance, this scheme fundamentally can solve Problems existing, but cost is too high for a long time consuming time.Two, modification process parameter, increases and more circulates, and reduces the depositing time of each circulation, and the first more easily realizes this method relatively, but increases the circulating cooling time, total process time can be caused to increase, reduce turnout.As shown in Figure 3 A and Figure 3 B, Fig. 3 A is the processing parameter of 6 circulations, and Fig. 3 B is the processing parameter of 18 circulations, contrasts two groups of data and finds, 6 depositions and the total 2676s consuming time of refrigeration cycle, and flow number (WPH) per hour is 8.07pcs/hr; And when circulation increases to 18 times, deposition and the refrigeration cycle always 4116s that reaches consuming time, WPH are reduced to 5.24pcs/hr, WTW variation in thickness is reduced to from 4000 dusts and is less than 1000 dusts.Although improve WTW thickness distribution, but reduce output.
As shown in Figure 4, when the processing parameter of execution 6 times circulation, in process operation process, temperature has been increased beyond 180 DEG C, and along with the growth of time, the speed that temperature rises is also large in change.
Therefore, be badly in need of a kind of new technique optimization method, to overcome deficiency of the prior art.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in embodiment part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
In order to solve problems of the prior art, the present invention proposes a kind of optimization method of PVD system process parameters, comprising the following steps:
According to the thickness of pre-deposition film, obtain the total depositing time described in pre-deposition needed for film; Described total depositing time is divided into some steps, often has cooling step after step deposition, constitute several deposition/refrigeration cycle; According to the ascendant trend of the depositing temperature in described film deposition process, in described depositing temperature rises slow step, set shorter cooling time, rising at described depositing temperature sets longer cooling time in step faster.
Further, can be used for the film of any PVD method deposition.
Further, described film is metallic aluminium, and pre-determined thickness is 25000 ~ 35000 dusts.
Further, total depositing time of the described aluminium film of deposition is divided into 24 steps, corresponding 24 deposition/refrigeration cycle.
Further, described 24 deposition refrigeration cycle are divided into three parts.
Further, the dividing mode of described three parts is: first part is 1-8 circulation, and second section is 9-16 circulation, and Part III is 17-24 circulation.
Further, it is 10-20s that described first part often walks the circulating cooling time, and it is 25-35s that described second section often walks the circulating cooling time, and it is 40-50s that described Part III often walks the circulating cooling time, and often walking depositing time is 73-80s.
To sum up, according to the optimization method of PVD system process parameters of the present invention, improve cooling performance, control the grain growth problem that deposit film causes because temperature is high, improve WTW gauge control, and then enhance product performance and good article rate.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.
In accompanying drawing:
Fig. 1 its for perform existing six circulation technology parameters time, deposited film thickness and location diagram;
Fig. 2 A corresponds in Fig. 1 the SEM figure of the film being labeled as 1;
Fig. 2 B corresponds in Fig. 1 the SEM figure of the film being labeled as 2;
Fig. 3 A is the processing parameter list figure of execution 6 circulations;
Fig. 3 B is the processing parameter list figure of execution 18 circulations;
When Fig. 4 is for performing existing six circulation technology parameters, the graph of a relation of temperature and depositing time;
Fig. 5 is the processing parameter list figure of exemplary embodiment of the present;
Fig. 6 is with the comparison diagram of the curve of depositing time change curve and existing six circulation technologies according to temperature in the method film deposition process performing exemplary embodiment of the present;
The comparison diagram that Fig. 7 is the curve of film thickness prepared by method and position relationship curve and existing six circulation technologies according to an exemplary embodiment of the present invention.
Embodiment
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, by following description, detailed step is proposed, to explain the optimization method of a kind of PVD system process parameters that the present invention proposes.Obviously, the specific details that the technician that execution of the present invention is not limited to semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other embodiments.
Should be understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not get rid of existence or additional other features one or more, entirety, step, operation, element, assembly and/or their combination.
[exemplary embodiment]
To be described in more detail the present invention below, and should be appreciated that those skilled in the art can modify the present invention described here, and still realize advantageous effects of the present invention.
According to the thickness of pre-deposition film, obtain the total depositing time described in pre-deposition needed for film, the total depositing time of different thickness film is different.Cooling time, setting procedure was as follows: first total depositing time is divided into some steps, often had a cooling step after step deposition, therefore constituted several deposition/refrigeration cycle.According to the ascendant trend of the depositing temperature in described film deposition process, in depositing temperature rises slow step, set shorter cooling time, rising in temperature sets longer cooling time in step faster.The ascendant trend of depositing temperature can judge according to the temperature test on deposit film surface in technological process.Described some steps can be 6 ~ 36 steps, such as 6 steps, 18 steps, 24 steps, 36 steps etc., but are not limited thereto.It is worth mentioning that, total thickness due to predeposition film determines the total heat produced in deposition process, cooling step number required for determining according to the ability of cooling step, the thickness of pre-deposition film is thicker, its in requisition for cooling time and cooling step number also can increase accordingly, when the thickness of pre-deposition film is less, its in requisition for cooling time and cooling step number can reduce accordingly.In the process of cooling step number setting, the collocation optimizing deposition/cooling time be noted, reduce unnecessary cooling time, to improve the overall throughput of equipment.Method of the present invention goes for the preparation process of any PVD method deposit film.
As an embodiment, deposition pre-determined thickness is the aluminium film of 25000 ~ 35000 dusts.Described total depositing time is divided into some steps, described some steps can be 6 ~ 36 steps, such as 6 steps, 18 steps, 24 steps, 36 steps etc., but be not limited thereto, for the film that Thickness Ratio is short compared with the total depositing time of Bao, its point step number can suitably reduce, for the film that the thicker total depositing time of Thickness Ratio is long, then its point step number can correspondingly increase, specifically set according to the thickness of actual deposition film and required total depositing time.As an example, be divided into 24 steps, often walking deposition time ranges is 73-80s.
Further, known deposition pre-determined thickness is total depositing time of the aluminium film of 30000 dusts is 1836s, 1836s is divided into 24 steps, often step is 76s, often there is cooling step after step deposition, therefore constitute 24 deposition/refrigeration cycle, then 24 circulations are divided into three parts, in depositing temperature rises slow step, set shorter cooling time, rising in temperature sets longer cooling time in step faster.The ascendant trend of depositing temperature can judge according to the temperature test on deposit film surface in technological process.According to temperature rising curve figure as shown in Figure 4, setting first part be 1-8 circulation often walk cooling time be 10-20s, be chosen as 15s, second section be 9-16 circulation often walk cooling time be 25-35s, be chosen as 30s, Part III be 17-24 circulation often walk cooling time be 40-50s, be chosen as 45s.The setting of embodiment design parameter as shown in Figure 5.It is worth mentioning that, in order to save the process time as much as possible, when cooling time sets, reducing unnecessary cooling time, to improve the overall throughput of equipment.
For the aluminium film that deposit thickness is 30000 dusts, according to the optimization method setting cooling time of processing parameter of the present invention, total processing time does not increase.Be illustrated in figure 6 and adopt processing parameter of the present invention to implement in deposition process, the comparison diagram of temperature rising curve and six circulation times.As seen from Figure 6, by process parameter optimizing, in film deposition process temperature rise obviously slow down, top temperature lower than 120 DEG C, with temperature during execution six circulation technology rise be greater than 180 DEG C compared with improve significantly.As shown in Figure 7, in figure, separation line left-most curve is the curve adopting existing six circulation technology parameters to prepare gained film thickness, thick consistency is poor as seen from Figure 7, fluctuate very large, and in Fig. 7 on the right of separation line curve be that processing parameter prepares the curve of gained film thickness according to an exemplary embodiment of the present, thickness distribution is even as seen from the figure, and close with preset value, consistence is very good.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (7)
1. an optimization method for PVD system process parameters, comprising:
According to the thickness of pre-deposition film, obtain the total depositing time described in pre-deposition needed for film;
Described total depositing time is divided into some steps, often has cooling step after step deposition, constitute several deposition/refrigeration cycle;
According to the ascendant trend of the depositing temperature in described film deposition process, in described depositing temperature rises slow step, set shorter cooling time, rising at described depositing temperature sets longer cooling time in step faster.
2. the method for claim 1, is characterized in that, can be used for the film of any PVD method deposition.
3. the method for claim 1, is characterized in that, described film is metallic aluminium, and pre-determined thickness is 25000 ~ 35000 dusts.
4. method as claimed in claim 3, is characterized in that, total depositing time of the described aluminium film of deposition is divided into 24 steps, corresponding 24 deposition/refrigeration cycle.
5. method as claimed in claim 4, is characterized in that, described 24 deposition refrigeration cycle are divided into three parts.
6. method as claimed in claim 5, it is characterized in that, the dividing mode of described three parts is: first part is 1-8 circulation, and second section is 9-16 circulation, and Part III is 17-24 circulation.
7. method as claimed in claim 6, it is characterized in that, it is 10-20s that described first part often walks the circulating cooling time, and it is 25-35s that described second section often walks the circulating cooling time, it is 40-50s that described Part III often walks the circulating cooling time, and often walking depositing time is 73-80s.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736307A (en) * | 2008-11-24 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | Plasma vapor deposition method |
| CN101752292A (en) * | 2008-12-19 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow groove insolation structure |
| CN101882588A (en) * | 2009-05-06 | 2010-11-10 | 中芯国际集成电路制造(北京)有限公司 | Method for reducing whisker defects on surface of aluminum lining pad |
| CN102479739A (en) * | 2010-11-24 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Trench filling method for shallow trench isolation structure |
| CN102931059A (en) * | 2011-08-11 | 2013-02-13 | 无锡华润上华科技有限公司 | Back gold sputtering method |
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2014
- 2014-03-18 CN CN201410101122.XA patent/CN104928644B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736307A (en) * | 2008-11-24 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | Plasma vapor deposition method |
| CN101752292A (en) * | 2008-12-19 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow groove insolation structure |
| CN101882588A (en) * | 2009-05-06 | 2010-11-10 | 中芯国际集成电路制造(北京)有限公司 | Method for reducing whisker defects on surface of aluminum lining pad |
| CN102479739A (en) * | 2010-11-24 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Trench filling method for shallow trench isolation structure |
| CN102931059A (en) * | 2011-08-11 | 2013-02-13 | 无锡华润上华科技有限公司 | Back gold sputtering method |
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