CN102479739A - Trench filling method for shallow trench isolation structure - Google Patents
Trench filling method for shallow trench isolation structure Download PDFInfo
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- CN102479739A CN102479739A CN2010105576796A CN201010557679A CN102479739A CN 102479739 A CN102479739 A CN 102479739A CN 2010105576796 A CN2010105576796 A CN 2010105576796A CN 201010557679 A CN201010557679 A CN 201010557679A CN 102479739 A CN102479739 A CN 102479739A
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Abstract
The invention discloses a trench filling method for a shallow trench isolation structure. When a plurality of groups of experiment conditions are established, each group of the established experiment conditions adopts a process parameter group A0 before optimization, the difference of the experiment conditions only includes whether to cool a control wafer or not after depositing oxide with a thickness d, or includes the times of cooling during deposition of the oxide with the thickness d, and finally one group of experiment conditions is selected according to prospective stress standards to serve as process conditions after optimization, so that a trench can be filled. By the aid of the trench filling method, on one hand, filler in the trench is prevented from having cavities, and on the other hand, the filler in the trench meets the prospective stress standards.
Description
Technical field
The present invention relates to semiconductor technology, the channel filling method in particularly a kind of fleet plough groove isolation structure.
Background technology
Fig. 1～Fig. 3 is that shallow trench isolation is from the process generalized section of (STI) structure formation method in the prior art, and this method mainly may further comprise the steps:
Step 101 referring to Fig. 1, adopts etching technics to form groove 1002 on Semiconductor substrate 1001.
Step 102 referring to Fig. 2, adopts high-density plasma (HDP) chemical vapor deposition (CVD) technology to form oxide (oxide) 1003, for example silicon dioxide (SiO
2), formed oxide 1003 is filled in the groove 1002, and covers Semiconductor substrate 1001 surfaces.
Step 103 referring to Fig. 3, adopts cmp (CMP) technology to realize the planarization on Semiconductor substrate 1001 surfaces.
So far, this flow process finishes.
In actual applications, the formation method of sti structure possibly also comprise other steps, because other steps and the present invention are irrelevant, so introduce in detail no longer one by one.
Trench fill in the said method adopts HDP CVD technology, carries out brief account in the face of HDPCVD device of the prior art down.Fig. 4 is the sectional structure chart of HDP CVD device in the prior art; As shown in Figure 4; Through applying source power on the inductance coil 4002 of source power generator 4001 in process chamber 4005; Thereby around inductance coil 4002, generate an electromagnetic field, after gas inputed to process chamber 4005 from the air inlet 4003 of process chamber 4005, ionization took place and forms highdensity plasma in gas under the effect of electromagnetic field.Simultaneously; Wafer W is positioned on the electrostatic chuck 4006, on wafer W, applies high frequency power through high frequency power (HF power) generator 4007, so just makes to have a bigger voltage difference between wafer W and the plasma; Thereby make the plasma that moves to wafer W have directivity; In general, voltage difference is big more, and then the movement velocity of plasma is fast more.
Also can find out by above-mentioned introduction HDP CVD device; When carrying out trench fill; Several main technological parameters comprise at least: gas flow, source power size, high frequency power are big or small; Describe for ease, represent above-mentioned three parameters with alphabetical a, b, c respectively, also only represent all parameters of trench fill in the prior art with these three parameters.
Need to prove that HDP CVD device of the prior art possibly also comprise other parts, because other parts and the present invention are irrelevant, so introduce in detail no longer one by one.
Development along with semiconductor fabrication; On the basis of satisfying trench fill ability (gap fill capacity); Said trench fill ability is meant that mainly the oxide that is filled in the groove does not have the cavity, also need further to adjust the stress that trenched side-wall produced to the oxide of being filled in the groove, this be because; In actual production; We always expect to apply tensile stress to the raceway groove of N type metal oxide semiconductor (NMOS) pipe, and to increase mobility of charge carrier rate in the NMOS pipe trench road, expectation applies compression to the raceway groove of P-type mos (PMOS) pipe; Increase mobility of charge carrier rate in the PMOS pipe trench road, to reach the purpose that improves the speed of response and reduce power consumption.Therefore; For the NMOS pipe, if the oxide of filling in the groove is compression (indirect stress to raceway groove also is compression) to the stress that trenched side-wall produced, then we will be adjusted into tensile stress to the stress that trenched side-wall produced with oxide as much as possible; Perhaps; Even the oxide of filling in the groove is a tensile stress to the stress that trenched side-wall produced, but numerical values recited is not that we are desired, need adjust the size of oxide to the tensile stress that trenched side-wall produced yet; In like manner, also be like this for the PMOS pipe.
Based on above-mentioned thought, in the face of specifically introducing based on the channel filling method of stress adjustment in the prior art, this method comprises down:
Step 1 provides a product wafer, and wherein, the product wafer is the Semiconductor substrate that comprises groove, and promptly the product wafer is a structure as shown in Figure 1.
Step 2, employing HDP CVD technology fill oxide in the groove of product wafer; If satisfying the trench fill ability, the oxide after filling promptly do not have the cavity; Then with each item technological parameter of this HDP CVD as the technological parameter group after confirming; For example, as the technological parameter group A1 after confirming, execution in step three then with gas flow a1, source power size b1, high frequency power size c1; Otherwise, remove the oxide of filling in the groove, execution in step two again after or several in the technological parameter of adjustment HDP CVD for example, is adjusted into behind a1, b2, the c1 execution in step two again with a1, b1, c1.
Need to prove; Because the stress studies of trench fill is just to propose gradually in recent years, its objective is at the product wafer and satisfies on the basis of trench fill ability, further adjusts the stress of the filler of STI in the product wafer; But; To the product wafer of each actual production, the application technology parameter group is ripe technological parameter group in the actual production at present, that is to say; Can be directly with the technological parameter group of product wafer as the technological parameter group A1 after confirming, obtain A1 and omit execution in step one and two.
Step 3 provides a control sheet, and wherein, the control sheet is also claimed mating plate, and light face surface does not have semiconductor structure, is the test wafers that only has Semiconductor substrate.
Step 4 according to the technological parameter group A1 (a1, b1, c1) after confirming, adopts HDP CVD technology at control sheet surface deposition oxide, the stress S1 that the oxide that detection is deposited is produced control sheet surface;
Only adjust the high frequency power size then; Keep two other parameter constant, adopt HDP CVD technology at control sheet surface deposition oxide, the stress that the oxide that detection is deposited is produced control sheet surface; Through adjusting size, deposition oxide, the detection stress of high frequency power repeatedly; Can obtain multi-group data, every group of data comprise adjusted technological parameter group and pairing stress, for example; The stress that detects when the technological parameter group is A2 (a1, b1, c2) is that stress that S2, technological parameter group detect when being A3 (a1, b1, c3) is that the stress that S3...... technological parameter group detects when being Ap (a1, b1, cp) is Sp; Wherein, the value data size of p in the light of actual conditions or experience and confirming, concrete data are as shown in table 1 below:
Table 1
Step 5; According to the stress criterion of expection, select corresponding technological parameter group as the technological parameter group after optimizing, for example; If the numerical value of preset stress criterion is S3; Then select the pairing A3 of S3 (a1, b1, c3) as the technological parameter group after optimizing, like this, just can the technological parameter group A3 after optimizing be used for actual product.
Wherein, if the on all four stress of stress criterion that in table 1, does not have and expect, the pairing technological parameter group of the immediate stress of stress criterion of selection and expection gets final product.
So far, this flow process finishes.
Yet; The technological parameter group after the optimization has defective at said method: though can satisfy the stress criterion of expection; But not necessarily can satisfy the trench fill ability of actual product; This is because parameters such as gas flow a, source power size b, high frequency power size c are the major parameter that influences the trench fill ability; And realize the adjustment of stress in the prior art through the c of adjustment in the major parameter, and after being applied in the product, the technological parameter group after might optimizing do not satisfy the trench fill ability, and promptly the cavity possibly appear in the filler in the groove (oxide).
Summary of the invention
In view of this, the present invention provides the channel filling method in a kind of fleet plough groove isolation structure, can avoid the filler in the groove cavity to occur on the one hand, makes that on the other hand the filler in the groove satisfies the stress criterion of expecting.
For achieving the above object, technical scheme of the present invention is achieved in that
Channel filling method in a kind of fleet plough groove isolation structure, this method comprises:
A, obtain technological parameter group A0 before the optimization of product wafer, wherein, technological parameter group A0 comprises a plurality of technological parameters before the said optimization;
B, the many groups of foundation experiment conditions; Wherein, The said common experiment condition of organizing experiment conditions is more: adopt high-density plasma HDP chemical vapour deposition (CVD) CVD technology and controlling sheet surface deposition oxide according to technological parameter group A0 before optimizing; The difference experiment condition of said many group experiment conditions is: whether the control sheet cooled off behind the deposition oxide, or the number of times that cools off in the process of deposition oxide;
C, provide one the control sheet; From many groups experiment condition, select one group of experiment condition deposition oxide on said control sheet successively; After implementing to finish, one group of experiment condition detects and writes down the stress of said oxide to control sheet surface; Remove said oxide again behind every detection and the once said stress of record, and then select next group experiment condition deposition oxide on said control sheet;
D, set up said many group experiment conditions and each record said oxide to the one-to-one relationship between the surperficial stress of control sheet;
E, according to the stress criterion of expection, select pairing one group of experiment condition as the process conditions after optimizing according to said corresponding relation, according to the process conditions fill oxide in the groove of product wafer after optimizing.
Many groups experiment condition of said foundation comprises:
The 1st group of experiment condition: in process chamber, adopt HDP CVD technology and controlling sheet surface deposition one deck oxide according to technological parameter group A0, the thickness of said oxide is d;
The 2nd group of experiment condition: in process chamber, adopt HDP CVD technology and controlling sheet surface deposition one deck oxide according to technological parameter group A0, the thickness of said oxide is d, feeds refrigerating gas to process chamber then the control sheet is cooled off;
The 3rd group of experiment condition: in process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/n; Feeding refrigerating gas to process chamber cools off the control sheet; Repeat above-mentioned steps when the thickness of post-depositional oxide is d, feed refrigerating gas to process chamber the control sheet is cooled off the back end, wherein; N is the first preset experimental variable, and n is the positive integer more than or equal to 2.
Many groups experiment condition of said foundation further comprises:
The 4th group of experiment condition: in process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/m; To control sheet and be placed to and to control sheet again behind the outer natural cooling of process chamber and be placed in the process chamber, repeat above-mentioned steps, when the thickness of post-depositional oxide is d; To control and finish after sheet is placed to the outer natural cooling of process chamber; Wherein, m is the second preset experimental variable, and m is the positive integer more than or equal to 2.
Many groups experiment condition of said foundation further comprises:
The 5th group of experiment condition: the value that increases or reduce n; With increase or reduce after the value of n as the value of the n after upgrading; In process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/n; Feed gas to process chamber the control sheet is cooled off, repeat above-mentioned steps when the thickness of post-depositional oxide is d, feed to process chamber and finish after gas cools off the control sheet;
The 6th group of experiment condition: the value that increases or reduce m; With increase or reduce after the value of m as the value of the m after upgrading; In process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/m, will control sheet and be placed to process chamber and will control sheet again behind the natural cooling outward and be placed in the process chamber, repeat above-mentioned steps; When the thickness of post-depositional oxide is d, will controls and finish after sheet is placed to the outer natural cooling of process chamber.
The refrigerating gas that feeds in said the 2nd group of experiment condition, the 3rd group of experiment condition and the 5th group of experiment condition is argon Ar, oxygen O
2Or helium He.
The flow of the refrigerating gas of said feeding is 10 to 10000 mark condition milliliter per minutes;
The time of said cooling is 10 to 500 seconds.
The time of natural cooling is 10 to 500 seconds in said the 4th group of experiment condition and the 6th group of experiment condition.
Select one group of experiment condition to comprise described in the step e as the method for the process conditions after optimizing:
If there is the stress that equates with the stress criterion of expection in the stress that is write down, then based on said one-to-one relationship, the pairing experiment condition of selecting to equate with the stress criterion of expection of stress is as the process conditions after optimizing;
If there is not the stress that equates with the stress criterion of expection in the stress that is write down, then according to said one-to-one relationship, the pairing experiment condition of the immediate stress of stress criterion of selection and expection is as the process conditions after optimizing.
Said oxide is silicon dioxide SiO
2
In the channel filling method in a kind of fleet plough groove isolation structure provided by the present invention; When the many groups of foundation experiment condition; Each group in many groups experiment condition of setting up has all adopted the technological parameter group A0 before optimizing; The differences of many group experiment conditions only are: whether deposit thickness is the control sheet to be cooled behind the oxide of d or deposit thickness is the number of times that cools in the process of oxide of d; Because the technological parameter group A0 before optimizing is the maturation process parameter group in the actual production, so A0 can guarantee to satisfy the trench fill ability, and the distinctive points of organizing experiment condition is not to be the major parameter that influences the trench fill ability more; Therefore; If select one group of experiment condition as the process conditions after optimizing according to the expection stress criterion, can avoid the filler in the groove cavity to occur on the one hand, make the filler in the groove satisfy the stress criterion of expection on the other hand.
Description of drawings
Fig. 1～Fig. 3 is the process generalized section that shallow trench isolation leaves (STI) structure formation method in the prior art.
Fig. 4 is the sectional structure chart of HDP CVD device in the prior art.
Fig. 5 is the flow chart of the channel filling method in a kind of fleet plough groove isolation structure provided by the present invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, scheme according to the invention is done to specify further.
Core concept of the present invention is: when the many groups of foundation experiment condition; Each group in many groups experiment condition of setting up has all adopted the technological parameter group A0 before optimizing; The differences of many group experiment conditions only are: whether deposit thickness is the control sheet to be cooled behind the oxide of d or deposit thickness is the number of times that cools in the process of oxide of d; Because the technological parameter group A0 before optimizing is the maturation process parameter group in the actual production, so A0 can guarantee to satisfy the trench fill ability, and the distinctive points of organizing experiment condition is not to be the major parameter that influences the trench fill ability more; Therefore; If select one group of experiment condition as the process conditions after optimizing according to the expection stress criterion, can avoid the filler in the groove cavity to occur on the one hand, make the filler in the groove satisfy the stress criterion of expection on the other hand.
Fig. 5 is the flow chart of the channel filling method in a kind of fleet plough groove isolation structure provided by the present invention.This method is applied in the HDP CVD device of prior art; HDP CVD device mainly comprises source power generator, process chamber, inductance coil, electrostatic chuck and high frequency power generator; Wherein, provide the source power generator of source power to connect the inductance coil in the process chamber, the inductance coil excited gas produces plasma; Control sheet or product wafer place on the electrostatic chuck in the process chamber, and high frequency power generator applies high frequency power on control sheet or product wafer.
As shown in Figure 5, the channel filling method in a kind of fleet plough groove isolation structure provided by the present invention may further comprise the steps:
In the present invention, the product wafer is meant the wafer of actual production, and technological parameter group A0 is meant the maturation process parameter group of using in the actual production before the optimization of product wafer.
Suppose that A0 comprises: gas flow a0, source power size b0, high frequency power size c0.
Many groups experiment condition of being set up comprises at least:
The 1st group of experiment condition: in process chamber, adopt HDP CVD technology and controlling sheet surface deposition one deck oxide according to technological parameter group A0, the thickness of said oxide is d.
The 1st group of experiment condition is and only adopts A0 to experimentize.
The 2nd group of experiment condition: in process chamber, adopt HDP CVD technology and controlling sheet surface deposition one deck oxide according to technological parameter group A0, the thickness of said oxide is d, feeds refrigerating gas to process chamber then the control sheet is cooled off.
The difference of the 2nd group of experiment condition and the 1st group of experiment condition is: after adopting A0 to experimentize, feed gas to process chamber the control sheet is cooled off.
Wherein, the refrigerating gas of feeding is argon gas (Ar), oxygen (O
2) or helium (He).
The flow of the refrigerating gas that feeds is 10～10000 mark condition milliliter per minutes (sccm).
The time of cooling is 10 to 500 seconds (s).
The 3rd group of experiment condition: in process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/n; Feeding refrigerating gas to process chamber cools off the control sheet; Repeat this step when the thickness of post-depositional oxide is d, feed refrigerating gas to process chamber the control sheet is cooled off the back end, wherein; N is the first preset experimental variable, and n is the positive integer more than or equal to 2.
The difference of the 3rd group of experiment condition and the 2nd group of experiment condition is: the 2nd group of experiment condition is that deposit thickness is to feed gas to process chamber behind the oxide of d the control sheet is cooled off; The 3rd group of experiment condition feeds gas to process chamber after for the oxide of deposition d/n the control sheet cooled off; And then to process chamber feeding gas the control sheet is cooled off behind the oxide of deposition d/n; Repeat according to the method described above; When the thickness of post-depositional oxide is d, feeds gas to process chamber and then finish after sheet cools off controlling.
Wherein, the concrete numerical value of n is rule of thumb confirmed.
The refrigerating gas that feeds is argon gas (Ar), oxygen (O
2) or helium (He).
The flow of the refrigerating gas that feeds is 10～10000 mark condition milliliter per minutes (sccm).
The time of cooling is 10～500 seconds (s).
Many groups experiment condition of being set up also can further comprise:
The 4th group of experiment condition: in process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/m; To control sheet and be placed to and to control sheet again behind the outer natural cooling of process chamber and be placed in the process chamber, repeat this step, when the thickness of post-depositional oxide is d; To control and finish after sheet is placed to the outer natural cooling of process chamber; Wherein, m is the second preset experimental variable, and m is the positive integer more than or equal to 2.
The difference of the 4th group of experiment condition and the 3rd group of experiment condition is: the 3rd group of experiment condition is to feed gas to process chamber behind the oxide of every deposition d/n the control sheet is cooled off, and will control sheet behind the oxide that the 4th group of experiment condition is every deposition d/m and be placed to and will control sheet again behind the natural cooling outside the process chamber and be placed in the process chamber.
The time of natural cooling is 10 to 500 seconds (s).
Many groups experiment condition of being set up also can further comprise:
The 5th group of experiment condition: the value that increases or reduce n; With increase or reduce after the value of n as the value of the n after upgrading; In process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/n; Feed gas to process chamber the control sheet is cooled off, repeat this step when the thickness of post-depositional oxide is d, feed to process chamber and finish after gas cools off the control sheet.
The increase of n value or reduce step-length and can decide by actual conditions, if experiment condition allows, preferably, the n value is the step-length increasing or decreasing with 1, like this, can set up some groups of experiment conditions again according to the 5th group of experiment condition.
The 6th group of experiment condition: the value that increases or reduce m; With increase or reduce after the value of m as the value of the m after upgrading; In process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/m, will control sheet and be placed to process chamber and will control sheet again behind the natural cooling outward and be placed in the process chamber, repeat this step; When the thickness of post-depositional oxide is d, will controls and finish after sheet is placed to the outer natural cooling of process chamber.
The increase of m value or reduce step-length and can decide by actual conditions, if experiment condition allows, preferably, the m value is the step-length increasing or decreasing with 1, like this, then can set up some groups of experiment conditions again according to the 6th group of experiment condition.
It is thus clear that; Each group in many groups experiment condition that the present invention set up has all adopted the technological parameter group A0 before optimizing; The differences of many group experiment conditions only are: whether deposit thickness is the control sheet to be cooled behind the oxide of d or deposit thickness is the number of times that cools in the process of oxide of d; Because the technological parameter group A0 before optimizing is the maturation process parameter group in the actual production, so A0 can guarantee to satisfy the trench fill ability, and the distinctive points of organizing experiment condition is not to be the major parameter that influences the trench fill ability more; Therefore; If select one group of experiment condition as the process conditions after optimizing according to the expection stress criterion, can avoid the filler in the groove cavity to occur on the one hand, make the filler in the groove satisfy the stress criterion of expection on the other hand.
The sheet of control described in the embodiment of the invention is meant mating plate, and the control sheet is generally test wafers, not as the product wafer.
Detect with write down the stress of said oxide to control sheet surface after to remove the concrete grammar of said oxide identical with prior art, repeat no more here.
Illustrate, set up five groups of experiment conditions and the oxide that write down to the one-to-one relationship between the stress on control sheet surface, as shown in table 2:
| Experiment condition | Stress |
| Condition one | -165 |
| Condition two | -153 |
| Condition three | -147 |
| Condition four | -122 |
| Condition five | -105 |
Table 2
Wherein, condition one is: in process chamber, adopt HDP CVD technology and controlling sheet surface deposition one deck oxide according to technological parameter group A0, the thickness of said oxide is d; Condition two is: in process chamber, adopt HDP CVD technology and controlling sheet surface deposition one deck oxide according to technological parameter group A0, the thickness of said oxide is d, feeds helium to process chamber the control sheet is cooled off; Condition three is: in process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/4; Feeding helium to process chamber cools off the control sheet; After repeating above-mentioned steps 4 times; When the thickness of post-depositional oxide was d, after process chamber feeding helium cooled off the control sheet, then termination condition three; Condition four is: in process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/4; To control sheet is placed to and will controls sheet again behind the outer natural cooling of process chamber and be placed in the process chamber; After repeating above-mentioned steps 4 times; When the thickness of post-depositional oxide was d, after will controlling sheet and being placed to the outer natural cooling of process chamber, then termination condition four; Condition five is: in process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/8; To control sheet is placed to and will controls sheet again behind the outer natural cooling of process chamber and be placed in the process chamber; After repeating above-mentioned steps 8 times; When the thickness of post-depositional oxide was d, after will controlling sheet and being placed to the outer natural cooling of process chamber, then termination condition five.
With condition one corresponding stress is-165 MPas (Mpa), is-153 MPas (Mpa) with condition two corresponding stress, is-147 MPas (Mpa) with condition three corresponding stress; With condition four corresponding stress is-122 MPas (Mpa), is-105 MPas (Mpa) with condition five corresponding stress, wherein; Represent tensile stress if adopt negative sign; Then compression is represented with positive sign, if adopt negative sign to represent compression, then tensile stress is represented with positive sign.
Step 505 according to the stress criterion of expection, selects pairing one group of experiment condition as the process conditions after optimizing according to said corresponding relation.
Illustrate; If the stress criterion of expection is-105 MPas (Mpa); Then alternative condition five is the process conditions after optimizing, if the stress criterion of expection is-100 MPas (Mpa), then selects the corresponding condition of immediate with it-105 MPas (Mpa) five to be the process conditions after optimizing.
Step 506 is according to the process conditions fill oxide in the groove of product wafer after optimizing.
So far, this flow process finishes.
Based on technical scheme provided by the present invention; When the many groups of foundation experiment condition; Each group in many groups experiment condition of setting up has all adopted the technological parameter group A0 before optimizing, and the difference of organizing experiment condition only is more: whether deposit thickness is the control sheet to be cooled behind the oxide of d or deposit thickness is the number of times that cools in the process of oxide of d, because the technological parameter group A0 before optimizing is the maturation process parameter group in the actual production; Therefore A0 can guarantee to satisfy the trench fill ability; The distinctive points of many group experiment conditions is not to be the major parameter that influences the trench fill ability, therefore, if select one group of experiment condition as the process conditions after optimizing based on the expection stress criterion; Can avoid the filler in the groove cavity to occur on the one hand, make that on the other hand the filler in the groove satisfies the stress criterion of expecting.
The above is merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. the channel filling method in the fleet plough groove isolation structure, this method comprises:
A, obtain technological parameter group A0 before the optimization of product wafer, wherein, technological parameter group A0 comprises a plurality of technological parameters before the said optimization;
B, the many groups of foundation experiment conditions; Wherein, The said common experiment condition of organizing experiment conditions is more: adopt high-density plasma HDP chemical vapour deposition (CVD) CVD technology and controlling sheet surface deposition oxide according to technological parameter group A0 before optimizing; The difference experiment condition of said many group experiment conditions is: whether the control sheet cooled off behind the deposition oxide, or the number of times that cools off in the process of deposition oxide;
C, provide one the control sheet; From many groups experiment condition, select one group of experiment condition deposition oxide on said control sheet successively; After implementing to finish, one group of experiment condition detects and writes down the stress of said oxide to control sheet surface; Remove said oxide again behind every detection and the once said stress of record, and then select next group experiment condition deposition oxide on said control sheet;
D, set up said many group experiment conditions and each record said oxide to the one-to-one relationship between the surperficial stress of control sheet;
E, according to the stress criterion of expection, select pairing one group of experiment condition as the process conditions after optimizing according to said corresponding relation, according to the process conditions fill oxide in the groove of product wafer after optimizing.
2. method according to claim 1 is characterized in that, many groups experiment condition of said foundation comprises:
The 1st group of experiment condition: in process chamber, adopt HDP CVD technology and controlling sheet surface deposition one deck oxide according to technological parameter group A0, the thickness of said oxide is d;
The 2nd group of experiment condition: in process chamber, adopt HDP CVD technology and controlling sheet surface deposition one deck oxide according to technological parameter group A0, the thickness of said oxide is d, feeds refrigerating gas to process chamber then the control sheet is cooled off;
The 3rd group of experiment condition: in process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/n; Feeding refrigerating gas to process chamber cools off the control sheet; Repeat above-mentioned steps when the thickness of post-depositional oxide is d, feed refrigerating gas to process chamber the control sheet is cooled off the back end, wherein; N is the first preset experimental variable, and n is the positive integer more than or equal to 2.
3. method according to claim 2 is characterized in that, many groups experiment condition of said foundation further comprises:
The 4th group of experiment condition: in process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/m; To control sheet and be placed to and to control sheet again behind the outer natural cooling of process chamber and be placed in the process chamber, repeat above-mentioned steps, when the thickness of post-depositional oxide is d; To control and finish after sheet is placed to the outer natural cooling of process chamber; Wherein, m is the second preset experimental variable, and m is the positive integer more than or equal to 2.
4. method according to claim 3 is characterized in that, many groups experiment condition of said foundation further comprises:
The 5th group of experiment condition: the value that increases or reduce n; With increase or reduce after the value of n as the value of the n after upgrading; In process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/n; Feed gas to process chamber the control sheet is cooled off, repeat above-mentioned steps when the thickness of post-depositional oxide is d, feed to process chamber and finish after gas cools off the control sheet;
The 6th group of experiment condition: the value that increases or reduce m; With increase or reduce after the value of m as the value of the m after upgrading; In process chamber, adopt HDP CVD technology and according to technological parameter group A0 after every deposition one layer thickness in control sheet surface is the oxide of d/m, will control sheet and be placed to process chamber and will control sheet again behind the natural cooling outward and be placed in the process chamber, repeat above-mentioned steps; When the thickness of post-depositional oxide is d, will controls and finish after sheet is placed to the outer natural cooling of process chamber.
5. method according to claim 4 is characterized in that, the refrigerating gas that feeds in said the 2nd group of experiment condition, the 3rd group of experiment condition and the 5th group of experiment condition is argon Ar, oxygen O
2Or helium He.
6. method according to claim 5 is characterized in that,
The flow of the refrigerating gas of said feeding is 10 to 10000 mark condition milliliter per minutes;
The time of said cooling is 10 to 500 seconds.
7. method according to claim 5 is characterized in that, the time of natural cooling is 10 to 500 seconds in said the 4th group of experiment condition and the 6th group of experiment condition.
8. method according to claim 5 is characterized in that, selects one group of experiment condition to comprise as the method for the process conditions after optimizing described in the step e:
If there is the stress that equates with the stress criterion of expection in the stress that is write down, then based on said one-to-one relationship, the pairing experiment condition of selecting to equate with the stress criterion of expection of stress is as the process conditions after optimizing;
If there is not the stress that equates with the stress criterion of expection in the stress that is write down, then according to said one-to-one relationship, the pairing experiment condition of the immediate stress of stress criterion of selection and expection is as the process conditions after optimizing.
9. method according to claim 4 is characterized in that, said oxide is silicon dioxide SiO
2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN104928644A (en) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Technological parameter optimization method of PVD system |
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| US7176039B1 (en) * | 2004-09-21 | 2007-02-13 | Novellus Systems, Inc. | Dynamic modification of gap fill process characteristics |
| CN101728291A (en) * | 2008-10-14 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Method for determining height of insulating material in shallow trench |
| CN101752292A (en) * | 2008-12-19 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow groove insolation structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7176039B1 (en) * | 2004-09-21 | 2007-02-13 | Novellus Systems, Inc. | Dynamic modification of gap fill process characteristics |
| CN101728291A (en) * | 2008-10-14 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Method for determining height of insulating material in shallow trench |
| CN101752292A (en) * | 2008-12-19 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow groove insolation structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104928644A (en) * | 2014-03-18 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Technological parameter optimization method of PVD system |
| CN104928644B (en) * | 2014-03-18 | 2018-03-30 | 中芯国际集成电路制造(上海)有限公司 | A kind of optimization method of PVD system technological parameter |
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