CN104928644B - A kind of optimization method of PVD system technological parameter - Google Patents
A kind of optimization method of PVD system technological parameter Download PDFInfo
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- CN104928644B CN104928644B CN201410101122.XA CN201410101122A CN104928644B CN 104928644 B CN104928644 B CN 104928644B CN 201410101122 A CN201410101122 A CN 201410101122A CN 104928644 B CN104928644 B CN 104928644B
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Abstract
The present invention provides a kind of optimization method of PVD system technological parameter, and methods described includes：According to the thickness of pre-deposition film, total sedimentation time needed for film described in pre-deposition is obtained；Total sedimentation time is divided into some steps, often has cooling step after step deposition, constitutes several depositions/cooling circulation；The ascendant trend of depositing temperature in the film deposition process, rise in the depositing temperature in slow step and set shorter cool time, rise in the depositing temperature in very fast step and set longer cool time.According to the optimization method of the PVD system technological parameter of the present invention, improve cooling effect, control deposition film crystal grain caused by temperature height is grown up problem, improves WTW thickness controls, and then is enhanced product performance and yields.
Description
Technical field
The present invention relates to semiconductor fabrication process, more particularly to a kind of optimization method of PVD system technological parameter.
Background technology
Physical vapour deposition (PVD)（Physical Vapor Deposition, PVD）System is widely used in current semiconductor product
In the manufacture craft of product.Existing a kind of special rotary PVD system, it is possible to achieve high yield and plural layers are same
Deposited in PVD chamber.
But it have been found that in this rotary PVD system, when the metallic film of deposition of thick, due to being set
The limitation of standby cooling system itself and volume, causes same batch wafers surface temperature different, causes crystallite dimension and film
The change of matter, cause WTW between different chips（wafer to wafer）Thickness range becomes big, and good WTW thickness controls are
Manufacture the key of the high performance logic chip based on HKMG technologies.By taking depositing Al 30K as an example, six wafers form a batch,
WTW thickness changes are very big, about 4000 angstroms.If in technical process, the rotary speed for setting deposition table is 20rpm, then chip
Between uniformity it is better than the PVD of conventional rotating speed.In fact, metal grain size difference can cause RS/Thickness values to fluctuate
It is very big, and then influence the wet-etch rate during back segment is made.As shown in figure 1, chip temperature height can cause the crystalline substance of deposited metal
Particle size becomes big, and crystal boundary is reduced, and crystal boundary reduces the resistance that can reduce metal accordingly, namely resistance is smaller means thickness
It is bigger.Based on this rotary PVD system, it is for different positions in system inherently design to cause metal thickness to fluctuate big root
The cooling effect for putting deposition table is different, and this causes the difference of wafer surface temperature, and temperature is higher, and crystallite dimension is bigger, measurement
The thickness value arrived is also bigger.Fig. 2A shows the SEM figures of the larger film of the thickness for performing existing six circulation technologies preparation,
As seen from the figure, crystallite dimension is big, and crystal boundary is few.Fig. 2 B show that the thickness for performing existing six circulation technologies preparation is normal
Film SEM figure, as seen from the figure, crystallite dimension is small, and crystal boundary is more.
How to solve the problems, such as it is in uneven thickness between chip, generally by two kinds of solutions：First, cooling system is redesigned
To strengthen cooling effect, this scheme can fundamentally solve the problems, such as exist, but cost is too high time-consuming long.2nd, changed
Journey parameter, increasing more circulations, reduce the sedimentation time circulated every time, this method is easier to realize with respect to the first, but
It is the increase circulating cooling time, total process time can be caused to increase, reduces output.As shown in Figure 3 A and Figure 3 B, Fig. 3 A are 6
The technological parameter of secondary circulation, Fig. 3 B are the technological parameter of 18 circulations, and two groups of numbers of contrast are it has been found that 6 depositions and cooling circulation
Total time-consuming 2676s, per hour flow number（WPH）For 8.07pcs/hr；And when circulation increases to 18 times, deposition and cooling circulation
Total time-consuming reaches 4116s, and WPH is reduced to 5.24pcs/hr, and WTW thickness changes decrease below 1000 angstroms from 4000 angstroms.Although
WTW thickness distributions are improved, but reduce yield.
As shown in figure 4, when performing the technological parameter of 6 circulations, during process operation, temperature is increased beyond
180 DEG C, and growth over time, the speed that temperature rises also are becoming big.
Therefore, it is badly in need of a kind of new technique optimization method, to overcome deficiency of the prior art.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will enter in specific embodiment part
One step describes in detail.The Summary of the present invention is not meant to attempt to limit technical scheme claimed
Key feature and essential features, the protection domain for attempting to determine technical scheme claimed is not meant that more.
In order to solve problems of the prior art, the present invention proposes a kind of optimization side of PVD system technological parameter
Method, comprise the following steps：
According to the thickness of pre-deposition film, total sedimentation time needed for film described in pre-deposition is obtained；By total deposition
Time is divided into some steps, often has cooling step after step deposition, constitutes several depositions/cooling circulation；Sunk according to the film
The ascendant trend of depositing temperature during product, rise in the depositing temperature in slow step and set shorter cool time,
Rise in the depositing temperature in very fast step and set longer cool time.
Further, the film available for any PVD method deposition.
Further, the film is metallic aluminium, and predetermined thickness is 25000~35000 angstroms.
Further, the total sedimentation time for depositing the aluminium film is divided into 24 steps, corresponding 24 depositions/cooling circulation.
Further, described 24 depositions are cooled down into circulation and is divided into three parts.
Further, the dividing mode of the three parts is：Part I circulates for 1-8, and Part II circulates for 9-16, the
Three parts circulate for 17-24.
Further, it is 10-20s that the Part I, which often walks the circulating cooling time, and the Part II often walks circulating cooling
Time is 25-35s, and it is 40-50s that the Part III, which often walks the circulating cooling time, and it is 73-80s often to walk sedimentation time.
It is to sum up shown, according to the optimization method of the PVD system technological parameter of the present invention, improve cooling effect, control deposition
Film crystal grain caused by temperature height is grown up problem, improves WTW thickness controls, and then is enhanced product performance and yields.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, for explaining the principle of the present invention.
In accompanying drawing：
Fig. 1 its to perform existing six circulation technology parameters when, deposited film thickness and location diagram；
Fig. 2A corresponds to mark the SEM for the film for being to scheme in Fig. 1；
Fig. 2 B correspond to mark the SEM for the film for being to scheme in Fig. 1；
Fig. 3 A are the technological parameter list figure for performing 6 circulations；
Fig. 3 B are the technological parameter list figure for performing 18 circulations；
When Fig. 4 is performs existing six circulation technology parameters, the graph of a relation of temperature and sedimentation time；
Fig. 5 is the technological parameter list figure of exemplary embodiment of the present；
Fig. 6 is to be changed according to temperature in the method film deposition process for performing exemplary embodiment of the present with sedimentation time
The comparison diagram of curve and the curve of existing six circulation technologies；
Fig. 7 is film thickness and position relationship curve and existing six according to prepared by the method for exemplary embodiment of the present
The comparison diagram of the curve of secondary circulation technology.
Embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention can be able to without one or more of these details
Implement.In other examples, in order to avoid obscuring with the present invention, do not enter for some technical characteristics well known in the art
Row description.
In order to thoroughly understand the present invention, detailed step will be proposed in following description, to explain proposition of the present invention
A kind of PVD system technological parameter optimization method.Obviously, execution of the invention is not limited to the technology people of semiconductor applications
The specific details that member is familiar with.Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, this hair
It is bright to have other embodiment.
It should be appreciated that when using term "comprising" and/or " comprising " in this manual, it is indicated described in presence
Feature, entirety, step, operation, element and/or component, but do not preclude the presence or addition of other one or more features, entirety,
Step, operation, element, component and/or combinations thereof.
[exemplary embodiment]
It present invention will be described in further detail below, it should be appreciated that those skilled in the art can modify herein
The present invention of description, and still realize the advantageous effects of the present invention.
According to the thickness of pre-deposition film, total sedimentation time needed for film described in pre-deposition, different-thickness film are obtained
Total sedimentation time is different.Cool time setting procedure is as follows：Total sedimentation time is divided into some steps first, often step deposition
There is a cooling step afterwards, therefore constitute several depositions/cooling circulation.Deposition temperature in the film deposition process
The ascendant trend of degree, rise in depositing temperature in slow step and set shorter cool time, rise very fast step in temperature
Middle setting longer cool time.The ascendant trend of depositing temperature can be according to the temperature on the deposition film surface in technical process
Test to judge.Some steps can be 6~36 steps, such as 6 steps, 18 steps, 24 steps, 36 steps etc., but be not limited thereto.Value
Obtain one to be mentioned that, because the gross thickness of pre-deposited film determines caused total amount of heat in deposition process, according to cooling step
Ability determine required for cooling step number, the thickness of pre-deposition film is thicker, its in requisition for cool time and cooling step number
Also can increase accordingly, when the thickness of pre-deposition film is smaller, its in requisition for cool time and cooling step number can be corresponding
Reduce.During cooling step number setting, it should be noted that the collocation of optimization deposition/cool time, when reducing unnecessary cooling
Between, to improve the overall throughput of equipment.The method of the present invention goes for the preparation process of any PVD method deposition film.
As one embodiment, the aluminium film that predetermined thickness is 25000~35000 angstroms is deposited.During by total deposition
Between be divided into some steps, some steps can be 6~36 steps, such as 6 steps, 18 steps, 24 steps, 36 steps etc., but be not limited thereto,
For the short film of the relatively thin total sedimentation time of thickness ratio, its substep number can be reduced suitably, when always being deposited for thickness ratio is thicker
Between long film, then its substep number can accordingly increase, thickness and required total sedimentation time with specific reference to actual deposition film
Set.As an example, it is divided into 24 steps, it is 73-80s often to walk deposition time ranges.
Further, it is known that the total sedimentation time for the aluminium film that deposition predetermined thickness is 30000 angstroms is 1836s, by 1836s
It is divided into 24 steps, often step is 76s, often has cooling step after step deposition, therefore constitutes 24 depositions/cooling circulation, then by 24
Individual circulation is divided into three parts, rises in depositing temperature in slow step and sets shorter cool time, rises in temperature very fast
The step of in set longer cool time.The ascendant trend of depositing temperature can be according to the deposition film surface in technical process
Temperature test judge.According to temperature rising curve figure as shown in Figure 4, Part I is set as 1-8 circulations often step cooling
Time is 10-20s, is chosen as 15s, and Part II is that often to walk cool time be 25-35s for 9-16 circulations, is chosen as 30s, the 3rd
Part is that often step cool time is 40-50s for 17-24 circulations, is chosen as 45s.The setting of embodiment design parameter is as shown in Figure 5.Value
Obtain one to be mentioned that, in order to save as far as possible the process time, when cool time sets, unnecessary cool time is reduced, to carry
The overall throughput of high equipment.
So that deposit thickness is 30000 angstroms of aluminium film as an example, set according to the optimization method of the technological parameter of the present invention
Cool time, total processing time do not increase.It is illustrated in figure 6 and deposition process is implemented using the technological parameter of the present invention
In, temperature rising curve and six times circulation when comparison diagram.As seen from Figure 6, process parameter optimizing, thin film deposition are passed through
Temperature rises and substantially slowed down in journey, and maximum temperature is less than 120 DEG C, rises with temperature during six circulation technology of execution and is more than 180 DEG C
Compared to improving significantly.As shown in fig. 7, separator bar left-most curve is using existing six circulation technology parameters preparation institute in figure
The curve of film thickness is obtained, consistency of thickness is poor as seen from Figure 7, and fluctuation is very big, and curve is root on the right of separator bar in Fig. 7
The curve of gained film thickness is prepared according to exemplary embodiment of the present technological parameter, thickness distribution is uniform as seen from the figure,
Approached with predetermined value, uniformity is very good.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in described scope of embodiments.In addition people in the art
Member can also make more kinds of it is understood that the invention is not limited in above-described embodiment according to the teachings of the present invention
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (7)
1. a kind of optimization method of PVD system technological parameter, including：
According to the thickness of pre-deposition film, total sedimentation time needed for film described in pre-deposition is obtained；
Total sedimentation time is divided into some steps, often has cooling step after step deposition, constitutes several deposition/coolings and follow
Ring；
The ascendant trend of depositing temperature in the film deposition process, rise in the depositing temperature in slow step and set
Fixed shorter cool time, rise in the depositing temperature in very fast step and set longer cool time.
2. the method as described in claim 1, it is characterised in that the film for any PVD method deposition.
3. the method as described in claim 1, it is characterised in that the film is metallic aluminium, and the predetermined thickness of the film is
25000~35000 angstroms.
4. method as claimed in claim 3, it is characterised in that the total sedimentation time for depositing the aluminium film is divided into 24
Step, corresponding 24 depositions/cooling circulation.
5. method as claimed in claim 4, it is characterised in that 24 depositions/cooling circulation is divided into three parts.
6. method as claimed in claim 5, it is characterised in that the dividing mode of three parts is：Part I is 1-8
Circulation, Part II circulate for 9-16, and Part III circulates for 17-24.
7. method as claimed in claim 6, it is characterised in that it is 10-20s that the Part I, which often walks the circulating cooling time,
It is 25-35s that the Part II, which often walks the circulating cooling time, and it is 40-50s that the Part III, which often walks the circulating cooling time, often
Step sedimentation time is 73-80s.
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| CN101736307A (en) * | 2008-11-24 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | Plasma vapor deposition method |
| CN101752292A (en) * | 2008-12-19 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow groove insolation structure |
| CN101882588A (en) * | 2009-05-06 | 2010-11-10 | 中芯国际集成电路制造(北京)有限公司 | Method for reducing whisker defects on surface of aluminum lining pad |
| CN102479739A (en) * | 2010-11-24 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Trench filling method for shallow trench isolation structure |
| CN102931059A (en) * | 2011-08-11 | 2013-02-13 | 无锡华润上华科技有限公司 | Back gold sputtering method |
-
2014
- 2014-03-18 CN CN201410101122.XA patent/CN104928644B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736307A (en) * | 2008-11-24 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | Plasma vapor deposition method |
| CN101752292A (en) * | 2008-12-19 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Method for making shallow groove insolation structure |
| CN101882588A (en) * | 2009-05-06 | 2010-11-10 | 中芯国际集成电路制造(北京)有限公司 | Method for reducing whisker defects on surface of aluminum lining pad |
| CN102479739A (en) * | 2010-11-24 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Trench filling method for shallow trench isolation structure |
| CN102931059A (en) * | 2011-08-11 | 2013-02-13 | 无锡华润上华科技有限公司 | Back gold sputtering method |
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