CN106531637A - Method for improving defects of aluminum film - Google Patents
Method for improving defects of aluminum film Download PDFInfo
- Publication number
- CN106531637A CN106531637A CN201611104106.1A CN201611104106A CN106531637A CN 106531637 A CN106531637 A CN 106531637A CN 201611104106 A CN201611104106 A CN 201611104106A CN 106531637 A CN106531637 A CN 106531637A
- Authority
- CN
- China
- Prior art keywords
- aluminium film
- semiconductor substrate
- layer
- film defect
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 46
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000007547 defect Effects 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 239000004411 aluminium Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims 3
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical group [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 239000005365 phosphate glass Substances 0.000 claims 1
- XLUBVTJUEUUZMR-UHFFFAOYSA-B silicon(4+);tetraphosphate Chemical group [Si+4].[Si+4].[Si+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O XLUBVTJUEUUZMR-UHFFFAOYSA-B 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving defects of an aluminum film. The method comprises the steps of forming a barrier layer on a semiconductor substrate by using a physical sputtering deposition machine; taking out the semiconductor substrate on which the barrier layer is formed from the physical sputtering deposition machine and placing the semiconductor substrate under a room temperature condition for a period of time to make crystal grains and stress of the barrier layer tend to be stable at a room temperature; and then carrying out the process of preparing the aluminum film on the upper surface of the barrier layer. Therefore, unstable factors when the aluminum film is formed are reduced, disordered growth of aluminum crystal grains in the growth process is inhibited; and beard-shaped defects of the aluminum film are effectively reduced to improve the yield of a silicon wafer.
Description
Technical field
A kind of the present invention relates to technical field of manufacturing semiconductors, more particularly to method for improving aluminium film defect.
Background technology
As semiconductor technology develops, because of its low cost, resistivity is excellent to wait process characteristic wide to aluminium welding pad formation process
General application.
In general, before the aluminium film growth of aluminium welding pad is formed, one layer of barrier layer can be first generated, to prevent metal from interconnecting
Copper diffusion in layer.At present, the technique for growing barrier layer is typically all carried out at high temperature, and this causes the barrier layer of firm generation to be answered
Power and crystal grain are not very stable, which increases the unstable factor of aluminium film film forming, and aluminium film misgrowth meeting at high temperature
Hu whisker defects (whisker defect) are formed, as the thickness of aluminium film is more and more thicker, misgrowth under aluminium film high temperature is formed
Hu whisker defects can be difficult control, or even the quality of aluminium welding pad can be had a strong impact on, and then badly influence silicon chip yields, this
It is that those skilled in the art are not expected to see.
The content of the invention
In view of above-mentioned technical problem, it is contemplated that improving excrescent situation under aluminium film high temperature, reduces misgrowth
During the Hu whisker defects that formed, improve the yields of silicon chip.
The present invention solves the main technical schemes of above-mentioned technical problem：
A kind of method for improving aluminium film defect includes：
Step S1, there is provided semi-conductive substrate；
Step S2, the Semiconductor substrate is put in physical ion sputtering machine table carries out physical gas-phase deposition, with
Barrier layer is formed in the Semiconductor substrate upper surface；
Step S3, after the Semiconductor substrate is removed from the physical ion sputtering machine table, serves as a contrast to the quasiconductor
Bottom carries out the cooling technique of the scheduled time；
Step S4, forms the aluminium film on the barrier layer.
Preferably, the material on the barrier layer is tantalum nitride.
Preferably, in step S3, the cooling technique is to place at ambient temperature the Semiconductor substrate.
Preferably, the scheduled time is more than half an hour.
Preferably, the Semiconductor substrate includes：
Silicon substrate；
Dielectric layer, is arranged on the silicon substrate；
Metal interconnecting layer, is arranged on the silicon substrate through the dielectric layer；
Passivation layer, is arranged on the dielectric layer and the metal interconnecting layer, and is provided with exposure in the passivation layer
The groove of the part metal interconnecting layer upper surface.
Preferably, the material of the metal interconnecting layer is copper (Cu) or aluminum (Al).
Preferably, the material of the passivation layer is phosphosilicate glass (PSG).
Preferably, the material of the dielectric layer is silicon dioxide.
Preferably, in step S4, the aluminium film is formed using physical gas-phase deposition.
Preferably, in step S4, the physical vapour deposition (PVD) work is carried out in the physical ion sputtering machine table
Skill.
Above-mentioned technical proposal has the advantage that or beneficial effect：
A kind of method for improving aluminium film defect disclosed by the invention, by using sputter deposition board in quasiconductor
After barrier layer is formed on substrate, the Semiconductor substrate for being formed with barrier layer from sputter deposition board is taken out and placed
At ambient temperature for a period of time so that crystal grain and stress tend towards stability at room temperature on barrier layer, are carried out at barrier layer afterwards again
Upper surface prepares the technique of aluminium film, so as to reduce unstable factor during aluminium film film forming, it is suppressed that aluminium grain is in growth course
In random growth, effectively reduce the generation of aluminium film Hu whisker defects, and then improve the yields of silicon chip.
Description of the drawings
With reference to appended accompanying drawing, to be described more fully embodiments of the invention.However, appended accompanying drawing be merely to illustrate and
Illustrate, and be not meant to limit the scope of the invention.
Fig. 1 is the method flow diagram that the present invention improves aluminium film defect；
Fig. 2-5 improves the flowage structure schematic diagram of the method for aluminium film defect for the present invention.
Specific embodiment
The present invention is further illustrated with specific embodiment below in conjunction with the accompanying drawings, but not as the limit of the present invention
It is fixed.
As shown in figure 1, the present embodiment is related to a kind of method for improving aluminium film defect, specifically, the method includes：
Step S1, there is provided semi-conductive substrate 1, structure as shown in Figure 2.
In an optional embodiment of the present invention, above-mentioned Semiconductor substrate 1 includes：Silicon substrate, be arranged at silicon substrate it
On dielectric layer, be arranged at the metal interconnecting layer on silicon substrate through dielectric layer and be arranged at dielectric layer and metal interconnecting layer it
On passivation layer, and in passivation layer, be provided with the groove of expose portion metal interconnecting layer upper surface.
In an optional embodiment of the present invention, the material of above-mentioned metal interconnecting layer is copper or aluminum.
In an optional embodiment of the present invention, the material of above-mentioned passivation layer is phosphosilicate glass.
In an optional embodiment of the present invention, the material of above-mentioned dielectric layer is silicon dioxide.
Step S2, above-mentioned Semiconductor substrate 1 is put in physical ion sputtering machine table carries out physical gas-phase deposition, with
Barrier layer (or bottom adhesive layer) 2, structure as shown in Figure 3 are formed in 1 upper surface of Semiconductor substrate.
In an optional embodiment of the present invention, the material on above-mentioned barrier layer 2 is tantalum nitride.
Step S3, after the Semiconductor substrate 1 for being formed with barrier layer 2 is removed from physical ion sputtering machine table, half-and-half leads
Body substrate 2 carries out the cooling technique of the scheduled time so that crystal grain and stress tend towards stability at room temperature on barrier layer 2, to form crystalline substance
Grain and the more stable barrier layer 2 ' of stress, so that reduce unstable factor during aluminium film film forming；Structure as shown in Figure 3.
In an optional embodiment of the present invention, above-mentioned cooling technique is to be formed with the Semiconductor substrate 1 on barrier layer 2
Place at ambient temperature.
In an optional embodiment of the present invention, the above-mentioned scheduled time is more than half an hour.
Step S4, forms aluminium film using physical gas-phase deposition on barrier layer 2.
In an optional embodiment of the present invention, above-mentioned physical vapour deposition (PVD) work is carried out in physical ion sputtering machine table
Skill.
Additionally, it is noted that the present invention forms barrier layer, Zhi Houzai suitable for all first with physical sputtering board
The technique for forming aluminium film, and the present invention is with low cost, it is simple for process, therefore extensively can apply.
It should be appreciated by those skilled in the art that those skilled in the art are can be with reference to prior art and above-described embodiment
Change case is realized, be will not be described here.Such change case has no effect on the flesh and blood of the present invention, will not be described here.
Above presently preferred embodiments of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, the equipment and structure wherein not described in detail to the greatest extent are construed as giving reality with the common mode in this area
Apply；Any those of ordinary skill in the art, under without departing from technical solution of the present invention ambit, using the disclosure above
Methods and techniques content make many possible variations and modification to technical solution of the present invention, or be revised as equivalent variations etc.
Effect embodiment, this has no effect on the flesh and blood of the present invention.Therefore, every content without departing from technical solution of the present invention, foundation
The technical spirit of the present invention still falls within the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification
In the range of technical scheme protection.
Claims (10)
1. a kind of method for improving aluminium film defect, it is characterised in that include：
Step S1, there is provided semi-conductive substrate；
Step S2, the Semiconductor substrate is put in physical ion sputtering machine table carries out physical gas-phase deposition, with institute
State Semiconductor substrate upper surface and form barrier layer；
Step S3, after the Semiconductor substrate is removed from the physical ion sputtering machine table, enters to the Semiconductor substrate
The cooling technique of the row scheduled time；
Step S4, forms the aluminium film on the barrier layer.
2. the method for improving aluminium film defect as claimed in claim 1, it is characterised in that the material on the barrier layer is nitridation
Tantalum.
3. the method for improving aluminium film defect as claimed in claim 1, it is characterised in that in step S3, the bosher
Skill is to place at ambient temperature the Semiconductor substrate.
4. the method for improving aluminium film defect as claimed in claim 1, it is characterised in that the scheduled time is more than half an hour.
5. the method for improving aluminium film defect as claimed in claim 1, it is characterised in that the Semiconductor substrate includes：
Silicon substrate；
Dielectric layer, is arranged on the silicon substrate；
Metal interconnecting layer, is arranged on the silicon substrate through the dielectric layer；
Passivation layer, is arranged on the dielectric layer and the metal interconnecting layer, and is provided with expose portion in the passivation layer
The groove of the metal interconnecting layer upper surface.
6. the method for improving aluminium film defect as claimed in claim 5, it is characterised in that the material of the metal interconnecting layer is copper
Or aluminum.
7. the method for improving aluminium film defect as claimed in claim 5, it is characterised in that the material of the passivation layer is silicon phosphate
Glass.
8. the method for improving aluminium film defect as claimed in claim 5, it is characterised in that the material of the dielectric layer is titanium dioxide
Silicon.
9. the method for improving aluminium film defect as claimed in claim 1, it is characterised in that in step S4, using physics
Gas-phase deposition forms the aluminium film.
10. the method for improving aluminium film defect as claimed in claim 7, it is characterised in that in step S4, in the thing
The physical gas-phase deposition is carried out in reason ion sputtering board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611104106.1A CN106531637A (en) | 2016-12-05 | 2016-12-05 | Method for improving defects of aluminum film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611104106.1A CN106531637A (en) | 2016-12-05 | 2016-12-05 | Method for improving defects of aluminum film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106531637A true CN106531637A (en) | 2017-03-22 |
Family
ID=58354929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611104106.1A Pending CN106531637A (en) | 2016-12-05 | 2016-12-05 | Method for improving defects of aluminum film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106531637A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166821A (en) * | 2018-08-28 | 2019-01-08 | 武汉新芯集成电路制造有限公司 | The forming method on barrier layer, the forming method of three-dimensional integrated device and wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399214A (en) * | 2007-09-29 | 2009-04-01 | 中芯国际集成电路制造(上海)有限公司 | Method for making metal pad capable of avoiding corrosion by top layer metal |
| CN101452846A (en) * | 2007-11-30 | 2009-06-10 | 上海华虹Nec电子有限公司 | Thick aluminum film forming process |
| CN101640179A (en) * | 2008-07-31 | 2010-02-03 | 中芯国际集成电路制造(北京)有限公司 | Method for manufacturing weld pad structure |
| CN101882588A (en) * | 2009-05-06 | 2010-11-10 | 中芯国际集成电路制造(北京)有限公司 | Method for reducing whisker defects on surface of aluminum lining pad |
| CN102237299A (en) * | 2010-04-27 | 2011-11-09 | 中芯国际集成电路制造(上海)有限公司 | Method for forming aluminum thin film |
| CN102709180A (en) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | Preparation process of aluminium thin film |
| CN103165483A (en) * | 2013-02-20 | 2013-06-19 | 上海华力微电子有限公司 | Method for reducing defects on aluminum gasket surface |
-
2016
- 2016-12-05 CN CN201611104106.1A patent/CN106531637A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399214A (en) * | 2007-09-29 | 2009-04-01 | 中芯国际集成电路制造(上海)有限公司 | Method for making metal pad capable of avoiding corrosion by top layer metal |
| CN101452846A (en) * | 2007-11-30 | 2009-06-10 | 上海华虹Nec电子有限公司 | Thick aluminum film forming process |
| CN101640179A (en) * | 2008-07-31 | 2010-02-03 | 中芯国际集成电路制造(北京)有限公司 | Method for manufacturing weld pad structure |
| CN101882588A (en) * | 2009-05-06 | 2010-11-10 | 中芯国际集成电路制造(北京)有限公司 | Method for reducing whisker defects on surface of aluminum lining pad |
| CN102237299A (en) * | 2010-04-27 | 2011-11-09 | 中芯国际集成电路制造(上海)有限公司 | Method for forming aluminum thin film |
| CN102709180A (en) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | Preparation process of aluminium thin film |
| CN103165483A (en) * | 2013-02-20 | 2013-06-19 | 上海华力微电子有限公司 | Method for reducing defects on aluminum gasket surface |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166821A (en) * | 2018-08-28 | 2019-01-08 | 武汉新芯集成电路制造有限公司 | The forming method on barrier layer, the forming method of three-dimensional integrated device and wafer |
| CN109166821B (en) * | 2018-08-28 | 2020-02-21 | 武汉新芯集成电路制造有限公司 | Forming method of barrier layer, forming method of three-dimensional integrated device and wafer |
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Application publication date: 20170322 |