CN101882567B - Plasma processing apparatus and high frequency short-circuit apparatus - Google Patents
Plasma processing apparatus and high frequency short-circuit apparatus Download PDFInfo
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- CN101882567B CN101882567B CN2010102060653A CN201010206065A CN101882567B CN 101882567 B CN101882567 B CN 101882567B CN 2010102060653 A CN2010102060653 A CN 2010102060653A CN 201010206065 A CN201010206065 A CN 201010206065A CN 101882567 B CN101882567 B CN 101882567B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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Abstract
A plasma processing apparatus and a high frequency short-circuit apparatus are provided. The plasma processing apparatus (10) includes a cavity chamber (11) containing a glass substrate (G); a lower electrode (23) arranged in the cavity chamber (11) as a carrying table for carrying the glass substrate (G); a spraying head (12) which is oppositely arranged to the lower electrode (23) and supplies processing gas to the cavity chamber (11) ; a high frequency power source (20) which is connected to an upper electrode plate (13) of the spraying head (12); a ground substrate (26) which supports the lower electrode with a lower insulator (25) and is arranged to be apart from a wall of the cavity chamber (11) ; and a short-circuit plate(36) which short-circuits the ground substrate to the wall of the cavity chamber (11), wherein a capacitor (37) is applied between the short-circuit plate (36) and the wall of the cavity chamber (11). The capacitor (37) is arranged in the wall of the cavity chamber (11).
Description
This case is that application number is that 200810091491.X, denomination of invention are the dividing an application of patent application of the short circuit current of plasma processing apparatus and high-frequency current
Technical field
The present invention relates to the short circuit current of plasma processing apparatus and high-frequency current, particularly implement the plasma processing apparatus of plasma treatment at substrate.
Background technology
As shown in Figure 6, the plasma processing apparatus 50 that the glass substrate of using at the 7th generation, the 8th liquid crystal panel is from generation to generation implemented etch processes comprises: the chamber 51 of accommodating glass substrate (hereinafter to be referred as " substrate ") G; Load the lower electrode 52 of this substrate G; Upper electrode 54 with the spray head 53 relative with this lower electrode 52.In the device 50 that this plasma is processed, supply to the processing gas in the space (hereinafter referred to as " processing space ") between upper electrode 54 and the lower electrode 52 by the high-frequency electric field excitation, produce plasma, utilize this plasma that substrate G is implemented etch processes.
In plasma processing apparatus 50, utilize ground connection substrate 55 supporting lower electrodes 52, this ground connection substrate 55 is connected with bellows by the pillar 56 that can move along the vertical direction and is connected with chamber 51.Because chamber 51 ground connection, so when etch processes, high-frequency current flows with the path of plasma → lower electrode 52 → ground connection substrate 55 → pillar 56 → bellows 57 → chamber 51 in upper electrode 54 → processing space.Herein, pillar 56, bellows 57 are made of electric conductor, and therefore, ground connection substrate 55 is idiostatic during with chamber 51 direct current, but because can produce reactance by pillar 56, bellows 57, so be not idiostatic when exchanging.
In addition because the 7th from generation to generation and the liquid crystal panel of the 8th generation very large, so lower electrode 52, ground connection substrate 55 are also very large, the result, the space between the wall of ground connection substrate 55 and chamber 51 (hereinafter referred to as " lower space ") is also very large.So, can not become during interchange between the wall of idiostatic ground connection substrate 55 and chamber 51 and produce potential difference, therefore, in lower space, also flow through high-frequency current, produce capacitance coupling plasma, paradoxical discharge.Because this plasma, the density of processing the plasma in space descends, and uniformity worsens.In addition, because paradoxical discharge, power efficiency descends, and ground connection substrate 55 is produced particle by shaving.
So, in plasma processing apparatus 50, be provided with the laminal short board 58 (for example with reference to patent documentation 1) that is consisted of by conductive material of the wall short circuit when exchanging that makes ground connection substrate 55 and chamber 51.
But, when the substrate G enforcement etch processes that the 7th generation, the 8th liquid crystal panel is from generation to generation used, must supply with high power to processing the space, for example the High frequency power more than the 10kW.At this moment, flowing through the high-frequency current of processing space, ground connection substrate 55 is more than the 100A.In addition, short board 58 has self-inductance, and is corresponding with high-frequency current, produces inductive reactance (impedance).As a result, the current potential of ground connection substrate 55 shows as the high frequency voltage of hundreds of V.
For the current potential that makes ground connection substrate 55 descends, the number that increases short board 58 is the most effective, but owing to dispose the structure member of lifter pin frame (not shown) etc. in lower space, so the space is not abundant, is difficult to increase the number of short board 58.
Therefore, still do not eliminate the potential difference between the wall of ground connection substrate 55 and chamber 51, worry because this potential difference produces capacitance coupling plasma, paradoxical discharge in lower space.
Patent documentation 1: No. 3710081 communiques of Japan's special permission
Summary of the invention
The short circuit current that the purpose of this invention is to provide a kind of plasma processing apparatus and high-frequency current can reduce the potential difference between the inwall of the ground connection substrate of at least one party in supporting lower electrode or the lower electrode and accepting container.
In order to achieve the above object, the plasma processing apparatus of a first aspect of the present invention is characterized in that, comprising: the accepting container of accommodating substrate; The lower electrode that be configured in this accepting container, conduct loads the mounting table of aforesaid substrate; Configuration relative with this lower electrode and in above-mentioned accepting container, supply with the upper electrode of processing gas; The high frequency electric source that is connected with at least one party in above-mentioned lower electrode or the above-mentioned upper electrode; Support at least one party in above-mentioned lower electrode or the above-mentioned upper electrode across insulation division, and with the ground connection substrate of the wall configured separate of above-mentioned accepting container; With the short board of the wall short circuit that makes this ground connection substrate and above-mentioned accepting container, wherein, between the wall of above-mentioned short board and above-mentioned accepting container, be inserted with capacitor, this capacitor is arranged on the wall of above-mentioned accepting container.
The plasma processing apparatus of a second aspect of the present invention is characterized in that, in the plasma processing apparatus of first aspect, is X at the condensive reactance of above-mentioned capacitor
C, the inductive reactance of above-mentioned short board is X
LSituation under, X
C=-X
L/ 2 set up.
The plasma processing apparatus of a third aspect of the present invention, it is characterized in that, in the plasma processing apparatus of first aspect or second aspect, above-mentioned capacitor is made of two electric conductors of insulating barrier and this insulating barrier of clamping, above-mentioned insulating barrier be selected from potsherd, spraying plating ceramic layer and the fluororesin layer a kind of.
The plasma processing apparatus of a fourth aspect of the present invention, it is characterized in that, in the plasma processing apparatus of first aspect, between above-mentioned short board and above-mentioned ground connection substrate, be inserted with another capacitor, this another capacitor is arranged on above-mentioned being connected on the substrate, electrostatic capacitance at above-mentioned capacitor is C1, the self-inductance of above-mentioned short board is L, the electrostatic capacitance of above-mentioned another capacitor is C2, the frequency of the High frequency power that above-mentioned high frequency electric source is supplied with is f, angular frequency is in the situation of 2 π f, C1=C2=2/ (ω
2* L) set up.
In order to achieve the above object, the plasma processing apparatus of a fifth aspect of the present invention is characterized in that, comprising: the accepting container of accommodating substrate; The lower electrode that be configured in this accepting container, conduct loads the mounting table of aforesaid substrate; Configuration relative with this lower electrode and in above-mentioned accepting container, supply with the upper electrode of processing gas; The high frequency electric source that is connected with at least one party in above-mentioned lower electrode or the above-mentioned upper electrode; Support at least one party in above-mentioned lower electrode or the above-mentioned upper electrode across insulation division, and with the ground connection substrate of the wall configured separate of above-mentioned accepting container; With the short board of the wall short circuit that makes this ground connection substrate and above-mentioned accepting container, wherein, above-mentioned short board is that the straight line conductor of rectangle consists of by the cross section, branches at least halfway two.
The plasma processing apparatus of a sixth aspect of the present invention is characterized in that, in the plasma processing apparatus aspect the 5th, is inserted with capacitor between the wall of above-mentioned short board and above-mentioned accepting container, and this capacitor is arranged on the wall of above-mentioned accepting container.
The plasma processing apparatus of a seventh aspect of the present invention is characterized in that, in the plasma processing apparatus aspect first aspect or the 5th, the wall of above-mentioned accepting container is the inwall of above-mentioned accepting container.
In order to achieve the above object, the short circuit current of the high-frequency current of a eighth aspect of the present invention, be the short circuit current of high-frequency current that makes the wall short circuit of ground connection substrate in the following plasma processing apparatus and accepting container, this plasma processing unit comprises: the accepting container of accommodating substrate; The lower electrode that be configured in this accepting container, conduct loads the mounting table of aforesaid substrate; Configuration relative with this lower electrode and in above-mentioned accepting container, supply with the upper electrode of processing gas; The high frequency electric source that is connected with at least one party in above-mentioned lower electrode or the above-mentioned upper electrode; With at least one party who supports across insulation division in above-mentioned lower electrode or the above-mentioned upper electrode, and the ground connection substrate with the wall configured separate of above-mentioned accepting container, this short circuit current is characterised in that to have: the short board that makes the wall short circuit of above-mentioned ground connection substrate and above-mentioned accepting container; And the capacitor between the wall of this short board and above-mentioned accepting container, this capacitor is arranged on the wall of above-mentioned accepting container.
In order to achieve the above object, the short circuit current of the high-frequency current of a ninth aspect of the present invention, be the short circuit current of high-frequency current that makes the wall short circuit of ground connection substrate in the following plasma processing apparatus and accepting container, this plasma processing unit comprises: the accepting container of accommodating substrate; The lower electrode that be configured in this accepting container, conduct loads the mounting table of aforesaid substrate; Configuration relative with this lower electrode and in above-mentioned accepting container, supply with the upper electrode of processing gas; The high frequency electric source that is connected with at least one party in above-mentioned lower electrode or the above-mentioned upper electrode; With at least one party who supports across insulation division in above-mentioned lower electrode or the above-mentioned upper electrode, and the ground connection substrate with the wall configured separate of above-mentioned accepting container, this short circuit current is characterised in that: the short board with the wall short circuit that makes above-mentioned ground connection substrate and above-mentioned accepting container, this short board is that the straight line conductor of rectangle consists of by the cross section, branches at least halfway two.
The plasma processing apparatus of a tenth aspect of the present invention is characterized in that, in the plasma processing apparatus aspect eight aspect or the 9th, the wall of above-mentioned accepting container is the inwall of above-mentioned accepting container.
Short circuit current according to the high-frequency current of the plasma processing apparatus of first aspect and eight aspect, because between the inwall of the short board of the inwall short circuit that makes ground connection substrate and accepting container and this accepting container, be inserted with capacitor, so can share potential difference between the inwall of ground connection substrate and accepting container by short board and capacitor.In addition, because capacitor is arranged on the inwall of accepting container, so in fact the potential difference between the inwall of ground connection substrate and accepting container is exactly the potential difference between ground connection substrate and the capacitor, this potential difference namely is the potential difference that short board is shared.Therefore, can reduce potential difference between the inwall of the ground connection substrate of at least one party in supporting lower electrode or the upper electrode and accepting container.
According to the plasma processing apparatus of second aspect, the condensive reactance X of capacitor
CInductive reactance X with short board
LSatisfy X
C=-X
L/ 2.When high-frequency current is I, the current potential V of the ground connection substrate in the situation of not inserting capacitor between the inwall of short board and this accepting container
1By
Expression, the current potential V of the ground connection substrate in the situation that is inserted with capacitor between the inwall of short board and this accepting container
2By
Expression.Herein, because X
C=-X
L/ 2 set up, so
That is, can make V
2Be V
11/2, can positively reduce the potential difference that short board is shared.In addition, because the potential difference that this moment, capacitor was shared also is V
11/2, so between ground connection substrate and the capacitor and the potential difference between the inwall of capacitor and accepting container all can suitably reduce, thus, can be suppressed between ground connection substrate and the capacitor, between the inwall of capacitor and accepting container, produce capacitance coupling plasma, paradoxical discharge.
Plasma processing apparatus according to fourth aspect, between short board and ground connection substrate, be inserted with another capacitor, this another capacitor is arranged on the ground connection substrate, when the electrostatic capacitance of capacitor is that the self-inductance of C1, short board is that the electrostatic capacitance of L, another capacitor is the frequency of C2 and High frequency power when being f, angular frequency (=2 π f) satisfies C1=C2=2/ (ω
2* L).When high-frequency current is I, is being inserted with capacitor between the inwall of short board and this accepting container and between short board and ground connection substrate, is being inserted with in the situation of another capacitor, when the condensive reactance of capacitor is X
C1, another capacitor condensive reactance be X
C2, short board the inductive reactance be X
LThe time, the current potential V of ground connection substrate
3By
Expression further launches, then current potential V
3By
Expression.Herein, because C1=C2=2/ is (ω
2* L) set up, so
That is be 0 because can make the current potential of ground connection substrate, so can prevent generation capacitance coupling plasma, paradoxical discharge near the ground connection substrate.
According to the short circuit current of the high-frequency current of the plasma processing apparatus of the 5th aspect and the 9th aspect, making the short board of the inwall short circuit of ground connection substrate and accepting container is that the straight line conductor of rectangle consists of by the cross section, branches at least halfway two.Although make short board branch can reduce the sectional area of each minute branch road, because the path of high-frequency current increases, the result can reduce the inductance of short board integral body.Thus, can reduce the current potential of ground connection substrate, thereby, the potential difference between the inwall of the ground connection substrate of at least one party in supporting lower electrode or the upper electrode and accepting container can be reduced.
Plasma processing apparatus according to the 6th aspect, because between the inwall of short board and accepting container, be inserted with capacitor, so can share potential difference between the inwall of ground connection substrate and accepting container by short board and capacitor, can reduce the potential difference between the inwall of ground connection substrate and accepting container.
Description of drawings
Fig. 1 is the sectional view of the structure of the summary plasma processing apparatus that represents the first execution mode of the present invention.
Fig. 2 is the sectional view of the structure of the summary plasma processing apparatus that represents the second execution mode of the present invention.
Fig. 3 is the front elevation of the short board of presentation graphs 2, and Fig. 3 (A) expression branches into two situation with short board, and Fig. 3 (B) expression branches into three situation with short board.
Fig. 4 be cross section that expression is made of metal be rectangle straight line conductor inductance value and this straight line conductor wide-figure of the relation of long ratio.
Fig. 5 is the sectional view of the structure of the summary plasma processing apparatus that represents the 3rd execution mode of the present invention.
Fig. 6 is the sectional view that summary represents the structure of existing plasma processing apparatus.
Symbol description
The G glass substrate
S processes the space
10,40,43 plasma processing apparatus
11 chambers
13 upper electrode plate
20 high frequency electric sources
22 upper portion insulating sections
23 lower electrode plates
25 bottom insulation divisions
26 ground connection substrates
36,41,44 short boards
37,45 capacitors
37a, 45a insulating barrier
41a divides branch road
Embodiment
Below, with reference to the description of drawings embodiments of the present invention.
The plasma processing apparatus of the first execution mode of the present invention at first, is described.
Fig. 1 is the sectional view of the structure of the summary plasma processing apparatus that represents present embodiment.This plasma processing unit consists of in the mode of implementing etch processes at the glass substrate of liquid crystal display (LCD) usefulness.
In Fig. 1, plasma processing apparatus 10 for example has the chamber 11 (accepting container) of accommodating on one side as the angle barrel shape of glass substrate (hereinafter to be referred as " the substrate ") G of the rectangle of about 1m.This chamber 11 is made of aluminium, and the inwall major part of chamber 11 is covered by alumite.
Dispose spray head 12 (upper electrode) at the top of chamber 11, this spray head 12 has the upper electrode plate 13 as the conductive plate of rectangle, and can load and unload the upper electrode base portion 14 that is consisted of by electric conductor of ground this upper electrode plate 13 of hanger bearing.Be provided with surge chamber 15 in the inside of upper electrode base portion 14, be connected with on this surge chamber 15 and process gas introduction tube 16.In addition, upper electrode plate 13 has in the connection surge chamber 15 and a plurality of gas orifices 17 in the chamber 11.Process gas introduction tube 16 and be connected with processed air supply apparatus (not shown), this processed air supply apparatus imports processing gas by processing gas introduction tube 16 to surge chamber 15.The processing gas that spray head 12 will import surge chamber 15 by gas orifice 17 is supplied to the space (hereinafter referred to as " processing space S ") between upper electrode plate 13 and the lower electrode plate 23 described later.Herein, because spray head 12 across upper portion insulating section 22 hanger bearings in the top of chamber 11, so spray head 12 relative chamber 11 abundant electricity float.
Dispose the lower electrode plate 23 that doubles as the rectangle of the mounting table of mounting substrate G in the bottom of chamber 11.This lower electrode plate 23 is relative with upper electrode plate 13, and supports across the ground connection substrate 26 that bottom insulation division 25 is made of aluminium.In addition, ground connection substrate 26 is configured to leave from the bottom of chamber 11, by pillar 27 supportings cylindraceous.This pillar 27 is configured in and utilizes on the not shown driving mechanism support plate 28 that (direction of arrow among the figure) moves along the vertical direction.Thus, follow moving up and down of support plate 28, ground connection substrate 26, lower electrode plate 23 also move up and down.Support plate 28 is connected with the bottom of chamber 11 by bellows 29, this bellows 29 divide airtightly chamber 11 interior with chamber 11 outside.And pillar 27, support plate 28 and bellows 29 all are made of electric conductor.
In lower electrode plate 23, be provided with cooling flowing path (not shown), utilize the refrigerant that flows through this cooling flowing path to cool off the substrate G that is positioned on the lower electrode plate 23.Bottom insulation division 25 is made of dielectric, atmosphere, make lower electrode plate 23 from ground connection substrate 26 and chamber 11 fully electricity float.
Be connected with an end of the conductive path 30 that is arranged in the pillar 27 at lower electrode plate 23, insert on this conductive path 30 and be provided with impedance adjustment part 31.The other end of conductive path 30 is connected with bellows and is connected with the bottom of chamber 11 by support plate 28.In the present embodiment, upper electrode plate 13 and lower electrode plate 23 are equivalent to respectively negative electrode and anode.
Be connected with exhaust line 32 in the bottom of chamber 11, be connected with not shown exhaust apparatus in this exhaust line 32, for example, turbomolecular pump, dry pump.Exhaust apparatus is by carrying out exhaust in 32 pairs of chambers 11 of exhaust line.And, be provided with the gate valve 34 of the conveyance mouth 33 of switch substrate G at the sidewall of chamber 11.
In plasma processing apparatus 10, high-frequency current flows with the path of the plasma of high frequency electric source 20 → match circuit 18 → spray head 12 → processing space S → lower electrode plate 23 → impedance adjustment part 31 → chamber, 11 → matching box, 21 → ground connection, but because the high-frequency current that worry flows to short circuit to the wall section of chamber 11 by plasma from spray head 12, so adjust from lower electrode plate 23 to matching box the impedance of 21 path (return path) by impedance adjustment part 31, prevent the high-frequency current that flows through to short circuit to the wall section of chamber 11.
In addition, in plasma processing apparatus 10, by to processing space S supply high frequency electric power, produce high-frequency electric field, be activated at the processing gas of supplying with from spray head 12 in this processing space S, produce highdensity plasma, utilize this plasma to implement etch processes at substrate G.
The action of each structure member of plasma processing apparatus 10 is controlled according to the program corresponding with etch processes by the CPU of the included control part (not shown) of plasma processing apparatus 10.
And plasma processing apparatus 10 also has the short board 36 of the inwall short circuit that makes ground connection substrate 26 and chamber 11, and the capacitor 37 between the inwall of this short board 36 and chamber 11.Short board 36 is by conductive materials such as metals, and for example the cross section of stainless steel, the anti-corrosion Langaloy of haas troy (registered trade mark) formation is the lamellar conductor of rectangle.
One end of short board 36 is connected with the following of ground connection substrate 26 by connecting portion 38, and the inwall of the other end of short board 36 and chamber 11 particularly is connected with the capacitor 37 of the bottom that is arranged on chamber 11.
In this plasma processing unit 10, short board 36 and capacitor 37 consist of the short circuit current of short circuit between the inwall that makes ground connection substrate 26 and chamber 11.
In addition, in plasma processing apparatus 10, when between the inwall of ground connection substrate 26 and chamber 11, flowing through high-frequency current, because short board 36 has self-inductance, so produce the inductive reactance at short board 36, in addition, because capacitor 37 has electrostatic capacitance, so produce condensive reactance at capacitor 37.In addition, in plasma processing apparatus 10, because capacitor 37 is between the inwall of short board 36 and chamber 11, so short board 36 and capacitor 37 consist of series circuit between the inwall of ground connection substrate 26 and chamber 11.Thus, short board 36 and capacitor 37 can be shared the potential difference that produces when high-frequency current flows through between the inwall of ground connection substrate 26 and chamber 11.
Herein, when the inwall of chamber 11 be that the impedance of earthing potential, short board 36 is Z
L, capacitor 37 impedance be Z
C, when the high-frequency current that flows between the inwall of ground connection substrate 26 and chamber 11 is I, the current potential V of ground connection substrate 26
2Represented by following formula (1).
V
2＝(Z
L+Z
C)×I……(1)
Usually, Z
L, Z
CBy R+jX (X is reactance) expression, but in plasma processing apparatus 10, R compares very little with X, can ignore.Thus, in the present embodiment, when the inductive reactance of short board 36 is X
L, capacitor 37 condensive reactance be X
CThe time, the current potential V of ground connection substrate 26
2Represented by following formula (2).
In the present embodiment, can reduce current potential V by the electrostatic capacitance of adjusting capacitor 37
2Particularly, adjust the electrostatic capacitance of capacitor 37, so that following formula (3) is set up.
X
C＝-X
L/2……(3)
As a result, the current potential V of ground connection substrate 26
2Represented by following formula (4).
On the other hand, as existing plasma processing apparatus, at the inwall of ground connection substrate and chamber only in the situation by the short board short circuit, the current potential V of ground connection substrate
1Represented by following formula (5).
More above-mentioned formula (4) and above-mentioned formula (5), the current potential V of ground connection substrate 26
2Current potential V for the ground connection substrate of existing plasma processing apparatus
11/2.Therefore, make capacitor 37 between the inwall of short board 36 and chamber 11, by adjusting the electrostatic capacitance of capacitor 37, so that above-mentioned formula (3) is set up, can make the current potential V of ground connection substrate 26
2Become the current potential V of the ground connection substrate of existing plasma processing apparatus
11/2.
In addition, at this moment, the current potential V of capacitor 37
CRepresented by following formula (6).
, utilize above-mentioned formula (3) herein, the current potential V of capacitor 37
CRepresented by following formula (7).
Thus, the current potential V of capacitor 37
CAlso can become the current potential V of the ground connection substrate of existing plasma processing apparatus
11/2.That is, the potential difference shared of capacitor 37 also becomes V
11/2.
According to the plasma processing apparatus 10 of present embodiment, short board 36 and capacitor 37 can be shared the potential difference that produces when high-frequency current flows through between the inwall of ground connection substrate 26 and chamber 11.In addition, because capacitor 37 is arranged on the inwall of chamber 11, so the potential difference between the inwall of ground connection substrate 26 and chamber 11 is actually the potential difference between ground connection substrate 26 and the capacitor 37, this potential difference namely is the potential difference that short board 36 is shared.Thus, can reduce potential difference between the inwall of the ground connection substrate 26 of supporting lower electrode plate 23 and chamber 11.
In above-mentioned plasma processing apparatus 10, by adjusting the electrostatic capacitance of capacitor 37, can make X
C=-X
LSet up/2 (above-mentioned formula (3)), so the current potential V of ground connection substrate 26
2Be expressed as
(above-mentioned formula (4)).On the other hand, the current potential V of the ground connection substrate of existing plasma processing apparatus
1Be expressed as
(above-mentioned formula (5)).That is, can make V
2Be V
11/2, can positively reduce the potential difference that short board 36 is shared.
In addition, because the potential difference that capacitor 37 is shared also is V
11/2, so between ground connection substrate 26 and the capacitor 37 and the potential difference between the inwall of capacitor 37 and chamber 11 all can suitably reduce, thus, can be suppressed at the capacitance coupling plasma between ground connection substrate 26 and the capacitor 37, between the inwall of capacitor 37 and chamber 11, the generation of paradoxical discharge.
In above-mentioned plasma processing apparatus 10, by adjusting the electrostatic capacitance of capacitor 37, make the current potential V of ground connection substrate 26
2Become the current potential V of the ground connection substrate of existing plasma processing apparatus
11/2, but also can be by adjusting the electrostatic capacitance of capacitor 37, the potential difference that short board 36 is shared changes, and makes the current potential V of ground connection substrate 26
2Be roughly 0.
Then, the plasma processing apparatus of the second execution mode of the present invention described.
The structure of present embodiment, effect and above-mentioned the first execution mode are basic identical, only the structure at the short circuit current of the wall short circuit that makes ground connection substrate 26 and chamber 11 exists different, therefore omit the structure that repeats, the explanation of effect, below carry out different structures, the explanation of effect.
Fig. 2 is the sectional view of the structure of the summary plasma processing apparatus that represents present embodiment.
In Fig. 2, plasma processing apparatus 40 has the short board 41 of the inwall short circuit that makes ground connection substrate 26 and chamber 11.Short board 41 also is by conductive materials such as metals, and for example the cross section of stainless steel, the anti-corrosion Langaloy of haas troy (registered trade mark) formation is the lamellar conductor of rectangle.
One end of short board 41 is connected with ground connection substrate 26 by connecting portion 38, and the other end of short board 41 is connected with the inwall of chamber 11 by connecting portion 42.In this plasma processing unit 40, short board 41 consists of the short circuit current of short circuit between the inwall that makes ground connection substrate 26 and chamber 11.
Fig. 3 is the front elevation of the short board of presentation graphs 2, and Fig. 3 (A) expression branches into two situation with short board, and Fig. 3 (B) expression branches into three situation with short board.
Usually, the cross section that is made of metal is the inductance L of the straight line conductor of rectangle, and when the length of this straight line conductor is a (cm), width is b (cm), when thickness is c (cm), represents with following formula (8).
L＝0.002a×[2.303×log{2a/(b+c)}+0.5+0.2235×(b+c)/a]……(8)
Herein, when b 〉=c, above-mentioned formula (8) is expressed as following formula (8) '.
At this moment, when above-mentioned formula (8) ' in the value of L be A, straight line conductor wide-long than for b/a the time, the relation of this A and b/a is as shown in Figure 4.In Fig. 4, that transverse axis represents is wide-long than b/a, the longitudinal axis represent take wide-long than b/a as 0.5 o'clock A as 1, make the standardized A in-long A standardized situation more corresponding than b/a wide with each.
By relation shown in Figure 4 as can be known, even wide-as long to reduce half to 0.25 (namely than b/a from 0.5, the width of straight line conductor reduces by half), A as the value of inductance L also only becomes about 1.3 times, even b/a reduces to 0.1 from 0.5, namely reduce to 1/5 (that is, width is reduced to 1/5), A also only becomes about 1.8 times.
On the other hand, in the short board 41 of two branches shown in Fig. 3 (A), take the length (effective length) of removing the part that is connected with connecting portion 38,42 as 1, when the width of each minute branch road 41a is w, in this short board 41, two minutes branch road 41a of width w and length 1 configuration in parallel.At this moment, the inductance in short board 41 integral body is L
All, minute branch road 41a inductance be L
DivThe time, following formula (9) is set up.
1/L
all＝1/L
div+1/L
div……(9)
So by above-mentioned formula (9) as can be known, the inductance of short board 41 integral body becomes minute half of the inductance of branch road 41a.
That is, when making short board 41 branch, the inductance of a minute branch road 41a increases, but because branch road 41a configuration in parallel in two minutes in short board 41, so can increase the path of high-frequency current, the result can make the inductance of short board 41 integral body descend.
And shown in Fig. 3 (B), short board 41 also can branch into three.That is, the number of minute branch road of short board 41 and unrestricted.
According to the plasma processing apparatus 40 of present embodiment, be that the short board 41 that the straight line conductor of rectangle consists of branches into two halfway at least by the cross section.If make short board 41 branches, then the result can reduce the inductance of short board 41 integral body.Thus, the current potential of ground connection substrate 26 is descended, can reduce the potential difference between the inwall of the ground connection substrate 26 of supporting lower electrode plate 23 and chamber 11.
The plasma processing apparatus of the 3rd execution mode of the present invention then, is described.
The structure of present embodiment, effect and above-mentioned the first execution mode are basic identical, only the structure at the short circuit current of the wall short circuit that makes ground connection substrate 26 and chamber 11 exists different, therefore omit the structure that repeats, the explanation of effect, below carry out different structures, the explanation of effect.
Fig. 5 is the sectional view of the structure of the summary plasma processing apparatus that represents present embodiment.
In Fig. 5, plasma processing apparatus 43 comprises the short board 44 of the inwall short circuit that makes ground connection substrate 26 and chamber 11.Short board 44 also is by conductive materials such as metals, and for example the cross section of stainless steel, the anti-corrosion Langaloy of haas troy (registered trade mark) formation is the lamellar conductor of rectangle.
One end of short board 44 is connected with the following capacitor 45 that is arranged on ground connection substrate 26 (another capacitor), and the other end of short board 44 is connected with the capacitor 37 of the bottom that is arranged on chamber 11.The structure of capacitor 45 is identical with the structure of capacitor 37.
In this plasma processing unit 43, capacitor 45, short board 44 and capacitor 37 consist of the short circuit current of short circuit between the inwall that makes ground connection substrate 26 and chamber 11.In addition, in plasma processing apparatus 43, because capacitor 37 is between the inwall of short board 44 and chamber 11, capacitor 45 is between short board 44 and ground connection substrate 26, so capacitor 45, short board 44 and capacitor 37 consist of series circuit between the inwall of ground connection substrate 26 and chamber 11.
In the present embodiment, make the current potential V of ground connection substrate 26 by adjusting capacitor 37,45 electrostatic capacitance
3Be 0.Particularly, be that the self-inductance of C1, short board 44 is that the electrostatic capacitance of L, capacitor 45 is that the frequency of the High frequency power supplied with of C2, high frequency electric source 20 is that the angular frequency of f, High frequency power is in the situation of 2 π f in the electrostatic capacitance of capacitor 37, adjust capacitor 37,45 electrostatic capacitance C1, C2, following formula (10) is set up.
C1＝C2＝2/(ω
2×L)……(10)
Herein, the condensive reactance when capacitor 37 is X
C1, capacitor 45 condensive reactance be X
C2, short board 44 the inductive reactance be X
LThe time, the current potential V of ground connection substrate 26
3Represented by following formula (11).
Herein, according to above-mentioned formula (10), the current potential V of ground connection substrate 26
3Be expressed as following formula (12).
That is, the current potential V of ground connection substrate 26
3 Be 0.
In addition, at this moment, the current potential V of capacitor 45
C2Be expressed as following formula (13).
Herein, according to above-mentioned formula (10), the current potential V of capacitor 45
C2Be expressed as following formula (14).
On the other hand, according to above-mentioned formula (10), the current potential V of the ground connection substrate of the existing plasma processing apparatus shown in the above-mentioned formula (5)
1Be expressed as following formula (15).
Thus, in the present embodiment, can make the current potential V of capacitor 45
C2Become the current potential V of the ground connection substrate of existing plasma processing apparatus
11/2.
In addition, the current potential V of capacitor 37
C1Represented by following formula (16).
Herein, according to above-mentioned formula (10), the current potential V of capacitor 45
C1Be expressed as following formula (17).
Thus, in the present embodiment, also can make the current potential V of capacitor 37
C1Become the current potential V of the ground connection substrate of existing plasma processing apparatus
11/2.
According to the plasma processing apparatus 43 of present embodiment, except capacitor 37, capacitor 45 is between short board 44 and ground connection substrate 26, and this capacitor 45 is arranged on the ground connection substrate 26.In addition, because by adjusting capacitor 37,45 electrostatic capacitance C1, C2, make C1=C2=2/ (ω
2* L) (above-mentioned formula (10)) establishment is so can make
The current potential V of the ground connection substrate 26 shown in (above-mentioned formula (11))
3Be 0.Thus, can prevent generation capacitance coupling plasma, paradoxical discharge near ground connection substrate 26.
In addition, because can make the current potential V of capacitor 45
C2Current potential V with capacitor 37
C1Become the current potential V of the ground connection substrate of existing plasma processing apparatus
11/2, so between ground connection substrate 26 and the capacitor 45 and the potential difference between the inwall of capacitor 37 and chamber 11 all can suitably reduce, thus, can be suppressed between ground connection substrate 26 and the capacitor 45, the capacitance coupling plasma between the inwall of capacitor 37 and chamber 11, the generation of paradoxical discharge.
Also can be with the respective embodiments described above applied in any combination in plasma processing apparatus.For example, in plasma processing apparatus 10, replace short board 36, can use the short board 41 of two branches, in addition, in plasma processing apparatus 43, replace short board 44, also can use short board 41.
The plasma processing apparatus of the respective embodiments described above has impedance adjustment part 31, is not limited thereto but can use plasma processing apparatus of the present invention, and for example, also can be the plasma processing apparatus that does not need the impedance adjustment part.
In the plasma processing apparatus of the respective embodiments described above, be connected with high frequency electric source 20 on the upper electrode plate 13 of spray head 12, be not limited thereto but can use plasma processing apparatus of the present invention.For example, also can be the plasma processing apparatus that only is connected with high frequency electric source at lower electrode plate 23, perhaps, also can be the plasma processing apparatus that on upper electrode plate 13 and lower electrode plate 23, is connected with respectively high frequency electric source.
In addition, in the plasma processing apparatus of the respective embodiments described above, has the ground connection substrate 26 across bottom insulation division 25 supporting lower electrode plates 23, with the short board of the inwall short circuit that makes this ground connection substrate 26 and chamber 11, be not limited thereto but can use plasma processing apparatus of the present invention.For example, also can be the ground connection substrate that possesses across upper portion insulating section supporting upper electrode plate and be configured to leave the inwall of chamber 11, and the plasma processing apparatus of short board that makes the inwall short circuit of this ground connection substrate and chamber.
Claims (5)
1. a plasma processing apparatus is characterized in that, comprising:
Accommodate the accepting container of substrate; The lower electrode that be configured in this accepting container, conduct loads the mounting table of described substrate; Configuration relative with this lower electrode and in described accepting container, supply with the upper electrode of processing gas; The high frequency electric source that is connected with at least one party in described lower electrode or the described upper electrode; Support at least one party in described lower electrode or the described upper electrode across insulation division, and with the ground connection substrate of the wall configured separate of described accepting container; With the short board of the wall short circuit that makes this ground connection substrate and described accepting container, wherein,
Described short board is that the straight line conductor of rectangle consists of by the cross section, branches at least halfway two.
2. plasma processing apparatus as claimed in claim 1 is characterized in that:
The wall of described accepting container is the inwall of described accepting container.
3. short circuit current is the short circuit current of high-frequency current that makes the wall short circuit of ground connection substrate in the plasma processing apparatus and accepting container, and this plasma processing unit comprises: the accepting container of accommodating substrate; The lower electrode that be configured in this accepting container, conduct loads the mounting table of described substrate; Configuration relative with this lower electrode and in described accepting container, supply with the upper electrode of processing gas; The high frequency electric source that is connected with at least one party in described lower electrode or the described upper electrode; With at least one party who supports across insulation division in described lower electrode or the described upper electrode, and with the ground connection substrate of the wall configured separate of described accepting container,
This short circuit current is characterised in that, comprising:
Make the short board of the wall short circuit of described ground connection substrate and described accepting container; And the capacitor between the wall of this short board and described accepting container,
This capacitor is arranged on the wall of described accepting container, and is arranged on the two ends of described short board.
4. short circuit current is the short circuit current of high-frequency current that makes the wall short circuit of ground connection substrate in the plasma processing apparatus and accepting container, and this plasma processing unit comprises: the accepting container of accommodating substrate; The lower electrode that be configured in this accepting container, conduct loads the mounting table of described substrate; Configuration relative with this lower electrode and in described accepting container, supply with the upper electrode of processing gas; The high frequency electric source that is connected with at least one party in described lower electrode or the described upper electrode; With at least one party who supports across insulation division in described lower electrode or the described upper electrode, and with the ground connection substrate of the wall configured separate of described accepting container,
This short circuit current is characterised in that:
The short board that comprises the wall short circuit that makes described ground connection substrate and described accepting container,
This short board is that the straight line conductor of rectangle consists of by the cross section, branches at least halfway two.
5. such as claim 3 or 4 described short circuit currents, it is characterized in that:
The wall of described accepting container is the inwall of described accepting container.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-108421 | 2007-04-17 | ||
| JP2007108421A JP4887202B2 (en) | 2007-04-17 | 2007-04-17 | Plasma processing apparatus and high-frequency current short circuit |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810091491XA Division CN101290869B (en) | 2007-04-17 | 2008-04-17 | Plasma treatment apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN101882567A CN101882567A (en) | 2010-11-10 |
| CN101882567B true CN101882567B (en) | 2013-05-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200810091491XA Expired - Fee Related CN101290869B (en) | 2007-04-17 | 2008-04-17 | Plasma treatment apparatus |
| CN2010102060653A Expired - Fee Related CN101882567B (en) | 2007-04-17 | 2008-04-17 | Plasma processing apparatus and high frequency short-circuit apparatus |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200810091491XA Expired - Fee Related CN101290869B (en) | 2007-04-17 | 2008-04-17 | Plasma treatment apparatus |
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| JP (1) | JP4887202B2 (en) |
| KR (1) | KR101002557B1 (en) |
| CN (2) | CN101290869B (en) |
| TW (1) | TW200913002A (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009099661A2 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | A protective coating for a plasma processing chamber part and a method of use |
| TWI495402B (en) * | 2008-10-09 | 2015-08-01 | Applied Materials Inc | Plasma processing chamber having rf return path |
| WO2010091205A2 (en) * | 2009-02-04 | 2010-08-12 | Applied Materials, Inc. | Ground return for plasma processes |
| JP5643528B2 (en) | 2009-03-30 | 2014-12-17 | 東京エレクトロン株式会社 | Substrate processing equipment |
| WO2011034335A2 (en) * | 2009-09-18 | 2011-03-24 | 주성엔지니어링(주) | Plasma-processing apparatus |
| JP5347868B2 (en) | 2009-09-24 | 2013-11-20 | 東京エレクトロン株式会社 | Mounting table structure and plasma deposition apparatus |
| KR101173293B1 (en) | 2009-12-31 | 2012-08-13 | 엘아이지에이디피 주식회사 | Device reducing energy-loss on wall portion in substrate processing apparatus |
| CN106884157B (en) * | 2011-03-04 | 2019-06-21 | 诺发系统公司 | Mixed type ceramic showerhead |
| JP5731715B1 (en) * | 2014-03-31 | 2015-06-10 | Ｓｐｐテクノロジーズ株式会社 | Plasma processing equipment |
| JP6455783B2 (en) * | 2015-03-11 | 2019-01-23 | Ｓｐｐテクノロジーズ株式会社 | High frequency power system and plasma processing apparatus equipped with the same |
| CN110730829A (en) * | 2017-06-01 | 2020-01-24 | 应用材料公司 | Prolonging service life of grounding belt in PECVD process chamber |
| CN111326387B (en) * | 2018-12-17 | 2023-04-21 | 中微半导体设备(上海)股份有限公司 | Capacitively coupled plasma etching equipment |
| CN111586957B (en) * | 2019-02-19 | 2021-05-04 | 大连理工大学 | Capacitive coupling plasma discharge device |
| JP7446335B2 (en) * | 2019-04-29 | 2024-03-08 | アプライド マテリアルズ インコーポレイテッド | Ground strap assembly |
| CN115341198B (en) * | 2022-07-05 | 2023-08-04 | 湖南红太阳光电科技有限公司 | Flat plate type PECVD equipment |
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| US6245202B1 (en) * | 1996-04-12 | 2001-06-12 | Hitachi, Ltd. | Plasma treatment device |
| CN1694229A (en) * | 2004-04-30 | 2005-11-09 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
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|---|---|---|---|---|
| US5314343A (en) * | 1993-06-30 | 1994-05-24 | Rosco, Inc. | Grounding strap |
| JPH1079350A (en) * | 1996-09-04 | 1998-03-24 | Kokusai Electric Co Ltd | Plasma processor |
| JP3710081B2 (en) * | 1997-11-30 | 2005-10-26 | アルプス電気株式会社 | Plasma processing equipment |
| JP3565311B2 (en) * | 1997-12-17 | 2004-09-15 | アルプス電気株式会社 | Plasma processing equipment |
| US6857387B1 (en) * | 2000-05-03 | 2005-02-22 | Applied Materials, Inc. | Multiple frequency plasma chamber with grounding capacitor at cathode |
| JP4672169B2 (en) * | 2001-04-05 | 2011-04-20 | キヤノンアネルバ株式会社 | Plasma processing equipment |
| JP4024053B2 (en) * | 2002-02-08 | 2007-12-19 | キヤノンアネルバ株式会社 | High frequency plasma processing method and high frequency plasma processing apparatus |
| US7534301B2 (en) * | 2004-09-21 | 2009-05-19 | Applied Materials, Inc. | RF grounding of cathode in process chamber |
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2007
- 2007-04-17 JP JP2007108421A patent/JP4887202B2/en not_active Expired - Fee Related
-
2008
- 2008-04-16 TW TW097113812A patent/TW200913002A/en unknown
- 2008-04-16 KR KR1020080035301A patent/KR101002557B1/en not_active IP Right Cessation
- 2008-04-17 CN CN200810091491XA patent/CN101290869B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6245202B1 (en) * | 1996-04-12 | 2001-06-12 | Hitachi, Ltd. | Plasma treatment device |
| CN1694229A (en) * | 2004-04-30 | 2005-11-09 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4887202B2 (en) | 2012-02-29 |
| CN101882567A (en) | 2010-11-10 |
| JP2007180596A (en) | 2007-07-12 |
| KR20080093904A (en) | 2008-10-22 |
| TW200913002A (en) | 2009-03-16 |
| CN101290869B (en) | 2010-08-11 |
| KR101002557B1 (en) | 2010-12-21 |
| CN101290869A (en) | 2008-10-22 |
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