CN100543944C - Plasma processing apparatus and method of plasma processing - Google Patents
Plasma processing apparatus and method of plasma processing Download PDFInfo
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- CN100543944C CN100543944C CNB2005100701271A CN200510070127A CN100543944C CN 100543944 C CN100543944 C CN 100543944C CN B2005100701271 A CNB2005100701271 A CN B2005100701271A CN 200510070127 A CN200510070127 A CN 200510070127A CN 100543944 C CN100543944 C CN 100543944C
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Abstract
The invention provides a kind of plasma processing apparatus and method of plasma processing, purpose is to be suppressed in the plasma processing apparatus of parallel flat formula between the wall portion of cathode electrode and container handling and produces plasma.Between lower electrode and container handling, be provided with the impedance adjustment part of capacitive component.The impedance adjustment part is the resistance value in the path till from the wall portion of upper electrode by plasma, lower electrode and container handling to the ground connection framework of match circuit, becomes littler than the resistance value till from the wall portion of upper electrode by plasma and container handling to the ground connection framework of described match circuit.By means of this, just can produce the high plasma of uniformity.
Description
Technical field
The present invention relates to make and handle gaseous plasmaization, substrate is implemented the plasma processing apparatus and the method for plasma processing of the processing of etching etc. by means of this plasma by means of High frequency power.
Background technology
In the manufacturing process of the flat plate panel of semiconductor device or liquid crystal indicator etc., for the so processed substrate of semiconductor wafer or glass substrate being implemented the PROCESS FOR TREATMENT of etch processes or film forming processing etc., will use the plasma processing apparatus of plasma-etching apparatus or plasma CVD film formation device etc.
Figure 17 is the plasma processing apparatus of the parallel flat formula in the past always used of expression.In this plasma processing unit, in the container handling 11 that for example constitutes by aluminium etc., dual-purpose is set does the upper electrode 12 of the gas shower head that constitutes gas supply part, simultaneously, also feasible and this upper electrode 12 is provided with the lower electrode 13 that dual-purpose is done the mounting table of substrate 10 in opposite directions like that in opposite directions.Upper electrode 12 is in electric fully suspended state by means of insulating material 14 for container handling 11, and is connected on the high frequency electric source 17 by match circuit (match circuit) 15 and constitutes cathode electrode.
The equivalent electric circuit of the conductive path of the high-frequency current in the plasma processing apparatus of Figure 17 can be represented as shown in Figure 18.In when, in container handling 11 plasma having taken place, 13 of upper electrode 12 and lower electrodes will be owing to will carry out the capacitance coupling, event just will become the wall portion → matching box 16 → ground wire for match circuit 15 → upper electrode 12 → plasma → lower electrode 13 → conductive path 18 → container handling 11 from the path of the high-frequency current of high frequency electric source 17.
Yet, the trend of the glass substrate that the flat plate panel of LCD etc. is used in as the substrate of process object is to maximize day by day, though the result becomes to handling for example big to a substrate that Japanese tatami is so big from now on, but, when following after this container handling 11 maximizes, the inductance composition of container handling 11 will increase, for this reason, coupling between upper electrode 12 and the lower electrode 13 weakens, and the possibility of plasma (be drawn as in Figure 18 and be the capacitance coupling) just occurred taking place between the wall portion of upper electrode 12 and container handling 11.When such plasma has taken place when, plasma in the container handling 11 just becomes to being partial to the plasma of periphery, consequently can occur just can not carrying out the high processing of inner evenness for substrate 10, or the inwall of container handling 11 or internal part sustain damage, the shortcoming that perhaps is easy to consume etc.
On the other hand, in patent documentation 1, though told about in order to control the disperse state of plasma, the technology of impedance adjustment circuit is set between lower electrode and ground wire, but this technology is such technology: adopt when film forming and change the way of the setting of impedance adjustment circuit when cleaning, obtain the plasma of the shape that adapts with separately technology, be not conceived to above-mentioned problem, do not tell about its solution yet.
[patent documentation 1] spy opens flat 11-31685 communique: paragraph 0014
Summary of the invention
The present invention finishes in such cases, purpose is to provide the generation of the plasma between the wall portion that can be suppressed at cathode electrode and container handling, makes it to produce the high plasma of uniformity substrate is carried out the plasma processing apparatus and the plasma state processing method of the high plasma treatment of inner evenness.
The present invention, be used in container handling, making the processing gaseous plasmaization by means of High frequency power, in the plasma processing apparatus of substrate being handled by means of this plasma, possess: in this container handling with this container handling insulation and the cathode electrode and the anode electrode that self are provided with in opposite directions; By match circuit the distolateral high frequency electric source that is connected on the above-mentioned cathode electrode of one; One is distolateral to be connected on the above-mentioned anode electrode, another distolateral being connected on the above-mentioned container handling of while, the impedance adjustment part that has capacitive component, it is characterized in that: substrate-placing is positioned at electrode top on the lower side within above-mentioned cathode electrode and the anode electrode, the impedance adjustment part, be to be used for its resistance value is adjusted into making and passing through plasma from cathode electrode, the resistance value of the wall portion of anode electrode and container handling till the ground connection framework of above-mentioned match circuit becomes to than the littler impedance adjustment part of resistance value till from the wall portion of cathode electrode by plasma and container handling to the ground connection framework of above-mentioned match circuit.
So-called ' cathode electrode and anode electrode and container handling insulation ' is for the electric fully meaning that suspends of container handling on the position of removing outside the impedance adjustment part.
In addition, below, also the path till from the wall portion of cathode electrode by plasma, anode electrode and container handling to the ground connection framework of above-mentioned match circuit, be called plasma and will become for substrate and be the path of direction uniformly.In addition, below also the path till from the wall portion of cathode electrode by plasma and container handling to the ground connection framework of above-mentioned match circuit is called the path that plasma density uprises for wall portion (plasma will become for substrate be uneven path) in other words.
In addition, invention in addition, be used in container handling, making the processing gaseous plasmaization by means of High frequency power, in the plasma processing apparatus of substrate being handled by means of this plasma, possess: in this container handling with this container handling insulation and the cathode electrode and the anode electrode that self are provided with in opposite directions; With by match circuit the distolateral high frequency electric source that is connected on the above-mentioned cathode electrode of one; One is distolateral to be connected on the above-mentioned anode electrode, another distolateral being connected on the above-mentioned container handling of while, the impedance adjustment part that has capacitive component, it is characterized in that: substrate-placing is positioned at electrode top on one side of below within above-mentioned cathode electrode and the anode electrode, the impedance adjustment part is to be used for the resistance value that its resistance value is adjusted into till making from the wall portion of cathode electrode by plasma, anode electrode and container handling to the ground connection framework of above-mentioned match circuit is become minimum impedance adjustment part.So-called ' resistance value till from the wall portion of cathode electrode by plasma, anode electrode and container handling to the ground connection framework of above-mentioned match circuit becomes minimum ', also comprise situation about becoming to substantially minimum, for example also comprise minimum value 2% with interior value.
Have, the present invention also can use for the formation that high frequency electric source has been connected to upper electrode and lower electrode both sides' 2 frequencies up and down again.In this case, the present invention, be used in container handling, making the processing gaseous plasmaization by means of High frequency power, in the plasma processing apparatus of substrate being handled by means of this plasma, possess: in this container handling with this container handling insulation and the upper electrode and the lower electrode that self are provided with in opposite directions; Distolateral first high frequency electric source that has been connected to the 10MHz～30MHz on the above-mentioned upper electrode by first match circuit of one; Distolateral second high frequency electric source that has been connected to the 2MHz～6MHz on the above-mentioned lower electrode by second match circuit of one; One is distolateral to be connected on the above-mentioned lower electrode, and another distolateral being connected on the above-mentioned container handling simultaneously has the first impedance adjustment part of capacitive component; Be connected on the above-mentioned upper electrode with one is distolateral, another distolateral being connected on the above-mentioned container handling of while, the second impedance adjustment part that has capacitive component, it is characterized in that: substrate-placing is arrived above-mentioned lower electrode top, the first impedance adjustment part, be to be used for its resistance value is adjusted into making and passing through plasma from above-mentioned upper electrode, resistance value under the frequency of first high frequency electric source of the wall portion of lower electrode and container handling till the ground connection framework of above-mentioned first match circuit, become to than the littler impedance adjustment part of resistance value under the frequency of first high frequency electric source till from the wall portion of upper electrode by plasma and container handling to the ground connection framework of above-mentioned first match circuit, the second impedance adjustment part, be to be used for its resistance value is adjusted into making and passing through plasma from above-mentioned lower electrode, resistance value under the frequency of second high frequency electric source of the wall portion of upper electrode and container handling till the ground connection framework of above-mentioned second match circuit becomes to than the littler impedance adjustment part of resistance value under the frequency of second high frequency electric source till from the wall portion of lower electrode by plasma and container handling to the ground connection framework of above-mentioned second match circuit.
In addition, the other invention of the formation of 2 frequencies up and down, be used in container handling, making the processing gaseous plasmaization by means of High frequency power, in the plasma processing apparatus of substrate being handled by means of this plasma, possess: in this container handling with this container handling insulation and the upper electrode and the lower electrode that self are provided with in opposite directions; Distolateral first high frequency electric source that has been connected to the 10MHz～30MHz on the above-mentioned upper electrode by first match circuit of one; Distolateral second high frequency electric source that has been connected to the 2MHz～6MHz on the above-mentioned lower electrode by second match circuit of one; One is distolateral to be connected on the above-mentioned lower electrode, and another distolateral being connected on the above-mentioned container handling simultaneously has the first impedance adjustment part of capacitive component; Be connected on the above-mentioned upper electrode with one is distolateral, another distolateral being connected on the above-mentioned container handling of while, the second impedance adjustment part that has capacitive component, it is characterized in that: substrate-placing is arrived above-mentioned lower electrode top, the first impedance adjustment part, be to be used for its resistance value is adjusted into making and passing through plasma from above-mentioned upper electrode, resistance value under the frequency of first high frequency electric source of the wall portion of lower electrode and container handling till the ground connection framework of above-mentioned first match circuit, become impedance adjustment part for minimum, the second impedance adjustment part, be to be used for its resistance value is adjusted into making and passing through plasma from lower electrode, resistance value under the frequency of second high frequency electric source of the wall portion of upper electrode and container handling till the ground connection framework of above-mentioned second match circuit becomes the impedance adjustment part for minimum.
Have, the present invention also can use for the formation that first and second high frequency electric sources has been connected to bottom 2 frequencies on the lower electrode again.In this case, the present invention, be used in container handling, making the processing gaseous plasmaization by means of High frequency power, in the plasma processing apparatus of substrate being handled by means of this plasma, possess: in this container handling with this container handling insulation and the upper electrode and the lower electrode that self are provided with in opposite directions; Distolateral first high frequency electric source that has been connected to the 10MHz～30MHz on the above-mentioned lower electrode by first match circuit of one; Distolateral second high frequency electric source that has been connected to the 2MHz～6MHz on the above-mentioned lower electrode by second match circuit of one; One is distolateral to be connected on the above-mentioned upper electrode, another distolateral being connected on the above-mentioned container handling of while, the first impedance adjustment part and the second impedance adjustment part that have capacitive component, it is characterized in that: substrate-placing is arrived above-mentioned lower electrode top, the first impedance adjustment part, be to be used for its resistance value is adjusted into making and passing through plasma from lower electrode, resistance value under the frequency of first high frequency electric source of the wall portion of upper electrode and container handling till the ground connection framework of above-mentioned first match circuit, become to than the littler impedance adjustment part of resistance value under the frequency of first high frequency electric source till from the wall portion of lower electrode by plasma and container handling to the ground connection framework of above-mentioned first match circuit, the second impedance adjustment part, be to be used for its resistance value is adjusted into making and passing through plasma from lower electrode, resistance value under the frequency of second high frequency electric source of the wall portion of upper electrode and container handling till the ground connection framework of above-mentioned second match circuit becomes to than the littler impedance adjustment part of resistance value under the frequency of second high frequency electric source till from the wall portion of lower electrode by plasma and container handling to the ground connection framework of above-mentioned second match circuit.
In addition, another invention in the formation of bottom 2 frequencies, be used in container handling, making the processing gaseous plasmaization by means of High frequency power, in the plasma processing apparatus of substrate being handled by means of this plasma, possess: in this container handling with this container handling insulation and the upper electrode and the lower electrode that self are provided with in opposite directions; Distolateral first high frequency electric source that has been connected to the 10MHz～30MHz on the above-mentioned lower electrode by first match circuit of one; Distolateral second high frequency electric source that has been connected to the 2MHz～6MHz on the above-mentioned lower electrode by second match circuit of one; One is distolateral to be connected on the above-mentioned upper electrode, another distolateral being connected on the above-mentioned container handling of while, the first impedance adjustment part and the second impedance adjustment part that have capacitive component, it is characterized in that: substrate-placing is arrived above-mentioned lower electrode top, the first impedance adjustment part, be to be used for its resistance value is adjusted into making and passing through plasma from above-mentioned lower electrode, the resistance value of the wall portion of upper electrode and container handling till the ground connection framework of above-mentioned first match circuit becomes the impedance adjustment part for minimum, the second impedance adjustment part is to be used for its resistance value is adjusted into making and passing through plasma from lower electrode, the resistance value of the wall portion of upper electrode and container handling till the ground connection framework of above-mentioned second match circuit becomes the impedance adjustment part for minimum.
In above-mentioned plasma processing apparatus, make plasma become to the uniform resistance value in the path of direction to become will being adjusted into its resistance value to being compared to path that wall portion plasma density increases (in other words for substrate, become path for the base plate plasma body for uneven direction) the littler situation of resistance value under, make plasma become to the uniform resistance value in the path of direction to become with being adjusted into its resistance value under any one the situation under the situation of minimum for substrate, the various piece of each plasma processing apparatus can be carried out control as described below.
In other words, be preferably, resistance value is set in each impedance adjustment part, makes when having changed the high-frequency electrical flow valuve that will flow to each frequency in the anode electrode at the resistance value of the high frequency of adjusting each frequency, can obtain the value of maximum more than 90% of this current value.As for another distolateral position that is connected on the container handling of impedance adjustment part, for example,, then be connected on the bottom of container handling and get final product if anode electrode is a lower electrode.If make this connecting portion be too near to cathode electrode, lost the meaning that the impedance adjustment part is set owing to being easy to that between cathode electrode and connecting portion plasma takes place, so be preferably connected to the anode electrode sustained height of container handling or the position that more preferably is connected to a side opposite of comparing (if anode electrode be lower electrode then be below one side, if anode electrode is upper electrode then is top one side) with anode electrode on.
The impedance adjustment part both can become and makes and to make the variable formation of resistance value with for example capacitance variable capacitor.Also can be with for example formations such as for example dielectric flat board that present the capacitance composition between the inner face that are arranged on anode electrode and container handling.Can make in the impedance adjustment part under the situation of impedance variable, also can become and storage is set makes the adjusted value of the kind of plasma treatment and impedance adjustment part (in the invention that the first and second impedance adjustment parts will be set, be the adjusted value of the first impedance adjustment part and the adjusted value of the second impedance adjustment part) data that are mapped, read the impedance adjusted value output corresponding and be used for the formation of control part of control signal that the impedance adjustment part is adjusted with the kind of selected plasma treatment.
In the present invention, preferably become such formation: use a plurality of impedances adjustment part, each impedance adjustment part one distolateral is connected on position of coming separated from one another on the length direction of anode electrode.In addition, in the invention of 2 frequencies up and down, become and be such formation: use a plurality of first impedance adjustment parts, each impedance adjustment part one distolateral, be connected on position of coming separated from one another on the length direction of lower electrode, use a plurality of second impedance adjustment parts, each impedance adjustment part one distolateral is connected on position of coming separated from one another on the length direction of upper electrode.In addition, in the invention of the formation of bottom 2 frequencies, then become and be such formation: use a plurality of first impedance adjustment parts, each impedance adjustment part one distolateral, be connected on position of coming separated from one another on the length direction of lower electrode, use a plurality of second impedance adjustment parts, each impedance adjustment part one distolateral is connected on position of coming separated from one another on the length direction of lower electrode.
As mentioned above, the invention of a plurality of impedances adjustment part is set, at the area of treatment substrate at 1m
2Under the situation of above for example rectangular substrate is suitable, in addition, is specially suitable in the aggregate value that will use High frequency power in device under as the situation more than the 10kW.
If employing the present invention then can be suppressed at the generation of plasma between the wall portion of cathode electrode and container handling, make it to produce the high plasma of uniformity and substrate is carried out the high plasma treatment of inner evenness.
Description of drawings
Fig. 1 is the vertical profile end view of the summary that constitutes of the integral body of the plasma processing apparatus of expression embodiments of the present invention 1.
Fig. 2 is the circuit diagram of the equivalent electric circuit of the above-mentioned execution mode of expression.
Fig. 3 A is a pie graph of representing an example of the impedance adjustment part of using in the above-described embodiment.
Fig. 3 B is a pie graph of representing another example of the impedance adjustment part of using in the above-described embodiment.
Fig. 3 C is a pie graph of representing another example of the impedance adjustment part of using in the above-described embodiment.
Fig. 3 D is a pie graph of representing another example of the impedance adjustment part of using in the above-described embodiment.
Fig. 3 E is a pie graph of representing another example of the impedance adjustment part of using in the above-described embodiment.
Fig. 4 is the pie graph of an example of the above-mentioned execution mode of expression.
Fig. 5 A is the vertical profile end view of the summary that constitutes of the integral body of plasma processing apparatus of the variation of the above-mentioned execution mode of expression.
Fig. 5 B is the state after expression separates the substrate of above-mentioned execution mode.
Fig. 6 is the circuit diagram of equivalent electric circuit of the execution mode of presentation graphs 5A.
Fig. 7 A is the vertical profile end view of the summary that constitutes of the integral body of plasma processing apparatus of the variation of the above-mentioned execution mode of expression.
Fig. 7 B is the vertical profile end view of the summary that constitutes of the integral body of plasma processing apparatus of the variation of the above-mentioned execution mode of expression.
Fig. 7 C is the vertical profile end view of the summary that constitutes of the integral body of plasma processing apparatus of the variation of the above-mentioned execution mode of expression.
Fig. 8 is the vertical profile end view of the summary that constitutes of the integral body of plasma processing apparatus of the variation of the above-mentioned execution mode of expression.
Fig. 9 is the vertical profile end view of the summary that constitutes of the integral body of the plasma processing apparatus of expression embodiments of the present invention 2.
Figure 10 is the vertical profile end view of the summary that constitutes of the integral body of the plasma processing apparatus of expression embodiments of the present invention 3.
Figure 11 is the key diagram that the position that position and substrate top are set (point) of impedance adjustment part is represented accordingly.
Figure 12 is the circuit diagram that is illustrated in the circuit of the impedance adjustment part of using in the experiment of the effect that is used for confirming each execution mode of the present invention.
Figure 13 is the key diagram of data of the integral body of the above-mentioned experimental result of expression.
Figure 14 is that expression is as the adjustment position of the impedance adjustment part of an above-mentioned experimental result and the key diagram of the relation between the high-frequency current.
Figure 15 is that expression is as the adjustment position of the impedance adjustment part of an above-mentioned experimental result and the key diagram of the relation between the high-frequency current.
Figure 16 is expression as the performance plot of the inner evenness of the etch-rate of the silicon of the substrate top of another experimental result and etch-rate.
Figure 17 is the vertical profile end view of the summary that constitutes of the integral body of the existing plasma processing apparatus of expression.
Figure 18 is the circuit diagram of the equivalent electric circuit of expression conventional example.
Embodiment
(execution mode 1)
Execution mode to the device that the plasma processing apparatus of embodiments of the present invention 1 is applied to the glass substrate that the etching solution crystal display uses describes.In Fig. 1, the 2nd, for example carried out the cubic tubular processing container that the aluminium of anodized constitutes by the surface.Top at this container handling 2, be provided with dual-purpose and do this upper electrode 3 as the gas shower head of gas supply part, this upper electrode 3 becomes to for container handling 2 electricity the state of getting up that suspends fully by means of the insulating material 31 of the edge of opening setting of the peristome above container handling 2 30.In addition, this constitutes as the gas shower head of upper electrode 3: to be connected to by gas supply part 32 handle on the gas supply part 33 in, from a plurality of pores 34 from gas supply part 32 gas supplied in container handling 2.
Above-mentioned upper electrode 3 is connected on the high frequency electric source 4 by match circuit 41 and conductive path 40.In addition, matching box 42 has been arranged so that the above-mentioned peristome 30 of container handling 2 is fenced up, wherein has been surrounded by match circuit 41.Extend as the outer portion 43 that constitutes coaxial cable 44 with above-mentioned conductive path 40 on the top of this matching box 42, and this skin portion 43 is ground connection.In this example, matching box 42 is equivalent to the ground connection framework of match circuit.
On the bottom of container handling 2, be provided with the lower electrode 5 that dual-purpose is done the mounting table of mounting substrate 10, this lower electrode 5 supports on the support portion 51 by insulating material 50.Therefore, lower electrode 5 just become for container handling 2 state that suspends of electricity fully.On the middle body below support portion 51, be provided with the protection tube 52 that peristome 20 that perforation forms extends downwards on the diapire of container handling 2.Below this protection tube 52, supported by the supporting bracket 53 of the diameter conductivity bigger and stopping up in managing than the diameter of this protection tube 52.The lower end of the bellows body 54 of conductivity is fixed on the periphery of this supporting bracket 53, and simultaneously, the upper end of this bellows body 54 then is fixed on the edge of opening of above-mentioned peristome 20 of container handling 2.Bellows body 54 just becomes inner space and the atmosphere one side space that disposes protection tube 52 for being divided into airtightly, simultaneously, can also make mounting table 5 liftings by supporting bracket 53 by means of not shown elevating mechanism.
An end that is arranged on the conductive path 55 in the protection tube 51 is connected on the lower electrode 5, and this conductive path 55 is provided with impedance adjustment part 6.Another of above-mentioned conductive path 55 is distolateral, then has been connected on the bottom of container handling 2 by supporting bracket 53 and bellows body 54.Near the position of the upper electrode 3 of this container handling 2 for example above, as mentioned above, via matching box 42 and outer portion 43 ground connection by above-mentioned coaxial cable 44.In this example, upper electrode 3 and lower electrode 5 are equivalent to cathode electrode and anode electrode respectively.
In addition, exhaust line 21 is connected on the sidewall of container handling 2, vacuum exhaust unit 22 has been connected on this exhaust line 21.In addition, on the sidewall of container handling 2, also be provided with the gate valve 24 of the carrying port 23 that is used for opening and closing substrate 10.
Owing to aforesaid formation, though becoming, the result is the path flow of high-frequency current with the outer portion 43 → ground wire of high frequency electric source 4 → match circuit 41 → upper electrode 3 → plasma → lower electrode 5 → impedance adjustment part 6 → container handling, 2 → matching box, 42 → coaxial cable 44, but, just as background technology is described in that, owing to exist the mystery that high-frequency current flows to the wall portion of container handling 2 by plasma from upper electrode 3, adjust so will become the impedance that makes by means of the path (return path) till 6 pairs of tops, impedance adjustment part from lower electrode 5 to processing container 2.
Fig. 2 is to the equivalent electric circuit of high-frequency current in the plasma processing apparatus of Fig. 1.Container handling 2 is owing to regarding the inductance composition as, so can represent with inductance.C1 is drawn as electric capacity into the capacitance composition to the plasma of 5 of upper electrode 3 and lower electrodes, and C2 is drawn as electric capacity into the capacitance composition to the plasma between the wall portion of upper electrode 3 and container handling 2.
In addition, the purpose of present embodiment be to adopt the capacitance (C1) that makes plasma and from lower electrode 5 to the top of handling container 2 till the way that cancels each other out of the capacitance composition (C) of inductance (L) and impedance adjustment part 6 in path, the impedance in above-mentioned path is become for j (1/ ω C1+ ω L-1/ ω C), we can say the wall portion that comprises upper electrode 3 → plasma → container handling 2, make that the impedance that becomes the path that plasma density uprises for being compared to wall portion is littler.For this reason, impedance adjustment part 6 just comprises the capacitance composition, as its form, for example, can adopt following formation: make electricity capacity variable capacitor 61 as shown in Figure 3A, capacitor 62 the fixed capacity amount shown in Fig. 3 B combines with capacitance variable capacitor 61, shown in Fig. 3 C, use the capacitor 62 of fixed capacity amount, shown in Fig. 3 D, capacitance variable capacitor 61 and inductor 63 are combined, shown in Fig. 3 E, use the inductor 64 and the fixed capacity amount capacitor 62 that can change inductance.Even if only use under the situation of fixed capacity amount capacitor 62, the way that also can adopt the capacitor different with capacitance to exchange is adjusted resistance value.
When reducing plasma and become impedance for the uniform path of direction for above-mentioned substrate, ask value of current flowing in this path though it is desirable to the resistance value of impedance adjustment part 6 to be carried out all changes according to experimental example described later, and be set at and make it to become maximum, promptly be set at and make plasma become to the impedance in the path of direction uniformly becomes to be minimum for substrate, but in fact preferably in peaked 2% of electric current, preferably be set at become at least electric current peaked 10% in.
Action effect to such execution mode describes.At first, open the not shown carrying arm of gate valve 24 usefulness and handle in the container 2 moving in the never illustrated load locking room of substrate 10, the co-operating of adopting and connecting between the not shown lifter pin in the lower electrode 5 is handed to lower electrode 5 tops to substrate 10.Then, closing gate valve 24 is supplied with processing gas from handling gas supply part 33 by upper electrode 3 in container handling 2, simultaneously, adopt the way of carrying out vacuum exhaust by means of vacuum exhaust unit 22, makes the pressure of keeping regulation in the container handling 2.Then, for example applying between upper electrode 3 and lower electrode 5 from high frequency electric source 4 employings, the way energized process gas of the High frequency power of 10MHz～30MHz, 10kW produces plasma.For example can use by the gas that contains halogen gas, oxygen and the argon gas etc. that constitute of halogen compounds for example as handling gas.
Generation owing to plasma, though high-frequency current will we can say that plasma becomes for substrate in the stream for direction uniformly and flow at the outer portion 43 → ground wire of upper electrode 3 → plasma → lower electrode 5 → impedance adjustment part 6 → container handling, 2 → matching box, 42 → coaxial cable 44, but, at this moment owing to be set at and make the resistance value in this path become to be minimum value roughly, and make littler than the resistance value of outer portion 43 → ground thread path of upper electrode 3 → plasma → container handling 2 → matching box 42 → coaxial cable 44, so plasma just becomes and is difficult to existence between the wall portion of upper electrode 3 and container handling 2.Consequently plasma concentrates between upper electrode 3 and the lower electrode 5, and the plasma of substrate 10 tops just becomes and is the high plasma of inner evenness.Though for example etch processes can be carried out by means of this plasma in the surface of substrate 10, because the inner evenness height of plasma, so therefore the inner evenness height of etching speed, can carry out uniform etching in face.In addition, can also suppress the damage or the consumption of the inwall or the internal part of container handling 2.
In addition, present embodiment also can become such formation: as shown in Figure 4, to each treatment types, all the appropriate adjusted value in the impedance adjustment part 6 being made into table stores in advance in the storage part of control part 7, when having selected treatment types, just from data are for example shown, read the above-mentioned appropriate adjusted value corresponding with this processing, from control part 7 to the actuator of the driving impedance adjustment part 6 motor output control signal of the micro-adjusting mechanism of capacitance variable capacitor for example.As the example under this situation, can enumerate under the situation of the etch processes that will differ from one another continuously the example that each etch processes is predetermined above-mentioned appropriate set point, perhaps, to carry out under the situation of continuous film forming technology, each film forming handled the example that all is predetermined above-mentioned appropriate set point etc.
If employing present embodiment, be applied with High frequency power between cathode electrode and anode electrode and make it to take place plasma so that substrate is handled owing to become giving, the impedance adjustment part that comprises the capacitance composition is set between anode electrode (become be anode electrode with the electrode that is connected high frequency electric source electrode in opposite directions) and container handling, make and pass through plasma from cathode electrode, the wall portion of anode electrode and container handling arrives the resistance value till the ground connection framework of match circuit, littler than the resistance value till from the wall portion of cathode electrode by plasma and container handling to the ground connection framework of above-mentioned match circuit, so can be suppressed at the generation of plasma between the wall portion of cathode electrode and container handling, can make it to take place the high plasma of uniformity and carry out the high plasma treatment of inner evenness for substrate.
(variation of execution mode 1)
In the plasma processing apparatus of modified embodiment of the present embodiment, shown in Fig. 5 A and Fig. 5 B, be provided with a plurality of impedances adjustment part 6 for example 3 impedance adjustment part 6A, 6B, 6C.In the plasma processing apparatus of this variation, preferably to become the distolateral length direction (horizontal direction) that is connected respectively to lower electrode 5 of these impedance adjustment parts 6A, 6B, 6C is gone up on position PA, the PB that comes separated from one another, the PC.Roughly get on very well, for example shown in the chain line of Fig. 5 B like that, the substrate 10 of rectangle is divided into 3, on each cut section all and container handling 2 between resistance value be set at appropriate value.So-called this appropriate value can obtain the value of the high plasma of uniformity exactly, for example, can adopt and carry out trial-and-error method repeatedly, each processing is all found in advance the adequate value of each impedance adjustment part 6A, 6B, 6C.
For the example of model utility more.For example, at plasma under the strong situation of centre, the capacitance value that will strengthen the impedance adjustment part 6B corresponding with central portion strengthens the resistance value between lower electrode 5 and container handling 2, and to reduce the impedance adjustment part 6A corresponding, the capacitance value of 6B with the peripheral part, just can make the strong part of plasma from the such adjustment of mediad periphery one side shifting by means of this.Promptly, in such execution mode, though its prerequisite is will be impedance adjustment part 6A, 6B, the resistance value separately of 6C is set at the feasible impedance adjustment part 6A that comprises, 6B, the resistance value of the connecting circuit arranged side by side of 6C becomes to littler than the resistance value in the path of increasing through the wall portion of upper electrode 3 → plasma → container handling 2 and to this wall portion plasma density interior becoming to the uniform resistance value in the path of direction for described base plate plasma body, but, each resistance value is further adjusted in employing when satisfying this condition way just can be adjusted the intensity of the plasma on the face direction of substrate 10 extremely meticulously, for this reason, under the situation of handling the big substrate of size, be otherwise effective technique extremely producing aspect the high plasma of uniformity.The inventor guarantees, size as this substrate, when the rectangular substrate of using for for example flat plate panel, when for example the area of substrate becomes to big large-scale substrate more than 1m2, since in face, make plasma become for the high state of uniformity be difficult, if, then just grasped and to have improved uniformity, can also suppress the technology of generation of the paradoxical discharge of locality so can adjust the distribution of plasma extremely meticulously.In addition, particularly in the aggregate value of this High frequency power greatly under the situation more than the 10kW owing to be easy to produce paradoxical discharge, be extremely effective so the formation of a plurality of impedances adjustment part is set.
Shown in Fig. 5 A and Fig. 5 B; when impedance adjustment part 6A, 6B, 6C are set; protection tube 52A～52C is being arranged so that when below support portion 51, extending respectively on the position corresponding with above-mentioned position PA, PB, PC; supporting bracket 53 all is set on each protection tube 52A～52C independently; again between each supporting bracket 53 and container handling 2; as illustrated in fig. 1, bellows body 54 is set.
When cutting apart the impedance adjustment region of such lower electrode 5, be not limited to be divided into 3 parts, for example also can become and make that carrying out 2 integral body such as branch such as grade on direction in length and breadth is divided into 4 parts, and on each cut section, the impedance adjustment part is set.
In addition, in such execution mode, preferred also is to store each adjusted value of each impedance adjustment part 6A, 6B, 6C in advance according to the storage part of kind in control part 7 of handling as shown in Figure 6, and according to selected processing, sets the resistance value of each impedance adjustment part 6A, 6B, 6C.
In addition, impedance adjustment part 6 shown in Fig. 7 A～7C, also can use the dielectric that constitutes the capacitance composition dull and stereotyped and do not make the capacitance element of electricity capacity variable capacitor or fixed capacity amount capacitor etc.The example of Fig. 7 A is that it constitutes between the bottom of lower electrode 5 and container handling 2 exchange and is provided with freely by this as the dielectric dull and stereotyped 8 impedance adjustment parts that constitute.The capacitance value of this dielectric flat board 8 as mentioned above, has been set at the condition of the resistance value that satisfies the path.
Example shown in Fig. 7 B, it is the corresponding example of example with Fig. 5 A that uses a plurality of impedances adjustment part 6A, 6B, 6C, what use is that it constitutes the capacitance different example on middle body (for example seeing the zone of rectangle in the plane) and peripheral part (being seen as the zone of straight-flanked ring in the plane) that makes the dielectric flat board, that is, use is the example of 2 kinds dielectric dull and stereotyped 8A, 8B.Though this example becomes to capacitance in same at the thickness that makes the dielectric flat board and changes because of material, but, shown in Fig. 7 C, also can become and make the thickness that changes lower electrode 5 for example strengthen the thickness of middle body simultaneously, reduce the thickness of this regional dielectric flat board 8, by means of this, on middle body and peripheral part, change capacitance.
In the above-described embodiment, though high frequency electric source 4 has been connected on upper electrode 3 these sides, also can be that high frequency electric source 4 is connected to formation on lower electrode 5 these sides.In this case, impedance adjustment part 6, the top that be connected to upper electrode 3 and container handling 2 for example above between.In this case, though also can be arranged on impedance adjustment part 6 between the side wall portion of upper electrode 3 and container handling 2, it is not preferred being arranged on downside compared with upper electrode 3.In Fig. 8, in the device of such type, be the example that expression is provided with 3 impedance adjustment part 6A～6C.3 impedance adjustment part 6A～6C are provided with the position, though for example can become and the corresponding position of PA-PC shown in Fig. 5 A and Fig. 5 B,, the number of impedance adjustment part 6 both can be 2, also can be more than 4.Impedance adjustment part 6 both can be a plurality of as mentioned above, also can be 1.
If adopt this variation, as long as use a plurality of impedances adjustment part owing to become, and the locational formation that comes separated from one another on the distolateral length direction that is connected to anode electrode of each impedance adjustment part, the result just becomes to we can say that anode electrode is divided into a plurality of and each cut section is adjusted impedance on the face direction of substrate, so compare the distribution that to adjust plasma meticulously with the situation of carrying out the impedance adjustment in 1 place, for this reason, just can obtain the high plasma of uniformity.For example, if the area of substrate arrives 1m greatly
2Above large-scale substrate, owing to be difficult to make plasma to become at the high state of inner evenness, as long as, just can improve uniformity, even the generation of the paradoxical discharge of locality also can suppress so become the feasible distribution that can adjust plasma extremely meticulously.In addition, greatly under the situation more than the 10kW, owing to be easy to produce paradoxical discharge, the formation of a plurality of impedances of use adjustment part is extremely effective in the aggregate value of this High frequency power.
(execution mode 2)
In the present embodiment, to as shown in Figure 9, in upper electrode 3 sides high frequency electric source 4 is set, simultaneously, the plasma processing apparatus of 2 frequency type up and down that high frequency electric source 100 is set in lower electrode 5 sides describes.In this plasma processing unit; in the formation of Fig. 5 A; in the protection tube 52B of lower side, carry out the wiring of conductive path 101; lower end side at protection tube 52B is provided with matching box 102; simultaneously; in this matching box 102, the match circuit 103 that has been connected on the above-mentioned conductive path 101 is set, then high frequency electric source 100 is connected on the match circuit 103.The bottom of matching box 102 becomes to the outer portion 105 that constitutes coaxial cable 104 with conductive path 106 and extends, and this skin portion 105 is ground connection.
In this example, match circuit 41 and match circuit 103 are equivalent to first match circuit and second match circuit respectively.High frequency electric source 4 and high frequency electric source 100 are equivalent to first high frequency electric source and second high frequency electric source respectively, first high frequency electric source, the 4 output 10MHz～30MHz of upside, the High frequency power of 10kW for example, the High frequency power of 100 output of second high frequency electric source of downside 2MHz～6MHz, for example 3kW.From the power of first high frequency electric source 4, play a part to make and handle the gas activation, play a part the ion in the plasma is incorporated into substrate 10 sides from the power of second high frequency electric source 100.Matching box 42 and 102 is equivalent to the ground connection framework of first match circuit and the ground connection framework of second match circuit respectively in this example in addition.Though it is not shown in Fig. 9, but, between upper electrode 3 and match circuit 41, be inserted with high pass filter, and between lower electrode 5 and match circuit 103, be inserted with low pass filter, become between high frequency electric source 4 and high frequency electric source 100, not importing the other side's radio-frequency component.In this case, if see that from first high frequency electric source 4 then lower electrode 5 is exactly an anode electrode, if see that from second high frequency electric source 100 then upper electrode 3 is anode electrodes.
In addition, be provided with a plurality of impedances adjustment part 9A and 9C between upper electrode 3 and matching box 42, the top that these impedance adjustment part 9A and 9C have been connected to container handling 2 by matching box 42 is for example on the top, chamber.For the ease of diagram,, also can only be provided with 1 though impedance adjustment part 9A, the 9C (6A, 6C) of the impedance adjustment part of 2 upsides that only drawn and downside both can be provided with more than 3.In addition, matching box 42 is equivalent to be used for making the ground connection framework that turns back to first match circuit 41 of high frequency electric source 4 from the high-frequency current of first high frequency electric source 4 from the top of container handling 2 in this example, and 102 of matching boxes are equivalent to make the ground connection framework that turns back to second match circuit 103 of high frequency electric source 100 from the high-frequency current of second high frequency electric source 100 from the bottom of container handling 2.
The first impedance adjustment part 6A, 6C, as mentioned above, be to be used for its resistance value is adjusted into making and passing through plasma from upper electrode 3, the wall portion of lower electrode 5 and container handling 2 is till the matching box 42 (the ground connection framework of first match circuit), the base plate plasma body is become high-frequency resistance value for first high frequency electric source 4 on the path of uniform direction, become to than till from the wall portion of upper electrode 3 by plasma and container handling 2 to matching box 42, the littler impedance adjustment part of high-frequency resistance value of first high frequency electric source 4 on the path that wall portion plasma density is increased.When reducing plasma and become resistance value for the uniform path of direction for above-mentioned substrate, though it is desirable to ask from first high frequency electric source 4 value of current flowing plasma becomes to the path of uniform direction for substrate, and be set at and make it to become maximum, promptly be set at and make plasma become to the impedance in the path of direction uniformly becomes to be minimum for substrate, but in fact preferably in peaked 2% of electric current, preferably be set at become at least electric current peaked 10% in.Plasma becomes for substrate and is the uniform current value in the path of direction, for example can obtain with the ammeter that is connected respectively on impedance adjustment part 6A, the 6C, and use the aggregate value of this current value.
The second impedance adjustment part 9A, 9C, be be used for its resistance value be adjusted into till making from the wall portion of lower electrode 5 by plasma, upper electrode 3 and container handling 2 to matching box 102, the base plate plasma body is become high-frequency resistance value for second high frequency electric source 100 on the path of direction uniformly, become and be the littler impedance adjustment part of high-frequency resistance value than second high frequency electric source 100 on the path till from the wall portion of lower electrode 5 by plasma and container handling 2 to matching box 102, that wall portion plasma density is increased.When reducing to become impedance for the uniform path of direction for the aforesaid substrate plasma, though it is desirable to ask from second high frequency electric source 100 value of current flowing plasma becomes to the path of uniform direction for substrate, and be set at and make it to become maximum, but in fact preferably in peaked 2% of electric current, preferably be set at be at least electric current peaked 10% in.
(execution mode 3)
In the present embodiment, to as shown in figure 10, the plasma processing apparatus that bottom 2 frequency type of first high frequency electric source 4 and second high frequency electric source 100 are set in lower electrode 5 sides describes.In this plasma processing unit, by insulating barrier 50 protection tube 45 is connected on the downside of lower electrode 5, the lower end side of this protection tube 45 is connected on the bottom surface of container handling 2, matching box 42 is connected on the bottom of protection tube 45.In matching box 42; 2 match circuits 41,103 are set; one of these match circuits 41,103 distolaterally are connected on the lower electrode 5 by the conductive paths 46 and 101 that are configured in the protection tube 45 respectively; simultaneously, another of match circuit 41,103 then is connected with first high frequency electric source 4 and second high frequency electric source 100 respectively on distolateral.44 and 104 is the said coaxial cables in top.From the frequency and the power of the High frequency power of first high frequency electric source 4 and second high frequency electric source 100, with the described execution mode of Fig. 9 be same.
On upper electrode 3, be connected with a plurality of first impedance adjustment parts and be in this example 6A～6C of 3, with a plurality of second impedance adjustment parts be the distolateral of 3 impedance adjustment part 9A～9C at this example, simultaneously, another of these impedance adjustment part 6A～6C and 9A～9C is distolateral then by the peristome 30 of container handling 2 being covered top that the conductivity nappe 56 that gets up has been connected to container handling 2 for example on the top, chamber.The first and second impedance adjustment parts can be provided with more than 1 or 2 or 4.In this example, first impedance adjustment part 6A～6C also is provided with the filter that the high frequency corresponding with the frequency band of the high frequency of first high frequency electric source 4 passed through.In addition, second impedance adjustment part 9A～9C then is provided with the filter that the high frequency corresponding with the frequency band of the high frequency of second high frequency electric source 100 passed through.
In addition, matching box 42 in this example, dual-purpose is done to be used for making from the high-frequency current of first high frequency electric source 4 and is turned back to the ground connection framework of first match circuit that high frequency electric source 4 goes from the bottom of container handling 2 and be used for making the ground connection framework that turns back to second match circuit that high frequency electric source 100 goes from the high-frequency current of second high frequency electric source 100 from the bottom of container handling 2.
High-frequency current from first high frequency electric source 4, by the path flow of high frequency electric source 4 → match circuit 41 → lower electrode 5 → plasma → upper electrode 3 → the first impedance adjustment part 6A～6C → container handling 2 → matching boxes 42, then to pass through the path flow of high frequency electric source 100 → match circuit 103 → lower electrode 5 → plasma → upper electrode 3 → the second impedance adjustment part 9A～9C → container handling 2 → matching boxes 42 from the high-frequency current of second high frequency electric source 100.
First impedance adjustment part 6A～6C, be be used for its resistance value be adjusted into till making from the wall portion of lower electrode 5 by plasma, upper electrode 3 and container handling 2 to matching box 42, the base plate plasma body is become high-frequency resistance value for first high frequency electric source 4 on the path of direction uniformly, become and be the littler impedance adjustment part of high-frequency resistance value than first high frequency electric source 4 on the path till from the wall portion of lower electrode 5 by plasma and container handling 2 to matching box 42, that wall portion plasma density is increased.When reducing to become impedance for the uniform path of direction for the aforesaid substrate plasma, though it is desirable to ask from first high frequency electric source 4 value of current flowing plasma becomes to the path of uniform direction for substrate, and be set to make it to become and be maximum, promptly be set at and make plasma become to the uniform resistance value in the path of direction becomes to be minimum for substrate, but in fact preferably in peaked 2% of electric current, preferably be set at become at least electric current peaked 10% in.
Second impedance adjustment part 9A～9C, be be used for its resistance value be adjusted into till making from the wall portion of lower electrode 5 by plasma, upper electrode 3 and container handling 2 to matching box 42, the base plate plasma body is become high-frequency resistance value for second high frequency electric source 100 on the path of direction uniformly, become and be the littler impedance adjustment part of high-frequency resistance value than second high frequency electric source 100 on the path till from the wall portion of lower electrode 5 by plasma and container handling 2 to matching box 42, that wall portion plasma density is increased.When reducing to become impedance for the uniform path of direction for the aforesaid substrate plasma, though it is desirable to ask from second high frequency electric source 100 value of current flowing plasma becomes to the path of uniform direction for substrate, and be set at and make it to become maximum, promptly be set at and make plasma become to the impedance in the path of direction uniformly becomes to be minimum for substrate, but in fact preferably in peaked 2% of electric current, preferably be set at become at least electric current peaked 10% in.
In addition, the impedance adjustment part in the execution mode of Fig. 8～Figure 10 shown in Fig. 7 A～7C, also can constitute with the dielectric that has capacitive component.In addition, as shown in Figure 4, also can become making the kind of plasma treatment and the adjusted value of impedance adjustment part are formed corresponding data, make and when having selected plasma species, automatically the impedance adjustment part is adjusted.
Be the example of expression here, in Figure 11 for the layout under the situation that a plurality of impedances adjustment part is set.In this example, become and as amounting on the corresponding position (in the view field of these 5 points) of 5 points of 4 P1～P4 at 4 angles of rectangular substrate 10 and core P5 the impedance adjustment part is being set with this.
More than, if record for the distance (electrode gap) between upper electrode 3 and the lower electrode 5 and the suitable value of processing pressure, then as Fig. 1, Fig. 5 A and shown in Figure 9, be connected in the device of type of upper electrode 3 sides at high frequency electric source 4, interelectrode gap is preferably from 50mm to 300mm, and processing pressure is 13Pa～27Pa (100mTorr～200mTorr) preferably.In addition, as Fig. 8 and shown in Figure 10, be connected in the device of type of lower electrode 5 sides at high frequency electric source 4, interelectrode gap is preferably from 200mm to 700mm, and processing pressure is 0.7Pa～13Pa (5mTorr～100mTorr) preferably.
[embodiment]
Then, the experimental example to the effect that is used for confirming each execution mode of the present invention describes.
(experiment 1)
A. experimental technique
As experimental provision is the plasma processing apparatus of the such parallel flat formula shown in Fig. 5 A, uses the device that the impedance adjustment region of lower electrode has been carried out being divided into 4 parts (being to be divided into 3 parts) in Fig. 5 A.(6A～6D) couples together the impedance adjustment part that inductor 63 and capacitance variable capacitor 61 are connected in series side by side 4 as shown in figure 12 in impedance adjustment part 6.In addition, in Figure 12,, be equivalent to the dielectric capacitance between lower electrode and the container handling with the capacitance composition that C0 represents.
In addition, making the position of the micro actuator of capacitance variable capacitor carry out all changes is the impedance setting of impedance adjustment part all values, to each set point state of the plasma that in container handling, taken place of visualization all, detect electric current (electric current that in lower electrode, flows) that flows in the conductive path between impedance adjustment part and container handling and the voltage of measuring upper electrode simultaneously.As for the occurrence condition of plasma, the interval of upper electrode and lower electrode is set at 60mm, gas takes place to use as plasma, use SF
6The mist of gas, HCI gas and He gas, the frequency of high frequency electric source and power are set at 13 respectively, 56MHz, 7.5kW, and pressure is set at 20Pa (150mTorr).
B. experimental result
Figure 13 is the micro actuator position of expression capacitance variable capacitor with the resistance value Z (L-C) of the impedance of the capacitance of this capacitor, this capacitor, impedance adjustment part, also comprise the total resistance value of the C0 between lower electrode and the container handling, the key diagram of the relation in lower electrode between the visual state of the value of the voltage (upper voltage) of value, the upper electrode of mobile electric current (bottom electric current) and plasma.With regard to the visual state of plasma, 4 kinds of following evaluations have been used: the uniformity of luminance extremely high (◎); The uniformity of luminance is good (zero) substantially; The uniformity of luminance poor slightly (△); The uniformity of luminance bad (*).In addition, with regard to the value of bottom electric current shown in Figure 13 and the value of upper voltage, in Figure 14 and Figure 15, be drawn as curve respectively.In addition, the unit of capacitance value is pF in Figure 13, and the impedance of capacitor and the unit of resistance value are Ω, and the unit of current value and magnitude of voltage is respectively A and V.
From this result as can be known, the bottom electric current becomes at the 79A place and is maximum, plasma at this moment in the best state.When the bottom electrorheological became 78A, the state of plasma just became and is good substantially result, and the state of plasma just becomes and is poor slightly result when the bottom electrorheological becomes 72A.In addition, below 66A, then the state of plasma is extremely bad.Therefore, preferably resistance value is adjusted into and makes the bottom electric current become substantially to be maximum.In this example, consider evaluated error etc. after, preferably current distance maximum in bottom is in 10%, if then be considered to more preferred 2% with interior.Here said bottom current value becomes and is maximum substantially, and what say is that the upper voltage value becomes substantially and is maximum, and promptly the resistance value between lower electrode and the container handling becomes substantially and is minimum.In other words, saying that the bottom current value becomes substantially is maximum, become substantially minimum by plasma to the electrorheological of the wall portion of container handling stream from upper electrode in other words, can suppress the discharge between the wall portion of upper electrode and container handling, the uniformity of raising plasma.
(experiment 2)
A. experimental technique
Use the plasma processing apparatus of the parallel flat formula of such 2 frequency type that high frequency electric source 4, high frequency electric source 100 arranged in upper and lower settings shown in Figure 9 as experimental provision, carry out etching for the silicon fiml of film forming on the substrate surface of the rectangle of 2000mm * 2200mm.Treatment conditions are as follows.
Handle gas: SF
6Gas, HC1 gas and He gas
The frequency of the high frequency electric source of upper side and power: 13.56MHz and 20kW
The frequency and the power of the high frequency electric source of bottom one side: 3.2MHz and 4kW
Processing pressure: 20Pa (150mTorr).
In addition, at 4 angles of rectangular substrate and the position corresponding with core amount to 5 and be provided with in the localities from the impedance adjustment part of the high frequency of the high frequency electric source 4 of upper side with from the impedance adjustment part of the high frequency of the high frequency electric source 100 of bottom one side.As each impedance adjustment part, use the impedance adjustment part that the capacitance variable capacitor shown in Fig. 3 D and inductor are connected in series.In addition, by means of the ammeter that in series is inserted in each impedance adjustment part, current value (aggregate value of the current value of above-mentioned ammeter) in the lower electrode side flow will become on the adjustment point for minimum, and the mean value that is set in a plurality of locational etching speeds in the face on substrate surface and the inner evenness of etching speed are investigated.In addition, with the same condition of above-mentioned treatment conditions under under the situation that the impedance adjustment part is not set, the power that is applied to the lower electrode side is become be under 0 the situation, under the inferior all situations of the situation of the high frequency electric source that lower side is not set, similarly the mean value of etching speed and the inner evenness of etching speed are investigated.
B. experimental result
Figure 16 is its result of expression.By this result as can be known, and only upper electrode is connected under the situation on the high frequency electric source relatively, because high frequency electric source also has been connected on the lower electrode, so will improve etch-rate.But, though so the inner evenness of etch-rate will worsen owing to becoming to 2 frequencies up and down, but adopt by means of the impedance adjustment part impedance to be adjusted into the current value that makes to the lower electrode side flow and to become way for minimum, the inner evenness of etch-rate also can improve.
In each execution mode discussed above, the action of the various piece of plasma processing apparatus, related each other, so can in the association of considering each other, replace as a series of action.In addition, have benefited from replacing like this, just can become execution mode for method of plasma processing.
More than, though be the explanation that carry out preferred implementation of the present invention referring to the accompanying drawing limit on the limit,, self-evident these execution modes that is not limited to of the present invention.If those skilled in the art obviously can expect various variation or correction example in the scope of technical scheme, still, also can recognize these variation certainly and revise example also to belong to technical scope of the present invention.
Claims (14)
1. a plasma processing apparatus is used for making the processing gaseous plasmaization with High frequency power in container handling, with this plasma substrate is handled, and it is characterized in that this plasma processing unit possesses:
The cathode electrode and the anode electrode that in this container handling, insulate and self be provided with in opposite directions with this container handling;
High frequency electric source, one is distolateral to be connected to described cathode electrode by match circuit; With
The impedance adjustment part, it has capacitive component, and the one end is connected to described anode electrode, and the other end is connected to described container handling,
Described substrate is positioned at the electrode of below in described cathode electrode and the described anode electrode by mounting,
The resistance value of described impedance adjustment part is adjusted to the resistance value till making from the wall portion of described cathode electrode by plasma, described anode electrode and described container handling to the ground connection framework of described match circuit, littler than the resistance value till from the wall portion of described cathode electrode by plasma and described container handling to the ground connection framework of described match circuit
Described impedance adjustment part is provided with a plurality of, and each impedance adjustment part can change resistance value, an end of each impedance adjustment part be connected in the described anode electrode on length direction position of coming separated from one another.
2. plasma processing apparatus according to claim 1 is characterized in that:
The resistance value that the resistance value of described impedance adjustment part is adjusted to till making from the wall portion of described cathode electrode by plasma, described anode electrode and described container handling to the ground connection framework of described match circuit becomes minimum.
3. plasma processing apparatus according to claim 1 is characterized in that:
Resistance value is set in described impedance adjustment part, makes when having changed the value of the electric current that flows into to described anode electrode adjusting resistance value, obtains the value of maximum more than 90% of this current value.
4. plasma processing apparatus according to claim 1 is characterized in that:
The resistance value of described impedance adjustment part is variable.
5. plasma processing apparatus according to claim 1 is characterized in that:
Described impedance adjustment part is arranged between described anode electrode and the described container handling, has the dielectric of capacitive component.
6. a plasma processing apparatus is used for making the processing gaseous plasmaization with High frequency power in container handling, with this plasma substrate is handled, and it is characterized in that this plasma processing unit possesses:
The upper electrode and the lower electrode that in this container handling, insulate and self be provided with in opposite directions with this container handling;
First high frequency electric source of 10MHz～30MHz, the one end is connected to described lower electrode by first match circuit;
Second high frequency electric source of 2MHz～6MHz, the one end is connected to described lower electrode by second match circuit; With
The first impedance adjustment part and the second impedance adjustment part that have capacitive component, this first an impedance adjustment part and second an impedance adjustment part end separately are connected to described upper electrode, and the other end is connected to described container handling,
Described substrate by mounting in described lower electrode,
The described first impedance adjustment part, has the filter that the high frequency corresponding with the frequency band of the high frequency of first high frequency electric source passed through, the resistance value of the described first impedance adjustment part is adjusted to and makes and to pass through plasma from described lower electrode, resistance value under the frequency of described first high frequency electric source of the wall portion of described upper electrode and described container handling till the ground connection framework of described first match circuit, littler than the resistance value under the frequency of described first high frequency electric source till from the wall portion of described lower electrode by plasma and described container handling to the ground connection framework of described first match circuit
The described second impedance adjustment part, has the filter that the high frequency corresponding with the frequency band of the high frequency of second high frequency electric source passed through, the resistance value of the described second impedance adjustment part is adjusted to and makes and to pass through plasma from described lower electrode, resistance value under the frequency of described second high frequency electric source of the wall portion of described upper electrode and described container handling till the ground connection framework of described second match circuit is littler than the resistance value under the frequency of described second high frequency electric source till from the wall portion of described lower electrode by plasma and described container handling to the ground connection framework of described second match circuit.
7. according to the described plasma processing apparatus of claim 6, it is characterized in that:
The resistance value that the resistance value of the described first impedance adjustment part is adjusted under the frequency of described first high frequency electric source till making from the wall portion of described lower electrode by plasma, described upper electrode and described container handling to the ground connection framework of described first match circuit becomes minimum
The resistance value that the resistance value of the described second impedance adjustment part is adjusted under the frequency of described second high frequency electric source till making from the wall portion of described lower electrode by plasma, described upper electrode and described container handling to the ground connection framework of described second match circuit becomes minimum.
8. plasma processing apparatus according to claim 6 is characterized in that:
Resistance value is set in the described first impedance adjustment part, by adjusting the current value change that resistance value makes the high frequency of first high frequency electric source of going into to the top electrode stream, obtains the value of maximum more than 90% of this current value,
Resistance value is set in the described second impedance adjustment part, by adjusting the current value change that resistance value makes the high frequency of second high frequency electric source of going into to the top electrode stream, obtains the value of maximum more than 90% of this current value.
9. plasma processing apparatus according to claim 6 is characterized in that:
The resistance value that described first impedance adjustment part and the described second impedance adjustment part constitute respectively under the frequency of resistance value under the frequency that makes described first high frequency electric source and described second high frequency electric source is variable.
10. according to the described plasma processing apparatus of claim 6, it is characterized in that:
Described first impedance adjustment part and the described second impedance adjustment part are arranged on the dielectric that has capacitive component between described upper electrode and the described container handling respectively.
11., it is characterized in that according to the described plasma processing apparatus of claim 6:
The described first impedance adjustment part is provided with a plurality of, and each impedance adjustment part can change resistance value, an end of each impedance adjustment part be connected in the described upper electrode on length direction position of coming separated from one another,
The described second impedance adjustment part is provided with a plurality of, and each impedance adjustment part can change resistance value, an end of each impedance adjustment part be connected in the described upper electrode on length direction position of coming separated from one another.
12. a method of plasma processing is used for making the processing gaseous plasmaization with High frequency power in container handling, with this plasma substrate handled,
In this container handling with the insulation of this container handling and self cathode electrode and anode electrode are set opposite to each other;
By match circuit high frequency electric source is connected to the distolateral of described cathode electrode;
Be positioned on the electrode of lower side among substrate is loaded into described cathode electrode and anode electrode;
Be provided with the impedance adjustment part of capacitive component, one is distolateral to be connected on the described anode electrode, simultaneously another distolateral being connected on the described container handling;
The resistance value of described impedance adjustment part is adjusted to the resistance value till making from the wall portion of described cathode electrode by plasma, described anode electrode and described container handling to the ground connection framework of described match circuit, littler than the resistance value till from the wall portion of described cathode electrode by plasma and described container handling to the ground connection framework of described match circuit
Described impedance adjustment part is provided with a plurality of, and each impedance adjustment part can change resistance value, an end of each impedance adjustment part be connected in the described anode electrode on length direction position of coming separated from one another.
13. a method of plasma processing is used for making the processing gaseous plasmaization with High frequency power in container handling, with this plasma substrate is handled, and it is characterized in that:
Be arranged on the upper electrode and the lower electrode that insulate and self be provided with in opposite directions with this container handling in this container handling;
Connect first high frequency electric source of 10MHz～30MHz, make the one end be connected to described lower electrode by first match circuit;
Connect second high frequency electric source of 2MHz～6MHz, make the one end be connected to described lower electrode by second match circuit;
Substrate-placing is arrived described lower electrode top;
Be provided with the first impedance adjustment part and the second impedance adjustment part of capacitive component, this first an impedance adjustment part and second an impedance adjustment part end separately are connected on the described upper electrode, and the other end is connected on the described container handling;
The described first impedance adjustment part, has the filter that the high frequency corresponding with the frequency band of the high frequency of first high frequency electric source passed through, the resistance value of the described first impedance adjustment part is adjusted into makes and to pass through plasma from described lower electrode, resistance value under the frequency of described first high frequency electric source of the wall portion of described upper electrode and described container handling till the ground connection framework of described first match circuit, littler than the resistance value under the frequency of described first high frequency electric source till from the wall portion of described lower electrode by plasma and described container handling to the ground connection framework of described first match circuit
The described second impedance adjustment part, has the filter that the high frequency corresponding with the frequency band of the high frequency of second high frequency electric source passed through, the resistance value of the described second impedance adjustment part is adjusted into makes and to pass through plasma from described lower electrode, resistance value under the frequency of described second high frequency electric source of the wall portion of described upper electrode and described container handling till the ground connection framework of described second match circuit becomes littler than the resistance value under the frequency of described second high frequency electric source till from the wall portion of described lower electrode by plasma and described container handling to the ground connection framework of described second match circuit.
14., it is characterized in that according to the described method of plasma processing of claim 13:
The described first impedance adjustment part is provided with a plurality of, and each impedance adjustment part can change resistance value, an end of each impedance adjustment part be connected in the described upper electrode on length direction position of coming separated from one another,
The described second impedance adjustment part is provided with a plurality of, and each impedance adjustment part can change resistance value, an end of each impedance adjustment part be connected in the described upper electrode on length direction position of coming separated from one another.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2004136566 | 2004-04-30 | ||
| JP2004136566 | 2004-04-30 | ||
| JP2004381290 | 2004-12-28 |
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| CN108770167A (en) * | 2013-08-16 | 2018-11-06 | 应用材料公司 | Elongated capacitively coupled plasma source for high-temperature low-pressure force environment |
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| CN108770167A (en) * | 2013-08-16 | 2018-11-06 | 应用材料公司 | Elongated capacitively coupled plasma source for high-temperature low-pressure force environment |
| CN108770167B (en) * | 2013-08-16 | 2021-01-12 | 应用材料公司 | Elongated capacitively coupled plasma source for high temperature low pressure environments |
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