CN101872741B

CN101872741B - Dominant wavelength distribution convergent light emitting element and manufacturing method thereof

Info

Publication number: CN101872741B
Application number: CN 200910136885
Authority: CN
Inventors: 吕志强; 徐舒婷; 陈彦文; 王健源; 刘如熹; 谢明勋; 郭政达
Original assignee: Epistar Corp
Current assignee: Epistar Corp
Priority date: 2009-04-24
Filing date: 2009-04-24
Publication date: 2013-06-12
Anticipated expiration: 2029-04-24
Also published as: CN101872741A

Abstract

The invention discloses a dominant wavelength distribution convergent light emitting element and a manufacturing method thereof. The light emitting element at least comprises a substrate, a plurality of light emitting laminates arranged on the substrate and a wavelength conversion convergence layer positioned on the light emitting laminates, wherein the plurality of light emitting laminates emit first light beams with a first dominant wavelength variance; and the wavelength conversion convergence layer absorbs the first light beams and emits second light beams with a second dominant wavelength variance. In the light emitting element, the first dominance wavelength variance is greater than the second dominant wavelength variance of the second light beams.

Description

The light-emitting component of dominant wavelength distribution convergent and manufacture method thereof

Technical field

The present invention relates to a kind of wafer scale light-emitting component and manufacture method thereof, particularly relate to a kind of dominant wavelength (dominant wavelength) that comprises on it and be LED wafer and a kind of utilizing emitted light dominant wavelength of LED wafer that makes that convergence distributes and be the method that convergence distributes.

Background technology

Light-emitting diode (light-emitting diode, LED) principle of luminosity is the energy difference that utilizes electronics to move between N-shaped semiconductor and p-type semiconductor, form with light discharges energy, such principle of luminosity is different from the principle of luminosity of incandescent lamp heating, so light-emitting diode is called as cold light source.In addition, light-emitting diode has the advantages such as high-durability, life-span are long, light and handy, power consumption is low, and therefore now illumination market is placed high hopes for light-emitting diode, and it is considered as the illuminations of a new generation.

Figure 1A to Fig. 1 E is the manufacturing process schematic diagram of known light-emitting component.

At first, as shown in Figure 1A, provide substrate 10; Again as shown in Figure 1B, form a plurality of epitaxial loayers 12 on substrate 10; Then, as shown in Fig. 1 C, utilize the photoengraving lithography to carry out etching for a plurality of epitaxial loayers 12, to make a plurality of luminous laminations 14 on substrate 10; Subsequently, as shown in Fig. 1 D, form electrode 16 on luminous lamination 14, to form LED wafer (wafer) 100; At last, as shown in Fig. 1 E, LED wafer 100 is cut, to form LED core 18.

Yet, in fact on LED wafer 100, numerous luminous lamination 16 emitted light dominant wavelengths distribute also inhomogeneous, its gap can reach 15nm to 20nm or larger, and therefore the above-mentioned luminous lamination 16 rear emitted light dominant wavelength of formation LED core 18 differences are also large.The inhomogeneous problem of these LED core 18 utilizing emitted light dominant wavelengths has affected the consistency of using its product performance of product of LED core further.Be mixed into white light as example take known dominant wavelength 460nm blue LED chip collocation yellow fluorescence powder, if distributing, the dominant wavelength of the blue LED tube core on same LED wafer reaches 20nm, be that its dominant wavelength distributes by 450nm to 470nm, the mixed white light color temperature distribution of light that the yellow wavelengths transformational substance that its collocation excitation wavelength is 570nm excites also is affected.

As shown in Figure 2, dominant wavelength distributional difference due to each luminous lamination on LED wafer, after its formed tube core collocation transformational substance, mixed its colour temperature of white light (color temperature) is distributed between 6500K to 9500K, colour temperature variation with about 3000K left and right causes very large impact to the consistency of product quality.

For solving luminous lamination 16 dominant wavelength problems pockety on above-mentioned same LED wafer, in known LED core 18 manufacture processes, often as shown in Figure 3, add a program of surveying, classifying (Sorting) and screen (Binning), screen for numerous LED core 18, to pick out the close LED core 18 of dominant wavelength distribution, with the application in response to different wave length characteristic demand.

Although point is surveyed, is classified and the program of screening can reduce the dominant wavelength skewness to using the conforming impact of product quality performance, but when LED core 18 is applied to dominant wavelength is evenly distributed when requiring harsh product, the back light source in LED element of large-sized monitor for example, on LED wafer 100, spendable LED core 18 ratios are on the low side.In addition, classification is wasted time and energy with the operation of screening, and has also increased cost and the required time of production LED core.

Summary of the invention

Purpose of the present invention is providing a kind of LED wafer of dominant wavelength distribution convergent, comprise substrate, a plurality of luminous lamination is positioned on substrate, and wavelength conversion convergence layer, be positioned on a plurality of luminous laminations, in order to the dominant wavelength that restrains and the conversion luminescence lamination sends.

Another object of the present invention is to disclose a kind of method that LED wafer dominant wavelength distributes that restrains, its step comprises provides substrate, form a plurality of luminous being stacked on substrate, and form wavelength conversion convergence layer on a plurality of luminous laminations, make the dominant wavelength that on LED wafer, each luminous lamination emits beam present the convergence distribution.

Another purpose of the present invention is to provide method of manufacturing luminescent device, by forming wavelength conversion convergence layer, to restrain the wavelength variation of luminous lamination emitted light, improves thus the utilization rate of LED core.

A further object of the present invention is to provide method of manufacturing luminescent device, by forming wavelength conversion convergence layer, to restrain the dominant wavelength variation of luminous lamination emitted light, reduces thus the operation of classifying in the LED core production process with screening.

Under coordinate appended accompanying drawing to illustrate in detail by specific embodiment, when the effect that is easier to understand purpose of the present invention, technology contents, characteristics and reaches.

Description of drawings

Figure 1A to Fig. 1 E is known LED core manufacturing process schematic diagram.

Fig. 2 is the CIE 1931 hue coordinate figure of known blue LED tube core collocation yellow fluorescence powder.

Fig. 3 is that known LED core point measures intention.

Fig. 4 A to Fig. 4 F is the manufacturing process schematic diagram of the embodiment of the present invention.

Fig. 5 is the structural representation of another embodiment of the present invention.

Fig. 6 is the CIE 1931 hue coordinate figure of the embodiment of the present invention.

Fig. 7 is the structural representation of further embodiment of this invention.

Fig. 8 A and Fig. 8 B are yet another embodiment of the invention structural representation.

Fig. 9 is the structural representation of cutting step of the present invention.

Description of reference numerals

10～substrate, 12～epitaxial loayer

14～luminous lamination 16～electrode

18～LED core, 100～LED wafer

20～substrate, 22～epitaxial loayer

220～the first conductive-type semiconductor layer 222～active layers

224 second conductive-type semiconductor layers 24～luminous lamination

26～electrode, 200～LED wafer

210～the first light beam 28～wavelength conversion convergence layer

220～the second light beam 30～LED core

32～wavelength conversion layer 230～the 3rd light beam

240～the 4th light beam 500～LED wafer

50～substrate 52,52 '～luminous lamination

520～the first conductive-type semiconductor layer 522～luminescent layers

524～the second conductive-type semiconductor layer 54～the first electrodes

56～the second electrode 58～wavelength conversion convergence layer

60～electric connection structure, 62～insulating barrier

64～metal level, 70～light emitting diode array chips

Embodiment

Below coordinate the description of drawings embodiments of the invention.

Fig. 4 A to Fig. 4 F is the manufacturing process schematic diagram of the embodiment of the present invention, as shown in Fig. 4 A, substrate 20 is provided, wherein substrate 20 can be electrically-conductive backing plate, and as shown in Figure 4 B, form a plurality of epitaxial loayers 22 on substrate 20, wherein a plurality of epitaxial loayers 22 from top to bottom comprise the first conductive-type semiconductor layer 220 at least, active layer 222 and the second conductive-type semiconductor layer 224, and the material of a plurality of epitaxial loayers 22 can be selected from and comprise aluminium (Al), gallium (Ga), indium (In), nitrogen (N), the semiconductor substance of phosphorus (P) or arsenic (As), for example gallium nitride (GaN) series material or AlGaInP (AlGaInP) series material, following the present embodiment describes as an example of gallium nitride series material example.

Subsequently, shown in Fig. 4 C, utilize a plurality of epitaxial loayers 22 of photoengraving lithography etching to form a plurality of luminous laminations 24 on substrate 20 for another example; As shown in Fig. 4 D, utilize evaporation coating technique respectively at forming electrode 26 on a plurality of luminous laminations 24, to obtain LED wafer (wafer) 200.

This luminous lamination 24 can send the first light beam 210, and the dominant wavelength of the first light beam can be between between 390nm to 430nm, wherein has the first dominant wavelength difference between optional 2 first light beams 210, in this LED wafer 200, the maximum of the first dominant wavelength difference is the first dominant wavelength variation value V ₁

Then, after the step that forms electrode 26, as shown in Fig. 4 E, further in the surface coverage wavelength conversion convergence layer 28 of luminous lamination 24, its material can be fluorescent material or phosphorus, and wavelength conversion convergence layer 28 is made of fluorescent powder in the present embodiment, and its material can be selected from Si ₃MgSi ₂O ₈: Eu, BaMgAl ₁₀O ₁₇: Eu, (SrBaCa) ₅(PO ₄) ₃Cl:Eu, Sr ₃(Al ₂O ₅) Cl ₂: Eu ²⁺And Sr ₄Al ₁₄O ₂₅: any one or more than one the material of the blue-fluorescence such as Eu group that powder consists of, and above-mentioned fluorescent powder is coated the surface of luminous lamination 24 equably or partly; Wherein, this wavelength conversion convergence layer 28 absorbs haply the first light beam 210 that luminous lamination 24 sends fully and is converted to the second light beam 220.

In the present embodiment, these the second light beam 220 dominant wavelengths are between long wavelength's blue light of 450nm to 470nm, wherein have the second dominant wavelength difference between optional 2 second light beams 220, in this LED wafer 200, the maximum of the second dominant wavelength difference is the second dominant wavelength variation value V ₂At last, as shown in Fig. 4 F, a plurality of luminous lamination 24 on LED wafer 200 is cut, to form a plurality of LED core 30.

In above-described embodiment, the first dominant wavelength variation value V ₁Between between 15nm to 20nm, and the second dominant wavelength variation value V ₂Less than 10nm, preferred person is less than 5nm; By form wavelength conversion convergence layer 28 on luminous lamination 24, to reduce the dominant wavelength difference that in LED wafer 200, optional two luminous laminations 24 emit beam, make the dominant wavelength distribution of the formed LED core 30 of same LED wafer 200 be the convergence distribution, improve the In-commission Rate of luminous lamination 24 on LED wafer 200; Moreover, above-described embodiment more can omit classification and the operation of screening in known luminescence diode chip manufacture process, reduces production costs further.

In addition, the present invention also can be as shown in Figure 5, after the step that forms wavelength conversion convergence layer 28, form wavelength conversion layer 32 on wavelength conversion convergence layer 28, wherein, wavelength conversion layer 32 comprises one or more fluorescent powder, and its material can be selected from yellow fluorescence powder, the BaMgAl such as yttrium-aluminium-garnet, alkaline earth halogen aluminate ₁₀O ₁₇: Eu, MnBa ₂SiO ₄: Eu, (Sr, Ca) SiO ₄: Eu, CaSc ₂O ₄: Eu, Ca ₈Mg (SiO ₄) ₄Cl ₂: Eu, Mn, SrSi ₂O ₂N ₂: Eu, LaPO ₄: Tb, Ce, Zn ₂SiO ₄: Mn, ZnS:Cu, YBO ₃: Ce, Tb, (Ca, Sr, Ba) Al ₂O ₄: Eu, Sr ₂P ₂O ₇: Eu, Mn, SrAl ₂S ₄: Eu, BaAl ₂S ₄: Eu, Sr ₂Ga ₂S ₅: Eu, SiAlON:Eu, KSrPO ₄: Tb, Na ₂Gd ₂B ₂O ₇: Ce, the green fluorescence powders such as Tb are with Y ₂O ₃: Eu, YVO ₄: Eu, CaSiAlN ₃: Eu, (Sr, Ca) SiAlN ₃: Eu, Sr ₂Si ₅N ₈: Eu, CaSiN ₂: Eu, (Y, Gd) BO ₃: Eu, (La, Y) ₂O ₂S:Eu, La ₂TeO ₆: Eu, SrS:Eu, Gd ₂MoO ₆: Eu, Y ₂WO ₆: Eu, Bi, Lu ₂WO ₆: Eu, Bi, (Ca, Sr, Ba) MgSi ₂O ₆: Eu, Mn, Sr ₃SiO ₅: Eu, SrY ₂S ₄: Eu, CaSiO ₃: Eu, Ca ₈MgLa (PO ₄) ₇: Eu, Ca ₈MgGd (PO ₄) ₇: Eu, Ca ₈MgY (PO ₄) ₇: Eu, CaLa ₂S ₄: the red fluorescence powders such as Ce consist of at least a material in group, and wherein above-mentioned fluorescent powder is coated on wavelength convergence conversion layer 28 equably or partly.

In the present embodiment, wavelength conversion layer 32 comprises at least a yellow fluorescence powder, these wavelength conversion layer 32 meeting absorption portion second light beams 220, and be converted to the 3rd yellow light beam 230, wherein the dominant wavelength of above-mentioned the 3rd light beam 230 is 570nm; Subsequently, above-mentioned yellow the 3rd light beam 230 mixes the 4th light beam 240 that produces white with the second light beam 220 that is not absorbed by wavelength conversion layer 32.

Because the dominant wavelength of the second light beam is 460nm, and the second dominant wavelength maximum difference is less than 10nm, and preferred person be less than 5nm, thus in the present embodiment the second light beam dominant wavelength distribution between between 455nm to 465nm; Fig. 6 is the CIE 1931 chromaticity coordinate figure of the embodiment of the present invention the 4th light beam, as shown in Figure 6, above-mentioned the second light beam 220 mixes gained the 4th light beam 240 with the 3rd light beam 230, its colour temperature approximately is distributed in (intersection point of blackbody curve and solid line in figure) between 6500K to 8500K, its color temperature difference is less than 2000K, and preferred person is less than 1000K.

Directly use the blue LED chip collocation yellow fluorescence powder of dominant wavelength distribution 15nm to 20nm to be mixed into to have the 3000K color temperature difference white light of (intersection point of blackbody curve and dotted line in figure) in the known technology, promoted significantly the uniformity of each luminous lamination emitted light on the LED wafer in the embodiment of the present invention.

moreover, in the above-described embodiments, although explain with the light emitting diode with vertical structure tube core, do not mean that scope of the present invention is confined to the light-emitting diode of vertical stratification, Fig. 7 is the another embodiment of the present invention structural representation, as shown in Figure 7, LED wafer 500 comprises substrate 50, a plurality of luminous laminations 52 that are placed on substrate 50, the first electrode 54 and the second electrode 56, and wavelength conversion convergence layer 58, wherein luminous lamination 52 from top to bottom comprises the first conductive-type semiconductor layer 520 at least, active layer 522, and second conductive-type semiconductor layer 524, the plane that all has exposed the second conductive-type semiconductor layer 524 on each luminous lamination 52, the first electrode 54 and the second electrode 56 lay respectively on the first conductive-type semiconductor layer 520 and the second conductive-

type semiconductor layer

524, 58 of convergence layer of wavelength conversion are covered on a plurality of luminous laminations 52.

In addition, Fig. 8 A and Fig. 8 B are further embodiment of this invention structural representation, and the present invention also can comprise electric connection structure 60 as shown in the figure, in order to the adjacent luminous lamination 52/52 ' of connecting; As shown in Fig. 8 A, the electric connection structure 60 of the present embodiment is metal wire, utilize lead-in wire (wire bonding) technology to make the first electrode 54 of the second electrode 56 and adjacent another luminous lamination 52 ' on luminous lamination 52 produce and be electrically connected, allow form series circuit between different luminous lamination 52/52 '; Also can be as shown in Fig. 8 B, its electrically connect structure 60 comprises insulating barrier 62 and metal level 64, first form insulating barrier 62 between luminous lamination 52 and adjacent luminous lamination 52 ', then form again metal level 64, make the first electrode 54 of the second electrode 56 and adjacent another luminous lamination 52 ' on luminous lamination 52 produce and be electrically connected, make between different luminous lamination 52/52 ' and form series circuit.

Moreover, in the step of cutting LED wafer, as shown in Figure 9, except cutting as line of cut A, each luminous lamination 52 is cut into outside LED core, also can cut according to line of cut B, a plurality of luminous laminations 52/52 ' that utilize electric connection structure 60 to form series connection are cut into chip-scale light emitting diode matrix 70.Under general status, the pressure drop of single luminous lamination 52/52 ' is about 3.5V, and therefore the luminous lamination 52/52 ' with 14 series connection is cut into light emitting diode array chips (chip) 70, just can directly apply to the automobile-used AC-powered of 48V; Also the luminous lamination 52/52 ' of 30 series connection can be cut into light emitting diode array chips 70, make it to directly apply in 100V family expenses alternating current; Wherein, in above-mentioned light emitting diode array chips 70, owing to all having wavelength conversion convergence layer on each luminous lamination 52/52 ', therefore the dominant wavelength of each luminous lamination 52/52 ' emitted light is more consistent, omit thus the operation of first arranging again according to dominant wavelength distributive sorting and screening in known luminescence diode array tube core manufacture process, to reduce production costs.

Above-described embodiment only is explanation technological thought of the present invention and characteristics, its purpose makes those skilled in the art can understand content of the present invention and implement according to this, when can not with the restriction scope of the invention, equivalent variations or the modification namely generally done according to disclosed spirit must be contained within the scope of the present invention.

Claims

1. the method for manufacturing luminescent device of a dominant wavelength distribution convergent, comprise the following steps: at least

Substrate is provided;

Form a plurality of luminous being stacked on this substrate, wherein these a plurality of luminous laminations send the first light beam, and the maximum of the dominant wavelength difference between any two the first light beams is the first dominant wavelength variation value; And

Form wavelength conversion convergence layer on these a plurality of luminous laminations, this wavelength conversion convergence layer absorbs this first light beam and sends the second light beam, and the maximum of the dominant wavelength difference between any two the second light beams is the second dominant wavelength variation value, and wherein this first dominant wavelength variation value is greater than this second light beam dominant wavelength variation value.

2. the method for manufacturing luminescent device of dominant wavelength distribution convergent as claimed in claim 1, wherein the material of these a plurality of luminous laminations is selected from the semiconductor substance that comprises aluminium, gallium, indium, nitrogen, phosphorus or arsenic.

3. the method for manufacturing luminescent device of dominant wavelength distribution convergent as claimed in claim 1, wherein the dominant wavelength of this first light beam is between between 390nm to 430nm.

4. the method for manufacturing luminescent device of dominant wavelength distribution convergent as claimed in claim 1, wherein this first light beam is absorbed by this wavelength conversion convergence layer fully.

5. the method for manufacturing luminescent device of dominant wavelength distribution convergent as claimed in claim 1, this wavelength conversion convergence layer comprises phosphorescence powder or fluorescent powder at least, and wherein the fluorescent powder of this wavelength conversion convergence layer is selected from Si ₃MgSi ₂O ₈: Eu, BaMgAl ₁₀O ₁₇: Eu, (SrBaCa) ₅(PO ₄) ₃Cl:Eu, Sr ₃(Al ₂O ₅) Cl ₂: Eu ²⁺And Sr ₄Al ₁₄O ₂₅: Eu consists of at least a material in group.

6. the method for manufacturing luminescent device of dominant wavelength distribution convergent as claimed in claim 1, also comprise and form at least one wavelength conversion layer on this wavelength conversion convergence layer, this second light beam of this wavelength conversion layer absorption portion and send the 3rd light beam, and this second light beam mixes generation the 4th light beam with the 3rd light beam, wherein the material of this wavelength conversion layer is selected from yellow fluorescence powder, the BaMgAl of yttrium-aluminium-garnet, alkaline earth halogen aluminate ₁₀O ₁₇: Eu, MnBa ₂SiO ₄: Eu, (Sr, Ca) SiO ₄: Eu, CaSc ₂O ₄: Eu, Ca ₈Mg (SiO ₄) ₄Cl ₂: Eu, Mn, SrSi ₂O ₂N ₂: Eu, LaPO ₄: Tb, Ce, Zn ₂SiO ₄: Mn, ZnS:Cu, YBO ₃: Ce, Tb, (Ca, Sr, Ba) Al ₂O ₄: Eu, Sr ₂P ₂O ₇: Eu, Mn, SrAl ₂S ₄: Eu, BaAl ₂S ₄: Eu, Sr ₂Ga ₂S ₅: Eu, SiAlON:Eu, KSrPO ₄: Tb, Na ₂Gd ₂B ₂O ₇: Ce, green fluorescence powder and the Y of Tb ₂O ₃: Eu, YVO ₄: Eu, CaSiAlN ₃: Eu, (Sr, Ca) SiAlN ₃: Eu, Sr ₂Si ₅N ₈: Eu, CaSiN ₂: Eu, (Y, Gd) BO ₃: Eu, (La, Y) ₂O ₂S:Eu, La ₂TeO ₆: Eu, SrS:Eu, Gd ₂MoO ₆: Eu, Y ₂WO ₆: Eu, Bi, Lu ₂WO ₆: Eu, Bi, (Ca, Sr, Ba) MgSi ₂O ₆: Eu, Mn, Sr ₃SiO ₅: Eu, SrY ₂S ₄: Eu, CaSiO ₃: Eu, Ca ₈MgLa (PO ₄) ₇: Eu, Ca ₈MgGd (PO ₄) ₇: Eu, Ca ₈MgY (PO ₄) ₇: Eu, CaLa ₂S ₄: the red fluorescence powder of Ce consists of at least a material in group.

7. the method for manufacturing luminescent device of dominant wavelength distribution convergent as claimed in claim 6, wherein the color temperature distribution of the 4th light beam is less than 2000K.

8. the method for manufacturing luminescent device of dominant wavelength distribution convergent as claimed in claim 1, also comprise a plurality of electric connection structures of formation, with these a plurality of luminous laminations of series connection.

9. the method for manufacturing luminescent device of dominant wavelength distribution convergent as claimed in claim 1, also comprise the step of cutting this substrate.

10. the light-emitting component of a dominant wavelength distribution convergent comprises at least:

Substrate;

A plurality of luminous laminations are positioned on this substrate, and wherein this luminous lamination sends the first light beam, and the maximum of the dominant wavelength difference between any two the first light beams is the first dominant wavelength variation value;

A plurality of electrodes lay respectively on these a plurality of luminous laminations, form with this luminous lamination to be electrically connected; And

A plurality of wavelength conversion convergence layer, be covered in respectively on these a plurality of luminous laminations, absorb this first light beam and be converted to the second light beam, and the maximum of the dominant wavelength difference between any two the second light beams is the second dominant wavelength variation value, and wherein this first dominant wavelength variation value is greater than this second dominant wavelength variation value.

11. the light-emitting component of dominant wavelength distribution convergent as claimed in claim 10, wherein this first light beam is absorbed by this wavelength conversion convergence layer fully.

12. the light-emitting component of dominant wavelength distribution convergent as claimed in claim 10, wherein the dominant wavelength of this first light beam is between between 390nm to 430nm.

13. the light-emitting component of dominant wavelength distribution convergent as claimed in claim 10, this wavelength conversion convergence layer comprises phosphorescence powder or fluorescent powder at least, and wherein the fluorescent powder material of this wavelength conversion convergence layer is selected from Si ₃MgSi ₂O ₈: Eu, BaMgAl ₁₀O ₁₇: Eu, (SrBaCa) ₅(PO ₄) ₃Cl:Eu, Sr ₃(Al ₂O ₅) Cl ₂: Eu ²⁺And Sr ₄Al ₁₄O ₂₅: Eu consists of at least a material in group.

14. the light-emitting component of dominant wavelength distribution convergent as claimed in claim 10, wherein this luminous lamination is selected from the semiconductor substance that comprises aluminium, gallium, indium, nitrogen, phosphorus or arsenic.

15. the light-emitting component of dominant wavelength distribution convergent as claimed in claim 10, also comprising wavelength conversion layer is positioned on this wavelength conversion convergence layer, this second light beam of this wavelength conversion layer absorption portion, and launch the 3rd light beam, and the 3rd light beam mixes generation the 4th light beam with this second light beam, wherein the material of this wavelength conversion layer is selected from yellow fluorescence powder, the BaMgAl of yttrium-aluminium-garnet, alkaline earth halogen aluminate ₁₀O ₁₇: Eu, MnBa ₂SiO ₄: Eu, (Sr, Ca) SiO ₄: Eu, CaSc ₂O ₄: Eu, Ca ₈Mg (SiO ₄) ₄Cl ₂: Eu, Mn, SrSi ₂O ₂N ₂: Eu, LaPO ₄: Tb, Ce, Zn ₂SiO ₄: Mn, ZnS:Cu, YBO ₃: Ce, Tb, (Ca, Sr, Ba) Al ₂O ₄: Eu, Sr ₂P ₂O ₇: Eu, Mn, SrAl ₂S ₄: Eu, BaAl ₂S ₄: Eu, Sr ₂Ga ₂S ₅: Eu, SiAlON:Eu, KSrPO ₄: Tb, Na ₂Gd ₂B ₂O ₇: Ce, green fluorescence powder and the Y of Tb ₂O ₃: Eu, YVO ₄: Eu, CaSiAlN ₃: Eu, (Sr, Ca) SiAlN ₃: Eu, Sr ₂Si ₅N ₈: Eu, CaSiN ₂: Eu, (Y, Gd) BO ₃: Eu, (La, Y) ₂O ₂S:Eu, La ₂TeO ₆: Eu, SrS:Eu, Gd ₂MoO ₆: Eu, Y ₂WO ₆: Eu, Bi, Lu ₂WO ₆: Eu, Bi, (Ca, Sr, Ba) MgSi ₂O ₆: Eu, Mn, Sr ₃SiO ₅: Eu, SrY ₂S ₄: Eu, CaSiO ₃: Eu, Ca ₈MgLa (PO ₄) ₇: Eu, Ca ₈MgGd (PO ₄) ₇: Eu, Ca ₈MgY (PO ₄) ₇: Eu, CaLa ₂S ₄: the red fluorescence powder of Ce consists of at least a material in group.

16. the light-emitting component of dominant wavelength distribution convergent as claimed in claim 15, wherein the color temperature distribution of the 4th light beam is less than 2000K.

17. the light-emitting component of dominant wavelength distribution convergent as claimed in claim 10 also comprises a plurality of electric connection structures, is electrically connected these a plurality of electrodes and makes these a plurality of luminous laminations form series circuit.

18. the light-emitting component of dominant wavelength distribution convergent as claimed in claim 17, wherein this electric connection structure comprises the insulating barrier that is positioned between this luminous lamination, and the metal level that is connected with these a plurality of electrodes, is positioned on this insulating barrier.